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• Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
  crossref 2023-10-24T17:56:57Z 置信度 0.70
• Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
  crossref 2023-11-28T19:20:22Z 置信度 0.70
• Analysis of Temperature Model on Device Characteristics for AlGaN/GaN MODFET for High Power Electronics
  crossref H.F. Huq, M.T. Alam, S.K. Islam 2006-03-10T11:50:57Z 置信度 0.70
• Call for Papers: Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-02-24T18:43:31Z 置信度 0.70
• Addressing challenges in device-circuit modeling for extreme environments of space
  crossref Ashok Raman, Marek Turowski, Alex Fedoseyev, John D. Cressler 2008-01-11T20:07:19Z 置信度 0.70
• Radiation-induced soft errors in advanced semiconductor technologies
  crossref R.C. Baumann 2005-12-10T15:28:23Z 置信度 0.70
• The Wigner Monte Carlo method for accurate semiconductor device simulation
  crossref P. Ellinghaus, M. Nedjalkov, S. Selberherr 2014-11-01T01:19:05Z 置信度 0.70
• 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005)
  crossref 2008-02-06T23:13:50Z 置信度 0.70
• Bipolar power device performance: dependence on materials, lifetime and device ratings
  crossref A. Bhalla, T.P. Chow 2002-12-17T20:47:48Z 置信度 0.70
• Micro and Nanophotonics for Semiconductor Infrared Detectors
  crossref Zoran Jakšić 2014-09-24T23:04:21Z 置信度 0.70
• An impedance transformer with silicon RF MEMS switches
  crossref J. Nithianandam 2004-07-08T20:05:44Z 置信度 0.70
• Integrating Professional Tcad Simulation Tools In Undergraduate Semiconductor Device Courses
  crossref Julie Kenrow 2020-09-03T14:23:24Z 置信度 0.70
• Chemical and Physical Characterization
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Scaling and reliability of deeply scaled SOI CMOS
  crossref D.E. Ioannou 2004-07-08T16:05:44Z 置信度 0.70
• Transistors organiques ultraminces à base de pentacène
  The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated in or…
  datacite Mühlenen, Adrian von 2007 置信度 0.66 Organic semiconductorpentaceneorganic field-effect transistor (OFET)gate interfacesurface modification
• Data from: Direct evaporation of single-crystal metal contacts for 2D semiconductors
  Metal contacts remain one of the key bottlenecks in two-dimensional (2D) semiconductor electronics. We developed an atomic-scale step-by-step evaporation method to directly grow single-crystal metals on monolayer semiconductors with clean interfaces. This meth…
  datacite Zhang, Ying, Liu, Chang, Wang, Huiting, Teng, Guichen 等 2026 置信度 0.66 FOS: Physical sciences2D semiconductorSingle crystalsMetalsContacts
• High Temperature Semiconductor Transistors for Hot DoW Environments and Electronic Warfare
  # High Temperature Semiconductor Transistors for Hot DoW Environments and Electronic Warfare ## Comprehensive Project Description & Technical Volume Overview ### 1. Executive Summary & Program Alignment * This technical proposal and reproducibility fra…
  datacite Michael Aaron Russell 2026 置信度 0.66 CapsuleComputer ScienceTransistorElectronic warfareAdvanced Materials
• Controlled epitaxy of room-temperature quantum emitters in gallium nitride
  The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to leverage existing expert…
  datacite Katie Eggleton 2026 置信度 0.66 EngineeringInformation and computing sciencesPhysical sciences
• Controlled epitaxy of room-temperature quantum emitters in gallium nitride
  The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to leverage existing expert…
  datacite Katie Eggleton 2026 置信度 0.66 EngineeringInformation and computing sciencesPhysical sciences
• Homogeneous MoTe₂ CMOS Inverters Enabled by Work-Function-Engineered van der Waals Contacts
  We demonstrate that homogeneous MoTe 2 complementary metal-oxide-semiconductor (CMOS) inverters can be constructed through a simple work function engineering strategy using van der Waals contacts. Polarity control of MoTe 2 transistors is achieved by employing…
  datacite Shijie Liu, Jie Yu, Boyuan Di, Jintian Li 等 2026 置信度 0.66 Engineering
• Postmodern Physics of Hamzah Information.(196)
  تحلیل بنیادین، بازنویسی تانسوری و اثبات جامعِ کامل پارادوکس دیوار آتش و فروپاشی اصل هم‌ارزی در تبخیر سیاهچاله‌ها (The Firewall Paradox and Equivalence Principle Breakdown in Black Hole Evaporation - معمای شماره ۹۱ از ۱۰۰) در بستر فیزیک اطلاعات حمزه (HIP-1155) …
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Postmodern Physics of Hamzah Information.(196)
  تحلیل بنیادین، بازنویسی تانسوری و اثبات جامعِ کامل پارادوکس دیوار آتش و فروپاشی اصل هم‌ارزی در تبخیر سیاهچاله‌ها (The Firewall Paradox and Equivalence Principle Breakdown in Black Hole Evaporation - معمای شماره ۹۱ از ۱۰۰) در بستر فیزیک اطلاعات حمزه (HIP-1155) …
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.66
• Power Semiconductor Devices and Smart Power IC Technologies CFP
  crossref 2016-07-01T20:08:43Z 置信度 0.70
• A new approach for fabricating horizontally grown semiconductor nanowires (case of zinc oxide)
  crossref B. Nikoobakht, M.D. Vaudin, S.J. Stranick 2006-03-10T11:50:57Z 置信度 0.70
• Power Semiconductor Devices and Smart Power IC Technologies CFP
  crossref 2016-10-06T22:58:39Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• Nano-Crystalline Oxide Semiconductor Materials for Display and Semiconductor Device Applications
  Ever evolving advances in oxide semiconductor materials and devices continue to fuel leading edge developments in display technology, and transparent electronics, thanks to new integration processes, enabling large area processing on rigid and flexible substra…
  crossref Sanghun Jeon 2020-02-27T00:52:39Z 置信度 0.70
• Electron-Phonon Interaction in Semiconductor Quantum Dots
  crossref R. Ferreira, G. Bastard 2010-03-04T07:32:36Z 置信度 0.70
• Power Semiconductor Devices and Smart Power IC Technologies CFP
  crossref 2016-09-13T21:34:58Z 置信度 0.70
• Semiconductor‐Device Modeling
  crossref Toru Toyabe 2007-11-13T16:48:13Z 置信度 0.70
• Closure relations for macroscopic transport models
  crossref T. Grasser 2004-07-08T16:05:44Z 置信度 0.70
• Varactors
  crossref Jan Stake 2010-02-23T15:02:18Z 置信度 0.70
• Author index
  crossref 2015-07-16T14:26:14Z 置信度 0.70
• Metals
  crossref Mike Golio 2010-02-23T15:02:18Z 置信度 0.70
• Junction Temperature Extraction of the Power Semiconductor Device
  crossref Xiong Du, Jun Zhang, Gaoxian Li, Yaoyi Yu 等 2022-07-08T12:05:31Z 置信度 0.70
• Study of work-function variation in stacked multiple-channel-structure device
  Abstract For stacked multiple-channel-structure devices such as stacked nanowire FETs (stacked NWFETs), work-function variation induced (WFV-induced) threshold voltage ( V T ) variation is quantitatively investigated using a three-dimensional technology comput…
  crossref Jaesoo Park, Changhwan Shin 2019-10-07T18:45:11Z 置信度 0.70
• Chapter 5. DEVICE APPLICATIONS OF SUPERLATTICE STRUCTURES
  crossref 2024-09-06T22:01:26Z 置信度 0.70
• Semiconductor Device Modelling
  crossref K. Board 2009-03-17T16:34:26Z 置信度 0.70
• Monte Carlo Modelling Techniques
  crossref Mustafa Al-Mudares 2011-10-05T05:14:30Z 置信度 0.70
• Applications of BioMEMS in Cell-Related Research
  crossref 2011-06-07T13:33:41Z 置信度 0.70
• Review for "An Improved Asymmetrical Multilevel Inverter Topology with Reduced Semiconductor Device Count"
  crossref 2020-11-11T16:01:56Z 置信度 0.70
• Front Matter
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Device Stability and Radiation Hardness
  crossref Gerhard Lutz 2007-06-14T11:03:59Z 置信度 0.70
• Crystal Growth and Device Fabrication
  crossref Koichi Wakita 2011-08-26T08:11:00Z 置信度 0.70
• Semiconductor Device Simulation
  crossref 2010-02-23T15:53:48Z 置信度 0.70
• Carrier Lifetimes
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Measurement methods for the semiconductor device industry :
  crossref W Murray Bullis 2014-05-28T17:38:37Z 置信度 0.70
• Semiconductor Devices
  crossref Emanuele Rimini 2012-07-28T23:16:32Z 置信度 0.70
• Nano CMOS Device Quantum Simulation
  crossref 2011-06-20T08:02:48Z 置信度 0.70
• Semiconductor Macroatoms
  crossref Fausto Rossi 2012-07-18T18:47:22Z 置信度 0.70
• Abstract not available at time of publishing
  crossref 2011-06-07T14:29:35Z 置信度 0.70
• Semiconductors
  crossref Mike Harris 2010-02-23T15:02:18Z 置信度 0.70
• Theoretical Investigation of Device Aspects of Semiconductor Superlattices.
  crossref G. H. Doehler 2017-09-14T16:55:20Z 置信度 0.70
• One-Dimensional Semiconductor Nanostructures: Growth, Characterization and Device Applications
  crossref Sanjay Mathur, Sven Barth 2017-03-30T14:47:58Z 置信度 0.70
• Doping and semiconductor characterizations
  crossref 2018-06-22T23:40:20Z 置信度 0.70
• Hybrid WDM - OTDM technologies using semiconductor optical amplifiers for networking, instrumentation and signal processing
  crossref P.J. Delfyett 2002-11-13T18:37:42Z 置信度 0.70
• 2006 International Conference on Simulation of Semiconductor Process and Devices
  crossref 2008-02-06T23:13:50Z 置信度 0.70
• Optical Characterization
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Semiconductor structures for repeated velocity overshoot
  crossref J.A. Cooper, F. Capasso, K.K. Thornber 2008-01-12T00:52:49Z 置信度 0.70
• Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation
  crossref Long Liang Cui 2017-08-25T19:15:50Z 置信度 0.70
• Basics of Semiconductor Devices
  crossref 2016-03-02T06:41:47Z 置信度 0.70
• TFT Technology for Large Area Electronics
  crossref R. Reuss 2006-03-10T11:50:57Z 置信度 0.70
• Plasma wave electronics devices
  crossref V. Ryzhii, M.S. Shur 2004-07-08T16:05:44Z 置信度 0.70
• Semiconductor‐Device Integration
  crossref Hideo Sunami 2007-11-13T21:48:13Z 置信度 0.70
• Large-Signal Models
  crossref Robert J. Trew 2011-12-11T09:54:12Z 置信度 0.70
• Device Reliability
  crossref HENRY KRESSEL, J.K. BUTLER 2012-12-03T05:35:55Z 置信度 0.70
• Semiconductor Lasers with New Device Concepts
  crossref Weihua Guo 2017-12-20T15:49:15Z 置信度 0.70
• A new spin on electronics - spintronics
  crossref S.A. Wolf 2004-07-08T16:05:44Z 置信度 0.70
• Classical and Semiclassical Models
  crossref Christopher M. Snowden 2011-10-05T05:14:30Z 置信度 0.70
• Heat and Temperature in Micromechanical Systems
  crossref J.J. Talghader 2006-03-10T11:50:57Z 置信度 0.70
• Modeling of Electron-Hole Scattering in Semiconductor Power Device Simulation
  crossref E. Velmre, A. Koel, F. Masszi 2011-09-16T01:27:02Z 置信度 0.70
• Review for "An Improved Asymmetrical Multilevel Inverter Topology with Reduced Semiconductor Device Count"
  crossref 2020-11-11T16:01:56Z 置信度 0.70
• Hot Carrier and Tunneling Structures
  crossref Sandip Tiwari 2013-11-18T21:35:04Z 置信度 0.70
• Bipolar Junction Transistors
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• List of Contributors
  crossref 2026-06-21T13:19:31Z 置信度 0.70
• An Efficient Inclusion of Self-Heating and Quantum Effects in SOI Device Simulations
  crossref A. Akturk, N. Goldsman, G. Metze 2006-03-10T16:50:57Z 置信度 0.70
• Field Effect Transistors
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• Applications of Picosecond Laser Acoustics to Power Semiconductor Device: IGBT and MOSFET
  crossref Johnny Dai, Cheolkyu Kim, Priya Mukundhan 2023-08-22T17:36:50Z 置信度 0.70
• 7th ECS International Semiconductor Technology Conference
  crossref 2007-11-08T00:21:50Z 置信度 0.70
• The 34th INternational Symposium on Power Semiconductor Devices and ICs
  crossref 2021-09-27T21:17:34Z 置信度 0.70
• 2018 BiCMOS and COumpound Semiconductor INtegrated Circuits and Technology Sypmposium
  crossref 2018-09-07T18:52:30Z 置信度 0.70
• Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers
  crossref E.J. Flynn 2002-11-19T14:49:16Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• 2018 BiCMOS and COumpound Semiconductor INtegrated Circuits and Technology Sypmposium
  crossref 2018-06-01T18:49:35Z 置信度 0.70
• 40th IEEE Semiconductor Interface Specialists Conference
  crossref 2009-06-02T21:16:00Z 置信度 0.70
• Physical Models for Silicon VLSI
  crossref Siegfried Selberherr 2011-10-05T05:14:30Z 置信度 0.70
• Forms of Contamination Affecting Device Processing
  Semiconductor devices are known for their sensitivity to particulate contamination during manufacture. This sensitivity is increasing as device features shrink and circuit densities increase. Current VLSI (Very Large Scale Integration) devices are also sensiti…
  crossref AC Rapa 2008-12-04T22:01:38Z 置信度 0.70
• Monte Carlo Simulation of Semiconductor Devices
  crossref Carlo Jacoboni, Paolo Lugli 2011-09-28T00:51:46Z 置信度 0.70
• Comparison of Hydrodynamic Formulations for Non-Parabolic Semiconductor Device Simulations
  crossref Arlynn W. Smith, Kevin F. Brennan 2011-08-23T22:45:08Z 置信度 0.70
• (Invited) Nano-Crystalline Oxide Semiconductor Materials for Display and Semiconductor Device Applications
  Nano-crystalline oxide semiconductor devices offer an attractive alternative to the traditional display technology, enabling to realize high resolution, high motion speed and large area interactive display products with remote touch functionality and transpare…
  crossref Sanghun Jeon 2014-09-30T16:43:23Z 置信度 0.70
• A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications
  crossref Ce Li, J.S. Duster, K.T. Kornegay 2003-05-02T18:30:27Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2013-11-13T21:57:54Z 置信度 0.70
• Discrete impurity and mobility in drift-diffusion simulations for device characteristics variability
  crossref T. Karasawa, K. Nakanishi, N. Sano 2010-01-20T19:20:17Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2015-06-10T00:10:57Z 置信度 0.70
• Effect of polySi/high-K interfce on device reliability
  crossref X.W. Wang, H.M. Bo, T.P. Ma, H. Tseng 等 2004-07-08T20:05:44Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-11-13T16:57:54Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2013-11-13T16:57:54Z 置信度 0.70
• Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation
  crossref S. Wagner, T. Grasser, S. Selberherr 2011-05-30T00:25:56Z 置信度 0.70
• Ultrafast Coherent Spectroscopy of Single Semiconductor Quantum Dots
  crossref Christoph Lienau, Jeremy J. Baumberg 2010-03-04T07:32:36Z 置信度 0.70
• Functionalized organic semiconductor-based field-effect transistors for phosphonate vapor detection
  crossref Jia Huang, Joseph Miragliotta, Alan Becknell, Howard E. Katz 2008-01-11T20:07:19Z 置信度 0.70