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• Fabrication and Research of Wide-Bandgap Semiconductor AIN-Based Unipolar Memristors
  crossref Haiming Qin, Xinpeng Wang, Dayu Zhou, Liang Zeng 等 2025-06-30T17:36:02Z 置信度 0.70
• Decision letter for "One-Dimensional Wide-Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Nanorods for High-Performance Solar-Blind Ultraviolet Photodetectors"
  crossref 2026-04-23T21:03:07Z 置信度 0.70
• Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope
  crossref Nobuo SATOH, Atsushi DOI, Hidekazu YAMAMOTO 2021-02-24T16:11:26Z 置信度 0.70
• 3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)
  crossref 2011-09-16T19:58:43Z 置信度 0.70
• Ion implantation induced nucleation and epitaxial growth of high-quality AlN
  AlN materials have a wide range of applications in the fields of optoelectronic, power electronic, and radio frequency. However, the significant lattice mismatch and thermal mismatch between heteroepitaxial AlN and its substrate lead to a high threading disloc…
  crossref Sen Yu, Sheng-Rui Xu, Hong-Chang Tao, Hai-Tao Wang 等 2024-09-04T10:25:59Z 置信度 0.70
• The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors: theory, modeling, and experiments
  crossref Indraneel Sanyal, Jen-Inn Chyi 2020-10-01T10:23:35Z 置信度 0.70
• Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells
  crossref Q W Wang, J Li, J Y Lin, H X Jiang 2020-10-01T10:23:35Z 置信度 0.70
• Study on the Impact of Operating Point on Transmission Efficiency and Harmonic Suppression of T/R Module Based on Wide Bandgap Semiconductor
  crossref Li Ji Hao 2010-01-20T11:59:52Z 置信度 0.70
• Application of $TiO_{2}$ Based Wide Bandgap Semiconductor to Intense Proton Beam Monitoring
  crossref Pankaj Chetry, Rupa Jeena, Amandeep Kaur, Pradeep Sarin 等 2023-11-28T14:02:53Z 置信度 0.70
• Overview of Crystals, Bonding, Imperfections, Atomic Models, Narrow and Wide Bandgap Semiconductors and, Semiconductor Devices
  crossref K. M. Gupta, Nishu Gupta 2015-08-19T14:00:43Z 置信度 0.70
• A Tight-Binding Model for Gallium Oxide: The Newest Ultra Wide-Bandgap Semiconductor
  crossref Yifan Frank Zhang, Mengren Bill Liu, Guru Khalsa, Debdeep Jena 等 2022-01-17T21:16:59Z 置信度 0.70
• Nanocrystalline Diamond Thin Films: High Temperature Dielectric Properties and Wide Bandgap Semiconductor Device Passivation Applications
  Abstract not Available.
  crossref Nirmal Govindaraju, Dibakar Das, Peter Kosel, Raj Singh 2020-02-26T23:54:05Z 置信度 0.70
• 3D analysis of thermal and electrical performance of wide bandgap VDMOSFETs
  crossref Mohammad A. Matin, Mahesh Manandhar 2017-08-24T01:25:10Z 置信度 0.70
• Dielectric Properties of NCD Films in Sensor Applications
  crossref T. Guzdek, M. Clapa, J. Szmidt 2008-07-28T14:01:51Z 置信度 0.70
• Correction to “A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces”
  crossref Tianli Feng, Hao Zhou, Zhe Cheng, Leighann Sarah Larkin 等 2024-06-18T12:30:32Z 置信度 0.70
• Challenges and potential payoff for crystalline oxides in wide bandgap semiconductor technology
  crossref W.Alan Doolittle, Gon Namkoong, Alexander G. Carver, April S. Brown 2003-07-07T09:48:54Z 置信度 0.70
• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  Abstract Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining…
  crossref Qiang Zhao, Michael Lukitsch, Jie Xu, Gregory Auner 等 2012-09-03T13:12:36Z 置信度 0.70
• Temperature Dependence of Raman Linewidth on Wide Bandgap Semiconductor GaN by Micro-Raman Imaging and Ab-initio Calculations in High-temperatures
  crossref Jun Suda 2018-10-31T14:08:05Z 置信度 0.70
• Picosecond Raman Studies of Electron-Phonon Interactions in the Wide Bandgap Semiconductor GaN
  ABSTRACT Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy ћω = 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. …
  crossref K.T. Tsen, D.K. Ferry, A. Botchkarev, B. Sverdlov 等 2011-04-06T15:16:59Z 置信度 0.70
• Touch current suppression for semiconductor-based galvanic isolation
  crossref Xuan Zhang, Chengcheng Yao, Pengzhi Yang, Huanyu Chen 等 2017-01-05T12:15:31Z 置信度 0.70
• Decision letter for "One-Dimensional Wide-Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Nanorods for High-Performance Solar-Blind Ultraviolet Photodetectors"
  crossref 2026-04-23T21:03:07Z 置信度 0.70
• Some Technological Aspects of Optical Fibre Cable Production
  crossref M. Ambroziak, K. Zdunek, M. Wronikowski 2009-04-06T20:37:48Z 置信度 0.70
• Synthesis of GaN by Reactive Sputtering at Low Temperature
  crossref A. Jagoda, L. Dobrzanski, B. Stanczyk 2008-07-28T14:01:51Z 置信度 0.70
• Insulation design for Wide Bandgap (WBG) device based voltage source converter fed motors
  crossref Ajay Morya, Hamid A. Toliyat 2017-12-13T14:37:17Z 置信度 0.70
• Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics
  crossref N. Govindaraju, R.N. Singh 2011-06-13T05:12:32Z 置信度 0.70
• Wide Bandgap Semiconductors for LVDC Solid State Circuit Breaker applications
  crossref George Govaerts, Urmimala Chatterjee, Johan Driesen, Wilmar Martinez 2024-01-09T15:12:17Z 置信度 0.70
• ZnGeP₂: A Wide Bandgap Chalcopyrite Structure Semiconductor for Nonlinear Optical Applications
  ABSTRACT In this paper we report the growth and characterization of wide bandgap chalcopyrite structure semiconductor ZnGeP 2 epitaxial layers by open tube MOCVD and ZnGeP 2 single crystals by high-pressure vapor transport (HPVT). The electrical and optical pr…
  crossref G. C. Xing, K. J. Bachmann, J. B. Posthill, M. L. Timmons 2011-03-06T02:36:42Z 置信度 0.70
• OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K
  Abstract Wide bandgap semiconductors have recently become more frequently used in the power electronics domain. They are predicted to replace traditional silicon, especially for high voltage and/or high frequency devices. Device design has made a lot of progre…
  crossref H Hamad, D Planson, C Raynaud, P Bevilacqua 2017-03-02T10:19:54Z 置信度 0.70
• A Voltage-Edge-Rate-Limiting Soft-Switching Inverter for Wide-Bandgap Devices
  crossref Minyu Cai, Oleg Wasynczuk, Maryam Saeedifard 2018-12-13T01:29:19Z 置信度 0.70
• Spectral Splitting Solar Cells Combining Planar Heterojunction Wide-Bandgap and Inverted Narrow-Bandgap Perovskite Architectures
  crossref 2025-04-21T00:40:16Z 置信度 0.70
• Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and Diamonds
  ABSTRACT Combining interdisciplinary fields of nonlinear optics, dynamic holography, and photoelectrical phenomena, we developed the optical measurement technologies for monitoring the spatial and temporal non-equilibrium carrier dynamics in wide bandgap semic…
  crossref Kęstutis Jarašiūnas, Ramūnas Aleksiejūnas, Tadas Malinauskas, Saulius Nargelas 等 2012-03-16T06:49:58Z 置信度 0.70
• Ultra-Wideband Surface Current Sensor Topology for Wide-Bandgap Power Electronics Applications
  crossref Ali Parsa Sirat, Hossein Niakan, Babak Parkhideh 2024-01-09T20:12:17Z 置信度 0.70
• Flexibility of Quasi van der Waals Epitaxial Nitrides
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T06:04:17Z 置信度 0.70
• Two-Dimensional III-Nitride Materials Growth and Applications
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:32:56Z 置信度 0.70
• Physical-Chemical Etching of GaN Layers on Sapphire
  crossref A. Szczesny, J. Szmidt, R. B. Beck 2008-07-28T14:01:51Z 置信度 0.70
• Growth and Deep UV Luminescent Properties of Rocksalt-Structured Ultra-Wide Bandgap MgZnO on MgO Substrates
  crossref Kentaro Kaneko, Kyohei Ishii, Mizuki Ono, Kanta Kudo 等 2019-08-30T00:42:04Z 置信度 0.70
• <i>(Invited) </i>Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency
  crossref Eric P Carlson, Daniel W Cunningham, Isik C. Kizilyalli 2018-09-21T14:02:28Z 置信度 0.70
• Wide-Bandgap Semiconductor Transit Time Sources for Terahertz IMPATTs
  crossref Sangeeta Jana Mukhopadhyay, Aritra Acharyya 2026-05-06T22:34:34Z 置信度 0.70
• Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
  The research and commercialization of SiC based power device have been burgeoning over the last decade worldwide, which is bringing about an increasing demand on lost-cost and low-defect SiC wafers. To meet this challenge, we have been continuously making effo…
  crossref Chun Jun Liu, T.H. Peng, B. Wang, Y. Guo 等 2019-05-17T11:01:21Z 置信度 0.70
• Probing carrier dynamics in wide-bandgap semiconductor-metal nanoparticle hybrids (Conference Presentation)
  crossref Daniel Ratchford, Adam D. Dunkelberger, Jeffrey C. Owrutsky, Pehr E. Pehrsson 2016-11-09T20:37:39Z 置信度 0.70
• Advanced materials and structures for high power wide bandgap devices
  crossref D. Shaddock, L. Meyer, J. Tucker, S. Dasgupta 等 2003-12-22T17:34:10Z 置信度 0.70
• A Segmented Compensation Wide Operating Range Bandgap Reference Voltage Source
  crossref Hao He, Quanyuan Feng, Zujing Zhang 2024-08-09T17:18:24Z 置信度 0.70
• Simplified Calculation of Parasitic Elements and Mutual Couplings of Wide-bandgap Power Semiconductor Modules
  crossref Mohammad Ali, Jens Friebe, Axel Mertens 2020-10-07T19:59:46Z 置信度 0.70
• (Invited) Advances in Wide Bandgap Thermal Resonant Infrared Detectors
  Exploring the surface of distant planets, notably Venus, requires robust technologies capable of withstanding extreme environmental conditions while providing valuable scientific insights. This paper delves into the advancements made in designing an instrument…
  crossref Mina Rais-Zadeh 2024-08-19T15:30:26Z 置信度 0.70
• Surface Defects in Wide-Bandgap LiF, SiO2, and ZnO Crystals
  crossref Utkirjon Sharopov 2024-05-27T20:30:15Z 置信度 0.70
• Ferromagnetism of wide-bandgap semiconductor surfaces: Mg-doped AlN
  crossref Sandhya Chintalapati, Yongqing Cai, Ming Yang, Lei Shen 等 2015-10-14T10:13:24Z 置信度 0.70
• 3D Simulation Platform for Semiconductor Crystal Growth Based on Taiwanese Companies Requirements
  crossref Amir R. A. Dezfoli 2023-09-27T17:32:48Z 置信度 0.70
• Czochralski Growth of Indium Iodide and other Wide Bandgap Semiconductor Compounds
  ABSTRACT The Czochralski pulling process is the most valuable and cost efficient method for producing large oriented single crystals of the group IV and III-V semiconductors. However, there have been only a small number of reported attempts to use the Czochral…
  crossref I. Nicoara, D. Nicoara, C. Bertorello, G.A. Slack 等 2011-09-20T13:31:26Z 置信度 0.70
• Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors
  crossref Dominique Planson, Besar Asllani, Luong-Viet Phung, Pascal Bevilacqua 等 2019-02-10T08:17:31Z 置信度 0.70
• The Study of Thermal Oxidation on SiC Surface
  crossref M. T. H. Aung, J. Szmidt, M. Bakowski 2009-04-06T20:38:50Z 置信度 0.70
• Effective Work Function of Cathodes Consisting of Cubic Boron Nitride and Aluminum Nitride
  crossref A. V. Bulyga 2004-09-13T20:25:33Z 置信度 0.70
• From Wide‐Bandgap to Narrow‐Bandgap Perovskite: Applications from Single‐Junction to Tandem Optoelectronics
  Abstract As perovskite solar device is burgeoning photoelectronic device, numerous studies to optimize perovskite solar device have been demonstrated. Amongst various advantages from perovskite light absorbing layer, attractive property of tunable bandgap allo…
  crossref Jihyun Kim, Hyeonseok Lee, Younghyun Lee, Jinhyun Kim 2024-08-10T04:34:17Z 置信度 0.70
• Study on Minimizing Noise in Several CMOS Bandgap Voltage References
  crossref Iulian-Teodor Goia, Iulian Câmpanu, Marius Neag, Raul Oneţ 2024-10-31T17:33:03Z 置信度 0.70
• Energy and wide bandgap
  crossref 2014-08-18T20:58:49Z 置信度 0.70
• Al2O3 Layers for Microelectronics Applications
  crossref E. Dusinski, J. Szmidt, K. Zdunek, M. Elert 等 2009-04-06T20:10:16Z 置信度 0.70
• Wide‐Bandgap Semiconductor Device Technologies for High‐Temperature and Harsh Environment Applications
  crossref Md. Rafiqul Islam, Roisul H. Galib, Montajar Sarkar, Shaestagir Chowdhury 2019-03-29T21:44:20Z 置信度 0.70
• The Influence of Ar-N2 Plasma Conditions on GaN Deposition by rf Sputtering
  crossref B. Stanczyk, A. Jagoda 2008-07-28T14:01:51Z 置信度 0.70
• Preface to selected papers from EMRS 2011 Symposium Q: Engineering of wide bandgap semiconductor materials for energy saving
  crossref Peter Wellmann, Mikael Syväjärvi, Michael Kneissel, Rongmin Wang 2012-04-05T21:36:13Z 置信度 0.70
• High-efficiency power electronic devices based on wide-bandgap semiconductor materials
  crossref Jinqiang Zhang, Qing Gao, Weidong Wang, Haochen Zhang 等 2026-04-15T12:44:30Z 置信度 0.70
• Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
  Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus cen…
  crossref Zeyu Chi, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze 等 2022-02-03T05:42:33Z 置信度 0.70
• Impurity Removal from 6H-SiC Using Field Enhanced Diffusion by Optical Activation Method
  crossref A. B. Spitsyn 2004-09-14T00:25:33Z 置信度 0.70
• Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives
  Due to the absence of high-performance ambipolar wide-bandgap (WBG) semiconductors, the realization of active transparent photoelectronic devices is precluded. Herein, based on the hybrid functional calculations, we predict that, in a wide-bandgap semiconducto…
  crossref Yu Chen, S. W. Fan, P. Xu 2022-12-21T10:46:03Z 置信度 0.70
• Machine-Learning-Enabled p-Gate GaN HEMT Surrogate Model for Semiconductor Database
  crossref Olga Torgashova, Qimao Yang, Jing Guo, Hiu Yung Wong 2025-12-29T18:36:20Z 置信度 0.70
• Terahertz metamaterial modulators based on wide-bandgap semiconductor lateral Schottky diodes
  With the advent of 6G communications and the constant quest for more bandwidth in wireless technologies, the use of frequency bands lying in the terahertz spectrum becomes inevitable. Efficient high-speed modulation and demodulation techniques are necessary fo…
  crossref Wei Jia, Berardi Sensale-Rodriguez 2022-02-02T08:00:07Z 置信度 0.70
• Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide
  crossref M. S. Janson, M. K. Linnarsson, A. Hall�n, B. G. Svensson 等 2004-05-27T13:05:17Z 置信度 0.70
• Present Status and Future Prospects for Electronics in Electric Vehicles/Hybrid Electric Vehicles and Expectations for Wide‐Bandgap Semiconductor Devices
  crossref Kimimori Hamada 2011-06-24T13:11:22Z 置信度 0.70
• Thermal modeling of wide bandgap semiconductor devices for high frequency power converters
  crossref S Sharath Sundar Ram, A Vijayakumari 2018-03-03T00:14:33Z 置信度 0.70
• Temperature Dependence of Optical Parameters of Gallium Sulphide
  crossref M. Kepinska, M. Nowak, M. Szalajko, R. Murri 2009-04-06T16:37:48Z 置信度 0.70
• Application of Atom Probe Tomography for Advancing GaN Based Technology
  crossref Olivia G. Licata, Baishakhi Mazumder 2019-12-10T02:56:16Z 置信度 0.70
• ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures
  Abstract The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. Th…
  crossref Przemysław Struk, Tadeusz Pustelny, Krystyna Gołaszewska, Michał A. Borysiewicz 等 2014-08-20T17:22:29Z 置信度 0.70
• Large Mismatch Substrate Nitrides Quasi van der Waals Epitaxy
  crossref Tongbo Wei, Zhiqiang Liu, Jinmin Li 2025-11-17T04:32:57Z 置信度 0.70
• Electrical Characterization of Direct Bandgap Semiconductor for Radiation Detectors
  crossref Satyarth Tiwari, Sanjay Kumar Sharma 2024-06-28T17:54:40Z 置信度 0.70
• Charge Carriers Removal from 4H-SiC Using Field Enhanced by Optical Activation Diffusion Method
  crossref A. B. Spitsyn 2004-09-14T00:25:33Z 置信度 0.70
• Development of maskless technologies of wide bandgap semiconductor devices by laser microprocessing
  crossref Irmantas Kašalynas, Justinas Jorudas, Simonas Indrišiūnas, Laimis Zubauskas 等 2026-03-05T23:08:09Z 置信度 0.70
• Interaction of Body Fluids with Carbon Surfaces
  crossref B. Walkowiak, V. Kochmanska, W. Jakubowski, W. Okroj 等 2009-04-06T20:38:50Z 置信度 0.70
• Novel Approaches to Wide Bandgap CuInSe2 Based Absorbers
  crossref William N Shafarman 2011-05-25T02:53:32Z 置信度 0.70
• SEPIC converter with wide bandgap semiconductor for PV battery charger
  crossref Manisha Maharjan, Prajina Tandukar, Abhilasha Bajracharya, Fernando B. dos Reis 等 2018-01-17T18:12:15Z 置信度 0.70
• Wide bandgap devices [Session V.A]
  crossref 2010-08-24T11:37:54Z 置信度 0.70
• Wide bandgap/high speed devices
  crossref 2012-08-06T16:53:16Z 置信度 0.70
• Crystal growth and processing of wide bandgap semiconductors
  crossref Roy Szweda 2007-08-01T11:35:53Z 置信度 0.70
• Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1−x(AlN)x doped with terbium and its optical emission properties
  crossref R. Weingärtner, J.A. Guerra Torres, O. Erlenbach, G. Gálvez de la Puente 等 2010-04-01T04:39:43Z 置信度 0.70
• Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices
  crossref P J Parbrook, B Henderson, K P O'Donnell, P J Wright 等 2002-08-25T10:02:21Z 置信度 0.70
• Multi-parameter Degradation Modeling Method for Power MOSFETs Integrating Semiconductor Physics Degradation Data
  crossref Chenyi Wang, Cen Chen, Weixuan Kong, Haodong Wang 等 2025-10-07T17:34:49Z 置信度 0.70
• Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics
  crossref Zane Jamal-Eddine, Yuewei Zhang, Siddharth Rajan 2019-12-10T02:56:16Z 置信度 0.70
• WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS
  In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage …
  crossref M. Sugimoto, H. Ueda, T. Uesugi, T. kachi 2007-07-06T08:46:03Z 置信度 0.70
• The Influence of RF Plasma Processes on Nitride (BN, AlN, GaN) Layers
  crossref M. Galazka, J. Szmidt, A. Werbowy 2008-07-28T14:01:51Z 置信度 0.70
• Growth study of wide bandgap a-Si:H and a-SiN:H by PECVD method for application in thin film transistor
  crossref Jasruddin, W.W. Wenas, T. Winata, M. Barmawi 2002-11-11T10:57:40Z 置信度 0.70
• Chemical Vapor Deposition of Wide-Bandgap p-Type Semiconductor Cuprous Iodide for Optoelectronic Device Applications
  Continuous, pinhole-free thin films of transparent conductive materials (TCMs) with p- and n-type conductivity are critical components of optoelectronic devices including photovoltaics (PV), transparent electronics, and LEDs [1]. TCMs with n-type conductivity …
  crossref Eliza Kate Spear, Christina Marie Chang, Luke M. Davis, Roy G. Gordon 2022-07-14T16:56:33Z 置信度 0.70
• Wide-bandgap Semiconductor Devices using Group-III Nitride/SiC Heterointerface
  crossref Jun SUDA, Hiroki MIYAKE, Tsunenobu KIMOTO 2010-12-20T07:33:05Z 置信度 0.70
• Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials
  crossref I. A. Salama, N. R. Quick, A. Kar 2005-08-30T10:40:01Z 置信度 0.70
• Plasma processes for formation of electronic structures with wide bandgap material layers
  crossref A. Jakubowski, R.B. Beck, J. Szmidt, A. Werbowy 2002-11-13T13:02:58Z 置信度 0.70
• Change My Research Field to Wide-bandgap Semiconductor from Scanning Probe Microscopy
  crossref Daiki KATSUBE 2025-10-09T22:10:34Z 置信度 0.70
• II-VI Wide-Bandgap Semiconductor Device Technology: Schottky Barrier, Ohmic Contacts, and Heterostructures
  crossref Ghenadii Korotcenkov, Nikolay P. Simonenko, Fedor S. Fedorov, Victor V. Sysoev 2023-04-20T14:12:15Z 置信度 0.70
• Materials for DNA Sequencing Chip
  crossref A. Karczemska, A. Sokolowska 2009-04-06T20:38:50Z 置信度 0.70
• Evaluation of a Low-Cost Wide Bandwidth Current Shunt for Characterization of Wide Bandgap Semiconductor Devices
  crossref Philipp Ziegler, Jörg Haarer, Philipp Marx, Mattea Eckstein 等 2023-10-02T13:44:10Z 置信度 0.70
• Review for "Unveiling the impact of photoinduced halide segregation on performance degradation in wide-bandgap perovskite solar cells"
  crossref 2025-01-23T16:14:19Z 置信度 0.70
• Analysis and Comparison of LLC Resonance Circuits for Wide Band Gap Semiconductor Component
  crossref Yu-Kai Chen, Tzu-Hsiang Chang, Chien-Cheng Luo, Chung-En Hsiao 等 2023-09-27T17:32:48Z 置信度 0.70
• Wide Bandgap Semiconductor Nanowires for Sensing Applications
  Abstract not Available.
  crossref Steve Pearton, David Norton, Fan Ren, Li-Chia Tien 等 2020-02-26T23:18:40Z 置信度 0.70
• Review for "Unveiling the impact of photoinduced halide segregation on performance degradation in wide-bandgap perovskite solar cells"
  crossref 2025-01-23T16:14:19Z 置信度 0.70
• Modeling and model parameter extraction of wide bandgap power semiconductor device, package, and circuit for simulating fast switching behavior
  crossref Tsuyoshi Funaki 2018-11-16T03:08:50Z 置信度 0.70