半导体与先进封装 · 全部实体（第 68 / 100 页）

本页收录第 6701–6800 条，共 10000 条 · 返回 半导体与先进封装 首页

• 2013 IEEE Compound Semiconductor IC Symposium (CSICS)
  crossref 2013-01-23T19:36:33Z 置信度 0.70
• Smart-power device model coupling compact, distributed and logic level description
  crossref Alberto Castellazzi, Mauro Ciappa 2008-01-11T20:07:19Z 置信度 0.70
• An introduction to the quantum theory
  crossref 2020-07-10T00:28:35Z 置信度 0.70
• Process control for III—V semiconductor device fabrication using mass spectroscopy
  crossref A.P. Webb 2012-12-04T06:12:51Z 置信度 0.70
• Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study
  crossref L.C. Yu, K. Sheng 2006-03-10T11:50:57Z 置信度 0.70
• Experimental survey of semiconductor power device operation at low temperature
  crossref K.B. Hong, R.C. Jaeger 2003-01-13T15:03:52Z 置信度 0.70
• The 24th International Symposium on Semiconductor Manufacturing CFP
  crossref 2016-07-01T20:08:43Z 置信度 0.70
• Compound Semiconductor Device Structures
  crossref William E. Stanchina, Juan E Lam 2008-05-28T08:47:55Z 置信度 0.70
• Growth and Characterization of Self-Assembled Semiconductor Macroatoms
  crossref R. Rinaldi 2010-03-04T07:32:36Z 置信度 0.70
• Reliability prediction modeling of semiconductor light emitting device
  crossref Jingsong Xie, M. Pecht 2004-02-24T21:01:05Z 置信度 0.70
• Semiconductor Device Modeling for Circuit and System Design
  crossref 2022-11-04T00:54:08Z 置信度 0.70
• Maturing ion-implantation technology and its device applications in SiC
  crossref M.V. Rao 2002-11-13T23:37:42Z 置信度 0.70
• Process and device characteristics of Pd nanocrystals MOS memory
  crossref Ch. Sargentis, K. Giannakopoulos, A. Travlos, D. Tsamakis 2004-07-08T16:05:44Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-11-13T16:57:54Z 置信度 0.70
• Session TU15: Semiconductor device technologies II
  crossref 2011-03-08T04:44:47Z 置信度 0.70
• Semiconductors
  crossref Mike Harris 2018-12-16T09:37:31Z 置信度 0.70
• The 24th International Symposium on Semiconductor Manufacturing CFP
  crossref 2016-04-25T18:06:39Z 置信度 0.70
• The 24th International Symposium on Semiconductor Manufacturing CFP
  crossref 2016-07-26T20:42:59Z 置信度 0.70
• Effects of Gate-Edge Metamorphoses (GEM) on device characteristics of scaled MOSFETs
  crossref Tatsuya Yamada, Nobuyuki Sano 2008-01-11T20:07:19Z 置信度 0.70
• A semiconductor device manufacturer's efforts for controlling and evaluating atmospheric pollution
  crossref K. Kanzawa, J. Kitano 2002-11-19T13:29:13Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• Session MO4: Semiconductor device technologies I
  crossref 2011-03-08T04:44:47Z 置信度 0.70
• Parallel domain decomposition for 3D semiconductor device simulation
  crossref G. Antonoiu, G. Dima, M.D. Profirescu 2002-11-27T22:08:06Z 置信度 0.70
• A Novel 4.5$\hbox{F}^{2}$ Capacitorless Semiconductor Memory Device
  crossref Peng-Fei Wang, Yi Gong 2008-10-07T15:11:47Z 置信度 0.70
• Analytical Model of the Metal-Semiconductor Contact for Device Simulation
  crossref A. Schenk, S. Müller 2011-09-16T05:27:02Z 置信度 0.70
• Equivalent Circuit Modelling
  crossref Stavros Iezekiel 2011-12-11T04:54:12Z 置信度 0.70
• Semiconductor Device Physics and Simulation
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.70
• 16th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
  crossref 2008-02-06T23:13:50Z 置信度 0.70
• Review of Semiconductor Devices
  crossref Carlo Jacoboni, Paolo Lugli 2011-09-27T20:51:46Z 置信度 0.70
• IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components--Corrigendum 1
  crossref 2018-12-14T15:28:10Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2015-06-09T20:10:57Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2013-11-13T21:57:54Z 置信度 0.70
• Optically-activated gate control of power semiconductor device switching dynamics
  crossref Sudip K. Mazumder, Tirthajyoti Sarkar 2009-07-07T22:21:37Z 置信度 0.70
• 41st IEEE Semiconductor Interface Specialists Conference (SISC 2010)
  crossref 2010-10-27T20:19:17Z 置信度 0.70
• Modelling of Noise Processes
  crossref Alain Cappy 2011-10-05T05:14:30Z 置信度 0.70
• SiGe Heterostructure Devices and Applications
  crossref S.J. Koester 2006-03-10T16:50:57Z 置信度 0.70
• Index
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Test Method for Apparent Density of Ceramics for Electron Device and Semiconductor Application
  crossref 2008-08-27T13:33:34Z 置信度 0.70
• Front Matter
  crossref 2010-02-23T10:02:18Z 置信度 0.70
• International Semiconductor Conference (CAS)
  crossref 2010-03-08T11:48:16Z 置信度 0.70
• Semiconductor Device Analysis
  crossref G. De Mey 2012-04-13T11:24:52Z 置信度 0.70
• Test Method for Apparent Density of Ceramics for Electron Device and Semiconductor Application
  crossref 2008-08-28T22:08:31Z 置信度 0.70
• HBT Modelling
  crossref Robert E. Miles 2011-12-11T04:54:12Z 置信度 0.70
• MESFET Modelling
  crossref Christopher M. Snowden 2011-12-11T09:54:12Z 置信度 0.70
• FRONT MATTER
  crossref 2012-11-20T08:30:31Z 置信度 0.70
• Aldert van der Ziel Award
  crossref 2012-01-30T16:47:17Z 置信度 0.70
• Mobility
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Scaling and Operational Limitations
  crossref Sandip Tiwari 2013-11-18T21:35:04Z 置信度 0.70
• Deep UV LEDs
  crossref Remis Gaska 2012-01-30T16:47:17Z 置信度 0.70
• Integrated Circuit Technology
  crossref Malcolm E. Goodge 2015-10-07T17:46:28Z 置信度 0.70
• Metals
  crossref Mike Golio 2018-12-16T09:37:31Z 置信度 0.70
• The ITRS metrology roadmap
  crossref A.C. Diebold 2010-01-20T14:20:17Z 置信度 0.70
• Nanosystems - The Next MEMS Revolution
  crossref D.L. Polla 2006-03-10T11:50:57Z 置信度 0.70
• The 24th International Symposium on Semiconductor Manufacturing CFP
  crossref 2016-05-24T14:50:53Z 置信度 0.70
• SEMICONDUCTOR DEVICE SIMULATION
  crossref C.L. Wilson, J.L. Blue 2014-07-01T11:31:55Z 置信度 0.70
• BACK MATTER
  crossref 2012-11-20T03:30:31Z 置信度 0.70
• Session TH10: Semiconductor device technologies III
  crossref 2011-03-08T04:44:47Z 置信度 0.70
• Technical sessions at a glance
  crossref 2012-01-30T16:47:17Z 置信度 0.70
• Varactors
  crossref Jan Stake 2018-12-16T09:37:31Z 置信度 0.70
• Semiconductor Device Processing
  crossref Manijeh Razeghi 2009-12-10T17:29:07Z 置信度 0.70
• New Tools for Molecular Electronics
  crossref J.G. Kushmerick 2006-03-10T11:50:57Z 置信度 0.70
• Semiconductor device characteristics
  crossref 2012-06-19T17:42:01Z 置信度 0.70
• Appendix C: General Applications of Device Groups
  crossref 2015-05-18T23:24:59Z 置信度 0.70
• Quantum Transport Modelling
  crossref John R. Barker 2011-10-05T05:14:30Z 置信度 0.70
• Semiconductor laser device modeling
  crossref J. V. Moloney 2003-02-20T12:55:55Z 置信度 0.70
• Defects
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Semiconductor devices. Micro-electromechanical devices
  crossref 2019-05-01T20:32:07Z 置信度 0.70
• 3 Semiconductor Fabrication
  crossref 2020-11-26T11:35:51Z 置信度 0.70
• Resistivity
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Semiconductor devices. Micro-electromechanical devices
  crossref 2019-05-01T16:32:07Z 置信度 0.70
• Solutions to Selected Exercises
  crossref 2010-07-01T20:13:59Z 置信度 0.70
• Nanowires for Nanoscience and Nanotechnology
  crossref C.M. Lieber 2006-03-10T11:50:57Z 置信度 0.70
• Tables
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Semiconductor Device Technology
  crossref Manijeh Razeghi 2009-12-10T17:29:07Z 置信度 0.70
• Preface
  crossref 2010-07-01T20:13:59Z 置信度 0.70
• The Device Equations of Shockley and Stratton
  crossref 2010-01-12T18:37:45Z 置信度 0.70
• Enhancing Biotechnological Applications Using an Optimized Semiconductor Refrigeration Device
  crossref 2025-10-08T13:00:17Z 置信度 0.70
• Power Semiconductor Devices and Smart Power IC Technologies CFP
  crossref 2016-07-26T20:42:59Z 置信度 0.70
• 22nd IEEE NVSMW Non-Volatile Semiconductor Memory Workshop 2007
  crossref 2008-07-18T15:27:20Z 置信度 0.70
• Device-Device Interactions
  crossref D. K. Ferry 2013-06-28T14:49:55Z 置信度 0.70
• Double Gate 3D AC Switch - a new power semiconductor device
  crossref K. Sheng, F. Udrea, G.A.J. Amaratunga 2015-07-16T14:23:24Z 置信度 0.70
• Power Semiconductor Devices and Smart Power IC Technologies CFP
  crossref 2016-05-24T14:50:53Z 置信度 0.70
• Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
  crossref Gan Wang, Nathan Eichenlaub, Yanli Zhang, Marvin H. White 2008-01-12T01:07:19Z 置信度 0.70
• Power semiconductor device modelling dedicated to circuit simulation
  crossref P. Leturcq 2003-01-20T15:55:24Z 置信度 0.70
• Power Semiconductor Devices and Smart Power IC Technologies CFP
  crossref 2016-04-25T18:06:39Z 置信度 0.70
• Miniaturized homo-polar rotating liquid device on Si substrates
  crossref Z. Sanaee, S. Mohajerzadeh, H. Miladi, M. Araghchini 2010-01-20T19:20:17Z 置信度 0.70
• Modeling GaN HEMTs using thermal particle-based device simulator
  crossref B. Padmanabhan, A. Ashok, D. Vasileska, S.M. Goodnick 2010-01-20T14:20:17Z 置信度 0.70
• GE SiC Semiconductor Device Operation at Extreme Temperatures
  Abstract GE Research has been working on the design, packaging, and testing of SiC Power semiconductors devices at junction temperatures up to 500°C for the past 5 years. Intrinsically, SiC power devices are able to endure and operate reliably at harsh environ…
  crossref David Esler 2021-06-22T16:48:35Z 置信度 0.70
• An overview of nanoscale device modeling and requirements in the semiconductor industry
  crossref E. Ramola, J. Charles Pravin 2026-08-24T15:15:20Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-11-13T16:57:54Z 置信度 0.70
• Electrical characteristics of epitaxial /spl gamma/-Al/sub 2/O/sub 3/ films for quantum tunneling device
  crossref 2011-06-07T18:29:35Z 置信度 0.70
• Amorphous Metallizations for HighTemperature Semiconductor Device Applications
  crossref 2010-02-04T21:14:37Z 置信度 0.70
• Retina-Inspired 2D Semiconductor NIR Sensor with PRO Architecture for Photodetection.
  europepmc 2026 置信度 0.80
• Third Field Data Processing
  This is a high-level technical package for the Stone Protocol Evolutionary Engine (SP-EE-V1). Each document is designed for public professional presentation, emphasizing the shift from probabilistic software to deterministic, etched-silicon medical logic. Sect…
  datacite Stone, Travis Raymond-Charlie 2026 置信度 0.66
• Third Field Data Processing
  This is a high-level technical package for the Stone Protocol Evolutionary Engine (SP-EE-V1). Each document is designed for public professional presentation, emphasizing the shift from probabilistic software to deterministic, etched-silicon medical logic. Sect…
  datacite Stone, Travis Raymond-Charlie 2026 置信度 0.66
• preGQR-7: Materials, Interfaces, and Energy Transfer in Functional Systems
  preGQR-7 — Materials, Interfaces, and Energy Transfer in Functional Systems 🧬⚡🧱 Applied Materials and Interface Framework preGQR-7 develops the materials and interface layer of the preGQR sequence. Where earlier volumes focused primarily on: transport cataly…
  datacite SUTTON, JAMES 2026 置信度 0.66
• preGQR-7: Materials, Interfaces, and Energy Transfer in Functional Systems
  preGQR-7 — Materials, Interfaces, and Energy Transfer in Functional Systems 🧬⚡🧱 Applied Materials and Interface Framework preGQR-7 develops the materials and interface layer of the preGQR sequence. Where earlier volumes focused primarily on: transport cataly…
  datacite SUTTON, JAMES 2026 置信度 0.66
• Thin-film transistor : characterization, scaling studies, and applications in electrochemical charge sensing
  The volume of data created and consumed worldwide has been increasing exponentially every year and is expected to reach 181 zettabytes by the year 2025. This requires innovation of the memory stack ranging from faster memory, such as flash and hard disk memory…
  datacite Zhou, Yuchen, 0000-0001-9012-8072 2025 置信度 0.66 Device scalingContact resistanceTwo-dimensional materialsInformation storageElectrochemistry
• "Enhanced performance in two-dimensional materials based devices through dielectric integration by plasma-enhanced atomic layer deposition“
  The relentless pursuit of smaller, faster and more efficient electronic devices has driven continuous innovation in transistor technology. As traditional silicon-based transistors approach their fundamental limits, achieving further miniaturization and improve…
  datacite Esteki, Ardeshir 2026 置信度 0.66 HochschulschriftPEALD , 2D Materials , FETs , photodiodes , graphene , MoS2 , AlOX , gate dielectric
• Recent application studies of an INTPIX4NA SOIPIX detector-based X-ray camera using an SiTCP-XG 10GbE-based high-speed readout system at KEK facilities
  The Silicon-On-Insulator PIXel (SOIPIX) detector is a unique monolithic structure imaging device currently being developed by the SOIPIX group, led by the High Energy Accelerator Research Organization (KEK). Our detector team at the KEK Photon Factory (PF) has…
  datacite Nishimura, Ryutaro, Igarashi, Noriyuki, Wakabayashi, Daisuke, Shibazaki, Yuki 等 2026 置信度 0.66 Instrumentation and Detectors (physics.ins-det)Medical Physics (physics.med-ph)Optics (physics.optics)FOS: Physical sciences