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• Theoretical Investigation on Lithographic Properties of Zinc-Oxo and Cadmium-Oxo Clusters Ligated with Differently Substituted Benzoic Acids.
  europepmc 2026 置信度 0.80
• Norbornene and Epoxide-Substituted Silsesquioxane Photoresists with High-Sensitivity and Stability.
  europepmc 2025 置信度 0.80
• Effect of Networking Density on the Patterning Performance of Molecular Layer Deposited Alucone Electron Beam/EUV Resists.
  europepmc 2025 置信度 0.80
• Multiscale measurement for infrared suppression ratio of SPFs-integrated EUV collectors by a weighted harmonic mean integral.
  europepmc 2026 置信度 0.80
• Dry development in lithography: Molecular design and chemical strategies.
  europepmc 2026 置信度 0.80
• Hole-Patterned Pellicles: A Structural Approach for Improved Extreme Ultraviolet Transmittance and Mechanical Behavior.
  europepmc 2025 置信度 0.80
• Polytelluoxane as the ideal formulation for EUV photoresist.
  europepmc 2025 置信度 0.80
• Examining the Molecular Composition of Sub-10-nm Domains With Nano-Projectile Secondary Ion Mass Spectrometry.
  europepmc 2026 置信度 0.80
• Thermal Control Systems in Projection Lithography Tools: A Comprehensive Review.
  europepmc 2025 置信度 0.80
• Crystalline Phase-Dependent Emissivity of MoSi<sub>2</sub> Nanomembranes for Extreme Ultraviolet Pellicle Applications.
  europepmc 2025 置信度 0.80
• Ligand Regulation and Mechanism Study of Organotin Carboxylate Resists in DUV Lithography.
  europepmc 2026 置信度 0.80
• Tuning Aluminum Precursors for Area-Selective Infiltration into Polymers for High-Precision Pattern Transfer.
  Over recent decades, the semiconductor industry has made remarkable progress in achieving nanoscale device dimensions, yet continuous downscaling remains challenging due to limitations in resist performance and patterning precision. Although extreme ultraviole…
  pubmed Harake M, Lee Y, Yu B, D'Acunto G 等 2026 置信度 0.82
• Ligand Functionality-Dependent Performance of Organotin Carboxylate Resists.
  europepmc 2025 置信度 0.80
• Atomically Precise Interfacial Engineering on Tin-Silicon Oxo Clusters for Sub-8 nm Lithography.
  europepmc 2026 置信度 0.80
• Ultrathin aluminum layer-based DUV transparent thermal protection optical window.
  europepmc 2025 置信度 0.80
• Resolving In Situ Exposure Dynamics in a Chemically Amplified EUV Photoresist Using Table-Top EUV Photoemission Spectroscopy.
  europepmc 2025 置信度 0.80
• Integrated Strategies for Overcoming Resolution Limits in Electron Beam Lithography of Chemically Amplified Resists.
  europepmc 2026 置信度 0.80
• (TMT)_n clusters as dilute debris-free tin source for generation of multiply charged tin ions-of relevance in extreme ultraviolet (EUV) lithography, under intense laser irradiation.
  Multiply charged tin ions ([Sn] 8+ to [Sn] 13+ ) are considered as ideal-emitters at extreme ultraviolet (EUV) wavelength ~ 13.5 nm, pertinent to advanced micro-electronic device fabrication. Solid tin targets have been widely explored for the generation of th…
  pubmed Sharma P, Das S, Vatsa RK 2018 置信度 0.82
• Positive and Negative Dual-Type Hafnium-Based Hybrid Dry Photoresist for Nanolithography.
  europepmc 2026 置信度 0.80
• Unraveling the relative impact of material and optical stochastic effects on EUV LWR.
  europepmc 2025 置信度 0.80
• Molecular nonchemically amplified resists based on spirobixanthene backbone: Sulfoxime oxime esters versus sulfonium salts.
  europepmc 2026 置信度 0.80
• The Evolution of Lithography: From Resolution Scaling to Manufacturing Constraints.
  europepmc 2026 置信度 0.80
• Detection and Characterization of Plasma-Generated Stannane: Influence of Surface Composition on Species Formation.
  europepmc 2026 置信度 0.80
• Invited Article: High-quality blazed gratings through synergy between e-beam lithography and robust characterization techniques.
  europepmc 2025 置信度 0.80
• Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography.
  europepmc 2025 置信度 0.80
• Advancements and challenges in inverse lithography technology: a review of artificial intelligence-based approaches.
  Inverse lithography technology (ILT) is a promising approach in computational lithography to address the challenges posed by shrinking semiconductor device dimensions. The ILT leverages optimization algorithms to generate mask patterns, outperforming tradition…
  pubmed Yang Y, Liu K, Gao Y, Wang C 等 2025 置信度 0.82
• Construction of Atomically Thin Boron Films on Si Heterojunctions Using a First Principles Approach.
  europepmc 2026 置信度 0.80
• Design method for wafer alignment marks with low alignment position deviation under process-induced asymmetry.
  europepmc 2025 置信度 0.80
• Trinuclear Tin Complexes for Advanced Lithography: Sensitivity Enhancement via the Synergistic Effect in Dual Cross-Linking Systems.
  europepmc 2025 置信度 0.80
• Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication.
  Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lit…
  pubmed Basu P, Verma J, Abhinav V, Ratnesh RK 等 2025 置信度 0.82
• DFT Study on CO<sub>2</sub>- and H<sub>2</sub>O-Enhanced Solubility Contrast in Tin-Oxo Cage Photoresists.
  europepmc 2025 置信度 0.80
• Modeling and evaluation for the infrared suppression ratio of an EUV collector with integrated spectral purity filters.
  europepmc 2025 置信度 0.80
• Review of Directed Self-Assembly Material, Processing, and Application in Advanced Lithography and Patterning.
  europepmc 2025 置信度 0.80
• Composition-dependent properties of ultra-thin MoSi<i><sub>x</sub></i>based extreme ultraviolet pellicle.
  europepmc 2025 置信度 0.80
• Aberration model in extreme ultraviolet lithography for device reliability.
  europepmc 2025 置信度 0.80
• <i>In Situ</i> Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic-Organic Hybrid Thin Films for EUV Resist Platform.
  europepmc 2025 置信度 0.80
• Versatile Reactive Gradient Block Copolymer System for Highly Robust Nanopatterns With Spontaneous Vertical Orientation.
  europepmc 2026 置信度 0.80
• Structural and thermal stability of B<sub>4</sub>C/Ru multilayers with carbon barrier layers.
  europepmc 2026 置信度 0.80
• Grouping design of eight-mirror projection objective for high-numerical aperture EUV lithography.
  A grouping design method for all-sphere initial design of an eight-mirror projection objective is proposed for extreme ultraviolet lithography (EUVL). By separating the eight-mirror objective into three mirror groups (the object side group, the image side grou…
  pubmed Liu F, Li Y 2013 置信度 0.82
• Pathways to high-performance extreme ultra-violet lithography resists: Dissociative electron attachment to pentafluoro-phenyl triflate.
  europepmc 2025 置信度 0.80
• A highly hydroxylated 6-tin oxide cluster serves as an efficient e-beam and EUV-photoresist to achieve high-resolution patterns.
  europepmc 2025 置信度 0.80
• Mechanistic Insights into Acid Generation from Nonionic Photoacid Generators for Extreme Ultraviolet and Electron Beam Lithography.
  europepmc 2025 置信度 0.80
• Holographic EUV Lithography at 40 nm Resolution
  Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale research and prototypi…
  arxiv Ziqi Li, Iason Giannopoulos, Lisong Dong, Dimitrios Kazazis 等 2026-05-20T17:23:22Z 置信度 0.78 physics.optics
• Resistless EUV lithography: photon-induced oxide patterning on silicon
  In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and t…
  arxiv Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis, Procopios C. Constantinou 等 2023-10-02T15:12:40Z 置信度 0.78 physics.app-phcond-mat.mtrl-sci
• Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis
  Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A prerequisite …
  arxiv J. Pomplun, S. Burger, F. Schmidt, F. Scholze 等 2010-11-11T14:18:50Z 置信度 0.78 physics.opticsphysics.comp-ph
• EUVE Observations of Nonmagnetic Cataclysmic Variables
  We summarize EUVE's contribution to the study of the boundary layer emission of high accretion-rate nonmagnetic cataclysmic variables, especially the dwarf novae SS Cyg, U Gem, VW Hyi, and OY Car in outburst. We discuss the optical and EUV light curves of dwar…
  arxiv Christopher W. Mauche 2001-09-07T23:50:07Z 置信度 0.78 astro-ph
• Multi-Diagnostic Characterization of Laser-Produced Tin Plasmas for EUV Lithography
  We present a comprehensive characterization of laser-produced tin (Sn) plasmas relevant to extreme ultraviolet (EUV) lithography using a multi-diagnostic suite integrated into the new experimental platform, "SparkLight". Tin plasmas are generated by irradiatin…
  arxiv Stanislav Musikhin, Anatoli Morozov, Alec Griffith, Shurik Yatom 等 2026-02-03T14:35:05Z 置信度 0.78 physics.plasm-ph
• Design of an all-facet illuminator for high NA EUV lithography exposure tool based on deep reinforcement learning
  Using the illuminator for high numerical aperture (NA) extreme ultraviolet (EUV) exposure tool in EUV lithography can lead to support volume production of sub-2 nm logic nodes and leading-edge DRAM nodes. However, the typical design method of the illuminator h…
  arxiv Tong Li, Yuqing Chen, Yanqiu Li, Lihui Liu 2025-06-18T15:33:22Z 置信度 0.78 physics.optics
• High-NA In-Line Projector for EUV Lithography
  This paper proposes a simple, four-mirror, in-line projector for high-NA EUV lithography that eliminates the most troublesome mask 3D effect. The design consists of a two-stage concave-convex pair, where optical aberrations are cancelled within each stage and …
  arxiv Tsumoru Shintake 2025-08-01T08:42:33Z 置信度 0.78 physics.optics
• Grazing incidence interaction of Sn particles with EUV Lithography ruthenium mirrors
  The new EUV Lithography tools for IC High Volume Manufacture at 22nm make use of EUV radiation at λ= 13.5nm. High power Laser (LPP) and Discharge (DPP)EUV light sources are based on Sn plasmas for the optimum conversion of electrical power to in-band radiation…
  arxiv Valentino Rigato 2010-03-19T10:49:59Z 置信度 0.78 cond-mat.mtrl-sci
• Proposal of Plane-Parallel Resonator Configuration for High-NA EUV Lithography
  Plane-parallel resonator configuration is proposed for high-NA EUV lithography, where the lithography mask and the wafer are parallelly arranged through two focusing mirrors. EUV light is injected through an off-axis rotating mirror at the back focal plane and…
  arxiv Tsumoru Shintake 2022-01-18T05:26:05Z 置信度 0.78 physics.opticsphysics.app-ph
• Pseudo-spectral frequency-domain method with background field decomposition and Green's function preconditioner for electromagnetic scattering problem in EUV lithography
  We provide an accelerated computational framework to solve electromagnetic scattering problems in planarly layered media arising from extreme ultraviolet (EUV) lithography. To achieve this, we reformulate the EUV scattering problem into a scattering problem on…
  arxiv Seungjin Lee, Werner Gillijns, Doyun Kim 2026-06-24T08:18:32Z 置信度 0.78 physics.opticsphysics.comp-ph
• Neural Lithography: Close the Design-to-Manufacturing Gap in Computational Optics with a 'Real2Sim' Learned Photolithography Simulator
  We introduce neural lithography to address the 'design-to-manufacturing' gap in computational optics. Computational optics with large design degrees of freedom enable advanced functionalities and performance beyond traditional optics. However, the existing des…
  arxiv Cheng Zheng, Guangyuan Zhao, Peter T. C. So 2023-09-29T15:50:26Z 置信度 0.78 physics.opticscs.AIcs.CVcs.GR
• Gradient-based inverse lithography for EUV masks via the waveguide method and a physics-informed neural operator
  Gradient-based inverse lithography technology~(ILT) for extreme ultraviolet~(EUV) masks is presented. A novel framework treats the differentiable waveguide method and the recently proposed waveguide neural operator~(WGNO) as end-to-end physics engines, recover…
  arxiv Vasiliy A. Es'kin, Egor V. Ivanov 2026-06-24T12:22:48Z 置信度 0.78 cs.LGcs.AImath.OCphysics.comp-phphysics.optics
• Extreme Ultraviolet (EUV) Sources for Lithography based on Synchrotron Radiation
  The study presented here was initiated by a discussion to investigate the possibility of using synchrotron radiation as a source for the Next Generation Lithography (NGL) based on the EUV-concept (Extreme Ultra-Violet; here 13.5 nm or 11.3 nm radiation, respec…
  arxiv G. Dattoli, A. Doria, G. P. Gallerano, L. Giannessi 等 2001-03-19T18:58:01Z 置信度 0.78 physics.acc-ph
• Physics-informed neural networks and neural operators for a study of EUV electromagnetic wave diffraction from a lithography mask
  Physics-informed neural networks (PINNs) and neural operators (NOs) for solving the problem of diffraction of Extreme Ultraviolet (EUV) electromagnetic waves from a mask are presented. A novel hybrid Waveguide Neural Operator (WGNO) is introduced, which is bas…
  arxiv Vasiliy A. Es'kin, Egor V. Ivanov 2025-07-05T20:21:31Z 置信度 0.78 math.NAcs.AIcs.LGphysics.comp-phphysics.optics
• Physics-Informed Neural Systems for the Simulation of EUV Electromagnetic Wave Diffraction from a Lithography Mask
  Physics-informed neural networks (PINNs) and neural operators (NOs) for solving the problem of diffraction of Extreme Ultraviolet (EUV) electromagnetic waves from contemporary lithography masks are presented. A novel hybrid Waveguide Neural Operator (WGNO) is …
  arxiv Vasiliy A. Es'kin, Egor V. Ivanov 2026-03-16T17:46:15Z 置信度 0.78 cs.LGcs.AIphysics.app-phphysics.comp-phphysics.optics
• Extreme ultraviolet lithography reaches 5 nm resolution
  Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto…
  arxiv Iason Giannopoulos, Iacopo Mochi, Michaela Vockenhuber, Yasin Ekinci 等 2024-02-28T10:59:10Z 置信度 0.78 physics.opticsphysics.app-ph
• The refined EUV mask model
  A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithogra…
  arxiv I. A. Makhotkin, M. Wu, V. Soltwisch, F. Scholze 等 2019-12-19T09:05:03Z 置信度 0.78 physics.app-phcond-mat.mtrl-sci
• Plasma-assisted Discharges and Charging in EUV-induced Plasma
  In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is transmitted through a near-vac…
  arxiv Mark van de Kerkhof, Andrei M. Yakunin, Vladimir Kvon, Selwyn Cats 等 2020-12-05T13:14:11Z 置信度 0.78 physics.plasm-phphysics.app-ph
• Nanometer resolution mask lithography with matter waves: Near-field binary holography
  Mask-based pattern generation is a crucial step in microchip production. The next-generation extreme-ultraviolet- (EUV) lithography instruments with a wavelength of \SI{13.5}{\nano\meter} is currently under development. In principle, this should allow patterni…
  arxiv Torstein Nesse, Ingve Simonsen, Bodil Holst 2018-03-30T16:45:00Z 置信度 0.78 physics.app-phphysics.optics
• Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach
  Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results in ionization driven…
  arxiv Laura Galleni, Dhirendra P. Singh, Thierry Conard, Geoffrey Pourtois 等 2025-05-12T08:36:16Z 置信度 0.78 cond-mat.mtrl-sci
• Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations
  EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and num…
  arxiv S. Burger, L. Zschiedrich, J. Pomplun, F. Schmidt 等 2011-10-21T11:36:07Z 置信度 0.78 physics.opticsphysics.comp-ph
• Scaling a CUDA-Q GQE + QSCI pipeline to 40 qubits for EUV photoresist chemistry
  We scale a CUDA-Q-native pipeline coupling a generative quantum eigensolver (GQE) to quantum-selected configuration interaction (QSCI) across active spaces of 14 to 44 qubits, applied to the extreme-ultraviolet (EUV) photoresist chemistry of monoalkyltin oxo-h…
  arxiv Karim Elgammal, Marc Maußner 2026-07-27T04:33:04Z 置信度 0.78 quant-phphysics.chem-ph
• Particle charging during pulsed EUV exposures with afterglow effect
  The nanoparticle charging processes along with background spatial-temporal plasma profile have been investigated with 3DPIC simulation in a pulsed EUV exposure environment. It is found that the particle charge polarity (positive or negative) strongly depends o…
  arxiv M. Chaudhuri, L. C. J. Heijmans, M. van de Kerkhof, P. Krainov 等 2023-03-26T11:22:45Z 置信度 0.78 physics.plasm-ph
• Dissociative photoionization of EUV lithography photoresist models
  The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV) synchrotron radiation at …
  arxiv Marziogiuseppe Gentile, Marius Gerlach, Robert Richter, Michiel J. van Setten 等 2024-11-15T13:25:46Z 置信度 0.78 cond-mat.mtrl-sciphysics.chem-ph
• Three-dimensional nanoimprint lithography using two-photon lithography master samples
  We demonstrate three-dimensional (3-D) nanoimprint lithography using master samples initially structured by two-photon lithography. Complex geometries like micro prisms, micro parabolic concentrators, micro lenses and other micrometer sized objects with nanosc…
  arxiv Rebecca Saive, Colton R. Bukowsky, Harry A. Atwater 2017-02-13T22:58:52Z 置信度 0.78 cond-mat.mes-hallphysics.optics
• EUV-induced Hydrogen Plasma : Pulsed Mode Operation and Confinement in Scanner
  In the past years, EUV lithography scanner systems have entered High-Volume Manufacturing for state-of-the-art Integrated Circuits (IC), with critical dimensions down to 10 nm. This technology uses 13.5 nm EUV radiation, which is shaped and transmitted through…
  arxiv Mark van de Kerkhof, Andrei M. Yakunin, Dmitry Astakhov, Maarten van Kampen 等 2021-05-20T20:46:56Z 置信度 0.78 physics.plasm-ph
• Optimization of EUV output by experimentally validated radiation-hydrodynamic simulations across a broad laser parameter space
  Practical requirements such as improving wall-plug efficiency and reducing system footprint have become increasingly important with the introduction of extreme ultraviolet (EUV) lithography into high-volume semiconductor manufacturing. These demands motivate t…
  arxiv Nozomi Tanaka, Yu Yamamoto, Akira Sasaki, Katsunobu Nishihara 等 2026-06-04T09:48:31Z 置信度 0.78 physics.plasm-ph
• Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
  Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and hi…
  arxiv Roberto Fallica, Dimitrios Kazazis, Robert Kirchner, Anja Voigt 等 2017-10-24T12:26:13Z 置信度 0.78 physics.app-phcond-mat.mtrl-sci
• Applying Droplets and Films in Evaporative Lithography
  This review covers experimental results of evaporative lithography and analyzes existing mathematical models of this method. Evaporating droplets and films are used in different fields, such as cooling of heated surfaces of electronic devices, diagnostics in h…
  arxiv Konstantin Kolegov, Lev Barash 2020-05-14T17:11:22Z 置信度 0.78 physics.app-phcond-mat.soft
• Can we improve the energy efficiency of EUV lithography?
  This paper discusses a simple, low-cost, highly efficient two-mirror projector with a simplified illumination system. The EUV source power can be reduced by 1/10 compared to the current six-mirror EUV projector system. The required EUV power is 20 watts for pr…
  arxiv Tsumoru Shintake 2024-05-20T01:37:08Z 置信度 0.78 physics.opticsphysics.app-ph
• Open-Source Differentiable Lithography Imaging Framework
  The rapid evolution of the electronics industry, driven by Moore's law and the proliferation of integrated circuits, has led to significant advancements in modern society, including the Internet, wireless communication, and artificial intelligence (AI). Centra…
  arxiv Guojin Chen, Hao Geng, Bei Yu, David Z. Pan 2024-09-05T01:19:45Z 置信度 0.78 physics.app-phcs.ET
• SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
  The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the …
  arxiv Thomas Van Caekenberghe, Paul Steinacker, Bart Raes, Sofie Beyne 等 2026-07-14T17:13:24Z 置信度 0.78 cond-mat.mes-hallquant-ph
• 'EUV Waves' are Waves: First Quadrature Observations of an EUV Wave from STEREO
  The nature of CME-associated low corona propagating disturbances, 'EUV waves', has been controversial since their discovery by EIT on \textit{SOHO}. The low cadence, single viewpoint EUV images and the lack of simultaneous inner corona white light observations…
  arxiv S. Patsourakos, A. Vourlidas 2009-05-13T18:52:38Z 置信度 0.78 astro-ph.SR
• On the efficiency of quantum lithography
  Quantum lithography promises, in principle, unlimited feature resolution, independent of wavelength. However, in the literature at least two different theoretical descriptions of quantum lithography exist. They differ in to which extent they predict that the p…
  arxiv Christian Kothe, Gunnar Björk, Shuichiro Inoue, Mohamed Bourennane 2010-06-11T10:18:09Z 置信度 0.78 quant-ph
• Which solar EUV indices are best for reconstructing the solar EUV irradiance ?
  The solar EUV irradiance is of key importance for space weather. Most of the time, however, surrogate quantities such as EUV indices have to be used by lack of continuous and spectrally resolved measurements of the irradiance. The ability of such proxies to re…
  arxiv T. Dudok de Wit, M. Kretzschmar, J. Aboudarham, P. -O. Amblard 等 2007-02-02T10:12:24Z 置信度 0.78 astro-ph
• Advanced scanning probe lithography
  The nanoscale control afforded by scanning probe microscopes has prompted the development of a wide variety of scanning probe-based patterning methods. Some of these methods have demonstrated a high degree of robustness and patterning capabilities that are unm…
  arxiv Ricardo Garcia, Armin W. Knoll, Elisa Riedo 2015-05-06T06:37:30Z 置信度 0.78 cond-mat.mtrl-sci
• Layout Decomposition for Quadruple Patterning Lithography and Beyond
  For next-generation technology nodes, multiple patterning lithography (MPL) has emerged as a key solution, e.g., triple patterning lithography (TPL) for 14/11nm, and quadruple patterning lithography (QPL) for sub-10nm. In this paper, we propose a generic and r…
  arxiv Bei Yu, David Z. Pan 2014-03-31T17:58:40Z 置信度 0.78 cs.DS
• An Automated System for Checking Lithography Friendliness of Standard Cells
  At advanced process nodes, lithography weakpoints can exist in physical layouts of integrated circuit designs even if the layouts pass design rule checking (DRC). Existence of lithography weakpoints in a physical layout can cause manufacturability issues, whic…
  arxiv I-Lun Tseng, Yongfu Li, Valerio Perez, Vikas Tripathi 等 2018-10-02T18:29:05Z 置信度 0.78 cs.OH
• UV and EUV Instruments
  We describe telescopes and instruments that were developed and used for astronomical research in the ultraviolet (UV) and extreme ultraviolet (EUV) regions of the electromagnetic spectrum. The wavelength ranges covered by these bands are not uniquely defined. …
  arxiv K. Werner 2010-01-02T11:03:51Z 置信度 0.78 astro-ph.IM
• Polarization manipulation holographic lithography by single refracting prism
  We propose a simple but effective strategy for polarization manipulation holographic lithography by single refractive prism. By tuning the polarization of single laser beam, we simply obtain a pill shape interference pattern where multiple modulated beams are …
  arxiv Yi Xu, Man Wu, Xiuming Lan, Xiaoxu Lu 等 2011-11-21T13:10:37Z 置信度 0.78 physics.optics
• Quantum lithography, entanglement and Heisenberg-limited parameter estimation
  We explore the intimate relationship between quantum lithography, Heisenberg-limited parameter estimation and the rate of dynamical evolution of quantum states. We show how both the enhanced accuracy in measurements and the increased resolution in quantum lith…
  arxiv Pieter Kok, Samuel L. Braunstein, Jonathan P. Dowling 2004-02-12T11:23:50Z 置信度 0.78 quant-ph
• Quantum Lithography in Macroscopic Observations
  We study the generalized Young's double-slit interference for the beam produced in the spontaneously parametric down-conversion (SPDC). We find that the sub-wavelength lithography can occur macroscopically in both the two-photon intensity measurement and the s…
  arxiv De-Zhong Cao, Kaige Wang 2003-10-07T11:04:17Z 置信度 0.78 quant-ph
• Analysis of Lithography Based Approaches In development of Semi Conductors
  The end of the 19th century brought about a change in the dynamics of computing by the development of the microprocessor. Huge bedroom size computers began being replaced by portable, smaller sized desktops. Today the world is dominated by silicon, which has c…
  arxiv Jatin Chopra 2015-02-20T14:45:10Z 置信度 0.78 cs.OH
• A reanalysis of EUV emission in clusters of galaxies
  We report a new analysis of diffuse EUV emission in clusters of galaxies. We find the cluster emission is strongly influenced by the variation of the telescope sensitivity over the field of view and upon the details of the subtraction of the EUV emission for t…
  arxiv Stuart Bowyer, Thomas W. Berghoefer, Eric Korpela 1999-07-09T18:36:38Z 置信度 0.78 astro-ph
• EUV observations of cool dwarf stars
  The EUV (100-912 Å) is a spectral region notoriously difficult to observe due to attenuation by neutral hydrogen gas in the interstellar medium. Despite this, hundreds to thousands of nearby stars of different spectral types and magnetic activity levels are ac…
  arxiv Allison Youngblood, Jeremy Drake, James Mason, Rachel Osten 等 2019-03-13T21:20:15Z 置信度 0.78 astro-ph.SR
• Discharge-produced plasma extreme ultraviolet (EUV) source and ultra high vacuum chamber for studying EUV-induced processes
  An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection …
  arxiv A Dolgov, O Yakushev, A Abrikosov, E Snegirev 等 2014-11-17T15:04:52Z 置信度 0.78 physics.plasm-phphysics.ins-det
• Coronal Shock Waves, EUV Waves, and Their Relation to CMEs. III. Shock-Associated CME/EUV Wave in an Event with a Two-Component EUV Transient
  On 17 January 2010, STEREO-B observed in extreme ultraviolet (EUV) and white light a large-scale dome-shaped expanding coronal transient with perfectly connected off-limb and on-disk signatures. Veronig et al. (2010, ApJL 716, 57) concluded that the dome was f…
  arxiv V. V. Grechnev, A. N. Afanasyev, A. M. Uralov, I. M. Chertok 等 2011-04-18T03:20:51Z 置信度 0.78 astro-ph.SR
• Spatial distributions of EUV brightenings in the quiet-Sun
  The identification of large numbers of localised transient EUV brightenings, with small spatial scales, in the quiet-Sun corona has been one of the key early results from Solar Orbiter. However, much is still unknown about these events. Here, we aim to better …
  arxiv C. J. Nelson, L. A. Hayes, D. Müller, S. Musset 等 2024-11-01T09:29:54Z 置信度 0.78 astro-ph.SR
• Cavity-based compact light source for extreme ultraviolet lithography
  A critical technology for high-volume manufacturing of nanoscale integrated circuits is a high-power extreme ultraviolet (EUV) light source. Over the past decades, laser-produced plasma (LPP) sources have been actively utilized in this field. However, current …
  arxiv Changchao He, Hanxiang Yang, Nanshun Huang, Bo Liu 等 2025-01-24T14:46:44Z 置信度 0.78 physics.acc-ph
• The GOES-R EUVS Model for EUV Irradiance Variability
  The Geostationary Operational Environmental Satellite R (GOES-R) series of four satellites are the next generation NOAA GOES satellites. Once on orbit and commissioned, they are renamed GOES 16-19, making critical terrestrial and space weather measurements thr…
  arxiv E. M. B. Thiemann, F. G. Eparvier, D. Woodraska, P. C. Chamberlin 等 2019-11-20T21:32:36Z 置信度 0.78 astro-ph.SR
• EUV influences on exoplanet atmospheric stability and evolution
  The planetary effective surface temperature alone is insufficient to characterize exoplanet atmospheres and their stability or evolution. Considering the star-planet system as a whole is necessary, and a critical component of the system is the photoionizing st…
  arxiv Allison Youngblood, Kevin France, Tommi Koskinen, Luca Fossati 等 2019-03-13T21:20:12Z 置信度 0.78 astro-ph.EP
• Atom lithography without laser cooling
  Using direct-write atom lithography, Fe nanolines are deposited with a pitch of 186 nm, a full width at half maximum (FWHM) of 50 nm, and a height of up to 6 nm. These values are achieved by relying on geometrical collimation of the atomic beam, thus without u…
  arxiv B. Smeets, P. van der Straten, T. Meijer, C. G. C. H. M. Fabrie 等 2009-08-19T11:55:45Z 置信度 0.78 physics.atom-ph
• EUV Emission from Normal Galaxies
  Using data from the ROSAT Wide Field Camera all-sky survey, we have established upper limits to the extreme ultraviolet (EUV) flux from a sample of 30 bright, nearby, non-active spiral galaxies. These galaxies were chosen to be those most likely to be detected…
  arxiv A. M. Read, T. J. Ponman 1995-06-08T14:25:16Z 置信度 0.78 astro-ph
• Inverse Design of High-NA Metalens for Maskless Lithography
  We demonstrate an axisymmetric inverse-designed metalens to improve the performance of zone-plate-array lithography (ZPAL), one of the maskless lithography approaches, that offer a new paradigm for nanoscale research and industry. First, we derive a computatio…
  arxiv Haejun Chung, Feng Zhang, Hao Li, Owen D. Miller 等 2022-12-13T09:12:44Z 置信度 0.78 physics.optics
• EUVE Observations of VW Hydri in Superoutburst
  EUVE observed the SU UMa-type dwarf nova VW Hydri in superoutburst for an interval of nearly 2 days in 1994 June and produced EUV light curves and the first EUV spectrum of this important CV.
  arxiv Christopher W. Mauche 2005-09-27T06:25:36Z 置信度 0.78 astro-ph
• Lithography Hotspot Detection and Mitigation in Nanometer VLSI
  With continued feature size scaling, even state of the art semiconductor manufacturing processes will often run into layouts with poor printability and yield. Identifying lithography hotspots is important at both physical verification and early physical design…
  arxiv Jhih-Rong Gao, Bei Yu, David Z. Pan 2014-02-13T14:32:56Z 置信度 0.78 cs.AR
• Kinematics and Energetics of the EUV Waves on 11 April 2013
  In this study, we present the observations of extreme-ultraviolet (EUV) waves associated with an M6.5 flare on 2013 April 11. The event was observed by Solar Dynamics Observatory (SDO) in different EUV channels. The flare was also associated with a halo CME an…
  arxiv Aarti Fulara, Ramesh Chandra, P. F. Chen, Ivan Zhelyazkov 等 2019-03-28T17:43:38Z 置信度 0.78 astro-ph.SR
• Nowcast of an EUV dynamic spectrum during solar flares
  In addition to X-rays, extreme ultraviolet (EUV) rays radiated from solar flares can cause serious problems, such as communication failures and satellite drag. Therefore, methods for forecasting EUV dynamic spectra during flares are urgently required. Recently…
  arxiv Toshiki Kawai, Shinsuke Imada, Shohei Nishimoto, Kyoko Watanabe 等 2020-05-13T01:05:05Z 置信度 0.78 astro-ph.SR