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• Semiconductor Devices
  crossref Amal Banerjee 2025-11-20T07:43:03Z 置信度 0.70
• Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing
  ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data‐transfer bottlenecks of conventional von Neumann architectures by emulating the parallel and adaptive information processing of biological neural s…
  crossref Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang 等 2026-05-23T17:51:31Z 置信度 0.70
• Decision letter for "A Zero-Dimensional Cadmium-Based Hybrid Phase Transition Material with Switchable Dielectric Response and Wide Bandgap"
  crossref 2026-07-27T21:34:41Z 置信度 0.70
• Decision letter for "A Zero-Dimensional Cadmium-Based Hybrid Phase Transition Material with Switchable Dielectric Response and Wide Bandgap"
  crossref 2026-07-27T21:34:41Z 置信度 0.70
• Novel surface passivation for wide-bandgap perovskites
  crossref Charlie Nicholls, James Pidgeon, Alexandra Ramadan, Robert Oliver 2026-04-16T08:04:37Z 置信度 0.70
• Wide Bandgap Semiconductors in Electric Vehicles: Recent Advances and Outlook
  Wide bandgap (WBG) (such as silicon carbide (SiC) and gallium nitride (GaN)) power devices are now typical choices for traction inverters, on-board chargers, and DC–DC converters in modern electric vehicles. They enable higher switching speeds, lower losses, a…
  crossref Xiangfan Fu 2026-08-14T03:31:53Z 置信度 0.70
• Noise in Semiconductor Devices
  crossref Amal Banerjee 2025-11-20T07:43:17Z 置信度 0.70
• Decision letter for "Point-to-Volume Engineering Enables Enhanced Birefringence and Wide Bandgap in Hybrid Halide Ultraviolet Nonlinear Optical Crystals"
  crossref 2026-04-16T21:11:24Z 置信度 0.70
• Probe Card Technologies in Advanced Semiconductor Testing for Wide Band Gap Devices
  The rapid adoption of Wide Band Gap (WBG) and Ultra-Wide Band Gap (UWBG) semiconductor technologies, most notably Silicon Carbide (SiC) and Gallium Nitride (GaN), is reshaping wafer-level electrical testing beyond conventional silicon-based probing infrastruct…
  crossref Elena Venuti 2026-05-06T00:10:14Z 置信度 0.70
• Decision letter for "Room Temperature Buried Molecular Engineering Boosts the Photovoltaic Performance of Wide-Bandgap and All-Perovskite Tandems"
  crossref 2026-04-16T17:56:51Z 置信度 0.70
• MXene/p-GaN interface: atomic insights into contact engineering for wide-bandgap electronics
  This study proposes the use of X-ray photoelectron spectroscopy (XPS) and synchrotron-based technique X-ray absorption spectroscopy (XAS) techniques to investigate the atomic and electronic structure of MXene/p-GaN heterostructures. The surface of epitaxial p-…
  crossref Kamila Kinga Nowak, Dominika Majchrzak, D. Hommel, Edyta Piskorska-Hommel 2026-04-03T14:36:46Z 置信度 0.70
• Decision letter for "Point-to-Volume Engineering Enables Enhanced Birefringence and Wide Bandgap in Hybrid Halide Ultraviolet Nonlinear Optical Crystals"
  crossref 2026-04-16T21:11:24Z 置信度 0.70
• Overcoming the surface paradox: Buried perovskite quantum dots in wide-bandgap perovskite thin films
  crossref Aditya Mohite 2025-12-18T10:52:24Z 置信度 0.70
• SSLCHINA: IFWS 2025 Copyright Page
  crossref 2025-12-31T18:42:09Z 置信度 0.70
• A Method to Decrease the Submodule Capacitor Voltage Fluctuations in Voltage-Source Modular Multilevel Converter with Wide-Bandgap Power Devices
  crossref Qian Kang, Tiancong Shao, Trillion Zheng, Yuqing Geng 等 2025-10-07T17:34:49Z 置信度 0.70
• Bandgap in intrinsic graphene for semiconductor applications
  crossref Yiwei Huang 2025-01-09T05:25:16Z 置信度 0.70
• SSLCHINA: IFWS 2025 Cover Page
  crossref 2025-12-31T18:42:09Z 置信度 0.70
• Diamond and III-nitride wide-bandgap semiconductors: a research journey
  crossref Yasuo Koide 2025-09-06T03:44:06Z 置信度 0.70
• Gallium Oxide Solar-Blind Deep-Ultraviolet Detectors
  crossref Weihua Tang, Zeng Liu 2026-01-01T23:47:56Z 置信度 0.70
• High Efficiency and Wide Voltage Range Buck-Boost Converter with Wide Bandgap Devices
  crossref Wing-Kong Ng, Said F. Al-Sarawi, Nelson Tansu, Nesimi Ertugrul 2025-11-11T18:26:10Z 置信度 0.70
• A TID-Hardened CMOS Bandgap Reference Circuit Design
  crossref Wei Liu, Ruixiang Ma, Weihong Liu 2025-10-09T17:50:46Z 置信度 0.70
• Corrigendum to “Bandgap energy prediction of senary zincblende III-V semiconductor compounds using machine learning” [Mater. Sci. Semicond. Process. 161 (2023) 107461]
  crossref Mohammed Alsalman, Saad M. Alqahtani, Fahhad H. Alharbi 2024-11-30T07:22:23Z 置信度 0.70
• WiPDA-Asia 2025 Breaker Page
  crossref 2025-10-07T17:34:49Z 置信度 0.70
• Advancing the reliability of wide bandgap semiconductors through in-situ transmission electron microscopy
  A systematic review of in-situ TEM of of wide bandgap semiconductor materials and devices offers guidance that could reduce failure rates in the future, strengthening applications in power electronics, new energy, and other fields.
  crossref Ryan Nelson 2025-03-04T13:45:07Z 置信度 0.70
• Wide bandgap Materials: Revitalizing Power Electronics with Advances in Power Semiconductor Devices
  crossref Satish Kumar Sahu, Saji T. Chacko, Onika Parmar, Amit Singh Rajput 2025-02-28T06:51:04Z 置信度 0.70
• Exploring the Soft-Switching Benefits of TZCM Mode in Three-Level DC-DC Converters Using Wide Bandgap Power Devices
  crossref Zhigang Yao, Jingrui Liu, Sankun Yao, Bac-Bien Ngo 等 2025-10-07T17:34:49Z 置信度 0.70
• WiPDA-Asia 2025 List Reviewer Page
  crossref 2025-10-07T17:34:49Z 置信度 0.70
• WiPDA-Asia 2025 List Reviewer Page
  crossref 2025-10-07T17:34:49Z 置信度 0.70
• 2025 22nd China International Forum on Solid State Lighting & 2025 11th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
  crossref 2025-12-31T18:42:42Z 置信度 0.70
• Wide bandgap Antimony Chalcogenide Solar Cells
  crossref Chen Qian, Kaiwen Sun, Jialiang Huang, Xiaojing Hao 2025-12-17T09:40:46Z 置信度 0.70
• At high temperatures, wide-bandgap solar cells perform better than low-bandgap counterparts
  Abstract Shockley–Queisser (SQ limit) has established that a bandgap of 1.4 eV is optimal for maximum photovoltaic efficiency at room temperature. Here, we performed a theoretical analysis of bandgap dependents performance under thermal stress by varying tempe…
  crossref M Benisha, M Ranjith Kumar, R Thandaiah Prabu, Atul Kumar 2025-07-02T18:54:51Z 置信度 0.70
• Advances in wide-bandgap III-V solar cells
  III-V multi-junction solar cells have yielded the highest solar cell efficiencies for nearly three decades and recently achieved record efficiencies approaching 40% under standard conditions and 50% under concentrated sunlight. Such high efficiencies are curre…
  crossref Stephanie Tomasulo, Minjoo Larry Lee 2025-07-17T12:32:54Z 置信度 0.70
• Growth and Application of AlN Single Crystal
  crossref Ke Xu, Jun Huang 2025-03-20T15:38:08Z 置信度 0.70
• Decision letter for "Advancing 1.84 eV Wide-Bandgap Perovskite Solar Cells via Multidentate Molecular Engineering"
  crossref 2026-01-16T21:10:23Z 置信度 0.70
• Review for "Towards a Wide Bandgap Absorber: Structural, Morphological, and Optical Investigation of Ag-Alloyed Cu2ZnSnS4 Thin Films"
  crossref 2025-10-23T21:07:14Z 置信度 0.70
• <i>(Invited)</i> Band Offset and Defect Properties of Ultra-Wide Bandgap Semiconductor Ga ₂ O ₃ and Its Alloys: From First Principles to Device Modelling
  The electronic properties of ultra-wide band gap semiconductors, notably β-Ga 2 O 3 , have been intensively investigated for applications such as high-power electronics [1] and solar-blind photodetectors. Until recently, atomistic modelling has been mostly foc…
  crossref Mohamed Abdelilah Fadla, Myrta Grüning, Lorenzo Stella 2025-11-24T08:09:35Z 置信度 0.70
• First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs₃AlI_xBr_6-x for optoelectronic applications
  Abstract This study aims at exploring the potential of inorganic wide-bandgap mixed-halide aluminum-containing perovskites of Cs 3 AlI x Br 6− x for solar harvesting, by investigating their structural, electronic and optical properties through density function…
  crossref Hussain Ahmed, Surayya Mukhtar, Simeon Agathopoulos 2025-01-14T08:56:35Z 置信度 0.70
• An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications
  crossref Reshma Ravindran, Ahmed M. Massoud 2025-04-11T10:49:24Z 置信度 0.70
• First Principles Investigation of Zb-Tisn: A Promising Narrow Bandgap Semiconductor
  crossref Sudeep R, Sarojini M, Uma Mahendra Kumar Koppolu 2025-04-23T17:40:08Z 置信度 0.70
• Application of DP-MD methodology in ion implantation for wide bandgap power semiconductor materials
  crossref Jiashu Chen, Junhua Li, Xinyu Xiao, Haoyu Qiao 等 2025-03-09T12:25:25Z 置信度 0.70
• Influences of Stator Conductor Spatial Positions on Transient Potential Distributions in Electric Machines fed from Wide-Bandgap Inverters
  This thesis presents a novel method to addressing the challenges arising from steep-fronted voltage impulses on the dielectric strength of insulation systems in stator windings, with a focus on the spatial arrangement of conductors in the stator slots. The mot…
  crossref Ting Helmholdt-Zhu 2026-02-20T10:22:23Z 置信度 0.70
• Near-field electroluminescent cooling with wide-bandgap semiconductors
  Electroluminescent cooling involves a forward-biased light-emitting diode with electroluminescence exceeding the input electricity, leading to refrigeration of the diode. Achieving electroluminescent cooling with significant cooling power requires near-unity l…
  crossref Abhimanyu Sharan, Linxiao Zhu 2025-08-22T10:30:51Z 置信度 0.70
• Decision letter for "Photostable wide-bandgap perovskites with enhanced interface coupling for all-perovskite tandems"
  crossref 2026-01-08T21:08:48Z 置信度 0.70
• GaN Single Crystal Growth and Application
  crossref Ke Xu, Jianfeng Wang, Guoqiang Ren, Zongliang Liu 2025-10-01T00:59:29Z 置信度 0.70
• Wide Bandgap Power Electronics
  crossref 2025-08-26T12:24:53Z 置信度 0.70
• Temperature-Adaptive Wide Bandgap-Based Domestic Induction Heater for Cooking Applications
  crossref Tumpa Das, Molay Roy 2026-03-27T19:48:15Z 置信度 0.70
• Ultrafast Electric Vehicle Charger
  crossref Nathan D. Weise, Waqar A. Khan 2025-08-26T12:24:53Z 置信度 0.70
• Single DC Source–Based Cascaded Multilevel Inverter
  crossref Jih-Sheng Lai 2025-08-26T12:24:53Z 置信度 0.70
• Reconfigurable metasurface in the visible spectrum using wide bandgap phase change material antimony sulfide (Sb2S3)
  We experimentally demonstrate an electrically tunable metasurface using Sb 2 S 3 in the visible spectrum. We observe a resonance shift of ~16 nm using just 20 nm thick layer of Sb2S3 at a wavelength of ~675 nm.
  crossref Virat Tara, Rui Chen, Arka Majumdar 2025-09-24T20:07:50Z 置信度 0.70
• Impact of Nitrogen Polymerization on the Properties of MgN₂ Polymorphs: Ultrasoft Semiconductor versus Hard Wide-Bandgap Semiconductor
  crossref Junzhao Li, Huafeng Dong, Le Huang, Hui Long 等 2025-02-17T12:10:11Z 置信度 0.70
• High‐Performance Ultra‐Wide‐Bandgap CaSnO ₃ Metal‐Oxide‐Semiconductor Field‐Effect Transistors
  Abstract The increasing demand for high‐voltage and high‐power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room‐temperature electro…
  crossref Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee 等 2025-10-16T07:14:41Z 置信度 0.70
• Stress-induced bandgap modulation in semiconductor quantum wells
  Strained semiconductor quantum wells have been an active area of research for more than three decades. However, a major part of the reported literature has shown a core focus on the theoretical and experimental investigations of their energy band structures un…
  crossref Saurabh Singh, Fuqian Yang 2026-02-19T12:50:21Z 置信度 0.70
• Laser Damage of a Lamellar Small Bandgap Semiconductor in Ultra High Vacuum
  Bulk Bi 2 Te 3 was irradiated with 68° angle of incidence, single shot 250fs 1030nm s-polarized laser pulses in an STM in UHV near damage threshold.
  crossref Liam Clink, Duy Nguyen, Jay Gupta, Enam Chowdhury 2026-07-15T11:05:55Z 置信度 0.70
• Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure.
  In this work, we propose a novel structure for nonpolar (10-10)-plane InGaN-based light-emitting diode (LED) using a lateral p-type Al 0.2 Ga 0. 8 N/GaN superlattice structure as the hole injection layer. The main objective is to increase the hole concentratio…
  pubmed Tao H, Xu S, Zhang Y, Su H 等 2026 Jan 置信度 0.82
• Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.
  This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction w…
  pubmed Han Z, Li X, Wang H, Liu Y 等 2024 Jan 20 置信度 0.82
• Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam.
  With the progress of wide bandgap semiconductors, compact solid-state light-emitting devices for the ultraviolet wavelength region are of considerable technological interest as alternatives to conventional ultraviolet lamps in recent years. Here, the potential…
  pubmed Yu Y, Han D, Wei H, Tang Z 等 2023 Mar 16 置信度 0.82
• Smoothing out the surfaces of wide-bandgap perovskite solar cells
  Addition of passivation agent may help spawn a new generation of PV batteries
  crossref Ben Ikenson 2026-02-12T14:10:21Z 置信度 0.70
• DFT study of strain-induced optical shift in graphone, a 2D wide-bandgap semiconductor: Perspectives for photovoltaic and optoelectronic applications
  crossref B. Moustahssine, R. Masrour 2025-10-09T13:52:54Z 置信度 0.70
• Universal dimensionless scaling of charge neutrality: From ultra-wide bandgap to cryogenic semiconductors
  The accurate prediction of free-carrier concentration under incomplete dopant ionization is a critical bottleneck in the design of next-generation ultra-wide bandgap (UWBG) power devices and deep-cryogenic microelectronics. Although the fundamental assumption …
  crossref Gonzalo Alba 2026-04-16T03:45:08Z 置信度 0.70
• Designing ultra-wide bandgap semiconductor GeSb2O5 alloy films for high-performance solar-blind photodetectors
  The ultra-wide bandgap semiconductor GeO2, due to its excellent solar-blind ultraviolet photoresponse characteristics, has been regarded as a highly promising candidate for constructing solar-blind photodetectors (SBPDs). However, the high interfacial...
  crossref Shuxian Zang, Xingyu Liu, Yang Chen, Ziyu Li 等 2026-08-19T19:43:27Z 置信度 0.70
• Fe2SnO4 Inverse Spinel Ceramics: Wide-Bandgap Semiconductor with Tunable Small-Polaron Transport for NTC and Optoelectronic Applications
  crossref Mnakri Minyar, Saber Nasri, Nazir Mustapha, Mokhtar Hjiri 等 2026-08-13T18:07:31Z 置信度 0.70
• Compositionally tunable (AlxGa1-x)2O3 ultra-wide-bandgap multilayers
  crossref Yu-Che Ho, Caroline Ormond, Shahriar Mostufa, Matthew Gaddy 等 2026-04-20T16:18:20Z 置信度 0.70
• A Standardized Reliability Database of Lifetime Models for Wide-Bandgap Power Semiconductor Devices and Packaging: A Comprehensive Survey
  crossref Ahmed Siraj, Purushottam Khadka, Dilip Rana, Annoy Kumar Das 等 2026-08-28T19:08:37Z 置信度 0.70
• Ultra-Wide Bandgap Semiconductor Direct Wafer Bonding: AlN/Diamond and Ga ₂ O ₃ /SiC
  Ultra-wide bandgap (UWBG) semiconductors present unique opportunities for the advancement of power devices and optoelectronics due characteristics like higher critical fields or higher carrier mobilities as compared to conventional silicon. However, these mate…
  crossref Katharina V. Loske, Zachary W. Hargus, Lydia G. Hatfield, Marko J. Tadjer 等 2026-07-16T07:37:44Z 置信度 0.70
• Review for "Room Temperature Buried Molecular Engineering Boosts the Photovoltaic Performance of Wide-Bandgap and All-Perovskite Tandems"
  crossref 2026-04-16T17:56:51Z 置信度 0.70
• Decision letter for "Advancing 1.84 eV Wide-Bandgap Perovskite Solar Cells via Multidentate Molecular Engineering"
  crossref 2026-01-16T21:10:23Z 置信度 0.70
• Shedding Light on Wide Bandgap Perovskites
  crossref Michael Saliba 2026-06-12T10:08:50Z 置信度 0.70
• Designing and synthesis of perovskite nanocrystals: a promising wide-spectrum solar light-responsive photocatalyst and lead ion sensor.
  Perovskites are an emerging material with a variety of applications, ranging from their solar light conversion capability to their sensing efficiency. In current study, perovskite nanocrystals (PNCs) were designed using theoretical density functional theory (D…
  pubmed Ali N, Ahmad S, Nawaz A, Khan M 等 2025 Jun 置信度 0.82
• Advances in Defect Engineering of Metal Oxides for Photocatalytic CO(2) Reduction.
  Photocatalytic CO 2 reduction technology, capable of converting low-density solar energy into high-density chemical energy, stands as a promising approach to alleviate the energy crisis and achieve carbon neutrality. Semiconductor metal oxides, characterized b…
  pubmed Zhong K, Sun P, Xu H 2025 Jul 置信度 0.82
• Reconciliation of Differences in Apparent Diffusion Coefficients Measured for Self-Exchange Electron Transfer between Molecules Anchored to Mesoporous Titanium Dioxide Thin Films.
  Redox-active sites present at large concentrations as part of a solid support or dissolved as molecules in fluid solutions undergo reversible self-exchange electron-transfer reactions. These processes can be monitored using a variety of techniques. Chronoamper…
  pubmed Cardon JM, Krueper G, Kautz R, Fabian DM 等 2021 Sep 8 置信度 0.82
• Wide-Bandgap Device Application: Devices, Circuits, and Drivers
  crossref 2025-02-17T11:16:06Z 置信度 0.70
• 2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
  crossref 2025-12-29T18:37:28Z 置信度 0.70
• 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
  crossref 2025-10-07T17:36:50Z 置信度 0.70
• Regulation of electromagnetic wave absorption properties for Co3Fe7 through wide bandgap semiconductor coating
  crossref Lai Wei, Yiming Zhao, Suli Xing, Jianwei Zhang 等 2024-11-26T17:57:51Z 置信度 0.70
• Quasi van der Waals Epitaxy of Nitride Films on Single Crystal Substrates
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:32:56Z 置信度 0.70
• Emerging thermal metrology for ultra-wide bandgap semiconductor devices
  Ultrawide bandgap (UWBG) semiconductor materials, such as β−Ga2O3 (gallium oxide), AlN (aluminum nitride), AlxGa1−xN (AlGaN), and diamond, have emerged as essential candidates for components in high-power, high-frequency applications due to their superior elec…
  crossref D. Myren, F. Vásquez-Aza, J. S. Lundh, M. J. Tadjer 等 2025-05-20T08:52:46Z 置信度 0.70
• Optimization of Electric Field Distribution in Wide-Bandgap Semiconductor Power Modules via cBN-PI Composite Coating
  crossref Lantian Bi, Hong Zhang, Ying Han, Tianshu Yuan 等 2025-12-03T18:38:34Z 置信度 0.70
• Nitride Quasi van der Waals Epitaxy Bonding and Nucleation on 2D Materials
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:32:59Z 置信度 0.70
• WiPDA 2025 Committees
  crossref 2025-12-29T18:36:20Z 置信度 0.70
• Application of Wide Bandgap High Frequency Inverter in 10 kW Magnetic Field-Coupled Undersea Wireless Power Transfer Systems
  crossref Lei Yang, Jiahua Sun, Yuanfeng Wang 2025-10-07T17:34:49Z 置信度 0.70
• WiPDA 2025 Author Index
  crossref 2025-12-29T18:36:20Z 置信度 0.70
• Two-Dimensional Materials and the Principles and Applications of Quasi van der Waals Epitaxy
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:32:58Z 置信度 0.70
• Theoretical Calculations of Quasi van der Waals Epitaxial Interfaces in Two-Dimensional Material-Based Nitrides
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:33:04Z 置信度 0.70
• WiPDA 2025 Index Page
  crossref 2025-12-29T18:36:20Z 置信度 0.70
• Optical Characterization of Microstructures and Optoelectronic Devices Based on Wide Band Gap Semiconductors
  crossref 2026-01-01T23:27:37Z 置信度 0.70
• Research on Defect Control Technology of Wide Bandgap Semiconductor Substrates Centered on SiC
  crossref Zejing Liu, Bingran Qiu 2026-02-17T10:51:20Z 置信度 0.70
• Impact of Al Doping on the Structural and Electrochemical Properties of SnO ₂ Wide Bandgap Semiconductor Nanoparticles
  Abstract The present communication showcases the synthesis, characterization, and utilization of pure and aluminum‐doped tin oxide nanoparticles (Al‐SnO 2 ) in supercapacitor applications. The electrochemical performance of the synthesized electrodes was asses…
  crossref Ummer Altaf, Aman Kumar, Malik Aalim, Reyaz Ahmad 等 2025-10-21T18:28:30Z 置信度 0.70
• WiPDA-Asia 2025 Committees
  crossref 2025-10-07T17:34:49Z 置信度 0.70
• WiPDA-Asia 2025 Index
  crossref 2025-10-07T17:34:49Z 置信度 0.70
• Bio-Inspired Full-Spectrum Bidirectional Optoelectronic Synaptic Transistor for In-Sensor Neuromorphic Vision.
  europepmc 2026 置信度 0.80
• Epitaxial β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/GaN Heterojunction Based UV-C/UV-A Photodetectors with Superior Responsivity and Stability Under Vertical and Lateral Mode Operations.
  europepmc 2026 置信度 0.80
• Light-responsive Au/TiO&lt;sub&gt;2&lt;/sub&gt;/PDA coating enhances the antibacterial performance of titanium implants.
  europepmc 2026 置信度 0.80
• Chemical Etching of Nanoporous Al Foil for Enhancing the Stability of LiFeMnPO&lt;sub&gt;4&lt;/sub&gt; Cathodes.
  europepmc 2026 置信度 0.80
• Realization of high-performance solar-blind UV detector via a ZrO&lt;sub&gt;2&lt;/sub&gt;/Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/LaO&lt;sub&gt;&lt;i&gt;x&lt;/i&gt;&lt;/sub&gt; p-i-n heterostructure.
  europepmc 2026 置信度 0.80
• Cerium-modified niobium oxide/reduced graphene oxide (Ce-Nb&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;/r-GO) hybrid: advances in charge transport dynamics for photocatalytic applications.
  europepmc 2026 置信度 0.80
• Chemical Control of Zero-Phonon Line Wavelength in Diamond Color Centers for Telecom-Band Emission.
  europepmc 2026 置信度 0.80
• Study on the structural, optical and magnetic properties of cobalt-doped CdSSe quantum dots.
  europepmc 2026 置信度 0.80
• Design of polar XC&lt;sub&gt;3&lt;/sub&gt; (X = P, As, Sb, Bi) monolayers with coupled bandgap, polarization, and optical responses.
  europepmc 2026 置信度 0.80
• Complementary Interface Optimization Enabled by Photochemical Passivation and van der Waals Contacts for High-Performance Ultraviolet Photodetectors.
  europepmc 2026 置信度 0.80
• FDTD-based design of high quality factor quantum dot photonic crystal nanolaser for next-generation nanotechnologies.
  europepmc 2026 置信度 0.80