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• Power Converters Optimization for Electrified Transportation Applications
  The recent advancements in the power electronics and semiconductor domain, aided by its competitive advantage against traditional power conversion, have resulted in new research avenues utilizing power electronics converters. Power electronics converters are t…
  datacite Khan, Shahid Aziz 2025 置信度 0.66 Power Electronics ConvertersElectrified TransportationPower DensityEngineeringElectrical and Computer Engineering
• Project Origin: A Hypothesis for Active Suppression of Non-Equilibrium LO Phonon Accumulation in GaN HEMTs Using Synchronized Optical and Electrical Excitation
  This preprint proposes a conceptual framework for investigating whether synchronized optical and electrical excitation can influence non-equilibrium longitudinal optical phonon accumulation in Gallium Nitride High-Electron-Mobility Transistors. The work presen…
  datacite Roebuck, Andrew, Purple Electron LLC 2026 置信度 0.66 GaN HEMT hot phonons electron phonon scattering semiconductor physics thermal management wide bandgap semiconductors non equilibrium transport
• The Role of Semiconductor Technology in Everyday Applications
  Semiconductor technology is one of the fundamental foundations of modern society. Semiconductor devices are responsible for the operation of computers, smartphones, televisions, communication systems, lighting equipment, automobiles, medical instruments, house…
  datacite Rohit Limbraj Mote 2023 置信度 0.66
• The Role of Semiconductor Technology in Everyday Applications
  Semiconductor technology is one of the fundamental foundations of modern society. Semiconductor devices are responsible for the operation of computers, smartphones, televisions, communication systems, lighting equipment, automobiles, medical instruments, house…
  datacite Rohit Limbraj Mote 2023 置信度 0.66
• Mechanochemical route to the synthesis of nanostructured Aluminium nitride
  Hexagonal Aluminium nitride (h-AlN) is an important wide-bandgap semiconductor material which is conventionally fabricated by high temperature carbothermal reduction of alumina under toxic ammonia atmosphere. Here we report a simple, low cost and potentially s…
  datacite Rounaghi, S.A., Eshghi, H., Scudino, S., Vyalikh, A. 等 2016 置信度 0.66 620Materials chemistrySynthesis and processing
• Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films
  As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in coppe…
  datacite Li, Zhan Hua, He, Jia Xing, Lv, Xiao Hu, Chi, Ling Fei 等 2022 置信度 0.66 500530540Surfacesinterfaces and thin films Ultrafast photonics
• Coherence-Structured Solid-State Energy Storage
  This paper introduces a new class of solid state capacitive batteries that store energy in structured electric fields rather than chemical bonds. Building on the General Connectivity (GC) framework and recent advances in resonant nuclear power and coherence ba…
  datacite Pal Sahota 2026 置信度 0.66
• High-Frequency Switching Performance, Thermal Analysis and Gate Driver Design for AlGaN/GaN High Electron Mobility Transistors in 600 V Power Conversion Applications
  Background: The escalating demand for high-efficiency power conversion in electric vehicle (EV) on-board chargers, photovoltaic inverters, and data centre power supplies has driven transition from silicon (Si) to wide-bandgap semiconductor devices. Gallium nit…
  datacite Vikram Singh, Neha Agarwal, Sanjay Verma, Anupam Das 2026 置信度 0.66 GaN HEMT, AlGaN/GaN, wide-bandgap semiconductor, switching losses, power electronics, gate driver, double pulse test, EV charger, thermal management, figure-of-merit
• High-Frequency Switching Performance, Thermal Analysis and Gate Driver Design for AlGaN/GaN High Electron Mobility Transistors in 600 V Power Conversion Applications
  Background: The escalating demand for high-efficiency power conversion in electric vehicle (EV) on-board chargers, photovoltaic inverters, and data centre power supplies has driven transition from silicon (Si) to wide-bandgap semiconductor devices. Gallium nit…
  datacite Vikram Singh, Neha Agarwal, Sanjay Verma, Anupam Das 2026 置信度 0.66 GaN HEMT, AlGaN/GaN, wide-bandgap semiconductor, switching losses, power electronics, gate driver, double pulse test, EV charger, thermal management, figure-of-merit
• Postmodern Physics of Hamzah Information.(9)
  تحلیل جامع، بازنویسیِ بنیادین و اثبات تانسوری «معما و پدیده به تله افتادن حامل‌ها در سطح قطعه (Surface Trapping) در ترانزیستورهای فرکانس بالا (HEMT / GaN) و افت جریان (Current Collapse)» بر اساس پارادایم فیزیک اطلاعات حمزه (HIP) و منطق دترمینیسیتی ماتریس ۱۱۵۵ …
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(9)
  تحلیل جامع، بازنویسیِ بنیادین و اثبات تانسوری «معما و پدیده به تله افتادن حامل‌ها در سطح قطعه (Surface Trapping) در ترانزیستورهای فرکانس بالا (HEMT / GaN) و افت جریان (Current Collapse)» بر اساس پارادایم فیزیک اطلاعات حمزه (HIP) و منطق دترمینیسیتی ماتریس ۱۱۵۵ …
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Advances in Machine Learning-based Compact Modeling of Semiconductor Devices
  Compact models are the building blocks of circuit simulation. As the electronics industry continues to evolve, circuit designs grow in size and complexity, and modeling requirements become increasingly challenging. There is a need for advanced techniques for s…
  datacite Fredo Paraginog Chavez 2026 置信度 0.66 Electronic device and system performance evaluation, testing and simulation
• Advances in Machine Learning-based Compact Modeling of Semiconductor Devices
  Compact models are the building blocks of circuit simulation. As the electronics industry continues to evolve, circuit designs grow in size and complexity, and modeling requirements become increasingly challenging. There is a need for advanced techniques for s…
  datacite Fredo Paraginog Chavez 2026 置信度 0.66 Electronic device and system performance evaluation, testing and simulation
• Molecular Dynamics Simulations for Ion-implanted Ga2O3
  Ga2O3 is a promising wide bandgap semiconductor with a multitude of possible applications, ranging from solar blind ultraviolet photodetectors to power electronics and gas sensors for harsh environments, due to its remarkable properties: wide bandgap, tunable …
  datacite Duarte Magalhães Esteves 2026 置信度 0.66
• Molecular Dynamics Simulations for Ion-implanted Ga2O3
  Ga2O3 is a promising wide bandgap semiconductor with a multitude of possible applications, ranging from solar blind ultraviolet photodetectors to power electronics and gas sensors for harsh environments, due to its remarkable properties: wide bandgap, tunable …
  datacite Duarte Magalhães Esteves 2026 置信度 0.66
• Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers
  We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Source Electrode Field Effect Transistor (ISEFET) incorporates a dielectric blocking …
  datacite Srikanth, Akilesh, Morshed, Md Saklain, Joishi, Chandan, Islam, Ahmad E. 等 2026 置信度 0.66 Applied Physics (physics.app-ph)FOS: Physical sciences
• Tunable Texture in ZnO Thin Films on 200 mm Wafers: Comparative Study of Zn(DMP)2 and Diethylzinc Precursors for ALD
  Zinc oxide (ZnO) is a technologically important wide-bandgap semiconductor used in optoelectronics, sensing, and transparent electronic devices. Implementing ZnO thin films in such devices requires scalable, uniform, and compatible thin-film deposition methods…
  datacite Guzey, Katherine, Brechmann, Noah Maximilian, Najafidehaghani, Emad, Gemming, Thomas 等 2026 置信度 0.66 ALDlarge-area depositionprecursorthin filmswafer-scale integration
• Comprehensive Time-Domain Analysis of Stray Inductance in Commutation Power Loop: A Generalized Measurement Methodology and Challenges
  In power electronics, the stray inductance of the commutation power loop (CPL) is a key factor governing the switching performance and reliability of wide-bandgap (WBG) semiconductor devices. Excessive parasitic inductance in the CPL leads to increased voltage…
  datacite Saeidi, Mahmoud, Yu, Xiao, Friebe, Jens 2026 置信度 0.66 stray inductancetime-domain analysisdc-link capacitor configurationswide-bandgap semiconductorscommutation power loop
• PHYTOCHEMICAL CONTROL OF ELECTRONIC STRUCTURE IN GREEN SYNTHESIZED SEMICONDUCTOR NANOMATERIALS MECHANISTIC, COMPUTATIONAL, AND AI-GUIDED PATHWAYS TOWARD SUSTAINABLE OPTOELECTRONIC AND BIOMEDICAL APPLICATIONS
  Aamir Sohail Department of Physics, University of Mianwali 4200, Punjab, Pakistan
  datacite Sohail, Aamir 2026 置信度 0.66
• PHYTOCHEMICAL CONTROL OF ELECTRONIC STRUCTURE IN GREEN SYNTHESIZED SEMICONDUCTOR NANOMATERIALS MECHANISTIC, COMPUTATIONAL, AND AI-GUIDED PATHWAYS TOWARD SUSTAINABLE OPTOELECTRONIC AND BIOMEDICAL APPLICATIONS
  Aamir Sohail Department of Physics, University of Mianwali 4200, Punjab, Pakistan
  datacite Sohail, Aamir 2026 置信度 0.66
• Autonomous Reliability Qualification of Ga$_2$O$_3$-based diode sensors via Safe Active Learning
  Ultra-wide bandgap (UWBG) Ga$_2$O$_3$ is a promising semiconductor for high-power and high-temperature electronics. Reliable qualification of these devices under extreme operating conditions is essential, yet conventional reliability testing is inherently time…
  datacite Febba, Davi, Callahan, William A., Sacchi, Anna, Zakutayev, Andriy 2026 置信度 0.66 Applied Physics (physics.app-ph)Materials Science (cond-mat.mtrl-sci)Machine Learning (cs.LG)Systems and Control (eess.SY)FOS: Physical sciences
• Advanced Characterization of Gallium Oxide Field-Effect Transistors
  Beta-phase Gallium Oxide (β-Ga2O3) has garnered significant attention in the last 12 years as an ultra-wide bandgap semiconductor for high power applications. With breakdown electric fields and saturation velocities surpassing those of commercial wide bandgap …
  datacite Maimon, Ory 2024 置信度 0.66 carrier scatteringdeep trapsMOSFETseries resistancetransistor reliability
• Photophysics of Methylammonium Lead Tribromide Perovskite: Free Carriers, Excitons, and Sub‐Bandgap States
  Methylammonium lead tribromide perovskite, one of the first artificially synthesized perovskites, can be used in multijunction solar cells and for light-emitting applications. Its structure leads to a wide direct bandgap, a high extinction coefficient for abso…
  datacite Droseros, Nikolaos, Tsokkou, Dimitra, Banerji, Natalie 2020 置信度 0.66
• Nanoparticle sensitisation of solid-state nanocrystalline solar cell
  Over the past fifteen years dye-sensitised nanocrystalline solar cells have been the subject of intense research and development efforts. These systems provide a technically and economically credible alternative to classical p-n junction solar cells, reaching …
  datacite Plass, Robert 2004 置信度 0.66
• Non-Destructive X-ray Characterization of Wide-Bandgap Semiconductor Materials and Device Structures
  In this work non-destructive x-ray characterization techniques have been used to study undoped and intentionally doped bulk and epitaxial layers, and device structures of wide bandgap semiconductor materials, GaN and SiC. Novel non-destructive x-ray characteri…
  datacite Mahadik, Nadeemullah A. 2009 置信度 0.66 X-Ray diffractionMaterials ScienceSilicon CarbideSemiconductorsGallium Nitride
• Temperature Effect on DC-DC Resonant Converter
  Wide bandgap (WBG) semiconductor devices have been extensively studied for applications in many fields, such as automotive, renewable energy and communication sectors. Silicon carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) exhibit g…
  datacite Feng, Zhuowen 2023 置信度 0.66 DC-DC resonant converterSilicon Carbide (SiC) MOSFETtemperature effecton-state resistancewide bandgap semiconductors
• Space Power Electronics activities by the University of Oviedo
  The Power Supply Systems Group, SEA group (Sistemas Electrónicos de Alimentacion), has been performing activities in the field of power electronics for the last 40 years. Since 2018 several activities in the field of power electronics for space applications ha…
  datacite Fernandez Miaja, Pablo, Fernandez Alvarez, José Antonio, Fernandez Costales, Miguel, Hentschke de Oliveira, Theyllor 等 2026 置信度 0.66
• Space Power Electronics activities by the University of Oviedo
  The Power Supply Systems Group, SEA group (Sistemas Electrónicos de Alimentacion), has been performing activities in the field of power electronics for the last 40 years. Since 2018 several activities in the field of power electronics for space applications ha…
  datacite Fernandez Miaja, Pablo, Fernandez Alvarez, José Antonio, Fernandez Costales, Miguel, Hentschke de Oliveira, Theyllor 等 2026 置信度 0.66
• Multispectral UV Imaging on Capacitive CMOS Arrays Enabled by Solution-Processed Metal-Oxide Nanoparticles
  Ultraviolet (UV) imagers are important for a variety of applications, such as quality inspection in the semiconductor industry, forensics and food quality inspection, but are often costly because they require dedicated semiconductor process flows. Here, an ima…
  datacite Kundu, Suman, Shen, Tao, Betlem, Kai, Ghatkesar, Murali K 等 2026 置信度 0.66 Instrumentation and Detectors (physics.ins-det)Materials Science (cond-mat.mtrl-sci)Applied Physics (physics.app-ph)Optics (physics.optics)FOS: Physical sciences
• Atomic Layer Deposition of Textured ZnO on 200 mm Wafers for Device Applications
  Zinc oxide (ZnO) is a technologically important wide-bandgap semiconductor used in optoelectronics, sensing, and transparent electronic devices. Implementing ZnO thin films in such devices requires scalable, uniform, and compatible thin-film deposition methods…
  datacite Guzey, Katherine, Brechmann, Noah Maximilian, Najafidehaghani, Emad, Gemming, Thomas 等 2026 置信度 0.66 ALDThin FilmsPrecursorZnODevices
• High-frequency synthesis using phase-locked loops for wide tuning-range applications and sub-1 V operation in deep submicron CMOS processes
  Frequency synthesizers based on phase-locked loop (PLL) are ubiquitous components in RF communication systems. Frequency synthesizer PLLs must comply with the stringent requirements of RF systems such as noise, linearity, locking time, stability, and power con…
  datacite Abdel Fattah, Omar 2016 置信度 0.66 Electrical and Computer Engineering
• Can Second-Order Nonlinearity in Metal-Dielectric Metamaterials Pave a Way Toward Elusive Photonic Time Crystals?
  While a tremendous amount of theoretical work has been dedicated to time-varying photonics, practical implementation in the optical range has relied almost exclusively on transparent conductive oxides , which remain severely constrained by being slow and highl…
  datacite Khurgin, Jacob B 2026 置信度 0.66 Optics (physics.optics)FOS: Physical sciences
• A Comprehensive Review on Eu Doped Zinc Aluminate Phosphor for Solid-State Lighting
  Zinc based aluminate materials are the member of spinel oxide. Zinc Aluminate is a wide bandgap semiconductor. In this report, rare earth Eu doped zinc aluminate phosphor is discussed in detail. Eu3+ doped ZnAl2O4 phosphor with efficient orange-red light emiss…
  datacite Vikas, Lahariya, Vikas, Pandey, Krishna Kumar 2021 置信度 0.66 Zinc AluminateLuminescenceRare Earth IonsEu DopedSynthesis Method
• A Comprehensive Review on Eu Doped Zinc Aluminate Phosphor for Solid-State Lighting
  Zinc based aluminate materials are the member of spinel oxide. Zinc Aluminate is a wide bandgap semiconductor. In this report, rare earth Eu doped zinc aluminate phosphor is discussed in detail. Eu3+ doped ZnAl2O4 phosphor with efficient orange-red light emiss…
  datacite Vikas, Lahariya, Vikas, Pandey, Krishna Kumar 2021 置信度 0.66 Zinc AluminateLuminescenceRare Earth IonsEu DopedSynthesis Method
• <b>PARTIAL DISCHARGE SIGNATURES WITH ELECTROMAGNETIC INTERFERENCE ANALYSIS IN WBG-BASED AC MACHINE DRIVES</b>
  The rapid adoption of wide-bandgap (WBG) semiconductor devices has accelerated the electrification of automotive, aerospace, and industrial drive systems. Although higher switching frequencies, faster voltage slew rates, and elevated DC-link voltages improve p…
  datacite Kangbeen Lee 2026 置信度 0.66 Electrical machines and drives
• <b>PARTIAL DISCHARGE SIGNATURES WITH ELECTROMAGNETIC INTERFERENCE ANALYSIS IN WBG-BASED AC MACHINE DRIVES</b>
  The rapid adoption of wide-bandgap (WBG) semiconductor devices has accelerated the electrification of automotive, aerospace, and industrial drive systems. Although higher switching frequencies, faster voltage slew rates, and elevated DC-link voltages improve p…
  datacite Kangbeen Lee 2026 置信度 0.66 Electrical machines and drives
• Design and Reliability Challenges in Vertical GaN Power Devices
  Gallium nitride (GaN), a wide-bandgap semiconductor with high critical electric field, high electron mobility, and fast switching capability, is a key enabler for next-generation power electronic systems. While lateral GaN HEMTs currently dominate commercial a…
  datacite Dr. Matthew Smith 2026 置信度 0.66
• Design and Reliability Challenges in Vertical GaN Power Devices
  Gallium nitride (GaN), a wide-bandgap semiconductor with high critical electric field, high electron mobility, and fast switching capability, is a key enabler for next-generation power electronic systems. While lateral GaN HEMTs currently dominate commercial a…
  datacite Dr. Matthew Smith 2026 置信度 0.66
• Ab initio Phase Diagram of Ta2O5
  Tantalum pentoxide (Ta2O5) is a polymorphic wide-bandgap semiconductor with outstanding dielectric properties and widespread use in optical and electronic technologies. Its rich structural diversity, arising from multiple polymorphs accessible under different …
  datacite Gong, Yan, Tang, Huimin, Yang, Yong, Kawazoe, Yoshiyuki 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciences
• IEEE EDS Delhi Chapter Summer School: October 8, 2025
  This short course features three presentations from the third day of a summer school focused on semiconductor device technologies. The first presentation covers three-nitride device technology for optoelectronics, detailing the principles, applications, and fa…
  datacite Dr. Kamal Lohani, Scientist ‘F’, Dr. Sudhir Kumar, Scientist – ‘F’ 等 2025 置信度 0.66
• Postmodern Physics of Hamzah Information.(9)
  تحلیل جامع، بازنویسیِ بنیادین و اثبات تانسوری «معما و پدیده به تله افتادن حامل‌ها در سطح قطعه (Surface Trapping) در ترانزیستورهای فرکانس بالا (HEMT / GaN) و افت جریان (Current Collapse)» بر اساس پارادایم فیزیک اطلاعات حمزه (HIP) و منطق دترمینیسیتی ماتریس ۱۱۵۵ …
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Electrical and Optical Properties of Free-standing Oxide Membranes for Flexible 2D Microelectronics
  In recent years, integrating high-quality gate dielectrics into flexible and two-dimensional (2D) electronic devices is still a key challenge for designing next-generation electronics, due to the requirements on electrostatic control, leakage suppression, mech…
  datacite Liu, Zhewei 2026 置信度 0.66 4016 Materials engineering401605 Functional materials
• Ultra-high Mobility 2DEG Heterostructure Fabricate by Oxide Molecular Beam Epitaxy for Device Application
  LaAlO3/SrTiO3 heterostructures with two-dimensional electron gas (2DEG) interface have been reported with remarkable electron transport properties, which is the demand for application of wide bandgap semiconductor devices in modern power electronics industries…
  datacite Wang, David 2024 置信度 0.66
• Optical Properties of Aluminum Nitride Thin Films Prepared by Magnetron Sputter Epitaxy
  Aluminum nitride (AlN) due to its wide bandgap, electro-optic coefficient, nonlinear effects, high thermal conductivity, and complementary metal-oxide semiconductor compatibility has emerged as an attractive material for optical wave guides and modulators that…
  datacite Sundarapandian, Balasubramanian, Kirste, Lutz, Stranak, Patrik, Prescher, Mario 等 2025 置信度 0.66
• Temperature dependent excitonic effects in silicon
  The exciton binding energy and phonon energies are the two key parameters in defining the bandgap energy of a semiconductor. A more accurate measurement of bandgap energy can be obtained by adding the excitonic binding energy and the corresponding phonon energ…
  datacite Xu, Xiaoqi 2018 置信度 0.66 SpectroscopySiliconCharacterizationWMS
• Data and supplementary results underlying the PhD thesis: Micromachining and Device Technologies for 4H-SiC Microsystems in Harsh Environments
  This dataset contains supplementary material and underlying research data for the PhD thesis "Micromachining and Device Technologies for 4H-SiC Microsystems in Harsh Environments." Research Context Silicon carbide (4H-SiC) is a leading wide-bandgap semiconduct…
  datacite Jiarui Mo 2026 置信度 0.66 Electrical and Electronic EngineeringEngineeringSilicon carbideetchingsensors
• Data and supplementary results underlying the PhD thesis: Micromachining and Device Technologies for 4H-SiC Microsystems in Harsh Environments
  This dataset contains supplementary material and underlying research data for the PhD thesis "Micromachining and Device Technologies for 4H-SiC Microsystems in Harsh Environments." Research Context Silicon carbide (4H-SiC) is a leading wide-bandgap semiconduct…
  datacite Jiarui Mo 2026 置信度 0.66 Electrical and Electronic EngineeringEngineeringSilicon carbideetchingsensors
• A Neuroevolution Potential for Gallium Oxide: Accurate and Efficient Modeling of Polymorphism and Swift Heavy-Ion Irradiation
  Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor with promising applications in high-power and high-frequency electronics. However, its complex polymorphic nature poses substantial challenges for fundamental studies, particularly in understanding phase-tr…
  datacite Lijun Xu, Linyang Jiang, Yaohui Gu, Haizhou Xue 等 2026 置信度 0.66 Physical sciences
• A Neuroevolution Potential for Gallium Oxide: Accurate and Efficient Modeling of Polymorphism and Swift Heavy-Ion Irradiation
  Gallium oxide (Ga₂O₃) is a wide-bandgap semiconductor with promising applications in high-power and high-frequency electronics. However, its complex polymorphic nature poses substantial challenges for fundamental studies, particularly in understanding phase-tr…
  datacite Lijun Xu, Linyang Jiang, Yaohui Gu, Haizhou Xue 等 2026 置信度 0.66 Physical sciences
• Visible-Light-Driven Room Temperature Gas Sensors Based on Metal Oxide Semiconductors
  In recent years, the escalating demand for highly sensitive, selective, and energy-efficient gas sensors has become paramount due to their widespread applications in environmental monitoring, industrial process control, personal safety, and medical diagnostics…
  datacite Qomaruddin 2026 置信度 0.66 Visible-Light-Driven Gas SensorsRoom-Temperature Gas SensingMetal Oxide SemiconductorsAu-Decorated ZnO NanorodsCaFe₂O₄ Nanoparticles
• Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
  4H-SiC is a wide-bandgap semiconductor with high displacement threshold energy, large critical electric field, and low intrinsic carrier concentration, making it attractive for radiation-hard detector applications. In this work, we investigate the electrical c…
  datacite Kroll, Jiří, Federičová, Pavla, Chochol, Jan, Klimsza, Adam 等 2026 置信度 0.66 Instrumentation and Detectors (physics.ins-det)FOS: Physical sciences
• <strong>Valence-band engineering of robust p-type Ni<em>_x</em>Ga_1-<em>x</em>O enabling Ga₂O₃ p-n bipolar junction</strong>
  The absence of a reliable p-type ultrawide bandgap (UWBG) semiconductor remains a fundamental obstacle to the realization of bipolar Ga 2 ​O 3 ​-based power devices. Here, we demonstrate valence-band engineering in Ni-alloyed Ga 2 O 3 (Ni x Ga 1- x O)​ to achi…
  datacite Xiong Chen, Yurong Luo, Chao Ping Liu, Jiandong Ye 等 2026 置信度 0.66 Physical sciences
• <strong>Valence-band engineering of robust p-type Ni<em>_x</em>Ga_1-<em>x</em>O enabling Ga₂O₃ p-n bipolar junction</strong>
  The absence of a reliable p-type ultrawide bandgap (UWBG) semiconductor remains a fundamental obstacle to the realization of bipolar Ga 2 ​O 3 ​-based power devices. Here, we demonstrate valence-band engineering in Ni-alloyed Ga 2 O 3 (Ni x Ga 1- x O)​ to achi…
  datacite Xiong Chen, Yurong Luo, Chao Ping Liu, Jiandong Ye 等 2026 置信度 0.66 Physical sciences
• Physical Properties of High-Performance SrTiO3 Homosuperlattices Grown by Oxide Molecular Beam Epitaxy
  Complex oxides have raised extensive interests due to their wide range of properties, ranging from metallic to semiconductor to insulator. For the perovskite oxides with the chemical formula ABO3 (e.g. SrTiO3), a more comprehensive electronic configurations ca…
  datacite Liu, Yichen 2023 置信度 0.66 4016 Materials engineering
• Defect analysis of Al-delta-doped ZnO thin films by positron annihilation spectroscopy
  Zinc oxide (ZnO) is a wide-bandgap semiconductor with excellent optical and electrical properties, making it a promising material for a wide range of applications in optoelectronics and sensors. The properties of ZnO can be easily modified through doping and d…
  datacite Zhang, Guoxiu, Liedke, Maciej Oskar, Butterling, Maik, Hirschmann, Eric 等 2026 置信度 0.66 Positron annihilationDelta-dopingZinc oxide (ZnO)Defect analysisAtomic layer deposition (ALD)
• <strong>Two-Dimensional Electron Gas at Ga₂O₃ Heterojunctions: Progress, Challenges, and Future Prospects</strong>
  In recent times, the semiconductor (SC) power electronics industry has experienced a renewed interest in wide bandgap SCs, with the intent of exploiting their superior performance characteristics, particularly the excellent breakdown fields ( E BR ). One of th…
  datacite Ankush Bag, Rahul Kumar, Antony David 2026 置信度 0.66 Engineering
• <strong>Two-Dimensional Electron Gas at Ga₂O₃ Heterojunctions: Progress, Challenges, and Future Prospects</strong>
  In recent times, the semiconductor (SC) power electronics industry has experienced a renewed interest in wide bandgap SCs, with the intent of exploiting their superior performance characteristics, particularly the excellent breakdown fields ( E BR ). One of th…
  datacite Ankush Bag, Rahul Kumar, Antony David 2026 置信度 0.66 Engineering
• Exceptionally high carrier mobility in hexagonal diamond
  Hexagonal diamond (h-diamond), or Lonsdaleite, is a promising wide-bandgap semiconductor known for its high thermal conductivity and hardness. Based on \textit{ab initio} calculations, we demonstrate its exceptionally high carrier mobilities. At room temperatu…
  datacite He, Zirui, Gao, Shang-Peng, Chen, Meng 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciences
• Color Centers in Cubic Boron Nitride
  Cubic boron nitride (c-BN) is a wide-bandgap semiconductor (WBGS) with potential applications in both power electronics and quantum technologies. Color centers in WBGS can be used as single photon emitters and quantum sensors. Several zero phonon lines have be…
  datacite Stenlund, William, Davidsson, Joel, Ivády, Viktor, Armiento, Rickard 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciences81
• Self-reducing precursors for aluminium metal thin films: evaluation of stable aluminium hydrides for vapor phase aluminium deposition
  Thin films of Al as interconnect materials and those of AlN as wide bandgap semiconductor and piezoelectric material are of great interest for microelectronic applications. For the fabrication of these thin films via chemical vapor deposition (CVD) based route…
  datacite Huster, Niklas, Mullins, Rita, Nolan, James, Devi, Anjana 等 2024 置信度 0.66
• QUANTUM SENSING WITH SPIN DEFECTS IN LOW-DIMENSIONAL MATERIALS
  Optically addressable spin defects in solid-state materials are a cornerstone of modern quantum sensing and quantum information science. Their ability to be initialized, manipulated, and read out optically at room temperature makes them attractive platforms fo…
  datacite Sumukh Vaidya 2026 置信度 0.66 Atomic and molecular physicsQuantum technologiesQuantum computationQuantum optics and quantum optomechanicsQuantum information, computation and communication
• QUANTUM SENSING WITH SPIN DEFECTS IN LOW-DIMENSIONAL MATERIALS
  Optically addressable spin defects in solid-state materials are a cornerstone of modern quantum sensing and quantum information science. Their ability to be initialized, manipulated, and read out optically at room temperature makes them attractive platforms fo…
  datacite Sumukh Vaidya 2026 置信度 0.66 Atomic and molecular physicsQuantum technologiesQuantum computationQuantum optics and quantum optomechanicsQuantum information, computation and communication
• INTEGRATED THERMAL MANAGEMENT OF HIGH-POWER ELECTRONICS: FROM DIE-LEVEL DESIGNS TO COMPONENT-LEVEL TWO-PHASE COOLING.
  Thermal management has become a critical challenge in modern semiconductor devices as increasing power densities push the limits of conventional cooling technologies. Rapid advances in electronic technologies, including artificial intelligence (AI)-driven comp…
  datacite Guye, Kidus Jeglalo 2026 置信度 0.66 EngineeringAlGaN devicesData Center CoolingHollow micropillarThermal management of electronics devices
• Co-doping of ultra/wide-bandgap III-nitride semiconductors for achieving conductive p-type
  Objective This project investigates novel co-doping pathways in gallium nitride (GaN), aluminum gallium nitride (AlGaN), and aluminum nitride (AlN) semiconductors to achieve highly conductive p-type materials. The primary goal is to identify and engineer accep…
  datacite Mykhailo Vorobiov, Denis Demchenko, Michael Reshchikov, Caleb Urbano 2024 置信度 0.66 Physical Sciences and MathematicsAlGaNGaNdefectssemiconductors
• Photophysics at interfaces between metal-halide semiconductors and charge-transport layers
  Metal-halide semiconductors have emerged as promising materials for solar cells, with lead-based perovskites demonstrating remarkable efficiencies in tandem architectures. Yet, their performance still falls short of the theoretical limit, especially for wide-b…
  datacite Lee, J 2025 置信度 0.66 PhysicsChemistrySpectroscopy
• Data for "Constant photocurrent method to probe the sub-bandgap absorption in wide bandgap semiconductor films: the case of α-Ga2O3"
  Here we present a revival of the constant photocurrent method to measure sub-bandgap absorption in wide bandgap semiconductor films. The method involves maintaining a constant photocurrent by continually adjusting the impinging photon flux across the energy sp…
  datacite Nicol, David, Reynolds, S, Roberts, J, Jarman, J 等 2024 置信度 0.66
• High performance solid-state mesoscopic solar cells
  Mesoscopic sensitized solar cells are one of the most promising third-generation photovoltaic technologies. Dye-sensitized solar cells (DSCs), imitating the photosynthesis of green plants, were the first photovoltaic devices to utilize a mesoscopic heterojunct…
  datacite Burschka, Julian 2013 置信度 0.66 organic electronicsphotovoltaicssolid-state dye-sensitzed solar cellhybrid solar cellhole-transporting material
• Molecular beam epitaxy of wide bandgap semiconductor nanostructures and devices
  Project 38283 funded ($180000) by the Canada Foundation for Innovation (John R. Evans Leaders Fund) / Projet 38283 financé (180000 $) par la Fondation canadienne pour l'innovation (Fonds des leaders John-R.-Evans)
  datacite Canada Foundation for Innovation | Fondation canadienne pour l'innovation 2018 置信度 0.66
• β-Ga2O3-Based Heterojunctions: Exploring Growth Orientations and Alloying on Electronic Properties
  We investigate the effects of alloying and growth orientation on the electronic properties of the ultra-wide bandgap semiconductor β-Ga2O3 and pseudomorphic (AlxGa1-x)2O3 alloy heterojunctions. Band offsets are computed from first principles using density func…
  datacite Fadla, Mohamed Abdelilah, Agrawal, Khushabu, La Torraca, Paolo, Grüning, Myrta 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• Simulation-Based Performance Analysis of Auxetic Lonsdaleite Toroidal Mesh Structures for Thermal Management and Mechanical Resilience in GaN HEMT Devices
  This preprint presents a simulation-based investigation of auxetic toroidal mesh structures fabricated from lonsdaleite for applications requiring combined thermal management and high-strain mechanical performance, with particular relevance to high-power Galli…
  datacite Roebuck, Andrew 2026 置信度 0.66 Lonsdaleite, auxetic metamaterial, thermal management, GaN HEMT, high-strain materials, piezoelectric response, metamaterial design
• Simulation-Based Performance Analysis of Auxetic Lonsdaleite Toroidal Mesh Structures for Thermal Management and Mechanical Resilience in GaN HEMT Devices
  This preprint presents a simulation-based investigation of auxetic toroidal mesh structures fabricated from lonsdaleite for applications requiring combined thermal management and high-strain mechanical performance, with particular relevance to high-power Galli…
  datacite Roebuck, Andrew 2026 置信度 0.66 Lonsdaleite, auxetic metamaterial, thermal management, GaN HEMT, high-strain materials, piezoelectric response, metamaterial design
• Mechanisms of nucleation, dislocation formation, and stress evolution during atomistic growth of SiC films on miscut 4H-SiC substrates
  Atomistic simulations are performed to investigate the vapor-phase deposition, and growth of silicon carbide (SiC) thin films on 4H-SiC substrates with varying miscut angles and substrate temperatures. Substrate temperatures of T=2200 K, 2300 K, and 2400 K and…
  datacite Gersappe, Dilip, Raghothamachar, Balaji, Kayang, Kevin, Dudley, Michael 2026 置信度 0.66 Engineering
• Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe$_2$
  Bilayers of transition-metal dichalcogenides show many exciting features, including long-lived interlayer excitons and wide bandgap tunability using strain. Not many investigations on experimental determinations of deformation potentials relating changes in op…
  datacite Prasad, Indrajeet Dhananjay, Shit, Sumitra, Waheed, Yunus, Surendran, Jithin Thoppil 等 2024 置信度 0.66 Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Materials Science (cond-mat.mtrl-sci)Applied Physics (physics.app-ph)Optics (physics.optics)FOS: Physical sciences
• Advanced Electro-Thermal Modeling of Edge Termination in Diamond and Ultra-Wide Bandgap Power Devices
  Traditional design and optimization of Si-based power devices rely on quasi-static edge termination modeling that has proven to be effective in reproducing experimental results. However, this approach fails to accurately describe emerging wide- and ultra-wide …
  datacite Kah, Martin, Donato, Nazareno, Rouger, Nicolas, Watkins, Rebecca 等 2026 置信度 0.66 40 Engineering4009 Electronics, Sensors and Digital Hardware
• External Factors Affecting Semiconductors: Silicon vs. Silicon Carbide and Gallium Nitride — A Comparative Analysis and Future Outlook
  This paper presents a comprehensive theoretical investigation into how external physical, chemical, and environmental factors affect the electrical and structural properties of semiconductors. The study is divided into two major parts. The first part examines …
  datacite Rakhymberdi, Aisultan, Kim, Alan 2026 置信度 0.66
• External Factors Affecting Semiconductors: Silicon vs. Silicon Carbide and Gallium Nitride — A Comparative Analysis and Future Outlook
  This paper presents a comprehensive theoretical investigation into how external physical, chemical, and environmental factors affect the electrical and structural properties of semiconductors. The study is divided into two major parts. The first part examines …
  datacite Rakhymberdi, Aisultan, Kim, Alan 2026 置信度 0.66
• Ultrafast spectroscopy of wide bandgap semiconductor nanostructures
  Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of high…
  datacite Shahmohammadi, Mehran 2015 置信度 0.66 III-nitridesZnOexternal quantum efficiencyexcitonsbiexcitons
• An ultra-wide-bandgap semiconductor photodetector for linear measurement of bright sub-bandgap light
  Semiconductor photodetectors are conventionally optimized for sensing weak optical signals, and they typically saturate at low-to-moderate light intensity. Here, we demonstrate sub-bandgap AlN photodetectors that exhibit non-saturating linear response to ultra…
  datacite Dong, Jiahao, Liu, Zhenjing, Jaramillo, Rafael 2026 置信度 0.66 Optics (physics.optics)Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Window Layers for Silicon Heterojunction Solar Cells : Properties and Impact on Device Performance
  Currently, crystalline silicon (c-Si) wafer-based solar cells dominate the photovoltaic market (80-90%). In this thesis we concentrate on silicon heterojunction (SHJ) solar cells that--in contrast to diffused homojunction cells--rely on the application of amor…
  datacite Seif, Johannes Peter 2015 置信度 0.66 high-efficiencycrystalline silicon heterojunction solar cellsoptical losseswindowlayerstransport losses
• Single Atom-modified TiO2-based Catalysts for Photoelectrochemical Water Splitting: From Fundamentals to Future Prospects
  europepmc 2026 置信度 0.80
• High Temperature Excitonic Insulator and Possible Superfluid Based on Two-Dimensional Diamond
  europepmc 2025 置信度 0.80
• Direct Bonding of 6-inch SiC/Si Wafer with Enhanced Thermal Interface
  europepmc 2025 置信度 0.80
• Dynamic control of X-ray core-exciton resonances by Coulomb screening in photoexcited semiconductors
  preprints 2025 置信度 0.74
• Theoretical Investigation of Ru-doped Wurtzite ZnO: A Promising Material for Enhanced Photocatalytic Activity
  preprints 2025 置信度 0.74
• Is GaN the Enabler of High Power Density Converters? An Overview of the Technology, Devices, Circuits, and Applications
  preprints 2025 置信度 0.74
• Equilibrium Analysis and Design Optimization of Power Converters: Principles, Challenges, and Future Directions
  preprints 2025 置信度 0.74
• Effect of the Doping Gradient of 4H-SiC Aluminum-implanted Floating Field Rings for Edge Termination
  preprints 2025 置信度 0.74
• Facet-Engineered Flexoelectricity of Centrosymmetric Semiconductors
  preprints 2025 置信度 0.74
• Sustainable Manufacturing and Applications of Wide-Bandgap Semiconductors
  europepmc 2024 置信度 0.80
• Ultralow-temperature ultrafast formation of single-crystalline graphene via metal-assisted graphitization of silicon-carbide
  preprints 2025 置信度 0.74
• Nanomaterial ZnO Synthesis and Its Photocatalytic Applications-A Review
  preprints 2025 置信度 0.74
• Engineered interfaces in indium-hafnium oxide catalysts unlock superior methanol productivity
  preprints 2025 置信度 0.74
• Water and Seawater Splitting with MgB2 Plasmonic Metal-Based Photocatalyst
  preprints 2024 置信度 0.74
• Impact of Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films
  preprints 2024 置信度 0.74
• Highly Stable Two-Dimensional Carbon Allotropes Based on Azulenoid Kekulene
  preprints 2023 置信度 0.74
• Nanostructured Electrospun Fibers with Self-assembled Cyclo-L-Tryptophan-L-Tyrosine Dipeptide as Piezoelectric Materials and Optical Second Harmonic Generators
  preprints 2023 置信度 0.74
• Dual-band polarized photodetector based on van der Waals heterojunction
  preprints 2023 置信度 0.74
• Switching Performance Enhancement in Gallium Oxide-based Multilevel RRAM Devices using Graphene Oxide Insertion Layer
  preprints 2023 置信度 0.74
• Ab-initio investigation of Structural, Opto-Electronic and Thermodynamic properties of ZnAl 2 Se 4 for photovoltaic applications
  preprints 2023 置信度 0.74
• Abnormal SPR-mediated photocatalytic enhancement of Ag nanocubes covered by AgCl ultra-thin layer
  preprints 2022 置信度 0.74