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• A ferroelectric-memristor memory for both training and inference.
  Developing artificial intelligence systems that are capable of learning at the edge of a network requires both energy-efficient inference and learning. However, current memory technology cannot provide the necessary combination of high endurance, low programmi…
  pubmed Martemucci M, Rummens F, Malot Y, Hirtzlin T 等 2025 置信度 0.82
• A clean van der Waals interface between the high-k dielectric zirconium oxide and two-dimensional molybdenum disulfide.
  Two-dimensional transition metal dichalcogenide semiconductors possess ideal attributes for meeting industry scaling targets for transistor channel technology. However, the development of scaled field-effect transistors (FETs) requires industry-compatible gate…
  pubmed Yan H, Wang Y, Li Y, Phuyal D 等 2025 置信度 0.82
• Monolithic 3D Integration of Vertical Memory with Phototransistor for Near-Sensor Cryptography and Homomorphic Data Searching.
  Inspired by the human retina, retinomorphic systems achieve efficient near-sensor processing by tightly integrating sensing, memory, and computing. However, unlike biological vision, which evolved without selective pressure for data confidentiality, artificial…
  pubmed Alimkhanuly B, Lee M, Lee S, Devnath A 等 2026 置信度 0.82
• Comparison of short- and long-term outcomes of diode laser vs. crystallized phenol treatment for pilonidal sinus disease: A propensity score-matched multicentre study.
  Pilonidal sinus disease (PSD) primarily affects young adults; rapid recovery is essential and yet lacks a standardized treatment approach. While excisional techniques delay recovery, minimally invasive options like laser ablation and phenol application are gai…
  pubmed Bilgin İA, Ramoglu N, Saylık O, Benlice C 等 2025 Nov 置信度 0.82
• Ultralow-Power Peptide-Based Memristor Enabled by Emulation of Proton-Mediated Synaptic Signaling.
  The substantial power consumption of traditional computing architectures, arising from the physical separation of memory and processing units, has motivated the exploration of neuromorphic systems that emulate the remarkable energy efficiency of the human brai…
  pubmed Yoon JH, Ham W, Park KJ, Namgung SD 等 2025 Dec 置信度 0.82
• Self-Assembled Bilayers with Improved Solvent Resistance for Stable Inverted Perovskite Solar Cells.
  The self-assembled monolayer (SAM) molecules on ITO or metal oxide transporting layers tend to desorb during perovskite film processing and device operation, leading to reduced power conversion efficiency (PCE) and device degradation. Developing effective stra…
  pubmed Soliman AIA, Zheng Y, You G, Zhang L 等 2025 Dec 置信度 0.82
• Bio-hybrid photoelectrochemical catalysis for solar fuels and chemicals conversion.
  Bio-hybrid photoelectrochemical (PEC) devices integrate the complementary advantages of both biocatalyst and abiotic components, providing opportunities for efficient catalysis under mild conditions with high selectivity and low over-potential. However, the pr…
  pubmed Cai B, Pavliuk MV, Berggren G, Tian H 2025 Oct 14 置信度 0.82
• Multimodal In-Sensor Computing with Dual-Phase Organic Synapses for Wearable Fitness Monitoring.
  With the advancement of wearable and mobile devices, demand for the real-time, low-power processing of physiological and environmental signals is growing rapidly. To achieve this, neuromorphic systems that employ artificial synapses for analog signal processin…
  pubmed Mao Y, Choi Y, Qian C, Roe DG 等 2026 Jan 置信度 0.82
• Preventive and therapeutic effects of semiconductor laser on pain in root canal treatment.
  This study aimed to evaluate the preventive and therapeutic effects of semiconductor laser on postoperative pain in root canal treatment and to compare the clinical efficacy of different laser application methods.
  pubmed Jian Y 2025 Oct 8 置信度 0.82
• Ferroelectric Properties of Bilayer MoS(2)/WS(2) Heterostructure Modulated by Twist Angle.
  The emergence of sliding ferroelectricity is found in non-ferroelectric two-dimensional materials, which brings novel ferroelectric phenomena and expands the potential for advancing ferroelectric devices. Experimental studies have largely focused on slidi…
  pubmed Wang L, Xia Z, Sun X, Xu S 等 2025 Dec 置信度 0.82
• Torsional-via-Assisted Nanoelectromechanical Memory Switches
  crossref Jin Wook Lee, Geun Tae Park, Myeong Su Shin, Woo Young Choi 2024-10-18T17:31:40Z 置信度 0.70
• Biomimetic Microstructure Design for Superhydrophobic Structure in Triboelectric Nanogenerator Device
  crossref Firdaus Jamal Rashid, Abang Annuar Ehsan, Muhammad Aniq Shazni Mohammad Haniff 2024-09-25T17:27:39Z 置信度 0.70
• Fracture Behaviors of a Mode-I Crack in a Piezoelectric Semiconductor Medium
  crossref Lei Zhou, Xing Zhao, Jinxi Liu 2025-02-18T18:16:29Z 置信度 0.70
• Modeling of Content addressable memory using 2D Reconfigurable Transistors
  crossref Ashwin Tunga, Junzhe Kang, Ziing Zhao, Ankit Shukla 等 2024-07-29T19:15:01Z 置信度 0.70
• Innovative two-step method for efficient silicon microfluidic device fabrication: Integrating laser ablation with wet etching
  crossref Haobo Wang, Hua Tong, Cui Liu, Xiao Yuan 等 2024-02-18T16:58:16Z 置信度 0.70
• Review on the Thermal Parameters Applications in the Reliability of Power Semiconductor Device
  crossref Huixian Shen, Jun Zhang, Pengju Sun, Xing Ma 2024-07-15T17:19:20Z 置信度 0.70
• A Study on Semiconductor Device Training Using Digital-Twins and Solid-edge
  crossref Eugene Jeon, Yeon Hee Kim, Gyeong Min Lee 2024-12-31T19:22:54Z 置信度 0.70
• FuncAnoDe: A Function Level Anomaly Detection in Device Simulation
  crossref Tae IL Oh, Hong Chul Nam, Chanwoo Park, Hyunbo Cho 2024-10-31T17:32:06Z 置信度 0.70
• Feed-Forward Run-to-Run Process Control Based on Device Array Density for LPCVD Furnace Processes
  crossref Prabhakar K Bharatan, Farid Sellidj 2024-06-06T17:21:59Z 置信度 0.70
• Analog content-addressable memory from complementary FeFETs
  crossref Xiwen Liu, Keshava Katti, Yunfei He, Paul Jacob 等 2023-12-19T10:43:06Z 置信度 0.70
• Development of Through Semiconductor via Manufacturing Process for Heterogeneous Integration of GaN Power Device on Si-LSI
  crossref Hidejiro Mishima, Kaiyuan Zheng, Satoshi Matsumoto, Satoko Shinkai 2024-12-24T19:11:30Z 置信度 0.70
• Evaluation of Warpage Deformation in Semiconductor Device Packaging Process
  Abstract Compression molding is gaining attention as a next-generation method for molding high-density and thinner semiconductors, driven by the increasing demand for products like smartphones and tablets. Unlike traditional methods, it involves uniformly supp…
  crossref Taiju Yagi, Qiang Yu, Haruyuki Shimada, Yuichi Yanaka 等 2024-11-13T23:43:05Z 置信度 0.70
• Al-InAs Superconductor-Semiconductor Josephson Junction Parametric Amplifier
  crossref Z. Hao, T. Shaw, M. Hatefipour, W. M. Strickland 等 2024-07-29T19:15:01Z 置信度 0.70
• Semiconductor Crystals and Device Physics
  crossref Hisashi Masui 2024-06-12T04:01:58Z 置信度 0.70
• Development of Automatic Cross-Sectional Scanning-Electron-Microscope-Observation Technique using Image Recognition of Semiconductor-Device Structure
  crossref Takashi Dobashi, Hiroyuki Yamamoto, Takeshi Ohmori 2024-07-25T04:14:26Z 置信度 0.70
• A Physical Retention Model Valid for Retarded Cross-Temperature Instability Analysis of 3-D NAND Flash Memory
  crossref Chanyang Park, Jiyoon Kim, Kihoon Nam, Donghyun Kim 等 2025-10-28T17:33:04Z 置信度 0.70
• Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications
  Bilayer transition metal dichalcogenides (TMDs) are promising materials for next-generation field-effect transistors (FETs) due to their atomically thin structure and favorable transport properties. In this study, we employ density functional theory (DFT) to c…
  crossref Shoaib Mansoori, Edward Chen, Massimo Fischetti 2025-10-06T08:10:51Z 置信度 0.70
• Traps in GaN HEMTs: From Characterization to Model Development and Device Optimization
  crossref Petros Beleniotis, Christos Zervos, Sascha Krause, Hossein Yazdani 等 2025-10-31T17:09:13Z 置信度 0.70
• Exploring semiconductor qubits: simulation of a four quantum dot silicon device
  Abstract Quantum computing represents a revolutionary computational paradigm with the potential to overcome the limitations of classical computers. Among the various approaches under investigation, semiconductor-based solutions stand out as promising candidate…
  crossref Giovanni Pedicini, Antonio Tudisco, Mario Cignoni, Mariagrazia Graziano 等 2025-08-01T22:49:22Z 置信度 0.70
• Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence
  crossref Thomas Nuytten, Albert Minj, Stefanie Sergeant, Quentin Smets 等 2025-03-25T19:24:45Z 置信度 0.70
• Few-Shot AI Segmentation of Semiconductor Device FIB-SEM Tomography Data
  Abstract Image segmentation is a valuable tool for visual image data inspection of semiconductor device structures. For the large amounts of data provided by recent advancements in automated scanning electron microscope (SEM) and focused ion beam-scanning elec…
  crossref Heiko Stegmann, Flavio Cognigni 2025-07-15T17:05:20Z 置信度 0.70
• Optimization of Asymmetries in Source/Drain Configurations and Tapered Channels for Vertical-Transport Silicon Nanosheet FETs
  crossref Jinsu Jeong, Sanguk Lee, Rock-Hyun Baek 2024-11-19T13:39:53Z 置信度 0.70
• A Junction Photoconductive Semiconductor Switch (J-PCSS) in AlN With Sub-Band Gap Responsivity and Accelerated Turn-Off Speed
  crossref Jiahao Dong, Rafael Jaramillo 2025-04-07T21:52:01Z 置信度 0.70
• Enhancing device reliability in Pt/Ti/Al2O3/p-Ge metal-oxide-semiconductor memcapacitor via CF4 plasma treatment of Ge
  crossref Eunjeong Cho, Min Jeong Kim, Seyoung Oh, Woojin Park 等 2025-04-23T03:07:18Z 置信度 0.70
• Device Placement Optimization Based on Sequential Q-Learning Using Local Layout Effect Surrogate Models
  crossref KwonWoo Kang, SoYoung Kim 2025-03-11T01:12:47Z 置信度 0.70
• Challenges to Symbiotic Growth of Semiconductor & AI Industries: A 2^nd-Path Moore’s Law Scaling for Deep, Broad, and Exponential Intelligence Economics
  crossref Nicky Lu 2025-08-11T17:40:59Z 置信度 0.70
• Silicon-Germanium (SiGe) Epitaxial Growth for Enhanced Device, Yield, and Uniformity
  crossref Yuchen Du, Vitor Rossi Vulcano, Yao Yao, Wen Zhi Gao 等 2025-05-27T17:05:07Z 置信度 0.70
• Simulating Two-Qubit Gates Under the Influence of Charge Defects in an FD-SOI Device
  crossref Pericles Philippopoulos, Félix Beaudoin, Philippe Galy 2025-10-28T17:31:15Z 置信度 0.70
• A virtual factory-based environment for semiconductor device development
  crossref W.T. Wong, J.Y.-C. Pan, J.D. Plummer 2003-01-02T12:45:18Z 置信度 0.70
• On the Effect of Epi Base Thickness of SiGe HBTs in BiCMOS Process: A Quest for Device Leakage Optimization
  crossref Ann Ann Boo, Belinda Ng 2025-05-27T17:05:07Z 置信度 0.70
• Machine Learning Based Parameters Estimation for Electrical Circuits and Semiconductor Device Models
  crossref Muhammad Jawad, Martin Hess, Akif Zia Khan, Pawel Dawidowski 等 2025-11-25T18:26:49Z 置信度 0.70
• Postmodern Physics of Hamzah Information.(194)
  تحلیل بنیادین، بازنویسی تانسوری و اثبات جامعِ کامل پارادوکس فوق‌کشسانی اتمی و فروریزش مدل‌های شکست مکانیکی در نانوالیاف پلیمری تحت تأثیر نوسانات خلأ (The Quantum-Induced Hyper-Elasticity Paradox and Mechanical Collapse in Polymer Nanofibers - معمای شماره ۷۱ از…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(194)
  تحلیل بنیادین، بازنویسی تانسوری و اثبات جامعِ کامل پارادوکس فوق‌کشسانی اتمی و فروریزش مدل‌های شکست مکانیکی در نانوالیاف پلیمری تحت تأثیر نوسانات خلأ (The Quantum-Induced Hyper-Elasticity Paradox and Mechanical Collapse in Polymer Nanofibers - معمای شماره ۷۱ از…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Multi-disciplinary study of a new 3D cobalt (II) complex: from crystal engineering to antimicrobial drug potential
  This study reports the preparation, spectroscopic characterization, and biological evaluation of a novel three-dimensional coordination complex, C 10 H 24 N 6 [Co(SCN) 4 ]. The compound crystallizes in the P2 1 /n space group, featuring a structure where termi…
  datacite Jawher Makhlouf, Khaoula Abidi, Hitler Louis, Amal Ferchichi 等 2026 置信度 0.66 BiophysicsBiochemistryPhysical Sciences not elsewhere classifiedPharmacologyBiotechnology
• Multi-disciplinary study of a new 3D cobalt (II) complex: from crystal engineering to antimicrobial drug potential
  This study reports the preparation, spectroscopic characterization, and biological evaluation of a novel three-dimensional coordination complex, C 10 H 24 N 6 [Co(SCN) 4 ]. The compound crystallizes in the P2 1 /n space group, featuring a structure where termi…
  datacite Jawher Makhlouf, Khaoula Abidi, Hitler Louis, Amal Ferchichi 等 2026 置信度 0.66 BiophysicsBiochemistryPhysical Sciences not elsewhere classifiedPharmacologyBiotechnology
• Postmodern Physics of Hamzah Information.(16)
  بازنویسی پارادایم‌شکن و اثباتی فیزیک اتمی و مولکولی در چارچوب «فیزیک اطلاعات حمزه» (HIP-1155) پیرو مطالبات سخت‌گیرانه برای ارتقای سطح تحلیل از توصیفات سطحی به تراز مهندسی سورس‌کد کیهان، در این نوشتار فیزیک اتمی و مولکولی و بحران‌های بنیادین آن (از جمله فاجعه خ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• zenDot: An LLM-integrated quantum TCAD platform for semiconductor quantum-device design and optimization automation
  Semiconductor quantum-device design still lacks an integrated Technology Computer-Aided Design (TCAD)-like environment that connects material geometry, quantum many-body simulation, and automated design. Here we introduce zenDot, a large-language model (LLM)-i…
  datacite Wang, Zeheng, Liu, Yan, Hao, Yue, Han, Genquan 2026 置信度 0.66 Quantum Physics (quant-ph)Numerical Analysis (math.NA)Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Mathematics
• Postmodern Physics of Hamzah Information.(16)
  بازنویسی پارادایم‌شکن و اثباتی فیزیک اتمی و مولکولی در چارچوب «فیزیک اطلاعات حمزه» (HIP-1155) پیرو مطالبات سخت‌گیرانه برای ارتقای سطح تحلیل از توصیفات سطحی به تراز مهندسی سورس‌کد کیهان، در این نوشتار فیزیک اتمی و مولکولی و بحران‌های بنیادین آن (از جمله فاجعه خ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(16)
  بازنویسی پارادایم‌شکن و اثباتی فیزیک اتمی و مولکولی در چارچوب «فیزیک اطلاعات حمزه» (HIP-1155) پیرو مطالبات سخت‌گیرانه برای ارتقای سطح تحلیل از توصیفات سطحی به تراز مهندسی سورس‌کد کیهان، در این نوشتار فیزیک اتمی و مولکولی و بحران‌های بنیادین آن (از جمله فاجعه خ…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Parallel Quadratic Selected Inversion in Quantum Transport Simulation
  Driven by Moore's law, the dimensions of transistors have been pushed down to the nanometer scale so that advanced quantum transport (QT) solvers are nowadays required to reliably design such nano-devices. The non-equilibrium Green's function (NEGF) formalism …
  datacite Maillou, Vincent, Bollhofer, Matthias, Schenk, Olaf, Ziogas, Alexandros Nikolaos 等 2026 置信度 0.66 Selected inversionSemiconductor device modelingDistributed linear algebraGreen's function computing
• Eleven Core Constitutive Equations of Six-Dimensional Global Spin-Torsion Unified Framework
  This paper constructs a spin-torsion coupling theoretical framework based on six-dimensional global spin unified field theory. A set of phenomenological core equations are derived, which can rationally explain the fermion mass hierarchy problem, strong CP puzz…
  datacite Zhang, Xiangdong 2026 置信度 0.66
• Comprehensive Semiconductor Device Simulation For Silicon ULSI
  A dissertation submitted to the Department of Electrical Engineering and the Committee on Graduate Studies of Stanford University in partial fulfullment of the requirements for the degree of Doctor of Philosophy in Electrical Engineering
  datacite Pinto, Mark Richard 1990 置信度 0.66
• Comprehensive Semiconductor Device Simulation For Silicon ULSI
  A dissertation submitted to the Department of Electrical Engineering and the Committee on Graduate Studies of Stanford University in partial fulfullment of the requirements for the degree of Doctor of Philosophy in Electrical Engineering
  datacite Pinto, Mark Richard 1990 置信度 0.66
• Eleven Core Constitutive Equations of Six-Dimensional Global Spin-Torsion Unified Framework
  This paper constructs a spin-torsion coupling theoretical framework based on six-dimensional global spin unified field theory. A set of phenomenological core equations are derived, which can rationally explain the fermion mass hierarchy problem, strong CP puzz…
  datacite Zhang, Xiangdong 2026 置信度 0.66
• Eleven Core Constitutive Equations of Six-Dimensional Global Spin-Torsion Unified Framework
  This paper constructs a spin-torsion coupling theoretical framework based on six-dimensional global spin unified field theory. A set of phenomenological core equations are derived, which can rationally explain the fermion mass hierarchy problem, strong CP puzz…
  datacite Zhang, Xiangdong 2026 置信度 0.66
• Eleven Core Constitutive Equations of Six-Dimensional Global Spin-Torsion Unified Framework
  This paper constructs a spin-torsion coupling theoretical framework based on six-dimensional global spin unified field theory. A set of phenomenological core equations are derived, which can rationally explain the fermion mass hierarchy problem, strong CP puzz…
  datacite Zhang, Xiangdong 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(196)
  تحلیل بنیادین، بازنویسی تانسوری و اثبات جامعِ کامل پارادوکس دیوار آتش و فروپاشی اصل هم‌ارزی در تبخیر سیاهچاله‌ها (The Firewall Paradox and Equivalence Principle Breakdown in Black Hole Evaporation - معمای شماره ۹۱ از ۱۰۰) در بستر فیزیک اطلاعات حمزه (HIP-1155) …
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Portable Handheld Quantum Navigation Systems (PQN) for GNSS-Denied Environments: Breaking the Artisanal Bottleneck for Production
  The basic difficulties and challenges in the production of a portable handheld quantum navigation device are discussed in principle. An overview of technical details, videos and pictures of the device can be reviewed at https://samarium.group/quantum-navigatio…
  datacite Demedici, Guido 2026 置信度 0.66 quantum navigation
• Portable Handheld Quantum Navigation Systems (PQN) for GNSS-Denied Environments: Breaking the Artisanal Bottleneck for Production
  The basic difficulties and challenges in the production of a portable handheld quantum navigation device are discussed in principle. An overview of technical details, videos and pictures of the device can be reviewed at https://samarium.group/quantum-navigatio…
  datacite Demedici, Guido 2026 置信度 0.66 quantum navigation
• Postmodern Physics of Hamzah Information.(194)
  تحلیل بنیادین، بازنویسی تانسوری و اثبات جامعِ کامل پارادوکس فوق‌کشسانی اتمی و فروریزش مدل‌های شکست مکانیکی در نانوالیاف پلیمری تحت تأثیر نوسانات خلأ (The Quantum-Induced Hyper-Elasticity Paradox and Mechanical Collapse in Polymer Nanofibers - معمای شماره ۷۱ از…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Boundary-Driven Ontology: How Micro-Scale Cross- Sectional Interventions in Semiconductor Systems Reconfigure High-Dimensional Macroscopic State Spaces
  A persistent philosophical and physical question concerns how human agents—physically bounded within a 3 + 1dimensional spacetime horizon—can manipulate and control extremely complex, high-dimensionalmacro-systems such as artificial intelligence models, global…
  datacite Min, Jinseong 2026 置信度 0.66 Boundary-Driven OntologyHolographic PrincipleSemiconductor PhysicsNPN TransistorsState Space Trajectories
• Boundary-Driven Ontology: How Micro-Scale Cross- Sectional Interventions in Semiconductor Systems Reconfigure High-Dimensional Macroscopic State Spaces
  A persistent philosophical and physical question concerns how human agents—physically bounded within a 3 + 1dimensional spacetime horizon—can manipulate and control extremely complex, high-dimensionalmacro-systems such as artificial intelligence models, global…
  datacite Min, Jinseong 2026 置信度 0.66 Boundary-Driven OntologyHolographic PrincipleSemiconductor PhysicsNPN TransistorsState Space Trajectories
• YARIMO'TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.
  To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis…
  datacite Jo'rayev, G'ulomjon, Toshboyev, Olmos, Qobilov, Dilmurod, Oʻralov, Shaxriyor 2026 置信度 0.66 semiconductor, silicon, germanium, electrical conductivity, doping, electron, hole, p–n junction, band gap.
• YARIMO'TKAZGICHLAR VA ULARNING FIZIK-KIMYOVIY XOSSALARI.
  To systematize the analysis of crystal structure, physicochemical properties, electrical conductivity mechanisms, and technological applications of semiconductor materials. Comparative analysis was conducted based on solid-state physics, band theory, synthesis…
  datacite Jo'rayev, G'ulomjon, Toshboyev, Olmos, Qobilov, Dilmurod 2026 置信度 0.66 semiconductor, silicon, germanium, electrical conductivity, doping, electron, hole, p–n junction, band gap.
• Three-Dimensional Transistor Fabrication: A Comprehensive Study of Physics, Chemistry, and Engineering
  This research paper presents a rigorous and comprehensive investigation into the fabrication, physics, and engineering of three-dimensional (3D) transistors — the cornerstone architecture underpinning modern sub-10 nm semiconductor technology. From the mathema…
  datacite Aldhufri, Khaled 2026 置信度 0.66
• Three-Dimensional Transistor Fabrication: A Comprehensive Study of Physics, Chemistry, and Engineering
  This research paper presents a rigorous and comprehensive investigation into the fabrication, physics, and engineering of three-dimensional (3D) transistors — the cornerstone architecture underpinning modern sub-10 nm semiconductor technology. From the mathema…
  datacite Aldhufri, Khaled 2026 置信度 0.66
• Electron Replacement Mechanism of Electron Tunneling and Guidance for Industrial Production
  The traditional quantum tunneling theory, centered on probability penetration, cannot provide intuitive and practical physical guidance for the R&D and parameter regulation of electron tunneling devices in industrial production. Abandoning the inapplicable qua…
  datacite Yan, Jiaqing 2026 置信度 0.66 Electron tunneling; electron replacement mechanism; chained replacement; potential barrier thickness; industrial production; semiconductor devices
• Electron Replacement Mechanism of Electron Tunneling and Guidance for Industrial Production
  The traditional quantum tunneling theory, centered on probability penetration, cannot provide intuitive and practical physical guidance for the R&D and parameter regulation of electron tunneling devices in industrial production. Abandoning the inapplicable qua…
  datacite Yan, Jiaqing 2026 置信度 0.66 Electron tunneling; electron replacement mechanism; chained replacement; potential barrier thickness; industrial production; semiconductor devices
• Ocaya-Yakuphanoğlu (OY) Analysis & Diode I-V Characterization
  This is an open-source Python tool for automated parameter extraction and series resistance (Rs) compensation in Metal-Oxide-Semiconductor (MOS) and Metal-Semiconductor (MS) Schottky devices. This repository implements the Ocaya-Yakuphanoğlu (OY) Method alongs…
  datacite R.O. Ocaya 2026 置信度 0.66
• Ocaya-Yakuphanoğlu (OY) Analysis & Diode I-V Characterization
  This is an open-source Python tool for automated parameter extraction and series resistance (Rs) compensation in Metal-Oxide-Semiconductor (MOS) and Metal-Semiconductor (MS) Schottky devices. This repository implements the Ocaya-Yakuphanoğlu (OY) Method alongs…
  datacite R.O. Ocaya 2026 置信度 0.66
• Nanobots
  Engineering Audit and Systems Architecture Report: The Monolithic Stone-QCAD Framework Corporate Origin: Stone Software Solutions LLC Principal Architect: Travis Raymond-Charlie Stone Document Identification Tiers: S S S STEM COMP Two Zero Two Six Zero Zero Tw…
  datacite Stone, Travis Raymond-Charlie 2026 置信度 0.66
• Nanobots
  Engineering Audit and Systems Architecture Report: The Monolithic Stone-QCAD Framework Corporate Origin: Stone Software Solutions LLC Principal Architect: Travis Raymond-Charlie Stone Document Identification Tiers: S S S STEM COMP Two Zero Two Six Zero Zero Tw…
  datacite Stone, Travis Raymond-Charlie 2026 置信度 0.66
• Optical mode calculation in large-area photonic crystal surface-emitting lasers
  We discuss algorithms and numerical challenges in constructing and resolving spectral prob- lems for photonic crystal surface-emitting lasers (PCSELs) with photonic crystal layers and large (up to several tens of mm2) emission areas. We show that finite differ…
  datacite Radziunas, Mindaugas, Kuhn, Eduard, Wenzel, Hans, King, Ben 等 2023 置信度 0.66 510Semiconductor diodePCSELphotonic crystalsurface-emitting laser
• Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
  Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of devic…
  datacite Ciroth, Nils, Sala, Arnau, Xue, Ran, Ermoneit, Lasse 等 2025 置信度 0.66 510Spin-qubitsquantum computersquantum dotssemiconductor device simulation
• Optimal control of conveyor-mode spin-qubit shuttling in a Si/SiGe quantum bus in the presence of charged defects
  [no abstract available]
  datacite Ermoneit, Lasse, Schmidt, Burkhard, Koprucki, Thomas, Fuhrmann, Jürgen 等 2023 置信度 0.66 510Spin-qubitsquantum computersquantum dotssemiconductor device simulation
• A drift-diffusion based electrothermal model for organic thin-film devices including electrical and thermal environment
  We derive and investigate a stationary model for the electrothermal behavior of organic thin-film devices including their electrical and thermal environment. Whereas the electrodes are modeled by Ohm's law, the electronics of the organic device itself is descr…
  datacite Glitzky, Annegret, Liero, Matthias 2023 置信度 0.66 510Drift-diffusion systemheat equationexistence for coupled electrothermal systemregularity theory
• Design and Optimization of Vertical FTO/BaHfS₃/Au Devices: Thickness, Interface and Contact Effects
  This study presents a numerical investigation of vertical devices based on the lead-free chalcogenide perovskite , focusing on the effects of absorber thickness, metal contact work function, and interface quality on device performance. Using SCAPS-1D simulatio…
  datacite Karaca, Abdullah, Yıldız, Dilber Esra 2026 置信度 0.66 BaHfS₃Chalcogenide perovskitesSCAPS-1D simulationResponsivityEQE
• Design and Optimization of Vertical FTO/BaHfS₃/Au Devices: Thickness, Interface and Contact Effects
  This study presents a numerical investigation of vertical devices based on the lead-free chalcogenide perovskite , focusing on the effects of absorber thickness, metal contact work function, and interface quality on device performance. Using SCAPS-1D simulatio…
  datacite Karaca, Abdullah, Yıldız, Dilber Esra 2026 置信度 0.66 BaHfS₃Chalcogenide perovskitesSCAPS-1D simulationResponsivityEQE
• Advanced Experimental Techniques (growth & fabrication) of semiconductor nanostructures: From morphology to electronic states
  In view of their size-dependent properties, both physical and chemical, semiconductor nanostructures have emerged as an essential component within modern nanotechnology. Novel device functionalities and adaptable electronic states are being established as poss…
  datacite Pragati Sharma, Bhomik Nahariya, Aryan Rajput, Vansh 2026 置信度 0.66
• Advanced Experimental Techniques (growth & fabrication) of semiconductor nanostructures: From morphology to electronic states
  In view of their size-dependent properties, both physical and chemical, semiconductor nanostructures have emerged as an essential component within modern nanotechnology. Novel device functionalities and adaptable electronic states are being established as poss…
  datacite Pragati Sharma, Bhomik Nahariya, Aryan Rajput, Vansh 2026 置信度 0.66
• Substrate-Neutral Structural Foundation Laws (SNSFL) PNBA Identity Physics: Si-Silicon-Anchor Manifold Matrix Dataset v1 051626
  SNSFL TECHNICAL MEMORANDUM V1.051826C, MAY 2026 Substrate-Neutral Structural Foundation Laws (SNSFL):Condensed-Matter Characterization and Manufacturing Pathwaysfor the Silicon-Anchor Manifold Matrix (v1.051826C) Russell TrentPrincipal and Theoretical Architec…
  datacite Trent, Russell 2026 置信度 0.66
• Substrate-Neutral Structural Foundation Laws (SNSFL) PNBA Identity Physics: Si-Silicon-Anchor Manifold Matrix Dataset v1 051626
  SNSFL TECHNICAL MEMORANDUM V1.051826C, MAY 2026 Substrate-Neutral Structural Foundation Laws (SNSFL):Condensed-Matter Characterization and Manufacturing Pathwaysfor the Silicon-Anchor Manifold Matrix (v1.051826C) Russell TrentPrincipal and Theoretical Architec…
  datacite Trent, Russell 2026 置信度 0.66
• Towards efficient GHz acoustic wave injection in μm-scale unsuspended geometries: A case study in ScAlN on Silicon on Sapphire
  Focusing GHz frequency acoustic fields into and out of wavelength μm-scale unreleased waveguide geometries with near-unity efficiency is of potential interest in a variety of problems ranging from building chipscale microwave to optical photon transducers and …
  datacite James Miklaucich, Krishna Coimbatore Balram, Mahmut Bicer, Tom Reinacher 等 2026 置信度 0.66 Physical sciences
• Towards efficient GHz acoustic wave injection in μm-scale unsuspended geometries: A case study in ScAlN on Silicon on Sapphire
  Focusing GHz frequency acoustic fields into and out of wavelength μm-scale unreleased waveguide geometries with near-unity efficiency is of potential interest in a variety of problems ranging from building chipscale microwave to optical photon transducers and …
  datacite James Miklaucich, Krishna Coimbatore Balram, Mahmut Bicer, Tom Reinacher 等 2026 置信度 0.66 Physical sciences
• <strong>On the Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors</strong>
  A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in crystalline order, dimension…
  datacite Xiao Wang, Chankeun Yoon, Ananth Dodabalapur 2026 置信度 0.66 Physical sciences
• Theoretical Study of Quantum Tunneling in Semiconductor Devices
  Quantum tunneling is one of the most important quantum-mechanical effects used in modern electronics. Although classical physics predicts that a particle with energy lower than a barrier cannot cross it, quantum theory shows that there is still a finite probab…
  datacite Rhushikesh S. Jawale, Bharti D. Pawar 2026 置信度 0.66
• Theoretical Study of Quantum Tunneling in Semiconductor Devices
  Quantum tunneling is one of the most important quantum-mechanical effects used in modern electronics. Although classical physics predicts that a particle with energy lower than a barrier cannot cross it, quantum theory shows that there is still a finite probab…
  datacite Rhushikesh S. Jawale, Bharti D. Pawar 2026 置信度 0.66
• Adaptive Sequential Test Planning for Multi-Mechanism Reliability Qualification via Bayesian Monte Carlo Tree Search
  Reliability qualification of advanced semiconductor devices requires sequential stress decisions that balance characterization objectives against multiple competing failure mechanisms. Current practice relies on static test plans derived from population-level …
  datacite Elhagrasy, Youssef A., Hill, Ian, Ivanov, André 2026 置信度 0.66 Artificial Intelligence (cs.AI)Systems and Control (eess.SY)FOS: Computer and information sciencesFOS: Electrical engineering, electronic engineering, information engineering
• Ferroelectric gate on AlGaN/GaN heterostructures
  The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric random ac…
  datacite Malin, Lisa 2007 置信度 0.66 ferroelectric gateAlGaN/GaN heterostructuretwo dimensional electron gasferroelectric field effect transistor
• Analysis of Scaling Effects and Low Power Techniques in Deep Submicron VLSI Design
  Very Large Scale Integration (VLSI) technology has revolutionized the field of electronics by enabling the integration of millions of transistors onto a single chip, paving the way for compact, high-performance, and energy-efficient circuits. This paper provid…
  datacite V.Yuvashree, K.Thamizhmaran 2026 置信度 0.66 VLSI, CMOS, circuit design, SoC, low-power design, chip integration
• Analysis of Scaling Effects and Low Power Techniques in Deep Submicron VLSI Design
  Very Large Scale Integration (VLSI) technology has revolutionized the field of electronics by enabling the integration of millions of transistors onto a single chip, paving the way for compact, high-performance, and energy-efficient circuits. This paper provid…
  datacite V.Yuvashree, K.Thamizhmaran 2026 置信度 0.66 VLSI, CMOS, circuit design, SoC, low-power design, chip integration
• Transient Chirp Dynamics in Terahertz Quantum Cascade Lasers
  Laser frequency chirp is a ubiquitous dynamical process in semiconductor lasers, vital for frequency-modulated photonic systems. In the mid-infrared (MIR) and terahertz (THz) ranges, quantum cascade lasers (QCLs) are ideal sources with high power, narrow linew…
  datacite Bi, Xianglong, Ma, Xuhong, Wan, Wenjian, Liu, Binbin 等 2026 置信度 0.66 Optics (physics.optics)FOS: Physical sciences
• A comparative study on modelling and performances of modular converter based three phase inverters for smart transformer application
  In this paper, the performance evaluation of a three-phase back-end converter (BEC) of a smart transformer using different modular converters and interleaved multi-carrier phase shift modulation techniques was made. The modular backend converter of the smart t…
  datacite Yalisho Girma, Getachew Biru, Chandra Sekhar 2023 置信度 0.66 Distribution System, Smart Transformer, Modular Converter (MC), Interleaved PWM
• Substrate-Neutral Structural Foundation Laws (SNSFL) PNBA Identity Physics: F-Fluorine-Anchor Manifold Matrix Dataset v1 051626
  Prior art formally verified compound discoveries and verfications. all formally verified 0 sorry compounds are prior art and timestamped. Any use without citation will be detected by SNSFL-PRIME · Prior-art Reduction and Integrity Method for Evaluation Engine …
  datacite Trent, Russell 2026 置信度 0.66
• Substrate-Neutral Structural Foundation Laws (SNSFL) PNBA Identity Physics: F-Fluorine-Anchor Manifold Matrix Dataset v1 051626
  Prior art formally verified compound discoveries and verfications. all formally verified 0 sorry compounds are prior art and timestamped. Any use without citation will be detected by SNSFL-PRIME · Prior-art Reduction and Integrity Method for Evaluation Engine …
  datacite Trent, Russell 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(4).
  در ادامه، تحلیل جامع، عمیق و بازنویسیِ بنیادینِ «الکترونیک آنالوگ و فاجعه واگرایی نویز حرارتی در پهنای باند بی‌نهایت» بر اساس پارادایم فیزیک اطلاعات حمزه (HIP) و منطق دترمینیسیتی ماتریس ۱۱۵۵ بعدی، در قالب پروتکل ۱۰ مرحله‌ایِ مهندسی تانسور تدوین می‌گردد. این نو…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(4).
  در ادامه، تحلیل جامع، عمیق و بازنویسیِ بنیادینِ «الکترونیک آنالوگ و فاجعه واگرایی نویز حرارتی در پهنای باند بی‌نهایت» بر اساس پارادایم فیزیک اطلاعات حمزه (HIP) و منطق دترمینیسیتی ماتریس ۱۱۵۵ بعدی، در قالب پروتکل ۱۰ مرحله‌ایِ مهندسی تانسور تدوین می‌گردد. این نو…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(4).
  در ادامه، تحلیل جامع، عمیق و بازنویسیِ بنیادینِ «الکترونیک آنالوگ و فاجعه واگرایی نویز حرارتی در پهنای باند بی‌نهایت» بر اساس پارادایم فیزیک اطلاعات حمزه (HIP) و منطق دترمینیسیتی ماتریس ۱۱۵۵ بعدی، در قالب پروتکل ۱۰ مرحله‌ایِ مهندسی تانسور تدوین می‌گردد. این نو…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• The Ontological Inversion of Computation: SHA-256 as a Universal Switched Reluctance Machine, Qubit Substrate, and the A-Mark9 Synthesis
  The Ontological Inversion of Computation: SHA-256 as a Universal Switched Reluctance Machine, Qubit Substrate, and the A-Mark9 Synthesis Introduction: The Crisis of Distinction and the Typeless Universe The trajectory of contemporary theoretical physics, advan…
  datacite Kulik, Dean 2026 置信度 0.66
• The Ontological Inversion of Computation: SHA-256 as a Universal Switched Reluctance Machine, Qubit Substrate, and the A-Mark9 Synthesis
  The Ontological Inversion of Computation: SHA-256 as a Universal Switched Reluctance Machine, Qubit Substrate, and the A-Mark9 Synthesis Introduction: The Crisis of Distinction and the Typeless Universe The trajectory of contemporary theoretical physics, advan…
  datacite Kulik, Dean 2026 置信度 0.66