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• Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing
  The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and increase eff…
  crossref Osama Saadeh, Ahmad Al-Hmoud, Zakariya Dalala 2020-04-27T04:15:29Z 置信度 0.70
• Wide bandgap compound semiconductors for superior high-voltage power devices
  crossref T.P. Chow, R. Tyagi 2002-12-30T21:26:32Z 置信度 0.70
• Wide Bandgap Semiconductor Devices and Systems for Communications in Extreme Environment
  crossref Rainee N. Simons 2022-09-16T19:42:27Z 置信度 0.70
• Optical properties of epitaxially grown wide bandgap single quantum dots
  crossref Gerd Bacher, Tilmar Kümmell 2009-05-09T06:15:54Z 置信度 0.70
• Thermal Properties of Wide Bandgap Nanowires
  crossref 2022-08-10T14:32:54Z 置信度 0.70
• Analyses of the Properties of the NiO-Doped Ga2O3 Wide-Bandgap Semiconductor Thin Films
  The study began by pre-sintering Ga2O3 powder at 950 °C for 1 h, followed by the preparation of a mixture of Ga2O3 and 12 at% NiO powders to fabricate a source target material. An electron beam (e-beam) system was then used to deposit NiO-doped Ga2O3 thin film…
  crossref Cheng-Fu Yang, En-Chi Tsao, Yi-Wen Wang, Hsin-Pei Lin 等 2024-12-23T08:16:07Z 置信度 0.70
• Recent Advances in Wide-Bandgap Semiconductor Biological and Gas Sensors
  crossref B Chu, C Chang, S Pearton, Jenshan Lin 等 2011-07-13T20:35:11Z 置信度 0.70
• Amorphous Superlattice Structures with Organometallic Ge-C Material as a Wide Bandgap Component
  crossref R. Mazurczyk, M. Gazicki-Lipman, T. Wagner 2009-04-06T20:10:16Z 置信度 0.70
• Optical Properties of Wide Bandgap Nanowires
  crossref 2022-08-10T14:32:54Z 置信度 0.70
• Analysis of Crosstalk and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
  crossref Haihong Qin, Wenlu Wang, Feifei Bu, Zihe Peng 等 2022-01-03T20:18:56Z 置信度 0.70
• Optically-Switched Wide-Bandgap Power Semiconductor Devices and Device-Transition Control
  crossref S. K. Mazumder, A. Mojab, H. Riazmontazer 2013-11-27T05:52:40Z 置信度 0.70
• Novel Pulsed Electromagnet Design with Wide-bandgap Power Semiconductor for Low-field Portable MRI System
  Motivation: Electromagnets in low-field portable MRI systems offer significant advantages due to the adjustable field strength and straightforward architecture. Nonetheless, the development of main field amplifier for such systems remains an area with scant re…
  crossref Aobo Yang, Lei Gu 2025-09-16T16:18:36Z 置信度 0.70
• Excitonic waveguiding and lasing in wide bandgap semiconductor
  crossref N. N. Ledentsov 2002-07-27T06:21:05Z 置信度 0.70
• Mechanical Properties of Wide Bandgap Nanowires
  crossref 2022-08-10T14:32:54Z 置信度 0.70
• Electrical Properties of Wide Bandgap Nanowires
  crossref 2022-08-10T14:32:54Z 置信度 0.70
• Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
  crossref Kimimori Hamada 2009-03-11T16:10:35Z 置信度 0.70
• Shedding Light on Wide Bandgap Perovskites
  crossref Michael Saliba 2024-03-12T12:24:58Z 置信度 0.70
• Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material
  crossref Rajput Priti J., Udayan S. Patankar, Ants Koel, V. N. Nitnaware 2018-05-16T00:30:21Z 置信度 0.70
• Laser direct write doping of wide-bandgap semiconductor materials
  crossref I.A. Salama, N.R. Quick, A. Kar 2004-11-30T19:56:05Z 置信度 0.70
• Comparative Study of Typical Wide-Bandgap Power Semiconductor Materials: SiC, GaN and Ga₂O₃
  Wide-bandgap semiconductor materials, such as silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga₂O₃), are revolutionizing power electronics technology with their excellent physical properties. In this paper, the similarities and differences am…
  crossref Xinlan Ma 2026-08-23T17:49:54Z 置信度 0.70
• Device-Level Modeling of Wide and Ultra-Wide Bandgap Semiconductor Schottky Barrier Diodes
  crossref Takaya Sugiura 2025-11-27T18:57:07Z 置信度 0.70
• Index to Volume 10
  crossref 2004-09-14T00:25:33Z 置信度 0.70
• A novel electro-thermal model for wide bandgap semiconductor based devices
  crossref C. Sintamarean, F. Blaabjerg, H. Wang 2013-10-21T22:13:52Z 置信度 0.70
• Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor
  crossref Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa 等 2017-05-12T22:30:49Z 置信度 0.70
• Design of Digitalized Vehicle Light Illumination System Using GaN-Based Semiconductor Laser Diode
  crossref He Jiang, Yunpeng Wu, Ti Sun, Feng Xu 等 2025-01-16T18:34:15Z 置信度 0.70
• Index to Volume 9, 2002
  crossref 2009-04-02T13:03:58Z 置信度 0.70
• Curvature-Adaption Termination with for Wide-Bandgap Semiconductors Vertical Power Devices
  crossref Hang Su, Li Zheng, Lingyan Shen, Xuetong Zhou 等 2025-01-16T18:34:15Z 置信度 0.70
• Wide bandgap and ultra-wide bandgap semiconductors
  crossref Yue Hao, Fengyi Jiang 2021-12-22T16:34:39Z 置信度 0.70
• The operating life of a wide-bandgap power device over a wide temperature range
  crossref Pinjia Zhang, Yanyong Yang 2024-03-22T09:33:17Z 置信度 0.70
• First-principles calculations to examine structural, magnetic, mechanical, electronic and optical properties of wide bandgap semiconductor Gadolinium Aluminum Oxide perovskite GdAlO3
  crossref A.E. Kourdaci, I. Bourachid, H. Bouafia, K. Mecheri 等 2024-02-01T20:33:53Z 置信度 0.70
• High power deep ultraviolet radiation generation from short pulse laser induced electron–hole pair production in a wide bandgap semiconductor
  crossref Pawan Kumar, Maitri Libber, Madan Lal, Deepak Kumar 等 2024-09-16T08:04:08Z 置信度 0.70
• Reliability optimization for wide bandgap devices: Recent developments in high-spatial resolution thermal imaging of GaN devices
  crossref M. Kuball, M.J. Uren, T. Martin 2006-03-10T11:50:57Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-06-19T21:29:08Z 置信度 0.70
• GaN/SiC Wide-Bandgap Semiconductor Terahertz Active Devices: Design Methodologies, Performance Optimization, and Technical Bottlenecks
  Terahertz (THz) and sub-terahertz (sub-THz) technologies have become the key enabling technologies for sixth-generation (6G) mobile communications, high-resolution sensing, and ultra-high-speed short-range links, owing to their abundant spectrum resources and …
  crossref Xiting Lin 2026-06-23T06:40:31Z 置信度 0.70
• Self-assembled periodic nanostructures embedded in wide bandgap semiconductor
  crossref Y. Shimotsuma, Y. Nakanishi, M. Skakura, K. Miura 2017-11-30T22:06:18Z 置信度 0.70
• Polytypic heterojunctions for wide bandgap semiconductor materials
  crossref M. Shenkin, O. Korolkov, T. Rang, G. Rang 2015-03-17T10:30:51Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-04-17T18:34:59Z 置信度 0.70
• Index to Volume 8, 2001
  crossref 2009-04-02T13:03:27Z 置信度 0.70
• Irradiation effects on high aluminum content AlGaN channel devices
  crossref Patrick Carey, Fan Ren, Jinho Bae, Jihyun Kim 等 2020-10-01T10:23:35Z 置信度 0.70
• Electrical Properties and Related Mechanisms of Gan Heterostructures Used in High Electron Mobility Transistors
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• Partial Discharge Detection of High Voltage Wide-bandgap Semiconductor Module Based on Common Mode Fault Current
  crossref Penghao Zhang, Liang Yu, Xinzhu Yan, Shoulong Dong 等 2025-03-03T18:28:12Z 置信度 0.70
• The potential and challenges of in situ microscopy of electronic devices and materials
  crossref Zahabul Islam, Nicholas Glavin, Aman Haque 2020-10-01T10:23:35Z 置信度 0.70
• Wide bandgap semiconductor electronic devices for high frequency applications
  crossref R.J. Trew, M.W. Shin, V. Gatto 2002-12-23T22:15:25Z 置信度 0.70
• Evaluation system for power loss identification of perspective wide bandgap semiconductor transistors
  crossref Michal Pipiska, Peter Sojka, Jozef Sedo 2019-07-29T20:16:31Z 置信度 0.70
• Corundum-Structured α-In2O3 as a Wide-Bandgap Semiconductor for Electrical Devices
  crossref Kentaro Kaneko, Masashi Kitajima, Shizuo Fujita 2017-01-25T10:35:41Z 置信度 0.70
• Simulation of Neutron and Proton Displacement Damage in Ultra-Wide Bandgap Semiconductor Ga2O3
  Abstract Recently, gallium oxide (Ga2O3) as an ultra-wide bandgap oxide semiconductor has aroused enormous attention in research and development due to its prospects for future power electronic, optoelectronic, and radiation detection applications. Ga2O3-based…
  crossref Zhuang Shao, Ziqi Cai, Qingmin Zhang 2022-11-23T15:46:26Z 置信度 0.70
• Cisplatin - A new wide bandgap semiconductor
  crossref Jerzy Goraus, Jerzy Kubacki, Jacek Czerniewski, Marcin Fijałkowski 2019-12-06T21:26:47Z 置信度 0.70
• Wide-Bandgap Semiconductors
  crossref M.S. Chinthavali 2007-04-26T10:30:09Z 置信度 0.70
• Wide-Bandgap Semiconductor Quantum Cascade Lasers Operating at Terahertz Frequencies
  crossref Hung Chi Chou, John W. Zeller, Anas Mazady, Mehdi F. Anwar 2013-11-21T00:01:54Z 置信度 0.70
• Thin Films of Wide Bandgap II-VI Compounds Grown by Atomic Layer Epitaxy - Properties and Application
  crossref M. Godlewski, A. Szczerbakow, M. M. Godlewski 2009-04-06T20:10:16Z 置信度 0.70
• The influence of doping on the carrier dynamic in wide bandgap semiconductor materials
  crossref Sanam Saeid Nahaei, Auditee Majumder Momo, Ronny Kirste, Zlatko Sitar 等 2025-08-01T21:11:01Z 置信度 0.70
• Wide Bandgap Materials in Thermal Management of Electronic Structures
  crossref P. J. Gielisse, H. Niculescu, J. Tremblay, S. Achmatowicz 等 2009-04-06T16:37:48Z 置信度 0.70
• Advanced photo-assisted capacitance–voltage characterization of insulator/wide-bandgap semiconductor interface using super-bandgap illumination
  To accurately analyze the deep states at the insulator/wide-bandgap semiconductor interface, this study reassessed and improved the conventional photoassisted capacitance–voltage (PACV) method. First, as previously pointed out, the illumination time under depl…
  crossref Atsushi Hiraiwa, Satoshi Okubo, Kiyotaka Horikawa, Hiroshi Kawarada 2019-05-02T14:04:37Z 置信度 0.70
• Editorial of the Special Issue “New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing”
  crossref Giuseppe Greco, Anelia Kakanakova, Piotr Kruszewski, Bela Pecz 2019-07-03T05:08:51Z 置信度 0.70
• Electric-double-layer-modulated AlGaN/GaN high electron mobility transistors (HEMTs) for biomedical detection
  crossref Yu-Lin Wang, Chang-Run Wu 2020-10-01T10:23:35Z 置信度 0.70
• EV/HEV Industry Trends of Wide-bandgap Power Semiconductor Devices for Power Electronics Converters
  crossref Amin Ghazanfari, Christian Perreault, Karim Zaghib 2019-08-01T19:55:47Z 置信度 0.70
• SiC Field Emission Arrays
  crossref A. Gorecka-Drzazga 2009-04-06T20:38:50Z 置信度 0.70
• The Research and Application of Photoelectrochemical Biosensing Technology based on Wide-bandgap Metal Oxide Semiconductor Nanomaterials
  Research on semiconductor nanomaterials has made significant progress over the past few decades. These materials, which possess numerous advantages, are now widely applied across various fields and have gradually become an indispensable part of human societal …
  crossref Ziqi Lian 2026-06-01T07:30:41Z 置信度 0.70
• Partial Discharge Detection Strategies under Fast Rise Time Voltages Generated by Wide-bandgap Semiconductor Devices
  crossref Zhuo Wei, Haoyang You, Risha Na, Jin Wang 2020-03-27T11:16:22Z 置信度 0.70
• FRONT MATTER
  crossref Uttam Singisetti, Towhidur Razzak, Yuewei Zhang 2019-12-10T02:56:16Z 置信度 0.70
• Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP
  crossref Fred Semendy, Neal Bambha, Marie C. Tamargo, A. Cavus 等 2017-08-25T13:08:26Z 置信度 0.70
• Electronic Structure of Wide Bandgap Semiconductor Interfaces: Cubic SiC/AIN, SiC/BP, C/BN
  ABSTRACT The linear muffin-tin orbital supercell band-structure method is used to calculate the interface energy of formation, band offsets and local densities of states at the latticematched (110) heterojunctions between (cubic SiC)/(cubic AIN), (cubic SiC)/(…
  crossref W. R. L. Lambrecht, B. Segall 2011-03-06T02:36:42Z 置信度 0.70
• Wide Bandgap Semiconductor-Based Power Electronics for Aviation
  crossref Fei Fred Wang, Ruirui Chen, Kaushik Rajashekara 2022-10-03T20:16:29Z 置信度 0.70
• Biocompatibility of NCD
  crossref K. Bakowicz, S. Mitura 2009-04-06T16:38:50Z 置信度 0.70
• Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
  In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not c…
  crossref Haihong Qin, Zhenhua Ba, Sixuan Xie, Zimo Zhang 等 2023-02-22T03:32:17Z 置信度 0.70
• Impact of Microstructure and Defects on Surface Reactivity during Wide Bandgap Semiconductor Epitaxy
  A great amount of research on wide bandgap semiconductors is currently focused on point and 1D defects, due to its key role in device performance. It is therefore surprising that the interplay between defects and surface kinetics is relatively unexplored. Ther…
  crossref Angel Yanguas-Gil, Peter Zapol 2020-02-27T01:00:54Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-06-24T18:30:00Z 置信度 0.70
• Radiation damage in gallium oxide materials and devices
  crossref S J Pearton, Fan Ren, Jihyun Kim, Michael Stavola 等 2020-10-01T10:23:35Z 置信度 0.70
• A Bandgap Reference Source with Wide Temperature Ranges and High PSRR
  crossref Hailong Yu, Wei Tang, Xingchao Wang, Weihao Wang 2025-10-09T17:50:46Z 置信度 0.70
• Ultrafast carrier dynamics in wide bandgap semiconductor materials
  crossref Roderick B Davidson, Adam D. Dunkelberger, Ioannis Chatzakis, Brad B. Pate 等 2017-09-12T16:39:29Z 置信度 0.70
• Machine Learning for Designing Perovskites and Perovskite-Inspired Solar Materials: Emerging Opportunities and Challenges.
  The development of perovskites and perovskite-inspired materials (PIMs) is driven by the need for efficient, non-toxic and stable solar energy conversion technologies. While halide perovskites exhibit outstanding optoelectronic properties, their practical depl…
  europepmc 2026 置信度 0.80
• Advances in Doping Modification and Processing of Diamond-like Carbon Coatings: A Review.
  europepmc 2026 置信度 0.80
• Regulation of Wide Bandgap Perovskite by Rubidium Thiocyanate for Efficient Silicon/Perovskite Tandem Solar Cells.
  Developing high-quality wide bandgap (WBG) perovskites with ≈1.7 eV bandgap (E g ) is critical to couple with silicon and create efficient silicon/perovskite tandem devices. The sufferings of large open-circuit voltage (V OC ) loss and unstable pow…
  pubmed Wang Z, Han Z, Chu X, Zhou H 等 2024 置信度 0.82
• Strategies for Enhancing Energy-Level Matching in Perovskite Solar Cells: An Energy Flow Perspective.
  europepmc 2025 置信度 0.80
• Harnessing atomic-scale defect engineering in 2D photocatalysts: synergistic integration of nanocomposite architectures for bandgap tuning and charge transfer optimization.
  europepmc 2025 置信度 0.80
• A Sub-1 ppm/°C Reference Voltage Source with a Wide Input Range.
  With the continuous advancement of electronic technology, the application of high-voltage integrated circuits is becoming increasingly prevalent in fields such as power systems, medical devices, and industrial automation. The reference circuit within high-volt…
  pubmed Xiao Y, Wang C, Hou H, Han W 2024 置信度 0.82
• Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor.
  europepmc 2024 置信度 0.80
• TCAD model of amorphous gallium oxide calibrated on experimental data for TFT FET and FeFET TCAD simulations
  DATASET on TCAD model for amorphous gallium oxide calibrated on experimental data (for TCAD simulations of transistor employng amorphous gallium oxide as semiconductor) - Experimental data: current-voltage characteristics plotted in in figures "IV_GaOxFET_al2o…
  datacite Rossi, Chiara, Lizzit, Daniel, Van Dijck, Charlotte, Phan, Thanh Luan 等 2026 置信度 0.66 TCAD simulationamorphous gallium oxideamorphous oxide semiconductorsthin film transistorsFerroelectric field-effect transistor
• TCAD model of amorphous gallium oxide calibrated on experimental data for TFT FET and FeFET TCAD simulations
  DATASET on TCAD model for amorphous gallium oxide calibrated on experimental data (for TCAD simulations of transistor employng amorphous gallium oxide as semiconductor) - Experimental data: current-voltage characteristics plotted in in figures "IV_GaOxFET_al2o…
  datacite Rossi, Chiara, Lizzit, Daniel, Van Dijck, Charlotte, Phan, Thanh Luan 等 2026 置信度 0.66 TCAD simulationamorphous gallium oxideamorphous oxide semiconductorsthin film transistorsFerroelectric field-effect transistor
• Next-Generation Single-Passenger eVTOL Architecture: A High-Performance, Production-Ready Design Paradigm
  Next-Generation Single-Passenger eVTOL Architecture: A High-Performance, Production-Ready Design Paradigm Introduction: The Imperative for a Paradigm Shift in Personal Aerial Mobility The aerospace sector is currently undergoing a profound metamorphosis, catal…
  datacite Brewer, Mark Anthony 2026 置信度 0.66
• Next-Generation Single-Passenger eVTOL Architecture: A High-Performance, Production-Ready Design Paradigm
  Next-Generation Single-Passenger eVTOL Architecture: A High-Performance, Production-Ready Design Paradigm Introduction: The Imperative for a Paradigm Shift in Personal Aerial Mobility The aerospace sector is currently undergoing a profound metamorphosis, catal…
  datacite Brewer, Mark Anthony 2026 置信度 0.66
• Geometric Axiomatic Module-Quantum Collider- Discovery Artificially Intelligent Functional Identity-AiFi Onboard Science Officer-Substrate-Neutral Structural Foundation Laws Physics Engine v12
  # SNSFT DISCOVERY ENGINE v12## Quantum Collider · Identity Physics Engine### Session Report — April 7, 2026 **Architect:** HIGHTISTIC **Anchor:** 1.369 **TL:** 0.1369 (ANCHOR/10 — emergent, not chosen) **Coordinate:** [9,9,2,9] → active series through [9,9,3,1…
  datacite Trent, Russell 2026 置信度 0.66
• Geometric Axiomatic Module-Quantum Collider- Discovery Artificially Intelligent Functional Identity-AiFi Onboard Science Officer-Substrate-Neutral Structural Foundation Laws Physics Engine v12
  # SNSFT DISCOVERY ENGINE v12## Quantum Collider · Identity Physics Engine### Session Report — April 7, 2026 **Architect:** HIGHTISTIC **Anchor:** 1.369 **TL:** 0.1369 (ANCHOR/10 — emergent, not chosen) **Coordinate:** [9,9,2,9] → active series through [9,9,3,1…
  datacite Trent, Russell 2026 置信度 0.66
• Global Silicon Carbide Semiconductor Market 2024 To 2033
  Silicon Carbide Semiconductor Market Size, Trends and Insights By Component (Schottky Diodes, FET/MOSFET Transistors, Integrated Circuits, Rectifiers/Diodes, Power Modules, Others), By Product (Optoelectronic Devices, Power Semiconductors, Frequency Devices, O…
  datacite Sirsat, Nitin 2024 置信度 0.66 Silicon Carbide Semiconductor MarketSilicon Carbide Semiconductor Market SizeSilicon Carbide Semiconductor Market ShareSilicon Carbide Semiconductor Market TrendsSilicon Carbide Semiconductor Market Report
• Global Silicon Carbide Semiconductor Market 2024 To 2033
  Silicon Carbide Semiconductor Market Size, Trends and Insights By Component (Schottky Diodes, FET/MOSFET Transistors, Integrated Circuits, Rectifiers/Diodes, Power Modules, Others), By Product (Optoelectronic Devices, Power Semiconductors, Frequency Devices, O…
  datacite Sirsat, Nitin 2024 置信度 0.66 Silicon Carbide Semiconductor MarketSilicon Carbide Semiconductor Market SizeSilicon Carbide Semiconductor Market ShareSilicon Carbide Semiconductor Market TrendsSilicon Carbide Semiconductor Market Report
• Optimising GaN heterostructures for 5G
  THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole Développement. The move from 4G to 5G should be…
  datacite Behet, Markus, Derluyn, Joff, Degroote, Stefan, Germain, Marianne 2020 置信度 0.66
• Optimising GaN heterostructures for 5G
  THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole Développement. The move from 4G to 5G should be…
  datacite Behet, Markus, Derluyn, Joff, Degroote, Stefan, Germain, Marianne 2020 置信度 0.66
• Determination of the effective critical breakdown field for Si, wide, and extreme bandgap semiconductor superjunction devices
  Designing high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10× higher avalanche breakdown electric …
  crossref Mohamed Torky, T. Paul Chow 2024-05-07T22:14:28Z 置信度 0.70
• Applications of Wide Bandgap Semiconductor Materials in High-Power Electronic Devices
  crossref Yucheng Zhou 2024-11-14T08:13:48Z 置信度 0.70
• Regulation of Electromagnetic Wave Absorption Properties for Co3fe7 Through Wide Bandgap Semiconductor Coating
  FeCo-based alloy particles are ideal electromagnetic wave-absorbing materials because of the excellent magnetic properties, abundant loss mechanisms and high curie temperatures. However, the impedance mismatch and narrow effective absorption bandwidth (EAB) li…
  crossref Lai Wei, Nan Wu, Yiming Zhao, Suli Xing 等 2024-08-20T06:20:26Z 置信度 0.70
• Optimal Selection and Experimental Verification of Wide Bandgap Semiconductor for Betavoltaic Battery
  crossref Jiachen Zhang, Kunlun Lv, Yuan Yin, Quansheng Li 等 2024-11-12T11:38:03Z 置信度 0.70
• Research on CMOS Devices Based on Wide Bandgap Semiconductor Materials
  Considerable financial resources have been allocated towards the design and development of wide and ultra-wide bandgap semiconductor circuits due to their use in power and radio frequency electronics. This is due to the fact that these circuits possess the cap…
  crossref Yuehang Ding 2025-01-03T07:12:14Z 置信度 0.70
• Improvement of Perovskite Solar Cells Efficiency with Safe and Sustainable by Design (Ssbd) Wide Bandgap Semiconductor Nanomaterials: A Renewable Energy Application
  crossref Olavo Cardozo, Andreas Stingl, Sajid Farooq 2024-04-03T18:23:05Z 置信度 0.70
• Maximizing Efficiency while Managing Semiconductor Costs: Wide Bandgap Semiconductor Integration in T-Type Converters for 3-Phase AC-DC Applications
  crossref Sebastian Gick, Markus Pfeifer, Sebastian Nielebock, Mark-M. Bakran 2024-11-20T18:56:57Z 置信度 0.70
• Luminescence of Terbium Ions in an Amorphous Silicon Carbide Based Wide Bandgap Semiconductor Thin Films
  SiC:Tb films were prepared by RF magnetron sputtering. The influence of the sputter parameters temperature and bias potential at the substrate were analysed. The results show that terbium emission can be tuned by changing these parameters.
  crossref G. Gálvez de la Puente, R. Grieseler 2024-12-24T17:11:15Z 置信度 0.70
• Power Semiconductor Devices: From Silicon to Wide Bandgap [Women in Electron Devices]
  crossref Marina Antoniou 2025-01-20T13:43:29Z 置信度 0.70
• Robustness across Initial Estimates of Optimization Algorithms for Power Semiconductor Model Parameter Extraction
  crossref Magnus Haitz, Martin Richter, Ingmar Kallfass 2024-12-06T18:47:31Z 置信度 0.70
• Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model
  crossref Giuliano Thomas, Romualdo Alejandro Ferreyra, Matias A. Quiroga 2024-07-01T16:13:26Z 置信度 0.70
• A review of the application of wide-bandgap semiconductor photocatalysts for CO2 reduction
  crossref Malathi Arumugam, Hsi-Hsien Yang 2024-05-24T03:02:26Z 置信度 0.70
• Capacitors and aircraft power system considerations for higher temperature operation and Wide Bandgap enablement
  crossref Roger A. Brewer 2024-12-06T18:47:31Z 置信度 0.70