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• High visibility time-energy entangled photons from a silicon nanophotonic chip
  Advances in quantum photonics have shown that chip-scale quantum devices are translating from the realm of basic research to applied technologies. Recent developments in integrated photonic circuits and single photon detectors indicate that the bottleneck for …
  arxiv Steven Rogers, Daniel Mulkey, Xiyuan Lu, Wei C. Jiang 等 2016-05-20T21:13:43Z 置信度 0.78 quant-phphysics.optics
• Generation of correlated photons in hydrogenated amorphous-silicon waveguides
  We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorpho…
  arxiv S. Clemmen, A. Perret, S. K. Selvaraja, W. Bogaerts 等 2011-02-04T22:39:43Z 置信度 0.78 quant-phphysics.optics
• A silicon source of heralded single photons at 2 $μ$m
  Mid infrared integrated quantum photonics is a promising platform for applications in sensing and metrology. However, there are only few examples of on-chip single photon sources at these wavelengths. These have limited performances with respect to their C-ban…
  arxiv S. Signorini, M. Sanna, S. Piccione, M. Ghulinyan 等 2021-08-02T16:42:05Z 置信度 0.78 quant-phphysics.optics
• Interaction between light and highly confined hypersound in a silicon photonic nanowire
  In the past decade, there has been a surge in research at the boundary between photonics and phononics. Most efforts centered on coupling light to motion in a high-quality optical cavity, typically geared towards observing the quantum state of a mechanical osc…
  arxiv Raphaël Van Laer, Bart Kuyken, Dries Van Thourhout, Roel Baets 2014-07-18T13:00:56Z 置信度 0.78 physics.opticscond-mat.mes-hall
• Tungsten Germanide Superconducting Nanowire Single-Photon Detectors with Saturated Internal Detection Efficiency at Wavelengths up to 29 μm
  Superconducting nanowire single-photon detectors (SNSPDs) are among the most sensitive single-photon detectors available and have the potential to transform fields ranging from infrared astrophysics to molecular spectroscopy. However, extending their performan…
  arxiv Benedikt Hampel, Daniel Kuznesof, Andrew S. Mueller, Sahil R. Patel 等 2025-11-25T21:29:38Z 置信度 0.78 physics.ins-detcond-mat.supr-conphysics.app-phphysics.opticsquant-ph
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
  Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined.…
  arxiv Sridhar Majety, Victoria A. Norman, Liang Li, Miranda Bell 等 2020-12-04T01:01:30Z 置信度 0.78 physics.opticscond-mat.mes-hallquant-ph
• One-Dimensional Potassium Chains on Silicon Nanoribbons
  Silicon nanoribbons (SiNRs), characterized by a pentagonal structure composed of silicon atoms, host one-dimensional (1D) Dirac Fermions and serve as a minimalist atomic template for adsorbing various heteroatoms. Alkali-metal (AM) atoms, such as Na and K, wit…
  arxiv Tongtong Chen, Wenjia Zhang, Xiaobei Wan, Xiaohan Zhang 等 2025-04-01T01:53:03Z 置信度 0.78 cond-mat.mes-hall
• Electrical driving of X-band mechanical waves in a silicon photonic circuit
  Reducing energy dissipation is a central goal of classical and quantum technologies. Optics achieved great success in bringing down power consumption of long-distance communication links. With the rise of mobile, quantum and cloud technologies, it is essential…
  arxiv Raphaël Van Laer, Rishi N. Patel, Timothy P. McKenna, Jeremy D. Witmer 等 2018-05-31T16:47:55Z 置信度 0.78 physics.app-phcond-mat.mes-hallphysics.optics
• 1D self-healing beams in integrated silicon photonics
  Since the first experimental observation of optical Airy beams, various applications ranging from particle and cell micromanipulation to laser micromachining have exploited their non-diffracting and accelerating properties. The later discovery that Airy beams …
  arxiv Zhuoran Fang, Rui Chen, Albert Ryou, Arka Majumdar 2021-03-23T01:52:24Z 置信度 0.78 physics.optics
• Experimental realization of topologically-protected all-optical logic gates based on silicon photonic crystal slabs
  Topological photonics has been developed for more than ten years. It has been proved that the combination of topology and photons is very beneficial to the design of robust optical devices against some disturbances. However, most of the work for robust optical…
  arxiv Furong Zhang, Lu He, Huizhen Zhang, Ling-Jun Kong 等 2023-05-17T13:16:48Z 置信度 0.78 physics.opticsphysics.app-ph
• Approach to EUV Lithography Simulation
  crossref Atsushi Sekiguchi 2012-05-17T18:06:16Z 置信度 0.70
• EUV Source Technology: Challenges and Status
  crossref Vivek Bakshi 2010-11-09T18:48:49Z 置信度 0.70
• EUV Lithography
  crossref Burn J. Lin 2021-08-25T22:51:44Z 置信度 0.70
• EUV Mask and Mask Metrology
  crossref Han-Ku Cho, Jinho Ahn 2009-12-04T22:05:29Z 置信度 0.70
• Grazing-Incidence EUV Collectors
  crossref Piotr Marczuk, Wilhelm Egle 2010-11-09T23:48:49Z 置信度 0.70
• Collection Efficiency of EUV Sources
  crossref Günther Derra, Wolfgang Singer 2010-11-09T23:48:49Z 置信度 0.70
• Impact of asymmetrically localized and cascading secondary electron generation on stochastic defects in EUV lithography
  crossref Hiroshi Fukuda 2019-03-26T15:30:08Z 置信度 0.70
• Chemically-amplified backbone scission (CABS) resist for EUV lithography
  crossref Theodoros Manouras, Dimitrios Kazazis, Yasin Ekinci 2021-02-19T22:16:32Z 置信度 0.70
• Grazing Incidence Mirrors for EUV Lithography
  crossref Mariana Braic, Mihai Balaceanu, Viorel Braic 2012-03-23T19:39:19Z 置信度 0.70
• EUV Lithography Perspective: from the beginning to HVM (Conference Presentation)
  crossref Nelson M. Felix, David T. Attwood 2020-04-28T21:42:58Z 置信度 0.70
• Projection Systems for Extreme Ultraviolet Lithography
  crossref Russell Hudyma, Regina Soufli 2009-12-04T17:05:29Z 置信度 0.70
• Reference Data for the EUV Spectral Region
  crossref Eric Gullikson, David Attwood 2009-12-04T22:05:29Z 置信度 0.70
• Rigorous stochastic lithography modelling for defectivity reduction in EUV single expose patterning (Conference Presentation)
  crossref Ulrich Welling 2021-12-28T16:32:15Z 置信度 0.70
• Investigation of alternate mask absorbers in EUV lithography
  crossref Martin Burkhardt 2017-03-27T22:22:56Z 置信度 0.70
• Lithography performance of non-PFAS biomass EUV resist for high-NA EUV lithography
  crossref Kazuyo Morita 2025-11-06T21:59:35Z 置信度 0.70
• Lithography with Extreme-Ultraviolet Light
  crossref Andreas Erdmann 2021-02-23T20:16:35Z 置信度 0.70
• Image Formation in Projection Lithography
  crossref Andreas Erdmann 2021-02-23T20:17:22Z 置信度 0.70
• EUV Lithography, Second Edition
  crossref 2018-02-08T19:22:40Z 置信度 0.70
• Stochastic Effects in Advanced Lithography
  crossref Andreas Erdmann 2021-02-23T20:17:02Z 置信度 0.70
• Reflecting Multilayer Coatings for EUV Projection Lithography
  In the past 20 years, a very large effort has been devoted to the development of multilayer reflecting coatings for the x-ray and extreme ultraviolet (EUV) spectral regions. Out of this development arose the concept of EUV projection lithography, and multilaye…
  crossref James H. Underwood 2023-02-15T16:04:39Z 置信度 0.70
• EUV Masks
  crossref Harry J. Levinson 2020-11-09T23:59:51Z 置信度 0.70
• Reference Data for the EUV Spectral Region
  crossref David T. Attwood, Eric M. Gullikson 2018-02-09T00:22:40Z 置信度 0.70
• Resistless EUV lithography: patterning with EUV-induced surface reactions (Conference Presentation)
  crossref Li-Ting Tseng, Dimitrios Kazazis, Procopios Constantinou, Taylor Stock 等 2021-03-08T21:27:43Z 置信度 0.70
• Optical Lithography Beyond Projection Imaging
  crossref Andreas Erdmann 2021-02-23T20:16:46Z 置信度 0.70
• Important processes in modeling and optimization of EUV lithography sources
  crossref T. Sizyuk, A. Hassanein 2013-04-01T18:31:55Z 置信度 0.70
• A reverse design method for EUV lithography illumination system
  crossref Qiuli Mei, Yanqiu Li, Fei Liu 2013-04-01T18:31:55Z 置信度 0.70
• Discussion of Mask Alignment Accuracy for EUV Lithography
  The shorter lithography printing light source wavelength is, the more accurate alignment is required for resist printing of high packing density integrated circuits (ICs). As to longer wavelength light source than extremely ultraviolet, view systems of alignme…
  crossref Yasuyuki Saito 2023-02-15T15:37:28Z 置信度 0.70
• Advances in computer simulations of LPP sources for EUV lithography
  crossref A. Hassanein, T. Sizyuk 2013-04-01T18:31:55Z 置信度 0.70
• ASML EUV Pioneers Photo Montage
  crossref 2020-07-30T22:55:30Z 置信度 0.70
• Multilayer Facilities for EUV Lithography
  We describe the multilayer deposition system we have developed for coating large-area, figured optics, as required for a practical extreme-ultraviolet (EUV) lithography tool. In this system, multilayers are deposited by magnetron sputtering, and coating unifor…
  crossref D. L. Windt, W. K. Waskiewicz 2023-02-15T15:36:23Z 置信度 0.70
• EUV Sources for Lithography
  crossref 2010-11-09T23:48:49Z 置信度 0.70
• Optics Contamination
  crossref Saša Bajt 2009-12-04T17:05:29Z 置信度 0.70
• Recovery of EUV Lithography Substrates
  Mo/Si multilayers were removed from superpolished zerodur and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. Full recovery o…
  crossref S. P. Vernon, S. L. Baker 2023-02-15T15:37:26Z 置信度 0.70
• Impact of EUV mask roughness on lithography performance
  crossref Yukiyasu Arisawa, Tsuneo Terasawa, Hidehiro Watanabe 2013-04-01T22:31:55Z 置信度 0.70
• Evaluation of rinse material and process for EUV lithography
  crossref Kazuma Yamamoto, Toshiro Itani 2015-04-07T01:34:19Z 置信度 0.70
• Progress in EUV resists towards high-NA EUV lithography
  crossref Xiaolong Wang, Zuhal Tasdemir, Iacopo Mochi, Michaela Vockenhuber 等 2019-03-14T17:13:36Z 置信度 0.70
• Imaging enhancement (low k1 imaging) in EUV lithography: current status and future resolution enhancement techniques
  crossref Jo Finders, Christian Wagner 2021-02-19T22:08:37Z 置信度 0.70
• Patterning Fidelity Enhancement and Aberration Mitigation in EUV Lithography Through Source-Mask Optimization.
  europepmc 2025 置信度 0.80
• Pt-W alloy absorbers for high-NA EUV lithography: tunable optical and etching performance.
  europepmc 2025 置信度 0.80
• Study on Next-Generation EUV Lithography Technology: Hyper NA, the Highest Potential for Practical Implementation.
  europepmc 2025 置信度 0.80
• A combined experimental and theoretical study on electron induced fragmentation of methyl acetate, a model compound for side chain fragmentation and decarboxylation as pathways to main chain scission of polymethyl methacrylate as EUV lithography resist material.
  europepmc 2026 置信度 0.80
• Development and optimization of metal silicide EUV pellicle for 400W EUV lithography.
  Abstract In the extreme ultraviolet lithography (EUVL) process, extreme ultraviolet (EUV) pellicles serve as thin, transparent membranes that shield the photomask (reticle) from particle contamination, thereby preserving photomask pattern integrity, reducing c…
  europepmc Munsu Choi, Chulkyun Park, Juhee Hong 2024 置信度 0.80
• Mask structure optimization for beyond EUV lithography.
  europepmc 2024 置信度 0.80
• Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography.
  europepmc 2024 置信度 0.80
• Design of a high transmission illumination optics for anamorphic EUV lithography optics using deep reinforcement learning.
  europepmc 2025 置信度 0.80
• SCAPSM: attenuated phase-shift mask structure for EUV lithography.
  europepmc 2024 置信度 0.80
• Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography.
  europepmc 2025 置信度 0.80
• Metal-Core-Specific Screening with Machine Learning: Accelerating the Discovery of Metal Oxide Clusters for Enhanced EUV Lithography Resolution.
  europepmc 2025 置信度 0.80
• Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography.
  europepmc 2024 置信度 0.80
• Resistless EUV lithography: Photon-induced oxide patterning on silicon.
  europepmc 2023 置信度 0.80
• A study of hydrogen plasma-induced charging effect in EUV lithography systems.
  europepmc 2023 置信度 0.80
• Aberration budget analysis of EUV lithography from the imaging performance of a contact layer in a 5  nm technology node.
  europepmc 2023 置信度 0.80
• Investigation of the Resistivity and Emissivity of a Pellicle Membrane for EUV Lithography.
  europepmc 2022 置信度 0.80
• A synchrotron-based kilowatt-level radiation source for EUV lithography.
  europepmc 2022 置信度 0.80
• Fast aerial image model for EUV lithography using the adjoint fully convolutional network.
  europepmc 2022 置信度 0.80
• Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm.
  europepmc 2021 置信度 0.80
• Demonstration of a ring-FEL as an EUV lithography tool.
  europepmc 2020 置信度 0.80
• Electron-induced fragmentation mechanisms in organic monomers and their implications for photoresist optimization for EUV lithography.
  europepmc 2021 置信度 0.80
• Fast heuristic-based source mask optimization for EUV lithography using dual edge evolution and partial sampling.
  europepmc 2021 置信度 0.80
• High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results.
  The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithograp…
  europepmc Theodore Manouras, Panagiotis Argitis 2020 置信度 0.80
• Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography.
  europepmc 2020 置信度 0.80
• Atomically Precise Ti-Zr Heterometallic Oxo Clusters for High-Sensitivity and High-Resolution Single-Component Extreme Ultraviolet Photoresists.
  europepmc 2026 置信度 0.80
• Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography.
  europepmc 2026 置信度 0.80
• Mechanisms of Film-Formation-Related Defects in EUV Photoresists for Sub-3 nm Nodes and Synergistic Materials-Process-Intelligence Co-Optimization.
  europepmc 2026 置信度 0.80
• EUV mask modeling based on a wide-angle full-vector beam propagation method.
  europepmc 2026 置信度 0.80
• Synthesis, Characterization, and Electron-Beam Lithography of Tetakis(Triphenylstannyl) Orthosilicate and Tetrakis(Triacetoxystannyl) Orthosilicate for the Development of Inorganic Molecular EUV Resists.
  europepmc 2026 置信度 0.80
• Three-Dimensional Nanopatterning Using Extreme Ultraviolet Colloidal Talbot Lithography.
  europepmc 2026 置信度 0.80
• High-reflection Mo/Be/Si multilayers for EUV lithography.
  The effect of Be layers on the reflection coefficients of Mo/Be/Si multilayer mirrors in the extreme ultraviolet (EUV) region is reported. Samples were studied using laboratory and synchrotron based reflectometry, and high-resolution transmission electron micr…
  pubmed Chkhalo NI, Gusev SA, Nechay AN, Pariev DE 等 2017 置信度 0.82
• Co-optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography.
  Extreme ultraviolet lithography is regarded as the most attractive technology to achieve 7 nm node and below. A new high-numerical-aperture anamorphic objective lens is designed to extend the single exposure resolution limit. However, the polarization aberrati…
  pubmed Sheng N, Sun Y, Li E, Li T 等 2019 置信度 0.82
• Influence of barrier interlayers on the performance of Mo/Be multilayer mirrors for next-generation EUV lithography.
  A comparative study was carried out of the structure and reflection performance of four types of multilayer mirror for extreme ultraviolet lithography at 11.2 nm; these were a pure Mo/Be structure and three Mo/Be-based structures with thin B 4 C, C and Si inte…
  pubmed Svechnikov MV, Chkhalo NI, Gusev SA, Nechay AN 等 2018 置信度 0.82
• Advancing EUV Patterning: Innovations in Resist Platforms, Patterning Strategies, and Computational Approaches.
  europepmc 2026 置信度 0.80
• Data-driven elemental descriptors for rational design of high-sensitivity extreme ultraviolet photoresists.
  europepmc 2026 置信度 0.80
• Driver wavelength and intensity dependence of extreme ultraviolet emission from laser-produced tin microdroplet plasmas.
  europepmc 2026 置信度 0.80
• Dielectric Modulation of Ionization Energetics in Organotin Extreme Ultraviolet Photoresists.
  europepmc 2026 置信度 0.80
• Enhancement of the two-dimensional corner sharpness in extreme ultraviolet lithography with rigorous imaging analysis.
  europepmc 2026 置信度 0.80
• An Integrated Multimethod Simulation Framework for Tin Debris Control in Extreme Ultraviolet Lithography.
  europepmc 2026 置信度 0.80
• Adaptive reinforcement learning for lithography optimization: a scalable AI-driven solution for next-generation semiconductor manufacturing.
  europepmc 2026 置信度 0.80
• Inverse Lithography Technology (ILT) Under Chip Manufacture Context.
  europepmc 2026 置信度 0.80
• Mechanism of Vapor-Phase Infiltration of Organometallic Hf in Poly(Methyl Methacrylate) for Hybrid Resist Applications.
  europepmc 2026 置信度 0.80
• Vacuum-processed hybrid resists for advanced lithography: molecular layer deposition and sequential infiltration synthesis.
  europepmc 2026 置信度 0.80
• TiO<sub>2</sub> protective capping for EUV mirrors: superior hydrogen plasma resistance and Sn contaminants removal.
  europepmc 2026 置信度 0.80
• Transmission Electron Microscopy Unraveled Ionic Oxygen-Affinity Engineering of Metal Oxo Clusters with Extreme Ultraviolet Lithography Activity.
  europepmc 2026 置信度 0.80
• Revisiting the Role of Carboxylates in Dialkyltin Dicarboxylate EUV Resists: Evidence for Electron-Induced Decarboxylation.
  europepmc 2026 置信度 0.80
• Extended coupled-wave method for the light absorption of an EUV grid mask.
  europepmc 2026 置信度 0.80
• High-efficiency EUV mask defect compensation method based on the pixelated absorber layer correction.
  europepmc 2025 置信度 0.80
• Positive Role of Iodine Atoms in Chemically Amplified Photoresists for Extreme Ultraviolet Lithography.
  europepmc 2025 置信度 0.80
• Novel hexameric tin carboxylate clusters as efficient negative-tone EUV photoresists: high resolution with well-defined patterns under low energy doses.
  europepmc 2023 置信度 0.80
• Impact of Phase Defects on the Aerial Image in High NA Extreme Ultraviolet Lithography.
  europepmc 2025 置信度 0.80
• Wafer alignment measurement in lithography systems based on vortex beam interference.
  europepmc 2025 置信度 0.80
• Beyond EUV lithography: a comparative study of efficient photoresists' performance.
  Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyon…
  pubmed Mojarad N, Gobrecht J, Ekinci Y 2015 置信度 0.82