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• In-chip critical plasma seeds for laser writing of reconfigurable silicon photonics systems
  preprints 2024 置信度 0.74
• Liquid Ga-In-Sn alloys printing of novel GaInSnO ultra-thin semiconductor films and controllable performance field effect transistors
  preprints 2022 置信度 0.74
• Room-temperature printing of 2D GaN semiconductor via liquid metal gallium surface confined nitridation reaction
  preprints 2021 置信度 0.74
• Complex Ga2O3 Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials
  preprints 2022 置信度 0.74
• High Thermal Conductivity in Wafer-Scale Cubic Silicon Carbide Crystals
  preprints 2022 置信度 0.74
• Micro-Raman and X-ray Photoemission Spectroscopic Investigations of Heterojunction Between Delafossite CuGaO2 and Wurtzite ZnO Obtained by Hydrothermal Method
  preprints 2022 置信度 0.74
• Semiconductor-based photocatalytic degradation of Antiviral drug pollutants: A mini review
  preprints 2023 置信度 0.74
• High-refractive index and mechanically cleavable non-van der Waals InGaS3
  preprints 2022 置信度 0.74
• Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates
  Abstract High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m −1 K −1 ) cooling substrates into the wide-bandgap semiconductor of gallium …
  preprints 2022 置信度 0.74
• Strain-Tuned Structural, Mechanical and Electronic Properties of Two-Dimensional Transition Metal Sulfides ZrS2: A First Principles Study1
  preprints 2021 置信度 0.74
• Computational Structural, Electronic and Optical Properties of the Palmitic Acid in its C Form
  preprints 2021 置信度 0.74
• Integrated silicon carbide modulator for CMOS photonics
  preprints 2021 置信度 0.74
• Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
  preprints 2022 置信度 0.74
• Electro-Absorption Modulation in GeSn Alloys for Wide-Spectrum Mid-Infrared Applications
  preprints 2021 置信度 0.74
• On the Examination of Temperature-Dependent Possible Current-Conduction Mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky Barrier Diodes in Wide Range of Voltage
  preprints 2021 置信度 0.74
• Tunable Photodetectors via in Situ Thermal Conversion of TiS₃ to TiO₂
  preprints 2020 置信度 0.74
• An Enhanced Two-Dimensional Hole Gas (2DHG) C-H Diamond with Positive Surface Charge Model for Advanced Normally-Off MOSFET Devices
  preprints 2020 置信度 0.74
• Fabrication of Black In2O3 with Dense Oxygen Vacancy through Dual Functional Carbon Doping for Enhancing Photothermal CO2 Hydrogenation
  preprints 2020 置信度 0.74
• Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems
  preprints 2020 置信度 0.74
• Visible Light-Driven Photoelectrochemical Platform Probing Highly Sensitive Virus Detection
  preprints 2022 置信度 0.74
• A novel sensor for antiviral drug Favipiravir in the treatment of COVID-19 designed by G/In 2 O 3 nanomaterial
  preprints 2022 置信度 0.74
• Index
  crossref 2019-06-21T15:38:51Z 置信度 0.70
• Front Matter
  crossref 2019-06-21T11:38:50Z 置信度 0.70
• Front Matter
  crossref 2018-06-01T14:25:39Z 置信度 0.70
• Front-matter
  crossref 2018-10-26T18:48:08Z 置信度 0.70
• Front Matter
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• Rashba Hamiltonian
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Front Matter
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Design and modeling of next-generation HEMTs : from wide- to ultra-wide-bandgap semiconductor technologies
  The rapid advancement of power and radio-frequency (RF) electronics demands semiconductor devices capable of efficient operation under high-voltage, high-frequency, and high-temperature conditions. Wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) materials, pa…
  crossref Md Maruf Hossain 2026-08-19T21:08:26Z 置信度 0.70
• Novel wide bandgap semiconductor material based on ternary carbides - An investigation into Al4SiC4
  Nouveau matériau semi-conducteur à large bande interdite à base de carbures ternaires - Enquête sur Al4SiC4 Les matériaux semi-conducteurs à large bande interdite sont capables de résister aux environnements difficiles et de fonctionner dans une large plage de…
  crossref Simon Forster 2026-04-03T21:21:00Z 置信度 0.70
• GaN Band Structure
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS
  crossref M. Sugimoto, H. Ueda, T. Uesugi, T. Kachi 2007-12-16T20:52:58Z 置信度 0.70
• A Wide-Bandgap Molecular Ferroelectric Semiconductor with a Two-Step Wide-Temperature Second Harmonic Generation Response: [FMeQ]2ZnI4
  crossref 2026-03-15T13:01:01Z 置信度 0.70
• Properties of Group III Nitride Semiconductor Materials
  crossref 2016-11-14T13:13:51Z 置信度 0.70
• MOCVD growth of gallium nitride
  crossref E.J. Thrush 2005-12-13T21:10:13Z 置信度 0.70
• SiC power device design and fabrication
  crossref Noriyuki Iwamuro 2018-10-26T18:46:22Z 置信度 0.70
• Reliability evaluation
  crossref Josef Lutz, Thomas Aichinger, Roland Rupp 2018-06-01T18:25:55Z 置信度 0.70
• Technology issues affecting GaN devices
  crossref L.B. Flannery 2005-12-13T21:10:13Z 置信度 0.70
• Prospects for GaN optoelectronic devices
  crossref C.T. Foxon 2005-12-13T16:10:13Z 置信度 0.70
• Nitride Wide Bandgap Semiconductor Material and Electronic Devices
  crossref Yue Hao, Jin Feng Zhang, Jin Cheng Zhang 2016-11-14T18:13:51Z 置信度 0.70
• Protection design for double pulse test
  crossref 2018-09-04T04:10:05Z 置信度 0.70
• Introduction
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• Microbeam Laser Characterization in MnPS3(MnPSe3)WS2 Wide-Bandgap Semiconductor Heterojunction Photodetectors
  crossref 2026-04-18T14:00:41Z 置信度 0.70
• Rashba Spin Splitting in III-Nitride Heterostructures and Quantum Wells
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• Development of Nitride Semiconductor Materials and Electronic Devices
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• Thermal transient testing
  crossref Gábor Farkas, Tomoaki Hara, Márta Rencz 2018-06-01T14:25:23Z 置信度 0.70
• Characterization of Wide Bandgap Power Semiconductor Devices
  crossref Fei (Fred) Wang, Zheyu Zhang, Edward A. Jones 2018-09-04T08:10:05Z 置信度 0.70
• Front matter
  crossref 2016-11-14T18:13:51Z 置信度 0.70
• Solid-state electroluminescence from porous silicon
  crossref A.J. Simons 2005-12-13T16:10:13Z 置信度 0.70
• Wide bandgap semiconductor power electronics
  crossref C.E. Weitzel 2002-11-27T19:40:59Z 置信度 0.70
• Computer-aided engineering simulations
  crossref Amir Sajjad Bahman, Francesco Iannuzzo 2018-06-01T18:25:49Z 置信度 0.70
• Recent progress of boron nitrides
  crossref Xingwang Zhang, Junhua Meng 2019-06-21T11:38:10Z 置信度 0.70
• Measurement and data processing for dynamic characterization
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• Cu2I2Se6: A MetalInorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature
  crossref 2020-04-03T14:44:53Z 置信度 0.70
• Future technology trends
  crossref Leo Lorenz, Tobias Erlbacher, Oliver Hilt 2018-06-01T18:26:05Z 置信度 0.70
• Special issue on wide-bandgap semiconductor power electronics
  crossref Jun Suda 2016-01-26T06:13:22Z 置信度 0.70
• Integrating Wide Bandgap Semiconductor Technologies into Emerging Mobile Energy Supply Systems
  crossref Kaiqing Qiu, Yufeng Wang, Yue Zhou, Wenlong Ming 等 2024-12-19T19:17:27Z 置信度 0.70
• Progress in wide bandgap semiconductor SiC for power devices
  crossref H. Matsunami 2002-11-07T17:04:51Z 置信度 0.70
• Cu2I2Se6: A MetalInorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature
  crossref 2020-04-03T14:44:53Z 置信度 0.70
• Method maps electric field of wide-bandgap semiconductor in 3D
  Two-photon absorption transient current technique reveals charge carrier transport properties, as well as relationship between structural defects and electric field inside diamond sample.
  crossref Chris Patrick 2019-05-22T14:57:50Z 置信度 0.70
• Ion implantation in wide and ultra-wide bandgap semiconductors
  crossref Stephen J. Pearton, Fan Ren, Honggyu Kim 2023-08-02T17:50:35Z 置信度 0.70
• Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers
  crossref J.C.M. Hwang 2003-01-20T15:21:27Z 置信度 0.70
• Appendix B: Data processing code for dynamic characterization
  crossref 2018-09-04T04:10:05Z 置信度 0.70
• Rashba Spin Splitting in III-Nitride Heterostructures and Quantum Wells
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Chapter 10 Quantum Anomalous Hall Effect in Wurtzite Quantum Wells
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Machine-Learning-Enabled Discovery of Coexisting Phases through Nanospectroscopy of a Wide-Bandgap Semiconductor
  crossref 2025-12-18T14:50:38Z 置信度 0.70
• Low-dimensional β-gallium oxide semiconductor devices
  crossref Suhyun Kim, Jinho Bae, Janghyuk Kim, Jihyun Kim 2020-10-01T10:23:35Z 置信度 0.70
• Materials issues for AlGaInP visible light emitters
  crossref S.W. Bland 2005-12-13T21:10:13Z 置信度 0.70
• GaN-on-GaN power device design and fabrication
  crossref Srabanti Chowdhury 2018-10-26T18:46:45Z 置信度 0.70
• Establishing Doping Limits for ZnGa2O4 for Ultra Wide Bandgap Semiconductor Applications
  ZnGa2O4 is an ultra-wide bandgap oxide with promising applications as a transparent conductor and deep-UV electronic material. Despite this, its transport and doping limits remain poorly defined. Here, we present a comprehensive computational study combining h…
  crossref Romain Claes, Alexander G. Squires, David O. Scanlon 2025-09-29T10:10:20Z 置信度 0.70
• Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices
  crossref Dominique Planson, Camille Sonneville, Pascal Bevilacqua, Dominique Tournier 2023-11-06T19:09:21Z 置信度 0.70
• Wide Band-Gap Semiconductor Nuclear Radiation Detector
  crossref Yuming Zhang, Hui Guo, Jinfeng Zhang, Chiwen Qian 等 2025-09-26T06:24:42Z 置信度 0.70
• Characterization and implementation of wide-bandgap semiconductor power devices : dynamic IOFF of GaN HEMT and GaN/SiC cascode device
  crossref Yuru Wang 2023-02-21T22:46:15Z 置信度 0.70
• Ultra-wide bandgap semiconductor materials, processing, and devices
  crossref Jiangwei Liu, Jiwu Lu, A.F.M. Anhar Uddin Bhuiyan 2025-05-03T15:15:28Z 置信度 0.70
• Wide Bandgap Based Devices
  crossref 2021-07-01T06:11:02Z 置信度 0.70
• RF Power Transistors from Wide Bandgap Materials
  crossref Karen E. Moore 2018-12-16T09:37:31Z 置信度 0.70
• Physical properties of gallium nitride and related III–V nitrides
  crossref Ishwara Bhat 2018-10-26T14:46:30Z 置信度 0.70
• RF Power Transistors from Wide Bandgap Materials
  crossref Karen Moore 2010-02-23T15:02:18Z 置信度 0.70
• Molecular beam epitaxy integration of magnetic ferrites with wide bandgap semiconductor 6H-SiC for next-generation microwave and spintronic devices
  crossref Zhuhua Cai 2021-05-10T17:10:59Z 置信度 0.70
• Intermixing for the integration of visible laser diode devices
  crossref C.J. Hamilton 2005-12-13T21:10:13Z 置信度 0.70
• Appendix A: Recommended equipment and components list for DPT setup
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• GaN smart power devices and integrated circuits
  crossref T. Paul Chow, Zhibo Guo 2018-10-26T14:47:09Z 置信度 0.70
• Wide Bandgap Tellurium Oxide Semiconductor as A Back Contact Modifier for Efficient nip Sb2Se3 Solar Cells
  crossref 2025-02-21T06:56:30Z 置信度 0.70
• Effect of Voltage Probes on the Characterisation of Switching Processes in Wide-bandgap Semiconductor Devices
  crossref Yishun Yan, Lurenhang Wang, Xuchong Cai, Mingcheng Ma 等 2025-10-07T17:34:49Z 置信度 0.70
• Ultra-Wide Bandgap Al_xGa_1-xN Channel Transistors
  crossref Towhidur Razzak, Siddharth Rajan, Andrew Armstrong 2019-12-10T02:56:16Z 置信度 0.70
• Novel Materials and Structures for Wide and Ultra-Wide Bandgap Semiconductor Switches
  crossref A. Christou 2021-06-22T16:41:11Z 置信度 0.70
• Room temperature UV lasing from photopumped ZnCdS/ZnS quantum wells
  crossref K.B. Ozanyan 2005-12-13T21:10:13Z 置信度 0.70
• Understanding interfaces for homoepitaxial GaN growth
  crossref Jennifer Hite, Michael A Mastro 2020-10-01T10:23:35Z 置信度 0.70
• Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets
  crossref 2023-11-14T09:01:25Z 置信度 0.70
• Electron Trapping Enhanced Deep-Ultraviolet Optoelectronic Synapses Based on Two-Dimensional Wide-Bandgap Perovskite/Organic-Semiconductor Heterojunctions
  crossref 2025-09-25T22:51:44Z 置信度 0.70
• Wide bandgap semiconductor microwave technologies: from promise to practice
  crossref J.C. Zolper 2003-01-22T14:44:06Z 置信度 0.70
• Microwave power amplifiers fabricated from wide bandgap semiconductor transistors
  crossref R.J. Trew 2003-01-22T17:08:40Z 置信度 0.70
• The design and development of II-VI blue-green VCSELs
  crossref W. Meredith 2005-12-13T21:10:13Z 置信度 0.70