半导体与先进封装 · 全部实体（第 62 / 100 页）

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• Tensorial Tunnelling: Unlike Quantum Tunnelling, a Physical Barrier is not an Obstacle but rather a Folding Point within Higher Dimensions, and the Passage of a Particle (or Data) is not a Random Phenomenon but a Deterministic Geometrical Journey.
  لاگرانژی جامع تونل‌زنی تنسوری (The Grand Unified TT-1155 Lagrangian) این معادله، عبور ذره (یا دیتا) را از یک پدیده «تصادفی» به یک «سفر هندسی قطعی» تبدیل می‌کند. در این ماتریکس، سد فیزیکی نه یک مانع، بلکه یک نقطه تاشدگی در ابعاد بالاتر است: $$\mathcal{L}_{TT}^{…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Tensorial Tunnelling: Unlike Quantum Tunnelling, a Physical Barrier is not an Obstacle but rather a Folding Point within Higher Dimensions, and the Passage of a Particle (or Data) is not a Random Phenomenon but a Deterministic Geometrical Journey.
  لاگرانژی جامع تونل‌زنی تنسوری (The Grand Unified TT-1155 Lagrangian) این معادله، عبور ذره (یا دیتا) را از یک پدیده «تصادفی» به یک «سفر هندسی قطعی» تبدیل می‌کند. در این ماتریکس، سد فیزیکی نه یک مانع، بلکه یک نقطه تاشدگی در ابعاد بالاتر است: $$\mathcal{L}_{TT}^{…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• DESIGN AND PERFORMANCE EVALUATION OF LOW VOLTAGE COMPARATOR USING 14nm FinFET TECHNOLOGY FOR HIGH-SPEED DIGITAL APPLICATIONS
  The continued scaling of complementary metal-oxide-semiconductor (CMOS) technology into the nanometre regime has exposed comparator circuits to severe short-channel effects, elevated leakage current and degraded switching speed, all of which limit their useful…
  datacite Mamindlapally Divyalatha, Vemula Sabitha 2026 置信度 0.66
• DESIGN AND PERFORMANCE EVALUATION OF LOW VOLTAGE COMPARATOR USING 14nm FinFET TECHNOLOGY FOR HIGH-SPEED DIGITAL APPLICATIONS
  The continued scaling of complementary metal-oxide-semiconductor (CMOS) technology into the nanometre regime has exposed comparator circuits to severe short-channel effects, elevated leakage current and degraded switching speed, all of which limit their useful…
  datacite Mamindlapally Divyalatha, Vemula Sabitha 2026 置信度 0.66
• Optimal biasing of SiGe differential pair for cryogenic low-Flicker noise amplification
  The Cryogenic Low Noise Amplifier (LNA) is a fundamental component of the cryogenic detection chain. Because cryogenic detectors, such as superconducting transition-edge sensors (TES) read out by SQUIDs are ultra-sensitive, their front-end amplification must b…
  datacite TON, Bao, PRÊLE, Damien, MESQUIDA, Jean, GONZALEZ, Manuel 等 2026 置信度 0.66
• Optimal biasing of SiGe differential pair for cryogenic low-Flicker noise amplification
  The Cryogenic Low Noise Amplifier (LNA) is a fundamental component of the cryogenic detection chain. Because cryogenic detectors, such as superconducting transition-edge sensors (TES) read out by SQUIDs are ultra-sensitive, their front-end amplification must b…
  datacite TON, Bao, PRÊLE, Damien, MESQUIDA, Jean, GONZALEZ, Manuel 等 2026 置信度 0.66
• Towards a Femtosecond-Coherent Compute Architecture: Optical Baseclock Distribution with Local Pulse Amplification for the Elimination of Clock-Domain Synchronisation Overhead
  We propose a three-layer architecture in which local pulse amplifiers at compute-cluster boundaries enable an optically broadcast femtosecond baseclock across heterogeneous compute systems, structurally eliminating inter-domain synchronisation infrastructure. …
  datacite Rempel, Fabio-Eric 2026 置信度 0.66 optical clock distributionlocal pulse amplificationclock-domain crossingheterogeneous computingphotonic interconnect
• Towards a Femtosecond-Coherent Compute Architecture: Optical Baseclock Distribution with Local Pulse Amplification for the Elimination of Clock-Domain Synchronisation Overhead
  We propose a three-layer architecture in which local pulse amplifiers at compute-cluster boundaries enable an optically broadcast femtosecond baseclock across heterogeneous compute systems, structurally eliminating inter-domain synchronisation infrastructure. …
  datacite Rempel, Fabio-Eric 2026 置信度 0.66 optical clock distributionlocal pulse amplificationclock-domain crossingheterogeneous computingphotonic interconnect
• Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications
  Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always been r…
  datacite Pott, Vincent 2007 置信度 0.66 MicroelectronicNanoelectronicNanotechnologySETMOS
• Microwave periodic structures based on MicroElectroMechanical Systems (MEMS) and micromachining techniques
  As a result of the ever growing number of functionalities and standards to be supported by communication systems, as well as the constant development of radar and imaging technologies, a key research area in the field of microwaves and millimeter waves is the …
  datacite Perruisseau-Carrier, Julien 2007 置信度 0.66 MicrowavesMillimeter wavesMicromachiningMicroElectroMechanical Systems (MEMS)Periodic structure
• Advancements in Luminescent Materials
  ABSTRACT: Thin films of colloidal quantum dots (QDs) are promising solar photovoltaic (PV) absorbers in spite of their disordered nature. Disordered PV materials face a power conversion efficiency limit lower than the ideal Shockley−Queisser bound because of i…
  datacite Evelyn W. Lee, Liam F. Jenkins 2016 置信度 0.66 Functional MaterialsAdvanced PhysicsMaterials ScienceOpen Access
• Advancements in Luminescent Materials
  ABSTRACT: Thin films of colloidal quantum dots (QDs) are promising solar photovoltaic (PV) absorbers in spite of their disordered nature. Disordered PV materials face a power conversion efficiency limit lower than the ideal Shockley−Queisser bound because of i…
  datacite Evelyn W. Lee, Liam F. Jenkins 2016 置信度 0.66 Functional MaterialsAdvanced PhysicsMaterials ScienceOpen Access
• The Final Inversion: Ontological Mathematics, the Universal Stack, and the Shadow of Computation within SHA-256
  The Final Inversion: Ontological Mathematics, the Universal Stack, and the Shadow of Computation within SHA-256 The study of computational structures, cryptography, and digital architecture has historically been predicated on a strict, unidirectional hierarchy…
  datacite Kulik, Dean 2026 置信度 0.66
• The Final Inversion: Ontological Mathematics, the Universal Stack, and the Shadow of Computation within SHA-256
  The Final Inversion: Ontological Mathematics, the Universal Stack, and the Shadow of Computation within SHA-256 The study of computational structures, cryptography, and digital architecture has historically been predicated on a strict, unidirectional hierarchy…
  datacite Kulik, Dean 2026 置信度 0.66
• Nanoelectronics and Future Communication Systems
  Nanoelectronics and Future Communication Systems is a comprehensive academic and professional reference book that explores the transformative role of nanoscale technologies in shaping next-generation communication networks and intelligent electronic systems. D…
  datacite Mr. V. Praveen, Dr. Nitin Jain, Mr. P. Rajendran, Mrs. Awantika Chandel 等 2026 置信度 0.66 NanoelectronicsCommunicaton Systems
• Nanoelectronics and Future Communication Systems
  Nanoelectronics and Future Communication Systems is a comprehensive academic and professional reference book that explores the transformative role of nanoscale technologies in shaping next-generation communication networks and intelligent electronic systems. D…
  datacite Mr. V. Praveen, Dr. Nitin Jain, Mr. P. Rajendran, Mrs. Awantika Chandel 等 2026 置信度 0.66 NanoelectronicsCommunicaton Systems
• DEVSIM: A TCAD Semiconductor Device Simulator
  DEVSIM https://devsim.org Version: 2.11.0 This content is also mirrored at https://github.com/devsim/devsim/releases/tag/v2.11.0.rc5
  datacite Juan Sanchez 2026 置信度 0.66 TCADSimulatorDEVSIM
• DEVSIM: A TCAD Semiconductor Device Simulator
  DEVSIM https://devsim.org Version: 2.11.0 This content is also mirrored at https://github.com/devsim/devsim/releases/tag/v2.11.0.rc5
  datacite Juan Sanchez 2026 置信度 0.66 TCADSimulatorDEVSIM
• DEVSIM Manual
  DEVSIM TCAD Semiconductor Device Simulator Documentation
  datacite Sanchez, Juan E. 2026 置信度 0.66 TCADdocumentationsimulator
• DEVSIM Manual
  DEVSIM TCAD Semiconductor Device Simulator Documentation
  datacite Sanchez, Juan E. 2026 置信度 0.66 TCADdocumentationsimulator
• DEVSIM Manual
  DEVSIM TCAD Semiconductor Device Simulator Documentation
  datacite Sanchez, Juan E. 2025 置信度 0.66 TCADdocumentationsimulator
• Long-Range Fire Detection Using a PIN Photodiode-Based Sensor Circuit
  Fire accidents in industries, laboratories, homes, and public areas can cause severe damage to life and property if they are not detected at an early stage. To reduce such risks, an efficient and fast fire detection system is essential. This project presents t…
  datacite Anitha . S, Akshatha . Y, Harshini . M, Priyadharshini . S 等 2026 置信度 0.66
• Long-Range Fire Detection Using a PIN Photodiode-Based Sensor Circuit
  Fire accidents in industries, laboratories, homes, and public areas can cause severe damage to life and property if they are not detected at an early stage. To reduce such risks, an efficient and fast fire detection system is essential. This project presents t…
  datacite Anitha . S, Akshatha . Y, Harshini . M, Priyadharshini . S 等 2026 置信度 0.66
• Pin Photo Diode Based Fire Sensor
  Fire accidents in industries, laboratories, homes, and public areas can cause severe damage to life and property if they are not detected at an early stage. To reduce such risks, an efficient and fast fire detection system is essential. This project presents t…
  datacite Akshatha Y, Harshini M, Priyadharshini S, Subhasri P 等 2026 置信度 0.66
• The Forest as a Biological Semiconductor: planting geometry as programming, resistance wave as clock, and a forest computer solving optimisation problems
  This paper is the fifth in the series on forest bioelectric systems. We propose the concept of a forest as a biological semiconductor device in which planting geometry plays the role of circuit topology. The boundary between two tree species with different bio…
  datacite Bersimenko, Ivan, Bersimenko, Peter 2026 置信度 0.66 biological semiconductor, p-n junction, biological diode, biological transistor, logic elements, planting geometry as programming, clock generator, resistance wave, mycelial memory, Hebbian learning, analogue computation, Star of David, Fibonacci spiral, double spiral, crescent antenna
• The Forest as a Biological Semiconductor: planting geometry as programming, resistance wave as clock, and a forest computer solving optimisation problems
  This paper is the fifth in the series on forest bioelectric systems. We propose the concept of a forest as a biological semiconductor device in which planting geometry plays the role of circuit topology. The boundary between two tree species with different bio…
  datacite Bersimenko, Ivan, Bersimenko, Peter 2026 置信度 0.66 biological semiconductor, p-n junction, biological diode, biological transistor, logic elements, planting geometry as programming, clock generator, resistance wave, mycelial memory, Hebbian learning, analogue computation, Star of David, Fibonacci spiral, double spiral, crescent antenna
• Bridging people, data, and infrared devices: a User's perspective for collaborative research and development using elabFTW
  From designing nanometer-scale semiconductor layer sequences and growing high-quality crystals in ultra-high-vacuum systems to validating materials with diverse characterization tools and fabricating devices in cleanroom environments, each step generates compl…
  datacite BOVKUN, Leonid 2026 置信度 0.66
• Bridging people, data, and infrared devices: a User's perspective for collaborative research and development using elabFTW
  From designing nanometer-scale semiconductor layer sequences and growing high-quality crystals in ultra-high-vacuum systems to validating materials with diverse characterization tools and fabricating devices in cleanroom environments, each step generates compl…
  datacite BOVKUN, Leonid 2026 置信度 0.66
• Emerging Semiconductor Materials for High-Performance Optoelectronic Applications
  Semiconductor materials play a fundamental role in modern optoelectronic technologies by enabling efficient interaction between electrical signals and optical radiation. Their key properties, including band-gap energy, carrier mobility, recombination mechanism…
  datacite Kangude Sahadev H., Pawar Pratik R., Mhaske Mangal K. 2026 置信度 0.66 Optoelectronics, Semiconductor materials, Gallium nitride, Perovskites, Quantum dots, Photodetectors
• The Voltage Dependence of Reverse Current of Semiconductor PN Junctions and its Distribution over the Device Area
  crossref Vasile V.N. Obreja 2008-05-15T10:57:32Z 置信度 0.70
• International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004)
  crossref 2007-09-24T20:30:57Z 置信度 0.70
• Nano-processing using carbon nano tube probes and its device applications
  crossref K. Matsumoto, Y. Gotoh 2002-11-13T18:37:42Z 置信度 0.70
• Optoelectronic Component Reliability and Failure Analysis
  crossref P. Montangero 2012-07-28T20:04:34Z 置信度 0.70
• Supercritical fluid processes for semiconductor device fabrication
  crossref L.B. Rothman, R.J. Robey, M.K. Ali, D.J. Mount 2003-06-25T16:26:17Z 置信度 0.70
• Transferred‐Electron Device
  crossref 2011-06-25T04:00:10Z 置信度 0.70
• Review for "Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform"
  crossref 2023-12-08T16:08:11Z 置信度 0.70
• Polyaniline / single-walled carbon nanotube composite electronic device
  crossref P.C. Ramamurthy, A.M. Malshe, W.R. Harrell, R.V. Grego 等 2004-07-08T16:05:44Z 置信度 0.70
• Soft, curvilinear semiconductor devices for bio-integrated electronics
  crossref J. Rogers 2011-09-21T20:17:53Z 置信度 0.70
• Modeling and Simulation of Narrowband Gap Semiconductor Indium Antimonide (InSb) Based MOSFET
  crossref L. Ma, Y.-W. Jin, C. Zeng, D.W. Barlage 2006-03-10T16:50:57Z 置信度 0.70
• 4337474 Semiconductor device
  crossref Y Yukimoto 2004-11-13T16:59:08Z 置信度 0.70
• Low energy electronics: DARPA portfolio overview
  crossref M. Fritze 2010-01-20T19:20:17Z 置信度 0.70
• Low-Dimensional Semiconductor Structures
  Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical and transport properties, their role in exploring physical phenomena, and…
  crossref 2010-07-01T20:13:59Z 置信度 0.70
• The coming revolution in RF electronics
  crossref Mark Rosker 2008-01-11T20:07:19Z 置信度 0.70
• A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations.
  crossref P. A. Markowich 2017-09-14T17:09:23Z 置信度 0.70
• Decision letter for "An Improved Asymmetrical Multilevel Inverter Topology with Reduced Semiconductor Device Count"
  crossref 2020-11-11T16:01:56Z 置信度 0.70
• High Frequency Equivalent Circuit Models
  crossref Michael J. Howes 2011-10-05T05:14:30Z 置信度 0.70
• Index
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• THE MONTE CARLO METHOD
  crossref 2012-11-20T08:30:31Z 置信度 0.70
• Few-Particle Effects in Semiconductor Macroatoms/Molecules
  crossref F. Troiani, U. Hohenester, E. Molinari 2010-03-04T02:32:36Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• 2011 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  crossref 2011-02-22T17:36:15Z 置信度 0.70
• Principles of Semiconductor Processes and Device Technology
  crossref Zhigang Zang, Qingkai Qian 2026-04-24T21:17:29Z 置信度 0.70
• Growth and uses of metal/semiconductor heterostructures
  crossref Arthur Gossard 2007-02-28T17:29:41Z 置信度 0.70
• Insulator and Heterostructure Field Effect Transistors
  crossref Sandip Tiwari 2013-11-18T21:34:56Z 置信度 0.70
• Introduction to Quantum Modelling
  crossref Robert E. Miles 2011-12-11T09:54:12Z 置信度 0.70
• The 24th International Symposium on Semiconductor Manufacturing
  crossref 2018-06-05T19:01:54Z 置信度 0.70
• Microcavity light sources
  crossref P. Bhattacharya 2002-11-13T23:37:42Z 置信度 0.70
• Terahertz emission using quantum dots and microcavities
  crossref G.S. Solomon 2004-07-08T16:05:44Z 置信度 0.70
• HEMT Modelling
  crossref Michael Shur, Tor A. Fjeldly 2011-12-11T09:54:12Z 置信度 0.70
• Monte Carlo Models and Simulations
  crossref Paulo Lugli 2011-12-11T09:54:12Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• Can an Efficient Metal-Oxide-Semiconductor Device be Made from Aluminium Nitride Ultra-Wide Bandgap Semiconductor?
  crossref 2023-11-05T16:51:37Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-11-13T21:57:54Z 置信度 0.70
• High-performance GaAs metal insulator semiconductor transistor
  crossref P.L. Fleming, A. Meulenberg, H.E. Carlson 2008-01-12T00:52:49Z 置信度 0.70
• Heterostructure Bipolar Transistors
  crossref William Liu 2018-12-16T04:37:31Z 置信度 0.70
• Tin DisulfideAn Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
  crossref 2026-08-18T13:36:22Z 置信度 0.70
• Photodetectors
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Charge transport in materials
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• Challenges in SiC power MOSFET design
  crossref Kevin Matocha 2008-01-11T20:07:19Z 置信度 0.70
• Process and Device Modeling for VLSI Structures
  Accurate and efficient simulation of VLSI processes and device electrical characteristics can complement and in some cases eliminate costly experimental evaluation of proposed new structures. Such techniques are also potentially very useful in optimizing exist…
  crossref JD Plummer 2008-12-04T22:01:38Z 置信度 0.70
• Component Burn-In: The Changing Attitude
  crossref Finn Jensen 2012-07-28T20:04:34Z 置信度 0.70
• Decision letter for "An Improved Asymmetrical Multilevel Inverter Topology with Reduced Semiconductor Device Count"
  crossref 2020-11-11T16:01:56Z 置信度 0.70
• Advanced Optoelectronic Device Processing
  crossref Fengyi Jiang 2017-10-31T08:47:32Z 置信度 0.70
• LEDs for illumination: past, present and future
  crossref C. Bohler 2004-07-08T16:05:44Z 置信度 0.70
• Prospective technological trends in semiconductor device manufacturing
  crossref 2008-12-05T15:22:23Z 置信度 0.70
• Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.
  The two-dimensional(2D) materials are highly promising candidates to realise elegant and efficient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials …
  crossref Varun Bheemireddy 2017-09-15T16:54:19Z 置信度 0.70
• Semiconductor Device Problems
  crossref Ansgar Jüngel 2019-03-20T15:07:45Z 置信度 0.70
• Bias temperature instability in silicon carbide
  crossref D.K. Schroder 2010-01-20T14:20:17Z 置信度 0.70
• Crystallization and Device Shaping
  crossref Karl W. Böer 2011-09-15T19:14:57Z 置信度 0.70
• Field Effect Transistors: MOSFET
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• Compound Semiconductor Device Processing
  Abstract The sections in this article are Introduction Doping Processes Ion Implantation Diffusion Methods Epitaxial Methods Isolation Methods Mesa Etching Ion Implantation Isolation Sidegating and Backgating Diffusion Etching Techniques Wet Etching Dry Etchin…
  crossref John M. Parsey 2013-02-13T11:24:45Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-11-13T21:57:54Z 置信度 0.70
• Emerging memory devices
  crossref H.-S. Philip Wong 2012-01-30T21:47:17Z 置信度 0.70
• Structural Properties of Semiconductors
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• Material and device technologies for III-V semiconductor OEICs
  crossref R. F. LEHENY 2014-12-19T20:14:36Z 置信度 0.70
• Nitride-based UV Geiger-Mode Avalanche Photodiodes
  crossref R.J. Molnar 2006-03-10T11:50:57Z 置信度 0.70
• Review for "Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform"
  crossref 2023-12-08T16:08:11Z 置信度 0.70
• Semiconductor device and lightwave system performance modeling
  crossref A. Lowery 2002-11-22T20:21:11Z 置信度 0.70
• Transistors
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Review for "Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform"
  crossref 2023-12-08T16:08:11Z 置信度 0.70
• Electronic levels in semiconductors
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T10:40:22Z 置信度 0.70
• Strained Si/SiGe technology: status and opportunities
  crossref W. Haensch 2004-07-08T16:05:44Z 置信度 0.70
• Semiconductor device applications of laser processing
  crossref D. Lloyd Crosthwait 2020-02-26T14:46:19Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-12-10T21:37:42Z 置信度 0.70
• Device physics considerations for SOI domino circuit design
  crossref N. Subba, S. Mitra, A. Salman, D.E. Ioannou 2002-11-13T18:37:42Z 置信度 0.70
• A novel SiGe-On-Insulator IMOS device with reduced bias voltages
  crossref Hamed Nematian, Morteza Fathipour, Hassan s. Hajghasem, Farzan Farbiz 2008-01-11T20:07:19Z 置信度 0.70
• Mixed-mode simulation of non-isothermal quantum device operation and full-chip heating
  crossref A. Akturk, L. Parker, N. Goldsman, G. Metze 2004-07-08T16:05:44Z 置信度 0.70
• Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation
  crossref C. Simon, M. Sadkane, S. Mottet 2011-09-16T05:27:02Z 置信度 0.70
• Implementation of Automatic Differentiation to Python-based Semiconductor Device Simulator
  crossref Tsutomu Ikegami, Koichi Fukuda, Junichi Hattori 2019-10-17T22:58:51Z 置信度 0.70
• Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)
  crossref M. Hasanuzzarnan, S.K. Islam, L.M. Tolbert, M.T. Alam 2004-07-08T16:05:44Z 置信度 0.70