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• A Study on Doping Effects in Silicon Nanostructures for Enhanced Electrical Conductivity
  Silicon continues to be the cornerstone of modern semiconductor technology owing to its abundance, stability, and versatility in electronic applications. However, the miniaturization of devices and the emergence of nanostructured materials have demanded improv…
  datacite Harish, J. Shalini, R. Ankit, Y. P. Kumar 2025 置信度 0.66 Silicon nanostructures, doping, electrical conductivity, carrier mobility, semiconductor physics
• A Study on Doping Effects in Silicon Nanostructures for Enhanced Electrical Conductivity
  Silicon continues to be the cornerstone of modern semiconductor technology owing to its abundance, stability, and versatility in electronic applications. However, the miniaturization of devices and the emergence of nanostructured materials have demanded improv…
  datacite Harish, J. Shalini, R. Ankit, Y. P. Kumar 2025 置信度 0.66 Silicon nanostructures, doping, electrical conductivity, carrier mobility, semiconductor physics
• Midinfrared Semiconductor Photonics - A Roadmap
  Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of current practical needs. These include chemical sensing, environmental monitoring, …
  datacite Meyer, J. R., Vurgaftman, I., Yu, S. -Q., Yang, R. Q. 等 2025 置信度 0.66 Optics (physics.optics)FOS: Physical sciencesFOS: Physical sciences
• Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum technologies
  The continuous miniaturisation of metal-oxide-semiconductor field-effect transistors (MOSFETs) from long- to short-channel architectures has advanced beyond the predictions of Moore's Law. Continued advances in semiconductor electronics, even near current scal…
  datacite Xiong, Yusheng, Delfanazari, Kaveh 2025 置信度 0.66 Systems and Control (eess.SY)Hardware Architecture (cs.AR)Quantum Physics (quant-ph)FOS: Electrical engineering, electronic engineering, information engineeringFOS: Electrical engineering, electronic engineering, information engineering
• Polarization anisotropy in nanowires: Fundamental concepts and progress towards terahertz-band polarization devices
  Pronounced polarization anisotropy in semiconductor nanowires has been exploited to achieve polarization-sensitive devices operating across the electromagnetic spectrum, from the ultraviolet to the terahertz band. This contribution describes the physical origi…
  datacite Johnston, Michael B, Joyce, Hannah J 2022 置信度 0.66 51 Physical Sciences40 Engineering4018 Nanotechnology
• Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications
  Abstract Nickel oxide (NiO x ), a p‐type oxide semiconductor, has gained significant attention due to its versatile and tunable properties. It has become one of the critical materials in wide range of electronics applications, including resistive switching ran…
  datacite Napari, Mari, Huq, Tahmida N, Hoye, Robert LZ, MacManus‐Driscoll, Judith L 2021 置信度 0.66 40 Engineering4016 Materials Engineering
• High-Speed Photography and Digital Optical Measurement Techniques for Geomaterials: Fundamentals and Applications
  Geomaterials (i.e. rock, sand, soil and concrete) are increasingly being encountered and used in extreme environments, in terms of the pressure magnitude and the loading rate. Advancing the understanding of the mechanical response of materials to impact loadin…
  datacite Xing, HZ, Zhang, QB, Braithwaite, CH, Pan, B 等 2017 置信度 0.66 4005 Civil Engineering40 Engineering
• Emerging light-emitting diodes for next-generation data communications
  The continuing development of consumer electronics, mobile communications and advanced computing technologies has led to a rapid growth in data traffic, creating challenges for the communications industry. Light-emitting diode (LED)-based communication links a…
  datacite Ren, Aobo, Wang, Hao, Zhang, Wei, Wu, Jiang 等 2021 置信度 0.66 40 Engineering4016 Materials Engineering4009 Electronics, Sensors and Digital Hardware
• The Enduring Legacy of Scanning Spreading Resistance Microscopy: Overview, Advancements, and Future Directions
  Scanning spreading resistance microscopy (SSRM) has recently celebrated thirty years of existence when counting from the original patent of 1994. In this time the technique has experienced an incredible journey with substantial evolutions that transformed SSRM…
  datacite Celano, Umberto, Hantschel, Thomas, Pondini, Andrea, Lagrain, Pieter 等 2025 置信度 0.66 Engineering
• The Enduring Legacy of Scanning Spreading Resistance Microscopy: Overview, Advancements, and Future Directions
  Scanning spreading resistance microscopy (SSRM) has recently celebrated thirty years of existence when counting from the original patent of 1994. In this time the technique has experienced an incredible journey with substantial evolutions that transformed SSRM…
  datacite Celano, Umberto, Hantschel, Thomas, Pondini, Andrea, Lagrain, Pieter 等 2025 置信度 0.66 Engineering
• Predicting the structure and performance of dye-sensitized solar cells by computational methods.
  Dye-sensitized solar cells (DSCs) are a photovoltaic technology based around light-harvesting dye molecules bound to thin semiconductor films of high surface area. Many of the highest-performing DSCs to date incorporate multiple dyes that harvest light from di…
  datacite Devereux, Leon 2023 置信度 0.66 Computational PhysicsData-driven ScreeningDensity Functional TheoryEnergy MaterialsPhotovoltaics
• THE STRUCTURAL AND OPTICAL PROPERT IES STUDY OF TRANSITION METAL DOPED TiO2 NANOPARTICLES
  Advisor: Senbeto Kena (PhD) ABSTRACT Titanium dioxide is a photosensitive metal oxide n -type semiconductor having an energy band gap of 3.2 eV in anatase form. The purpose of this work is to review the structural and optical properties of a transition metal l…
  datacite Tamasgen Gobana Duguma 2021 置信度 0.66
• THE STRUCTURAL AND OPTICAL PROPERT IES STUDY OF TRANSITION METAL DOPED TiO2 NANOPARTICLES
  Advisor: Senbeto Kena (PhD) ABSTRACT Titanium dioxide is a photosensitive metal oxide n -type semiconductor having an energy band gap of 3.2 eV in anatase form. The purpose of this work is to review the structural and optical properties of a transition metal l…
  datacite Tamasgen Gobana Duguma 2021 置信度 0.66
• "Wafer Inspection Review"
  "The semiconductor manufacturing industry demands increasingly sophisticated quality control mechanisms as device miniaturization approaches atomic scales. Wafer defect detection, a critical component of semiconductor fabrication, has undergone significant tra…
  datacite BALACHANDAR JEGANATHAN 2025 置信度 0.66
• Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
  Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physica…
  datacite Tho, Che Chen, Yang, Zongmeng, Fang, Shibo, Guo, Shiying 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• Bismuth doping induced enhancement of the spin-orbit coupling strength in the prototype dilute ferromagnetic semiconductor (Ga,Mn)As: a review
  Extensive studies on the impact of bismuth incorporation into the (Ga,Mn)As prototype dilute ferromagnetic semiconductor (DFS) on its structural, magnetic and magnetotransport properties are summarized in this review. Thin epitaxial layers of the quaternary (G…
  datacite Wosinski, Tadeusz 2024 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• Recent Developments in Semiconductor Wafer Fabrication: Materials, Processes, and Innovations
  The semiconductor industry plays a critical role in modern electronics, with semiconductor wafer fabrication being a fundamental process in integrated circuit (IC) production. This review explores the key materials, fabrication processes, and recent advancemen…
  datacite Journal of Global Research in Electronics and Communications 2025 置信度 0.66 Semiconductor wafer fabrication, integrated circuits, lithography, silicon wafers, gallium arsenide, extreme ultraviolet (EUV) lithography, deep ultraviolet (DUV) lithography, artificial intelligence, automation, sustainable manufacturing
• Recent Developments in Semiconductor Wafer Fabrication: Materials, Processes, and Innovations
  The semiconductor industry plays a critical role in modern electronics, with semiconductor wafer fabrication being a fundamental process in integrated circuit (IC) production. This review explores the key materials, fabrication processes, and recent advancemen…
  datacite Journal of Global Research in Electronics and Communications 2025 置信度 0.66 Semiconductor wafer fabrication, integrated circuits, lithography, silicon wafers, gallium arsenide, extreme ultraviolet (EUV) lithography, deep ultraviolet (DUV) lithography, artificial intelligence, automation, sustainable manufacturing
• Flip-Chip-Based Microwave Spectroscopy of Andreev Bound States in a Planar Josephson Junction
  We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states (ABSs) in a gate-tunable planar Josephson junction (JJ) using inductively coupled superconducting low-loss resonators. By means of electrostatic gating, we present cont…
  datacite Hinderling, M., Sabonis, Deividas, Paredes, Stephan, Haxell, Daniel Z. 等 2023 置信度 0.66
• Measurement-induced population switching
  Quantum information processing is a key technology in the ongoing second quantum revolution, with a wide variety of hardware platforms competing toward its realization. An indispensable component of such hardware is a measurement device, i.e., a quantum detect…
  datacite Ferguson, Michael S., Camenzind, Leon C., Müller, Clemens, Biesinger, Daniel E.F. 等 2023 置信度 0.66
• In situ Tuning of the Electric-Dipole Strength of a Double-Dot Charge Qubit: Charge-Noise Protection and Ultrastrong Coupling
  Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology. Here, we investigate double-quantum-dot (DQD) charge qubits in…
  datacite Scarlino, Pasquale, Ungerer, Jann H., van Woerkom, David J., Mancini, Marco 等 2022 置信度 0.66 Quantum information architectures & platformsQuantum information processingQuantum information with hybrid systemsQuantum information with solid state qubits
• Impact of band-bending on the k-resolved electronic structure of Si-doped GaN
  Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes the materia…
  datacite Lev, Leonid, Maiboroda, I.O., Grichuk, Evgeny S., Chumakov, Nikolay K. 等 2022 置信度 0.66 Density of statesElectronic structureFermi surfaceHall effectDoped semiconductor
• Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors
  Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the ex…
  datacite Lu, Ping-Keng, Fernandez Olvera, Anuar de Jesus, Turan, Deniz, Seifert, Tom Sebastian 等 2025 置信度 0.66
• Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
  The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a device concept for energy-efficient…
  datacite Logoteta, D., Cao, J., Pala, M., Dollfus, P. 等 2020 置信度 0.66
• ADVANCED WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR HIGH-POWER APPLICATIONS: GAN, SIC, AND DIAMOND-BASED ELECTRONICS FOR EXTREME ENVIRONMENTS
  Wide-bandgap (WBG) semiconductor devices have revolutionized the field of high-power electronics by offeringsuperior efficiency, thermal stability, and operational reliability in extreme environments. As traditional siliconbased devices struggle with limitatio…
  datacite Michael Ibukun Kolawole 2025 置信度 0.66 semiconductorsWide-bandgap semiconductorsGallium nitride (GaN
• ADVANCED WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR HIGH-POWER APPLICATIONS: GAN, SIC, AND DIAMOND-BASED ELECTRONICS FOR EXTREME ENVIRONMENTS
  Wide-bandgap (WBG) semiconductor devices have revolutionized the field of high-power electronics by offeringsuperior efficiency, thermal stability, and operational reliability in extreme environments. As traditional siliconbased devices struggle with limitatio…
  datacite Michael Ibukun Kolawole 2025 置信度 0.66 semiconductorsWide-bandgap semiconductorsGallium nitride (GaN
• The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
  The advancement of semiconductor materials has played a crucial role in the development of electronic and optical devices. However, scaling down semiconductor devices to the nanoscale has imposed limitations on device properties due to quantum effects. Hence, …
  datacite Bi, Jiachang, Zhang, Ruyi, Yao, Xiong, Cao, Yanwei 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Superconductivity (cond-mat.supr-con)FOS: Physical sciencesFOS: Physical sciences
• Design and Application of SiC Power MOSFET
  This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) de…
  datacite Linewih, Handoko 2003 置信度 0.66 MOSFETsPower MOSFETsSiC4H-SiCACCUFET
• Slow Traps in MOS Structures: a Study of High Field and Plasma Induced Trapping in the Si-SiO2 Interface Region
  As each successive generation of MOS devices is scaled down to meet the requirements for increased speed and integration, the demands placed on dielectric layers and semiconductor-dielectric interfaces become more severe. Improved process cleanliness and novel…
  datacite Tanner, Philip 1996 置信度 0.66 Slow trapsMOSSlow Trap ProfilingMetal oxide semiconductorsSilicon oxide
• Flexoelectric Transduction in Hafnium-based NEMS
  Flexoelectricity, the coupling between electric polarization and strain gradient, is a universal phenomenon in dielectric materials. When a material bends, electric charges are generated, and inversely, applying an electric voltage induces bending. This bidire…
  datacite Moreno Garcia, Daniel 2025 置信度 0.66 NEMSFlexoelectricityDielectric materialsHafnium OxidePiezoelectricity
• Lingering Times at Resonance: The Case of Sb-based Tunneling Devices
  Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry n…
  datacite Castro, Edgar David Guarin, Pfenning, Andreas, Hartmann, Fabian, Naranjo, Andrea 等 2023 置信度 0.66 Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Materials Science (cond-mat.mtrl-sci)Quantum Physics (quant-ph)FOS: Physical sciencesFOS: Physical sciences
• Towards machine learning-assisted electronic design automation: microwave filter, power amplifier, and semiconductor device
  Over the decades of development, electronic design automation (EDA) has been widely applied in most electronic design problems, especially in advanced and sophisticated digital systems. In contrast, the degree of automation for distributed-element circuits, e.…
  datacite Xue, Liyuan 2024 置信度 0.66
• A Review Of Strategies For Mitigating Lot-To-Lot, Wafer-To-Wafer, And Within-Wafer Variations In Semiconductor Production
  Semiconductor manufacturing faces significant challenges in managing variability at multiple levels including lot-to-lot, wafer-to-wafer, and within-wafer variations. These variations can significantly affect the product quality, yield, and overall manufacturi…
  datacite Tarun Parmar 2020 置信度 0.66
• A Review Of Strategies For Mitigating Lot-To-Lot, Wafer-To-Wafer, And Within-Wafer Variations In Semiconductor Production
  Semiconductor manufacturing faces significant challenges in managing variability at multiple levels including lot-to-lot, wafer-to-wafer, and within-wafer variations. These variations can significantly affect the product quality, yield, and overall manufacturi…
  datacite Tarun Parmar 2020 置信度 0.66
• A Review Of Strategies For Mitigating Lot-To-Lot, Wafer-To-Wafer, And Within-Wafer Variations In Semiconductor Production
  Semiconductor manufacturing faces significant challenges in managing variability at multiple levels including lot-to-lot, wafer-to-wafer, and within-wafer variations. These variations can significantly affect the product quality, yield, and overall manufacturi…
  datacite Tarun Parmar 2020 置信度 0.66
• Gate control of superconducting current: Mechanisms, parameters and technological potential
  In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting curre…
  datacite Ruf, Leon, Puglia, Claudio, Elalaily, Tosson, De Simoni, Giorgio 等 2023 置信度 0.66 Superconductivity (cond-mat.supr-con)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Emerging Trends in Semiconductor Technology: From Silicon to Beyond
  As the feature sizes in the current CMOS technology are heading towards scaling limits, the global focus has been shifted towards discovering the new dimensions in semiconductor technology, i.e., the frontiers beyond silicon, where significant technological ad…
  datacite Dr. B. Raghavaiah, Dr. J. Prasanth Kumar, Dr. K. Raju, Dr M. L.S. N. S. Lakshmi 等 2024 置信度 0.66
• Emerging Trends in Semiconductor Technology: From Silicon to Beyond
  As the feature sizes in the current CMOS technology are heading towards scaling limits, the global focus has been shifted towards discovering the new dimensions in semiconductor technology, i.e., the frontiers beyond silicon, where significant technological ad…
  datacite Dr. B. Raghavaiah, Dr. J. Prasanth Kumar, Dr. K. Raju, Dr M. L.S. N. S. Lakshmi 等 2024 置信度 0.66
• Perovskite Polycrystalline Direct Radiation Detectors
  This thesis discusses the interaction of radiation with matter and the characterisation of advancedradiation detectors, focusing on the use of perovskite materials, specifically FAPbBr3 polycrystalline,in the field of X-ray detection. The research begins with …
  datacite Alghamdi, Suad Saeed M 2024 置信度 0.66 radiation senstivityperovksitecrystal growithradiation detectorsSemiconductors
• <strong><strong><strong>Gate control of superconducting current: M</strong><strong>echanisms, parameters, and technological potential.</strong></strong></strong>
  In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage ( V G ). The superconducting equivalent of such effect had remained unknown until it was recently shown that a V G can tune the superconducting c…
  datacite De Simoni, Giorgio, Puglia, Claudio, Joint, Francois, Ruf, Leon 等 2024 置信度 0.66 Physical sciencesFOS: Physical sciences
• Electronic Devices Energy-Saving Trend for Research and Development
  Along with cost, speed, bandwidth, and dependability, energy efficiency is a performance metric of competitiveness in the electronic industry. Research and development (R&D) in mechatronic systems, which make use of electronic systems and components, is impact…
  datacite Singh, Sushil Kumar, Singh, Jai Kishan 2024 置信度 0.66
• Electronic Devices Energy-Saving Trend for Research and Development
  Along with cost, speed, bandwidth, and dependability, energy efficiency is a performance metric of competitiveness in the electronic industry. Research and development (R&D) in mechatronic systems, which make use of electronic systems and components, is impact…
  datacite Singh, Sushil Kumar, Singh, Jai Kishan 2024 置信度 0.66
• Harnessing the Duality of Magnetism and Conductivity: A Review of Oxide based Dilute Magnetic Semiconductors
  Over the last two decades, the new branch of spintronics, i.e., semiconductor spintronics, has gained more attention because it integrates the characteristics of conventional semiconductors, such as optical bandgap and charge carriers, helpful for processing a…
  datacite Bhardwaj, Pankaj, Singh, Jarnail, Verma, Vikram, Kumar, Ravi 2024 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• VP6-04: Title: Magnetic Tunnel Junction Molecular Spintronics-based chemical sensing device
  Magnetic Sensors and High Frequency Devices (Virtual)
  datacite Pius Suh, Pawan Tyagi 2023 置信度 0.66
• VP15-05: Thickness dependent structural, morphological and magnetic properties of PLD grown CoFe thin film
  Spin Orbitronics (Virtual)
  datacite Prashant Kumar, Ravi Kumar, Vipul Sharma, Manoj Kumar Khanna and Bijoy Kumar Kuanr 2023 置信度 0.66
• Millimeter Wave Power Amplifiers in Silicon State of the Art and Future Technology Trend Slides
  SSCS Webinar Slides
  datacite Hua Wang 2020 置信度 0.66
• Millimeter Wave Power Amplifiers in Silicon State of the Art and Future Technology Trend Video
  SSCS Webinar Video
  datacite Hua Wang 2020 置信度 0.66
• Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review
  Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These limitations include i…
  datacite Tsang, Chloe Isabella, Pu, Haihui, Chen, Junhong 2024 置信度 0.66 Applied Physics (physics.app-ph)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Dataset for "Resonance-Induced Anomalies in Temperature-Dependent Raman Scattering of PdSe2"
  The dataset contains the inputs necessary to reproduce the theoretical calculations presented in the associated paper, the abstract of which is as follows: We report a comprehensive Raman study of the phonon behaviour in bulk and trilayer PdSe2 in the temperat…
  datacite Wolverson, Daniel 2024 置信度 0.66 Materials Characterisation
• Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates
  Abstract In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) d…
  datacite Md. Soyaeb Hasan, Asif Abdullah Khan, S. Shahzadi, Mojtaba Bagheri 等 2024 置信度 0.66 Terahertz Technology and ApplicationsElectrical and Electronic EngineeringFOS: Electrical engineering, electronic engineering, information engineeringEngineeringPhysical Sciences
• Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates
  Abstract In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) d…
  datacite Md. Soyaeb Hasan, Asif Abdullah Khan, S. Shahzadi, Mojtaba Bagheri 等 2024 置信度 0.66 Terahertz Technology and ApplicationsElectrical and Electronic EngineeringFOS: Electrical engineering, electronic engineering, information engineeringEngineeringPhysical Sciences
• Quantum Advancements in Neutron Scattering Reshape Spintronic Devices
  Topological magnetism has sparked an unprecedented age in quantum technologies. Marked by twisted spin structures with exotic dynamical modes, topological magnets have motivated a new generation of spintronic devices which transcend the limits of conventional …
  datacite Henderson, M. E., Cory, D. G., Sarenac, D., Pushin, D. A. 2024 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Other Condensed Matter (cond-mat.other)Quantum Physics (quant-ph)FOS: Physical sciencesFOS: Physical sciences
• Non-equilibrium Green function method: theory and application in simulation of nanometer electronic devices
  We review fundamental aspects of the non-equilibrium Green function method in the simulation of nanometer electronic devices. The method is implemented into our recently developed computer package OPEDEVS to investigate transport properties of electrons in nan…
  datacite Van-Nam Do 2014 置信度 0.66 Semiconductor Spintronics and Quantum ComputingAtomic and Molecular Physics, and OpticsPhysics and AstronomyPhysical SciencesNanoelectronics and Transistors
• Non-equilibrium Green function method: theory and application in simulation of nanometer electronic devices
  We review fundamental aspects of the non-equilibrium Green function method in the simulation of nanometer electronic devices. The method is implemented into our recently developed computer package OPEDEVS to investigate transport properties of electrons in nan…
  datacite Van-Nam Do 2014 置信度 0.66 Semiconductor Spintronics and Quantum ComputingAtomic and Molecular Physics, and OpticsPhysics and AstronomyPhysical SciencesNanoelectronics and Transistors
• Physics and Device Engineering of Wide Bandgap Semiconductor-Based Light Emitting Diodes: A Comprehensive Review
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• Faculty Opinions recommendation of Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device.
  crossref Lloyd Smith 2022-11-16T11:30:09Z 置信度 0.70
• A Comparative Review of Junction Temperature Monitoring for SiC-Based Power Semiconductor Devices
  crossref Guangjie Zhu, Xiangshun Li, Song Xiong, Cheng Wang 2026-05-04T19:37:45Z 置信度 0.70
• Faculty Opinions recommendation of Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device.
  crossref Fuchou Tang 2022-10-24T12:50:05Z 置信度 0.70
• Future Prospect for Semiconductor and Electron Device Manufacturing and Laser Fine Materials Processing
  crossref Kunihiko Washio 2011-12-16T04:44:32Z 置信度 0.70
• Review paper: imaging lidar by digital micromirror device
  crossref Yuzuru Takashima, Brandon Hellman 2020-09-25T05:02:22Z 置信度 0.70
• Prolog to: A review of hydrodynamic and energy-transport models for semiconductor device simulation
  crossref J. Esch 2003-05-02T18:30:27Z 置信度 0.70
• Faculty Opinions recommendation of An integrated semiconductor device enabling non-optical genome sequencing.
  crossref Reinhard Sterner, Rainer Merkl 2012-08-20T14:26:22Z 置信度 0.70
• Faculty Opinions recommendation of An integrated semiconductor device enabling non-optical genome sequencing.
  crossref Bino John, Zhihua Li 2012-08-20T14:50:54Z 置信度 0.70
• Crystal structure of AlGaInP for visible semiconductor lasers and device characteristics.
  crossref Isao HINO 2011-12-16T04:39:53Z 置信度 0.70
• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
  crossref 2007-10-04T19:35:53Z 置信度 0.70
• IEEE Components, Packaging, and Manufacturing Technology Society Information
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• IEEE Components, Packaging, and Manufacturing Technology Society Information
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• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
  crossref 2007-11-07T19:19:13Z 置信度 0.70
• Challenges of advanced wafer level packaging technology: Cost-effectiveness, integration and scalability
  crossref Seung Wook Yoon 2013-05-03T16:41:36Z 置信度 0.70
• Conclusion
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• IEEE Transactions on Advanced Packaging
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• DNA PACKAGING IN NON-VIRAL SYSTEMS
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• InFO_oS (Integrated Fan-Out on Substrate) Technology for Advanced Chiplet Integration
  crossref Y. P. Chiang, S. P. Tai, W.C. Wu, John Yeh 等 2021-08-10T16:54:27Z 置信度 0.70
• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
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• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
  crossref 2007-10-04T19:35:52Z 置信度 0.70
• Packaging Technologies for Advanced Automotive Applications
  ABSTRACT Starting with analog integrated circuits (IC’s) for in-car radios and then electronically controlled fuel injection (EFI), semiconductors were first implemented in automotive electronics starting the late 1960’s [1-4]. During the 1970’s there was a ra…
  crossref 2025-12-01T20:01:16Z 置信度 0.70
• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
  crossref 2008-05-05T20:36:46Z 置信度 0.70
• 2013 IEEE Electrical Design of Advanced Packaging Systems Symposium (EDAPS)
  crossref 2020-02-05T00:57:27Z 置信度 0.70
• SiO₂-Based Chiplet Reconstitution Technology for Multi-Height Chiplet Integration
  crossref Ashita Victor, Madison Manley, Muhannad S. Bakir 2025-06-26T17:40:11Z 置信度 0.70
• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
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• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
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• Materials for Thermal Management in Advanced Memory Packaging
  crossref Chong Leong Gan, Chen Yu Huang 2025-07-21T02:29:50Z 置信度 0.70
• Environmental assessment of food packaging and advanced methods for choosing the correct materials
  crossref K Verghese 2010-02-24T08:50:06Z 置信度 0.70
• IEEE Components, Packaging, and Manufacturing Technology Society Information for authors
  crossref 2010-05-12T16:11:03Z 置信度 0.70
• ShieldLink: Retry‑Aware Authenticated Encryption for Secure and Reliable Chiplet Interconnects
  Chiplet-based systems-in-package increasingly rely on die-to-die (D2D) links such as UCIe/CXL, where link-layer ARQ typically ensures reliability. At the same time, confidentiality and integrity are protected by higher-layer authenticated encryption (AEAD). Wh…
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