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• Tilt induced polarization rotation and its importance in high-NA EUV lithography
  crossref Michael Yeung 2025-04-22T18:33:00Z 置信度 0.70
• Considerations for high-numerical aperture EUV lithography
  crossref Harry J. Levinson, Pawitter Mangat, Thomas Wallow, Lei Sun 等 2013-04-01T18:31:55Z 置信度 0.70
• Evaluations of negative tone development resist and process for EUV lithography
  crossref Toshiya Takahashi, Noriaki Fujitani, Toshiro Itani 2014-04-17T20:38:15Z 置信度 0.70
• Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners
  crossref Thiago S. Jota, Russell A. Chipman 2016-03-19T00:29:35Z 置信度 0.70
• Recent development status of rinse material for EUV lithography
  crossref Kazuma Yamamoto, Maki Ishii, Tomoyasu Yashima, Tatsuro Nagahara 2017-05-05T19:32:32Z 置信度 0.70
• Contact edge roughness in EUV lithography
  Τα αυξημένα στοχαστικά φαινόμενα στις νανοκατασκευαστικές διεργασίες έχουν ως αποτέλεσμα αποκλίσεις των νανοδομών από το προβλεπόμενο σχήμα τους στο σχέδιο και την ομοιομορφία των διαστάσεών τους. Στην από πάνω προς το κάτω προσέγγιση της νανοτεχνολογίας (λιθο…
  crossref Vijayakumar Kuppuswamy 2021-09-15T12:50:51Z 置信度 0.70
• Atomic Xenon Data
  crossref John Gillaspy 2010-11-09T18:48:49Z 置信度 0.70
• Progress in EUV-interference lithography resist screening towards the deployment of high-NA lithography
  crossref Timothée P. Allenet, Xiaolong Wang, Michaela Vockenhuber, Chia-Kai Yeh 等 2021-02-19T22:08:18Z 置信度 0.70
• 3D mask effects of absorber geometry in EUV lithography systems
  crossref Riaz R. Haque, Zac Levinson, Bruce W. Smith 2016-03-18T20:29:35Z 置信度 0.70
• Aerial image monitor for wavefront metrology of high-resolution EUV lithography tools
  crossref Ryan Miyakawa, Patrick Naulleau 2012-03-23T13:24:08Z 置信度 0.70
• Extreme ultraviolet (EUV) lithography
  crossref B.J. Rice 2014-03-21T21:29:54Z 置信度 0.70
• 193 nm—Moderately EUV
  Photolithography at 193 nm is a natural continuation of the progression from 436 to 365 to 248 nm in lithography, dictated by the requirement for continually higher resolution. It is anticipated that 193-nm lithography will enable 0.25-μm patterning and will b…
  crossref M. Rothschild 2023-02-15T15:36:32Z 置信度 0.70
• High-performance multilayer coatings for EUV lithography
  crossref Eberhard Spiller 2004-01-22T17:04:01Z 置信度 0.70
• Plasma Diagnostic Techniques
  crossref Eric Benck 2010-11-09T18:48:49Z 置信度 0.70
• Back Matter
  crossref Andreas Erdmann 2021-02-23T20:16:55Z 置信度 0.70
• EUV lithography scanner for sub-8nm resolution
  crossref Jan van Schoot, Koen van Ingen Schenau, Chris Valentin, Sascha Migura 2015-03-16T22:41:34Z 置信度 0.70
• Free-electron laser emission architecture impact on EUV lithography
  crossref Erik R. Hosler, Obert R. Wood, William A. Barletta 2017-03-31T16:03:13Z 置信度 0.70
• High-NA EUV lithography optics becomes reality
  crossref Lars Wischmeier, Paul Gräupner, Peter Kürz, Winfried Kaiser 等 2020-03-23T18:46:15Z 置信度 0.70
• High performance C/B multilayer for beyond EUV lithography
  crossref Umi Fujimoto, Shinji Yamakawa, Tetsuo Harada 2024-09-24T19:17:08Z 置信度 0.70
• Pattern fidelity verification for logic design in EUV lithography
  crossref Minoru Sugawara, Eric Hendrickx, Vicky Philipsen, Chris Maloney 等 2014-04-17T16:38:15Z 置信度 0.70
• Front Matter
  crossref Andreas Erdmann 2021-02-23T20:17:38Z 置信度 0.70
• EUV Resists
  crossref Harry J. Levinson 2025-12-02T16:36:09Z 置信度 0.70
• EUV lithography optics for sub-9nm resolution
  crossref Bernhard Kneer, Sascha Migura, Winfried Kaiser, Jens Timo Neumann 等 2015-03-16T22:41:34Z 置信度 0.70
• Performance Criteria of Mass-Limited Ice Laser Plasma Targets for EUV Lithography
  The operation of a laser plasma source in a demonstration production-line EUV lithography system will have to meet strict cost and operation criteria. We examine current approaches, especially the mass-limited ice target concept, and compare their anticipated …
  crossref Martin Richardson, Feng Jin 2023-02-15T15:37:53Z 置信度 0.70
• Progress and challenges of EUV patterning material design
  crossref Anuja De Silva 2021-02-19T17:15:55Z 置信度 0.70
• High Average Power Solid-State Laser for EUV Lithography
  A diode-pumped, solid-state laser has recently been activated in the Extreme Ultraviolet Lithography (EUVL) facility at Lawrence Livermore National Laboratory. The purpose of this report is to document the design, operation, current laser operating points, and…
  crossref Mark Hermann, John Honig, Lloyd Hackel 2023-02-15T15:37:37Z 置信度 0.70
• Compatibility assessment of novel reticle absorber materials for use in EUV lithography systems.
  crossref Jetske Stortelder, Arnold Storm, Veronique de Rooij-Lohmann, Chien-Ching Wu 等 2019-03-26T20:38:33Z 置信度 0.70
• Conversion Efficiency and Debris Studies of Ice Targets for EUV Projection Lithography
  Laser produced plasmas from solid metal targets have been shown to produce bright EUV radiation with conversion efficiencies of up to 1.8% 1 within the bandwidth of 0.3 nm at the wavelength of 13 nm, a favored wavelength choice for projection lithography 2 . H…
  crossref F. Jin, M. Richardson 2023-02-15T15:37:47Z 置信度 0.70
• Source collection optics for EUV lithography
  crossref Piotr Marczuk, Wilhelm Egle 2004-10-28T18:12:31Z 置信度 0.70
• Multilayer Coatings for EUVL
  crossref Regina Soufli, Saša Bajt 2009-12-04T17:05:29Z 置信度 0.70
• Novel ultra-high sensitive 'metal resist' for EUV lithography
  crossref Toru Fujimori, Toru Tsuchihashi, Shinya Minegishi, Takashi Kamizono 等 2016-03-19T00:29:35Z 置信度 0.70
• Implementation of assist features in EUV lithography
  crossref Fan Jiang, Martin Burkhardt, Ananthan Raghunathan, Andres Torres 等 2015-03-16T22:41:34Z 置信度 0.70
• Shadowing effect modeling and compensation for EUV lithography
  crossref Hua Song, Lena Zavyalova, Irene Su, James Shiely 等 2011-03-31T20:11:17Z 置信度 0.70
• Extension of practical k1 limit in EUV lithography
  crossref Sarohan Park, Inwhan Lee, Sunyoung Koo, Junghyung Lee 等 2016-03-19T00:29:35Z 置信度 0.70
• Powering EUV Lithography
  crossref Rob Whitner 2006-06-13T18:37:27Z 置信度 0.70
• A next-generation EMF simulator for EUV lithography based on the pseudo-spectral time-domain method
  crossref Michael S. Yeung 2012-03-15T14:07:50Z 置信度 0.70
• Enhancing lithographic performance by new EUV photomask materials
  crossref Supriya L. Jaiswal 2021-02-19T22:09:24Z 置信度 0.70
• Nanoparticle photoresist studies for EUV lithography
  crossref Kazuki Kasahara, Hong Xu, Vasiliki Kosma, Jeremy Odent 等 2017-03-25T07:35:53Z 置信度 0.70
• Advanced Source Studies on Laser Produced Plasmas for EUV Lithography
  Laser-produced plasmas are source candidates for EUV lithography. The radiation angular distribution for several target materials is investigated and source debris is characterized.
  crossref R. C. Spitzer, D. P. Gaines 2023-02-15T10:37:38Z 置信度 0.70
• EUV Exposure Systems
  crossref Harry J. Levinson 2025-12-02T16:36:09Z 置信度 0.70
• Prediction of EUV stochastic microbridge probabilities by lithography simulations
  crossref Erik A. Verduijn, Ulrich Welling, Jiuzhou Tang, Hans-Jürgen Stock 等 2020-03-23T22:46:17Z 置信度 0.70
• Lithography beyond EUV with transmissive diffractive optics
  crossref Henry I. Smith, Martin Feldman 2025-04-22T18:32:55Z 置信度 0.70
• HEIGHTS-EUV Package for DPP Source Modeling
  crossref A. Hassanein, V. Morozov, V. Sizyuk, V. Tolkach 等 2010-11-09T23:48:49Z 置信度 0.70
• Development of under layer material for EUV lithography
  crossref Rikimaru Sakamoto, Bang-Ching Ho, Noriaki Fujitani, Takafumi Endo 等 2011-04-01T00:11:17Z 置信度 0.70
• EUV resists: What's next?
  crossref Anna Lio 2016-03-19T00:29:35Z 置信度 0.70
• Comparative Study of Pd/B₄C X-ray Multilayer Mirrors Fabricated by Magnetron Sputtering with Kr and Ar Gas.
  europepmc 2020 置信度 0.80
• Roadmap on emerging hardware and technology for machine learning.
  europepmc 2021 置信度 0.80
• Fabrication of a Multilayer Implantable Cortical Microelectrode Probe to Improve Recording Potential.
  europepmc 2021 置信度 0.80
• Influence of Surface Texture in Additively Manufactured Biocompatible Materials and Triboelectric Behavior.
  europepmc 2025 置信度 0.80
• Comparing image quality of synchrotron and laboratory nano-CT scans: a round robin study.
  europepmc 2026 置信度 0.80
• Sub-5 nm Silicon Nanopore Sensors: Scalable Fabrication via Self-Limiting Metal-Assisted Chemical Etching.
  europepmc 2025 置信度 0.80
• Roadmap for phase change materials in photonics and beyond.
  europepmc 2023 置信度 0.80
• An Experimental Study of Microchannel and Micro-Pin-Fin Based On-Chip Cooling Systems with Silicon-to-Silicon Direct Bonding.
  europepmc 2020 置信度 0.80
• The influence of the U.S. export controls against China on the resilience of Chinese corporates.
  europepmc 2025 置信度 0.80
• Fabrication of carbon nanomembranes by helium ion beam lithography.
  europepmc 2014 置信度 0.80
• Click Chemistry for Biofunctional Polymers: From Observing to Steering Cell Behavior.
  europepmc 2024 置信度 0.80
• Nanomanufacturing: A Perspective.
  europepmc 2016 置信度 0.80
• High-precision gas refractometer by comb-mode-resolved spectral interferometry.
  europepmc 2018 置信度 0.80
• Features and futures of X-ray free-electron lasers.
  europepmc 2021 置信度 0.80
• On the Electron-Induced Reactions of (CH₃)AuP(CH₃)₃: A Combined UHV Surface Science and Gas-Phase Study.
  europepmc 2022 置信度 0.80
• A Compact Soft X-Ray Microscope using an Electrode-less Z-Pinch Source.
  europepmc 2009 置信度 0.80
• Models for an Ultraviolet-C Research and Development Consortium.
  europepmc 2021 置信度 0.80
• Lynx x-ray microcalorimeter.
  europepmc 2019 置信度 0.80
• A transition-edge sensor-based x-ray spectrometer for the study of highly charged ions at the National Institute of Standards and Technology electron beam ion trap.
  europepmc 2019 置信度 0.80
• A Surface-Coupled Optical Trap with 1-bp Precision via Active Stabilization.
  europepmc 2017 置信度 0.80
• ITU Tier 1+ #4: Semiconductor Scaling (K_semi)
  Tier 1+ Pass-1.5 paper 4 of 45. Operator-algebraic semiconductor-scaling theory unifying Moore's law + EUV + supply chain. Defines K_semi = -log ρ_semi as the operator-algebraic modular Hamiltonian on H_lithography ⊗ H_device ⊗ H_yield ⊗ H_supply. K_semi inher…
  datacite Terada, Munehiro 2026 置信度 0.66 information-theoretic unificationITUK_semimodular HamiltonianPass-1.5 Tier 1+ #4
• ITU Tier 1+ #4: Semiconductor Scaling (K_semi)
  Tier 1+ Pass-1.5 paper 4 of 45. Operator-algebraic semiconductor-scaling theory unifying Moore's law + EUV + supply chain. Defines K_semi = -log ρ_semi as the operator-algebraic modular Hamiltonian on H_lithography ⊗ H_device ⊗ H_yield ⊗ H_supply. K_semi inher…
  datacite Terada, Munehiro 2026 置信度 0.66 information-theoretic unificationITUK_semimodular HamiltonianPass-1.5 Tier 1+ #4
• Data from: Polymer sequence alters sensitivity and resolution in chemically amplified polypeptoid photoresists
  This dataset accompanies the article "Polymer sequence alters sensitivity and resolution in chemically amplified polypeptoid photoresists" by Cameron P. Adams, Carolyn Henein, Xiangxi Meng, Javier Read de Alaniz, Christopher K. Ober, and Rachel A. Segalman. Th…
  datacite Adams, Cameron, Henein, Carolyn, Meng, Xiangxi, Yuan, Chenyun 等 2025 置信度 0.66 polypeptoidphotoresistNanopatterningFOS: Chemical engineering
• Semiconductor Wafer Fab Equipment (WFE) Market Outlook: Trends, Drivers, and Strategic Opportunities 2025–2030
  The global Semiconductor Wafer Fab Equipment (WFE) market was valued at USD 94.97 billion in 2024 and is projected to reach USD 101.57 billion by 2025, expanding further to USD 142.11 billion by 2030 at a CAGR of 7.9% from 2025 to 2030. Growth is driven by ris…
  datacite next move strategy consulting 2026 置信度 0.66
• Semiconductor Wafer Fab Equipment (WFE) Market Outlook: Trends, Drivers, and Strategic Opportunities 2025–2030
  The global Semiconductor Wafer Fab Equipment (WFE) market was valued at USD 94.97 billion in 2024 and is projected to reach USD 101.57 billion by 2025, expanding further to USD 142.11 billion by 2030 at a CAGR of 7.9% from 2025 to 2030. Growth is driven by ris…
  datacite next move strategy consulting 2026 置信度 0.66
• China's 2027 Convergence: Constraint Non-Admissibility and Miscalculation Risk - Technical Analysis with Independent Research Validation
  Comprehensive constraint non-admissibility analysis with independent research validation proving China's 2027 convergence creates maximum miscalculation risk through structural urgency without execution viability, validated by 100% convergence across two uncon…
  datacite Finks, Christopher 2025 置信度 0.66
• China's 2027 Convergence: Constraint Non-Admissibility and Miscalculation Risk - Technical Analysis with Independent Research Validation
  Comprehensive constraint non-admissibility analysis with independent research validation proving China's 2027 convergence creates maximum miscalculation risk through structural urgency without execution viability, validated by 100% convergence across two uncon…
  datacite Finks, Christopher 2025 置信度 0.66
• Global Semiconductor Equipment Manufacturing Market 2025 To 2034
  Semiconductor Equipment Manufacturing Market Size, Trends and Insights By Process (Back-end, Front-end), By Dimension (3D, 2.5D, 2D), By Application (Testing & Inspection, Semiconductor Fabrication Plant/Foundry, Semiconductor Electronics Manufacturing), and B…
  datacite Sirsat, Nitin 2025 置信度 0.66 Semiconductor Equipment Manufacturing MarketSemiconductor Equipment Manufacturing Market SizeSemiconductor Equipment Manufacturing Market ShareSemiconductor Equipment Manufacturing Market TrendsSemiconductor Equipment Manufacturing Market Report
• Global Semiconductor Equipment Manufacturing Market 2025 To 2034
  Semiconductor Equipment Manufacturing Market Size, Trends and Insights By Process (Back-end, Front-end), By Dimension (3D, 2.5D, 2D), By Application (Testing & Inspection, Semiconductor Fabrication Plant/Foundry, Semiconductor Electronics Manufacturing), and B…
  datacite Sirsat, Nitin 2025 置信度 0.66 Semiconductor Equipment Manufacturing MarketSemiconductor Equipment Manufacturing Market SizeSemiconductor Equipment Manufacturing Market ShareSemiconductor Equipment Manufacturing Market TrendsSemiconductor Equipment Manufacturing Market Report
• Laser produced plasma EUV sources for HVM 7nm node lithography: progress in availability and prospects of power scaling
  crossref Igor V. Fomenkov 2019-03-14T21:13:36Z 置信度 0.70
• Fundamentals of EUVL Scanners
  crossref Kazuya Ota 2009-12-04T22:05:29Z 置信度 0.70
• Sources of EUV Light
  crossref Harry J. Levinson 2020-11-09T23:59:47Z 置信度 0.70
• Front Matter: Volume 7969
  crossref 2011-05-04T18:09:07Z 置信度 0.70
• Fundamentals and Limits of Plasma-Based EUV Sources
  crossref Rainer Lebert, Thomas Krücken, H. Kunze 2010-11-09T23:48:49Z 置信度 0.70
• EUV dark field lithography: extreme resolution by blocking 0th order
  crossref Timothy A. Brunner, Jara G. SantaClara, Gerardo Bottiglieri, Christopher N. Anderson 等 2021-02-19T17:08:56Z 置信度 0.70
• A bottom-up pattern collapse mitigation strategy for EUV lithography
  crossref Tero S. Kulmala, Michaela Vockenhuber, Yasin Ekinci 2016-03-19T00:29:35Z 置信度 0.70
• High-Power GDPP Z-Pinch EUV Source Technology
  crossref Uwe Stamm, Guido Schriever, Jürgen Kleinschmidt 2010-11-09T23:48:49Z 置信度 0.70
• Considerations for cost of ownership in EUV lithography
  crossref Anthony Keen, Christopher Bailey, Jos Donders, Neil Condon 2011-03-31T20:11:17Z 置信度 0.70
• A Study on Condition-Based Maintenance for Wafer Table Edge Degradation in Photolithography Equipment.
  europepmc 2026 置信度 0.80
• Absorption-coefficient calculation of short-wavelength photoresist materials: From EUV to BEUV and water window X-ray.
  europepmc 2025 置信度 0.80
• Extreme ultraviolet lithography reaches 5 nm resolution.
  europepmc 2024 置信度 0.80
• Neutral Octa-Adamantane Chalcogenidometalate Clusters via Amine Complexation and Organotin Termination for Nanolithography.
  europepmc 2026 置信度 0.80
• Neutron and photon science facilities at a crossroads: embracing innovation in a changing world.
  Sustaining public investment in neutron and photon science facilities demands breakthrough results comparable to a Higgs moment. Harnessing AI across their accumulated experimental data and collaborative programmes is what makes that possible.
  europepmc 2026 置信度 0.80
• Vortex bifocusing of extreme ultraviolet using modified Fermat-spiral photon-sieve splitter.
  europepmc 2024 置信度 0.80
• Exploring the optimal combination of Ru/Ta bilayer mask stacks and illumination source shapes to mitigate mask 3D effects at high-NA extreme ultraviolet lithography.
  europepmc 2024 置信度 0.80
• Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique.
  europepmc 2025 置信度 0.80
• A progressive wafer scale approach for Sub-10 nm nanogap structures.
  europepmc 2025 置信度 0.80
• Solubility Change Behavior of Fluoroalkyl Ether-Tagged Dendritic Hexaphenol under Extreme UV Exposure.
  europepmc 2024 置信度 0.80
• Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da).
  europepmc 2024 置信度 0.80
• Mechanisms of acid generation from ionic photoacid generators for extreme ultraviolet and electron beam lithography.
  europepmc 2024 置信度 0.80
• Layer-Ordered Organooxotin Clusters for Extreme-Ultraviolet Photolithography.
  europepmc 2024 置信度 0.80
• Recent Advances in Positive Photoresists: Mechanisms and Fabrication.
  europepmc 2024 置信度 0.80
• High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels.
  europepmc 2025 置信度 0.80
• Sub-Nanometer Line Edge Roughness in Helium-ion Lithography
  europepmc 2024 置信度 0.80
• Weakly guiding approximation of a three-dimensional waveguide model for extreme ultraviolet lithography simulation.
  europepmc 2024 置信度 0.80