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• PCB-Integrated GHz Bandwidth Resistive Voltage and Current Probes for Characterization of Wide Bandgap Semiconductor Devices
  crossref Mehdi Gholizadeh, Sajjad Sadeghi, David J. Pommerenke 2025-08-15T18:20:18Z 置信度 0.70
• High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates
  crossref S.T. Sheppard, R.P. Smith, W.L. Pribble, Z. Ring 等 2003-06-25T22:14:31Z 置信度 0.70
• Silica Zinc Titanate Wide Bandgap Semiconductor Nanocrystallites: Synthesis and Characterization
  Abstract SiO 2 x:ZnO: (1-x)TiO 2 nanocrystallites were made via sol-gel route, and co-firing at a lower temperature (600 o C). The synthesized nanocrystallites were characterized using several analytical techniques including XRD, SEM/TEM, FT IR, THz, and UV–vi…
  crossref A. M. Mansour, Ali B. Abou Hammad, Ahmed M. Bakr, Amany M. El Nahrawy 2022-04-24T23:30:35Z 置信度 0.70
• Current-Voltage Characteristics of 4H-SiC Diodes with Ni Contacts
  crossref M. Sochacki, J. Szmidt, A. Werbowy, M. Bakowski 2009-04-06T20:38:50Z 置信度 0.70
• Temperature Dependence of Optical Energy Gap of Gallium Selenide
  crossref M. Kepinska, M. Nowak, Z. Kovalyuk, R. Murri 2009-04-06T20:37:48Z 置信度 0.70
• DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures
  crossref Ho-Young Cha, Hyungtak Kim, Jongtae Lim 2010-05-13T21:46:36Z 置信度 0.70
• Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters
  crossref En-Chih Chang, Chenxi Meng 2019-07-15T20:47:40Z 置信度 0.70
• SIMS Analysis of Wide Bandgap Semiconductors
  crossref Robert G. Wilson 2008-12-18T10:16:47Z 置信度 0.70
• Ion Implantation in Wide Bandgap Semiconductors
  crossref John C. Zolper 2008-12-18T05:16:47Z 置信度 0.70
• indirect bandgap semiconductor
  Citation: 'indirect bandgap semiconductor' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.14022 • License: The IUPAC Gold Book is licensed under Cr…
  crossref 2025-01-02T16:58:49Z 置信度 0.70
• Thermal modeling of wide bandgap materials for power MOSFETs
  crossref Mahesh B. Manandhar, Mohammad A. Matin 2016-09-22T01:31:59Z 置信度 0.70
• Thermal Properties of CN Thin Films Measured by Photothermal Methods
  crossref J. Bodzenta, B. Burak, J. Mazur, J. Szmidt 2009-04-06T20:37:48Z 置信度 0.70
• Coupled radiation and aging effects on wide bandgap power devices
  Effet des radiations sur les composants de puissance grand gap Les composants électroniques de puissance fonctionnant dans des environnements radiatifs sont exposés à différents types d'effets dus aux rayonnements tels que les effets de dommages par événement …
  crossref Kimmo Niskanen 2026-04-04T07:17:26Z 置信度 0.70
• Application-related characterization and theoretical potential of wide-bandgap devices
  crossref Achim Endruschat, Thomas Heckel, Holger Gerstner, Christopher Joffe 等 2017-12-13T19:37:17Z 置信度 0.70
• Simulation of push-pull inverter using wide bandgap devices
  crossref Mustafa Al-badri, Mohammed A. Matin 2016-09-21T21:31:59Z 置信度 0.70
• AuPb2I7: A Narrow Bandgap Au3+ Iodide Semiconductor
  crossref 2020-04-04T08:29:29Z 置信度 0.70
• Thermo-mechanical design of heterogeneous integrated wide bandgap power modules
  crossref Lei Wang 2025-02-05T13:06:28Z 置信度 0.70
• Silicon Dioxide as Passivating, Ultrathin Layer in MOSFET Gate Stacks
  crossref T. Bieniek, A. Wojtkiewicz, L. Lukasiak, R. B. Beck 2009-04-06T20:37:48Z 置信度 0.70
• Wide Bandgap III-Nitride Micro- and Nano-Photonics
  crossref Hongxing Jiang, Jingyu Lin 2017-07-13T21:20:42Z 置信度 0.70
• Application and reliability analysis of sintered silver preforms for die attachment of wide bandgap devices
  crossref Sayan Seal, Michael D. Glover, H. Alan Mantooth 2016-01-04T16:35:16Z 置信度 0.70
• Impact of Layout Parasitics on Wide Bandgap-based Power Converters
  crossref Janus Dybdahl Meinert 2024-11-01T08:19:24Z 置信度 0.70
• Quantitative modeling of point defects in β-Ga(2)O(3) combining hybrid functional energetics with semiconductor and processes thermodynamics.
  β-Gallium oxide (β-Ga 2 O 3 ) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and high critical field. Optimization of crystal growth processes to p…
  pubmed Arnab KA, Stephens M, Maxfield I, Lee C 等 2025 May 28 置信度 0.82
• Co-Doping Effects on the Electronic and Optical Properties of β-Ga(2)O(3): A First-Principles Investigation.
  To meet the demands for functional layers in inverted flexible perovskite solar cells, high-performance formamidinium-based perovskite solar cells, and high-performance photodetectors in future applications, it is crucial to appropriately reduce the bandgap of…
  pubmed Wang YR, Luan SZ 2025 置信度 0.82
• Photoluminescence study of optical transitions in spinel zinc gallium oxide thin films.
  Spinel ZnGa 2 O 4 is an ultra-wide bandgap material that can have a great potential for deep ultraviolet (UV) photonics and other applications. In this work, zinc gallium oxide (ZnGaO) samples with Zn composition ranging from 0.0 to 48.0 at% were grown in a pl…
  pubmed Shou C, Yang T, Ren K, Almujtabi A 等 2025 May 14 置信度 0.82
• Influence of Fluorine Doping on Rutile TiO(2) Nanostructures for Visible-Light-Driven Photocatalysis: A DFT + U Study.
  In this work, a density functional theory (DFT) with Hubbard correction (U) approaches implemented through the Quantum ESPRESSO code is utilized to investigate the effects of fluorine (F) doping on the structural, electronic, and optical properties of rutile T…
  pubmed Geldasa FT, Dejene FB 2025 May 5 置信度 0.82
• Nanomaterial ZnO Synthesis and Its Photocatalytic Applications: A Review.
  Zinc oxide (ZnO), a cheap, abundant, biocompatible, and wide band gap semiconductor material with easy tunable morphologies and properties, makes it one of the mostly studied metal oxides in the area of materials science, physics, chemistry, biochemistry, and …
  pubmed Zhu C, Wang X 2025 Apr 30 置信度 0.82
• Efficient n-Type Doping of Hexagonal Boron Nitride via Localized Band-Offset Compensation Strategy.
  Hexagonal boron nitride (h-BN) holds great potential for next-generation electronics, yet efficient n-type doping remains challenging due to high dopant activation energies. Here, a band-offset compensation strategy is proposed using hybrid density functional …
  pubmed Ma X, Shi Z, Zang H, Chen Y 等 2025 Nov 置信度 0.82
• Polarization Sensitive Vacuum-Ultraviolet Photodetectors Based on m-Plane h-BN.
  Vacuum ultraviolet (VUV) detection plays an essential role in space science, radiation monitoring, electronic industry, and fundamental research. Integrating polarization characteristics into VUV detection enriches the comprehension of the target attributes an…
  pubmed Chen L, Long Z, Liu J, Liu L 等 2025 Jul 置信度 0.82
• Elucidating Carrier Dynamics and Interface Engineering in Sb(2)S(3): Toward Efficient Photoanode for Water Oxidation.
  Conjugation of low-cost and high-performance semiconductors is essential in solar-driven photoelectrochemical (PEC) energy conversion. Sb 2 S 3 is a wide-bandgap (≈1.7 eV) semiconductor with the potential to deliver a maximum photocurrent density…
  pubmed Tos ID, Simbula A, Guerrero J, Dong T 等 2025 Jul 17 置信度 0.82
• Ultrasensitive Deep-Ultraviolet Photodetectors Based On Band Engineering and Ferroelectric Modulation.
  Wide bandgap semiconductors have emerged as a class of deep-ultraviolet sensitive materials, showing great potentials for next-generation integrated devices. Yet, to achieve a high photoresponse of deep-ultraviolet detector without complicated designs at low s…
  pubmed Wu H, Shu L, Zhang Q, Sha S 等 2025 Jul 置信度 0.82
• Tunable electronic and optical properties of the MoTe(2)/black phosphorene van der Waals heterostructure: a first-principles study.
  van der Waals heterostructures have attracted widespread attention due to their unique photoelectric properties. In this study, formation and stability, electrical structure, and optical properties of the MoTe 2 /BP vdWH are examined utilizing density function…
  pubmed Chu Q, Peng B, Yuan L, Zhang Y 等 2025 May 21 置信度 0.82
• Study of ZrO(2) Gate Dielectric with Thin SiO(2) Interfacial Layer in 4H-SiC Trench MOS Capacitors.
  The transition of SiC MOSFET structure from planar to trench-based architectures requires the optimization of gate dielectric layers to improve device performance. This study utilizes a range of characterization techniques to explore the interfacial properties…
  pubmed Huang Q, Guo Y, Wang A, Bai Z 等 2025 Apr 10 置信度 0.82
• Bi(2)Se(3)-PtSe(2) heterostructure ultrabroadband UV-to-THz negative photoconductive photodetectors with wide-temperature-range operation.
  Ultra-broadband photodetectors have important applications in biomedical imaging, environmental monitoring, optical communication, space exploration, and other fields. Therefore, the need for their wide-temperature-range adaptation in extreme environments ( e.…
  pubmed Shu T, Tan C, Hu G, Luo S 等 2025 May 23 置信度 0.82
• Single photon emission from point defects in hexagonal boron nitride nanosheets enabled via ambient annealing.
  Single photon emitters (SPEs) in two-dimensional van der Waals crystals are essential for developing quantum technologies due to their ready integration into photonic circuits and high photon extraction efficiency. Hexagonal boron nitride (h-BN) exhibits an ul…
  pubmed Guo Y, Xiao Y, Zeng L, Tai J 等 2025 May 7 置信度 0.82
• Photocatalytic innovations in PFAS removal: Emerging trends and advances.
  Per- and polyfluoroalkyl substances (PFAS), such as perfluorooctanoic acid (PFOA) and perfluorooctanesulfonic acid (PFOS), are persistent environmental pollutants posing significant risks to ecosystems, drinking water safety, and human health. Conventional PFA…
  pubmed Tabatabaei M, Cho DW, Fahad S, Jeong DW 等 2025 Jun 10 置信度 0.82
• Atomic-Scale Behavior of Radiation-Resistant ZnO under High-Energy Electron Bombardment.
  Understanding the atomic structure and defect characteristics of ZnO thin films is crucial for optimizing their electronic properties and performance in advanced applications. Here, we investigate the atomic structure and defect characteristics of atomic layer…
  pubmed Lagunas F, Li S, Hood ZD, Jones JC 2025 May 14 置信度 0.82
• Ultralow-pressure mechanical-motion switching of ferroelectric polarization.
  Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics and holds promise for human interface applications. The prevailing mechanical approach is locally induced flexoelectricity with lar…
  pubmed Wang B, He X, Luo J, Chen Y 等 2025 May 2 置信度 0.82
• Buried Interface Regulation with TbCl(3) for Highly-Efficient All-Inorganic Perovskite/Silicon Tandem Solar Cells.
  All-inorganic perovskite materials exhibit exceptional thermal stability and promising candidates for tandem devices, while their application is still in the initial stage. Here, a metal halide doping strategy was implemented to enhance device performance and …
  pubmed Chai W, Zhu W, Xi H, Chen D 等 2025 Apr 30 置信度 0.82
• Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga(2)O(3)/AlN Schottky Barrier Diode Grown via MOCVD.
  β-phase gallium oxide (β-Ga 2 O 3 )/aluminum nitride (AlN) heterojunctions hold significant potential for high-power and microwave device applications. In this study, we systematically investigated the properties of the β-Ga 2 O 3 /AlN hetero…
  pubmed Wang AF, Ma HP, Huang QM, Gu L 等 2025 May 7 置信度 0.82
• Green synthesis, characterization, structural, morphological, antibacterial, and cytotoxicity evaluation of zinc oxide nanoparticles using Fioria vitifolia extract.
  The increasing prevalence of bacterial pathogens diseases and the rise in multidrug resistance highlights the urgent need for new drug delivery systems or novel drug molecules to enhance treatment options. Zinc oxide (ZnO) nanoparticles attracting attention du…
  pubmed Nandhini A, Anilkumar P, Jasmin J, Balamurali S 2025 Aug 置信度 0.82
• The Barrier Inhomogeneity and the Electrical Characteristics of W/Au β-Ga(2)O(3) Schottky Barrier Diodes.
  In this work, the electrical properties of the Ga 2 O 3 Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the β -Ga 2 O 3 surface re…
  pubmed Xie L, Zhang T, Xu S, Su H 等 2025 Mar 25 置信度 0.82
• High-Quality GaP(111) Grown by Gas-Source MBE for Photonic Crystals and Advanced Nonlinear Optical Applications.
  The precise fabrication of semiconductor-based photonic crystals with tailored optical properties is critical for advancing photonic devices. GaP(111) is a material of particular interest due to its high refractive index, wide optical bandgap, and pronounced o…
  pubmed Hestroffer K, Rivoire K, Vučković J, Hatami F 2025 Apr 18 置信度 0.82
• Observation of Conductive Interstitial Ga Line Defects in β-Ga(2)O(3).
  Beta-phase gallium sesquioxide (β-Ga 2 O 3 ), possessing an ultrawide bandgap and high breakdown voltage, exhibits strong potential for deep-ultraviolet photodetection and high-power electronics. However, nanometer-scale line defects, prevalent in &#x3b2…
  pubmed Wang L, Liu S, Liu Z, Han M 等 2025 Jul 置信度 0.82
• S4-KD: A single step spiking SiamFC+ + for object tracking with knowledge distillation.
  Spiking neural networks (SNNs), which transmit information through binary spikes, have the advantages of high efficiency and low energy consumption. At present, the multiple time steps of SNNs can lead to increased latency and power consumption. To this end, w…
  pubmed Liu W, Xiang S, Zhang T, Han Y 等 2025 Aug 置信度 0.82
• Exploring the Photocatalytic Mechanism of BiTi(4)GaO(11): Insights from the Electronic Structure and Chemical Bonding.
  Photocatalytic water splitting and CO 2 reduction offer sustainable solutions to energy and environmental issues, but efficient semiconductor photocatalysts are still limited. Oxide photocatalysts with d 0 and/or d 10 metals often have wide bandgaps, and incor…
  pubmed Lu G, Cheng Z, Avdeev M, Jiang P 等 2025 Apr 28 置信度 0.82
• Coherent photoelectrical readout of single spins in silicon carbide at room temperature.
  Establishing a robust and integratable quantum system capable of sensitive qubit readout at ambient conditions is a key challenge for developing prevalent quantum technologies, including quantum networks and quantum sensing. Paramagnetic colour centres in wide…
  pubmed Nishikawa T, Morioka N, Abe H, Murata K 等 2025 Apr 15 置信度 0.82
• Controlling Thermal Conductivity of Amorphous SiO(x) Films through Structural Engineering Utilizing Single Crystal Substrate Surfaces.
  Development of thin films with low thermal conductivity (κ) and high dielectric breakdown strength is essential to engineer insulating materials for electronics packaging and other application domains, such as power electronics. Silica glass (SiO 2 ) has…
  pubmed Kirchner KA, Ogasawara S, Jeem M, Ohta H 等 2025 May 14 置信度 0.82
• A SiC DSRD-based pulse generator with sub-nanosecond, high frequency and high-voltage for desulfovibrio sulfate-reducing bacteria ablation.
  Sulfate-reducing bacteria (SRB) are ubiquitous in industrial wastewater. As a type of slime bacteria, they tend to combine with suspended solids to form slime, interfering the normal operation of purification equipment. As heterotrophic bacteria, they produce …
  pubmed Sun L, Zhang Z, Guo J, Yin H 等 2025 May 置信度 0.82
• Photocatalytic removal of methylene blue via HAp/AGCN composites: Synergistic effects and mechanistic insights.
  The demand for heterogeneous photocatalysts has increased due to their potential application in dye degradation, utilizing natural and artificial light sources to mitigate environmental pollution. Hydroxyapatite (HAp), a biocompatible and non-toxic biomaterial…
  pubmed Vishwa Priya U, Saranya A, Sankara Narayanan TSN, Ravichandran K 2025 Aug 1 置信度 0.82
• Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers.
  This study proposed an innovative method for growing gate oxide on silicon carbide (SiC), where silicon oxide (SiO 2 ) was fabricated on a deposited Al 2 O 3 layer, achieving high quality gate oxide. A thin Al 2 O 3 passivation layer was deposited via atomic l…
  pubmed Wang Z, Bai Z, Guo Y, Ding C 等 2025 Apr 5 置信度 0.82
• A Modified Model Dielectric Function for Analyzing Optical Spectra of InGaN Nanofilms on Sapphire Substrates.
  Due to a lower InN bandgap energy Eg~0.7 eV, InxGa1-xN/Sapphire epifilms are considered valuable in the development of low-dimensional heterostructure-based photonic devices. Adjusting the composition x and thickness d in epitaxially grown films has offered ma…
  pubmed Talwar DN, Lin HH, Haraldsen JT 2025 Mar 24 置信度 0.82
• Improving the Stability of Wide Bandgap Perovskites: Mechanisms, Strategies, and Applications in Tandem Solar Cells.
  Tandem solar cells (TSCs) based on wide bandgap (WBG) perovskites have gained significant attention for their higher power conversion efficiency (PCE) compared to single-junction cells. The role of WBG perovskite solar cells (PSCs) as the sub-cell in tandem ce…
  pubmed Jiang W, Zhu Y, Liu J, Yang W 等 2025 置信度 0.82
• Engineered etching and laser treatment of porous silicon for enhanced sensitivity and speed of Pt/n-PSi/Pt UV photodetectors.
  Silicon-based photodetectors offer notable advantages in cost, performance, and reliability. However, while nanoscale silicon (porous silicon, PSi) effectively emits visible light, it remains inefficient as an indirect-bandgap semiconductor. To improve its opt…
  pubmed Thahe AA, Dahi A, Qaeed MA, Farhat OF 等 2025 May 13 置信度 0.82
• Sn9C15 monolayer with desirable bandgap, high carrier mobilities, and broadband light absorption for photovoltaic devices.
  Two-dimensional carbon-based materials show considerable promise for applications in a wide range of fields, including aerospace, energy storage, and catalysis, due to their great advantages of abundant carbon resources, relatively low-cost, non-toxicity, and …
  pubmed Gao SY, Zheng YF, He SQ, Fang H 等 2025 Apr 7 置信度 0.82
• Quantification of lead through rod-shaped silver-doped zinc oxide nanoparticles using an electrochemical approach.
  Special features of zinc oxide nanoparticles have drawn a lot of interest due to their wide bandgap, high surface area, photocatalytic activity, antimicrobial activity, and semiconductor properties. By doping ZnO nanoparticles with transition metals, we can al…
  pubmed Lamba R, Bhanjana G, Dilbaghi N, Gupta V 等 2025 置信度 0.82
• Hot Electron Engineering in Layered Heterojunctions for Efficient Infrared Detection.
  Although infrared detection is of high technological and strategic importance, the narrow-bandgap materials used for infrared detection often suffer from poor air stability and pose environmental hazards. Hot electron-based detectors avoid such issues by using…
  pubmed Dasika P, Hays P, Puliyassery S, Watanabe K 等 2025 Apr 15 置信度 0.82
• Fabrication of Bifacial-Modified Perovskites for Efficient Semitransparent Solar Cells with High Average Visible Transmittance.
  Semitransparent perovskite solar cells (PSCs) that possess a high-power conversion efficiency (PCE) and high average visible light transmittance (AVT) can be employed in applications such as photovoltaic windows. In this study, a bifacial modification comprisi…
  pubmed Chen D, Shi W, Gao Y, Wang S 等 2025 Mar 10 置信度 0.82
• Advances in wide-bandgap semiconductor-based photocathode devices for low-light-level applications
  crossref Melville P. Ulmer, Bruce W. Wessels, Oswald H. W. Siegmund 2003-11-17T20:18:22Z 置信度 0.70
• Confluence of Wide-Bandgap and Differential-Mode EV Charger Technologies
  crossref Sudip K. Mazumder, Shantanu Gupta, Moien Mohammadi, Nikhil Kumar 等 2025-08-26T12:25:01Z 置信度 0.70
• Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics
  crossref Yoon-Soo Park 2003-11-19T07:21:11Z 置信度 0.70
• Assessment of Impact of Wide Bandgap Semiconductor Devices on Performance of Power Circuits and Systems
  <div class="htmlview paragraph">The purpose of this paper is to quantitatively compare the efficiency, of silicon and silicon carbide power devices in power circuit environments. Models developed for the MOSFET, PiN rectifier, Schottky rectifier, for bot…
  crossref R. Gupta, N. Ramungul, T. P. Chow, D. A. Torrey 等 2010-10-07T15:56:01Z 置信度 0.70
• Reviewing of Using Wide-bandgap Power Semiconductor Devices in Electric Vehicle Systems: from Component to System
  crossref Thang V. Do, Ke Li, Joao P. Trovao, Loic Boulon 2021-02-20T10:42:10Z 置信度 0.70
• 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications
  crossref 2020-02-02T09:07:56Z 置信度 0.70
• Reliability of wide bandgap semiconductor diode lasers
  crossref Steven L. Yellen, Robert G. Waters, Harvey B. Serreze, Allan H. Shepard 等 2004-12-18T00:44:02Z 置信度 0.70
• Automatic Big Data Acquisition of Electrical Parameters in Wide Bandgap Devices
  crossref Chengkun Liu, Ze Ni, Mengxuan Wei, Aaron Niehaus 等 2020-02-18T05:18:07Z 置信度 0.70
• Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements
  crossref Julian Weimer, Dominik Koch, Ruben Schnitzler, Ingmar Kallfass 2021-06-15T16:29:29Z 置信度 0.70
• Three-Terminal Self-Powered Solar-Blind Photodetectors Based on Engineered Ultra-Wide Bandgap Semiconductor Geo2 Heterojunctions
  crossref Shuxian Zang, Xingyu Liu, Yang Chen, Chen Guo 等 2025-08-16T20:42:26Z 置信度 0.70
• Global Patent Information Analysis of Semiconductor Ultraviolet Devices and Application Technology
  crossref LYU Tiangang, LYU Henan, Wang Yuefei 2021-01-04T15:40:45Z 置信度 0.70
• Optimization Algorithms for Dynamic Tuning of Wide Bandgap Semiconductor Device Models
  crossref William Collings, Tolen Nelson, Andrew Sellers, Raghav Khanna 等 2021-07-21T21:38:10Z 置信度 0.70
• A New Wide Bandgap Semiconductor: Carbyne Nanocrystals
  Abstract Deep ultraviolet (DUV) photodetectors (PDs) always and inevitably face a drastic working environment such as high temperature. However, DUV PDs based on the reported wide bandgap semiconductor materials cannot simultaneously possess high stability and…
  crossref Fei Yang, Zhaoqiang Zheng, Yan He, Pu Liu 等 2021-06-25T09:58:30Z 置信度 0.70
• Wide Bandgap Devices
  crossref 2011-06-07T13:30:06Z 置信度 0.70
• Ultrafast Laser-Induced Defects in β-Gallium Oxide Below Ablation Threshold.
  In this work, (2̅01)β-Ga 2 O 3 was irradiated with 95 fs, 1030 nm laser pulses in order to investigate ultrafast laser-induced morphological and crystalline defects, which play an important role in the controlled transformation of materials at the …
  pubmed DeAngelis E, Chae C, Alam S, Gao H 等 2026 Jan 14 置信度 0.82
• Strain-invariant near-zero Poisson's ratio emerging in 2D (CuX)(2)P(8)Se(3) (X = Br, I) hybrid structures.
  Zero Poisson's ratio (ZPR) materials with exceptional mechanical properties offer promising opportunities for applications in aerospace, sensing, and flexible electronics. Here, we theoretically predict two monolayer hybrid compounds, (CuBr) 2 P 8 Se 3 and (Cu…
  pubmed Meng X, Jia M, Shen H, Yin H 2026 Jan 20 置信度 0.82
• Interfacial-Modulated Lattice-Polarity-Controlled Quasi-van der Waals Epitaxy of AIN Film.
  Recently, van der Waals epitaxy (vdWE) of 3D semiconductor films on 2D materials has become a pioneering technique. In this work, we present the interface bonding and nucleation mechanism of AlN on h-BN, and we systematically demonstrate the polarity manipulat…
  pubmed Duo Y, Wang L, Liu Z, Zhou F 等 2026 Jan 14 置信度 0.82
• Dynamic Barrier Modulation in Graphene-Diamond Schottky Interfaces for Enhanced Ultraviolet Photodetection.
  Wide-bandgap diamond photodetectors face a fundamental trade-off between dark current suppression and photocurrent collection due to high Schottky barriers. Here, a photo-modulation strategy is demonstrated by integrating monolayer graphene as transparent elec…
  pubmed Zhang X, Liu K, Fan S, Zhang S 等 2025 置信度 0.82
• A Study on Visible Light Communication Systems Based on OLED Devices.
  Addressing the limitations of conventional inorganic light-emitting diodes (LEDs) in flexible visible light communication (VLC) applications, this study investigates the feasibility of organic light-emitting diodes (OLEDs) as an integrated platform for illumin…
  pubmed Zhang W, Xu H, Ji S, Lan J 2025 Nov 27 置信度 0.82
• Boosting Performance of Ga(2)O(3) Thin-Film Transistors via Defect Passivation toward Solar-Blind Ultraviolet In-Sensor Reservoir Computing.
  Ga 2 O 3 thin-film transistors (TFTs) are resilient to high temperatures and voltages and are suitable for demanding display and sensing applications. Nevertheless, the performance of current Ga 2 O 3 TFTs is constrained by defect-induced impediments to free c…
  pubmed Li P, Shi J, Li Z, Lin Y 等 2026 Jan 13 置信度 0.82
• High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates.
  Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in he…
  pubmed Li S, Wu M, Yang L, Lu H 等 2025 Dec 15 置信度 0.82
• Native GaN/GaO(x) Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors.
  The drive for complementary transistors with ultra-steep subthreshold swing (SS) and minimal power consumption has intensified interest in integrating low-dimensional semiconductors with wide-bandgap materials, as silicon scaling approaches its physical limits…
  pubmed Liang J, Liu C, Wei Y, Feng S 等 2025 置信度 0.82
• A Microfiber-Reinforced Janus Hydrogel E-Skin With Recyclable Feature for Multimodal Sensing and Gender-Specific Physiological Monitoring.
  Hydrogel-based wearable electronics hold great promise for physiological monitoring, yet their application in privacy-sensitive regions remains constrained by the simultaneous demands of ultrathin form factors, mechanical robustness, multimodal sensing, and lo…
  pubmed Ding Y, Li Y, Tan S, Sun J 等 2026 Mar 置信度 0.82
• High-Quality Wide-Bandgap 0D Cs (4) PbI (6) Perovskite Single Crystal for High-Performance Ultraviolet Photodetectors and X‑ray Detectors.
  All-inorganic perovskites, renowned for their superior photoelectric properties, have found extensive applications across diverse fields. Among these, perovskite-based visible-blind ultraviolet photodetection and X-ray detection have emerged as rapidly evolvin…
  pubmed Di J, Hu Y, Wu R, Wang D 等 2025 置信度 0.82
• Tailored Construction of Piezoelectricity in Amino Acid Assemblies through Molecular Engineering.
  Amino acid assemblies are a promising smart biomaterial for wearable and implantable bioelectronics due to their intriguing physical properties, inherent biocompatibility, and adaptability to functionalization. However, the impact of metal ions on the favorabl…
  pubmed Zhang J, Du P, Yin P, Jiang X 等 2026 Jan 13 置信度 0.82
• High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy.
  Gallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high thermal-…
  pubmed Zhou H, Zhang C, Zhang K, Huang Z 等 2025 Dec 18 置信度 0.82
• Stochastic modeling of microcavity laser-based photonic reservoir computing: An information processing capacity perspective.
  The growing demand for efficient temporal processing has highlighted the limitations of von Neumann architectures, making photonic time-delay reservoir computing (TDRC) an attractive alternative. We develop a stochastic modeling framework for semiconductor mic…
  pubmed Huang J, Wang T, Lüdge K, Han Y 等 2026 置信度 0.82
• Rb(4)CuSb(2)Cl(11) and Rb(2)In(0.91(0.2))Sb(0.09)Cl(5)·H(2)O: Wide Band Gap 0D Metal Halide Semiconductors.
  Herein, we report the discovery, structural and photophysical characterization of a new zero-dimensional (0D) lead-free all-inorganic halide, Rb 4 CuSb 2 Cl 11 , which adopts a new structure type. Single-crystal X-ray diffraction (SCXRD) shows that the structu…
  pubmed Shoukat H, Pinky T, Muhammad MS, Masood Z 等 2026 Jan 12 置信度 0.82
• Unlocking feature-rich properties of carbon-substituted germanene nanoribbons.
  Using density functional theory (DFT) calculations with both PBE and HSE06 functionals, we have systematically investigated the diverse structural, electronic, and magnetic properties of various carbon-substituted 7AGeNR and 6ZGeNR systems. This includes the e…
  pubmed Hoat DM, Tran NTT, Ho QD, Hoang DQ 等 2026 Jan 14 置信度 0.82
• Defect Dynamics and Solution-Processed Interconnects in Perovskite-Organic Tandem Solar Cells.
  Perovskite and organic semiconductors exhibit analogous properties, including bandgap tunability, low-temperature solution processing, and high potential for lightweight applications. These similarities render them highly attractive for being integrated in mul…
  pubmed Hu Y, Li Q, Jing K, Yu J 等 2026 Feb 置信度 0.82
• Tailoring ordered structures with distorted [TeO(3)] and aligned [ScO(6)] motifs for balanced nonlinear optical properties in rare-earth tellurate crystals.
  Tailoring nonlinear optical (NLO) crystals with a large bandgap and wide transparency extending from ultraviolet (UV) to mid-infrared (IR) wavelengths remains a challenge due to the inherent trade-offs in these properties. Here, we report two novel scandium te…
  pubmed Wang X, Zhang T, Zhao H, Jia N 等 2026 置信度 0.82
• Synergistic regulation of polarization intensity and coercive electric field in FeFETs: overcoming the trade-off between enhanced memory window and subthreshold swing degradation.
  Ferroelectric field-effect transistors (FeFETs), a type of ferroelectric memory with a transistor-based structure, have attracted significant attention from integrated circuit researchers due to their compact device architecture, non-destructive readout capabi…
  pubmed Zhang S, Peng Y, Ma W, Wu Q 等 2026 Jan 30 置信度 0.82
• Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics.
  Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide bandgap makes it an interesting candidate for r…
  pubmed Gsponer A, Onder S, Gundacker S, Burin J 等 2025 置信度 0.82
• Self-Powered Ultraviolet Photonic Synapses for Neuromorphic Vision.
  Inspired by biological neuromorphic systems, optoelectronic synapses have garnered significant attention for neuromorphic visual information processing owing to their high propagation speed, broad bandwidth, and low power consumption. To address the complexity…
  pubmed Li C, Zhang Q, Sun J, Cao K 等 2025 Dec 18 置信度 0.82
• Heterointerface-Functionalized Photoelectric Response of Metal-Oxide Schottky Photodiode for Intelligent Fire Detection.
  Ultraviolet photodetectors (UV-PDs) based on wide-bandgap oxide semiconductors (OSs) hold broad prospects in scientific, civil, and especially fire alarm applications. However, the hotly pursued flexible and hetero-integration capabilities are hindered by the …
  pubmed Cai Y, Zheng Z, Zhong Z, Zhang Y 等 2026 置信度 0.82
• NIR-II-Photopyroelectric Catalysis for Immunoactivation/Ferroptosis Combined Therapy of Tumor.
  Second near-infrared (NIR-II) light is desired to drive photocatalytic therapy owing to its high tissue penetrability and operationality, but the efficiency of direct NIR-II-photocatalytic H 2 generation is negligible owing to a trade-off between narrow semico…
  pubmed Xia C, Chen S, Xu X, Zhao B 等 2026 Jan 22 置信度 0.82
• Construction and Structure Tailoring of Versatile Metal Halide Perovskite Composites for Photocatalysis.
  Photocatalytic technologies are essential for addressing energy and environmental challenges. Metal halide perovskites (MHPs) have emerged as promising photocatalysts owing to their adjustable bandgaps, high efficiency, and broad visible-light absorption capab…
  pubmed Khan S, Khan S, Khan J, Ali N 等 2025 Nov 29 置信度 0.82
• Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC.
  Gallium oxide (Ga₂O₃) is emerging as a promising semiconductor for next-generation power and radio-frequency electronics due to its ultra-wide bandgap and high breakdown field. Yet, its intrinsic thermal conductivity is extremely low, which cause…
  pubmed Shen Y, Qi X, Li Y, Guo Y 等 2025 置信度 0.82
• Multidimensional defect identification of semiconductors in nonequilibrium.
  While the static theory for understanding defect properties in semiconductors in equilibrium has been established for decades, it fails to identify the crucial defects in nonequilibrium, such as under irradiation. In this paper, we develop a robust ab initio-d…
  pubmed Liu J, Gao Y, Yan X, Li Y 等 2025 置信度 0.82
• SnSe(1-x)S(x) Alloys: Anisotropic Van der Waals Semiconductors with Tunable Bandgaps.
  Alloying is one of the main tools of bandgap engineering, allowing the tuning of crystal structure, lattice parameters, and electronic structure of 3D and 2D/layered semiconductors. Among the latter, it can play a key role in tailoring the properties of tin mo…
  pubmed Sutter P, Barinov A, Komsa HP, Ghimire P 等 2026 Jan 置信度 0.82
• A Subsampling Phase-Locked Loop with a Dual Charge Pump Based on Capacitor Multipliers for CMOS Image Sensor.
  Traditional zero-compensation techniques employed to improve sub-sampling phase-locked loop (SSPLL) stability often exacerbate spur degradation or incur excessive area overhead, rendering them unsuitable for high-resolution image sensor applications. This pape…
  pubmed Lin Y, Wang B, Jin L, Tang Z 等 2025 Nov 10 置信度 0.82
• Fabrication Process Development for Optical Channel Waveguides in Sputtered Aluminum Nitride.
  Aluminum nitride (AlN) is a wide-bandgap semiconductor (6.2 eV) with a broad transparency window spanning from the ultraviolet (UV) to the mid-infrared (MIR) wavelength region, making it a promising material for integrated photonics. In this work, AlN thin fil…
  pubmed Mardani S, Jongebloed B, Hendriks WAPM, Dijkstra M 等 2025 Nov 6 置信度 0.82
• Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation.
  This paper investigates the degradation of 28 nm technology NMOS devices under high-temperature and high-field conditions following heavy-ion irradiation. The effects of stress time, stress magnitude, temperature, device structural dimensions, and heavy-ion ra…
  pubmed Cao Y, Zhang Z, Zhang L, Li M 等 2025 Oct 25 置信度 0.82