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• Polarity Engineering in a Single MoTe<sub>2</sub> Device for Homogeneous Complementary Circuit Applications.
  europepmc 2025 置信度 0.80
• Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device
  crossref Abhishek Kumar, Avirup Dasgupta 2024-07-29T19:15:01Z 置信度 0.70
• Device Physics and Modeling Attributes of Tunneling Based MOSFET Device Architectures
  crossref Nabil Shovon Ashraf 2024-06-18T15:17:26Z 置信度 0.70
• Semiconductor Devices from a Circuit-Theoretic Standpoint
  crossref Kazuya Masu, Shuhei Amakawa 2024-10-30T16:11:16Z 置信度 0.70
• Elementary Semiconductor Device Physics
  crossref Kazuya Masu, Shuhei Amakawa 2024-10-30T16:11:16Z 置信度 0.70
• Ferroelectric n-FET Device Physics Based Review
  crossref Nabil Shovon Ashraf 2024-06-18T11:17:26Z 置信度 0.70
• Conservative Numerical Algorithm for Simulating Thermoelectrical Semiconductor Device with Unconditional Optimal Convergence Analysis
  crossref Xindong Li, Wenwen Xu 2024-04-27T23:18:03Z 置信度 0.70
• Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
  crossref 2024-06-28T18:42:02Z 置信度 0.70
• Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
  crossref 2024-01-29T18:42:33Z 置信度 0.70
• Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
  crossref 2023-12-29T19:56:47Z 置信度 0.70
• (Invited) Barriers to SiC Power Semiconductor Device Commercialization
  There are several reasons behind silicon’s dominance of the power electronics market. Silicon is renowned for its excellent starting material quality, ease of processing, opportunity for low-cost mass production, proven reliability, and circuit design legacy. …
  crossref Victor Veliadis 2024-12-19T22:12:55Z 置信度 0.70
• Introduction
  crossref Kazuya Masu, Shuhei Amakawa 2024-10-30T16:11:16Z 置信度 0.70
• Advanced Automatic Device Temperature Characterization for Hybrid STEM Learning
  crossref Alexandru Mihai Antonescu, Florin-Silviu Dumitru, Marius Enachescu 2024-10-31T17:33:03Z 置信度 0.70
• MOS Transistors
  crossref Kazuya Masu, Shuhei Amakawa 2024-10-30T16:11:16Z 置信度 0.70
• 3 Semiconductor Fabrication
  crossref 2024-04-22T10:20:51Z 置信度 0.70
• Thermal-Budget-Decoupled Integration of Freestanding Hafnium-Based Ferroelectric Dielectrics for van der Waals Memory Transistors.
  europepmc 2026 置信度 0.80
• Synergistic Effect of Guanidinium Iodide and Cesium Iodide for Enhanced Perovskite Crystal Quality and Device Performance in Hybrid Perovskite Solar Cells.
  europepmc 2026 置信度 0.80
• Engineering of Optoelectronic Devices for Renewable Energy Applications.
  Optoelectronic devices are emerging as a cornerstone of advanced renewable energy technologies, offering innovative routes for energy harvesting, conversion, and management with high efficiency and versatility. This review summarizes recent advances in the sem…
  europepmc 2026 置信度 0.80
• Selectively Demarcating and Modifying Defects in Two-Dimensional Semiconductors in a 300 mm Fab
  europepmc 2026 置信度 0.80
• Interface engineering of perovskite transistors with self-assembled monolayers.
  europepmc 2026 置信度 0.80
• UV-Visible-NIR Miniaturized Spectrometer Based on InSe/GaN Heterojunction.
  europepmc 2026 置信度 0.80
• Interface-Engineered, Low-Damage IGZO/HfO<sub>2</sub> Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process.
  europepmc 2026 置信度 0.80
• Emergent Electronic Insulating States in a One-Dimensional Moiré Superlattice.
  europepmc 2026 置信度 0.80
• Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device.
  europepmc 2016 置信度 0.80
• A Perspective on Direct Binary Capacitance Detectors for Decision-Driven Biochemical and Lab-on-Chip Applications: A CMOS Cross-Coupled-Based Capacitance Detector.
  europepmc 2026 置信度 0.80
• Revealing the Nanoindentation-Induced Plastic Deformation Mechanisms of 4H-SiC: Combined Insights from Molecular Dynamics Simulations and Experiments.
  europepmc 2026 置信度 0.80
• Oxidative Polycondensation of Pyrazolone-Based Schiff Bases: Synthesis, Structural Characterization, Thermal and Electrical Properties.
  europepmc 2026 置信度 0.80
• Interface Engineering and Substitutional Doping in In<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> for High-Performance 2D p-Type FETs and CMOS Devices.
  europepmc 2026 置信度 0.80
• Optimizing electrical contacts on individual p-i-n GaAs nanowires by site-specific focused ion beam processing.
  europepmc 2026 置信度 0.80
• Full-Photolithographic High-Density Skin-Like Transistor Arrays for All-Organic Active-Matrix Displays.
  europepmc 2026 置信度 0.80
• Dual-Mode MOSCAP Silicon Microring Resonator for Energy-Efficient Analog Optical Computing.
  europepmc 2026 置信度 0.80
• Intrinsically stretchable large-area pixelated electrochromic displays via direct photopatterning.
  europepmc 2026 置信度 0.80
• Tailorable 2D MoS<sub>2</sub> via Oxide Sulfidation for Photodetection and Contact Engineering.
  europepmc 2026 置信度 0.80
• Performance comparison of coupled-resonator optical waveguide Mach-Zehnder modulators with III-V SIS structures.
  europepmc 2026 置信度 0.80
• Graphene (0002)/Diamond (111) Heterojunction with High Piezoresistive Response.
  europepmc 2026 置信度 0.80
• Statistical mechanics for organic mixed conductors: Phase transitions in a lattice gas.
  Organic mixed conductors (OMCs) represent a promising class of materials for applications in bioelectronics, physical computing, and thermoelectrics. Rather unparalleled, OMCs feature dynamics spanning multiple length and timescales, involving an intricate cou…
  pubmed Bongartz LM 2026 置信度 0.82
• A tellurium-free GeSbSe thin film for reliable selector-only memory operation.
  europepmc 2026 置信度 0.80
• Thermally Driven Supramolecular Chirality Evolution in Low-Bandgap Fused-Ring Conjugated Molecules for High-Performance NIR Circularly Polarized Light Detection.
  europepmc 2026 置信度 0.80
• Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector-Only Memory beyond the Leakage Scaling Limit.
  europepmc 2026 置信度 0.80
• Oxygen-Assisted MOCVD Growth of Monolayer PtSe<sub>2</sub> Films With Bandgap Opening for Semiconducting FET Channels.
  europepmc 2026 置信度 0.80
• Giant bulk photovoltaic effect in an iron-based magnetic semiconductor.
  europepmc 2026 置信度 0.80
• A Rapid-prototyping CMOS-RRAM Integration Strategy.
  europepmc 2026 置信度 0.80
• Dual-functional acetogenin nanofibers: bridging biomedical activity with brain-inspired neuromorphic devices.
  europepmc 2026 置信度 0.80
• Imaging Results from a Direct Conversion X-ray Detector with TlBr and CMOS Pixel Array.
  europepmc 2026 置信度 0.80
• A Chemically Programmable Retinomorphic GaN p-n Diode for Multimode Visual Sensing.
  europepmc 2026 置信度 0.80
• Nanowire Quantum Dot Emitters Evanescently Coupled On-Chip via Curved and Segmented SiN Waveguides.
  This work implements a hybrid device based on a semiconductor quantum dot embedded within a nanowire to bridge a noncontinuous curved waveguide structure. The geometry takes advantage of evanescent coupling between the photonic structures to recover single pho…
  pubmed Yeung E, Sorensen K, Northeast DB, Milanizadeh M 等 2026 置信度 0.82
• Thermally activated excess noise by subgap density-of-states in Si-doped ZnSnO thin-film transistor-type gas sensor.
  europepmc 2026 置信度 0.80
• Energy- and Area-Efficient Ionic-Switch Activation Neuron for Monolithic 3D Neural Network Architectures.
  europepmc 2026 置信度 0.80
• Persistence of Large and Gate-Tunable Anisotropic Magnetoresistance in an Atomically Thin Antiferromagnet.
  Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the Néel vector via AM…
  pubmed Cheon CY, Watanabe K, Taniguchi T, Morpurgo AF 等 2026 置信度 0.82
• Digital Twin Platform for Accelerating Optimization of Oxide Semiconductor Transistors to Overcome Fundamental Performance-Reliability Trade-off
  europepmc 2026 置信度 0.80
• Hardware realization of memory-augmented neural networks using multi-level RRAM arrays.
  europepmc 2026 置信度 0.80
• Two-dimensional semiconductor photodetectors: from physical mechanisms to intelligent sensing system integration.
  europepmc 2026 置信度 0.80
• An Investigation of the Electrical Performance of Polymer-Based Stretchable TFTs Under Mechanical Strain Using the Y-Function Method.
  europepmc 2026 置信度 0.80
• Organic-assisted band engineering enables high-performance self-powered solar-blind 4H-SiC photodetectors.
  europepmc 2026 置信度 0.80
• Graphene Oxide Nanosheets-Supported ZnS Cluster Triangle Assemblies Enabling Self-Powered Solar-Blind Photodetectors With Ultrahigh Selectivity and Sensitivity.
  europepmc 2026 置信度 0.80
• Electrical Threshold Gain Engineering for High-Speed Direct Modulation in Two-Dimensional Semiconductor Laser.
  europepmc 2026 置信度 0.80
• Te/Fe<sub>3</sub>GaTe<sub>2</sub> 1D-2D Ferroelectric Heterojunction Transistors Enabling Ultrafast Multi-State Switching for Workpiece Surface Defect Inspection.
  europepmc 2026 置信度 0.80
• Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications.
  europepmc 2026 置信度 0.80
• Ultra-High Gain Vertically Stacked WS2 NMOS Inverter Enabled by Co-Optimization of Layer Number and Contact Metal.
  europepmc 2026 置信度 0.80
• Next-generation quantum dot solar cells: advances in materials, device engineering and performance optimization.
  europepmc 2026 置信度 0.80
• From Moore's Law to the Volume-Inverse Law
  europepmc 2026 置信度 0.80
• Deciphering the Crystallinity-Dependent Sensitivity of Charge Injection in n-Channel Organic Transistors: Reliable Characterization and Optimized Performance.
  europepmc 2026 置信度 0.80
• Dynamic Probing of Neutron-Induced Reliability Degradation in MoS<sub>2</sub> and WS<sub>2</sub> Transistors.
  europepmc 2026 置信度 0.80
• Ultrafast Electrical Charge Injection in Operating Perovskite Light-Emitting Diodes by Infrared Optical Control
  europepmc 2026 置信度 0.80
• A feature-enhanced transformer for point-like micro-defect detection on semiconductor wafer surfaces.
  europepmc 2026 置信度 0.80
• Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior.
  Integrating optical sensing and memory within a unitary semiconductor architecture is pivotal for circumventing the von Neumann bottleneck. Although conventional photonic memristors offer a promising solution, they are frequently constrained by a narrow spectr…
  pubmed Chu J, Zheng K, Wang Y, Song J 2026 置信度 0.82
• Spectrally Flat and Polarization-Diversified Silicon-Nanowire Coarse WDM Demultiplexers Based on Distributed Multimode-Interference Phase Compensations.
  europepmc 2026 置信度 0.80
• Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs.
  europepmc 2026 置信度 0.80
• Avalanche-Enhanced Infrared Photodetection via Interlayer Absorption in a WSe2/MoS2 Heterostructure.
  Infrared photodetectors are crucial for a broad range of emerging optical applications. Type-II band alignment in two-dimensional (2D) heterostructures whose constituent layers possess visible-range bandgaps enables sub-bandgap infrared photoresponse via inter…
  pubmed Son B, Son H, Kim Y, Kim D 等 2026 置信度 0.82
• Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking.
  europepmc 2026 置信度 0.80
• Electrical Characterization of Mesh-Structured Floating-Gate Neuromorphic Transistors with Varying Mesh Sizes.
  europepmc 2026 置信度 0.80
• Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation.
  europepmc 2026 置信度 0.80
• Platinum-nanostructured silicon microneedles with scalable fabrication for EEG biosensing.
  europepmc 2026 置信度 0.80
• Post-Moore two-dimensional integrated electronics for angstrom-nodes.
  europepmc 2026 置信度 0.80
• Photonic and Optoelectronic Devices and Systems, 4th Edition.
  europepmc 2026 置信度 0.80
• Topology-directed silicide formation: an explanation for the growth of C49-TiSi<sub>2</sub> on the Si(100) surface.
  europepmc 2026 置信度 0.80
• All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.
  europepmc 2026 置信度 0.80
• Research on Low Numerical Aperture 808 nm Fiber-Coupled Semiconductor Laser.
  europepmc 2026 置信度 0.80
• Design and Optimization of AlGaN/GaN Graded Barrier MOS-HEMT Biosensor for Breast Cancer Biomolecule detection.
  In this paper, we have designed and simulated an AlGaN/GaN graded barrier metal oxide semiconductor high electron mobility transistor (MOS-HEMT) heterojunction biosensor for detection of Breast Cancer biomolecules. A graded AlGaN barrier layer is utilized to e…
  pubmed Karumuri SR, Prasanna RL, Sreenivasulu VB, Kondavitee GS 2026 置信度 0.82
• Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors.
  europepmc 2026 置信度 0.80
• Self-Trapped Excitons and Room-Temperature Ferroelectricity in Quasi-One-Dimensional Semiconductor BiSeBr for Polarization-Sensitive Optoelectronics.
  europepmc 2026 置信度 0.80
• PTFE-Based Triboelectric Nanogenerator with All-Symmetric Tribolayers Enabled by Self-Excited Charge Injection for Highly Corrosive Environments.
  europepmc 2026 置信度 0.80
• Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory.
  europepmc 2026 置信度 0.80
• A detailed investigation of a-IGZO thin film-based MSM UV photodetector.
  europepmc 2026 置信度 0.80
• In Situ Regenerative Adduct Assisted p-Type Doping of Organic Semiconductor.
  europepmc 2026 置信度 0.80
• An Ab-initio Study of the Electronic and Optical Properties of 3d Transition Metals doped Germanene
  Density Functional Theory (DFT) computations have been used to look into the electrical and optical characteristics of 3D Germanene sheets doped with transition metals (TM). Recent years have seen a major increase in interest in germanene, a two-dimensional al…
  datacite Anas, Khan Ahmad, Husen, S. Tahir, Rai, Sachin, Aziz, Mohammad Imran 等 2023 置信度 0.66 GermaneneTransition metal doped GermaneneDensity Functional Theory
• An Ab-initio Study of the Electronic and Optical Properties of 3d Transition Metals doped Germanene
  Density Functional Theory (DFT) computations have been used to look into the electrical and optical characteristics of 3D Germanene sheets doped with transition metals (TM). Recent years have seen a major increase in interest in germanene, a two-dimensional al…
  datacite Anas, Khan Ahmad, Husen, S. Tahir, Rai, Sachin, Aziz, Mohammad Imran 等 2023 置信度 0.66 GermaneneTransition metal doped GermaneneDensity Functional Theory
• Schrödinger-Poisson Solver
  This simulator provides a self-consistent 1D Schrödinger–Poisson framework for analyzing quantum-well heterostructures. It calculates band profiles, quantum-confined electron eigenstates, wavefunctions, and subband-related electronic properties. The solver eva…
  datacite Hwang, Inyong 2026 置信度 0.66 Schrödinger–PoissonMQWsQuantum-Wells
• Financial data of selected companies in the semiconductor industry
  18 semiconductor companies observed for six fiscal years each, giving 108 company-years and 90 adjacent annual transitions. The firms are assigned ex ante to five industry families according to their operating model: two fabless designers (NVIDIA and AMD), fou…
  datacite Wasniewski, Krzysztof 2026 置信度 0.66
• Financial data of selected companies in the semiconductor industry
  18 semiconductor companies observed for six fiscal years each, giving 108 company-years and 90 adjacent annual transitions. The firms are assigned ex ante to five industry families according to their operating model: two fabless designers (NVIDIA and AMD), fou…
  datacite Wasniewski, Krzysztof 2026 置信度 0.66
• A Technical and Feasible Architecture to Stop 18+ Adult and Age-Restricted Content to Children ( A Technical Approach to Enforce Digital Services Act in Europe )
  Problem Space Current child-safety systems largely make decisions before the final rendering boundary. Platforms may verify age, classify content, apply parental controls, enforce account restrictions, filter recommendations, or deny access at the application …
  datacite Das, Sangam 2026 置信度 0.66
• A Technical and Feasible Architecture to Stop 18+ Adult and Age-Restricted Content to Children ( A Technical Approach to Enforce Digital Services Act in Europe )
  Problem Space Current child-safety systems largely make decisions before the final rendering boundary. Platforms may verify age, classify content, apply parental controls, enforce account restrictions, filter recommendations, or deny access at the application …
  datacite Das, Sangam 2026 置信度 0.66
• <strong>Gate-thickness-dependent nonvolatile modulation of monolayer MoS₂ channels by epitaxial Al_0.7Sc_0.3N ferroelectric gates</strong>
  Ferroelectric wurtzite AlScN has emerged as a non-oxide ferroelectric compatible with nitride and semiconductor device processing, but how epitaxial AlScN ferroelectric-gate thickness affects nonvolatile electrostatic modulation and reliability in two-dimensio…
  datacite Jong Yeog Son, Yoonho Ahn 2026 置信度 0.66 Physical sciences
• <strong>Gate-thickness-dependent nonvolatile modulation of monolayer MoS₂ channels by epitaxial Al_0.7Sc_0.3N ferroelectric gates</strong>
  Ferroelectric wurtzite AlScN has emerged as a non-oxide ferroelectric compatible with nitride and semiconductor device processing, but how epitaxial AlScN ferroelectric-gate thickness affects nonvolatile electrostatic modulation and reliability in two-dimensio…
  datacite Jong Yeog Son, Yoonho Ahn 2026 置信度 0.66 Physical sciences
• Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys
  Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful new mechanism for semiconductor alloy band engineering. Atom probe tomography r…
  datacite Liu, Shang, Liang, Yunfan, Eldose, Nirosh M., Chen, Shunda 等 2024 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciences
• Kerr nonlinearity and three-wave mixing in superconducting resonators hosting Al-InAs weak links
  Nonlinear microwave resonators are a versatile tool in quantum information processing, enabling parametric amplification, continuous variable quantum computing, and engineered mode interactions. Many of these applications especially benefit from cubic nonlinea…
  datacite Buccheri, Vittorio, Cools, Ivo P. C., Trnjanin, Nermin, Khola, Ankit 等 2026 置信度 0.66 Quantum Physics (quant-ph)FOS: Physical sciences
• Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots
  Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge stability diagrams through fully simulated gate-voltage sweeps is computationally…
  datacite Nodel, Ron, Kanaar, David W., Nasseraddin, Connor, Wilson, Tim J. 等 2026 置信度 0.66 Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum Physics (quant-ph)FOS: Physical sciences
• Polarization properties of semiconductor quantum dot and dash lasers
  Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures, each presenting a near-singular density of states. The QD size, shape, areal density and optical properties depend on growth parameters, such as growth temperatu…
  datacite Ridha, Philipp 2008 置信度 0.66 Heterostructure Semiconductor MaterialQuantum Dot (QD)/-Dash LaserSemiconductor Optical Amplifier (SOA)Polarization DependenceEdge-emitted Electroluminescence (EL)
• Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification
  This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formula…
  datacite Tung, Chien-Ting 2026 置信度 0.66 Applied Physics (physics.app-ph)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciences
• The Noble Forge: Identity Physics Formally Verified Coupling-Isolator Synthesis Mechanism for Localized B-Accumulation GAMCollider v15
  import Mathlib.Analysis.SpecialFunctions.Log.Basicimport Mathlib.Tactic /-!============================================================SNSFL_Noble_Forge_sac.lean============================================================ [9,9,3,1] :: {ANC} | Architect: HIGHTI…
  datacite Trent, Russell 2026 置信度 0.66