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• Rapid early battery depletion and lead-electrode corrosion owing to CIED gate oxide semiconductor defects.
  europepmc 2026 置信度 0.80
• Room Temperature Multiferroicity in Bi-Doped ZnO Enabled by Lattice Distortion and Electronic Reconstruction.
  europepmc 2026 置信度 0.80
• Ultra-sensitive mercury sensor based on thin film transistor using flavin self-assembly on monochiral carbon nanotubes.
  europepmc 2026 置信度 0.80
• Lateral Semiconductor-Free-Space Gate Transistors.
  We introduce a novel lateral transistor architecture, the semiconductor-free-space gate transistor (SFGT), in which the conventional solid dielectric is replaced by a semiconductor-free-space gate configuration with sub-100 nm fin channels and dual side gates.…
  pubmed Maciel García GI, Khandelwal V, Mainali G, Dorantes Paulín V 等 2025 置信度 0.82
• Breath-based lung cancer detection using an ML-driven low-cost sensor array.
  europepmc 2025 置信度 0.80
• Schottky-gated transistors using chitosan extracted from marine crab.
  europepmc 2025 置信度 0.80
• Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS<sub>2</sub> Memory Transistor.
  europepmc 2026 置信度 0.80
• Enhancing Biotechnological Applications Using an Optimized Semiconductor Refrigeration Device.
  europepmc 2025 置信度 0.80
• Polycarbazole-SAM Hybrid Interface Engineering for Efficient Hole Extraction in Perovskite Photovoltaic Devices.
  europepmc 2025 置信度 0.80
• Threshold-Voltage Modulation and N<sub>2</sub>O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin-Film Transistors.
  europepmc 2026 置信度 0.80
• Strengthening the Interactions Between Metal and Semiconductor Heterostructures via Microwave Synthesis for Chemiresistor Applications.
  europepmc 2025 置信度 0.80
• Flexible monolithic 3D complementary circuits based on 2D semiconductor inks.
  europepmc 2025 置信度 0.80
• Multifunctional Wearable OLED-OPD System with Wavelength-Tunable Emission for Phototheranostics.
  europepmc 2026 置信度 0.80
• A Cost-Effective Reference-Less Semiconductor Ion Sensor with Anodic Aluminum Oxide Film.
  europepmc 2025 置信度 0.80
• Common-mode control and confinement inversion of electrostatically defined quantum dots in a commercial CMOS process.
  europepmc 2025 置信度 0.80
• High-Gain Ag<sub>2</sub>Te/MoS<sub>2</sub> Hybrid Photodetectors for Short-Wave Infrared Imaging.
  europepmc 2026 置信度 0.80
• Stabilizing Stretchable Organic Transistors Through Small-Molecule Additive Blending for Ultra-Sensitive Pesticide Detection.
  europepmc 2025 置信度 0.80
• A Perspective on Balancing the Costs and Performances of Organic Electronics in 21st Century Academic Research.
  europepmc 2025 置信度 0.80
• High-Resolution Microlens-Assisted Tunable n-Type Optical Doping in Monolayer MoS<sub>2</sub>.
  europepmc 2026 置信度 0.80
• Flexible low-voltage organic transistors with a transit frequency of 40 MHz and an on/off current ratio of 10 orders of magnitude.
  europepmc 2025 置信度 0.80
• Ternary organic solar cells: optimizing the third components.
  europepmc 2026 置信度 0.80
• Feature-Selective Preprocessing with Electrically Robust Boron Nitride-Based Dynamic Memristors for Reliable Lightweight Neural Networks.
  europepmc 2026 置信度 0.80
• Fast Thermal Resistance Distribution Analysis in High-Power VCSEL Array Module.
  europepmc 2025 置信度 0.80
• Sustainable Doping via Molecular Adsorption on Thin-Film Semiconductor Bi<sub>2</sub>O<sub>2</sub>Se.
  europepmc 2025 置信度 0.80
• Investigation of TID-induced capacitance variation in GaAs edge-lift capacitors and its effect on RF impedance matching.
  europepmc 2026 置信度 0.80
• Redesigning EWOD Interconnections: Inkjet-Printed PEDOT:PSS Electrodes with Enhanced Pad Access.
  europepmc 2026 置信度 0.80
• Intrinsic nanofilament pathways in molecular crystals enable energy-efficient and reliable memristors.
  europepmc 2025 置信度 0.80
• Highly Photosensitive Colloidal Quantum Well Based Nanocrystal Skins Assisted by Orientation Control.
  europepmc 2025 置信度 0.80
• Effects of trap sites on magnetic-field dependent electric conductance and recombination of carriers photogenerated in a dye-doped organic semiconductor film device.
  europepmc 2025 置信度 0.80
• Improving the Performance of Ultrathin ZnO TFTs Using High-Pressure Hydrogen Annealing.
  europepmc 2025 置信度 0.80
• A Fully Si-Compatible Ni/Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>/<i>p</i> <sup>+</sup> Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications.
  europepmc 2025 置信度 0.80
• Temperature-Dependent Atomic Layer Deposition of Passivating ZnO Nanolayers for Dye-Sensitized Solar Cells.
  europepmc 2025 置信度 0.80
• Formation of few-electron triple quantum dots in ZnO heterostructures.
  europepmc 2025 置信度 0.80
• Re-Evaluating the Impact of Stacked Electrodes in Metal-Semiconductor Contacts Based on a-IGO Thin-Film Transistors.
  europepmc 2025 置信度 0.80
• Highly-Conductive and Micro-Structured Transparent Glass Substrates for Efficient and Scalable Photoelectrochemical Applications.
  europepmc 2026 置信度 0.80
• Scalable Graphene-MoS<sub>2</sub> Lateral Contacts for High-Performance 2D Electronics.
  europepmc 2025 置信度 0.80
• Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits.
  Gallium Nitride (GaN) fabricated on an insulated sapphire substrate achieves a higher rated voltage of monolithic power integrated circuits compared to that fabricated on a conductive silicon substrate. In this paper, the effectiveness of isolation approaches …
  pubmed Li S, Zhang H, Ma Y, Wang Q 等 2025 置信度 0.82
• Photonic and Optoelectronic Devices and Systems, Third Edition.
  europepmc 2025 置信度 0.80
• The Origin of Efficiency in III-Nitride Micro-Light-Emitting Diodes.
  europepmc 2026 置信度 0.80
• Three-Terminal Multifunctional n-MoS<sub>2</sub>/p-GaN Heterojunctions.
  europepmc 2025 置信度 0.80
• Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT.
  europepmc 2025 置信度 0.80
• Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors.
  europepmc 2026 置信度 0.80
• Flexible n-Channel Organic Transistors with Low Contact Resistance.
  europepmc 2026 置信度 0.80
• Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling.
  europepmc 2025 置信度 0.80
• Thermal Operational Stability in Organic Thin Film Transistors: The Critical Role of Interface Composition and Deposition Conditions.
  europepmc 2026 置信度 0.80
• Ga<sub>2</sub>O<sub>3</sub> Optoelectronic Array with Solar-Blind Ultraviolet Perception for Neuron Spatiotemporal Integration and Forgetting-Enabled Neuromorphic Computing.
  Optoelectronic neuromorphic devices capable of perceiving and memorizing light signals are essential for constructing artificial vision systems. While oxide-semiconductor-based optoelectronic devices are valued for their stable performance and mature fabricati…
  pubmed Liu H, Peng Z, Li L, Jiang Y 等 2025 置信度 0.82
• First Demonstration of Hysteresis-Free IGZO/SnO-Based Complementary Circuits and SRAM with Long-Term Reliability Using SU-8 Passivation.
  europepmc 2025 置信度 0.80
• Carbon-Nanotube-Enabled Low-Threshold Laser Lift-Off for Ultra-Thin Polyimide Films.
  europepmc 2026 置信度 0.80
• The Iontronic Quantum Dot.
  europepmc 2026 置信度 0.80
• Multifunctional ferroelectric synaptic memristors based on HfAlO<sub><i>x</i></sub> with enhanced Pavlovian learning and physical reservoir computing systems.
  europepmc 2025 置信度 0.80
• Reply to: Bias-induced electrostatic magnetoresistance in ferromagnet/chiral systems.
  europepmc 2025 置信度 0.80
• Modulating Persistent Photoconductivity through Barrier Engineering for High-performance and Multifunctional Two-dimensional Optoelectronic Devices.
  europepmc 2026 置信度 0.80
• My 15-Year Journey with <i>Nano Letters</i>.
  europepmc 2025 置信度 0.80
• High-Resolution Photolithographic Patterning of Conjugated Polymers via Reversible Molecular Doping.
  europepmc 2025 置信度 0.80
• Two-dimensional magnetic tunnel p-n junctions for low-power electronics.
  europepmc 2025 置信度 0.80
• Advancing 2D CMOS electronics with high-performance p-type transistors.
  europepmc 2025 置信度 0.80
• Advances in High-Voltage Power Electronics Using Ga<sub>2</sub>O<sub>3</sub>-Based HEMT: Modeling.
  Gallium oxide (Ga 2 O 3 ) is a promising ultra-wide-bandgap (UWBG) material with exceptional transport properties, including a large breakdown voltage, making it ideal for high-voltage power device applications. Recently, Ga 2 O 3 has gained significant attent…
  pubmed Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A 等 2025 置信度 0.82
• Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs.
  europepmc 2025 置信度 0.80
• Multi- and All-Acceptor Polymers for High-Performance n-Type Polymer Field Effect Transistors.
  europepmc 2025 置信度 0.80
• Molecular interplay at the PMMA dielectric and C<sub>13</sub>-BTBT semiconductor interface.
  europepmc 2025 置信度 0.80
• Self-powered, broadband Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaAs van der Waals heterojunction photodetector with high polarization sensitivity.
  europepmc 2025 置信度 0.80
• A high-performance solar blind photodetector based on spinel gallium oxide thin film supported by aluminum doping.
  europepmc 2025 置信度 0.80
• Scalable Integration of Lateral van der Waals Heterostructure Arrays via a Self-Aligned Approach.
  europepmc 2025 置信度 0.80
• Patterning of layered semiconductor GeS<sub>2</sub> by laser photooxidation and water immersion.
  europepmc 2025 置信度 0.80
• Gas-Phase Assembly of Semiconductor Nanostructures into Functional Field-Effect Transistors.
  europepmc 2025 置信度 0.80
• Surface as a Part of Semiconductor Device Material System
  crossref 2025-04-24T04:07:42Z 置信度 0.70
• SemE-Chess: A Semiconductor Device Based Educational Chess Game
  This article is a description of a board game on the concept of chess in which the pieces are field-effect transistors. The moves of the transistors are assigned based on their on-state current and power dissipation.
  crossref Rupam Goswami 2025-09-09T11:15:52Z 置信度 0.70
• Essential Semiconductor Laser Device Physics (Second Edition)
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Semiconductor Power Device Screening Technology
  crossref JiaCheng Huo, YuJie Wu, TingTing Lang 2026-01-06T18:34:00Z 置信度 0.70
• Silicon Carbide Power Device Fabrication
  crossref Victor Veliadis 2025-03-25T02:18:10Z 置信度 0.70
• Recent Studies on Device Modeling for Oxide Semiconductor TFTs
  crossref Katsumi Abe 2026-04-15T22:09:41Z 置信度 0.70
• Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  crossref 2025-05-23T17:05:20Z 置信度 0.70
• Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  crossref 2025-04-30T23:25:36Z 置信度 0.70
• Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  crossref 2025-07-01T17:39:31Z 置信度 0.70
• Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications
  crossref 2025-07-25T17:57:16Z 置信度 0.70
• Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing
  crossref 2025-03-27T02:41:05Z 置信度 0.70
• Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing
  crossref 2025-02-26T18:58:00Z 置信度 0.70
• Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing
  crossref 2025-04-30T23:25:36Z 置信度 0.70
• Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing
  crossref 2025-05-23T17:05:20Z 置信度 0.70
• Quantum behavior
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Noise and fluctuations
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Quantized particle number
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Device Modeling of Oxide Semiconductor TFTs: Recent Studies
  crossref Katsumi Abe 2025-08-14T18:34:17Z 置信度 0.70
• Development of UV-NIL resist for semiconductor device manufacturing
  crossref Akihiro Hakamata, Kazuyuki Usuki, Koichi Sato 2025-05-06T00:16:25Z 置信度 0.70
• Single-mode rate equations
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing
  crossref 2025-03-19T19:57:57Z 置信度 0.70
• Future novel memory device fabrication, heterogenous integration and packaging innovations
  crossref Chong Leong Gan, Chen-Yu Huang, Kuan-Neng Chen, Nilesh U. Badwe 等 2024-10-08T17:09:14Z 置信度 0.70
• Semiconductor Device Manufacturing Technologies
  crossref Amal Banerjee 2025-11-20T07:43:49Z 置信度 0.70
• Semiconductor device research in <i>APL Electronic Devices</i>, an Open Access AIP Publishing journal
  crossref Marko J. Tadjer 2025-09-18T15:35:47Z 置信度 0.70
• The Hidden Thread: Water as the Lifeblood of the Semiconductor Age
  crossref Slava Libman 2026-08-04T19:13:17Z 置信度 0.70
• Quantum-Inspired AI Models for Optimizing Semiconductor Device Performance
  crossref 2025-02-10T07:41:22Z 置信度 0.70
• Spontaneous emission and optical gain
  crossref A F J Levi 2025-05-20T10:15:42Z 置信度 0.70
• Effect of Bi and Ce co-doping in garnet-based materials: Impact on microwave device performance
  crossref Jyoti Saini, Monika Sharma, Sheetal Yadav, Bijoy Kumar Kuanr 2025-04-08T12:56:00Z 置信度 0.70
• Electro-Thermal Performance Evaluation of a Pulse-Based Soil Resistivity Measurement Device
  crossref Bojita Adrian, Terlea Andrei, Cimpianu Teodora, Marius Purcar 2025-11-06T18:48:54Z 置信度 0.70
• Light-Programmable IGZO Optoelectronic Memristor for Multifunctional Neuromorphic Computing.
  europepmc 2026 置信度 0.80
• Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;.
  europepmc 2026 置信度 0.80
• Disorder-mediated non-equilibrium photocurrent redistribution enables homeostatic synaptic conditioning in AgBiS&lt;sub&gt;2&lt;/sub&gt; heterostructure.
  europepmc 2026 置信度 0.80
• Fast photo-carrier multiplication by engineered potential trap in MoS&lt;sub&gt;2&lt;/sub&gt;/Ge double junction phototransistor.
  europepmc 2026 置信度 0.80
• Solvent-Mediated Reactivity Control of Lewis-Paired Dopants as a Versatile Strategy for Tunable and Stable Doping of Organic Semiconductors.
  europepmc 2026 置信度 0.80
• CMOS compatible probabilistic computing hardware with cointegrated reconfigurable p-bits and synapse arrays.
  europepmc 2026 置信度 0.80