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• Electro-Thermal Analysis of Vertically Stacked Gate All Around Nano-sheet Transistor
  crossref Arvind Bisht, Yogendra Pratap Pundir, Pankaj Kumar Pal 2022-12-16T13:22:24Z 置信度 0.70
• Simulation-Based Analysis of AlGaN/GaN Gate All Around Field Effect Transistor (AlGaN/GaN GAA-FET)
  crossref Yogesh Kumar Verma, Varun Mishra, Rohit Gurjar, Rajeev Kumar Chauhan 等 2022-09-03T14:02:42Z 置信度 0.70
• A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
  Abstract This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplici…
  crossref Mu-Shih Yeh, Yung-Chun Wu, Kuan-Cheng Liu, Ming-Hsien Chung 等 2014-11-06T10:03:14Z 置信度 0.70
• Impact of Light Excitation on Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors with Bowtie Antenna
  Abstract Recently it is shown that sensitivity of biosensors can be considerably improved using single trap phenomena resulting in two‐level random telegraph signal (RTS) switching in current. To develop the transistor structure with a predefined trap position…
  crossref Yongqiang Zhang, Kai Li, Nazarii Boichuk, Denys Pustovyi 等 2024-10-24T04:03:01Z 置信度 0.70
• A Gate-All-Around Nanosheet Oxide Semiconductor Transistor by Selective Crystallization of InGaOx for Performance and Reliability Enhancement
  crossref Anlan Chen, Ki-woong Park, Kota Sakai, Sunbin Hwang 等 2025-07-18T17:42:20Z 置信度 0.70
• Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope
  crossref Faraz Najam, Sangsig Kim, Yun Seop Yu 2013-12-09T05:39:35Z 置信度 0.70
• Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)
  crossref Ajay, Rakhi Narang, Manoj Saxena, Mridula Gupta 2018-03-27T09:55:57Z 置信度 0.70
• Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)
  crossref C. Usha, P. Vimala, V.N. Ramakrishnan 2020-12-18T05:52:04Z 置信度 0.70
• A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator
  Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient a…
  crossref Yannan Zhang, Ke Han, and Jiawei Li 2020-02-21T10:49:16Z 置信度 0.70
• Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects
  crossref H. Ferhati, F. Djeffal, T. Bentrcia 2021-01-28T21:48:50Z 置信度 0.70
• Performance Optimization of Cylindrical Gate-All-Around FETs Through Gate Workfunction Engineering
  crossref I. Venkatarameswar Reddy, J. Chinna Babu 2026-03-18T19:37:42Z 置信度 0.70
• Analyses of DC and analog/RF performances for short channel quadruple-gate gate-all-around MOSFET
  crossref Dheeraj Sharma, Santosh Kumar Vishvakarma 2015-06-26T17:54:57Z 置信度 0.70
• Transistor/gate level reliability modeling
  crossref Xu Liu 2019-09-10T22:58:40Z 置信度 0.70
• Development and Analysis of Gate Underlap GaN Gate-All-Around FETs
  crossref Sneha Singh, Priya Devi, Rudra Sankar Dhar 2025-06-11T11:39:42Z 置信度 0.70
• Fabrication of Graphoepitaxial Gate-All-Around Si Circuitry Patterned Nanowire Arrays Using Block Copolymer Assisted Hard Mask Approach
  crossref 2021-05-27T09:48:26Z 置信度 0.70
• Simulation of Different Structured Gate-All-Around FETs at 3 nm Node for Low-Power Integrated Circuits
  <p> This paper compares different types of GAA FET structures at 3 nm technology node using TCAD simulation, including Lateral Nanosheet, Lateral Nanowire, Vertical Nanosheet, and Vertical Nanowire. Single gate and gate stack structures are included in t…
  crossref Nathan Totorica, Wei Hu, Feng Li 2022-09-29T03:11:28Z 置信度 0.70
• A Review of the Gate-All-Around Nanosheet FET Process Opportunities
  In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel geometry on the overall d…
  crossref Sagarika Mukesh, Jingyun Zhang 2022-11-04T03:28:10Z 置信度 0.70
• Simulation of Different Structured Gate-All-Around FETs at 3 nm Node for Low-Power Integrated Circuits
  This paper compares different types of GAA FET structures at 3 nm technology node using TCAD simulation, including Lateral Nanosheet, Lateral Nanowire, Vertical Nanosheet, and Vertical Nanowire. Single gate and gate stack structures are included in the analysi…
  crossref Nathan Totorica, Wei Hu, Feng Li 2022-09-28T23:11:27Z 置信度 0.70
• Performance Analysis and Characterization of Double Gate and Gate All Around MOSFET
  crossref Yusra Siddiqui, Nupur Mittal, Imran Ullah Khan 2022-01-18T22:20:07Z 置信度 0.70
• A High Sensitivity Novel Gas Sensor for Ethanol Sensing Using Gate Stack Junction-less Gate-All-Around (GS-JL-GAA) MOSFET for Industrial Application
  Abstract Gas sensors have gain attention with the technological advancement as they are widely used in industries, health care, agriculture and environmental monitoring. The MOSFET based sensor are the mostly preferred in the sensing application due to their r…
  crossref Abhinav Gupta, Akanksha Gupta, Rishabh Awasthi, Manish Rai 2025-12-01T06:09:09Z 置信度 0.70
• Performance Analysis of Vertical Embedded Gate-Gate All Around FET with Quantum Confinement Effects
  crossref Amit Saini, Vishal Narula, Sangeeta Mangesh 2025-11-27T12:01:39Z 置信度 0.70
• Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET
  crossref Bhavya Kumar, Rishu Chaujar 2021-01-03T14:02:38Z 置信度 0.70
• A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
  crossref K.H. Lee, H.C. Lin, T.Y. Huang 2015-09-18T05:43:25Z 置信度 0.70
• Investigations on the Impact of the Parasitic Bottom Transistor in Gate-All-Around Silicon Nanowire SONOS Memory Cells Fabricated on Bulk Si Substrate
  Gate-all-around (GAA) Si nanowire SONOS memory cells (SNWMs) have been fabricated on Si substrate using fully epi-free compatible CMOS technology. A parasitic bottom SONOS memory (PBM) was formed when the SNWM was fabricated on bulk Si substrate. The impact of…
  crossref Yujie Ai, Ru Huang, Yiqun Wang, Jing Zhuge 等 2009-03-06T23:28:46Z 置信度 0.70
• Investigation of Gate-All-Around and Double-Gate InGaAs Negative-Capacitance FETs considering Quantum Capacitance
  crossref S.H. Lin, S.E. Huang, P. Su 2020-09-01T03:09:34Z 置信度 0.70
• Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
  crossref Jiezhi Chen, Takura Saraya, Kousuke Miyaji, Ken Shimizu 等 2009-01-20T03:23:35Z 置信度 0.70
• TCAD Temperature Analysis of Gate Stack Gate All Around (GS-GAA) FinFET for Improved RF and Wireless Performance
  crossref Bhavya Kumar, Rishu Chaujar 2021-03-09T00:04:55Z 置信度 0.70
• DNA hydrogel to improve solution-gate graphene field effect transistor in all-solid-state
  Abstract The solution-gate graphene field effect transistor (Sg-GFET), as a popular sensing platform, its applications are still hindered by the deficiency in all-solid-state, due to the dependence on liquid-state gate-dielectric. Inspired by DNA hydrogel whic…
  crossref S. Hu, Y. Jia 2021-12-21T15:27:26Z 置信度 0.70
• Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator
  Correction for ‘All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator’ by Jin-Yong Hong et al. , RSC Adv. , 2015, 5 , 105785–105788.
  crossref Jin-Yong Hong, Kyoung-Hwan Shin, Dai Gun Yoon, Byung Doo Chin 等 2019-01-29T07:20:18Z 置信度 0.70
• Scattering Parameter Analysis of Gate Stack Gate All Around (GS-GAA) FinFET at THz for RF Applications
  crossref Bhavya Kumar, Megha Sharma, Rishu Chaujar 2023-01-12T21:37:06Z 置信度 0.70
• Structure Effects in the gate-all-around Silicon Nanowire MOSFETs
  crossref Gengchiau Liang 2008-02-15T15:15:11Z 置信度 0.70
• Analysis of back gate and gate all around CNTFET structure
  crossref M. R. Tambekar, S. R. Nade, A. Gajarushi 2011-05-17T08:59:14Z 置信度 0.70
• Wrapping Carbon Nanotubes in a Gate-All-Around Geometry
  crossref A.D. Franklin 2015-09-18T05:43:25Z 置信度 0.70
• Electrothermal Model Parameters Extraction and Evaluation Based on BSIM-CMG for 7-nm Nanosheet Gate-All-Around Transistor
  crossref Ren-Hua Liu, Si-Qi Yang, Xiao-Jin Li, Ya-Bin Sun 等 2020-12-22T01:01:05Z 置信度 0.70
• The Low-Frequency Noise Behavior of Gate-All-Around Soi Transistors
  crossref E. Simoen, U. Magnusson, C. Claeys, J.P. Colinge 2005-08-24T16:50:14Z 置信度 0.70
• Challenges and future scope of gate-all-around (GAA) transistors
  crossref Shobhit Srivastava, Abhishek Acharya 2023-07-10T01:46:31Z 置信度 0.70
• Analysis of Single Event Transient Impact in Si/Si-Ge Gate-All-Around Nanowire Fet Using Tcad
  crossref Satheesh Kumar S, Rajakumar P S 2024-11-18T20:41:46Z 置信度 0.70
• Electrical performance of III-V gate-all-around nanowire transistors
  The performance of III-V inversion-mode and junctionless nanowire field-effect transistors are investigated using quantum simulations and are compared with those of silicon devices. We show that at ultrascaled dimensions silicon can offer better electrical per…
  crossref Pedram Razavi, Giorgos Fagas 2013-08-09T12:28:45Z 置信度 0.70
• Strain Effectiveness of Gate-all-around Silicon Nanowire n-MOSFET Transistors with Physical Analysis
  Abstract In this paper, we have discussed the effects of uniaxial tensile strain on the performance of gate-all-around (GAA) n-MOSFETs over the core cell SiGe structure are investigated for nanowire (NW) channel down to 5 nm to 10 nm. The strain has shown an i…
  crossref Amit Agarwal, Prashanta Chandra Pradhan, Bibhu Prasad Swain 2021-07-20T12:19:17Z 置信度 0.70
• High Frequency and Noise Model of Gate-All-Around MOSFETs
  crossref B. Nae, A. Lazaro, B. Iniguez 2009-03-19T19:22:54Z 置信度 0.70
• Gate induced drain leakage in nanowire gate all around field effect transistors and methods to reduce GIDL
  crossref Anhao Zhang 2023-11-15T13:00:15Z 置信度 0.70
• Numerical modeling on the optical characteristics of triple material gate stack gate all-around (TMGSGAA) MOSFET
  crossref R. Ramesh, M. Madheswaran, K. Kannan 2015-06-11T05:06:07Z 置信度 0.70
• Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime
  crossref Asmita Menaria, Rahul Pandey 2020-12-24T09:53:34Z 置信度 0.70
• Hot-carrier reliability on the optical characteristics of gate stack gate all-around (GSGAA) MOSFET considering quantum mechanical effects
  crossref M. Madheswaran, R. Ramesh, K. Kannan 2015-12-17T21:37:06Z 置信度 0.70
• Effect of Gate Bias on Graphene Channel of G⁴-FET and Gate-All-Around MOSFET
  crossref Md. Rakibul Alam, Hamidur Rahman 2019-03-01T03:03:24Z 置信度 0.70
• Quantization effects in gate-all-around nanowire MOSFETs: A numerical study
  crossref Salah Gamal, Dalia Selim 2010-06-29T11:56:35Z 置信度 0.70
• Gate Dielectric Engineering in p‐Type WSe ₂ Junctionless Gate‐All‐Around MOSFET
  Gate dielectric engineering is investigated in a p‐type WSe 2 junctionless gate‐all‐around (JL‐GAA) MOSFET (3 nm diameter, 2 nm oxide) using the FETtoy 2.0 simulator. Three high‐ κ dielectrics—Al 2 O 3 ( κ = 9), HfO 2 ( κ = 22), and ZrO 2 ( κ = 25)—are compare…
  crossref Sandip Majumdar 2026-08-14T04:44:48Z 置信度 0.70
• Modeling of gate leakage in cylindrical gate-all-around transistors
  crossref Ravi Solanki, Saniya Minase, Ashutosh Mahajan, Rajendra Patrikar 2021-08-30T19:02:35Z 置信度 0.70
• TCAD Analysis and Modelling of Gate-Stack Gate All Around Junctionless Silicon NWFET Based Bio-Sensor for Biomedical Application
  crossref Mekonnen Getnet Yirak, Rishu Chaujar 2020-08-28T20:29:48Z 置信度 0.70
• Investigation of Dual-Material Double Gate Junctionless Accumulation-Mode Cylindrical Gate All Around (DMDG-JLAM-CGAA) MOSFET with High-k Gate Stack for low Power Digital Applications
  crossref Sumedha Gupta, Neeta Pandey, R S Gupta 2021-02-09T01:24:44Z 置信度 0.70
• Highly Efficient Gate Controllability of Rashba Spin-orbit Interaction in a Gate-all-around InAs Nanowire MOSFET
  crossref Keiko Takase, Guoqiang Zhang, Kouta Tateno, Satoshi Sasaki 2023-07-31T22:12:30Z 置信度 0.70
• (Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics
  This work reports a comprehensive evaluation of lateral gate-all-around (GAA) nanowire (NW) FETs vs. triple-gate finFETs, with both types of devices built with various doping schemes, and with GAA-NWFETs outperforming others per footprint. Optimized junctionle…
  crossref Anabela Veloso, Moon Ju Cho, Eddy Simoen, Geert Hellings 等 2016-05-20T09:56:42Z 置信度 0.70
• Temperature Associated Reliability Issues of Heterogeneous Gate Dielectric—Gate All Around—Tunnel FET
  crossref Jaya Madan, Rishu Chaujar 2017-01-09T19:13:35Z 置信度 0.70
• Quantum Dot Gate Field-Effect Transistor: Device Structures
  crossref Supriya Karmakar 2013-11-20T10:17:51Z 置信度 0.70
• Impact of high‐<i>κ</i>gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
  Abstract High‐ κ gate‐all‐around structure counters the Short Channel Effect (SCEs) mostly providing excellent off‐state performance, whereas high mobility III–V channel ensures better on‐state performance, rendering III–V nanowire GAAFET a potential candidate…
  crossref Saeed Uz Zaman Khan, Md. Shafayat Hossain, Fahim Ur Rahman, Rifat Zaman 等 2014-09-08T06:42:57Z 置信度 0.70
• Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier
  This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual…
  crossref Sarabdeep Singh, Leo Raj Solay, Sunny Anand, Naveen Kumar 等 2023-06-30T16:08:32Z 置信度 0.70
• (Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics
  Triple-gate finFET manufacturing implementation has been successfully enabling continuance of CMOS scaling and Moore’s law [1], but it faces increased scaling challenges for sub-10nm nodes. Gate-all-around (GAA) nanowire (NW) FETs with the thin-body of the dev…
  crossref Anabela Veloso, Moon Ju Cho, Eddy Simoen, Geert Hellings 等 2020-02-27T01:15:15Z 置信度 0.70
• Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation
  A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation. Channel potential of GAAB shows a gradual s…
  crossref Jae-Min Sim, Bong-Seok Kim, In-Ho Nam, Yun-Heub Song 2021-07-30T12:59:24Z 置信度 0.70
• Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
  crossref Huimei Zhou, Miaomiao Wang, Nicolas Loubet, Andrew Gaul 等 2023-05-15T17:50:57Z 置信度 0.70
• Analysis of screening effects in multiple-gate and gate-all-around Si NW array FETs
  crossref Ghader Darbandy, Sven Mothes, Michael SchrOter, Martin Claus 2017-11-02T17:11:00Z 置信度 0.70
• Precise Modeling Framework for Short-Channel Double-Gate and Gate-All-Around MOSFETs
  crossref H. Borli, S. Kolberg, T.A. Fjeldly, B. Iniguez 2008-09-26T14:55:11Z 置信度 0.70
• Calretinin-expressing islet cells: a source of pre- and post-synaptic inhibition of non-peptidergic nociceptor input to the mouse spinal cord
  ABSTRACT Unmyelinated non-peptidergic nociceptors (NP afferents) arborise in lamina II of the spinal cord and receive GABAergic axoaxonic synapses, which mediate presynaptic inhibition. However, until now the source of this axoaxonic synaptic input was not kno…
  preprints 2023 置信度 0.74
• Designed allosteric protein logic
  SUMMARY Regulation of the activity of proteins enables control of complex cellular processes. Allosteric regulation has been introduced individually into few natural proteins. Here, we present a generally applicable regulation of diverse proteins called INSRTR…
  preprints 2022 置信度 0.74
• Automated 3D multi-color single-molecule localization microscopy
  Since its inception, single molecule localization microscopy (SMLM) has enabled imaging scientists to visualize biological structures with unprecedented resolution. Particularly powerful implementations capable of 3D, multi-color and high-throughput imaging ha…
  preprints 2023 置信度 0.74
• Current Trends of SARS-CoV-2 and its New Variants Diagnostics in Different Body Fluids: Surface Antigen, Antibody, Nucleic Acid, and RNA Sequencing Detection Techniques
  preprints 2022 置信度 0.74
• AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection.
  europepmc 2026 置信度 0.80
• High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs.
  europepmc 2025 置信度 0.80
• Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS&lt;sub&gt;2&lt;/sub&gt; Nanosheet Field-Effect Transistors for Area-Efficient Integrated Circuit.
  europepmc 2025 置信度 0.80
• Bioinspired phototransistor with tunable sensitivity for low-contrast target detection.
  europepmc 2026 置信度 0.80
• Effects of Carrier Trapping and Noise in Triangular-Shaped GaN Nanowire Wrap-Gate Transistor.
  europepmc 2025 置信度 0.80
• A Portable Extended-Gate FET Integrated Sensing System with Low-Noise Current Readout for On-Site Detection of &lt;i&gt;Escherichia coli&lt;/i&gt; O157:H7.
  europepmc 2026 置信度 0.80
• Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects.
  europepmc 2025 置信度 0.80
• Ionomer-Based Ion-Sensitive Field-Effect Transistor for Lithium Ion Sensing.
  europepmc 2025 置信度 0.80
• Rapid Self-Driven Formation of Conducting Polymers for Bioelectronics.
  europepmc 2026 置信度 0.80
• Low-Power Ionically Tunable Bilayer MoS&lt;sub&gt;2&lt;/sub&gt; Synaptic Transistors.
  europepmc 2025 置信度 0.80
• Highly Improved Sensitivity of FET Sensors Based on a Pulsed Temperature Profile for Lead Ion Detection.
  europepmc 2026 置信度 0.80
• Mechanistic explanation of neuroplasticity using equivalent circuits.
  europepmc 2026 置信度 0.80
• Practical Applications of 2D Material FET Biosensors: Functionalization Strategies and Detection Performance.
  europepmc 2026 置信度 0.80
• Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes.
  europepmc 2026 置信度 0.80
• Electrical and Biosensing Performance Analysis of GaSbP/InP Heterojunction Gate-All-Around Nanowire TFET
  europepmc 2025 置信度 0.80
• A field-programmable gate array based on wafer-scale 2D semiconductor.
  europepmc 2025 置信度 0.80
• Synergistic Effects of Additive Engineering in Enhancing the Performance of Sn-Pb Perovskite Thin-Film Transistors and Derived Logic Circuits.
  europepmc 2026 置信度 0.80
• Coplanar Floating-Gate Antiferroelectric Transistor with Multifunctionality for All-in-One Analog Reservoir Computing.
  europepmc 2026 置信度 0.80
• A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics.
  europepmc 2025 置信度 0.80
• Reconfigurable Integrated High-Speed Thermal Metamaterial Pixel Arrays.
  europepmc 2025 置信度 0.80
• Nanoscale Thin-Film Flexible Organic Field-Effect Transistors with Triple PMMA/SiO&lt;sub&gt;2&lt;/sub&gt;/ZnO Gate Insulator Layers.
  europepmc 2026 置信度 0.80
• A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection.
  europepmc 2025 置信度 0.80
• Intrinsically flexible multimode reconfigurable transistors for polymorphic circuits and neuromorphic devices.
  europepmc 2025 置信度 0.80
• WoundMx: multiplexed detection of wound infection biomarkers with a multimodal sensor system based on laser-induced graphene.
  europepmc 2026 置信度 0.80
• Fabrication and characterization of n-type Ge&lt;sub&gt;1-x&lt;/sub&gt;Sn&lt;sub&gt;x&lt;/sub&gt;- and Si&lt;sub&gt;1-x-y&lt;/sub&gt;Ge&lt;sub&gt;y&lt;/sub&gt;Sn&lt;sub&gt;x&lt;/sub&gt;-on-SOI junctionless transistors.
  europepmc 2025 置信度 0.80
• Scalable Edge Contacts to Two-dimensional Semiconductors
  europepmc 2026 置信度 0.80
• The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation.
  europepmc 2026 置信度 0.80
• The rise of rubber-like synthetic polymers in next-gen transistor technologies.
  europepmc 2025 置信度 0.80
• Defect Characterization of the SiO&lt;sub&gt;2&lt;/sub&gt;/Si Interface Investigated by Drift-Assisted Positron Annihilation Lifetime Spectroscopy.
  europepmc 2026 置信度 0.80
• A hierarchical sub-modeling approach for the thermo-mechanical analysis of a TFT-FOPLP.
  europepmc 2025 置信度 0.80
• Tunable Superlinear Gallium Oxide Gate-All-Around Deep-Ultraviolet Phototransistor for Near-Field Imaging.
  europepmc 2025 置信度 0.80
• Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application.
  europepmc 2025 置信度 0.80
• Boron-doped diamond solution-gate field-effect transistor (BDD-SGFET) biosensor for gene mutation detection.
  europepmc 2026 置信度 0.80
• Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range.
  europepmc 2025 置信度 0.80
• Predictive modeling of drain current in advanced FET architectures using ML-based TCAD calibration.
  europepmc 2026 置信度 0.80