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• TiO2 based long-range ordered crystals (LROCs) for recyclable SERS applications
  Semiconductors have established a great potential for applications requiring photocatalytic degradation of organic materials due to their ability to generate electron-hole pairs under photo-excitation and form radicals. These radicals can attack organic molecu…
  datacite Korcoban, Dilek 2024 置信度 0.66 Inorganic materials (incl. nanomaterials)PhotochemistryWastewater treatment processes
• Chemical and structural stability of liquid-phase-exfoliated (LPE) two-dimensional (2D) materials
  Atomically thin two-dimensional (2D) materials have gathered massive attention owing to their unique properties that could benefit both the conventional semiconductor industry and wide-ranging nanotechnology-enable applications. At the atomically thin regime, …
  datacite Ingle, Aviraj 2024 置信度 0.66 Structure and dynamics of materials
• Heterojunction of Bi2Se3 and Epitaxially Grown GaN Nanostructures on Oxide-Based Substrates for Self-Powered Broadband Photodetectors
  Over the past decades, in addition to conventional Si-based devices, significant efforts have been made to explore stable compound semiconductor materials (SiC, III-V compounds, and various oxides) and their applications. Among these, GaN-based devices have be…
  datacite Aggarwal, Vishnu 2025 置信度 0.66 Photonics, optoelectronics and optical communicationsNanomaterials
• Photoemission Physics of Wide-Bandgap Semiconductors: An Empirical Development in Photocathode Theory
  For photoinjector applications, a photocathode with a low intrinsic emittance (i.e. low emitted beam divergence) and high quantum yield (i.e. number of emitted electrons per absorbed photon) is desired and, implicitly, physical robustness and reasonable cost a…
  datacite Angeloni, Louis A 2025 置信度 0.66
• Photoemission Physics of Wide-Bandgap Semiconductors: An Empirical Development in Photocathode Theory
  For photoinjector applications, a photocathode with a low intrinsic emittance (i.e. low emitted beam divergence) and high quantum yield (i.e. number of emitted electrons per absorbed photon) is desired and, implicitly, physical robustness and reasonable cost a…
  datacite Angeloni, Louis A 2025 置信度 0.66
• <b>TOPOLOGICAL AND QUANTUM TRANSPORT IN CHIRAL TWO-DIMENSIONAL TELLURIUM</b>
  Tellurium (Te) stands out as an elemental narrow-bandgap semiconductor characterized by its distinctive chiral crystal structure. The interplay between fundamental symmetries and the topological properties of electrons has garnered significant attention in the…
  datacite Niu, Chang 2024 置信度 0.66 Electronic and magnetic properties of condensed matter; superconductivity
• <b>TOPOLOGICAL AND QUANTUM TRANSPORT IN CHIRAL TWO-DIMENSIONAL TELLURIUM</b>
  Tellurium (Te) stands out as an elemental narrow-bandgap semiconductor characterized by its distinctive chiral crystal structure. The interplay between fundamental symmetries and the topological properties of electrons has garnered significant attention in the…
  datacite Niu, Chang 2024 置信度 0.66 Electronic and magnetic properties of condensed matter; superconductivity
• <strong>Synergistic Bandgap and Heterojunction Engineering in YbSnO Thin Films for High-Performance Self-Powered Solar-Blind Photodetection</strong>
  Exploring semiconductor materials with suitable bandgaps and chemical stability is crucial for constructing solar-blind ultraviolet (SBUV) photodetectors with high stability, high responsivity, and high detectivity. However, the scarcity of suitable material s…
  datacite Liu, Yumin, Lai, Qiuling, Hu, Qichang, Chen, Dagui 等 2026 置信度 0.66 Physical sciencesFOS: Physical sciences
• Enhancing the Thin-Film Properties of Hetero-Epitaxial α-Ga₂O₃for Scalable Deep Ultraviolet Photodetectors
  α-Ga 2 O 3 , a wide-bandgap semiconductor, has emerged as a promising material for diverse applications. This study presents a high-performance deep-ultraviolet (DUV) photodetector (PD) based on a hetero-epitaxial α-Ga 2 O 3 thin film with reduced defects. The…
  datacite Kim, Sunjae, Jeon, Dae-Woo, Shin, Myunghun, Park, Ji-Hyeon 等 2026 置信度 0.66 Engineering
• Enhancing the Thin-Film Properties of Hetero-Epitaxial α-Ga₂O₃for Scalable Deep Ultraviolet Photodetectors
  α-Ga 2 O 3 , a wide-bandgap semiconductor, has emerged as a promising material for diverse applications. This study presents a high-performance deep-ultraviolet (DUV) photodetector (PD) based on a hetero-epitaxial α-Ga 2 O 3 thin film with reduced defects. The…
  datacite Kim, Sunjae, Jeon, Dae-Woo, Shin, Myunghun, Park, Ji-Hyeon 等 2026 置信度 0.66 Engineering
• ULTRATHIN INDIUM-BASED SEMICONDUCTORS FOR BACK-END-OF-LINE LOGIC AND MEMORY APPLICATIONS
  As the semiconductor technology pushed to 3 nm node and beyond, more and more effort has been input on the investigation of advanced device structures and package technologies such as gate-all-around, vertical stack, and monolithic 3D etc., as well as innovati…
  datacite Zheng, Dongqi 2023 置信度 0.66 MicroelectronicsRadio frequency engineeringCompound semiconductorsNanoelectronics
• ULTRATHIN INDIUM-BASED SEMICONDUCTORS FOR BACK-END-OF-LINE LOGIC AND MEMORY APPLICATIONS
  As the semiconductor technology pushed to 3 nm node and beyond, more and more effort has been input on the investigation of advanced device structures and package technologies such as gate-all-around, vertical stack, and monolithic 3D etc., as well as innovati…
  datacite Zheng, Dongqi 2023 置信度 0.66 MicroelectronicsRadio frequency engineeringCompound semiconductorsNanoelectronics
• Atomically Thin Indium Oxide Transistors for Back-end-of-line Applications
  As thefundamentallimits of two-dimensional(2D)geometric scaling of commercial transistors are being reached, there is tremendous demand for new materials and process innovations that can keep delivering performance improvements for future generations of comput…
  datacite Charnas, Adam R 2022 置信度 0.66 MicroelectronicsNanoelectronicsCompound semiconductors
• Atomically Thin Indium Oxide Transistors for Back-end-of-line Applications
  As thefundamentallimits of two-dimensional(2D)geometric scaling of commercial transistors are being reached, there is tremendous demand for new materials and process innovations that can keep delivering performance improvements for future generations of comput…
  datacite Charnas, Adam R 2022 置信度 0.66 MicroelectronicsNanoelectronicsCompound semiconductors
• Reliability Characterizations of Power Transistors: From Silicon to Oxide Semiconductors
  Semiconductor power electronics find widespread use in miscellaneous applications, including power management in smart grids, electrical motors in self-driving cars, satellite power systems, and so on. In these high voltage systems, it is inevitable that the r…
  datacite Chen, Yen-Pu 2021 置信度 0.66 Microelectronics
• Reliability Characterizations of Power Transistors: From Silicon to Oxide Semiconductors
  Semiconductor power electronics find widespread use in miscellaneous applications, including power management in smart grids, electrical motors in self-driving cars, satellite power systems, and so on. In these high voltage systems, it is inevitable that the r…
  datacite Chen, Yen-Pu 2021 置信度 0.66 Microelectronics
• A Heterogeneous Multirate Simulation Approach for Wide-bandgap-based Electric Drive Systems
  Recent developments in semiconductor device technology have seen the advent of wide-bandgap (WBG) based devices that enable operation at high switching frequencies. These devices, such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors…
  datacite Fulani, Olatunji T 2021 置信度 0.66 Electrical engineering not elsewhere classified
• A Heterogeneous Multirate Simulation Approach for Wide-bandgap-based Electric Drive Systems
  Recent developments in semiconductor device technology have seen the advent of wide-bandgap (WBG) based devices that enable operation at high switching frequencies. These devices, such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors…
  datacite Fulani, Olatunji T 2021 置信度 0.66 Electrical engineering not elsewhere classified
• STRUCTURAL AND MATERIAL INNOVATIONS FOR HIGH PERFORMANCE BETA-GALLIUM OXIDE NANO-MEMBRANE FETS
  Beta-gallium oxide ( β -Ga 2 O 3 ) is an emerging wide bandgap semiconductor for next generation power devices which offers the potential to replace GaN and SiC. It has an ultra-wide bandgap (UWBG) of 4.8 eV and a corresponding E br of 8 MV/cm. β -Ga 2 O 3 als…
  datacite Noh, Jinhyun 2021 置信度 0.66 Compound semiconductorsElectrical engineering not elsewhere classified
• STRUCTURAL AND MATERIAL INNOVATIONS FOR HIGH PERFORMANCE BETA-GALLIUM OXIDE NANO-MEMBRANE FETS
  Beta-gallium oxide ( β -Ga 2 O 3 ) is an emerging wide bandgap semiconductor for next generation power devices which offers the potential to replace GaN and SiC. It has an ultra-wide bandgap (UWBG) of 4.8 eV and a corresponding E br of 8 MV/cm. β -Ga 2 O 3 als…
  datacite Noh, Jinhyun 2021 置信度 0.66 Compound semiconductorsElectrical engineering not elsewhere classified
• VERTICAL TRIGATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR IN 4H - SILICON CARBIDE
  Advances in modern technology and recent demand for high power applications have motivated great interest in power electronics. Power semiconductor devices are key components that have enabled significant advances in power electronic systems. Historically, sil…
  datacite ramamurthy, Rahul Padavagodu 2020 置信度 0.66 Electrical engineering not elsewhere classified
• VERTICAL TRIGATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR IN 4H - SILICON CARBIDE
  Advances in modern technology and recent demand for high power applications have motivated great interest in power electronics. Power semiconductor devices are key components that have enabled significant advances in power electronic systems. Historically, sil…
  datacite ramamurthy, Rahul Padavagodu 2020 置信度 0.66 Electrical engineering not elsewhere classified
• Predictive Electro and Thermal Quantum Transport in Nanoscale Devices
  Modern semiconductor devices have reached the sub-20nm regime. Before long, it will be practically impossible to further scale down the size of Si-based MOSFETs due to short channel effects. Novel device geometries (e.g. tri-gate and gate-all-around), device c…
  datacite Chu, Yuanchen 2019 置信度 0.66 Electrical engineering not elsewhere classified
• Predictive Electro and Thermal Quantum Transport in Nanoscale Devices
  Modern semiconductor devices have reached the sub-20nm regime. Before long, it will be practically impossible to further scale down the size of Si-based MOSFETs due to short channel effects. Novel device geometries (e.g. tri-gate and gate-all-around), device c…
  datacite Chu, Yuanchen 2019 置信度 0.66 Electrical engineering not elsewhere classified
• A DESIGN PARADIGM FOR DC GENERATION SYSTEM
  The design of a dc generation system is posed as a multi-objective optimization problem which simultaneously designs the generator and the power converter. The proposed design methodology captures the interaction between various system component models and uti…
  datacite Zhang, Bo 2020 置信度 0.66 Electrical engineering not elsewhere classified
• A DESIGN PARADIGM FOR DC GENERATION SYSTEM
  The design of a dc generation system is posed as a multi-objective optimization problem which simultaneously designs the generator and the power converter. The proposed design methodology captures the interaction between various system component models and uti…
  datacite Zhang, Bo 2020 置信度 0.66 Electrical engineering not elsewhere classified
• Ab Initio Study of Erbium Point Defects in 4H-SiC for Quantum Devices
  Identifying scalable materials systems that exhibit quantum behavior is a central challenge in quantum information science. Point defects in certain wide-bandgap semiconductors are promising in this regard due to the maturity of semiconductor manufacturing and…
  datacite Kuban, Michael 2026 置信度 0.66 Quantum Physics (quant-ph)Computational Physics (physics.comp-ph)FOS: Physical sciencesFOS: Physical sciences
• Design of high-mobility p-type GaN via the piezomobility tensor
  Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which h…
  datacite Chen, Jie-Cheng, Leveillee, Joshua, Van de Walle, Chris G., Giustino, Feliciano 2025 置信度 0.66 nitrideselectron-phonon couplinghole mobility
• Design of high-mobility p-type GaN via the piezomobility tensor
  Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic hole mobility, which h…
  datacite Chen, Jie-Cheng, Leveillee, Joshua, Van de Walle, Chris G., Giustino, Feliciano 2025 置信度 0.66 nitrideselectron-phonon couplinghole mobility
• Comprehensive Optical, Electrical and Humidity Sensing Properties of Bifidobacterium infantis 35624 Thin Films
  In this study, we present a comprehensive investigation of the structural, optical, and electrical properties of Bifidobacterium longum subsp. longum 35624 (BB35) thin films, and demonstrate their application as a novel relative humidity sensor. UV-Visible spe…
  datacite Ozturk, S., Tatlipinar, H., Bozkurt, K., Ozdemir, O. 等 2026 置信度 0.66 Applied Physics (physics.app-ph)Biological Physics (physics.bio-ph)FOS: Physical sciencesFOS: Physical sciences
• <strong>Heteroepitaxial Integration of α-Ga₂O₃/p-NiO by Mist-CVD for Solar-Blind UV detection</strong>
  Solar-blind ultraviolet (SBUV) photodetection is critically demanded in military and civil fields thanks to its near-zero background radiation. Gallium oxide (Ga 2 O 3 ) emerges as an ideal wide-bandgap semiconductor for SBUV and power devices thanks to its su…
  datacite Li, Hansheng, Wang, Xuan, Deng, Baosen, Long, Meili 等 2026 置信度 0.66 Physical sciencesFOS: Physical sciences
• <strong>Heteroepitaxial Integration of α-Ga₂O₃/p-NiO by Mist-CVD for Solar-Blind UV detection</strong>
  Solar-blind ultraviolet (SBUV) photodetection is critically demanded in military and civil fields thanks to its near-zero background radiation. Gallium oxide (Ga 2 O 3 ) emerges as an ideal wide-bandgap semiconductor for SBUV and power devices thanks to its su…
  datacite Li, Hansheng, Wang, Xuan, Deng, Baosen, Long, Meili 等 2026 置信度 0.66 Physical sciencesFOS: Physical sciences
• <strong>Substrate interface plasmonic resonance mode of metal nanodisk on high-index wide bandgap semiconductors: overlapping frequency from near UV to VUV band</strong>
  Due to large near-field enhancement and strong light scattering and absorption effects, metal plasmonic nanoparticles offer potential route for advancing the semiconductor photodetectors(PDs) performance. However, the common high-index semiconductors substrate…
  datacite Xu, Leilei, Chu, Xu, Xie, Liangshuai, Dai, shige 等 2026 置信度 0.66 Physical sciencesFOS: Physical sciences
• <strong>Substrate interface plasmonic resonance mode of metal nanodisk on high-index wide bandgap semiconductors: overlapping frequency from near UV to VUV band</strong>
  Due to large near-field enhancement and strong light scattering and absorption effects, metal plasmonic nanoparticles offer potential route for advancing the semiconductor photodetectors(PDs) performance. However, the common high-index semiconductors substrate…
  datacite Xu, Leilei, Chu, Xu, Xie, Liangshuai, Dai, shige 等 2026 置信度 0.66 Physical sciencesFOS: Physical sciences
• Understanding the anisotropic response of $β$-Ga$_2$O$_3$ to ion implantation
  While $β$-Ga$_2$O$_3$ is considered a promising wide bandgap semiconductor, the impact of ion-induced defect formation and anisotropic elasticity remains poorly understood. Here, we combine a simulation and experiment X-ray diffraction (XRD) study of the strai…
  datacite Esteves, Duarte Magalhães, He, Ru, Magalhães, Sérgio, Sequeira, Miguel Carvalho 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciencesFOS: Physical sciences
• Low-temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces
  Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described. We consider both surface which do not possess surface states within the bulk bandgap, such as GaAs(110), and surfaces which do have states within the gap, such…
  datacite Feenstra, Randall, Meyer, G., Moresco, F., Rieder, K. H. 2003 置信度 0.66 Classical physics not elsewhere classified
• Low-temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces
  Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described. We consider both surface which do not possess surface states within the bulk bandgap, such as GaAs(110), and surfaces which do have states within the gap, such…
  datacite Feenstra, Randall, Meyer, G., Moresco, F., Rieder, K. H. 2003 置信度 0.66 Classical physics not elsewhere classified
• Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics
  Gallium nitride (GaN) MOSCAPs and MOSFETs are often investigated for high-power applications ranging from electric vehicles to photovoltaic invertors and smart electric grids. The specific material properties of GaN, including its wide bandgap, higher obtainab…
  datacite Materials Research Society 2023, Binder, Andrew, Dickens, Peter, Feezell, Daniel 等 2023 置信度 0.66 Electronic Devices and MaterialsElectrical and Electronic EngineeringFOS: Electrical engineering, electronic engineering, information engineeringEngineering
• Reverse Breakdown Time of Wide Bandgap Diodes
  In order to evaluate the time evolution of avalanche breakdown in wide and ultra-wide bandgap devices, we have developed a cable pulser experimental setup that can evaluate the time-evolution of the terminating impedance for a semiconductor device with a time …
  datacite IEEE Electron Device Society 2022, Jack, Flicker, Kaplar, Robert, Schrock, Emily 2022 置信度 0.66 Power Electronics
• Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs
  This study analyzes the changes in the density of interface traps (DIT) for various atomic layer deposition (ALD) gate dielectric films on gallium nitride (GaN) devices fabricated on bulk GaN substrates. Each film type has been chosen with an optimized insulat…
  datacite Materials Research Society 2022, Allerman, Andrew, Binder, Andrew, Feezell, Daniel 等 2022 置信度 0.66 Electronic Devices and MaterialsPhysicsMaterials SciencePlasma PhysicsSemiconductor
• HighScape - Report on family of WBG-based integrated traction inverters with dynamically reconfigurable windings and innovative cooling solutions (D3.3)
  This report, part of the Horizon Europe-funded HighScape project, presents a comprehensive study on innovative traction inverter systems for electric vehicles (EVs) based on wide bandgap (WBG) semiconductors. The focus is on dynamically reconfigurable windings…
  datacite Verkroost, Lynn, Soltani Gohari, Homayoun, Vansompel, Hendrik 2026 置信度 0.66
• HighScape - Report on family of WBG-based integrated traction inverters with dynamically reconfigurable windings and innovative cooling solutions (D3.3)
  This report, part of the Horizon Europe-funded HighScape project, presents a comprehensive study on innovative traction inverter systems for electric vehicles (EVs) based on wide bandgap (WBG) semiconductors. The focus is on dynamically reconfigurable windings…
  datacite Verkroost, Lynn, Soltani Gohari, Homayoun, Vansompel, Hendrik 2026 置信度 0.66
• Study on the Effect of Annealing on Ga$_2$O$_3$ Thin Films Deposited on Silicon by RF Sputtering
  Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices. In this article, we report how the optical, morphological, structural, and compo…
  datacite Sousa, Ana Sofia, Esteves, Duarte M., Robalo, Tiago T., Rodrigues, Mário S. 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciencesFOS: Physical sciences
• Nitrogen Organizes Electronic Structure in Diamond Defects: VQE Ensemble Data and Boundary Conditions of σ-Asymmetry Diagnostic
  Title: Nitrogen Organizes Electronic Structure in Diamond Defects: VQE Ensemble Data and Boundary Conditions of σ-Asymmetry Diagnostic Authors: Brahmbhatt, Amit (Quantum Clarity LLC) Abstract This dataset reports Variational Quantum Eigensolver (VQE) ensemble …
  datacite Brahmbhatt, Amit 2026 置信度 0.66 variational quantum eigensolver, VQE, NV center, diamond defect, nitrogen-vacancy, quantum defects, NV center physics, σ-asymmetry, electronic complexity, electronic structure, static correlation, N₂ dissociation, quantum coherence, multi-reference, optimization landscape, inter-seed variance, sector enforcement, GPU quantum chemistry, IBM quantum hardware, Heron-2, strongly correlated electrons, orbital organization, basin analysis
• Nitrogen Organizes Electronic Structure in Diamond Defects: VQE Ensemble Data and Boundary Conditions of σ-Asymmetry Diagnostic
  Title: Nitrogen Organizes Electronic Structure in Diamond Defects: VQE Ensemble Data and Boundary Conditions of σ-Asymmetry Diagnostic Authors: Brahmbhatt, Amit (Quantum Clarity LLC) Abstract This dataset reports Variational Quantum Eigensolver (VQE) ensemble …
  datacite Brahmbhatt, Amit 2026 置信度 0.66 variational quantum eigensolver, VQE, NV center, diamond defect, nitrogen-vacancy, quantum defects, NV center physics, σ-asymmetry, electronic complexity, electronic structure, static correlation, N₂ dissociation, quantum coherence, multi-reference, optimization landscape, inter-seed variance, sector enforcement, GPU quantum chemistry, IBM quantum hardware, Heron-2, strongly correlated electrons, orbital organization, basin analysis
• Photoluminescence excitation spectroscopy of quantum wire-like dislocation states in ZnS
  Recent \textit{ab initio} calculations predict 1D dispersive electronic bands confined to the atomic scale cores of dislocations in the wide bandgap (3.84 eV) semiconductor ZnS. We test these predictions by correlating sub-bandgap optical transitions with the …
  datacite Blackston, Alexander, Montenegro, Alexandra Fonseca, Genlik, Sevim Polat, Ghazisaeidi, Maryam 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• PEG- and PVP-assisted wet-chemical synthesis of ZnS quantum dots via hydrothermal and co-precipitation methods for route-dependent structural and bandgap tuning
  Zinc sulphide (ZnS) is a non-toxic, wide-bandgap II-VI semiconductor with well-established optoelectronic properties. This work presents a systematic, concentration-dependent comparison of PEG and PVP across two scalable aqueous routes, linking ligand chemistr…
  datacite Ahmad, Rao Uzair, Javed, Nasir, Sher, Falak 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• 3D Investigation of Structural Defects in Cz-grown β-Ga₂O₃Single Crystals by Dark Field X-ray Microscopy
  β-Ga₂O₃ is an emerging ultra-wide bandgap semiconductor with significant potential for high-power electronics and optoelectronics. However, crystalline defects such as dislocations and stacking faults in grown wafers limit the device performance. In this study…
  datacite Is, Ali Arman, Kabukcuoglu, Merve Pinar, Richter, Carsten 2029 置信度 0.66 Applied Material ScienceMA-6767ID03
• Demonstration of High-Performance Ultra-Wide Bandgap SrSnO$_3$ Top-Gated MOSFETs
  We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited Hf…
  datacite Koo, Junghyun, Sun, Weideng, Kim, Donghwan, Lee, Hongseung 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Controlled MOVPE growth of sp2-bonded BAlN alloys: Influence of precursor injection schemes on crystal structure and optical properties
  Data related to the figures presented in the manuscript: Controlled MOVPE growth of sp2-bonded BAlN alloys: Influence of precursor injection schemes on crystal structure and optical properties.Summary of the research:Hexagonal boron nitride (hBN) is a promisin…
  datacite Iwański, Jakub 2026 置信度 0.66
• Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
  The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but…
  datacite Xing, Kaijian, Yang, Zherui, Zhao, Weiyao, Yin, Yuefeng 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• MODERN POWER CONVERTERS WITH WIDE-BANDGAP DEVICES FOR RENEWABLE GRID INTERFACES: A HIGH-FREQUENCY, MULTILEVEL ARCHITECTURE FOR ULTRA-EFFICIENT ENERGY TRANSFER AND THERMAL RELIABILITY
  As renewable energy systems expand globally, the demand for efficient, compact, and thermally reliable power converters has intensified. This paper explores the integration of wide-bandgap (WBG) semiconductor devices, such as SiC and GaN, into high-frequency, …
  datacite Researcher 2025 置信度 0.66 wide-bandgap semiconductors, high-frequency converters, GaN, SiC, multilevel architecture, renewable energy, thermal reliability, energy efficiency
• MODERN POWER CONVERTERS WITH WIDE-BANDGAP DEVICES FOR RENEWABLE GRID INTERFACES: A HIGH-FREQUENCY, MULTILEVEL ARCHITECTURE FOR ULTRA-EFFICIENT ENERGY TRANSFER AND THERMAL RELIABILITY
  As renewable energy systems expand globally, the demand for efficient, compact, and thermally reliable power converters has intensified. This paper explores the integration of wide-bandgap (WBG) semiconductor devices, such as SiC and GaN, into high-frequency, …
  datacite Researcher 2025 置信度 0.66 wide-bandgap semiconductors, high-frequency converters, GaN, SiC, multilevel architecture, renewable energy, thermal reliability, energy efficiency
• <strong>Halide vapor phase epitaxy of a thick <em>c</em>-plane α-Ga₂O₃ film on a high-quality α-Cr₂O₃/sapphire template</strong>
  α-Ga 2 O 3 is a promising ultra-wide-bandgap semiconductor for future power devices, and the use of α-Cr 2 O 3 buffer layers represents an effective approach to improve the crystalline quality of heteroepitaxial α-Ga 2 O 3 films owing to the small lattice mism…
  datacite Oshima, Yuichi, Tomita, Takahiro, Imai, Katsuhiro, Oshima, Takayoshi 等 2026 置信度 0.66 Engineering
• <strong>Halide vapor phase epitaxy of a thick <em>c</em>-plane α-Ga₂O₃ film on a high-quality α-Cr₂O₃/sapphire template</strong>
  α-Ga 2 O 3 is a promising ultra-wide-bandgap semiconductor for future power devices, and the use of α-Cr 2 O 3 buffer layers represents an effective approach to improve the crystalline quality of heteroepitaxial α-Ga 2 O 3 films owing to the small lattice mism…
  datacite Oshima, Yuichi, Tomita, Takahiro, Imai, Katsuhiro, Oshima, Takayoshi 等 2026 置信度 0.66 Engineering
• Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
  Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and compatibility with indust…
  datacite Younesi, Ali Tayefeh, Luu, Minh Tuan, Linderälv, Christopher, Žalandauskas, Vytautas 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Model Predictive Control of High-Efficiency Motor Drives for Electric Mobility
  The rapid growth of electric mobility has intensified the demand for high-efficiency motor drives that can maximize energy utilization, extend battery life, and improve overall vehicle performance. Traditional motor control strategies, such as Field-Oriented C…
  datacite Martínez-Torrez, Daniela, zhang, wei liang 2023 置信度 0.66 Model Predictive Control (MPC)Electric Vehicles (EVs)High-Efficiency Motor DrivesTorque Ripple Reduction,Power Electronics
• Model Predictive Control of High-Efficiency Motor Drives for Electric Mobility
  The rapid growth of electric mobility has intensified the demand for high-efficiency motor drives that can maximize energy utilization, extend battery life, and improve overall vehicle performance. Traditional motor control strategies, such as Field-Oriented C…
  datacite Martínez-Torrez, Daniela, zhang, wei liang 2023 置信度 0.66 Model Predictive Control (MPC)Electric Vehicles (EVs)High-Efficiency Motor DrivesTorque Ripple Reduction,Power Electronics
• Advanced Thermal Management Techniques for High-Power Density EV Converters
  The rapid evolution of electric vehicle (EV) technology has intensified the demand for high-power density power converters capable of delivering superior efficiency, compactness, and reliability. As switching frequencies increase and wide bandgap semiconductor…
  datacite Thompson, Michael, Aisha Rahman 2023 置信度 0.66 High-power density convertersElectric vehicle (EV) power electronicsAdvanced thermal managementElectro-thermal modelingMicrochannel cooling
• Advanced Thermal Management Techniques for High-Power Density EV Converters
  The rapid evolution of electric vehicle (EV) technology has intensified the demand for high-power density power converters capable of delivering superior efficiency, compactness, and reliability. As switching frequencies increase and wide bandgap semiconductor…
  datacite Thompson, Michael, Aisha Rahman 2023 置信度 0.66 High-power density convertersElectric vehicle (EV) power electronicsAdvanced thermal managementElectro-thermal modelingMicrochannel cooling
• <strong>High-speed, High-Resolution, Three-Dimensional Imaging of Threading Dislocations in β-Ga₂O₃ via Phase-Contrast Microscopy</strong>
  This study presents a nondestructive and laboratory-accessible approach for high-speed, high-resolution three-dimensional characterization of threading dislocations in β-Ga₂O₃ (010) single crystals using phase-contrast microscopy (PCM). Accurate wafer-scale ev…
  datacite Katsube, Daiki, Sato, Koji, Ishikawa, Yukari, YAO, Yongzhao 等 2026 置信度 0.66 Engineering
• Metal oxide-based, nano-structured catalyst materials for water oxidation
  Hydrogen has the potential to revolutionalise the transportation fuels market towards a greener future. (Photo)electrocatalytic water splitting into oxygen and hydrogen, at present, is one of the most promising technologies that could render large-scale hydrog…
  datacite Fekete, Monika 2017 置信度 0.66
• Metal oxide-based, nano-structured catalyst materials for water oxidation
  Hydrogen has the potential to revolutionalise the transportation fuels market towards a greener future. (Photo)electrocatalytic water splitting into oxygen and hydrogen, at present, is one of the most promising technologies that could render large-scale hydrog…
  datacite Fekete, Monika 2017 置信度 0.66
• Novel wide bandgap semiconductor detectors usingTiO2 for proton beam monitoring in COMET experiment at J-PARC
  Fatigue is a multiscale phenomenon, with the fingerprints of crack initiation and growth span over microscale to macroscale. A comprehensive understanding of fatigue behaviour requires bridging analyses across these length scales. This study aims to establish …
  datacite Chetry, Pankaj 2025 置信度 0.66 Elemental semiconductorsCondensed matter physics not elsewhere classifiedParticle physicsSensor technology (incl. chemical aspects)
• Novel wide bandgap semiconductor detectors usingTiO2 for proton beam monitoring in COMET experiment at J-PARC
  Fatigue is a multiscale phenomenon, with the fingerprints of crack initiation and growth span over microscale to macroscale. A comprehensive understanding of fatigue behaviour requires bridging analyses across these length scales. This study aims to establish …
  datacite Chetry, Pankaj 2025 置信度 0.66 Elemental semiconductorsCondensed matter physics not elsewhere classifiedParticle physicsSensor technology (incl. chemical aspects)
• Orbital-resolved anisotropic electron pockets in electron-doped SrTiO3 observed by ARPES
  SrTiO3 has attracted considerable interest as a wide-band gap semiconductor for advanced high-k capacitors and photocatalytic applications. Although previous angle-resolved photoemission spectroscopy (ARPES) studies have characterized the valence band structur…
  datacite Wakabayashi, Yuki K., Munakata, Akihira, Taniyasu, Yoshitaka, Kobayashi, Masaki 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Exploring the Design and Measurements of Next-Generation 4H-SiC LGADs
  This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing signal generation. Init…
  datacite Švihra, Peter, Chochol, Jan, Kafka, Vladimír, Klimsza, Adam 等 2025 置信度 0.66 Instrumentation and Detectors (physics.ins-det)FOS: Physical sciencesFOS: Physical sciences
• Nonlinear optical properties of solids from real-time time-dependent density functional theory
  Die Wechselwirkung zwischen Licht und Materie ist ein grundlegendes Thema der Physik, das Phänomene über eine Vielzahl räumlicher und zeitlicher Skalen hinweg umfasst. In dieser Dissertation untersuchen wir diese Wechselwirkungen auf atomarer Ebene und auf ult…
  datacite Chen, Xiao 2026 置信度 0.66 Nichtlineare Optik530
• Devices for blood sampling and DNA sensing
  Microneedles for blood sampling are getting more and more attention in research and commercialization since their advancement in the 1990s due to the advantages over traditional hypodermic needles such as minimum invasiveness, low material and fabrication cost…
  datacite MAMUN, ABDULLA AL 2022 置信度 0.66
• Power electronics and drives engineering advancing electrification automation efficiency electric mobility industrial energy conversion systems applications globally scalable
  Power electronics and drives engineering has emerged as a foundational enabler of global electrification, automation, and energy efficiency, shaping how electrical energy is converted, controlled, and utilised across modern systems. As economies pursue decarbo…
  datacite Boniface, Uchenna Emmanuel 2026 置信度 0.66 Power electronicsElectric drivesElectrificationEnergy efficiencyElectric mobility
• Power electronics and drives engineering advancing electrification automation efficiency electric mobility industrial energy conversion systems applications globally scalable
  Power electronics and drives engineering has emerged as a foundational enabler of global electrification, automation, and energy efficiency, shaping how electrical energy is converted, controlled, and utilised across modern systems. As economies pursue decarbo…
  datacite Boniface, Uchenna Emmanuel 2026 置信度 0.66 Power electronicsElectric drivesElectrificationEnergy efficiencyElectric mobility
• Photonic Chip Integrated Photodetector for Microwave Photonics
  Integrated photonics has experienced significant growth over recent decades, supporting a broad spectrum of applications. Established platforms like silicon and indium phosphide (InP) are now widely accessible through commercial foundries. InP enables monolith…
  datacite Kaur, Paramjeet 2026 置信度 0.66 Photonics, optoelectronics and optical communicationsMicroelectronicsPhotonic and electro-optical devices, sensors and systems (excl. communications)
• Fast-Charging Power Electronics Architectures for Electric Vehicles
  The rapid growth of electric vehicles (EVs) has led to an increased demand for fast-charging technologies capable of reducing charging time while maintaining high efficiency, reliability, and safety. Power electronics plays a critical role in enabling fast cha…
  datacite Sharma, Ankita, Kumar, Rakesh 2023 置信度 0.66 Electric Vehicles (EVs)Fast Charging, Power ElectronicsDC-DC ConvertersSiC/GaN SemiconductorsEfficiency
• Fast-Charging Power Electronics Architectures for Electric Vehicles
  The rapid growth of electric vehicles (EVs) has led to an increased demand for fast-charging technologies capable of reducing charging time while maintaining high efficiency, reliability, and safety. Power electronics plays a critical role in enabling fast cha…
  datacite Sharma, Ankita, Kumar, Rakesh 2023 置信度 0.66 Electric Vehicles (EVs)Fast Charging, Power ElectronicsDC-DC ConvertersSiC/GaN SemiconductorsEfficiency
• Detectors and beam monitors based on wide bandgap semiconductors at cryogenic temperatures
  Wide-bandgap semiconductors, such as single-crystal diamond and sapphire, can be used to measure the flux of passing particles through a particle-induced conductivity effect. We recently demonstrated a diamond-based, electrodeless electron beam halo monitor. T…
  datacite Kuzikov,Sergey, Burrows,Gracie 2026 置信度 0.66 Accelerator Physicsmc6-beam-instrumentation-controls-ai-ml-and-operational-aspects - MC6 - Beam Instrumentation, Controls, AI/ML, and Operational Aspects
• Impact of Wide Bandgap Semiconductors (SiC/GaN) on Next-Generation EV Power Electronics
  The rapid growth of electric vehicles (EVs) has intensified the demand for highly efficient, compact, and reliable power electronic systems capable of supporting higher power densities and faster switching speeds. Conventional silicon-based power semiconductor…
  datacite keller, jonathan, Brooks, Amanda 2023 置信度 0.66 Wide Bandgap SemiconductorsSilicon Carbide (SiC)Gallium Nitride (GaN)Electric Vehicle Power ElectronicsTraction Inverters
• Impact of Wide Bandgap Semiconductors (SiC/GaN) on Next-Generation EV Power Electronics
  The rapid growth of electric vehicles (EVs) has intensified the demand for highly efficient, compact, and reliable power electronic systems capable of supporting higher power densities and faster switching speeds. Conventional silicon-based power semiconductor…
  datacite keller, jonathan, Brooks, Amanda 2023 置信度 0.66 Wide Bandgap SemiconductorsSilicon Carbide (SiC)Gallium Nitride (GaN)Electric Vehicle Power ElectronicsTraction Inverters
• Adsorption of N, He, and Ne on CGe nanoribbons for sensing and optoelectronic applications
  Research into nanomaterials yields numerous exceptional applications in contemporary science and technology. The subject of this investigation is a one-dimensional nanostructure, six atoms wide, featuring hydrogen-functionalized edges. The theoretical foundati…
  datacite Ngoc, Hoang Van 2023 置信度 0.66 FOS: Physical sciencesFOS: Physical sciencesCGe nanoribbonsNitrogenHelium
• Boron-induced Spin-Polarized Defect Complexes towards Efficient Photocatalytic Tetracycline Decomposition and CO2 Conversion
  By employing a non-metal doping strategy, we systematically achieved the stabilization and synergistic modulation of both surface defects and spin polarization within the wide-bandgap semiconductor. This platform is crucial for advancing key applications in bo…
  datacite Wheatley, Andrew, Tan, Yujie, Sun, Ran, Xu, Hui 等 2026 置信度 0.66 3402 Inorganic Chemistry40 Engineering34 Chemical Sciences3406 Physical Chemistry7 Affordable and Clean Energy
• Gallium Oxide Nano-devices
  Ultra-wide bandgap (UWBG) semiconductors are emerging as the next frontier beyond wide bandgap materials, enabling high-power, high-frequency, deep-UV, and extreme-environment electronics. Among these candidates, $\beta$-Ga$_2$O$_3$ is particularly promising b…
  datacite Maciel García, Glen Isaac 2025 置信度 0.66
• Comparative Study of Lateral and Vertical Beta-Ga2O3 Photoconductive Switches via Intrinsic and Extrinsic Optical Triggering
  Gallium oxide (Ga2O3), with its ultra-wide bandgap (approximately 4.8 eV) and high breakdown field (approximately 8 MV per cm), is a leading candidate for photoconductive semiconductor switches (PCSSs) in high-power and high-speed pulsed applications. This wor…
  datacite Jangir, Vikash K., Mazumder, Sudip K. 2025 置信度 0.66 Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• Hybrid III-V/Silicon Quantum Photonic Device Generating Broadband Entangled Photon Pairs
  The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diver…
  datacite Schuhmann, J., Lazzari, L., Morassi, M., Lemaitre, A. 等 2023 置信度 0.66 Optics (physics.optics)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum Physics (quant-ph)FOS: Physical sciencesFOS: Physical sciences
• 4H-SiC MOSFET H3TRB Long-Term Reliability Test
  The rising demand for long-term reliability for transistors in the integrated circuit causes the semiconductor industries to invest the long-term reliability technology in the extreme environment and static characteristics. A semiconductor device's passivation…
  datacite Tsz (jim) Tsoi, James R Phillips, Stephen Bayne 2023 置信度 0.66 Semiconductor Device; Wide-Bandgap; 4H-SiC; Reliability Test
• 4H-SiC MOSFET H3TRB Long-Term Reliability Test
  The rising demand for long-term reliability for transistors in the integrated circuit causes the semiconductor industries to invest the long-term reliability technology in the extreme environment and static characteristics. A semiconductor device's passivation…
  datacite Tsz (jim) Tsoi, James R Phillips, Stephen Bayne 2023 置信度 0.66 Semiconductor Device; Wide-Bandgap; 4H-SiC; Reliability Test
• Comprehensive electrical analysis of interface states in Al 2 O 3 /OH-terminated (111) diamond MOSCap
  Diamond, with its exceptional electrical and thermal characteristics, is a promising wide bandgap material for high-performance electronics in extreme environments. However, the efficiency of diamond-based metal oxide semiconductor devices is often hindered by…
  datacite Argenton, Pietro, Kah, Martin, Eon, David, Pernot, Julien 2026 置信度 0.66 51 Physical Sciences40 Engineering4018 Nanotechnology7 Affordable and Clean Energy
• Devices and applications of square SnO₂ nanotubes grown by mist chemical vapour deposition.
  In this thesis, fabrication techniques have been developed to produce electronic devices, such as resistors, Schottky diodes, and field effect transistors using perfectly square single-crystal nanotubes of tin oxide (SnO₂) grown by mist chemical vapour deposit…
  datacite Adams, Ryan L. 2025 置信度 0.66
• Evaluation of the Imax-fsw-dv/dt Trade-off of High Voltage SiC MOSFETs Based on an Analytical Switching Loss Model
  Advanced high voltage (3.3-15kV) SiC MOSFETs have been developed for future medium voltage converters over the past decade due to their superior performance. In order to better understand the operation limits and potential of these devices, this paper evaluate…
  datacite Hu, Anliang, Biela, Jürgen 2020 置信度 0.66 Power semiconductor deviceWide bandgap devicesSilicon Carbide (SiC)MOSFETSwitching losses
• Novel surface termination for advanced diamond electronics
  Diamond is an interesting semiconductor for high-power and high-frequency devices due to its ultra-wide bandgap, high carrier mobility, and superior thermal conductivity. However, traditional doping is limited by the deep energy levels of most impurities, whic…
  datacite Guo, Qing 2026 置信度 0.66
• Impact of pH on room-temperature synthesis of zinc oxide nanoparticles for developing flexible gas sensors
  This study explores the room-temperature (RT) synthesis of zinc oxide nanoparticles (ZnO NPs) and their integration into flexible gas sensors for environmental applications. ZnO, a group II-VI semiconductor with a wide bandgap (3.0-3.37 eV), is highly sensitiv…
  datacite Al Shboul, Ahmad, Mechai, Fazia, Izquierdo, Ricardo 2025 置信度 0.66
• Defects on surface and interface for photoelectrochemical properties of hematite photoanodes
  Hydrogen is a highly versatile fuel that may become one of the key solutions to face our future energy challenges. Among all these methods for hydrogen production, solar water splitting offers possible advantages regarding components integration, stability and…
  datacite Hu, Yelin 2017 置信度 0.66 Hydrogen economySemiconductor photoelectrochemistryHematitePhotoelectrochemical water splittingSurface
• Power devices and integrated circuits based on 4H-SiC lateral JFETs
  Silicon carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interest for the next-generation power electronics due to its superior electrical properties. Excellent device performance has been repeatedly demonstrated by SiC vertica…
  datacite Su, Ming 2010 置信度 0.66
• Magnesium zinc oxide high voltage thin film transistors
  Energy is one of the most important topics in the 21st century, and solar energy has been a leading technology in the search to replace fossil-fuel energy as a sustainable and clean energy source. In order to provide an energy-efficient, less expensive, and re…
  datacite Hong, Wen-Chiang 2017 置信度 0.66
• MgZnO-based high voltage thin-film transistors
  Thin-film transistors (TFTs) have been widely used in large-area electronic systems such as pixel switching elements for flat panel displays because they can be fabricated at low temperatures with cost-effective processes. Such an operation requires fast drivi…
  datacite Li, Yuxuan 2022 置信度 0.66
• Modeling of interfacial phonon transport and electron-phonon interactions for thermal management in micro/nano-electronics
  High thermal conductivity electronic components with low interfacial thermal resistance are of technological importance and fundamental interest of research. Diamond and cubic polymorph of boron nitride (c-BN) are two promising ultrawide bandgap semiconductor …
  datacite Huang, Xu 2022 置信度 0.66
• Diamond Integration on GaN for Channel Temperature Reduction
  crossref Mohamadali Malakoutian, Runjie Lily Xu, Chenhao Ren, Shubhra Pasayat 等 2021-12-21T21:08:49Z 置信度 0.70
• Quasi van der Waals Epitaxy Nitride Device for Heat Dissipation
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:33:04Z 置信度 0.70
• Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging
  crossref Lisheng Wang, Wenbo Wang, Raymond J. E. Hueting, Gert Rietveld 等 2022-08-22T15:56:20Z 置信度 0.70
• Pulsed laser deposition of wide-bandgap semiconductor thin films
  crossref Donagh O'Mahony, Eduardo de Posada, James G. Lunney, Jean-Paul Mosnier 等 2003-11-17T11:23:24Z 置信度 0.70
• Optical nonlinearity of wide-bandgap semiconductor and insulator nanoparticles in the visible and near-infrared regions of the spectrum
  crossref O. P. Mikheeva, A. I. Sidorov 2004-06-10T11:51:41Z 置信度 0.70
• direct bandgap semiconductor
  Citation: 'direct bandgap semiconductor' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.14005 • License: The IUPAC Gold Book is licensed under Crea…
  crossref 2025-01-02T16:58:49Z 置信度 0.70