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• Diamond Nucleation from Activated Vapor Phase
  crossref B. V. Spitsyn 2009-04-06T20:10:16Z 置信度 0.70
• Compositional Investigation for Bandgap Engineering of Wide Bandgap Triple Cation Perovskite
  crossref 2021-07-09T11:46:06Z 置信度 0.70
• III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
  crossref T. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder 等 2016-11-05T04:35:56Z 置信度 0.70
• (Invited, Digital Presentation) Low-Temperature Direct Bonding of Wide-Bandgap Semiconductor Substrates
  Low-temperature direct bonding technique of semiconductor substrates has been developed to integrate dissimilar materials (e.g. Si, Ge, III-V) regardless of lattice and thermal expansion mismatches. Among the direct bonding techniques, a hydrophilic bonding me…
  crossref Takashi Matsumae, Hitoshi Umezawa, Yuichi Kurashima, Hideki Takagi 2023-09-19T22:54:19Z 置信度 0.70
• Gallium oxide techno-economic analysis for the wide bandgap semiconductor market
  crossref Samantha Reese, Andriy Zakutayev 2020-03-06T03:19:27Z 置信度 0.70
• Three‐Dimensional Position‐Sensitive Wide Bandgap Semiconductor Gamma‐Ray Imaging Detectors
  crossref Zhong He 2011-06-25T10:52:55Z 置信度 0.70
• Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes
  Abstract As a component protecting low-voltage (1–3 V) circuits against disturbance pulses such as electro-static discharge, we propose the application of the forward characteristics of wide bandgap semiconductor Schottky barrier diodes (SBDs). This concept wa…
  crossref Yoshimasa Tsujimoto, Takatoshi Tojo, Naoyuki Tsukamoto 2024-11-14T23:02:54Z 置信度 0.70
• Application opportunities and expectations for wide bandgap power devices in power supply
  crossref Zhengqing Zhao, Chaofeng Cai, Tao Wang 2017-07-25T17:44:19Z 置信度 0.70
• Nanostructuring wide bandgap semiconductors for light manipulation
  crossref Ganapathi Subramania 2024-09-02T17:34:14Z 置信度 0.70
• Ammonolysis of gallium phosphide GaP to the nanocrystalline wide bandgap semiconductor gallium nitride GaN
  Ammonolysis of microcrystalline powders of gallium phosphide GaP afforded nanopowders or nanowires of hexagonal gallium nitride GaN.
  crossref Mariusz Drygas, Maciej Sitarz, Jerzy F. Janik 2015-12-03T06:00:44Z 置信度 0.70
• Wide bandgap materials in modern solar cells technology
  crossref M. Sibinski 2002-11-13T12:56:15Z 置信度 0.70
• Hydrogen Storage in Diamond Films
  crossref M. A. Prelas 2004-09-14T00:25:33Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-03-20T18:03:45Z 置信度 0.70
• Review for "One-Dimensional Wide-Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Nanorods for High-Performance Solar-Blind Ultraviolet Photodetectors"
  crossref 2026-04-23T21:03:07Z 置信度 0.70
• The State of the Art of Wide Bandgap Power Semiconductor Devices [White Hot]
  crossref Robert V. White 2025-07-01T13:41:34Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-05-16T18:05:49Z 置信度 0.70
• Light-induced effects on the growth and doping of wide-bandgap II-VI compounds
  crossref Y Marfaing 2002-08-25T10:02:21Z 置信度 0.70
• Light-emitting metasurfaces based on direct bandgap semiconductors
  crossref 2024-11-12T12:13:53Z 置信度 0.70
• Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao, Jin-Feng Zhang, and Jin-Cheng Zhang
  crossref 2018-01-10T09:15:29Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-04-18T22:59:26Z 置信度 0.70
• 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
  crossref 2025-01-16T18:38:00Z 置信度 0.70
• Review for "One-Dimensional Wide-Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Nanorods for High-Performance Solar-Blind Ultraviolet Photodetectors"
  crossref 2026-04-23T21:03:07Z 置信度 0.70
• Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices
  ABSTRACT ZnSe, ZnTe and ZnSe-ZnTe strained-layer superlattices (SLS's) have been successfully grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). The ideal ALE growth, i.e., one monolayer per cycle of opening and closing the shutters of…
  crossref M. Konagai, Y. Takemura, R. Kimura, N. Teraguchi 等 2011-03-03T16:17:29Z 置信度 0.70
• Overview of Recent Progress of Semiconductor Power Devices based on Wide Bandgap Materials
  crossref Xiaoyang Cheng 2018-11-05T15:15:09Z 置信度 0.70
• Driving and Characterization of wide bandgap semiconductors for voltage source converter applications
  crossref Zheyu Zhang, Fred Wang 2014-12-01T18:09:23Z 置信度 0.70
• Review for "One-Dimensional Wide-Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Nanorods for High-Performance Solar-Blind Ultraviolet Photodetectors"
  crossref 2026-04-23T21:03:07Z 置信度 0.70
• Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects
  crossref D. Planson, P. Brosselard, K. Isoird, M. Lazar 等 2014-12-02T22:35:06Z 置信度 0.70
• New 2D penta-SiPN: A wide and indirect bandgap semiconductor
  Abstract In recent years, two-dimensional (2D) pentagonal ternary monolayers have attracted much attention and emerged as a new class of materials because of their new feature and extensive applicability. Using first-principles density functional theory (DFT) …
  crossref I. A. Qattan, Shambhu Bhandari Sharma, KC Santosh, Sufian Abedrabbo 2024-05-07T12:23:15Z 置信度 0.70
• Research on Switching Characteristics and Pulse Control of Wide Bandgap Semiconductor SiC-Based Memristor
  crossref Haiming Qin, Shilei Sun, Nan He, Yi Liu 等 2024-10-23T17:40:38Z 置信度 0.70
• Magnetoresistance-based Current Sensor for Wide Bandgap Power Converter Integration Applications
  crossref Hossein Niakan, Alireza Omidi, Babak Parkhideh 2024-12-06T18:47:31Z 置信度 0.70
• How to use terahertz emission spectroscopy for wide bandgap semiconductor evaluation
  crossref Masayoshi Tonouchi 2023-10-04T18:52:09Z 置信度 0.70
• Wide Bandgap Materials for Semiconductor Devices
  crossref Kuan-Wei Lee, Chuan-Hsi Liu, Durga Misra 2018-11-22T07:07:29Z 置信度 0.70
• Wide Bandgap Materials in Modern Solar Cells Technology
  crossref M. Sibinski 2009-04-06T20:37:48Z 置信度 0.70
• Layered GeI2: A wide-bandgap semiconductor for thermoelectric applications–A perspective
  Layered GeI 2 is a two-dimensional wide-bandgap van der Waals semiconductor, which is theorized to be a promising material for thermoelectric applications. While the value of the experimentally extrapolated indirect optical bandgap of GeI 2 is found to be cons…
  crossref Archit Dhingra 2022-12-12T04:36:31Z 置信度 0.70
• Wide bandgap semiconductor RF power devices
  crossref C.E. Weitzel 2002-11-27T19:26:26Z 置信度 0.70
• Si3N4 Monolayer with Interlocked Lieb Lattices: Wide-Bandgap Semiconductor with Dirac Features, Auxetic Mechanical Response, and Li Storage Capability
  crossref 2026-06-17T09:40:13Z 置信度 0.70
• Si(CC)4Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device
  crossref 2020-04-07T19:51:57Z 置信度 0.70
• Thermoelectric Power in wide bandgap Semiconductor ZnO Nanowire
  crossref Kasala Suresha 2022-05-15T05:59:10Z 置信度 0.70
• AlGaN/GaN Multiple Heterostructure Materials and Electronic Devices
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• Modeling of AlGaN/GaN pH sensors
  crossref Madeline Esposito, Erin Patrick, Mark E Law 2020-10-01T10:23:35Z 置信度 0.70
• A Critique of Wide Bandgap (WBG) Power Semiconductor Datasheets
  Power switching devices made using wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electrical energy generation, transmission, distribution and conditioning [1]. Alth…
  crossref Krishna Shenai 2020-02-27T00:51:43Z 置信度 0.70
• Potential design strategy of wide-bandgap semiconductor p-type <i>β</i>-Ga₂O₃
  Abstract Wide bandgap semiconductor gallium oxide ( β -Ga 2 O 3 ) has emerged as a prominent material in the field of high-power microelectronics and optoelectronics, due to its excellent and stable performance. However, the lack of high-quality p-type β -Ga 2…
  crossref Xinglin Liu, Jun Huang, Qiangmin Wei, Lei Ye 2024-02-13T17:28:51Z 置信度 0.70
• II-VI Wide-Bandgap Semiconductor Device Technology: Deposition, Doping, and Etchig
  crossref Ghenadii Korotcenkov 2023-04-20T14:12:15Z 置信度 0.70
• Diamond Nuclear Radiation Detectors
  crossref Yuming Zhang, Hui Guo, Jinfeng Zhang, Chiwen Qian 等 2025-09-26T06:36:48Z 置信度 0.70
• Electrical and Thermal Degradation and Reliability of GaN HEMTs
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• MOS Transistors and Field Controlled Wide Bandgap Devices
  crossref Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker 2018-02-16T10:43:00Z 置信度 0.70
• Optical Properties of Wide Bandgap II-VI Superlattices
  crossref Peter J Parbrook, Kevin P O'Donnell 2013-05-30T22:19:01Z 置信度 0.70
• Wide bandgap semiconductor materials for high temperature electronics
  crossref Paul R. Chalker 2002-07-25T20:50:19Z 置信度 0.70
• Future navy application of wide bandgap power semiconductor devices
  crossref T. Ericsen 2002-11-07T19:41:04Z 置信度 0.70
• The future and challenges of wide bandgap ZnO semiconductor materials
  crossref Yue Zhang 2020-09-02T09:00:17Z 置信度 0.70
• Li2ZnGeS4: A Wide-Bandgap Diamond-like Semiconductor with Excellent Balance between Laser-Induced Damage Threshold and Second Harmonic Generation Response
  crossref 2020-09-01T07:26:13Z 置信度 0.70
• Heating issues in wide-bandgap semiconductor devices
  crossref Joseph A. Spencer, Alyssa L. Mock, Yuhao Zhang 2022-07-15T13:11:43Z 置信度 0.70
• 2024 IEEE 11th Workshop on Wide Bandgap Power Devices &amp;amp; Applications (WiPDA)
  crossref 2024-12-06T18:49:15Z 置信度 0.70
• Special issue on wide bandgap semiconductor devices
  crossref J.C. Zolper, B.V. Shanabrook 2005-04-21T20:22:11Z 置信度 0.70
• Applications of SiC devices
  crossref Dirk Kranzer, Andreas Hensel, Jürgen Thoma, Cornelius Armbruster 等 2018-10-26T18:47:27Z 置信度 0.70
• Wide Bandgap Semiconductor Electronics and Devices
  crossref Uttam Singisetti, Towhidur Razzak, Yuewei Zhang 2019-11-29T03:22:42Z 置信度 0.70
• Status and prospects of wide bandgap semiconductor devices
  Wide bandgap semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have attracted significant attention due to their exceptional electronic and thermal properties, making them ideal for high-power and high-frequency applications. Th…
  crossref Meihe Zhang, Yunsong Zhang 2023-11-06T02:21:17Z 置信度 0.70
• Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy
  crossref Mahitosh Biswas, Elaheh Ahmadi 2020-10-01T10:23:35Z 置信度 0.70
• Li2ZnGeS4: A Wide-Bandgap Diamond-like Semiconductor with Excellent Balance between Laser-Induced Damage Threshold and Second Harmonic Generation Response
  crossref 2020-09-01T07:26:13Z 置信度 0.70
• A Critique of Wide Bandgap (WBG) Power Semiconductor Device Datasheets
  Power switching devices fabricated using wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electrical energy generation, transmission, distribution, conditioning, and u…
  crossref Krishna Shenai 2014-09-30T16:21:15Z 置信度 0.70
• Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET
  crossref Haihong Qin, Sixuan Xie, Feifei Bu, Shishan Wang 等 2022-01-03T20:18:56Z 置信度 0.70
• Wide Bandgap Power Electronic Devices for Constraint Management in Distribution Networks
  crossref Xun Jiang, Yufeng Wang, Yue Zhou, Wenlong Ming 等 2024-12-19T19:17:27Z 置信度 0.70
• ADVANCEMENTS AND CHALLENGES IN WIDE BANDGAP SEMICONDUCTOR DEVICES FOR HIGH-EFFICIENCY POWER ELECTRONICS
  WBG (Wide Bandgap) devices are an enabling technology that can operate at high switching speeds, is more efficient, can stand higher temperatures, has a higher level of integration, and is lighter and more compact than silicon-based devices. Silicon was runnin…
  crossref Subhashini Thirumalai, Kavitha Mohandoss 2024-10-24T08:44:54Z 置信度 0.70
• Comparing third-generation wide bandgap semiconductor devices SiC MOSFET and GaN HEMT
  Third-generation wide-bandgap semiconductor materials feature a wide bandgap, excellent breakdown electric field strength, high temperature resistance, and great radiation resistance. They can compensate for the drawbacks of conventional semiconductors and all…
  crossref Keyi Peng 2024-01-29T16:02:06Z 置信度 0.70
• Microwave power amplifiers fabricated from wide bandgap semiconductor transistors
  crossref R.J. Trew 2002-11-27T18:21:56Z 置信度 0.70
• 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
  crossref 2024-12-19T19:18:42Z 置信度 0.70
• (Invited) Thermal Limitations in Wide Bandgap (WBG) Semiconductor Power Switching Devices
  Power switching devices made using wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electrical energy generation, transmission, distribution and conditioning. Although…
  crossref Krishna Shenai 2015-05-16T02:31:21Z 置信度 0.70
• Semiconductor-based galvanic isolation
  crossref Xuan Zhang, He Li, Chengcheng Yao, Jin Wang 2016-01-04T16:35:16Z 置信度 0.70
• D5.0 - Compressed Sensing Spectral Photoluminescence Imaging of Wide Bandgap Semiconductor Materials for Power Electronics Applications
  crossref S. Wood, J. Blakesley, G. Koutsourakis, A. Thompson 2023-06-26T09:31:41Z 置信度 0.70
• (Invited) Thermal Limitations in Wide Bandgap (WBG) Semiconductor Power Switching Devices
  Power switching devices made using wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electrical energy generation, transmission, distribution and conditioning [1]. Alth…
  crossref Krishna Shenai 2020-02-27T01:00:54Z 置信度 0.70
• Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE
  crossref H. Morkoc 2002-12-23T22:15:25Z 置信度 0.70
• Preparation of SiC Nuclear Radiation Detectors
  crossref Yuming Zhang, Hui Guo, Jinfeng Zhang, Chiwen Qian 等 2025-09-26T06:31:57Z 置信度 0.70
• Nano/Micro and Bio-Inspired Materials on Wide-Bandgap-Semiconductor-Based Optoelectronic/Power Devices
  This Special Issue on “Nano/Micro and Bio-Inspired Materials on Wide-Bandgap-Semiconductor-Based Optoelectronic/Power Devices” is a collection of 20 original articles dedicated to theoretical and experimental research works providing new insights and practical…
  crossref Siva Pratap Reddy Mallem 2022-01-05T20:42:16Z 置信度 0.70
• S4-P1: Wide and extreme bandgap semiconductor devices for power electronics applications
  crossref T. Paul Chow 2014-11-25T17:10:09Z 置信度 0.70
• Polariton Devices Based on Wide Bandgap Semiconductor Microcavities
  crossref Ryoko Shimada, Ümit Özgür, Hadis Morkoç 2010-11-15T22:38:00Z 置信度 0.70
• Effect of Switching Frequency on Efficiency in Wide Bandgap Based Drive Systems
  crossref Matthew Cooke, Daniel J. Rogers 2024-12-06T18:47:31Z 置信度 0.70
• Short-Circuit Detection Methods for Wide- Bandgap Semiconductor Devices
  Wide-bandgap (WBG) semiconductors, typified by silicon carbide (SiC) and gallium nitride (GaN), have revolutionized power electronics due to their exceptional switching speed, thermal conductivity, and voltageblocking capabilities. These advantages enable the …
  crossref Yichi Liu 2026-02-28T10:27:05Z 置信度 0.70
• Ultra-Wide Bandgap Semiconductor Transistors for mm-wave Applications
  crossref Chandan Joishi, Nidhin Kurian Kalarickal, Wahidur Rahman, Wu Lu 等 2022-08-19T15:39:21Z 置信度 0.70
• Wide bandgap semiconductors for radiation detection in extreme conditions
  High barrier Schottky diodes offer potential for increased efficiency without current leakage.
  crossref Avery Thompson 2024-08-05T12:08:17Z 置信度 0.70
• Review of Research Status and Development Trends of Ga2O3 Wide Bandgap Semiconductor Power Devices
  As a new generation of wide bandgap semiconductor material, gallium oxide Ga2O3 is exactly within the solar-blind ultraviolet band, which is a natural raw material for the production of solar-blind ultraviolet detectors. Ga2O3 solar-blind ultraviolet devices a…
  crossref Shiqing Guo 2026-04-15T02:31:01Z 置信度 0.70
• Quasi van der Waals Epitaxy of Nitride Semiconductor and Its Applications
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:32:56Z 置信度 0.70
• Wide Bandgap Nanoresonators
  crossref 2022-08-10T14:32:54Z 置信度 0.70
• Wide-bandgap heterojunction field-effect transistors
  crossref F Therez, M Da Silva 2002-08-25T10:02:21Z 置信度 0.70
• Near-Junction Thermal Management for Wide Bandgap Devices
  crossref Avram Bar-Cohen, John D. Albrecht, Joseph J. Maurer 2011-11-02T14:50:43Z 置信度 0.70
• Technology of Wide-Bandgap Diode Structures for Highfrequency Operation
  crossref K. Mutamba, O. Yilmazoglu, O. Cojocari, C. Sydlo 等 2007-01-19T11:21:24Z 置信度 0.70
• Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements
  crossref C. Roecker, R. Schirato 2018-12-07T22:28:24Z 置信度 0.70
• Review of the Characteristics and Application Progress of Gallium Oxide Wide Bandgap Semiconductor Materials
  As a fundamental material for wide bandgap semiconductors, gallium oxide features a thermodynamically stable crystal structure along with excellent chemical and thermal stability. Compared to other materials, it offers significant advantages in performance and…
  crossref Xuerui Zhu 2026-08-14T03:31:53Z 置信度 0.70
• Discussions on the semiconductor-based galvanic isolation
  crossref Xuan Zhang, Lixing Fu, Mingzhi Leng, Jin Wang 2014-12-01T18:09:23Z 置信度 0.70
• Beta gallium oxide nanomechanical transducers: fundamentals, devices, and applications
  crossref Xu-Qian Zheng, Philip X-L Feng 2020-10-01T10:23:35Z 置信度 0.70
• Frequency dispersion of capacitance–voltage characteristics in wide bandgap semiconductor-electrolyte junctions
  Abstract The frequency dispersion of capacitance–voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency ran…
  crossref D S Frolov, V I Zubkov 2016-11-14T04:13:35Z 置信度 0.70
• On the Power-Handling Capability of Wide Bandgap (WBG) Semiconductor Power Switching Devices
  Power switching devices made from wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electricity infrastructure. However, limited availability, high cost, unproven appli…
  crossref Krishna Shenai 2014-09-30T16:21:15Z 置信度 0.70
• Radiation Response Study of SiC Nuclear Radiation Detectors
  crossref Yuming Zhang, Hui Guo, Jinfeng Zhang, Chiwen Qian 等 2025-09-26T06:27:33Z 置信度 0.70
• A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode
  The Super Cascode is a series connected structure with a normally-off low voltage Si-MOSFET and multiple normally-on wide bandgap semiconductors. It has low switching losses compared with silicon based bipolar devices, and low on-resistance and low cost compar…
  crossref Xiang Guo Wang, Masayuki Yamamoto 2019-07-19T07:43:00Z 置信度 0.70
• The mechanism of phonon anharmonicity in wide bandgap semiconductor ZnGa2O4
  crossref Zijun Shi, Yuxin Zhao, Li Fan, Long Cao 等 2025-12-17T09:48:37Z 置信度 0.70
• On the Power-Handling Capability of Wide Bandgap (WBG) Semiconductor Power Switching Devices
  Power switching devices made using wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electrical energy generation, transmission, distribution and conditioning [1]. Alth…
  crossref Krishna Shenai 2020-02-27T00:51:43Z 置信度 0.70
• The Role of Polar Optical Modes in Wide Bandgap Semiconductor Quantum Structures
  : In this paper, the interface polariton (IP), the confined (CF) modes in nanostructures made with wide bandgap semiconductors, as well as their contributions to the carrier scattering mechanism have been investigated. An asymmetric quantum well (AQW) made wit…
  crossref V.N. Stavrou, I.G. Tsoulos, N.E. Mastorakis 2023-12-07T11:06:39Z 置信度 0.70
• <scp>III</scp> – <scp>V</scp> and Wide Bandgap
  crossref Mohammed Alomari 2022-09-30T21:26:41Z 置信度 0.70
• Switching Loss Measurement of Wide-Bandgap Reverse-Blocking Semiconductor Switches in Current-Source Converters
  crossref Benedikt Riegler, Annette Mütze 2023-03-10T18:21:09Z 置信度 0.70
• Performance Degradation of Ga2O3-Based X-Ray Detector Under Gamma-Ray Irradiation
  X-ray response performances of a p-NiO/ &#x3b2; -Ga 2 O 3 hetero-junction diode (HJD) X-ray detector were studied before and after &#x3b3;-ray irradiation at -200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were in…
  pubmed Xiao Ouyang, Silong Zhang, Tao Bai, Zhuo Chen 等 2025 Mar 14 置信度 0.82
• Growth and properties of wide-bandgap semiconductor La-doped SrSnO3 film under strain conditions
  crossref Yuyang Zhang, Zhaoyang Wang, Fei Sun, Bangmin Zhang 等 2024-05-30T05:02:21Z 置信度 0.70