半导体与先进封装 · 全部实体（第 26 / 100 页）

本页收录第 2501–2600 条，共 10000 条 · 返回 半导体与先进封装 首页

• Ferroelectric Optoelectronic Memory Based on p-GaN/ZnGa(2)O(4)/BaTiO(3)/n-ITO Heterojunction with Integrated Sensing and Logic Operations.
  Ferroelectric optoelectronic memories, capable of integrating sensing, computing, and storage functionalities, hold significant potential in the fields of artificial intelligence and the Internet of Things. In this study, a nonvolatile p-GaN/ZnGa 2 O 4 /BaTiO …
  pubmed Han W, Liu K, Yang J, Huang X 等 2025 Feb 19 置信度 0.82
• First principles investigation of electron mobility enhancement of β-Ga(2)O(3) doped with indium.
  β-Ga 2 O 3 is one of the new-generation wide-bandgap semiconductor materials that has attracted much attention in recent years. However, the reported room-temperature electron mobility of β-Ga 2 O 3 is much lower than GaN and SiC. Alloying Ga 2 O 3…
  pubmed Zhang L, Huang J, Shen Y, Liu F 等 2025 Feb 12 置信度 0.82
• High current density heterojunction bipolar transistors with 3D-GaN/2D-WSe(2) as emitter junctions.
  With the continuous advancement of electronic technology, there is an increasing demand for high-speed, high-frequency, and high-power devices. Due to the inherently small thickness and absence of dangling bonds of two-dimensional (2D) materials, heterojunctio…
  pubmed Xu M, Li G, Guo Z, Shang J 等 2025 May 6 置信度 0.82
• Nitrogen-doping-induced electron spin polarization activates scandium oxide as high-performance zinc-air battery cathode.
  Platinum (Pt) is the most active catalyst for the oxygen reduction reaction (ORR). However, the scarcity, high cost, and susceptibility to deactivation of Pt constrain its large-scale applications. Transition metal oxide (TMO) materials have emerged as promisi…
  pubmed Chen Y, Li J, Cheng Y, Tian X 等 2025 May 15 置信度 0.82
• Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (112̅2) AlGaN Film.
  Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is r…
  pubmed Gao Y, Yu Y, Yang J, Wang P 等 2025 Feb 12 置信度 0.82
• Bulk photovoltaic effect in a two-dimensional ferroelectric semiconductor α-In(2)Se(3).
  The bulk photovoltaic effect, arising from the separation of charge carriers driven by crystal symmetry, is an intriguing physical phenomenon that has been attracting broad interest in the field of photovoltaic applications due to its junction-free nature and …
  pubmed Chen X, Xu K, Qin T, Wang Y 等 2025 Feb 27 置信度 0.82
• Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H- Silicon Carbide.
  Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and hig…
  pubmed Dietz J, Xie A, Day AM, Hu EL 2025 Feb 11 置信度 0.82
• Hydrothermal growth and characterization of large Rb(2)SnBr(6) double perovskite crystals: a promising semiconductor material for photocatalysis and optoelectronics.
  In this study, we present the growth of large (millimeter- and centimeter-scale) crystals of Rb 2 SnBr 6 double perovskite via a hydrothermal process. The crystals and powders were successfully synthesized, yielding light-yellow products, and subjected to comp…
  pubmed Hasan R, Aslam HZ, Joshi R, Lalancette RA 等 2025 Feb 25 置信度 0.82
• Development of Robust MWCNT Hydrogel Electrochemical Biosensor for Pyocyanin Detection by Phosphotungstic Acid Modification.
  The trace detection of pyocyanin (PCN) is crucial for infection control, and electrochemical sensing technology holds strong potential for application in this field. A pivotal challenge in utilizing carbon materials within electrochemical sensors lies in const…
  pubmed Xue T, Gao L, Dai X, Ma S 等 2025 Jan 19 置信度 0.82
• Hybrids of Deep HOMO Organic Cyanoacrylic Acid Dyes and Graphene Nanomaterials for Water Splitting Photoanodes.
  Dye-sensitization is a promising strategy to improve the light absorption and photoactivity abilities of wide-bandgap semiconductors, like TiO 2 . For effective water-splitting photoanodes with no sacrificial agents, the electrochemical potential of the dye mu…
  pubmed Ansón-Casaos A, Benito AM, Maser WK, Orduna J 等 2025 Jan 20 置信度 0.82
• Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.
  In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to …
  pubmed Wang B, Tang Z, Song Y, Liu L 等 2025 Jan 17 置信度 0.82
• Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
  Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) …
  pubmed Ghosh S, Frentrup M, Hinz AM, Pomeroy JW 等 2025 Mar 置信度 0.82
• Mechanically Resilient and Highly Efficient Flexible Perovskite Solar Cells with Octylammonium Acetate for Surface Adhesion and Stress Relief.
  Flexible perovskite solar cells (FPSCs) have advanced significantly because of their excellent power-per-weight performance and affordable manufacturing costs. The unsatisfactory efficiency and mechanical stability of FPSCs are bottleneck challenges that limit…
  pubmed Xu Y, Zhang S, Yuan H, Jiao Y 等 2025 Feb 4 置信度 0.82
• Multiple Exciton Generation on Doped Wide-Band Semiconductor Photoanode with Hierarchical Quantum Structure.
  The multiple exciton generation (MEG) effect, which produces multiple photo-generated charge carriers from a single high-energy photon absorption by a semiconductor with a narrow bandgap, has the potential to revolutionize photovoltaic, photoelectric detection…
  pubmed Fang K, Chen Z, Yang LA, Ao JP 等 2025 置信度 0.82
• Bandgap Engineering Based on A-site Ions Tuning in Tin Halide Perovskite.
  Tin-based halide perovskites (ASnX 3 ) have garnered substantial interest due to their unique photoelectric properties and environmentally friendly features. The A-site ions tuning strategy has been proven to promote material performance. However, there is a l…
  pubmed Li M, Luo J, He J, Sun T 等 2025 Feb 置信度 0.82
• Improvement of glucose detection using 10 nm Al(2)O(3) thin film on diamond solution-gate field-effect transistor.
  Glucose detection is crucial for diagnosis, prevention and treatment of diabetes mellitus. In this work, 10 nm Al 2 O 3 thin film was introduced on the channel of diamond solution-gate field-effect transistor (SGFET) to improve the performance of glucose …
  pubmed Du Y, Zhang Q, Wu H, Liu X 等 2025 May 1 置信度 0.82
• Strong Enhancement of Light Emission in Core-Shell InGaN/GaN Multi-Quantum-Well Nanowire Light-Emitting Diodes by Incorporating Graphene Quantum Dots.
  One-dimensional (1D) vertical nitrides are highly attractive for light-emitting diode (LED) applications because they are useful for overcoming the drawbacks of conventional GaN planar structures. However, the internal quantum efficiency (IQE) of GaN multi-qua…
  pubmed Hwang SW, Kim JM, Lee H, Jang CW 等 2025 Jan 29 置信度 0.82
• Modification of the Se/MoO(x) Rear Interface for Efficient Wide-Band-Gap Trigonal Selenium Solar Cells.
  Trigonal selenium (t-Se) is a promising wide-band-gap photovoltaic material with a high absorption coefficient, abundant resources, simple composition, nontoxicity, and a low melting point, making it suitable for absorbers in advanced indoor and tandem photovo…
  pubmed Bao F, Liu L, Wang X, Xiao B 等 2025 Jan 29 置信度 0.82
• LiOH Additive Triggering Beneficial Aging Effect of SnO(2) Nanocrystal Colloids for Efficient Wide-Bandgap Perovskite Solar Cells.
  Commercial SnO 2 nanocrystals used for producing electron transporting layers (ETLs) of perovskite solar cells (PSC) are prone to aggregation at room temperature and contain many structural defects. Herein, we report that the LiOH additive can simultaneously d…
  pubmed Zhou Y, Chen J, Zhu W, Yang M 等 2025 Jan 29 置信度 0.82
• Intervalence plasmons in boron-doped diamond.
  Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. Whil…
  pubmed Bhattacharya S, Boyd J, Reichardt S, Allard V 等 2025 Jan 14 置信度 0.82
• Band Tailoring Enabled Perovskite Devices for X-Ray to Near-Infrared Photodetection.
  Perovskite semiconductors have shown significant promise for photodetection due to their low effective carrier masses and long carrier lifetimes. However, achieving balanced detection across a broad spectrum-from X-rays to infrared-within a single perovskite p…
  pubmed He YC, Dun GH, Deng J, Peng JL 等 2025 Mar 置信度 0.82
• High-performance van der Waals stacked transistors based on ultrathin GaPS(4) dielectrics.
  Exploring high-κ gate dielectrics is crucial for the achievement of high-performance field-effect transistors (FETs). Here, we report the synthesis of a few-layer wide bandgap semiconductor gallium thiophosphate (GaPS 4 ), which can be easily mechanicall…
  pubmed Xiao Z, Zeng B, Xu F, Liu G 等 2025 Feb 20 置信度 0.82
• Water and seawater splitting with MgB(2) plasmonic metal-based photocatalyst.
  Plasmonic nanostructures can help to drive chemical photocatalytic reactions powered by sunlight. These reactions involve excitation of plasmon resonances and subsequent charge transfer to molecular orbitals under study. Here we engineered photoactive plasmoni…
  pubmed Kravets VG, Grigorenko AN 2025 Jan 7 置信度 0.82
• Fluorine-expedited nitridation of layered perovskite Sr(2)TiO(4) for visible-light-driven photocatalytic overall water splitting.
  Photocatalytic overall water splitting is a promising approach for a sustainable hydrogen provision using solar energy. For sufficient solar energy utilization, this reaction ought to be operated based on visible-light-active semiconductors, which is very chal…
  pubmed Yu J, Huang J, Li R, Li Y 等 2025 Jan 3 置信度 0.82
• Flexible Electrode Arrays Based on a Wide Bandgap Semiconductors for Chronic Implantable Multiplexed Sensing and Heart Pacemakers.
  Implantable systems with chronic stability, high sensing performance, and extensive spatial-temporal resolution are a growing focus for monitoring and treating several diseases such as epilepsy, Parkinson's disease, chronic pain, and cardiac arrhythmias. These…
  pubmed Truong TA, Huang X, Barton M, Ashok A 等 2025 Jan 14 置信度 0.82
• Ultra-Flexible High-Linearity Silicon Nanomembrane Synaptic Transistor Array.
  The increasing demand for mobile artificial intelligence applications has elevated edge computing to a prominent research area. Silicon materials, renowned for their excellent electrical properties, are extensively utilized in traditional electronic devices. H…
  pubmed Zhu J, Liu C, Gao R, Zhang Y 等 2025 Feb 置信度 0.82
• Oriented wide-bandgap perovskites for monolithic silicon-based tandems with over 1000 hours operational stability.
  The instability of hybrid wide-bandgap (WBG) perovskite materials (with bandgap larger than 1.68 eV) still stands out as a major constraint for the commercialization of perovskite/silicon tandem photovoltaics, yet its correlation with the facet properti…
  pubmed Yao Y, Li B, Ding D, Kan C 等 2025 Jan 2 置信度 0.82
• Predicting thermodynamic stability of inorganic compounds using ensemble machine learning based on electron configuration.
  Machine learning offers a promising avenue for expediting the discovery of new compounds by accurately predicting their thermodynamic stability. This approach provides significant advantages in terms of time and resource efficiency compared to traditional expe…
  pubmed Zou H, Zhao H, Lu M, Wang J 等 2025 Jan 2 置信度 0.82
• Symmetry Engineering in a 2D Transition Metal Enables Reconfigurable P- and N-Type FETs.
  Two-dimensional (2D) transition metals enable the elimination of metal-induced gap states and Fermi-level pinning in field-effect transistors (FETs), offering an advantage over conventional metal contacts. However, transition metal substrates typically exhibit…
  pubmed Wu Y, Wang J, Yuan G, Chen Y 等 2025 Feb 5 置信度 0.82
• Aero-TiO(2) three-dimensional nanoarchitecture for photocatalytic degradation of tetracycline.
  One of the biggest issues of wide bandgap semiconductor use in photocatalytic wastewater treatment is the reusability of the material and avoiding the contamination of water with the material itself. In this paper, we report on a novel TiO 2 aeromaterial (aero…
  pubmed Ciobanu V, Galatonova T, Braniste T, Urbanek P 等 2024 Dec 28 置信度 0.82
• In-situ designed Bi metal @ defective Bi(2)O(2)SO(4) to enhance photocatalytic NO removal via boosted directional interfacial charge transfer.
  Photocatalytic technology provides a new approach for the harmless treatment of low concentration NO x in the atmosphere. The development of high-performance semiconductor materials to improve the light absorption efficiency and the separation efficiency of ph…
  pubmed Geng Q, Xie H, He Y, Chen S 等 2025 Mar 5 置信度 0.82
• Boosting of the piezoelectric photocatalytic performance of Bi(2)MoO(6) by Fe(3+) doping and construction S-scheme heterojunction using WO(3).
  Although self-polarized piezoelectric semiconductor photocatalysts significantly enhance the separation of internally generated photocarriers, their photocatalytic performance is constrained by insufficient internal polarisation and a wide bandgap. Additionall…
  pubmed Li J, Chen C, Bai J, Jin Y 等 2025 Apr 置信度 0.82
• Defect dependent electronic properties of two-dimensional transition metal dichalcogenides (2H, 1T, and 1T' phases).
  Transition metal dichalcogenides (TMDs) exhibit a wide range of electronic properties due to their structural diversity. Understanding their defect-dependent properties might enable the design of efficient, bright, and long-lifetime quantum emitters. Here, we …
  pubmed Hanedar BA, Onbaşlı MC 2025 Jan 22 置信度 0.82
• Enhanced Dielectric Energy Storage Performance of Polyimide/γ-Ga(2)O(3) Nanocomposites under Dual Trap Mechanisms.
  The rapid development of advanced electronics, hybrid vehicles, etc. has imposed heightened requirements on the performance of polymer dielectrics. However, the energy density ( U e ) of polymer dielectrics significantly decreases due to increased leakage curr…
  pubmed Gao K, Liu F, Lv F, Li N 等 2025 Jan 8 置信度 0.82
• High-pressure band-gap engineering and structural properties of van der Waals BiOCl nanosheets.
  van der Waals BiOCl semiconductors have gained significant attention due to their excellent photochemical catalysis, low-cost and non-toxicity. However, their intrinsic wide band gap limits visible light utilization. This study explores high-pressure band-gap …
  pubmed Dan Y, Ye M, Dong W, Yao Y 等 2024 Dec 10 置信度 0.82
• Experimental demonstration of a photonic reservoir computing system based on Fabry Perot laser for multiple tasks processing.
  Photonic reservoir computing (RC) is a simple and efficient neuromorphic computing framework for human cortical circuits, which is featured with fast training speed and low training cost. Photonic time delay RC, as a simple hardware implementation method of RC…
  pubmed Guo X, Zhou H, Xiang S, Yu Q 等 2024 Apr 置信度 0.82
• Giant Ultrabroadband Bulk Photovoltaic Effect Engendered by Two-Photon Absorption in α-In(2)Se(3) for Chiral Terahertz Wave Generation.
  Bulk photovoltaic effect (BPVE) can break the Shockley-Queisser limit by leveraging the inherent asymmetry of crystal lattice without a junction. However, this effect is mainly confined to UV-vis spectrum due to the wide-bandgap nature of traditional ferroelec…
  pubmed Lei Z, Xi Y, Shi M, Xu G 等 2025 Feb 置信度 0.82
• Ga(2)O(3) Solar-Blind Deep-Ultraviolet Photodetectors with a Suspended Structure for High Responsivity and High-Speed Applications.
  The wide-bandgap semiconductor material Ga 2 O 3 exhibits great potential in solar-blind deep-ultraviolet (DUV) photodetection applications, including none-line-of-sight secure optical communication, fire warning, high-voltage electricity monitoring, and marit…
  pubmed Li X, Wu Z, Fang Y, Huang S 等 2024 置信度 0.82
• Indium aluminum nitride: A review on growth, properties, and applications in photovoltaic solar cells.
  InAlN semiconductor alloy is a promising option for the fabrication of optoelectronic devices, such as high efficiency solar cells, due to its wide variable bandgap, from 0.64 eV to 6.2 eV. Traditionally, the production of high quality InAlN has been…
  pubmed Cañón-Bermúdez JD, Mulcué-Nieto LF 2024 Nov 30 置信度 0.82
• Detection of Aβ40 in cerebrospinal fluid and plasma of Alzheimer's disease patients using photoelectrochemical biosensors.
  An ultra-sensitive photoelectrochemical (PEC) biosensor for amyloid-beta 40 (Aβ40), a biomarker for Alzheimer's disease (AD), was developed using g-C₃N₄ modified with gold nanoparticles (Au NPs) to form Au-C₃N₄. This…
  pubmed Li L, Wei N, Guo Y, Zhu X 等 2024 Dec 4 置信度 0.82
• Machine learning-assisted investigation on the thermal transport of β-Ga2O3 with vacancy.
  β-Ga2O3 is a promising ultra-wide bandgap semiconductor in high-power and high-frequency electronics. The low thermal conductivity of β-Ga2O3, which can be further suppressed by the intrinsic vacancy, has been a major bottleneck for improving the p…
  pubmed Dong S, Zhang G, Zhang G, Lan X 等 2024 Dec 7 置信度 0.82
• Configuration-Mediated Efficient Non-Radiative Transition for R848-Assisted Photothermal Immunotherapy to Inhibit Tumor Growth and Metastasis by An In Situ Tumor Vaccine Strategy.
  Cancer metastasis remains a critical factor contributing to the current limitations in cancer treatment. Photothermal immunotherapy has emerged as a safe and potent therapeutic approach, demonstrating the capability to suppress tumor growth and metastasis. Whi…
  pubmed Dai J, Fang L, Wang X, Hua J 等 2025 Feb 3 置信度 0.82
• Exploring wide gap semiconductor characteristics in α -pinene crystals: insights from density functional theory.
  α -Pinene, a bicyclic monoterpene found extensively in the essential oils of conifers, has shown potential in pharmacological applications. This study theoretically investigates the structural and electronic properties of the (1S)- ( - ) - α -pinen…
  pubmed Santos TA, Marques RB, Silva AM, Martins EPS 等 2024 Nov 30 置信度 0.82
• Luminescence Mechanisms of Quaternary Zn-Ag-In-S Nanocrystals: ZnS:Ag, In or AgInS(2):Zn?
  Highly emissive Zn-Ag-In-S nanocrystals have attracted attention as derivatives of I-III-VI 2 -type nanocrystals without the use of toxic elements. The wide tunability of their luminescence wavelengths is attributed to the controllable bandgap of the solid sol…
  pubmed Fujiki H, Hamanaka Y, Chen S, Kuzuya T 2025 Mar 3 置信度 0.82
• First principle calculations of structural, electronic, and optical properties of XSnO(3)(X: Ca, Mg, Sr) perovskite oxides.
  The perovskite oxides XSnO 3 have garnered significant attention due to their potential applications in various fields, including electronics, photonics, and renewable energy technologies. This study presents a comprehensive theoretical investigation of the st…
  pubmed Larbi R, Candan I, Cakmak A, Sahnoun O 等 2024 Dec 6 置信度 0.82
• Novel Structures for PV Solar Cells: Fabrication of Cu/Cu(2)S-MWCNTs 1D-Hybrid Nanocomposite.
  The production of cost-effective novel materials for PV solar cells with long-term stability, high energy conversion efficiency, enhanced photon absorption, and easy electron transport has stimulated great interest in the research community over the last decad…
  pubmed Nuriyeva S, Karimova A, Shirinova H, Jafarova S 等 2024 Oct 29 置信度 0.82
• High Electrical Conductance in Magnetic Emission Junction of Fe(3)GeTe(2)/ZnO/Ni Heterostructure via Selective Spin Emission through ZnO Ohmic Barrier.
  The insulator is essential for magnetic tunneling junction (MTJ) that increases magnetoresistance (MR) by decoupling magnetization directions between two ferromagnets. However, wide bandgap tunnel barrier blocks the thermionic emission of electrons, significan…
  pubmed Kim WK, Kim N, Park MH, Shin YH 等 2025 Jan 置信度 0.82
• Two-dimensional boron nitride allotrope Irida-B(12)N(12) with 3-6-8 membered rings and wide-bandgap semiconducting properties.
  We present a novel two-dimensional (2D) boron nitride allotrope, Irida- B 12 N 12 (Ir-BN), analogous to the all-carbon Irida-Graphene (Ir-G). The predicted structure of Ir-BN consists of alternating boron and nitrogen atoms, forming three distinct lattices wit…
  pubmed Pereira ML Jr, da S Gomes D, Lima KAL, Nze GDA 等 2024 Nov 21 置信度 0.82
• Symmetry engineering in 2D bioelectronics facilitating augmented biosensing interfaces.
  Symmetry lies at the heart of two-dimensional (2D) bioelectronics, determining material properties at the fundamental level. Breaking the symmetry allows emergent functionalities and effects. However, symmetry modulation in 2D bioelectronics and the resultant …
  pubmed Wu Y, Liu Y, Li Y, Wei Z 等 2024 Nov 26 置信度 0.82
• Strongly enhanced shift current at exciton resonances in a noncentrosymmetric wide-gap semiconductor.
  Excitons are fundamental quasiparticles that are ubiquitous in photoexcited semiconductors and insulators. Despite causing a sharp and strong photoabsorption near the interband absorption edge, charge-neutral excitons do not yield photocurrent in conventional …
  pubmed Nakamura M, Chan YH, Yasunami T, Huang YS 等 2024 Nov 16 置信度 0.82
• Boosting Carrier Transport in Quasi-2D/3D Perovskite Heterojunction for High-Performance Perovskite/Organic Tandems.
  Wide-bandgap (WBG) perovskites are continuously in the limelight owing to their applicability in tandem solar cells. The main bottlenecks of WBG perovskites are interfacial non-radiative recombination and carrier transport loss caused by interfacial defects an…
  pubmed Kang S, Wang Z, Chen W, Zhang Z 等 2025 Jan 置信度 0.82
• High-κ monocrystalline dielectrics for low-power two-dimensional electronics.
  The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric …
  pubmed Yin L, Cheng R, Wan X, Ding J 等 2025 Feb 置信度 0.82
• Uncovering upconversion photoluminescence in layered PbI(2) above room temperature.
  As a van der Waals (vdW) layered semiconductor material, lead iodide (PbI 2 ) possessing a direct bandgap with strong photoluminescence emission in visible range has gained wide attention in applications of photonic and optoelectronic devices. Here, upconversi…
  pubmed Ambardar S, Yang X, Gao J 2024 Nov 6 置信度 0.82
• A Single-Crystal Antimony Trioxide Dielectric for 2D Field-Effect Transistors.
  The remarkable potential of two-dimensional (2D) materials in sustaining Moore's law has sparked a research frenzy. Extensive efforts have been made in the research of utilizing 2D semiconductors as channel materials in field-effect transistors. However, the n…
  pubmed Wang D, Dong W, Wang P, Hu Q 等 2025 Jan 置信度 0.82
• Impact of UV annealing on the hole effective mobility in SnO pFET.
  Using ultraviolet (UV) annealing through wide energy bandgap HfO 2 /SiO 2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µ eff ) from 55 cm 2 /V-s at low hole density (Q h ) to 13.38 cm 2 /V-s at 5 × 10 12 cm -2 Q…
  pubmed Zeng SH, Pooja P, Wu J, Chin A 2024 Nov 1 置信度 0.82
• Recent advances in tungsten oxide-based chromogenic materials: photochromism, electrochromism, and gasochromism.
  As n-type and wide-bandgap semiconductor materials which are widely found in nature, tungsten oxides (WO x ) have attracted extensive attention because of their rich phase structures and unique sub-stoichiometric properties. Tungsten oxides have a good chromog…
  pubmed Zhang Y, Ding Y, Lan F, Zhang W 等 2024 Nov 28 置信度 0.82
• Composition analysis of β-(In (x) Ga(1-x) )(2)O(3) thin films coherently grown on (010) β-Ga(2)O(3) via mist CVD.
  This study investigates the compositional analysis and growth of β-(In x Ga 1- x ) 2 O 3 thin films on (010) β-Ga 2 O 3 substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the corr…
  pubmed Nishinaka H, Kajita Y, Hosaka S, Miyake H 2024 置信度 0.82
• Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration.
  We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an id…
  pubmed Horn CP, Wicker C, Wellisz A, Zeledon C 等 2024 Nov 12 置信度 0.82
• Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer.
  In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidate…
  pubmed Yu Q, Shi C, Yang L, Lu H 等 2024 Sep 30 置信度 0.82
• A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics.
  Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap s…
  pubmed Shangguan Q, Lv Y, Jiang C 2024 Oct 19 置信度 0.82
• Exploring the Crystal Structure and Electronic Properties of γ-Al(2)O(3): Machine Learning Drives Future Material Innovations.
  For decades, researchers have struggled to determine the precise crystal structure of γ-Al 2 O 3 due to its atomic-level disorder and the challenges associated with obtaining high-purity, high-crystallinity γ-Al 2 O 3 in laboratory settings. This s…
  pubmed Bu Z, Xue Y, Zhao X, Liu G 等 2024 Nov 6 置信度 0.82
• Achilles tendinopathy treatment via circadian rhythm regulation.
  Achilles tendinopathy (AT) is a prevalent musculoskeletal disorder closely linked to oxidative stress. Existing evidence suggests a potential link between circadian clock rhythms and oxidative stress. However, the precise role of the circadian clock in the pro…
  pubmed Zhang Y, Wu Y, Wang Y, Lu J 等 2025 Sep 置信度 0.82
• Synthetic Control of Water-Stable Hybrid Perovskitoid Semiconductors.
  Hybrid metal-halide perovskites and their derived materials have emerged as the next-generation semiconductors with a wide range of applications, including photovoltaics, light-emitting devices, and other optoelectronics. Over the past decade, numerous single-…
  pubmed Kim J, Ghosh S, Smith NWG, Liu S 等 2025 Jun 置信度 0.82
• Anisotropy of radiation-induced defects in Yb-implanted β-Ga(2)O(3).
  RE-doped β-Ga 2 O 3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga 2 O 3 , which is crucial for device manuf…
  pubmed Ratajczak R, Sarwar M, Kalita D, Jozwik P 等 2024 Oct 22 置信度 0.82
• Narrowband Electroluminescence from Color Centers in Hexagonal Boron Nitride.
  Defects in wide bandgap materials have emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of single emitters may lead to scalable on-chip devices and therefore is highly sought after. However, most wide bandgap …
  pubmed Park G, Zhigulin I, Jung H, Horder J 等 2024 Dec 4 置信度 0.82
• Nanosecond Carrier Lifetime of Hexagonal Ge.
  Hexagonal Si 1- x Ge x with suitable alloy composition promises to become a new silicon compatible direct bandgap family of semiconductors. Theoretical calculations, however, predict that the binary end point of this family, the bulk hex-Ge crystal, is only we…
  pubmed van Lange VT, Dijkstra A, Fadaly EMT, Peeters WHJ 等 2024 Oct 16 置信度 0.82
• Development of a silicon carbide radiation detection system and experimentation of the system performance.
  Silicon carbide (SiC) detectors have excellent radiation detection capabilities for various radiation particles, including high energy resolution, fast response times, and good radiation resistance. A SiC radiation detection system was developed to measure the…
  pubmed Song J, Tang X, Gong P, Hu Z 等 2024 Dec 置信度 0.82
• Isomeric diammonium passivation for perovskite-organic tandem solar cells.
  In recent years, perovskite has been widely adopted in series-connected monolithic tandem solar cells (TSCs) to overcome the Shockley-Queisser limit of single-junction solar cells. Perovskite-organic TSCs, comprising a wide-bandgap (WBG) perovskite solar cell …
  pubmed Jiang X, Qin S, Meng L, He G 等 2024 Nov 置信度 0.82
• Morphology-electronic effects in ultra-model nanocatalysts under the CO oxidation reaction: the case of ZnO ultrathin films grown on Pt(111).
  The study of the surface morphology and interface of metal-oxides is crucial for understanding the behavior of these model systems as nanocatalysts. Besides, understanding the interplay between morphology, stability, and reactivity is crucial for designing eff…
  pubmed Liu H, Zhang L, Lebègue S, Bournel F 等 2024 Nov 7 置信度 0.82
• Extremely Low Thermal Resistance of β-Ga(2)O(3) MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging.
  Gallium oxide (Ga 2 O 3 ) emerges as a promising ultrawide bandgap semiconductor, which is expected to surpass the performance of current wide bandgap materials, like GaN and SiC, in electronic devices. However, widespread application of Ga 2 O 3 is hindered b…
  pubmed Qu Z, Xie Y, Zhao T, Xu W 等 2024 Oct 23 置信度 0.82
• Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN.
  Transition-metal centers exhibit a paramagnetic ground state in wide-bandgap semiconductors and are promising for nanophotonics and quantum information processing. Specifically, there is a growing interest in discovering prominent paramagnetic spin defects tha…
  pubmed Czelej K, Lambert MR, Turiansky ME, Koshevarnikov A 等 2024 Oct 22 置信度 0.82
• Ultra-high PDCR(>10(9)) of vacuum-UV photodetector based on Al-doped Ga(2)O(3)microbelts.
  Al-doped Ga 2 O 3 microbelts with widths ranging from 20 to 154 μ m and lengths up to 2 mm were grown using carbothermal reduction. Based on these ultra-wide microbelts, single-microbelt (37 μ m wide) and double-microbelts(38 μ m/42 μ m…
  pubmed Hu ZP, Chen HF, Ding ZJ, Lu Q 等 2024 Oct 21 置信度 0.82
• Analysis of dislocation defects in compositionally step-graded α-(Al (x) Ga(1-x) )(2)O(3) layers.
  The ultra-wide bandgap semiconductor α-Ga 2 O 3 can be heteroepitaxially grown on a sapphire substrate. However, due to a lattice mismatch of about 4.6% with a sapphire substrate, many dislocation defects occur in α-Ga 2 O 3 films. To reduce the di…
  pubmed Yasuoka T, Susami H, Liu L, Dang GT 等 2024 Oct 1 置信度 0.82
• Facile formation of van der Waals metal contact with III-nitride semiconductors.
  Metal-semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices. The exploration of van der Waals (vdW) metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at th…
  pubmed Sun X, Wang D, Wu X, Zhang J 等 2024 Dec 15 置信度 0.82
• A light-addressable potentiometric sensor-based extracellular calcium dynamic monitoring and imaging platform for cellular calcium channel drug evaluation.
  Disruption and dysregulation of cellular calcium channel function can lead to diseases such as ischemic stroke, heart failure, and arrhythmias. Corresponding calcium channel drugs typically require preliminary efficacy evaluations using in vitro models such as…
  pubmed Tian S, Ma C, Zhu Y, Xu Q 等 2025 Jan 1 置信度 0.82
• Wafer-Sized CsPbBr(3)/CsPbCl(3) Heterojunction: Breaking the Trade-Off between Sensitivity and Dark Current for Efficient X-ray Detector.
  Polycrystalline lead halide perovskite finds promising use in fabricating X-ray detectors with a large lateral size, adjustable thickness, and diverse synthesis processes. However, a large dark current hinders its development for weak signal detection. Herein,…
  pubmed Ba Y, Zhu W, Xu Z, Jiang S 等 2024 Oct 16 置信度 0.82
• Synthesis and photocatalytic activity of cation-doped titanium oxynitrides (Ti(2.85-x)M(x)O(4)N, M = Zn, Co, Cu).
  The utilization of visible light in photocatalytic semiconductors is restricted by the presence of a wide energy bandgap and fast electron-hole pair recombination. This study aims to address this limitation by synthesizing nitrogen- and cation-doped Cs 0.68 Ti…
  pubmed Gao Q, Shi W, Chen W 2024 Oct 22 置信度 0.82
• Investigation of fullerene and non-fullerene materials in organic photocatalysts on the efficiency of photocatalytic degradation of polychlorinated biphenyls.
  The photocatalytic degradation of polychlorinated biphenyls (PCBs) is advancing, yet the efficiency of degradation within the visible spectral range continues to encounter significant challenges. In this study, two biochar-based organic semiconductor photocata…
  pubmed Yan H, Liang Y, Liu T, Huang C 等 2025 Feb 置信度 0.82
• Orbit symmetry breaking in MXene implements enhanced soft bioelectronic implants.
  Bioelectronic implants featuring soft mechanics, excellent biocompatibility, and outstanding electrical performance hold promising potential to revolutionize implantable technology. These biomedical implants can record electrophysiological signals and execute …
  pubmed Wu Y, Li Y, Liu Y, Zhu D 等 2024 Oct 4 置信度 0.82
• Physical Properties of an Efficient MAPbBr(3)/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors.
  Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed …
  pubmed Hidouri T, Pavesi M, Vaccari M, Parisini A 等 2024 Sep 10 置信度 0.82
• Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation.
  Given the surpassing of the Shockley-Quiesser efficiency limit in conventional p-n junction photovoltaic effect, bulk photovoltaic effect (BPVE) has garnered significant research interest. However, the BPVE primarily focuses on a narrow wavelength range, limit…
  pubmed Wang Z, Tan C, Peng M, Yu Y 等 2024 Sep 27 置信度 0.82
• Wide-field imaging of active site distribution on semiconducting transition metal dichalcogenide nanosheets in electrocatalytic and photoelectrocatalytic processes.
  Semiconducting transition metal dichalcogenide (TMD) nanosheets are promising materials for electrocatalysis and photoelectrocatalysis. However, the existing analytical approaches are inadequate at comprehensively describing the operation of narrow-bandgap sem…
  pubmed Wen L, Chen H, Hao R 2024 Sep 20 置信度 0.82
• Using both faces of polar semiconductor wafers for functional devices.
  Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide-bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along a unique crystal axis 1 . This makes the two surfaces of the semiconductor waf…
  pubmed van Deurzen L, Kim E, Pieczulewski N, Zhang Z 等 2024 Oct 置信度 0.82
• Plasmonic Particle Integration into Near-Infrared Photodetectors and Photoactivated Gas Sensors: Toward Sustainable Next-Generation Ubiquitous Sensing.
  Current challenges in environmental science, medicine, food chemistry as well as the emerging use of artificial intelligence for solving problems in these fields require distributed, local sensing. Such ubiquitous sensing requires components with 1) high sensi…
  pubmed Schlicke H, Maletz R, Dornack C, Fery A 2024 Nov 置信度 0.82
• Graphene-PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity.
  Photodetectors converting light into electrical signals are crucial in various applications. The pursuit of high-performance photodetectors with high sensitivity and broad spectral range simultaneously has always been challenging in conventional semiconductor …
  pubmed Qing J, Wang S, Gu S, Lin L 等 2024 Aug 26 置信度 0.82
• Inorganic Semiconductor-Based Flexible UV Photodetector Arrays Achieved by Specific Flip-Chip Bonding.
  In recent years, flexible UV photodetectors (PDs) with complex environmental adaptability and great wearability have attracted the attention of researchers worldwide. Wide bandgap inorganic semiconductor materials with excellent optoelectronic properties and m…
  pubmed Chen L, Wang Y, Zhang J, Chen L 等 2024 Sep 25 置信度 0.82
• Controllable p- and n-type behaviours in emissive perovskite semiconductors.
  Reliable control of the conductivity and its polarity in semiconductors is at the heart of modern electronics 1-7 , and has led to key inventions including diodes, transistors, solar cells, photodetectors, light-emitting diodes and semiconductor lasers. F…
  pubmed Xiong W, Tang W, Zhang G, Yang Y 等 2024 Sep 置信度 0.82
• Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics.
  The development of monolithic integrated energy-efficient complementary circuits is crucial for the large-scale application of wide bandgap semiconductor-based high-frequency and high-power field-effect transistors (FETs). However, the inferior performance of …
  pubmed Zhang W, Liu B, Zhang S, Zhang X 等 2024 Sep 12 置信度 0.82
• Utilizing machine learning to enhance performance of thin-film solar cells based on Sb(2)(S (x) Se(1-x) )(3): investigating the influence of material properties.
  Antimony chalcogenides (Sb 2 (S x Se 1- x ) 3 ) have drawn attention as a potential semiconducting substance for heterojunction photovoltaic (PV) devices due to the remarkable optoelectronic properties and wide range of bandgaps spanning from 1.1 to 1.7 eV. In…
  pubmed Khan TM, Saidani O, Ahmed SRA 2024 Aug 29 置信度 0.82
• An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties.
  Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor depos…
  pubmed Chen R, Sathasivam S, Borowiec J, Carmalt CJ 2024 Aug 27 置信度 0.82
• High Open-Circuit Voltage Wide-Bandgap Perovskite Solar Cell with Interface Dipole Layer.
  Wide-bandgap perovskite solar cells (PSCs) with high open-circuit voltage (V oc ) represent a compelling and emerging technological advancement in high-performing perovskite-based tandem solar cells. Interfacial engineering is an effective strategy to enhance …
  pubmed Heo J, Prayogo JA, Lee SW, Park H 等 2024 Dec 置信度 0.82
• A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric.
  The application of GaN HEMTs on silicon substrates in high-voltage environments is significantly limited due to their complex buffer layer structure and the difficulty in controlling wafer warpage. In this work, we successfully fabricated GaN power HEMTs on 6-…
  pubmed Zhang J, Li X, Ji J, You S 等 2024 Aug 2 置信度 0.82
• Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions.
  GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm 2 /mg) and Bi ion (LET = 98 MeV·cm 2 /mg) were used to irradi…
  pubmed Zhang X, Cao Y, Chen C, Wu L 等 2024 Jul 24 置信度 0.82
• Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga(2)O(3).
  β-Ga 2 O 3 is an ultra-wide bandgap semiconductor (E g ~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga 2 O 3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In t…
  pubmed Sarwar M, Ratajczak R, Ivanov VY, Gieraltowska S 等 2024 Aug 10 置信度 0.82
• Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
  Orthorhombic gallium oxide (κ-Ga2O3) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application is hindered at present by the limited physical understanding of the relationship between synthesis and functional pr…
  datacite Mazzolini, Piero, Varley, Joel Basile, Parisini, Antonella, Sacchi, Anna 等 2024 置信度 0.66 500 Naturwissenschaften und Mathematik::530 Physik::530 Physikκ-Ga2O3 thin filmsolecular beam epitaxymetal-organic vapour phase epitaxyannealing treatments
• Utilization of Novel (KNbO3)1−x(Ba2FeNbO6)x (x = 0.1, 0.2, 0.3) Solid Solutions for Efficient Photo-Assisted Fenton Degradation of Methylene Blue Dye
  Novel (KNbO3)1−x(Ba2FeNbO6)x (x = 0.1, 0.2, 0.3) solid solutions corresponding to K0.82Ba0.18Fe0.09Nb0.91O3, K0.64Ba0.36Fe0.18Nb0.82O3, and K0.46Ba0.54Fe0.27Nb0.73O3 compounds have been synthesized via molten salt method. X‐ray diffraction confirms the formati…
  datacite Avcıoğlu, Celal, Kraus, Peter, Avcıoğlu, Suna, Müller, Julian T. 等 2024 置信度 0.66 600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::620 Ingenieurwissenschaften und zugeordnete Tätigkeitenphotocatalytic dye degradationperovskite solid solutionsphotocatalysisphoto‐Fenton process
• (Ge,Sn)O2-based ultra-wide bandgap semiconductor thin films for power electronics
  This thesis explores the molecular beam epitaxy (MBE) of semiconducting ultra-wide bandgap (UWBG) group IV oxides, with a particular focus on GeO2, SnO2, and their ternary alloy (SnxGe1−x)O2. Through a combination of in-situ characterization techniques and ex-…
  datacite Chen, Wenshan 2026 置信度 0.66 500 Naturwissenschaften und Mathematik::540 Chemie::542 Techniken, Ausstattung, Materialienmolecular beam epitaxy (MBE)GeO2SnO2kinetics
• Copper (I) oxide-based nanoparticles for bioimaging applications
  This thesis aims to rationally design semiconductor nanoparticles and metal-semiconductor core-shell nanomaterials and investigate their potential as fluorescent probes for bio-imaging applications. Inorganic semiconductor nanoparticles are considered promisin…
  datacite Zohora, Nafisa 2024 置信度 0.66 Condensed matter physics not elsewhere classified
• On frequency domain analysis of dual active bridge dc-dc converters
  Modern society uses electrical energy for a wide range of needs and requirements. Electrical energy is considered high value as it requires a prior conversion step from kinetic/thermal or solar energy. However, electrical power is always defined by certain pro…
  datacite Riedel, Jan 2024 置信度 0.66 Circuits and systemsElectrical energy transmission, networks and systemsIndustrial electronics
• Development of oxide electronics based on two-dimensional materials derived from liquid metals
  Transparent and flexible electronics have been integrated in our daily life in many forms of applications. The contributions of such technologies range from displays, wearables, automotive circuits, solar cells, and the list goes on. To date, several materials…
  datacite Aukarasereenont, Patjaree 2024 置信度 0.66 Functional materialsCondensed matter physics not elsewhere classified