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• Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition
  With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the de…
  datacite Niu, Gang, Kim, Hee-Dong, Roelofs, Robin, Perez, Eduardo 等 2016 置信度 0.66 620Electrical and electronic engineeringelectronic and spintronic devicesinformation storagestructural properties
• Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
  We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtr…
  datacite Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R. 等 2019 置信度 0.66 530Gallium compoundsMOS devicesOxide semiconductorsRefractory materials
• Interfacing optical fibers with plasmonic nanoconcentrators
  The concentration of light to deep-subwavelength dimensions plays a key role in nanophotonics and has the potential to bring major breakthroughs in fields demanding to understand and initiate interaction on nanoscale dimensions, including molecular disease dia…
  datacite Tuniz, Alessandro, Schmidt, Markus A. 2018 置信度 0.66 530Plasmonicsmicrostructured optical fibersmultimaterial and hybrid fibersnanoconcentration of light
• Magnetic properties of GaAs-Fe3Si core-shell nanowires — A comparison of ensemble and single nanowire investigation
  On the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic force mic…
  datacite Hilse, Maria, Jenichen, Bernd, Herfort, Jens 2017 置信度 0.66 530Magnetic force microscopySuperconducting quantum interference devicesMagnetic fieldsFerromagnetic materials
• Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
  Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and theoretical evidence is found for a rapid lateral spreading o…
  datacite Kantner, Markus, Bandelow, Uwe, Koprucki, Thomas, Schulze, Jan-Hindrik 等 2016 置信度 0.66 620Quantum dots (QDs)semiconductor device simulationsingle-photon sources (SPSs)
• Large-range frequency tuning of a narrow-linewidth quantum emitter
  A hybrid system of a semiconductor quantum dot single photon source and a rubidium quantum memory represents a promising architecture for future photonic quantum repeaters. One of the key challenges lies in matching the emission frequency of quantum dots with …
  datacite Zhai, Liang, Löbl, Matthias C., Jahn, Jan-Philipp, Huo, Yongheng 等 2020 置信度 0.66 530photonic quantum repeaterrubidium quantum memorysemiconductor quantum dot single photon source
• Effective Numerical Algorithm for Simulations of Beam Stabilization in Broad Area Semiconductor Lasers and Amplifiers
  Abstract: A 2 + 1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented. The domain decomposition method is…
  datacite Radziunas, M., Čiegis, R. 2014 置信度 0.66 510beam improvementbroad area devicenumerical schemeparallel algorithm
• Noise Sources and Requirements for Confocal Raman Spectrometers in Biosensor Applications
  Raman spectroscopy probes the biochemical composition of samples in a non-destructive, non-invasive and label-free fashion yielding specific information on a molecular level. Nevertheless, the Raman effect is very weak. The detection of all inelastically scatt…
  datacite Jahn, Izabella J., Grjasnow, Alexej, John, Henry, Weber, Karina 等 2021 置信度 0.66 620BacteriaBiosensorConfocal Raman spectrometerFluorescence background
• Phonons in Low-dimensional Semiconductor Structures
  crossref M. P. Blencowe 2010-07-01T20:13:59Z 置信度 0.70
• Capacitance-Voltage Hysteresis Effects in Metal-SiO/sub 2/-Thin Film Organic Semiconductor Devices
  crossref 2011-06-07T14:29:35Z 置信度 0.70
• NUMERICAL SOLUTION OF THE SEMICONDUCTOR EQUATIONS THE FINITE-DIFFERENCE METHOD
  crossref 2012-11-20T08:30:31Z 置信度 0.70
• Semiconductor Lasers
  crossref A. Khan, P. N. Stavrinou, G. Parry 2010-07-01T20:13:59Z 置信度 0.70
• IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
  crossref 2010-10-06T10:24:53Z 置信度 0.70
• The Status of Semiconductor Device Modeling in the Classical Domain
  crossref A.H. Marshak 2005-08-24T16:50:14Z 置信度 0.70
• SEMICONDUCTOR DEVICE CONCEPTS
  crossref GENERAL ELECTRIC RESEARCH LAB SCHENECTADY NY 2017-09-15T17:20:08Z 置信度 0.70
• 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)
  crossref 2020-02-06T16:39:17Z 置信度 0.70
• Semiconductor Heteroepitaxy: Growth Characterization and Device Applications
  crossref 2017-06-27T03:32:38Z 置信度 0.70
• Mathematical Modeling of Semiconductor Devices
  crossref Peter A. Markowich 2013-01-05T16:29:38Z 置信度 0.70
• Numerical Methods and their Application to Device Modelling
  crossref Eric A. B. Cole 2011-12-11T04:54:12Z 置信度 0.70
• Device Simulation
  crossref Gerhard Lutz 2007-06-14T11:03:59Z 置信度 0.70
• Energy bands and effective mass
  crossref 2020-07-10T00:28:35Z 置信度 0.70
• Frontmatter
  crossref 2006-11-02T06:48:26Z 置信度 0.70
• Silicon Device Manufacturing Introduction
  crossref 2008-12-09T05:01:10Z 置信度 0.70
• Recent progress in indium tin oxide/polysilicon semiconductor-insulator-semiconductor (SIS) solar cells
  crossref A.P. Genis, P.A. Smith, C. Osterwald, R. Singh 等 2008-01-12T00:52:49Z 置信度 0.70
• Mechanization of Semiconductor Device Manufacturing 2N559 and 2N1094 Transistors
  crossref M. N. Reppert 2017-09-29T12:54:49Z 置信度 0.70
• Mathematical Treatments
  crossref Sandip Tiwari 2013-11-18T21:34:58Z 置信度 0.70
• Introduction to Semiconductor Device Modelling
  crossref C Snowden 2012-11-20T08:30:31Z 置信度 0.70
• Network Parameters and Relationships
  crossref 2013-11-18T21:35:11Z 置信度 0.70
• Laser Assisted Semiconductor Device Processing
  crossref TRW DEFENSE SYSTEMS GROUP REDONDO BEACH CA 2017-09-15T19:37:54Z 置信度 0.70
• 2012 IEEE Compound Semiconductor IC Symposium
  crossref 2012-03-28T19:32:50Z 置信度 0.70
• 39th IEEE Semiconductor Interface Specialists Conference
  crossref 2008-07-08T19:19:18Z 置信度 0.70
• 48th IEEE Semiconductor Interface Specialists Conference
  crossref 2017-07-25T21:47:29Z 置信度 0.70
• 42nd IEEE Semiconductor Interface Specialists Conference
  crossref 2011-05-25T17:49:13Z 置信度 0.70
• Impact of Device Scaling on VCOs Phase Noise in SiGe HBTs
  crossref U.L. Rohde, A.K. Poddar 2006-03-10T16:50:57Z 置信度 0.70
• 2008 IEEE Compound Semiconductor IC Symposium
  crossref 2008-04-28T17:37:41Z 置信度 0.70
• 2015 IEEE Compound Semiconductor IC Symposium
  crossref 2015-02-20T19:55:36Z 置信度 0.70
• Low-power device design of fully-depleted SOI MOSFETs
  crossref T. Hiramoto, T. Nagumo, T. Ohtou 2004-07-08T16:05:44Z 置信度 0.70
• 2016 IEEE Compound Semiconductor IC Symposium
  crossref 2016-02-01T23:20:55Z 置信度 0.70
• 46th IEEE semiconductor interface specialists conference
  crossref 2015-05-20T18:44:34Z 置信度 0.70
• 40th IEEE Semiconductor Interface Specialists Conference
  crossref 2009-06-25T11:00:03Z 置信度 0.70
• Ammonia sensor device using graphene modified with platinum
  crossref Madhav Gautam, Ahalapitiya H. Jayatissa 2012-01-30T16:47:17Z 置信度 0.70
• <scp>EUV</scp> Lithography Process of Semiconductor Devices
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• 43rd IEEE Semiconductor Interference Specialist Conference
  crossref 2012-09-21T18:02:43Z 置信度 0.70
• 2011 IEEE Compound Semiconductor IC Symposium
  crossref 2011-03-22T15:05:24Z 置信度 0.70
• 2007 IEEE Compound Semiconductor IC Symposium
  crossref 2007-01-04T20:58:40Z 置信度 0.70
• 46th IEEE semiconductor interface specialists conference
  crossref 2015-06-26T22:35:33Z 置信度 0.70
• 42nd IEEE Semiconductor Interface Specialists Conference
  crossref 2011-06-29T19:11:59Z 置信度 0.70
• Electrons in Quantum Semiconductor Structures: An Introduction
  crossref E. A. Johnson 2010-07-01T20:13:59Z 置信度 0.70
• 4335392 Semiconductor device with at least two semiconductor elements
  crossref K Reiter 2004-11-13T11:59:08Z 置信度 0.70
• 43rd IEEE Semiconductor Interference Specialist Conference
  crossref 2012-10-19T18:12:13Z 置信度 0.70
• Introduction to Emerging Semiconductor Devices
  At the moment, the sector of electronics faces huge bottlenecks in power and performance; the most influential current semiconductor technologies are the FinFETs, TFETs, and devices made of 2-D materials. FinFETs provide better electrostatic control and allevi…
  crossref A. Vikas, A. Theja, Meena Panchore 2026-06-21T13:19:31Z 置信度 0.70
• Convergent algorithms suitable for the solution of the semiconductor device equations
  crossref Miroslav Pospíšek 2020-08-09T13:56:22Z 置信度 0.70
• 2007 IEEE Compound Semiconductor IC Symposium
  crossref 2008-07-18T15:27:20Z 置信度 0.70
• Development of a parallel 3D finite element power semiconductor device simulator
  crossref A.R. Brown 2005-11-17T14:57:28Z 置信度 0.70
• Artificial Semiconductor Structures: Electronic Properties and Device Applications
  crossref F. Beltram, F. Capasso 2013-07-10T02:55:26Z 置信度 0.70
• Compound Semiconductor Device Structures
  crossref William E. Stanchina, Juan E Lam 2008-06-04T17:09:26Z 置信度 0.70
• IEEE Transactions on Semiconductor Manufacturing CALL FOR PAPERS for Special Issue on Process-Level Machine Learning Applications in Semiconductor Manufacturing
  crossref 2021-06-08T13:44:31Z 置信度 0.70
• Noise Modelling
  crossref Alain Cappy 2011-12-11T09:54:12Z 置信度 0.70
• CMOS Device Reliability
  crossref 2011-06-20T08:02:48Z 置信度 0.70
• Computer Simulations
  crossref Trevor M. Barton 2011-10-05T05:14:30Z 置信度 0.70
• Review for "An Improved Asymmetrical Multilevel Inverter Topology with Reduced Semiconductor Device Count"
  crossref 2020-11-11T16:01:56Z 置信度 0.70
• Graphene-Based Etch Resist for Semiconductor Device Fabrication
  crossref 2020-05-08T13:05:30Z 置信度 0.70
• 2014 IEEE Compound Semiconductor IC Symposium (CSICS)
  crossref 2014-02-20T19:03:01Z 置信度 0.70
• Tracked Changes. Semiconductor devices. Mechanical and climatic test methods
  crossref 2022-06-23T20:30:21Z 置信度 0.70
• Tracked Changes. Semiconductor devices. Mechanical and climatic test methods
  crossref 2015-06-09T18:48:50Z 置信度 0.70
• Compound Semiconductor Device Modelling
  crossref 2011-12-11T09:54:12Z 置信度 0.70
• Colloidal semiconductor nanocrystals for light-emitting devices : from materials to device perspectives
  crossref Sushant Shendre 2019-09-11T03:47:08Z 置信度 0.70
• Heterostructure Bipolar Transistors
  crossref Sandip Tiwari 2013-11-18T16:34:56Z 置信度 0.70
• Graphene nanoelectronics
  crossref Chun-Yung Sung 2010-01-20T14:20:17Z 置信度 0.70
• Gate Line Edge Roughness Amplitude and Frequency Variation Effects on Intra Die MOS Device Characteristics
  crossref 2011-06-07T18:28:28Z 置信度 0.70
• High performance IGZO TFTs on steel: Device stability and circuit integration
  crossref S.A. Khan, M. Hatalis 2010-01-20T14:20:17Z 置信度 0.70
• Aldert vad der Ziel award
  crossref 2011-06-07T13:33:41Z 置信度 0.70
• INTRODUCTION
  crossref 2012-11-20T03:30:31Z 置信度 0.70
• Differential-Algebraic Problems and Semiconductor Device Simulation
  crossref Uri Ascher 2013-08-10T09:50:37Z 置信度 0.70
• IEEE Standard for Access and Control of Instrumentation Embedded within a Semiconductor Device
  crossref 2014-12-04T15:07:29Z 置信度 0.70
• Physical Constants, Units, and Acronyms
  crossref 2013-11-18T16:35:11Z 置信度 0.70
• Lattice-Mismatch and CMOS
  crossref E.A. Fitzgerald 2006-03-10T11:50:57Z 置信度 0.70
• Full-wave discontinuous Galerkin time-domain methods for semiconductor device simulation
  Méthodes Galerkine discontinues en domaine temporel pour la simulation full-wave de dispositifs à semi-conducteur L'objectif de la présente thèse est le développement d'un solveur Galerkine discontinu en domaine temporel (GDDT) pour la simulation en régime ful…
  crossref Massimiliano Montone 2026-04-07T14:47:10Z 置信度 0.70
• THE 24th INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING
  crossref 2018-06-01T18:49:35Z 置信度 0.70
• Discretisation of the Stationary Device Problem
  crossref Peter A. Markowich 2013-01-05T16:29:38Z 置信度 0.70
• The field effect diode
  crossref F. Taghibakhsh 2004-07-08T16:05:44Z 置信度 0.70
• Modern Semiconductor Physics and Device Applications
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Review for "An Improved Asymmetrical Multilevel Inverter Topology with Reduced Semiconductor Device Count"
  crossref 2020-11-11T16:01:56Z 置信度 0.70
• ISDRS 2011 symposium committee
  crossref 2012-01-30T16:47:17Z 置信度 0.70
• 2013 IEEE Compound Semiconductor IC Symposium (CSICS)
  crossref 2013-03-21T18:02:34Z 置信度 0.70
• Device design for a raised extrinsic base SiGe bipolar technology
  crossref E. Haralson, G. Malm, M. Ostling 2004-07-08T20:05:44Z 置信度 0.70
• Hybrid ferromagnet - semiconductor magnetolectronic device
  crossref M. Johnson 2005-08-25T02:43:29Z 置信度 0.70
• Transport Across Junctions
  crossref Sandip Tiwari 2013-11-18T21:34:58Z 置信度 0.70
• The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devices
  crossref K. Bertilsson, H.-E. Nilsson 2004-07-08T16:05:44Z 置信度 0.70
• International Semiconductor Device Research Symposium
  crossref Robert M. Weikle, II 2017-08-25T16:08:44Z 置信度 0.70
• Device Design Consideration for Nanoscale MOSFET Using Semiconductor TCAD Tools
  crossref Teoh Chin Hong, Razali Ismail 2007-07-12T11:56:21Z 置信度 0.70
• On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation
  crossref S. E. Laux 2011-08-23T22:45:08Z 置信度 0.70
• The 29th International Symposium on Semiconductor Manufacturing
  crossref 2022-07-26T19:30:45Z 置信度 0.70
• International Symposium on Semiconductor Manufacturing (ISSM 2005)
  crossref 2008-02-06T23:13:50Z 置信度 0.70
• Conductivity Measurements of Few Molecule Systems in Metal-Molecule-Metal device Structures
  crossref A.K. Mahapatro, D.B. Janes 2006-03-10T16:50:57Z 置信度 0.70
• THE 24th INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING
  crossref 2018-06-29T19:06:37Z 置信度 0.70
• CAESAR: a virtual IC factory in an undergraduate semiconductor device fabrication laboratory
  crossref A. Asenov 2005-11-17T14:57:28Z 置信度 0.70
• SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2015)
  crossref 2014-09-23T18:53:21Z 置信度 0.70
• Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-Based Fuse Device
  crossref Myonghoon Kwak, Sangmin Lee, Seyoung Kim, Hyunsang Hwang 2020-07-13T21:16:01Z 置信度 0.70
• 2014 IEEE Compound Semiconductor IC Symposium (CSICS)
  crossref 2014-03-20T18:03:49Z 置信度 0.70