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• Technology Computer Aided Design
  crossref Peter A. Blakey 2018-12-16T04:37:31Z 置信度 0.70
• 5 Metal–Oxide–Semiconductor Field-Effect Transistors
  crossref 2020-11-26T11:35:51Z 置信度 0.70
• Ge/Si hetero-nanocrystal MOSFET memories
  crossref Jianlin Liu, Bei Li 2008-01-12T01:07:19Z 置信度 0.70
• Characterization of Polysilicon-Oxide-Nitride-Oxide-Silicon (SONOS) Nonvolatile Semiconductor Memory (NVSM) Devices
  crossref Xiaonan Steven Wang, Yu Wang, M.J. Chabalko, M.H. White 等 2006-03-10T11:50:57Z 置信度 0.70
• The experiments of device implant process on threshold mismatch for advanced CMOS technology
  crossref S. M. Wang, S. J. Chang, C. Y. Hu 2010-01-20T19:20:17Z 置信度 0.70
• Pseudo arc-length continuation method for multiple solutions in one-dimensional steady state semiconductor device simulation
  crossref Tai-Yih Tso 2018-08-13T15:01:30Z 置信度 0.70
• Resin composition for sealing and semiconductor device
  crossref 2016-09-08T21:40:21Z 置信度 0.70
• Impurity Band Conductivity
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Appendix 2: Abbreviations and Acronyms
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Photonic bandgap based designs for nano-photonic integrated circuits
  crossref E. Yablonovitch 2004-07-08T20:05:44Z 置信度 0.70
• Reliability concerns in contemporary SiC power devices
  crossref R. Singh, A.R. Hefner, T.R. McNutt 2004-07-08T20:05:44Z 置信度 0.70
• Semiconductor device life and system removal rates
  crossref 2003-03-15T06:33:09Z 置信度 0.70
• Transit Time Microwave Devices
  crossref Robert J. Trew 2018-12-16T09:37:31Z 置信度 0.70
• Thermal resistance of the semiconductor structures for a photomixing device
  crossref J. Darmo, F. Schafer, A. Forster, P. Kordos 等 2003-08-27T11:01:47Z 置信度 0.70
• The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation
  crossref A. Liegmann, W. Fichtner 2011-09-16T01:27:02Z 置信度 0.70
• Field-Effect Transistors
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Schottky Diode Frequency Multipliers
  crossref Jack East 2010-02-23T15:02:18Z 置信度 0.70
• 4409672 Dynamic semiconductor memory device
  crossref Yoshihir Takemae 2003-03-15T06:06:46Z 置信度 0.70
• Application of Modelling to Microwave CAD
  crossref D. Michael Brookbanks 2011-12-11T04:54:12Z 置信度 0.70
• Photoconductive Diodes
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.70
• Simulations shed light on key process in semiconductor device manufacturing
  Classical molecular dynamics reveal intricacies of silicon atomic layer etching process with alternating exposure to chlorine gas and argon ions
  crossref Ben Ikenson 2022-02-10T13:33:01Z 置信度 0.70
• Impact of Nanoelectronics in the Semiconductor Field
  crossref G. Boopathi Raja 2022-02-25T21:04:11Z 置信度 0.70
• Resin composition for sealing a semiconductor device
  crossref 2023-03-03T19:16:51Z 置信度 0.70
• New semiconductor device achieves high amplification
  crossref 2013-05-17T21:06:11Z 置信度 0.70
• Contact Resistance and Schottky Barriers
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Thermal simulation for SOI devices combining a thermal circuit model with device simulation
  crossref R. Wettimuny, M.-C. Cheng 2002-11-13T23:37:42Z 置信度 0.70
• Modification of semiconductor device characteristics by lasers
  crossref 2007-01-18T12:18:54Z 置信度 0.70
• Scanning Probe Microscopy for Nanoscale Semiconductor Device Analysis
  crossref Phil Kaszuba 2019-10-11T09:46:51Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-09T20:10:57Z 置信度 0.70
• New two-dimensional dopant delineation techniques for sub-micron device characterization
  crossref Corrado Spinella 2002-07-25T08:55:28Z 置信度 0.70
• Semiconductor device sensitive to magnetic field gradient
  crossref 2008-01-26T12:48:37Z 置信度 0.70
• Principles of Semiconductor Device Operation
  crossref 2010-07-02T19:41:32Z 置信度 0.70
• Heavy Ion Induced Upsets in Semiconductor Devices
  Heavy ions produced at various accelerator facilities have been employed to measure the effect of cosmic rays on semiconductor devices in space. An ion transmission counter, a solid state detector, and a position sensitive detector comprise the beam-monitor sy…
  openalex R. Koga, W. A. Kolasinski, S. S. Imamoto 1985-01-01 置信度 0.72 UpsetDetectorSemiconductor deviceSemiconductor detectorSemiconductor
• Mixed finite volume methods for semiconductor device simulation
  We deal with the two-dimensional numerical solution of the Van Roosbroeck system, widely employed in modern semiconductor device simulation. Using the well-known Gummel's decoupled algorithm leads to the iterative solution of a nonlinear Poisson equation for t…
  openalex Riccardo Sacco, Fausto Saleri 1997-05-01 置信度 0.72 MathematicsFinite volume methodVolume (thermodynamics)SemiconductorApplied mathematics
• Current transport models for nanoscale semiconductor devices
  openalex Viktor Sverdlov, E. Ungersboeck, Hans Kosina, S. Selberherr 2007-12-10 置信度 0.72 Boltzmann equationStatistical physicsMonte Carlo methodScalingPhysics
• Neural-Based Models of Semiconductor Devices for SPICE Simulator
  The paper addresses a simple and fast new approach to implement Artificial Neural Networks (ANN) models for the MOS transistor into SPICE. The proposed approach involves two steps, the modeling phase of the device by NN providing its input/output patterns, and…
  openalex Hanene Ben Hammouda, Mongia Mhiri, Zià ̈d Gafsi, Kamel Besbes 2008-04-01 置信度 0.72 SpiceSimulationComputer scienceElectronic circuit simulationSemiconductor device
• Infrared Light Emission From Semiconductor Devices
  Abstract We present results using near-infrared (NIR) cameras to study emission. characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and ver…
  openalex Daniel L. Barton, Paiboon Tangyunyong, J.M. Soden, A.Y. Liang 等 1996-08-01 置信度 0.72 Near-infrared spectroscopyQuantum efficiencyInfraredOptoelectronicsWavelength
• Generalized Einstein relation for disordered semiconductors—implications for device performance
  The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of qu…
  openalex Yohai Roichman, Nir Tessler 2002-03-18 置信度 0.72 Einstein relationOrganic semiconductorMaterials scienceExcitonDiffusion
• Two-dimensional semiconductors for transistors
  openalex Manish Chhowalla, Debdeep Jena, Hua Zhang 2016-08-17 置信度 0.72 PhosphoreneSiliceneMaterials scienceSemiconductorTransistor
• Liquid‐Crystalline Ordering as a Concept in Materials Science: From Semiconductors to Stimuli‐Responsive Devices
  While the unique optical properties of liquid crystals (LCs) are already well exploited for flat-panel displays, their intrinsic ability to self-organize into ordered mesophases, which are intermediate states between crystal and liquid, gives rise to a broad v…
  openalex Eva‐Kristina Fleischmann, Rudolf Zentel 2013-07-23 置信度 0.72 Liquid crystalLiquid crystallineMaterials sciencePolymerNanotechnology
• Mixed‐RKDG Finite Element Methodsfor the 2‐D Hydrodynamic Modelfor Semiconductor Device Simulation
  In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to t…
  openalex Zhangxin Chen, Bernardo Cockburn, Joseph W. Jerome, Chi‐Wang Shu 1995-01-01 置信度 0.72 Discontinuous Galerkin methodFinite element methodConservation lawApplied mathematicsField (mathematics)
• Investigation of non‐local transport phenomena in small semiconductor devices
  Abstract The hydrodynamic transport model based fin the generalized momentum and energy equations is used to simulate a n + ‐n‐n + one‐dimensional silicon device and the results are compared with Monte Carlo calculations. The non‐local effects are shown to bec…
  openalex A. Gnudi, Farouk Odeh, M. Rudan 1990-05-01 置信度 0.72 Monte Carlo methodMomentum (technical analysis)SiliconThermal conductivityMechanics
• Automatic Generation of Compact Electro-Thermal Models for Semiconductor Devices
  Introduction modeling ofelectro-thWOzs processes becomes increasingly important during semiconductor device development. For example, with th decreasing size and growing complexity of micro-electronic and micro-electro-mech)D) (MEMS) systems,th power dissipati…
  openalex Tamara Bechtold, Evgenii B. Rudnyi, Jan G. Korvink 2003-03-01 置信度 0.72 SemiconductorSemiconductor deviceThermalMaterials scienceEngineering physics
• Delta doping of III–V compound semiconductors: Fundamentals and device applications
  Delta-function-like doping profiles can be obtained in semiconductors by growth-interrupted impurity deposition during molecular-beam epitaxy. The spatial localization of dopants is assessed by the capacitance–voltage profiling technique and secondary ion mass…
  openalex E. F. Schubert 1990-05-01 置信度 0.72 DopantMaterials scienceDopingMolecular beam epitaxyCondensed matter physics
• Upwind Finite Difference Solution of Boltzmann Equation Applied to Electron Transport in Semiconductor Devices
  openalex Emad Fatemi, Faroukh Odeh 1993-10-01 置信度 0.72 Boltzmann equationPoisson's equationConvection–diffusion equationPhysicsPoisson–Boltzmann equation
• Hydrogen-Treated Stable IGZO Thin-Film Transistor with All-Sputtered Gate Stack
  crossref Taewon Seo, Juyoung Yun, Suwon Seong, Hyuk Park 等 2021-04-23T22:40:30Z 置信度 0.70
• Design and Performance Analysis of Single Material and Triple Material Cylindrical Gate All Around Gate Stack Silicon Nanowire FET at 7 nm Technology node
  crossref Shankhamitra Sunani, Satya Sopan Mahato, Raghunandan Swain 2025-12-02T18:44:54Z 置信度 0.70
• System-level optimization and benchmarking for InAs nanowire based gate-all-around tunneling FETs
  crossref Chenyun Pan, A. Ceyhan, A. Naeemi 2013-06-13T20:54:03Z 置信度 0.70
• <i>(Invited) </i>Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization
  crossref Anne-Claire Salaun, Brice Le Borgne, Laurent Pichon 2018-09-21T17:46:53Z 置信度 0.70
• Influence of Gate-Drain Underlap Length on Germanium Gate-All-Around Tunneling Field-Effect-Transistors
  crossref Kai-Xiao Wei, Xiao-Jin Li, Ya-Bin Sun, Yan-Ling Shi 2020-12-22T01:01:05Z 置信度 0.70
• Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate
  Abstract A MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the ful…
  crossref Sagnik Dey, Se-Hoon Lee, Sachin V. Joshi, Prashant Majhi 等 2011-04-05T09:08:33Z 置信度 0.70
• Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts
  crossref Y. Jiang, T. Y. Liow, N. Singh, L.H. Tan 等 2008-08-11T20:22:36Z 置信度 0.70
• Electrothermal Performance Enhancement of Silicon Carbide Gate-All-Around MOSFETs Using a Ferroelectric Gate Stack
  crossref Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Andrea Irace 等 2025-11-03T18:42:30Z 置信度 0.70
• An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory
  crossref D. Verreck, A. Arreghini, G. Van den bosch, M. Rosmeulen 2022-10-29T21:46:14Z 置信度 0.70
• Impact of Reverse Gate Oxide Stacking on Gate All Around Tunnel FET for High Frequency Analog and RF Applications
  crossref Amit Das, Binod Kumar Kanaujia, Vandana Nath, Sonam Rewari 等 2021-02-09T01:24:44Z 置信度 0.70
• Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
  A gate-all-around polycrystalline silicon nanowire (NW) floating-gate (FG) memory device was fabricated and characterized in this work. The cross-section of the NW channels was intentionally made to be triangular in shape in order to study the effects of the c…
  crossref Ko-Hui Lee, Jung-Ruey Tsai, Ruey-Dar Chang, Horng-Chih Lin 等 2013-10-11T15:16:38Z 置信度 0.70
• Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance
  crossref Rajni Gautam, Manoj Saxena, Radhey Shyam Gupta, Mridula Gupta 2013-04-29T18:04:39Z 置信度 0.70
• Gate-Induced Drain Leakage Reduction in Cylindrical Dual-Metal Hetero-Dielectric Gate All Around MOSFET
  crossref Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal 等 2017-12-04T19:18:36Z 置信度 0.70
• Nanoscale Trench Gate Engineered JAM Gate-All-Around (TGE-JAM-GAA) Label-Free BioFET for Charged/Neutral Biomolecules Detection
  crossref Shivani Yadav, Sonam Rewari 2024-08-29T10:11:40Z 置信度 0.70
• Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
  A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling throu…
  crossref Jung-Ruey Tsai, Ko-Hui Lee, Horng-Chih Lin, Tiao-Yuan Huang 2014-03-24T11:31:08Z 置信度 0.70
• A Degradation Model of Double Gate and Gate-All-Around MOSFETs With Interface Trapped Charges Including Effects of Channel Mobile Charge Carriers
  crossref 2014-03-11T18:02:31Z 置信度 0.70
• Channel Material and Inner Spacer Impact on Gate Stack TDDB of Gate-All-Around Nanosheet Transistors
  crossref Huimei Zhou, Shogo Mochizuki, Xiaoli He, Nicolas Loubet 等 2026-05-07T19:51:08Z 置信度 0.70
• Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-&amp;#x043A;/metal-gate: Effects of hydrogen thermal annealing and nanowire shape
  crossref Pouya Hashemi, James T. Teherani, Judy L. Hoyt 2011-01-28T15:08:33Z 置信度 0.70
• High-? transistor characteristics
  crossref Jack C Lee, Katsunori Onishi 2004-11-26T05:04:02Z 置信度 0.70
• Simulation Study of Short Channel Effects in New Hemispherical Gate-All-Around (HGAA) MOS Devices
  This work presents a numerical simulation study of short-channel effect (SCE) in new hemispherical gate-all-around (HGAA) MOS devices. These new HGAA architectures enable the optimization of the gate-electrostatic control of simple GAA MOS devices after roundi…
  crossref Francis Balestra, Gerard Ghibaudo 2026-07-03T09:34:11Z 置信度 0.70
• Gate-All-Around (GAA) NWFET with L g = 10 nm Simulation
  crossref Yung-Chun Wu, Yi-Ruei Jhan 2017-06-21T03:34:23Z 置信度 0.70
• A self-consistent model for hetero-gate all around tunnel FET
  crossref B. Bhowmick, K. Jena, S. Baishya 2014-10-22T20:11:39Z 置信度 0.70
• Dual Gate Junctionless Gate-All-Around (JL-GAA) FETs using Hybrid Structured Channels
  crossref Caleb Meriga, Ravi Teja Ponnuri, B. Vamsi Krishna, Shaik Ahmad Saidulu 等 2020-08-03T22:08:07Z 置信度 0.70
• RF and Linearity Parameter Analysis of Junction-less Gate All Around (JLGAA) MOSFETs and their dependence on Gate Work Function
  crossref Pratikhya Raut, Umakanta Nanda 2021-08-18T23:36:46Z 置信度 0.70
• Modelling and simulation of Si and InAs gate all around (GAA) nanowire transistors
  crossref Neel Chatterjee, Sujata Pandey 2016-04-20T03:26:53Z 置信度 0.70
• An area efficient gate-all-around ring MOSFET
  crossref Ya-Chi Huang, Meng-Hsueh Chiang, Shui-Jinn Wang 2016-10-10T12:07:03Z 置信度 0.70
• Analytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET
  In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Ap…
  crossref T.S.Arun Samuel, N. Arumugam, S.Theodore Chandra 2022-03-01T09:40:24Z 置信度 0.70
• Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
  crossref 2023-05-23T07:40:26Z 置信度 0.70
• NBTI and dynamic variability in highly-scaled planar and gate-all-around MOSFETs
  crossref Ru Huang 2013-03-02T02:38:17Z 置信度 0.70
• Gate-All-Around FETs: Nanowire and Nanosheet Structure
  DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (…
  crossref Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Junjong Lee 等 2020-11-06T11:04:43Z 置信度 0.70
• Triangular Gate-all-around Nanowire FETs with Enhanced Electrical Performance using High-K Dielectric Gate Oxide
  crossref Ankit Gaurav 2016-02-24T05:18:08Z 置信度 0.70
• High performance gate-all-around devices using metal induced lateral crystallization
  crossref V.W.C. Chan, P.C.H. Chan 2002-11-07T20:32:49Z 置信度 0.70
• Gate All Around MOSFETs‐A Futuristic Approach
  crossref Ritu Yadav, Kiran Ahuja 2023-06-25T00:47:53Z 置信度 0.70
• A subthreshold surface potential model to study the effect of dual material gate in gate all around n-TFETs
  crossref Sayani Ghosh, Chandan K. Sarkar 2013-02-08T21:27:32Z 置信度 0.70
• A dopingless gate-all-around (GAA) gate-stacked nanowire FET with reduced parametric fluctuation effects
  crossref Sarabdeep Singh, Ashish Raman 2018-04-16T14:31:15Z 置信度 0.70
• Silicon-on-insulator 'gate-all-around device'
  crossref J.P. Colinge, M.H. Gao, A. Romano-Rodriguez, H. Maes 等 2002-12-04T22:06:48Z 置信度 0.70
• Introduction
  crossref 2009-01-15T12:12:02Z 置信度 0.70
• High-??/metal gate for advanced transistor applications
  crossref Tianli Duan 2019-10-03T07:01:23Z 置信度 0.70
• Multiple Gate Technologies
  crossref Thierry Poiroux, Maud Vinet, Simon Deleonibus 2009-01-15T12:12:02Z 置信度 0.70
• A comparison of performance between double-gate and gate-all-around nanowire MOSFET
  &lt;span lang="EN-MY"&gt;Due to the rapid scaling of &lt;/span&gt;&lt;span&gt;Complementary Metal-Oxide-Semiconductor&lt;/span&gt;&lt;span lang="EN-MY"&gt; (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects …
  crossref Nor Fareza Kosmani, Fatimah A.Hamid, M. Anas Razali 2019-01-26T15:08:01Z 置信度 0.70
• Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications
  crossref Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta 2013-08-02T14:01:00Z 置信度 0.70
• Short Channel Effects suppression in a dual-gate Gate-All-Around Si nanowire junctionless nMOSFET
  crossref M W Rony, Pankaj Bhowmik, Harley R. Myler, Provakar Mondol 2017-02-16T17:32:12Z 置信度 0.70
• Performance Evaluation of Stacked Gate Oxide/High K Spacers Based Gate All Around Device Architectures at 10 nm Technology Node
  crossref Mandeep Singh Narula, Archana Pandey 2022-01-20T13:02:44Z 置信度 0.70
• Analytical Modeling of Threshold Voltage for Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET
  crossref Reddi Ganapati, Visweswara Rao Samoju, Bhaskara Rao Jammu 2020-08-31T13:28:29Z 置信度 0.70
• Static Performance Assessment of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET Under Severe Temperature
  crossref Bhavya Kumar, Megha Sharma, Rishu Chaujar 2022-01-14T20:40:19Z 置信度 0.70
• Gate-All-Around Charge Plasma-Based Dual Material Gate-Stack Nanowire FET for Enhanced Analog Performance
  crossref Sarabdeep Singh, Ashish Raman 2018-04-04T18:05:40Z 置信度 0.70
• Performance Analysis of Gate-All-Around and Ferroelectric Nanowire FETs with HfO ₂ -Based Gate Dielectrics
  crossref Vishwas Verma, Pawan Kumar Verma 2026-05-21T19:40:52Z 置信度 0.70
• (Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization
  The need of miniaturization following Moore’s law has intensified research efforts on silicon nanostructures such as nanowires or nanoribbons that can be used as active part of electronic nano-devices. In this way, nanowires offer great potential as field effe…
  crossref Anne-Claire Salaun, Brice Le Borgne, Laurent Pichon 2020-02-27T13:07:36Z 置信度 0.70
• Novel Architecture in Gate-All-Around (GAA) MOSFET with High-k Dielectric for Biomolecule Detection
  crossref Krutideepa Bhol, Biswajit Jena, Umakanta Nanda, Shubham Tayal 等 2021-07-30T15:51:19Z 置信度 0.70
• Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs
  crossref M. De Marchi, D. Sacchetto, S. Frache, J. Zhang 等 2013-03-20T21:31:24Z 置信度 0.70
• Gate-All-Around Technology for Harsh Environment Applications
  crossref J. P. Colinge 2012-07-29T00:25:55Z 置信度 0.70
• Floating gate potential of gate-all-around floating gate memory cell: parameter extraction and compact model
  Abstract The compact modeling of flash memories is crucial for integrated circuit designers to carry out efficient and precise circuit-level evaluations, particularly in the case of 3D NAND flash where the 3D geometry leads to significant parasitic coupling im…
  crossref Afiq Hamzah, N Ezaila Alias, Zaharah Johari, Michael Loong Peng Tan 等 2024-05-20T18:29:21Z 置信度 0.70
• Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes
  crossref C. C. M. Bordallo, V. B. Sivieri, J. A. Martino, P. G. D. Agopian 等 2016-03-24T16:22:07Z 置信度 0.70
• Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors
  Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a thr…
  crossref Nobuya Mori, Yoshinari Kamakura, Genaddy Mil'nikov, Hideki Minari 2011-02-21T10:13:21Z 置信度 0.70
• Analysis of GaSb/InAs heterojunction Gate All Around Tunnel FET (HGAATFET)
  crossref Ajay, Mridula Gupta, Shashwat Bhattacharya, Sujata Pandey 2016-04-19T23:26:53Z 置信度 0.70