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• Hybrid Inorganic-Organic Rotaxanes and Related Compounds.
  europepmc 2025 置信度 0.80
• A review of gallium phosphide nanophotonics towards omnipotent nonlinear devices.
  europepmc 2024 置信度 0.80
• State of the Art and Future Perspectives in Advanced CMOS Technology.
  europepmc 2020 置信度 0.80
• λ/30 inorganic features achieved by multi-photon 3D lithography.
  europepmc 2022 置信度 0.80
• Laboratory-based 3D X-ray standing-wave analysis of nanometre-scale gratings.
  europepmc 2024 置信度 0.80
• Red/NIR-Emissive, Cadmium-Free Quantum Dots: Synthesis, Luminescence Mechanisms, and Applications.
  europepmc 2026 置信度 0.80
• Verification of Laser Heterodyne Interferometric Bench for Chinese Spaceborne Gravitational Wave Detection Missions.
  europepmc 2024 置信度 0.80
• Easy-handling minimum mass laser target scaffold based on sub-millimeter air bubble -An example of laser plasma extreme ultraviolet generation.
  europepmc 2020 置信度 0.80
• Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration.
  europepmc 2023 置信度 0.80
• EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer.
  A detailed investigation to understand the mechanism of the resist action at a fundamental level is essential for future Extreme Ultraviolet Lithography (EUVL) resists. The photodynamics study of a newly developed hybrid nonchemically amplified 2.15%-MAPDSA-MA…
  pubmed Moura CADS, Belmonte GK, Reddy PG, Gonslaves KE 等 2018 置信度 0.82
• Role of Low-Energy (<20 eV) Secondary Electrons in the Extraterrestrial Synthesis of Prebiotic Molecules.
  europepmc 2024 置信度 0.80
• All-optical analog differential operation and information processing empowered by meta-devices.
  europepmc 2025 置信度 0.80
• Roll-to-plate 0.1-second shear-rolling process at elevated temperature for highly aligned nanopatterns.
  europepmc 2023 置信度 0.80
• Gaptronics: multilevel photonics applications spanning zero-nanometer limits.
  europepmc 2022 置信度 0.80
• Low-Energy Electron Irradiation Damage in Few-Monolayer Pentacene Films.
  europepmc 2021 置信度 0.80
• Formation of Li₂CO₃ Nanostructures for Lithium-Ion Battery Anode Application by Nanotransfer Printing.
  europepmc 2021 置信度 0.80
• Towards Understanding Excited-State Properties of Organic Molecules Using Time-Resolved Soft X-ray Absorption Spectroscopy.
  europepmc 2021 置信度 0.80
• Emerging Electrolyte-Gated Transistors: Materials, Configuration and External Field Regulation.
  europepmc 2025 置信度 0.80
• Silicon Nanowires for Gas Sensing: A Review.
  europepmc 2020 置信度 0.80
• Spectroscopic analysis of N-intrashell transitions in Rb-like to Ni-like Yb ions.
  europepmc 2020 置信度 0.80
• Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits.
  europepmc 2017 置信度 0.80
• Digital Electronic System-on-Chip Design: Methodologies, Tools, Evolution, and Trends.
  europepmc 2024 置信度 0.80
• The Influence of Additives on the Interfacial Width and Line Edge Roughness in Block Copolymer Lithography.
  europepmc 2020 置信度 0.80
• Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection.
  europepmc 2024 置信度 0.80
• Design and Numerical Analysis of an Infrared Cassegrain Telescope Based on Reflective Metasurfaces.
  europepmc 2021 置信度 0.80
• A Review of Reliability in Gate-All-Around Nanosheet Devices.
  The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in device architecture across the extensive 60-plus-year history of MOSFET. The int…
  europepmc Miaomiao Wang 2024 置信度 0.80
• A ReaxFF Molecular Dynamics Study of Hydrogen Diffusion in Ruthenium-The Role of Grain Boundaries.
  europepmc 2022 置信度 0.80
• Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors.
  europepmc 2024 置信度 0.80
• The anisotropy in the optical constants of quartz crystals for soft X-rays.
  europepmc 2021 置信度 0.80
• Information Requirements under the Essential-Use Concept: PFAS Case Studies.
  europepmc 2022 置信度 0.80
• Fabrication and Biomedical Applications of Heart-on-a-chip.
  europepmc 2021 置信度 0.80
• Patterned Plasmonic Surfaces-Theory, Fabrication, and Applications in Biosensing.
  europepmc 2017 置信度 0.80
• Comprehensive Review on the Impact of Chemical Composition, Plasma Treatment, and Vacuum Ultraviolet (VUV) Irradiation on the Electrical Properties of Organosilicate Films.
  europepmc 2024 置信度 0.80
• Dry resist patterning development towards high-NA EUV lithography
  crossref Indira Seshadri 2024-04-09T17:57:11Z 置信度 0.70
• Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law
  crossref Kurt Ronse 2024-03-27T18:51:22Z 置信度 0.70
• The challenges and limits to patterning using EUV lithography
  crossref Harry J. Levinson 2024-09-18T18:54:50Z 置信度 0.70
• Back Matter
  crossref 2009-12-04T17:05:29Z 置信度 0.70
• Front Matter
  crossref 2009-12-04T22:05:29Z 置信度 0.70
• EUV Lithography Costs
  crossref Harry J. Levinson 2025-12-02T16:36:08Z 置信度 0.70
• Extending EUV Lithography
  crossref Harry J. Levinson 2025-12-02T16:36:09Z 置信度 0.70
• Can we improve the energy efficiency of EUV lithography?
  crossref Tsumoru Shintake 2024-08-26T23:58:38Z 置信度 0.70
• Metrology for EUV Lithography
  crossref Harry J. Levinson 2025-12-02T16:36:10Z 置信度 0.70
• Diffraction efficiency measurements of two-window-transmission grating for EUV and beyond EUV interference lithography
  crossref Rikuya Imai, Shinji Yamakawa, Tetsuo Harada 2024-09-24T19:17:09Z 置信度 0.70
• Front Matter
  crossref 2018-02-09T01:06:20Z 置信度 0.70
• Front Matter
  crossref 2010-11-09T18:48:49Z 置信度 0.70
• Back Matter
  crossref 2010-11-09T23:48:49Z 置信度 0.70
• Back Matter
  crossref 2018-02-09T01:06:21Z 置信度 0.70
• Process Control for EUV Lithography
  crossref Harry J. Levinson 2025-12-02T16:36:09Z 置信度 0.70
• Actinic patterned mask inspection for high-NA EUV lithography
  crossref Ko Gondaira, Toshiyuki Todoroki, Masayasu Nishizawa, Hiroki Miyai 2024-04-09T17:22:59Z 置信度 0.70
• EUV lithography reaches 5 nm half-pitch
  crossref Iason Giannopoulos, Iacopo Mochi, Michaela Vockenhuber, Yasin Ekinci 等 2024-04-09T17:58:27Z 置信度 0.70
• Genetic optimization of aperiodic multilayer masks for high and hyper-NA EUV lithography
  crossref Ethan Maguire, Bruce Smith 2024-04-09T17:22:21Z 置信度 0.70
• Actinic blank inspection for high-NA EUV lithography
  crossref Ryo Watanabe, Tomoro Ide, Shohei Sakuma, Tomohiro Suzuki 2024-08-26T23:58:32Z 置信度 0.70
• Origin of Debris in EUV Sources and Its Mitigation
  crossref David Ruzic 2010-11-09T18:48:49Z 置信度 0.70
• Mask and Wafer Topography Effects in Lithography
  crossref Andreas Erdmann 2021-02-23T20:16:50Z 置信度 0.70
• Longer wavelength EUV lithography (LW-EUVL)
  crossref Christopher W. Maloney, Bruce W. Smith 2012-03-23T09:24:08Z 置信度 0.70
• EUV Resists
  crossref Harry J. Levinson 2020-11-09T23:59:52Z 置信度 0.70
• Detailed EUV Characterization of Laser-Plasma Sources for EUV Lithography*
  Emission characteristics for laser-driven EUV lithographic plasma sources have been studied exhaustively for the last four years. While debris issues now dominate research in this area, final details are being concluded on our understanding of material spectra…
  crossref Paul D. Rockett, John A. Hunter, Glenn D. Kubiak, Kevin Krenz 等 2023-02-15T15:37:46Z 置信度 0.70
• Electron-Based EUV Sources for At-Wavelength Metrology
  crossref André Egbert, Boris Chichkov 2010-11-09T23:48:49Z 置信度 0.70
• EUV Lithography: From the Very Beginning to the Eve of Manufacturing
  crossref Anthony Yen 2016-06-17T00:53:26Z 置信度 0.70
• Measuring and analyzing contact hole variations in EUV lithography
  crossref Joren Severi, Gian Lorusso, Danilo De Simone, Chris A. Mack 2021-02-19T22:14:44Z 置信度 0.70
• Novel high-contrast phase-shifting masks for EUV interference lithography
  crossref Bernhard Lüttgenau, Sascha Brose, Serhiy Danylyuk, Jochen Stollenwerk 等 2020-03-23T22:46:15Z 置信度 0.70
• EUV Exposure Systems
  crossref Harry J. Levinson 2020-11-09T23:59:53Z 置信度 0.70
• Patterning infrastructure development for advanced EUV lithography
  &lt;p&gt;This article describes all the steps that need to be taken to develop a high volume manufacturing process for advanced EUV scanners. It covers EUV masks, EUV pellicles, EUV wafer materials such as EUV resists, underlayers,... Also the metrology needs …
  crossref Kurt Ronse 2023-10-25T12:21:38Z 置信度 0.70
• Patterning infrastructure development for advanced EUV lithography
  This article describes all the steps that need to be taken to develop a high volume manufacturing process for advanced EUV scanners. It covers EUV masks, EUV pellicles, EUV wafer materials such as EUV resists, underlayers,… Also the metrology needs are covered…
  crossref Kurt Ronse 2023-10-25T08:21:35Z 置信度 0.70
• The role of the organic shell in hybrid molecular materials for EUV lithography
  crossref Lianjia Wu, Michaela Vockenhuber, Yasin Ekinci, Sonia Castellanos Ortega 2019-03-26T20:23:50Z 置信度 0.70
• EUV Lithography Cost of Ownership Analysis
  The cost of fabricating state-of-the-art integrated circuits (ICs) has been increasing and it will likely be economic rather than technical factors that ultimately limit the progress of ICs toward smaller devices. It is estimated that lithography currently acc…
  crossref Andrew M. Hawryluk, Natale M. Ceglio 2023-02-15T10:36:34Z 置信度 0.70
• High-Resolution EUV Imaging Tools for Resist Exposure and Aerial Image Monitoring
  crossref Malcolm Gower 2009-12-04T17:05:29Z 置信度 0.70
• Deposition of high-density carbon layer for beyond EUV lithography
  crossref Umi Fujimoto, Tetsuo Harada, Shinji Yamakawa, Takeo Watanabe 2024-08-26T23:58:28Z 置信度 0.70
• Enhancing the performance of LPP sources for EUV and BEUV lithography
  crossref Tatyana Sizyuk, Ahmed Hassanein 2014-04-17T16:38:15Z 置信度 0.70
• Mask 3D effects and compensation for high NA EUV lithography
  crossref Sudharshanan Raghunathan, Greg McIntyre, Germain Fenger, Obert Wood 2013-04-01T18:31:55Z 置信度 0.70
• Modeling and optimization of mass-limited targets for EUV lithography
  crossref T. Sizyuk, A. Hassanein 2012-03-23T09:24:08Z 置信度 0.70
• Evaluating vacuum components for particle performance for EUV lithography
  crossref Yashdeep Khopkar, Gregory Denbeaux, Vibhu Jindal 2014-04-17T16:38:15Z 置信度 0.70
• Front Matter: Volume 7636
  crossref 2010-04-21T18:08:58Z 置信度 0.70
• Four-Mirror Ring-Field System for EUV Projection Lithography
  A four-mirror 4x reduction ring-field system for EUV projection lithography at 13.0 nm wavelength is described.
  crossref Tanya E. Jewell 2023-02-15T10:37:07Z 置信度 0.70
• Critical Illumination Condenser for EUV Projection Lithography
  A condenser system couples a radiation source to an imaging system. We have designed a critical illumination condenser system which meets the technical challenges of extreme ultraviolet projection lithography based on a ring field imaging system and a laser pr…
  crossref Simon J. Cohen, Lynn G. Seppala 2023-02-15T15:36:40Z 置信度 0.70
• Investigation of mask absorber induced image shift in EUV lithography
  crossref Martin Burkhardt, Anuja de Silva, Jennifer Church, Luciana Meli 等 2019-03-14T17:13:39Z 置信度 0.70
• Calibration of Detectors and Tools for EUV-Source Metrology
  crossref Frank Scholze, Gerhard Ulm 2010-11-09T23:48:49Z 置信度 0.70
• Lithography technology for memory device patterning
  crossref Chan Hwang 2024-04-09T17:53:01Z 置信度 0.70
• Improving lifetime and EUV transmission of CNT based pellicles for EUV lithography
  crossref Takumi Furuya 2026-02-19T20:08:04Z 置信度 0.70
• The two-mask stage scanner for High-NA EUV lithography
  crossref Kiwamu Takehisa 2024-09-24T19:17:05Z 置信度 0.70
• Progress in EUV resists status towards high-NA EUV lithography
  crossref Xiaolong Wang, Li-Ting Tseng, Timothee Allenet, Iacopo Mochi 等 2020-05-04T18:48:10Z 置信度 0.70
• Current Progress of EUV Spectral Responsivity Calibration for EUV Lithography at CMS/ITRI
  Abstract To support the development of advanced EUV lithography for the semiconductor industry in Taiwan, a calibration system for photodiodes’ spectral responsivity was established. The current system utilizes the synchrotron radiation light source and the me…
  crossref Yi-Chen Chuang, Cheng-Hsien Chen 2024-10-25T13:51:03Z 置信度 0.70
• EUV lithography: LER design, mask, and wafer impact
  crossref Jiahui Wang, Emily Gallagher, Darko Trivkovic, Rik Jonckheere 等 2024-04-09T17:22:57Z 置信度 0.70
• Full field EUV lithography: lessons learned on EUV ADT imaging, EUV resist and EUV reticles
  crossref E. Hendrickx, A. M. Goethals, A. Niroomand, R. Jonckheere 等 2008-11-20T14:53:53Z 置信度 0.70
• Effect of contaminants on pellicle lifetime for EUV lithography
  crossref Chung-Hyun Ban, In-Hwa Kang, Won-Young Choi, Hye-Keun Oh 2021-02-19T22:00:55Z 置信度 0.70
• Mechanistic investigation of antimony carboxylate photoresists for EUV lithography
  crossref Michael Murphy 2025-05-28T13:58:07Z 置信度 0.70
• Identification, modeling, and observation of disturbing effects in EUV interferometer lithography
  crossref M. Saib, M. Besacier, C. Constancias, P. Michallon 2010-03-18T22:10:38Z 置信度 0.70
• Grazing Angle Collector Contamination
  crossref Valentino Rigato 2009-12-04T22:05:29Z 置信度 0.70
• Optical and EUV Lithography: A Modeling Perspective
  crossref Andreas Erdmann 2021-02-23T20:16:08Z 置信度 0.70
• High NA EUV lithography: Next step in EUV imaging
  crossref Eelco van Setten, Gerardo Bottiglieri, John McNamara, Jan van Schoot 等 2019-03-14T21:13:42Z 置信度 0.70
• Photoresists
  crossref Andreas Erdmann 2021-02-23T20:17:14Z 置信度 0.70
• Investigation of Image Defects in EUV Lithography Experiments
  Physical-optics modeling of EUVL imaging is done with accurate descriptions of the illumination. Two EUVL optical systems are described in this paper: (1) a Schwarzchild camera, illuminated with a laser-plasma source (LPS) and a simple illuminator, and (2) a r…
  crossref W. C. Sweatt, W. W. Chow 2023-02-15T15:36:50Z 置信度 0.70
• Decision letter for "Point-to-Volume Engineering Enables Enhanced Birefringence and Wide Bandgap in Hybrid Halide Ultraviolet Nonlinear Optical Crystals"
  crossref 2026-04-16T21:11:24Z 置信度 0.70
• Decision letter for "Room Temperature Buried Molecular Engineering Boosts the Photovoltaic Performance of Wide-Bandgap and All-Perovskite Tandems"
  crossref 2026-04-16T17:56:51Z 置信度 0.70
• Silicon-Based and Wide-Bandgap Semiconductors: SiC and GaN Devices, Applications, and Future Prospects
  Silicon power devices benefit from a mature industrial chain, but their limited bandgap, critical breakdown field, and thermal conductivity constrain efficiency and reliability under high-voltage, high-frequency, and high-temperature operation. Silicon carbide…
  crossref Jincheng Huang 2026-08-19T07:54:39Z 置信度 0.70
• Time-Resolved Raman Studies of Wide Bandgap Wurtzite GaN
  crossref K.T. Tsen 2026-01-06T14:02:20Z 置信度 0.70
• A new Cobalt (II) isothiocyanate complex with 2-Ethyl-6-Methylanilinium: insight into crystal structure, supramolecular interactions, and electronic properties: a wide-bandgap semiconductor with soft paramagnetic behavior
  crossref Jawher Makhlouf, Asmaa M Fahim, Arto Valkonen, Wajda Smirani Sta 2026-05-07T15:59:03Z 置信度 0.70
• Reliability Analysis and Design of Fault-Tolerant Control Strategies for High-Power Wide-Bandgap (SiC/GaN) Semiconductor-Based Converters in HVDC and FACTS Systems
  High-power Silicon Carbide (SiC) converters are fundamental to modern energy systems, such as HVDC transmission, but their operational reliability remains a critical challenge, this research presents an integrated computational framework designed to holistical…
  crossref Jalal Kamil 2026-05-12T08:36:48Z 置信度 0.70
• Decision letter for "Photostable wide-bandgap perovskites with enhanced interface coupling for all-perovskite tandems"
  crossref 2026-01-08T21:08:48Z 置信度 0.70
• Silicon Low Gain Avalanche Detector Designs and the Emergence of Wide-Bandgap Semiconductor Detectors
  crossref Yashas Satapathy, Ben J. Sekely, Tao Yang, Abraham Tishelman-Charny 等 2026-08-06T19:15:47Z 置信度 0.70