半导体与先进封装 · 全部实体（第 78 / 100 页）

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• Stable single mode terahertz semiconductor sources at room temperature
  crossref M. Razeghi 2012-01-30T21:47:17Z 置信度 0.70
• Contacts to group III nitride semiconductor alloys
  crossref S.E. Mohney, B.A. Hull, J.H. Wang 2004-07-08T16:05:44Z 置信度 0.70
• Compound Semiconductor Device Processing
  crossref John M. Parsey 2008-06-04T17:09:26Z 置信度 0.70
• Semiconductor device simulation using filter bank transforms
  crossref M. Movahhedi, A.A. Abdipour 2006-04-28T07:05:46Z 置信度 0.70
• The Monte Carlo method for semiconductor device simulation
  crossref R.W. Kelsall 2005-11-17T19:57:28Z 置信度 0.70
• Semiconductor Device Physics
  crossref Joel Rosenbaum 2026-06-16T02:18:27Z 置信度 0.70
• Semiconductor band structure and heterostructures
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.70
• Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts
  crossref 2020-04-08T18:20:55Z 置信度 0.70
• Factors affecting semiconductor device thermal resistance measurements
  crossref B.S. Siegal 2003-01-06T14:05:09Z 置信度 0.70
• Semiconductor Device Physics
  crossref Joel Rosenbaum 2026-06-16T02:18:57Z 置信度 0.70
• ISDRS 2007 Committees
  crossref 2011-06-07T09:33:41Z 置信度 0.70
• ISDRS'05 Committees
  crossref 2011-06-07T14:28:28Z 置信度 0.70
• Carrier concentrations in semiconductors
  crossref 2020-07-10T00:28:35Z 置信度 0.70
• 45th International Semiconductor Conference
  crossref 2022-05-24T19:43:27Z 置信度 0.70
• Preface
  crossref Sandip Tiwari 2013-11-18T16:34:56Z 置信度 0.70
• Laser Assisted Semiconductor Device Processing
  crossref Robert S. White 2017-09-18T22:01:10Z 置信度 0.70
• SEMICONDUCTOR DEVICE CONCEPTS
  crossref GENERAL ELECTRIC CO SYRACUSE NY 2017-09-29T11:59:45Z 置信度 0.70
• Device Applications of Solution Processed MIR Semiconductor Nanocrystal Thin Films
  <p>Colloidal semiconductor nanocrystals (NCs) with bandgaps less than 1 eV allow the development of mid wave infrared (MIR) sensitive detectors that exploit the benefits of colloidal materials, primarily bandgap selection and solution deposition. Additio…
  crossref Matt Cryer 2021-12-07T14:57:55Z 置信度 0.70
• Semiconductor Interface Specialists Conference
  crossref 2013-05-20T18:43:31Z 置信度 0.70
• Technical session schedule
  crossref 2011-02-04T20:00:50Z 置信度 0.70
• Semiconductor Device Physics
  crossref 2018-12-14T01:02:20Z 置信度 0.70
• Table of contents
  crossref 2011-06-07T09:33:41Z 置信度 0.70
• Technical sponsors
  crossref 2012-01-30T21:47:17Z 置信度 0.70
• Essential Semiconductor Laser Device Physics
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.70
• Semiconductor Device Reliability
  crossref 2012-07-29T00:04:34Z 置信度 0.70
• Specification for Semiconductor Device Passivation Opening Layouts
  crossref 2008-08-27T13:33:34Z 置信度 0.70
• Technical program
  crossref 2012-01-30T16:47:17Z 置信度 0.70
• MOS Device Characterization
  crossref 2021-03-06T01:30:57Z 置信度 0.70
• Metal—Semiconductor Field-Effect Transistors
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.70
• Semiconductor Macroatoms - Basics Physics and Quantum-Device Applications
  crossref 2010-03-04T02:32:36Z 置信度 0.70
• 4720671 Semiconductor device testing device
  crossref Tetsuo Tada, Keiichi Sawada 2003-03-15T06:01:23Z 置信度 0.70
• A Perturbation Approach for One Carrier Semiconductor device Equations
  crossref Chia-Hsiung Kao 2005-08-24T16:50:14Z 置信度 0.70
• Author index
  crossref 2012-01-30T21:47:17Z 置信度 0.70
• Technical session schedule
  crossref 2011-06-07T14:28:28Z 置信度 0.70
• Introduction
  crossref Sandip Tiwari 2013-11-18T16:34:58Z 置信度 0.70
• Model Properties Derived from Device Physics Theory
  crossref 2007-01-09T05:10:19Z 置信度 0.70
• 2004 IEEE Compound Semiconductor IC Symposium
  crossref 2004-03-30T13:46:05Z 置信度 0.70
• Characterization of electromigration in semiconductor device interconnects using microscopic techniques
  crossref Narahara Dingari 2025-03-04T19:41:13Z 置信度 0.70
• III–V Device
  crossref 2008-12-09T10:01:10Z 置信度 0.70
• SOLUTION OF THE SEMICONDUCTOR EQUATIONS CLOSED-FORM ANALYTICAL MODELS
  crossref 2012-11-20T03:30:31Z 置信度 0.70
• A semiconductor valid device development and production control methodology
  crossref S. Leibiger 2003-10-01T14:56:02Z 置信度 0.70
• Surface Processing in Semiconductor Device Technology
  crossref 2025-04-24T04:07:42Z 置信度 0.70
• 43rd International Semiconductor Conference
  crossref 2020-02-26T21:13:44Z 置信度 0.70
• Metal-Oxide-Semiconductor Field-Effect Transistors
  crossref Leonard MacEachern, Tajinder Manku 2018-12-16T04:37:31Z 置信度 0.70
• The semiconductor laser diode
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
  crossref Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim 等 2018-01-04T22:33:48Z 置信度 0.70
• NUMERICAL SOLUTION OF THE SEMICONDUCTOR EQUATION FINITE-ELEMENT METHODS
  crossref 2012-11-20T08:30:31Z 置信度 0.70
• Nonlinear boundary value problems with application to semiconductor device equations
  crossref Miroslav Pospíšek 2020-08-09T13:57:09Z 置信度 0.70
• Call for Papers Semiconductor Device Modeling for Circuit and System Design
  crossref 2022-11-03T22:40:46Z 置信度 0.70
• Novel semiconductor device approach for finding acceptable solutions to classes of graph-based computing problems not otherwise possible
  crossref N. DeClaris, A.A. Iliadis, A. Lacaze 2002-11-13T18:37:42Z 置信度 0.70
• IEEE Transactions on Semiconductor Manufacturing CALL FOR PAPERS for Special Issue on Process-Level Machine Learning Applications in Semiconductor Manufacturing
  crossref 2021-05-21T15:48:50Z 置信度 0.70
• IEEE Transactions on Semiconductor Manufacturing CALL FOR PAPERS for Special Issue on Process-Level Machine Learning Applications in Semiconductor Manufacturing
  crossref 2021-06-29T19:44:01Z 置信度 0.70
• Compound Semiconductor Device Processing
  crossref John M. Parsey 2008-05-28T08:47:55Z 置信度 0.70
• Device Applications of Novel 2D Materials
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Smart-power device model coupling compact, distributed and logic level description
  crossref Alberto Castellazzi, Mauro Ciappa 2008-01-12T01:07:19Z 置信度 0.70
• DANCIR (Device and Circuit Simulator): A three-dimensional steady-state semiconductor device simulator
  crossref J. C. Meza, J. F. Grcar 2020-07-03T03:23:48Z 置信度 0.70
• Semiconductor band structure and heterostructures
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• 2017 IEEE Compound Semiconductor Symposium
  crossref 2017-01-25T19:18:35Z 置信度 0.70
• Applications of Semiconductor Ultraviolet Optical Sources and Detectors to Bioagent Detection and Sterilization
  crossref M. Wraback 2006-03-10T16:50:57Z 置信度 0.70
• Preliminary study of As-for-Sb exchange for device applications
  crossref T. Sarmiento, G.S. May 2004-07-08T20:05:44Z 置信度 0.70
• Metal—Oxide Semiconductor Field-Effect Transistors
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.70
• Metal-Oxide-Semiconductor Field-Effect Transistors
  crossref Leonard MacEachern, Tajinder Manku 2010-02-23T15:02:18Z 置信度 0.70
• 2017 IEEE Compound Semiconductor Symposium
  crossref 2017-02-27T20:22:16Z 置信度 0.70
• III-nitride LED material characterization and device fabrication
  crossref E. Stokes 2002-11-13T23:37:42Z 置信度 0.70
• LED, photodetectors and solar-cell
  crossref 2020-07-10T00:28:35Z 置信度 0.70
• Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device
  europepmc 2022 置信度 0.80
• Electrode Engineering for Advanced Organic Semiconductor Devices.
  europepmc 2026 置信度 0.80
• Multifunctional Device Design and Applications of GaN and Transition Metal Dichalcogenides Heterojunctions.
  europepmc 2026 置信度 0.80
• Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing.
  europepmc 2026 置信度 0.80
• Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors.
  europepmc 2026 置信度 0.80
• Acoustoelectrically Driven Ferroelectric Transistors Enabling Interactive and Adaptive Neuromorphic Computation.
  europepmc 2026 置信度 0.80
• High-Performance Self-Powered Gr/MoS2/WSe2 Heterojunction Photodetector Based on Asymmetric Van Der Waals Contacts.
  europepmc 2026 置信度 0.80
• Electroforming-Free, Self-Rectifying Selector-Only Memory With Diffusive Cu-Ion Dynamics for Logic-In-Memory Computing.
  europepmc 2026 置信度 0.80
• PVA-Mediated Transfer of MoS2 and Au Electrodes: A Lithography-Free Route to Ultraclean van der Waals Interfaces for High-Performance Electronics and Optoelectronics.
  europepmc 2026 置信度 0.80
• Analysis and Applications of Neuromorphic Memristors in Artificial Intelligence Computing.
  Artificial intelligence (AI) has advanced rapidly in recent years and has been widely applied in healthcare, intelligent sensing, machine perception, and image recognition. Neuromorphic computing, inspired by the structure and operating principles of the human…
  europepmc 2026 置信度 0.80
• Impact of 2D <i>h</i>-BN Interlayer on Leakage Mechanisms and Device Performance Optimization in High-Reliability <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> MIS Devices.
  europepmc 2026 置信度 0.80
• Organic semiconductor materials for neuromorphic and bioelectronic systems design rules and applications.
  europepmc 2026 置信度 0.80
• Advances in colloidal anisotropic nanocrystals for high-efficiency light-emitting diodes.
  europepmc 2026 置信度 0.80
• Intercalation-induced ohmic contact and exceptionally low contact resistance in blue phosphorene heterojunctions.
  europepmc 2026 置信度 0.80
• Effects of Ga and Si Incorporation on Oxygen-Related Defects and Bias-Temperature Stability of ZnSnO Thin-Film Transistors.
  europepmc 2026 置信度 0.80
• Manipulation of Photoresponse via Defect-Level Excitations in Metal-Insulator-Semiconductor-Type Two-Dimensional Heterostructure for Optoelectronic Logic Gates.
  In recent years, effective carrier-exciton conversion and defect engineering in tunneling diodes based on metal-insulator-semiconductor (MIS) van der Waals heterostructures have attracted extensive research interest in modulating optoelectronic device performa…
  pubmed Zhou J, Tian R, Tao Y, Ni K 等 2026 置信度 0.82
• Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications.
  Scandium-doped aluminum nitride (ScAlN) has emerged as a wide-bandgap ferroelectric material with exceptional potential for next-generation electronic devices due to its tunable polar properties, high breakdown field, and strong spontaneous polarization. Compa…
  pubmed Zhang J, Dai Y, Zhou L, Lu Q 等 2026 置信度 0.82
• Tunable Fermi Level Alignment in TMD Contacts via Semimetallic Bi-Sb Alloys.
  europepmc 2026 置信度 0.80
• Photosensitive Polyimides as Enabling Materials for Advanced Semiconductor Packaging.
  Advanced packaging technologies have enabled electronic devices toward miniaturization, higher integration densities, and scalable optoelectronic applications. Among the key materials for low-dielectric redistribution layers, photosensitive polyimides (PSPIs) …
  pubmed Hsu C, Pang C, Lu Q, Kim S 2026 置信度 0.82
• Low-kV EDX Surface Analysis Can Replicate Metal Oxidation Trends of XPS for Semiconductor Package Assembly.
  europepmc 2026 置信度 0.80
• Dispersion compensation of four-channel high-speed IMDD data using slow-light in a silicon nitride chip.
  europepmc 2026 置信度 0.80
• Investigation of Structural and Optical Properties of Zinc Ferrite Nanoparticles for Photodetector Devices
  europepmc 2026 置信度 0.80
• From Device-Level Implementation to In-Sensor Computing in Memristive-Device-Based Biosensors: A Review.
  europepmc 2026 置信度 0.80
• Analytical Modeling on Investigating the Electric Field Shift Behavior of GaN Vertical FinFETs.
  europepmc 2026 置信度 0.80
• Schottky Barrier as Photodetector Based on Nanostructured Cd <sub><i>x</i></sub> Zn<sub>1-<i>x</i></sub> S along with Switchable Photocurrent Generation.
  europepmc 2026 置信度 0.80
• Metal electrodes transfer using polycarbonate for the fabrication of molybdenum disulfide semiconductor devices.
  europepmc 2026 置信度 0.80
• Wafer-scale SOT-MRAM for analog crossbar array applications.
  europepmc 2026 置信度 0.80
• Attention-driven simultaneous extraction of semiconductor multilayer parameters via terahertz spectroscopy.
  europepmc 2026 置信度 0.80
• 2007 International Semiconductor Device Research Symposium
  crossref 2020-02-05T00:04:02Z 置信度 0.70
• Semiconductor–Semiconductor Heterojunction Cells
  crossref Stephen J. Fonash 2014-01-17T22:20:08Z 置信度 0.70
• Specification for Semiconductor Device Passivation Opening Layouts
  crossref 2008-08-28T22:08:31Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2013-11-13T21:57:54Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-10T12:47:23Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2013-12-10T16:17:43Z 置信度 0.70