半导体与先进封装 · 全部实体（第 10 / 100 页）

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• Electrolyte-Gated Transistors for Neuromorphic Signal Processing and Biosensing
  This thesis describes the design, fabrication and testing of neuromorphic electronic devices designed to detect target biomolecules in solution. Within these devices, the critical sensing layer was formed from a polymer treated using a plasma processing method…
  datacite Sylvander, Luke 2025 置信度 0.66 Electronic and magnetic properties of condensed matter; superconductivity
• INTEGRATED VACUUM TRANSISTORS AND FIELD EMITTER ARRAYS
  The arrival of Si transistors and integrated circuit technology more than half a century ago made vacuum electronic technology almost extinct. Today, there are only a few niche applications for vacuum electronics. The main issues with this technology are its h…
  datacite Ghotbi, Shabnam 2023 置信度 0.66 Electrical engineering not elsewhere classified
• INTEGRATED VACUUM TRANSISTORS AND FIELD EMITTER ARRAYS
  The arrival of Si transistors and integrated circuit technology more than half a century ago made vacuum electronic technology almost extinct. Today, there are only a few niche applications for vacuum electronics. The main issues with this technology are its h…
  datacite Ghotbi, Shabnam 2023 置信度 0.66 Electrical engineering not elsewhere classified
• TRANSPORT PROPERTIES OF LOW DIMENSIONAL MATERIALS AND THEIR APPLICATIONS TOWARD HIGH PERFORMANCE FETS
  The miniaturization of a MOSFET is the constant driving force in semiconductor technology over the decades. This scaling enables the realization of the ever complex and functional integration on a single chip where over tens of billions of transistors densely …
  datacite Zhou, Ruiping 2021 置信度 0.66 Electrical engineering not elsewhere classified
• TRANSPORT PROPERTIES OF LOW DIMENSIONAL MATERIALS AND THEIR APPLICATIONS TOWARD HIGH PERFORMANCE FETS
  The miniaturization of a MOSFET is the constant driving force in semiconductor technology over the decades. This scaling enables the realization of the ever complex and functional integration on a single chip where over tens of billions of transistors densely …
  datacite Zhou, Ruiping 2021 置信度 0.66 Electrical engineering not elsewhere classified
• Information Density Theory.
  Subject: Detailed Introduction to Information Density (ID) and the Hamzah Lagrangian Extraction Computational Threshold: Postdoctoral Level (Information Physics) 1. Epistemological Analysis and Critique (The Hardware-Matter Fallacy) In Level 161 physics (Gener…
  datacite SEYED RASOUL, HAMZAH 2026 置信度 0.66
• Information Density Theory.
  Subject: Detailed Introduction to Information Density (ID) and the Hamzah Lagrangian Extraction Computational Threshold: Postdoctoral Level (Information Physics) 1. Epistemological Analysis and Critique (The Hardware-Matter Fallacy) In Level 161 physics (Gener…
  datacite SEYED RASOUL, HAMZAH 2026 置信度 0.66
• Nanotechnology in Electronics: Advancement in Nanochips, Neural Interface and Quantum Process
  Nanotechnology has become a key factor in modern electronics. It allows for the creation of highly efficient, compact semiconductor devices. The shift from microelectronics to nanoelectronics has increased transistor density, processing speed, and energy effic…
  datacite K, Deepan, Dr. M. Rathi 2026 置信度 0.66
• 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
  To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-l…
  datacite Karapetyan, Shake, Zeltmann, Steven E., Wilk, Glen, Chen, Ta-Kun 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down
  THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down A Complete Technical Specification of Reality and Its Human Approximations Driven by Dean Kulik February 2026 Abstract This paper argues — and proves — one thing: e…
  datacite Kulik, Dean 2026 置信度 0.66
• THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down
  THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down A Complete Technical Specification of Reality and Its Human Approximations Driven by Dean Kulik February 2026 Abstract This paper argues — and proves — one thing: e…
  datacite Kulik, Dean 2026 置信度 0.66
• 3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation.
  3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation. ..............................................................................................................................................…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• 3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation.
  3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation. ..............................................................................................................................................…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Earth is not a Lifeless Mass of Rock, But an Intelligent Bio-Quantum Chip.
  اکنون «ابر-لاگرانژیِ واحدِ سیاره‌ای» (The Unified Planetary Source-Code Lagrangian) را ارائه می‌دهم. این معادله، «مادرِ تمامِ محاسبات» برای ۱۰۰ پارادوکس، آتشفشان‌ها، زلزله‌ها، پدیده‌های جوی و پایداری حیات است که در این گفتگو اثبات کردیم. این لاگرانژی نشان می‌د…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Earth is not a Lifeless Mass of Rock, But an Intelligent Bio-Quantum Chip.
  اکنون «ابر-لاگرانژیِ واحدِ سیاره‌ای» (The Unified Planetary Source-Code Lagrangian) را ارائه می‌دهم. این معادله، «مادرِ تمامِ محاسبات» برای ۱۰۰ پارادوکس، آتشفشان‌ها، زلزله‌ها، پدیده‌های جوی و پایداری حیات است که در این گفتگو اثبات کردیم. این لاگرانژی نشان می‌د…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Advanced FET Biosensors: Design, Materials, and Biomedical Applications
  preprints 2025 置信度 0.74
• Investigation of Short Channel Effects in Al0.30Ga0.60As Channel Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications
  preprints 2025 置信度 0.74
• Digital OTAs: Conventional Designs Versus Emerging Concept
  preprints 2026 置信度 0.74
• Nanoscale geometrical patterning for junctionless thermoelectrics
  preprints 2026 置信度 0.74
• 2D PbS Quantum Dot Superlattices with Unprecedented Area Coverage and Homogeneity via Langmuir-Schaefer Deposition
  preprints 2025 置信度 0.74
• Heavy fermions, mass renormalization, and local moments in magic-angle twisted bilayer graphene via planar tunneling spectroscopy
  preprints 2025 置信度 0.74
• Integration of ethologically defined anxiety-related behaviors in the ventral hippocampus
  preprints 2026 置信度 0.74
• Non Functionalized Graphene Ribbons Fet Biosensor Platform: Sars-Cov-2 Detection on Tio2 Gate Dielectric Windows
  preprints 2023 置信度 0.74
• A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect
  preprints 2023 置信度 0.74
• Investigation of Common Source Amplifier Circuit Application Using Gate Stack Based Gate-all-around Charge Plasma Nanowire FET
  Abstract The reported work demonstrates the application of common source amplifier circuit using gate-all-around gate stacked charge plasma nanowire field effect transistor (GAA GS CP NW FET). Primarily, the impact of the gate stacking (GS) technique upon the …
  preprints LEO RAJ SOLAY, PRADEEP KUMAR, S INTEKHAB AMIN, SUNNY ANAND 2022 置信度 0.74
• A High-Precision Timing Method and Digital Interface for Closed-Loop TMS
  Objective Current transcranial magnetic stimulation (TMS) protocols exhibit high inter-subject variability in treatment outcomes, highlighting the need for personalized, brain-state-dependent closed-loop stimulation protocols. To enable such protocols, we aim …
  preprints 2025 置信度 0.74
• An open-sourced 3D printable microscope with a large CNC stage
  preprints 2025 置信度 0.74
• A Biomass-Based Electret Filter with Persistent Electrostatic Charges for Eco-Friendly and Greener Face Mask Material
  preprints 2023 置信度 0.74
• Phonon Scattering Effect on Self-heating in GAAFET Transistor Using the DPL heat conduction model
  preprints 2022 置信度 0.74
• Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctioless MOSFET For Low Power Applications
  preprints 2021 置信度 0.74
• The Effects of Source Doping Concentration and Doping Gradient on the ON-State Current of Si Nanowire TFETs
  preprints 2022 置信度 0.74
• Peculiar Transient Behaviors of Organic Electrochemical Transistors Governed by Ion Injection Directionality
  preprints 2023 置信度 0.74
• Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor
  Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using…
  preprints Rishu Chaujar, Mekonnen Getnet Yirak 2021 置信度 0.74
• Graphene Field Effect Biosensor for Concurrent and Specific Detection of SARS-CoV-2 and Influenza
  preprints 2022 置信度 0.74
• Automated Measurement and Analysis of Sidewall Roughness (SWR) Using 3D-AFM
  preprints 2021 置信度 0.74
• Multimodal system for recording individual-level behaviors in songbird groups
  preprints 2023 置信度 0.74
• An all-solid-state heterojunction oxide transistor for the rapid detection of biomolecules and SARS-CoV-2 spike S1 protein
  preprints 2021 置信度 0.74
• Label-Free and Portable Field-Effect Sensor for Monitoring Rt-Lamp Products to Detect Sars-Cov-2 in Wastewater
  preprints 2022 置信度 0.74
• Feasibility of a silicon thin film transistor-based aptamer sensor for COVID-19 detection
  preprints 2020 置信度 0.74
• Source-All-Around Tunnel Field-Effect Transistor (SAA-TFET): Proposal and Design
  In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provi…
  preprints Ahmed Shaker, Ahmed Maged, Ali Elshorbagy, Abdallh AbouElainain 等 2019 置信度 0.74
• Control of antibody orientation on graphene using porphyrin linker molecules for high-performance graphene-based immuno-biosensors
  preprints 2023 置信度 0.74
• SARS-CoV-2 multi-variant graphene biosensor based on engineered dimeric ACE2 receptor
  preprints 2021 置信度 0.74
• Multimodal system for recording individual-level behaviors in songbird groups
  preprints 2022 置信度 0.74
• MicroFPGA: an affordable FPGA platform for microscope control
  preprints 2022 置信度 0.74
• An analytical model for P+ pocket SiC gate all around Junctionless field effect transistor with impact of high temperature
  crossref Nagalakshmi Yarlagadda, Yogesh Kumar Verma 2023-07-27T20:24:49Z 置信度 0.70
• Parameter Variations of a Short Channel Gaas Junctionless-Gate-All-Around Field-Effect Transistor Including Quantum Mechanical Effects
  This paper presents a numerical simulation to examine the performance of GaAs Junctionless-Gate-All-Around (JGAA) Field-Effect Transistor (FET) under quantum effect. The behaviours of quantum are studied based on the Density-Gradient Model in a short channel d…
  crossref Faidzal Rasol, Fatimah Khairiah Abd. Hamid, Zaharah Johari, Mastura Syafinaz Zainal Abidin 等 2022-03-21T23:13:37Z 置信度 0.70
• Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications
  In this paper, design and parameter optimization for the performance analysis of a Gate-All-Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) has been carried out based on the various quantum ballistic simulation models. The simulation results show a…
  crossref Rajiv Ranjan Thakur, Nidhi Chaturvedi 2021-07-06T03:49:49Z 置信度 0.70
• Impact of Zig-Zag Layer on MoS₂ based Nanoribbon Gate-all-Around Field Effect Transistor
  crossref Anand M. Bhujade, Rajesh C. Junghare, Ganesh C. Patil 2020-03-13T02:59:32Z 置信度 0.70
• A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  crossref Reza Hosseini, Neda Teimourzadeh, Morteza Fathipour 2013-08-21T12:56:23Z 置信度 0.70
• Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel width
  We investigate the electrical characteristics of a double-gate-all-around (DGAA) transistor with an asymmetric channel width using three-dimensional device simulation. The DGAA structure creates a silicon nanotube field-effect transistor (NTFET) with a core-sh…
  crossref Myunghwan Ryu, Franklin Bien, Youngmin Kim 2016-01-22T20:10:53Z 置信度 0.70
• Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance
  crossref Xiaoqiao Dong, Yuancheng Yang, Gong Chen, Shuang Sun 等 2018-12-13T00:48:43Z 置信度 0.70
• Performance analysis of surrounding cylindrical gate all around nanowire transistor for biomedical application
  crossref Amit Agarwal, Prashanta Chandra Pradhan, Bibhu Prasad Swain 2021-01-29T07:48:57Z 置信度 0.70
• Junctionless Silicon-Nanowire Gate-All-Around Tunnel Field Effect Transistor
  crossref M. W. Akram, Bahniman Ghosh 2014-07-04T22:27:49Z 置信度 0.70
• Subthreshold Drain Current Model of Cylindrical Gate All‐Around Junctionless Transistor With Three Different Gate Materials
  ABSTRACT A novel subthreshold drain current model has been developed for a cylindrical gate all‐around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectivel…
  crossref S. Manikandan, P. Suveetha Dhanaselvam, M. Karthigai Pandian 2024-10-28T05:35:26Z 置信度 0.70
• NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
  crossref A. Martinez, M. Aldegunde, A.R. Brown, S. Roy 等 2011-12-01T20:33:23Z 置信度 0.70
• Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor
  crossref Minkyu Je, Sangyeon Han, Ilgweon Kim, Hyungcheol Shin 2017-04-04T13:45:17Z 置信度 0.70
• Performance Evaluation of a Gate All Around Junctionless Field Effect Transistor Based Biosensor with a Nano-Cavity Region
  crossref Mahsab Al Rahman, Ehteshum Hossain, Farhana Siddiqui 2021-05-03T18:38:17Z 置信度 0.70
• Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
  The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven…
  crossref Pushpapraj Singh, Woo-Tae Park, Jianmin Miao, Lichun Shao 等 2012-02-07T23:53:30Z 置信度 0.70
• More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring
  crossref Md. Hasan Raza Ansari, Seongjae Cho, Byung-Gook Park 2020-10-07T21:02:19Z 置信度 0.70
• Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB
  crossref R Helen Ramya Bharathi, P. Karthikeyan 2018-02-07T20:45:47Z 置信度 0.70
• Characteristics and sensitivity of p-type junctionless gate-all-around nanowire transistor
  crossref Ming-Hung Han, Yi-Ruei Jhan, Jia-Jiun Wu, Hung-Bin Chen 等 2012-09-07T15:57:32Z 置信度 0.70
• Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
  In this paper, we investigate the impact of different phonon scattering mechanisms on the performance of a small silicon gate-all-around nanowire field effect transistor. The Non-equilibrium Green's function (NEGF) framework in the effective mass approximation…
  crossref M. Aldegunde, A. Martinez, J. R. Barker 2013-01-04T12:26:26Z 置信度 0.70
• Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory
  crossref Po-Chun Huang, Lu-An Chen, Jeng-Tzong Sheu 2010-02-12T16:25:35Z 置信度 0.70
• Impact of Work Function and Silicon Thickness on 3-D Analytical Model of Gate All Around Field Effect Transistor
  crossref Ritu Yadav, Kavita Goyal, Amit Kaushik 2022-02-25T20:36:07Z 置信度 0.70
• Multiphysics Analysis of Heat Transfer in Gate All Around (GAA) Silicon Nanowire Transistor: Material Perspective
  crossref Neel Chatterjee, Sujata Pandey 2016-10-20T13:54:49Z 置信度 0.70
• Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor
  crossref Yoon-Ha Jeong, Sang-Hyun Lee, Ye-Ram Kim, Rock-Hyun Baek 等 2019-06-10T04:58:38Z 置信度 0.70
• A highly linear RF mixer using gate-all-around junctionless transistor
  crossref Sunil Pandey, Chitrakant Sahu, Jawar Singh 2016-01-07T06:22:18Z 置信度 0.70
• Thermal Crosstalk Analysis in Advanced CMOS Circuits: Insights from 3nm Gate-All-Around Transistor Technology
  crossref Sihao Chen, Honglin Wu, Runsheng Wang, Ru Huang 等 2025-06-30T17:36:02Z 置信度 0.70
• Attractive Potential Around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor
  crossref 2020-07-09T23:59:49Z 置信度 0.70
• Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor
  Gate oxide reliability has become a significant concern for emerging technology nodes, particularly as transistors continue to scale down. Quantum confinement effects in nano-scaled devices complicate the trapping dynamics near the interface. Although these be…
  crossref Xufan Li, Shijie Huang, Jiawei Wang, Lingfei Wang 等 2024-12-17T10:25:47Z 置信度 0.70
• Gate-All-Around Nanopore Osmotic Power Generators
  crossref 2024-05-28T05:11:45Z 置信度 0.70
• Radiation Hardness Study of FinFET and Gate-All-Around FET SRAM
  crossref Albert Lu 2026-02-17T19:02:56Z 置信度 0.70
• Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs
  crossref Pankaj Kumar, Kalyan Koley, Subindu Kumar 2024-05-21T02:28:23Z 置信度 0.70
• A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor
  crossref C. Usha, P. Vimala 2020-07-04T12:02:32Z 置信度 0.70
• Depletion-All-Around Operation of the SOI Four-Gate Transistor
  crossref Kerem Akarvardar, Sorin Cristoloveanu, Pierre Gentil, Ronald D. Schrimpf 等 2007-01-23T19:41:50Z 置信度 0.70
• Study of line edge roughness on various types of gate-all-around field effect transistor
  Abstract The impact of line edge roughness (LER) on gate-all-around FETs (GAAFETs) with various channel types is investigated. Among various channel types of GAAFET, (i) nanowire (NW), (ii) nanosheet (NS), and (iii) stacked channel are investigated. Considerin…
  crossref Jinhong Min, Changhwan Shin 2019-10-30T19:15:49Z 置信度 0.70
• A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor
  A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effect transistor (FET) is presented and discussed in this paper. The device architecture is based on the realization of poly-SiNW in a V-shaped cavity obtained by …
  crossref Asseya El-amiri, Fouad Demami 2024-01-26T04:42:27Z 置信度 0.70
• Vertical Silicon Nanowire Gate-All-Around Field Effect Transistor Based Nanoscale CMOS
  crossref Satish Maheshwaram, S. K. Manhas, Gaurav Kaushal, Bulusu Anand 等 2011-07-13T17:29:51Z 置信度 0.70
• III-V-Based Gate-All-Around Cylindrical Nanowire Junctionless Field Effect Transistor
  This chapter represents some essential aspects of nanowires and their transport properties. Scaling of MOSFETs becomes a huge problem for industries due to short channel effects (SCEs) and sub-threshold leakage current. So, nanowires become a good solution to …
  crossref Pooja Shilla, Raj Kumar, Arvind Kumar 2020-10-28T09:46:30Z 置信度 0.70
• Variability-Aware Simulation Strategy for Gate-All-Around Vertical Field Effect Transistor
  crossref Kyul Ko, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin 2019-04-26T04:54:46Z 置信度 0.70
• Simulation of Electrical Characteristics of Gate All around Silicon Nanowire Field Effect Transistor using Extended Hückel Theory Based Semi Empirical Approach
  crossref Mayank Chakraverty 2016-07-22T02:23:18Z 置信度 0.70
• Novel Stacked Floating Fin Structure Gate-All-Around Field-Effect Transistor for Design and Power Optimization
  crossref Munhyeon Kim, Kitae Lee, Sihyun Kim, Soyoun Kim 等 2019-06-06T19:17:36Z 置信度 0.70
• Effect of Oxidation-induced Tensile Strain on Gate-all-Around Silicon Nanowire Based Single-electron Transistor Fabricated using Optical Lithography
  crossref Y. Sun, Unknown. Rusli, N. Singh 2015-09-18T05:46:06Z 置信度 0.70
• Design and Performance Analysis of High-k Gate All Around Fin-field Effect Transistor
  crossref K. Rohith Sai, K. Girija Sravani, K. Srinivasa Rao, B. Balaji 等 2023-12-09T17:37:35Z 置信度 0.70
• Impact of Band Alignment on Line Electron Density and Channel Capacitance of Rectangular n-Channel Gate-All-Around Wire Field-Effect Transistor
  crossref Shingo Sato, Yasuhisa Omura 2008-03-16T06:32:17Z 置信度 0.70
• A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics
  crossref Mohammad Karbalaei, Daryoosh Dideban, Hadi Heidari 2020-06-11T07:58:07Z 置信度 0.70
• Synaptic devices based on gate-all-around InAs nanowire field effect transistor
  In this paper, we proposed a gate-all-around InAs nanowire field effect transistor (GAA InAs NW FET) that can simulate synaptic behaviors such as short-term potentiation (STP) and long-term potentiation (LTP). The native oxide layer (In 2 O 3 ) on the surface …
  crossref Wei Luo, Chaofei Zha, Xia Zhang, Xin Yan 等 2022-11-11T15:52:00Z 置信度 0.70
• Process variations and short channel effects analysis in gate-all-around nanowire field-effect transistor using a statistical Taguchi-Pareto ANOVA framework
  Abstract Gate-all-around nanowire field-effect transistor (GAA NWFET) is a viable alternative to reduce short channel effects. A 3D model of the GAA NWFET was explored by studying the effect of process parameters such as nanowire materials, gate oxide material…
  preprints Shi Kai Yau, Sharifah Fatmadiana Wan Muhamad Hatta, Yasmin Abdul Wahab, Siti Nabila Aidit 等 2022 置信度 0.74
• Study of Short Channel Parameters in Triple Gate and Gate All Around Nanowire Fet
  crossref Suruchi Saini, Hitender Kumar Tyagi 2025-02-17T16:44:58Z 置信度 0.70
• Gate-all-around nanowire FET sensors with ultrahigh sensitivity and low noise
  crossref Singh Pushpapraj 2019-10-03T07:46:05Z 置信度 0.70
• Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime
  crossref Yasuhisa Omura 2013-12-21T15:14:25Z 置信度 0.70
• A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With $\hbox{NH}_{3}$ Plasma Treatment
  crossref Chen-Ming Lee, Bing-Yue Tsui 2010-06-14T19:46:51Z 置信度 0.70
• Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime
  In this paper we propose a simple model to examine the design feasibility of Si wire gate-all-around (GAA) metal–oxide–semiconductor field-effect transistor (MOSFET) having a sub-30-nm channel. Although the model has one fitting parameter, it successfully repr…
  crossref Yasuhisa Omura 2011-01-21T05:50:29Z 置信度 0.70
• Approximate Analysis of Cylindrical Ferroelectric Capacitor and Derivation of Drain Current Characteristics in Ferroelectric Gate-All-Around Carbon Nanotube Transistor
  crossref Masakazu Ibata, Hiroshi Ishiwara 2013-12-21T15:17:08Z 置信度 0.70
• Effect of Oxidation-Induced Tensile Strain on Gate-All-Around Silicon-Nanowire-Based Single-Electron Transistor Fabricated Using Deep-UV Lithography
  crossref Yongshun Sun, Rusli, Navab Singh 2011-04-06T18:14:21Z 置信度 0.70
• Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate
  crossref Young Jun Yoon, Jae Sang Lee, In Man Kang, Dong-Seok Kim 2021-01-07T21:14:59Z 置信度 0.70
• Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistor in 3D Heterogeneously Integrated Circuits
  crossref Yizhang Liu, Wenchao Chen, Shuo Zhang, Liang Tian 等 2024-12-31T19:21:53Z 置信度 0.70
• Design optimization InGaAs/GaAsSb-based heterojunction Gate-all-around (GAA) arch-shaped tunneling field-effect transistor (A-TFET)
  crossref Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, In Man Kang 2018-04-06T00:22:40Z 置信度 0.70
• Fabrication and Transport Properties of Silicon Quantum Wire Gate-All-Around Transistor
  A novel fabrication method of silicon quantum wire gate-all-around transistor (GAAT), in which the gate oxide and the gate electrode are wrapped around ultrafine silicon quantum wire, has been proposed. In order to verify one-dimensional (1D) subband effects, …
  crossref Kiyoshi Morimoto, Yoshihiko Hirai, Koichirou Yuki Koichirou Yuki, Kiyoyuki Morita Kiyoyuki Morita 2002-10-01T21:20:07Z 置信度 0.70
• Performance Analysis of Silicon and III-V Channel Material for Junctionless-Gate-All-Around Field Effect Transistor
  crossref M. F. M. Rasol, F. K. A. Hamid, Zaharah Johari, Rashidah Arsat 等 2020-11-12T16:57:28Z 置信度 0.70