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• Gate-All-Around Transistors at 3nm: Device Physics, Fabrication Challenges, and Beyond FinFET Scaling
  crossref Aditya Sinha, Nishant Choudhary 2025-09-26T22:22:29Z 置信度 0.70
• Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits
  crossref Shujun Ye, Kikuo Yamabe, Tetsuo Endoh 2021-07-01T19:52:28Z 置信度 0.70
• Design Optimization and Analysis of InGaAs-Based Gate-All-Around (GAA) Junctionless Field-Effect Transistor (JLFET)
  crossref Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee, In Man Kang 2017-08-13T03:02:26Z 置信度 0.70
• Impact of Local High-k Insulator on Drivability and Standby Power of Gate-All-Around Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
  In this paper, we study the impact of a local high- k gate insulator on the drivability and off-current of a gate-all-around (GAA) silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET). The replacement of part of the gate SiO 2 …
  crossref Yasuhisa Omura, Osanori Hayashi, Shunsuke Nakano 2010-04-20T01:57:52Z 置信度 0.70
• Impact of Device Parameters on the Threshold Voltage of Double-Gate, Tri-Gate and Gate-All-Around MOSFETs
  crossref Shankaranand Jha, Santosh Kumar Choudhary 2019-07-25T19:47:28Z 置信度 0.70
• Effect of Various Parameter Variations on Electrical Characteristics of Rectangular Gate All Around Junctionless Transistor
  crossref Manish Kumar Rai, Sanjeev Rai, Abhinav Gupta 2020-10-14T19:03:06Z 置信度 0.70
• Performance Analysis of Junctionless Gate-All-Around Transistor for various Channel Lengths (20 nm,15 nm and 10 nm)
  crossref Manish Kumar Rai, Satyajeet Sahoo, Satya Sri Prabhas Routh, Satyanarayana Karumuri 等 2026-03-02T20:52:26Z 置信度 0.70
• In-silico Investigation of Cyl. Gate all Around (GAA) Tunnel Field Effect Transistor (TFET) Biosensor
  Abstract For some time now, the advancement of low power and high sensitivity biosensors has been the center of attention for in-situ detection and monitoring which form an integral part of portable health monitoring systems. This paper elucidates the design-o…
  crossref Sanjana Tiwari, Arya Dutt, Mayuresh Joshi, Prakhar Nigam 等 2021-07-23T17:10:39Z 置信度 0.70
• Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach
  Gate-all-around silicon nanowire transistor (SNWT) can be considered as the potential candidate for highly scaled devices. This paper mainly discusses a new process integration scheme, which features bulk substrate based, epi-free integration, self-aligned str…
  crossref Ru Huang, Runsheng Wang, Yu Tian, Jing Zhuge 等 2009-07-13T22:26:46Z 置信度 0.70
• SiX2 (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub5 nm Applications
  crossref 2024-05-09T15:50:12Z 置信度 0.70
• A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors
  crossref 2021-07-01T11:48:40Z 置信度 0.70
• Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test
  crossref Guoyan Zhang, Aihua Dong, Nie Liu, Rui Tian 等 2015-03-17T23:14:30Z 置信度 0.70
• Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)
  crossref Jae Hwa Seo, Young Jun Yoon, In Man Kang 2018-04-20T00:37:10Z 置信度 0.70
• From Gate-all-Around to Nanowire MOSFETs
  crossref Jean-Pierre Colinge 2008-05-15T10:57:32Z 置信度 0.70
• Noise in SOI MOSFETs and Gate-All Around Transistors
  crossref B. Iñiguez 2005-08-24T22:14:26Z 置信度 0.70
• All-2D van der Waals Heterostructure-Based Gate-Sensitive Field-Effect Transistor Platform for Ultrasensitive and Selective Hydrogen Sensing
  crossref 2026-03-23T16:21:30Z 置信度 0.70
• Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
  crossref Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick 等 2019-05-24T04:11:10Z 置信度 0.70
• CMOS-compatible gate-all-around silicon nanowire detector
  crossref Maryam Ziaei-Moayyed, Murat Okandan 2012-03-01T11:33:32Z 置信度 0.70
• Tunable Superlinear Gallium Oxide Gate-All-Around Deep-Ultraviolet Phototransistor for Near-Field Imaging
  crossref 2025-09-09T01:00:11Z 置信度 0.70
• Electrostatic Modulation for Enhanced Ion Selectivity in Gate-All-Around Multilayer Stacked Graphene Nanopore
  crossref 2024-09-27T07:22:22Z 置信度 0.70
• Comparative Analysis of Top Gate CNTFET and Gate All Around CNTFET Magnitude Comparator
  crossref Geetha Amrutha Mandalapu, Rupa Kasireddy, Amandeep Singh 2026-01-19T20:51:22Z 置信度 0.70
• Junctionless Gate-All-Around Nanowire FET with Asymmetric Spacer for Continued Scaling
  Abstract In this paper we have performed scaling performance of asymmetric junctionless (JL) SOI nanowire FET at 10 nm gate length ( L G ). To study the device electrical performance various DC metrics like SS, DIBL, I ON / I OFF ratio are performed. Even at 5…
  crossref Bharath Sreenivasulu Vakkalak, Vadthiya Narendar 2021-11-01T17:06:02Z 置信度 0.70
• Analog/RF performance of Hexagonal Gate All Around Nanosheet FET with Spacer Engineering
  The analog/RF performance of gate-all-around nanosheet field-effect transistor (GAA NSFET) with spacer dielectric engineering is investigated using three-dimensional TCAD tool. The analog/RF figures of merit of the proposed GAA NSFET, including the intrinsic g…
  crossref Lakshmana Chandana, Subba Rao Suddapalli 2026-05-11T14:06:32Z 置信度 0.70
• Gate-all-around transistors stack up
  crossref Stuart Thomas 2020-12-11T17:04:57Z 置信度 0.70
• Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain
  crossref Zhaoyi Kang, Liangliang Zhang, Runsheng Wang, Ru Huang 2009-09-03T03:13:48Z 置信度 0.70
• Displacement damage physics in gate-all-around nanosheet field effect transistors
  Introduction All major integrated device manufacturers have introduced Gate All Around Nanosheet Field Effect Transistors (GAA NSFETs) as the next generation technology for CMOS applications. The design of GAA NSFETs is similar to Silicon-On-Insulator (SOI) te…
  crossref 2025-07-22T16:37:26Z 置信度 0.70
• Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis
  crossref Ming-Hung Han, Chun-Yen Chang, Yi-Ruei Jhan, Jia-Jiun Wu 等 2013-01-02T19:00:43Z 置信度 0.70
• An investigation of a suppressed-drain cylindrical gate-all-around retrograde-doped heterospacer steep-density-film tunneling field-effect transistor
  crossref Sanjana Tiwari, Arya Dutt, Mayuresh Joshi, Prakhar Nigam 等 2021-07-05T09:02:55Z 置信度 0.70
• Sub‐20 nm Ferroelectric Junctionless Gate‐All‐Around Metal‐Oxide‐Semiconductor Field‐Effect Transistor for Low‐Power Applications: Switching Performances and Subthreshold Circuit Analysis
  Single‐gate metal‐oxide‐semiconductor field‐effect transistors (MOSFET) suffer from several basic physical and electrical limitations for further scaling in deep nanoscale domains, which are often known as short‐channel and reliability effects. The junctionles…
  crossref Ibrahim Rahmani, Hichem Ferhati, Zohir Dibi, Faycal Djeffal 2025-06-28T03:09:59Z 置信度 0.70
• Study of selective isotropic etching effects of Si1-xGex in gate-all-around nanosheet transistor process
  crossref Qi Yan, Hua Shao, Junjie Li, Zhenzhen Kong 等 2023-05-01T13:26:51Z 置信度 0.70
• Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems
  crossref Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang 等 2016-03-28T21:06:26Z 置信度 0.70
• Simulation study on influence of interface trap position in Sii-xGex Gate-All-Around (GAA) field-effect transistor
  crossref Ryoongbin Lee, Suhyeon Kim, Sangwan Kim, Sihyun Kim 等 2018-04-06T00:22:40Z 置信度 0.70
• Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors
  Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes. However, the drain-current…
  crossref Juan P. Mendez, Coleman Cariker, Michael Titze, Alex A. Belianinov 等 2025-12-09T22:42:37Z 置信度 0.70
• Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with SiO2 and high-k dielectrics
  crossref Nurul Ezaila Alias, Mohammed Adamu Sule, Michael Loong Peng Tan, Afiq Hamzah 等 2020-08-14T20:51:51Z 置信度 0.70
• Mueller matrix spectroscopic ellipsometry based scatterometry simulations of Si and Si/SixGe1-x/Si/SixGe1-x/Si fins for sub-7nm node gate-all-around transistor metrology
  crossref Madhulika Korde, Sonal Dey, Alain Diebold, Nick Keller 2018-03-19T18:13:34Z 置信度 0.70
• Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
  Abstract High‐quality liquid gate‐all‐around (LGAA) silicon nanowire (NW) field‐effect transistor (FET) biosensors are fabricated and studied their properties in 1 m m phosphate‐buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At …
  crossref Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva 等 2024-04-01T03:20:45Z 置信度 0.70
• The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory
  crossref Xingqi Zou, Lei Jin, Dandan Jiang, Yu Zhang 等 2018-02-19T23:37:02Z 置信度 0.70
• Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment
  crossref Wei-Ren Chen, Dun-Bao Ruan, Kuei-Shu Chang-Liao, Hao-Yan Wang 等 2023-07-21T17:21:52Z 置信度 0.70
• Subthreshold Analytical Model of Asymmetric Gate Stack Triple Metal Gate All Around MOSFET (AGSTMGAAFET) for Improved Analog Applications
  Abstract In this paper, we have proposed a 2D analytical model for Asymmetric gate stack triple metal gate MOSFET(AGSTMGAAFET) and performed a comparative analysis with the simulation results obtained using the SILVACO 3D simulation software. Existing devices …
  crossref Arvind Ganesh, Kshitij Goel, Jaskeerat Singh Mayall, Sonam Rewari 2021-04-12T13:54:54Z 置信度 0.70
• Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation
  crossref Hee Bum Roh, Jae Hwa Seo, Young Jun Yoon, Jin-Hyuk Bae 等 2014-11-28T16:15:10Z 置信度 0.70
• Radiation effects in gate-all-around structures
  crossref R.K. Lawrence, J.P. Colinge, H.L. Hughes 2002-12-09T23:24:26Z 置信度 0.70
• Gate‐All‐Around (GAA) Nanowire for Vertical Memory
  crossref 2014-07-26T02:25:36Z 置信度 0.70
• Gate-all-around vertical silicon nanowire (GAA-VSiNW) fets : junction and threshold voltage engineering for optimum performance and scalability
  crossref Weijie Lu 2020-10-28T06:55:20Z 置信度 0.70
• Nanometric gate-all-around transistors on silicon vertical channel : fabrication, characterization, and development of the standard logic gates
  Transistors nanométriques à grille entourante sur canal vertical en silicium : fabrication, caractérisation et développement de portes logiques standards La taille des données et les exigences en matière de fonctionnalité pour l'informatique ne cessent d'augme…
  crossref Abhishek Kumar 2026-04-07T14:30:39Z 置信度 0.70
• Gate-all-around nanosheet transistors go 2D
  crossref Zhihong Chen 2022-12-12T17:06:28Z 置信度 0.70
• Simulation of Different Structured Gate-All-Around Fets for Low-Power Integrated Circuits
  crossref Nathan Totorica, Wei Hu, Feng Li 2023-08-14T12:48:49Z 置信度 0.70
• Simulation Study of Short Channel Effects in New Hemispherical Gate-All-Around (HGAA) MOS Devices
  This work presents a numerical simulation study of short channel effect (SCE) in new hemispherical gate-all-around (HGAA) MOS devices. These new HGAA architectures allow optimizing the gate electrostatic control of simple GAA MOS devices after rounding their c…
  crossref Francis Balestra, Gerard Ghibaudo 2026-05-20T01:23:37Z 置信度 0.70
• Impact of Silicon Body Thickness on the Performance of Gate-all-around Silicon Nanowire Field Effect Transistor
  crossref Richa Gupta, Devi Dass, Rakesh Prasher, Rakesh Vaid 2013-11-27T10:52:40Z 置信度 0.70
• Performance Evaluation and Stability Analysis of Gate-All-Around Junctionless Transistor Based 6T SRAM Memory Cell
  crossref Raj Sambhav, Yogesh Pratap 2025-06-11T00:20:52Z 置信度 0.70
• Enhancing the design and performance of a gate-all-around (GAA) charge plasma nanowire field-effect transistor with the help of the negative-capacitance technique
  crossref Leo Raj Solay, S. Intekhab Amin, Pradeep Kumar, Sunny Anand 2021-11-11T08:02:45Z 置信度 0.70
• Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET
  crossref Dheeraj Sharma, Santosh Kumar Vishvakarma 2013-10-29T23:20:35Z 置信度 0.70
• Selective etching behavior of SiGe via controlled N(III) species with formation of NOCl for the integration of Gate-All-Around transistor
  crossref Kiwon Song, Sangwoo Lim 2026-03-09T09:52:47Z 置信度 0.70
• A Sige Channel Gate-All-Around Transistor Fabricated Using Novel Cyclic Self-Limiting Wet Etching Combined with SI Removal Process
  crossref KaiMin Feng, HaoYan Liu, HuaiZhi Luo, Xi Zhang 等 2025-06-03T17:42:31Z 置信度 0.70
• Capacitance-Voltage Characteristics of Gate-All-Around In_xGa_1-XAs Nanowire Transistor
  Abstract not Available.
  crossref Quazi D. M. Khosru, Saeed Uz Zaman Khan, Md. Shafayat Hossain, Fahim Ur Rahman 等 2020-02-27T00:29:14Z 置信度 0.70
• A Two‐Step Dry Etching Model for Non‐Uniform Etching Profile in Gate‐All‐Around Field‐Effect Transistor Manufacturing
  Abstract The Gate‐All‐Around Field‐Effect Transistor (GAAFET) is proposed as a successor to Fin Field‐Effect Transistor (FinFET) technology to increase channel length and improve the device performance. The GAAFET features a complex multilayer structure, which…
  crossref Ziyi Hu, Junjie Li, Rui Chen, Dashan Shang 等 2024-10-11T04:39:40Z 置信度 0.70
• Simulation Study of the Instability Induced by the Variation of Grain Boundary Width and Trap Density in Gate-All-Around Polysilicon Transistor
  crossref Po-Jui Lin, Yung-Yueh Chiu, Frederick Chen, Riichiro Shirota 2021-02-23T20:49:35Z 置信度 0.70
• Capacitance-Voltage Characteristics of Gate-All-Around In_xGa_1-XAs Nanowire Transistor
  This work demonstrates a self-consistent 2-D numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characteristics of a gate-all-around III-V nanowire transistor with a high mobility In 0.53 Ga 0.47 As channel and …
  crossref Quazi D. M. Khosru, Saeed Uz Zaman Khan, Md. Shafayat Hossain, Fahim Ur Rahman 等 2013-05-02T22:48:31Z 置信度 0.70
• Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate
  crossref Sung-Jin Choi, Dong-Il Moon, Sungho Kim, Jae-Hyuk Ahn 等 2011-04-15T23:56:13Z 置信度 0.70
• Performance Analysis of Negative Capacitance-Based Gate All Around Tunnel Field Effect Transistor
  crossref Shubham Verma, Vimal Kumar Singh Yadav, Sanjeev Rai 2025-10-29T07:24:06Z 置信度 0.70
• An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions
  crossref Y. Yue, J.J. Liou, I. Batarseh 2002-12-23T23:08:12Z 置信度 0.70
• Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor
  crossref Young Jae Kim, Young Jun Yoon, Jae Hwa Seo, Sung Min Lee 等 2014-11-28T17:40:59Z 置信度 0.70
• Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
  crossref Dong Seup LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE 等 2010-05-06T06:03:15Z 置信度 0.70
• Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET
  crossref Amir Hossein Bayani, Daryoosh Dideban, Mojtaba Akbarzadeh, Negin Moezi 2017-02-15T20:50:24Z 置信度 0.70
• High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
  crossref Yumei Yang, Haijun Lou, Xinnan Lin 2018-10-17T19:47:46Z 置信度 0.70
• Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design
  crossref Jhen-Yu Tsai, Hsin-Hui Hu 2015-02-05T14:43:07Z 置信度 0.70
• A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs
  crossref Shankaranand Jha, Santosh Kumar Choudhary 2020-03-25T08:38:34Z 置信度 0.70
• A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
  crossref C. Usha, P. Vimala, T. S. Arun Samuel, M. Karthigai Pandian 2020-04-25T09:02:45Z 置信度 0.70
• The next generation of gate-all-around transistors
  crossref Lishu Wu 2023-07-26T17:40:21Z 置信度 0.70
• Gate-all-around structures for low-power applications
  crossref P. Prabhu Thapaswini 2025-12-17T03:23:51Z 置信度 0.70
• The Heterojunction Gate-All-Around Spintronic Tunnel FET (HG-Spin-TFET): A Pathway to Multifunctional, Ultra-Low-Power Nanoelectronics
  The relentless scaling of conventional CMOS technology is confronting a fundamental power wall, driven by the thermal limits of thermionic emission in MOSFETs. This paper addresses this challenge by proposing a novel device architecture: the Heterojunction Gat…
  crossref Ayush Verma 2025-08-04T01:38:59Z 置信度 0.70
• Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering
  crossref 2024-06-17T16:02:25Z 置信度 0.70
• Dual Material Gate Engineering to Reduce DIBL in Cylindrical Gate All Around Si Nanowire MOSFET for 7-nm Gate Length
  crossref Sanjay, B. Prasad, Anil Vohra 2020-11-02T14:03:08Z 置信度 0.70
• Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor
  In this manuscript, channel area fluctuation (CAF) effects on turn-on voltage ( V on ) and subthreshold swing (SS) in gate-all-around (GAA) nanowire (NW) tunnel field-effect transistor (TFET) with multi-bridge-channel (MBC) have been investigated for the first…
  crossref Seok Jung Kang, Jeong-Uk Park, Kyung Jin Rim, Yoon Kim 等 2020-01-22T04:51:54Z 置信度 0.70
• All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator
  An all-solution processed flexible thin-film transistor based on a PANI/PETA gate/gate insulator exhibited higher mobility than the device with a Si/SiO 2 gate/gate insulator because of large crystalline domains in the transition region.
  crossref Jin-Yong Hong, Dai Gun Yoon, Byung Doo Chin, Sung Hyun Kim 2015-12-09T11:12:45Z 置信度 0.70
• Ballistic Transport in n-type MoTe2 Junctionless Gate-All-Around Nanowire FETs: Temperature-Dependent Performance, CMOS Complementarity, and Benchmarking
  Ballistic-transport simulations of an n-type MoTe2 junctionless gate-all-around (JL-GAA) nanowire FET with 20 nm gate length and 2 nm HfO2 gate dielectric are reported. At 300 K the device achieves ION = 41.58 µA/µm, ION/IOFF = 2.87×10^10, and SSmin = 62.76 mV…
  crossref SANDIP Majumdar 2026-05-12T17:26:28Z 置信度 0.70
• Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance
  crossref Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal 2022-03-26T02:03:51Z 置信度 0.70
• Ge0.95Sn0.05 Gate-All-Around pChannel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub3 nm Nanowire Width
  crossref 2021-07-14T04:00:57Z 置信度 0.70
• Asymmetric Gate Stack Triple Metal Gate All Around MOSFET (AGSTM) for Improved Analog Applications
  crossref Arvind Ganesh, Jaskeerat Singh Mayall, Kshitij Goel, Sonam Rewari 2021-06-21T21:42:07Z 置信度 0.70
• Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
  Abstract This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the chan…
  crossref Dariush Madadi, Saeed Mohammadi 2023-03-10T14:04:24Z 置信度 0.70
• Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications
  crossref Jaya Madan, R. S. Gupta, Rishu Chaujar 2016-10-04T21:21:22Z 置信度 0.70
• Physics based current and capacitance model of short-channel double gate and gate-all-around MOSFETs
  crossref H. Borli, S. Kolberg, T. A. Fjeldly 2010-12-08T09:27:32Z 置信度 0.70
• Design Optimization of InGaAs/GaAsSb-Based <i>P</i>-Type Gate-All-Around Arch-Shaped Tunneling Field-Effect Transistor
  crossref Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho 等 2019-04-26T04:54:46Z 置信度 0.70
• Vertically stacked gate-all-around arrays of SiGe nanowires
  crossref 2006-10-02T15:17:01Z 置信度 0.70
• Modeling and Simulation of Gate Engineered Gate All-Around MOSFET for Bio-Molecule Detection
  crossref B. Padmanaban, S. Sathiyamoorthy, R. Ramesh 2016-11-28T12:09:28Z 置信度 0.70
• Investigation of Gate-all-around p-type Dual Metal Double Gate Silicon Nanotube FET
  crossref A.Josephine Anucia, D. Gracia, D.Jackuline Moni 2022-05-30T19:10:00Z 置信度 0.70
• Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling
  crossref Huimei Zhou, Miaomiao Wang, Ernest Wu 2024-05-16T17:21:48Z 置信度 0.70
• 3-D modeling of fringing gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs
  crossref TaeYoon An, SoYoung Kim 2013-11-01T20:41:09Z 置信度 0.70
• Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application
  crossref Yogesh Pratap, Sachin Kumar, R. S. Gupta, Mridula Gupta 2021-03-31T14:03:02Z 置信度 0.70
• Improved DC Performances of Gate-all-around Si-Nanotube Tunnel FETs Using Gate-Source Overlap
  crossref Avtar Singh, Chandan Kumar Pandey 2021-01-28T12:44:47Z 置信度 0.70
• Random dopant fluctuation in gate-all-around nanowire FET
  crossref Cher Ming Tan, Xiangchen Chen 2016-04-28T20:18:49Z 置信度 0.70
• Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
  crossref Dariush Madadi, Saeed Mohammadi 2024-02-12T09:03:29Z 置信度 0.70
• Corner effects in double-gate/gate-all-around MOSFETs
  crossref Hou Xiao-Yu, Zhou Fa-Long, Huang Ru, Zhang Xing 2007-02-27T09:14:48Z 置信度 0.70
• Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET – A Novel Device Concept for Improved Performance
  crossref Priyanka Pandey, Pooja Puri, Harsupreet Kaur 2018-10-04T18:41:22Z 置信度 0.70
• Precise analytical model for short channel Cylindrical Gate (CylG) Gate-All-Around (GAA) MOSFET
  crossref Dheeraj Sharma, Santosh Kumar Vishvakarma 2012-11-16T04:37:40Z 置信度 0.70
• Lateral gate-all-around (GAA) poly-Si transistors
  crossref P. Kalavade, K.C. Saraswat 2002-11-13T15:00:11Z 置信度 0.70
• Precise Analytical Model for Short-Channel Quadruple-Gate Gate-All-Around MOSFET
  crossref Dheeraj Sharma, Santosh Kumar Vishvakarma 2013-03-08T19:43:15Z 置信度 0.70
• Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
  Abstract The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl 2 solutions. The critical concentration of MgCl 2 so…
  crossref Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva 等 2023-09-23T00:36:48Z 置信度 0.70
• Performance Analysis of Sigma Delta ADC Developed using Electrically Doped GAPSb/InP Gate All Around Tunnel Field Effect Transistor
  crossref Amit Kumar Behera, Chithraja Rajan, Dip Prakash Samajdar, Anil Lodhi 等 2021-08-05T14:02:38Z 置信度 0.70
• Raised S/D gate-all-around CMOS using MILC
  crossref Chunshan Yin, P.C.H. Chan, V.W.C. Chan 2003-06-25T23:45:08Z 置信度 0.70
• Modeling of Quasi-Ballistic Silicon Cylindrical Gate-all-Around MOSFETs
  A compact model for the quasi-ballistic cylindrical gate-all-around MOSFET was developed by supplementing the ballistic framework previously disclosed by us with an original energy quantization model. The ballistic mobility is calculated for both degenerate an…
  crossref P. Vimala 2015-05-06T13:56:35Z 置信度 0.70