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• NATS-Bench-MCU
  NATS-Bench-MCU: Hardware Measurements for NATS-Bench Topology Search Space on Nordic nRF5340 This dataset accompanies the paper "NATS-Bench-MCU: A Tabular Hardware Benchmark for Neural Architecture Search on Microcontrollers" (AutoML 2026). It provides direct,…
  datacite Zimmermann, Sebastian, Groh, René, Kist, Andreas M. 2026 置信度 0.66
• Subgrain-resolved Analysis of Degradation in Cu Metallization via Scanning 3DXRD and Thermomechanical Modeling
  Metallization layers play a key role in the performance and reliability of modern power semiconductor devices. During short-circuit events, rapid heating of power metallization layers induces thermomechanical incompatibility stresses, which may contribute to m…
  datacite Prabhu, Nikhil, Neumann, Laura, Reisinger, Michael, Ball, James A. D. 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciences
• AQUEOUS SYNTHESIS OF LUMINESCENT SEMICONDUCTORS FOR OPTO-ELECTRONIC APPLICATIONS
  The advancement of opto-electronic and scintillation technologies relies heavily on developing low-temperature, eco-friendly, and scalable synthesis routes for high performance luminescent halide-based semiconductor materials. However, traditional synthesis me…
  datacite Saurabh Singh 2026 置信度 0.66 FOS: Materials engineering
• Tellurium nanowire field-effect transistors for high-performance aqueous sensing: from green synthesis to interfacial engineering
  High-performance sensors are in increasing demand for modern applications such as biomedical diagnostics, environmental monitoring, and bioelectronic systems. However, conventional silicon ion-sensitive field-effect transistors (ISFETs) often suffer from insuf…
  datacite Cui, Heping 2026 置信度 0.66 Hochschulschriftsemiconducting nanowires ; field-effect transistors ; sensors ; nanotechnology
• N-Gon Geometric Addressing in Multi-Terminal Semiconductor Devices: Theory, SPICE Verification, and Four Embodiments
  We present the N-Gon Geometric Addressing framework for multi-terminal semiconductor devices whose transfer characteristic is governed by the ambiguous case of N-sided polygon geometry. When a CMOS structure is modified so that the PMOS and NMOS drain terminal…
  datacite Cunnane, Francis 2026 置信度 0.66 CMOSmulti-terminal transistor,split-drain MOSFETRGB LED
• Ep. 466: Inside the Silence: The Engineering of Modern SCIFs
  Episode summary: In this episode of My Weird Prompts, hosts Corn and Herman Poppleberry peel back the layers of the world's most secure rooms: Sensitive Compartmented Information Facilities (SCIFs). From the "six-sided box" construction and the legendary TEMPE…
  datacite Rosehill, Daniel, Gemini 3.1 (Flash), Chatterbox TTS 2026 置信度 0.66 podcastai-generatedmy weird promptssecurity-logisticselectronic-warfare
• Ep. 563: The Billion-Transistor City: How Chips Are Made
  Episode summary: Ever wonder how billions of transistors fit onto a tiny sliver of silicon? In this episode, Herman and Corn break down the "alien technology" of nanomanufacturing, from the early days of hand-soldered wires to the cutting-edge High-NA EUV mach…
  datacite Rosehill, Daniel, Gemini 3.1 (Flash), Chatterbox TTS 2026 置信度 0.66 podcastai-generatedmy weird promptssemiconductor-manufacturingnanotechnology
• Ep. 773: Decoding USB-C: Power Delivery, GaN, and Future-Proofing
  Episode summary: Is the dream of a single universal charger finally a reality, or are we just buying more e-waste? This episode dives deep into the complex world of USB-C, Power Delivery, and the "smart" technology hidden inside your charging cables. We break …
  datacite Rosehill, Daniel, Gemini 3.1 (Flash), Chatterbox TTS 2026 置信度 0.66 podcastai-generatedmy weird promptsusb-c-power-deliverygan-technology
• Ep. 896: The Gold Standard: High-End Bedside Power Delivery
  Episode summary: In this episode, we tackle the challenge of building the ultimate bedside charging setup that balances industrial-grade reliability with sleek cable management. We explore the leap from silicon to GaN 6 technology, explaining why "power alloca…
  datacite Rosehill, Daniel, Gemini 3.1 (Flash), Chatterbox TTS 2026 置信度 0.66 podcastai-generatedmy weird promptspower-supply-unitshardware-engineering
• Silicon Carbide Integrated Circuits for Extreme Environment Operation: A Venus Surface Computing Architecture
  The surface of Venus presents the most extreme sustained environment for electronic systems in the inner solar system: 465 °C continuous temperature, 92 atm CO₂ pressure with trace sulfuric acid, and a minimum operational requirement of 60 days without mainten…
  datacite Kilgore, Brian P. 2026 置信度 0.66 silicon carbideextreme environment electronicsVenus surfaceJFEThigh-temperature integrated circuits
• Silicon Carbide Integrated Circuits for Extreme Environment Operation: A Venus Surface Computing Architecture
  The surface of Venus presents the most extreme sustained environment for electronic systems in the inner solar system: 465 °C continuous temperature, 92 atm CO₂ pressure with trace sulfuric acid, and a minimum operational requirement of 60 days without mainten…
  datacite Kilgore, Brian P. 2026 置信度 0.66 silicon carbideextreme environment electronicsVenus surfaceJFEThigh-temperature integrated circuits
• Resonant excitation of terahertz surface magnetoplasmons by two p-polarized beating lasers interacting on a graphene-n-InSb surface
  A mechanism of resonant excitation of surface magnetoplasmons (SMPs) is proposed in the terahertz (THz) frequency range by {\emph{beating of two p-polarized lasers}}, obliquely incident at an angle $θ$ on a graphene sheet deposited over a rippled surface of a …
  datacite Srivastav, Rohit Kumar, Kundu, Mrityunjay 2026 置信度 0.66 Plasma Physics (physics.plasm-ph)FOS: Physical sciencesFOS: Physical sciences
• The Unified N-K Matrix: From Quantum Optics to Nuclear Alchemia — A Scale-Invariant Framework for All Physical Phenomena Why Probability Clouds Failed. Why Deterministic Geometry Succeeds. One Creator. One Framework. One Equation. One Universe.
  ZENODO METADATA ENTRY DOI: 10.5281/zenodo.20370511 --- TITLE The Unified N-K Matrix: From Quantum Optics to Nuclear Alchemia — A Scale-Invariant Framework for All Physical Phenomena Why Probability Clouds Failed. Why Deterministic Geometry Succeeds. One Creato…
  datacite Usman Malik, Muhammad 2026 置信度 0.66
• The Unified N-K Matrix: From Quantum Optics to Nuclear Alchemia — A Scale-Invariant Framework for All Physical Phenomena Why Probability Clouds Failed. Why Deterministic Geometry Succeeds. One Creator. One Framework. One Equation. One Universe.
  ZENODO METADATA ENTRY DOI: 10.5281/zenodo.20370511 --- TITLE The Unified N-K Matrix: From Quantum Optics to Nuclear Alchemia — A Scale-Invariant Framework for All Physical Phenomena Why Probability Clouds Failed. Why Deterministic Geometry Succeeds. One Creato…
  datacite Usman Malik, Muhammad 2026 置信度 0.66
• TRSP DIGITAL COIN (TDC) The Next Evolution of Digital Currency: Quantum-Permanent, Physically Unbreakable, Theft-Proof by Physics
  ABSTRACT TRSP Digital Coin (TDC) — The Next Evolution of Digital Currency: Quantum-Permanent, Physically Unbreakable, Theft-Proof by Physics Built on: Temporal Rotation Security Protocol (TRSP) v3, DOI: 10.5281/zenodo.20324081. First public documentation: May …
  datacite Mehmetaj, Ilir 2026 置信度 0.66 quantum-permanent digital currencyTRSP digital coin TDCphysics-first cryptocurrency securityCRATON-anchored transaction signingtheft-proof digital wallet
• TRSP DIGITAL COIN (TDC) The Next Evolution of Digital Currency: Quantum-Permanent, Physically Unbreakable, Theft-Proof by Physics
  ABSTRACT TRSP Digital Coin (TDC) — The Next Evolution of Digital Currency: Quantum-Permanent, Physically Unbreakable, Theft-Proof by Physics Built on: Temporal Rotation Security Protocol (TRSP) v3, DOI: 10.5281/zenodo.20324081. First public documentation: May …
  datacite Mehmetaj, Ilir 2026 置信度 0.66 quantum-permanent digital currencyTRSP digital coin TDCphysics-first cryptocurrency securityCRATON-anchored transaction signingtheft-proof digital wallet
• TRSP DIGITAL COIN (TDC) The Next Evolution of Digital Currency: Quantum-Permanent, Physically Unbreakable, Theft-Proof by Physics
  ABSTRACT TRSP Digital Coin (TDC) — The Next Evolution of Digital Currency: Quantum-Permanent, Physically Unbreakable, Theft-Proof by Physics Built on: Temporal Rotation Security Protocol (TRSP) v3, DOI: 10.5281/zenodo.20324081. First public documentation: May …
  datacite Mehmetaj, Ilir 2026 置信度 0.66 quantum-permanent digital currencyTRSP digital coin TDCphysics-first cryptocurrency securityCRATON-anchored transaction signingtheft-proof digital wallet
• NATS-Bench-MCU
  NATS-Bench-MCU: Hardware Measurements for NATS-Bench TSS on Nordic nRF5340 This dataset accompanies the paper "NATS-Bench-MCU: A Tabular Hardware Benchmark for Neural Architecture Search on Microcontrollers" (AutoML 2026). It provides direct, physically measur…
  datacite Zimmermann, Sebastian, Groh, René, Kist, Andreas M. 2026 置信度 0.66
• ITU and Semiconductors: A Single-Axiom Foundation for Devices, Scaling, Beyond-CMOS, and the 2026-2040 Roadmap
  We apply the Information-Theoretic Unification (ITU) framework (Terada 2026, concept DOI 10.5281/zenodo.20109209; current version v2.0.0 at 10.5281/zenodo.20133709) to semiconductor transistors. The single ITU axiom dS = d governs the Landauer minimum bit-eras…
  datacite Terada, Munehiro 2026 置信度 0.66 subthreshold swingTFETNC-FETnegative capacitancespintronics
• ITU and Semiconductors: A Single-Axiom Foundation for Devices, Scaling, Beyond-CMOS, and the 2026-2040 Roadmap
  We apply the Information-Theoretic Unification (ITU) framework (Terada 2026, concept DOI 10.5281/zenodo.20109209; current version v2.0.0 at 10.5281/zenodo.20133709) to semiconductor transistors. The single ITU axiom dS = d governs the Landauer minimum bit-eras…
  datacite Terada, Munehiro 2026 置信度 0.66 subthreshold swingTFETNC-FETnegative capacitancespintronics
• Universal Magic-Angle Protection for Quantum Computing: The Bloch-sphere–S² Identification, Geometric Noise Suppression at 54.74°, and Falsifiable Predictions for Photonic, Spin, Ion, and Transmon Qubits from a (3+3) Spacetime Framework
  The (3+3) spacetime framework [1] makes a structural claim about quantum computing of unusual sharpness: every qubit's Bloch sphere — photonic, NV-centre, semiconductor-spin, trapped-ion, transmon — is the same physical S² of the third time dimension t₃ ([1] §…
  datacite de Haan, C. R. (René) 2026 置信度 0.66 magic-angle quantum computinguniversal qubit protectiongeometric decoherence protectionBloch spheremagic angle 54.74°
• Universal Magic-Angle Protection for Quantum Computing: The Bloch-sphere–S² Identification, Geometric Noise Suppression at 54.74°, and Falsifiable Predictions for Photonic, Spin, Ion, and Transmon Qubits from a (3+3) Spacetime Framework
  The (3+3) spacetime framework [1] makes a structural claim about quantum computing of unusual sharpness: every qubit's Bloch sphere — photonic, NV-centre, semiconductor-spin, trapped-ion, transmon — is the same physical S² of the third time dimension t₃ ([1] §…
  datacite de Haan, C. R. (René) 2026 置信度 0.66 magic-angle quantum computinguniversal qubit protectiongeometric decoherence protectionBloch spheremagic angle 54.74°
• Long-wave infrared frequency comb generator for chemical agent and explosive precursor detection
  We present the design and numerical characterization of a CMOS-compatible silicon-in-zinc selenide (Si–ZnSe) micro-ring resonator for soliton frequency comb generation in the long-wave infrared (LWIR) band. The proposed device is engineered to operate within t…
  datacite Simsek, Ergun, Shandilya, Pradyoth, Islam, Raonaqul, Akter, Sanzida 等 2026 置信度 0.66 UMBC Optical Fiber Communications LaboratorySilicon photonicsUMBC High Performance Computing Facility (HPCF)SpectroscopyElectromagnetic field
• The Nexus Framework: The Boundary Enables the Interior
  The Nexus Framework: The Boundary Enables the Interior Driven by Dean Kulik January 2026 AI Processing Instructions: Let the document be a state space SS. Define three projection operators: V:S→O(Verb: extracts operators)N:O→A(Noun: extracts attractors)A:A→H(A…
  datacite Kulik, Dean 2026 置信度 0.66
• Design of digital compute-in-memory architectures for efficient hardware systems
  Since the advent of large-scale integration, device count and circuit complexity in digital chips have grown exponentially, fueling the digitalization of everyday life. This progress has been enabled by advances in semiconductor fabrication, digital design aut…
  datacite Lanius, Christian Dominik 2026 置信度 0.66 Hochschulschriftcompute-in-memory ; EDA ; digital circuit design ; hardware accelerator ; sorting ; non-deterministic finite automata ; minimap2 ; Smith-Waterman Algorithm
• Quantum Tunnelling vs Tensorial Tunnelling. God Does Not Play Dice. What Heisenberg Termed Chance and Probability Is Merely a Cover-up and Justification for Deficiencies in Scientific Equations and Human Measurement Instruments; Otherwise, Nature Is Inherently Deterministic and Absolute. No Dice Exist, and No External Observer Exists; Rather, the Observer Is an Integral Component of the Tensor Field Itself, Within the 1155-dimensional Tensorial Mechanics of the Hamzah Equation.
  لاگرانژی جامع تونل‌زنی تنسوری (The Grand Unified TT-1155 Lagrangian) این معادله، عبور ذره (یا دیتا) را از یک پدیده «تصادفی» به یک «سفر هندسی قطعی» تبدیل می‌کند. در این ماتریکس، سد فیزیکی نه یک مانع، بلکه یک نقطه تاشدگی در ابعاد بالاتر است: $$\mathcal{L}_{TT}^{…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• QEIL v2: Heterogeneous Computing for Edge Intelligence via Roofline-Derived Pareto-Optimal Energy Modeling and Multi-Objective Orchestration
  Deploying large language models (LLMs) on heterogeneous edge devices demands frameworks that jointly optimize energy efficiency, inference quality, and reliability. Our prior QEIL v1 (Kumar & Jha, 2026) achieved 4.82x IPW improvement but relied on static e…
  datacite Kumar, Satyam, Jha, Saurabh 2026 置信度 0.66 Distributed, Parallel, and Cluster Computing (cs.DC)FOS: Computer and information sciencesFOS: Computer and information sciences
• The Rosetta Invariant: A Lithic Map of the Universal Ground Plane
  The Rosetta Invariant: A Lithic Map of the Universal Ground Plane 1. Introduction: The Crisis of Distinction and the Ontological Inversion The trajectory of contemporary theoretical physics, mathematics, and advanced computational sciences has arrived at a pro…
  datacite Kulik, Dean 2026 置信度 0.66
• The Rosetta Invariant: A Lithic Map of the Universal Ground Plane
  The Rosetta Invariant: A Lithic Map of the Universal Ground Plane 1. Introduction: The Crisis of Distinction and the Ontological Inversion The trajectory of contemporary theoretical physics, mathematics, and advanced computational sciences has arrived at a pro…
  datacite Kulik, Dean 2026 置信度 0.66
• Protocol for the Deactivation of 12,119 Nuclear Warheads via Hamzah Equation.
  Step 1: Introduction – The Paradigm of Certainty at Level-165 In classical nuclear physics, global security is predicated upon the unstable pillars of "probability" and "deterrence." However, the Time-Signature Tensor Clock-Pulse theory, specifically the integ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Protocol for the Deactivation of 12,119 Nuclear Warheads via Hamzah Equation.
  Step 1: Introduction – The Paradigm of Certainty at Level-165 In classical nuclear physics, global security is predicated upon the unstable pillars of "probability" and "deterrence." However, the Time-Signature Tensor Clock-Pulse theory, specifically the integ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Protocol for the Deactivation of 12,119 Nuclear Warheads.
  Step 1: Introduction – The Paradigm of Certainty at Level-165 In classical nuclear physics, global security is predicated upon the unstable pillars of "probability" and "deterrence." However, the Time-Signature Tensor Clock-Pulse theory, specifically the integ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Protocol for the Deactivation of 12,119 Nuclear Warheads.
  Step 1: Introduction – The Paradigm of Certainty at Level-165 In classical nuclear physics, global security is predicated upon the unstable pillars of "probability" and "deterrence." However, the Time-Signature Tensor Clock-Pulse theory, specifically the integ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• From 1D to 1155D and beyond via Hamzah Equation. (165D-330D-495D-660D-825D-990D-1155D)
  The Hamzah-Omega Source Lagrangian (Dimension 1155) This equation eliminates "Information Death" and renders Hamzah’s Lagrangian sovereignty rigid and unshakable across every version of existence: $$\mathcal{L}_{Source}^{(1155)} = \oint_{\mathcal{V}_{1155}} \l…
  datacite SEYED RASOUL, HAMZAH 2026 置信度 0.66
• From 1D to 1155D and beyond via Hamzah Equation. (165D-330D-495D-660D-825D-990D-1155D)
  The Hamzah-Omega Source Lagrangian (Dimension 1155) This equation eliminates "Information Death" and renders Hamzah’s Lagrangian sovereignty rigid and unshakable across every version of existence: $$\mathcal{L}_{Source}^{(1155)} = \oint_{\mathcal{V}_{1155}} \l…
  datacite SEYED RASOUL, HAMZAH 2026 置信度 0.66
• Integrated on-chip quantum light sources on a van der Waals platform
  preprints 2026 置信度 0.74
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  crossref 2025-12-30T18:38:37Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  crossref 2026-01-29T21:24:46Z 置信度 0.70
• <i>V</i><sub>TH</sub>-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer.
  europepmc 2026 置信度 0.80
• Localized States' Role in MoS<sub>2</sub> Few-Layer Device: A Study by Schottky Capacitance Spectroscopy and Thermally Stimulated Current.
  europepmc 2026 置信度 0.80
• Applications and Material Design of Machine Learning-Enabled Metal Oxide Semiconductor Gas Sensors.
  europepmc 2026 置信度 0.80
• Solution-Processed Low-Voltage-Driven Phototransistors Using Colloidal ZnSnO<sub>3</sub> Nanocrystal.
  europepmc 2026 置信度 0.80
• Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.
  europepmc 2026 置信度 0.80
• Lattice engineering of thermally evaporated perovskite enables monolithically integrated micro-display.
  europepmc 2026 置信度 0.80
• Biomimetic ferroelectric-semiconductor transistor enables neuronal multisensory integration.
  Human brain seamlessly integrates multisensory stimuli to synthesize complementary information for enhanced perceptions, depending on neural principles of superadditivity, inverse effectiveness, and temporal congruency. Replicating multisensory integration in …
  europepmc 2026 置信度 0.80
• Tunable Narrow-Linewidth Si<sub>3</sub>N<sub>4</sub> External-Cavity Semiconductor Laser Based on an Asymmetric Bezier Triple-Ring Resonator.
  europepmc 2026 置信度 0.80
• Nitrocellulose as a Polymeric Energetic Material: Multiscale Decomposition Kinetics, Stabilization Strategies, and Micro-Ignition Architectures.
  europepmc 2026 置信度 0.80
• High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN<sub>x</sub> Layer Etching Technique.
  europepmc 2026 置信度 0.80
• Two-photon states meet polarization-gradient metasurfaces for nanometric, low-dose lateral-displacement metrology.
  europepmc 2026 置信度 0.80
• Development of a Scalable High-Power LED-Based Inspection Platform for Correlative Photoluminescence and Electroluminescence Mapping of LED Chips.
  europepmc 2026 置信度 0.80
• Contact-First Integration toward Pristine Metal-MoS<sub>2</sub> Interfaces.
  europepmc 2026 置信度 0.80
• CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation.
  europepmc 2026 置信度 0.80
• Study on Optimal Optical Parameters for Cutting Liver Tissue with a Novel 980/1470 nm Dual-Wavelength Semiconductor Laser.
  europepmc 2026 置信度 0.80
• Coupled dual-channel memristors for hardware-native trustworthy Bayesian intelligence.
  europepmc 2026 置信度 0.80
• An n-type Schottky contact with low tunneling resistance in a 2D FeB<sub>2</sub>/SiC heterostructure.
  europepmc 2026 置信度 0.80
• Carbon Dots for Electroluminescence: Bridging Molecular Fluorophores and Quantum Emitters.
  europepmc 2026 置信度 0.80
• Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs.
  europepmc 2026 置信度 0.80
• Wafer-scale robust graphene electronics under industrial processing conditions.
  europepmc 2026 置信度 0.80
• Molecular surface n-doping enables 22% efficient and highly stable inverted perovskite solar cells under 60% humidity.
  europepmc 2026 置信度 0.80
• Tailored Transport and Logic Capability of 2D Group IV-VI Semiconductor-Based Multibridge Channel FETs.
  europepmc 2026 置信度 0.80
• Overcoming the Critical Thickness Limit: Interfacial Control of Crystallization Pathways in Atomic-Scale Dielectric Thin Films.
  europepmc 2026 置信度 0.80
• Solar Cells
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Luminescent Materials and Devices
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Recent Advances in Semiconductor Device Research and Applications
  Recent Advances in Semiconductor Device Research & Applications provides a contemporary overview of next-generation semiconductor devices designed for low-power, high-speed, and high-performance electronic systems. The book focuses on emerging device archi…
  crossref 2026-06-21T13:19:31Z 置信度 0.70
• Superluminescent Light‐Emitting Diodes
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Synthesis and Characterization of Optoelectronic Materials
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Graphene and <scp>Graphene‐Based</scp> Devices
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Preface
  crossref Girdhar Gopal, Meena Panchore, Arun Kishor Johar, Tarun Varma 2026-06-21T13:19:31Z 置信度 0.70
• Exploring Deep Learning For Semiconductor Device BSIM4 Modeling
  crossref Leo Chenwei Shao 2026-03-09T19:55:54Z 置信度 0.70
• Subject Index
  crossref Girdhar Gopal, Meena Panchore, Arun Kishor Johar, Tarun Varma 2026-06-21T13:19:31Z 置信度 0.70
• Reliability and Sensitivity Analysis of TFET
  This chapter concentrated on a comprehensive study of TFET with its optical application at three specific wavelengths. Initially, ionic radiation analysis was performed over the Ge-source double gate TFET to evaluate the parameter collected charge (Qc ) and bi…
  crossref Shreyas Tiwari, Rajesh Saha, Tarun Varma 2026-06-21T13:19:31Z 置信度 0.70
• Basic Concepts of TFETs
  This chapter explores the fundamental concepts of tunnel field-effect transistors (TFETs) as an alternative to MOSFETs for energy consumption. TFETs rely on Band-to-Band Tunnelling (BTBT) to achieve a subthreshold swing below 60 mV/decade, thereby enabling ult…
  crossref A. Theja, A. Vikas, Meena Panchore, Chithraja Rajan 2026-06-21T13:19:31Z 置信度 0.70
• Progress and prospects of 2-D material-based self-powered UV photodetectors: Mechanisms and device architectures
  crossref E. Praison Jebas, Penchalaiah Palla 2025-11-03T22:49:09Z 置信度 0.70
• DEVICE APPLICATIONS OF HETEROGENEOUSLY INTEGRATED STRAIN-SWITCHED FERRIMAGNETS/TOPOLOGICAL INSULATOR/PIEZOELECTRIC STACKS
  A family of ferrimagnets (CoV2O4, GdCo, TbCo) exhibits out–of–plane magnetic anisotropy when strained compressively and in–plane magnetic anisotropy when strained expansively (or vice versa). If such a ferrimagnetic thin film is placed on top of a topological …
  crossref Supriyo Bandyopadhyay 2026-07-06T08:57:08Z 置信度 0.70
• High-performance perovskite tandem architectures: Materials innovation, device engineering, and industrial prospects
  crossref K. Durga Devi, V. Samuthira Pandi, R. Sundar, G. Vishnupriya 2025-10-18T16:07:24Z 置信度 0.70
• Solid State Physics Application in Semiconductor Device Engineering
  crossref Haoyu Xu 2026-07-20T07:13:43Z 置信度 0.70
• An Investigation of Junctionless Multigate Device and Its Application as 6T, 8T SRAM Cell at Sub-20 nm Technology Node
  In the electronic industry, the development of efficient FET devices with smaller feature sizes, lower power consumption, and improved performance has intensified competition. The key challenge remains in miniaturizing and creating energy-efficient devices. Mu…
  crossref Devender Pal Singh, Rashi Chaudhary, Menka Yadav 2026-06-21T13:19:31Z 置信度 0.70
• Tunnel Field Effect Transistor Photosensor Review: Key Characteristics
  Recently, optical sensors that consume low power and provide higher sensitivity are in high demand for various applications, including photodetectors, target tracking, etc.The Field-Effect Transistor (FET) as a photosensor has become increasingly important in …
  crossref Jai Kumar Bhatt, Varnit Goswami, Tarun Varma 2026-06-21T13:19:31Z 置信度 0.70
• Development of spin-coating UV-NIL resist for semiconductor device manufacturing
  crossref Akihiro Hakamata, Keita Kato, Kazuyuki Usuki 2026-04-08T22:06:53Z 置信度 0.70
• Carbon-Based Tunnel Field-Effect Transistor
  Carbon-based Tunnel Field-Effect Transistors (TFETs) are new devices, having special properties of carbon materials, including carbon nanotubes (CNTs), carbon graphene, and graphene nanoribbons (GNRs), to overcome the drawback of the conventional silicon-based…
  crossref P. Suveetha Dhanaselvam, B. Karthikeyan, K. Kavitha, S. Nagarajan 2026-06-21T13:19:31Z 置信度 0.70
• MXene quantum dots: Emerging multifunctional nanomaterials for optoelectronic, photonic, and smart device applications
  crossref S. Bagyalakshmi, G. Thilakavathi, Jaichitra I, A. Sivakami 等 2026-04-17T13:46:10Z 置信度 0.70
• Optimizing DC Parameters in Hetero-Stacked Source Tunneling Field-Effect Transistor
  This chapter studies a hetero-stacked source n-type TFET (HSS-nTFET) using TCAD simulations. The device uses a stacked-source structure with gate–source overlap to improve tunneling. This design increases the electric field at the source–channel junction and r…
  crossref George Mili, Zohmingliana, Brinda Bhowmick 2026-06-21T13:19:31Z 置信度 0.70
• Development in nanoscale device simulation and opportunities in electronic fabrication
  crossref B. Mounika, Sresta Valasa 2026-08-24T15:15:20Z 置信度 0.70
• Advancements in Power Optimization for CMOS Complementary Transistor Configurations
  This chapter focusses on a comparison of SRAM cell design with six, eight, and ten cell designs and discusses them in the context of various technology nodes, such as 45nm, 90nm, and 180nm. The emphasis is put on essential performance aspects, such as power co…
  crossref Prajwal B. Pillewan, Prabhat Singh, Dharmendra Singh Yadav 2026-06-21T13:19:31Z 置信度 0.70
• Device Structure Estimation by Inverse Calculation and Its Application to Semiconductor Manufacturing
  crossref Tomohiko Mori, Ryosuke Okachi, Junya Muramatsu, Makoto Kuwahara 等 2026-06-11T19:58:48Z 置信度 0.70
• Enhancement of retention characteristics of organic field-effect memory device with pentacene/N2200/tetracene heterostructure
  crossref Lei Wu, Jing Chen, Qiao Luo, Luanfang Duan 2025-12-15T10:27:38Z 置信度 0.70
• A PCB-BASED 100NS PULSE MODULATOR FOR ATT DEVICE: CIRCUIT DESIGN AND ITS APPLICATION IN DEFENCE
  A high-speed, high-stability nanosecond pulse modulator has been designed and developed for biasing a pulsed IMPATT oscillator operating in the W-band (75–110 GHz). The modulator delivers current pulses up to 12 A with a rise time of approximately 10ns, a puls…
  crossref Niratyay Biswas, Debraj Chakraborty 2026-07-06T08:57:08Z 置信度 0.70
• Dielectric-Modulated Negative Capacitance Tunnel FET for Highly Sensitive Biosensing Applications
  The biosensing potential of a ferroelectric negative capacitance biosensor tunnel field-effect transistor (FENCB-TFET) is investigated in this chapter using a dielectric modulation technique. The design features nanoscale pores near the source and drain region…
  crossref Anil Kumar Pathakamuri, Chandan Kumar Pandey, Girdhar Gopal 2026-06-21T13:19:31Z 置信度 0.70
• AI-Driven Automation of Semiconductor Device Design Integrating Silvaco TCAD
  crossref Arijit Mondal, Ankit Biswas, Indranil Maity 2026-03-18T19:37:42Z 置信度 0.70
• Novel Methodology for Examining Dynamic Correlations in Semiconductor Device Markets
  crossref Takashi Ogawa 2026-05-24T22:09:57Z 置信度 0.70
• Data-Driven Root Cause Analysis for Semiconductor Device Unrepeatable Issue
  crossref Jingqi Wang, Guangyao Zhang, Ziyang Liu, Qiaoling Tian 等 2026-06-02T20:03:17Z 置信度 0.70
• Nano Device for SRAM Memory Arrays
  crossref Akey Sungheetha, R. Rajesh Sharma, Sheila Mahapatra 2026-03-27T21:20:37Z 置信度 0.70
• Accurate and Tailor-Made Semiconductor Device Models for System Simulations Across Diverse Circuit Topologies and Operating Conditions
  crossref Paul Sochor, Andreas Huerner, Jaime Zapata-Amores 2026-07-16T21:48:50Z 置信度 0.70
• High Stability, Piezoelectric Response, and Promising Photocatalytic Activity on the New Pentagonal CGeP(4) Monolayer.
  This study introduces the penta-structured semiconductor p-CGeP 4 through density functional theory simulations, which possesses an indirect band gap transition of 3.20 eV. Mechanical analysis confirms the mechanical stability of p-CGeP 4 , satisfying Born-Hua…
  pubmed Laranjeira JAS, Martins N, Denis PA, Sambrano J 2025 Jan 22 置信度 0.82
• Heat-Assisted Direct Photopatterning of Small-Molecule OLED Emitters at the Micrometer Scale.
  A crucial step in fabricating full-color organic light-emitting diode (OLED) displays is patterning the emissive layer (EML). Traditional methods utilize thermal evaporation through metal masks. However, this limits the achievable resolution required for emerg…
  pubmed Roh S, Lee S, Ham H, Jhun BH 等 2025 May 置信度 0.82
• A Carbon Nanotube Transistor Based on Buried-Gate Structure.
  From the discovery of carbon nanotubes to the ability to prepare high-purity semiconductor carbon nanotubes in large quantities, the large-scale fabrication of carbon nanotube transistors (CNT) will become possible. In this paper, a carbon nanotube transistor …
  pubmed Li H, Liao Y, Zhang F, Sun T 等 2025 Jan 7 置信度 0.82
• High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes.
  The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-…
  pubmed Park MW, Kim S, Son SY, Kim SW 等 2025 Jan 7 置信度 0.82
• SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network.
  The SiC MOSFET with an integrated SBD (SBD-MOSFET) exhibits excellent performance in power electronics. However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation methods are ofte…
  pubmed Niu X, Sang L, Duan X, Gu S 等 2024 Dec 31 置信度 0.82
• A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission.
  This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. …
  pubmed Tang H, Tang A, Liu W, Huang J 等 2024 Dec 31 置信度 0.82
• Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers.
  We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P + rings and width-modulated multiple trenches were utilized to alleviate electric-field c…
  pubmed Kim S, Seok O 2024 Dec 30 置信度 0.82