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• Near-field cavity optomechanical coupling in a compound semiconductor nanowire
  A III-V compound semiconductor nanowire is an attractive material for a novel hybrid quantum interface that interconnects photons, electrons, and phonons through a wavelength-tunable quantum structure embedded in its free-standing structure. In such a nanomech…
  arxiv Motoki Asano, Guoqiang Zhang, Takehiko Tawara, Hiroshi Yamaguchi 等 2020-06-30T05:32:42Z 置信度 0.78 cond-mat.mes-hallphysics.optics
• Multi-output Classification Framework and Frequency Layer Normalization for Compound Fault Diagnosis in Motor
  This work introduces a multi-output classification (MOC) framework designed for domain adaptation in fault diagnosis, particularly under partially labeled (PL) target domain scenarios and compound fault conditions in rotating machinery. Unlike traditional mult…
  arxiv Wonjun Yi, Yong-Hwa Park 2025-04-15T13:40:16Z 置信度 0.78 cs.LG
• Shift of Infrared Absorption and Emission Spectra of Transition Metal Ions in Solid Solutions of Semiconductor Compounds
  A universal theoretical model is proposed that explains the observed shift of IR absorption and emission bands in the spectra of transition metal ions in solid solutions of semiconductor compounds. The model has been used for estimating the long-wavelength shi…
  arxiv S. V. Naydenov 2021-06-27T07:54:26Z 置信度 0.78 cond-mat.mtrl-sciphysics.optics
• Comment on "Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces"
  In a recent Letter, Zhao et al. [1] reported the origin of quasi-one-dimensional metal-insulator (MI) transitions in compound semiconductor surfaces. Based on a density-functional theory (DFT) calculation within the generalized gradient approximation (GGA), th…
  arxiv Sun-Woo Kim, Yoon-Gu Kang, Hyun-Jung Kim, Jun-Hyung Cho 2016-11-25T10:30:46Z 置信度 0.78 cond-mat.mes-hall
• Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study
  Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based semiconductors …
  arxiv Yan Qian, Haiping Wu, Erjun Kan, Kaiming Deng 2017-03-11T02:01:15Z 置信度 0.78 cond-mat.mes-hall
• The melilite-type compound (Sr$_{1-x}$,$A_x$)$_2$MnGe$_2$S$_6$O ($A$=K, La) being a room temperature ferromagnetic semiconductor
  The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage propert…
  arxiv Huan-Cheng Yang, Ben-Chao Gong, Kai Liu, Zhong-Yi Lu 2018-04-12T13:59:23Z 置信度 0.78 cond-mat.mtrl-sci
• High-resolution soft x-ray photoemission study of a Kondo semiconductor and related compounds
  We have performed the bulk-sensitive high-resolution soft x-ray photoemission study of a Kondo semiconductor CeRhAs and related compounds CeNiSn and CePdSn. The comparison of the spectra of polycrystalline CePdSn on the fractured and scraped surfaces shows tha…
  arxiv A. Sekiyama, Y. Fujita, M. Tsunekawa, S. Kasai 等 2004-10-14T12:27:47Z 置信度 0.78 cond-mat.str-el
• Energy shifts and broadening of excitonic resonances in electrostatically-doped semiconductors
  Tuning the density of resident electrons or holes in semiconductors provides crucial insight into the composition of excitonic complexes that are observed as absorption or photoluminescence resonances in optical studies. Moreover, we can change the way these r…
  arxiv Hanan Dery, Cedric Robert, Scott A. Crooker, Xavier Marie 等 2024-11-18T18:04:22Z 置信度 0.78 cond-mat.mtrl-sci
• Search for spin gapless semiconductors: The case of inverse Heusler compounds
  We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results…
  arxiv S. Skaftouros, K. Ozdogan, E. Sasioglu, I. Galanakis 2012-10-19T09:27:19Z 置信度 0.78 cond-mat.mtrl-sci
• Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors
  We show that one-photon absorption of linearly polarized light should produce pure spin currents in noncentrosymmetric semiconductors, including even bulk GaAs. We present 14x14 k.p model calculations of the effect in GaAs, including strain, and pseudopotentia…
  arxiv R. D. R. Bhat, F. Nastos, Ali Najmaie, J. E. Sipe 2004-04-02T23:06:40Z 置信度 0.78 cond-mat.other
• Transforming common III-V and II-VI semiconductor compounds into topological heterostructures: The case of CdTe/InSb superlattices
  Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a heterovalent superlattice ma…
  arxiv Qihang Liu, Xiuwen Zhang, L. B. Abdalla, Alex Zunger 2016-01-22T23:58:19Z 置信度 0.78 cond-mat.mtrl-sci
• Hard x-ray emission spectroscopy: a powerful tool for the characterization of magnetic semiconductors
  This review aims to introduce the x-ray emission spectroscopy (XES) and resonant inelastic x-ray scattering (RIXS) techniques to the materials scientist working with magnetic semiconductors (e.g. semiconductors doped with 3d transition metals) for applications…
  arxiv Mauro Rovezzi, Pieter Glatzel 2013-12-02T10:25:12Z 置信度 0.78 cond-mat.mtrl-sciphysics.atom-ph
• Non-collinear Magnetic states of Mn5Ge3 compound
  Mn5Ge3 thin films epitaxially grown on Ge(111) exhibit metallic conductivity and strong ferromagnetism up to about 300 K. Recent experiments suggest a non-collinear spin structure. In order to gain deep insights into the magnetic structure of this compound, we…
  arxiv A. Stroppa, M. Peressi 2006-08-07T20:14:54Z 置信度 0.78 cond-mat.mtrl-sci
• A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds
  Using first-principles calculations, we investigate the band structures of a series of quaternary LiMgPdSn-type Heusler compounds. Our calculation results show that five compounds CoFeMnSi, CoFeCrAl, CoMnCrSi, CoFeVSi and FeMnCrSb possess unique electronic str…
  arxiv G. Z. Xu, E. K. Liu, Y. Du, G. J. Li 等 2013-01-31T01:38:12Z 置信度 0.78 cond-mat.mtrl-sci
• Budget-Constrained Compound Library Prioritization with Risk Awareness and Uncertainty Quantification
  Early discovery projects often face a budgeted prioritization problem: many structures can be enumerated or purchased, but only a small fraction can be tested, reviewed, or synthesized first. I formulate this setting as risk-aware compound-library compression.…
  arxiv Shengyao Liang 2026-06-25T05:39:11Z 置信度 0.78 q-bio.QM
• Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds
  We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gi…
  arxiv Daniel Olguin, Rafael Baquero 1996-06-14T04:35:47Z 置信度 0.78 cond-mat
• Stochastic differential equation model for spontaneous emission and carrier noise in semiconductor lasers
  We present a new stochastic differential equation model for the spontaneous emission noise and carrier noise in semiconductor lasers. The correlations between these two types of noise have often been neglected in recent studies of the effects of the noise on t…
  arxiv Austin McDaniel, Alex Mahalov 2017-09-12T17:18:10Z 置信度 0.78 physics.app-ph
• A Joint Approach to Compound Splitting and Idiomatic Compound Detection
  Applications such as machine translation, speech recognition, and information retrieval require efficient handling of noun compounds as they are one of the possible sources for out-of-vocabulary (OOV) words. In-depth processing of noun compounds requires not o…
  arxiv Irina Krotova, Sergey Aksenov, Ekaterina Artemova 2020-03-21T09:00:52Z 置信度 0.78 cs.CL
• Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier
  We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation …
  arxiv Semion Saikin, Min Shen, Ming-Cheng Cheng 2005-12-16T21:05:17Z 置信度 0.78 cond-mat.mes-hall
• Improving Radio Systems Efficiency via Employing SCRO-SOA (Squared Cosine Roll off Filter -- Semiconductor Optical Amplifier Technology) in DWDM-RoF System
  The increasing demand on the internet trafficking to meet the demands of video streaming and mobile communication has exerted too much pressure. Accordingly, this demand will result in providing high bandwidth which in turn increase the use of cells on the net…
  arxiv Bashar J. Hamza, Wasan Kadhim Saad, Mohamed Ahmed AbdulNabi, Waheb A. Jabbar 等 2020-09-28T14:07:01Z 置信度 0.78 eess.SP
• Surface-sensitive NMR in optically pumped semiconductors
  We present a scheme of surface-sensitive nuclear magnetic resonance in optically pumped semiconductors, where an NMR signal from a part of the surface of a bulk compound semiconductor is detected apart from the bulk signal. It utilizes optically oriented nucle…
  arxiv Atsushi Goto, Tadashi Shimizu, Kenjiro Hashi, Shinobu Ohki 2008-06-12T05:22:27Z 置信度 0.78 cond-mat.mes-hall
• Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution
  We introduce an approach to calculate the thermodynamic oxidation and reduction potentials of semiconductors in aqueous solution. By combining a newly-developed ab initio calculation for compound formation energy and band alignment with electrochemistry experi…
  arxiv Shiyou Chen, Lin-Wang Wang 2012-03-09T01:55:16Z 置信度 0.78 cond-mat.mtrl-sci
• Pursuit of thermoelectric properties in a novel Half Heusler compound: HfPtPb
  We explore the structural, electronic, mechanical and thermoelectric properties of a new half Heusler compound, HfPtPb which is all metallic heavy element and has been recently been proposed to be stable [Nature Chem 7 (2015) 308]. In the present work, we empl…
  arxiv Kulwinder Kaur, D. P. Rai, R. K. Thapa, Sunita Srivastava 2017-05-11T04:49:38Z 置信度 0.78 cond-mat.mtrl-sci
• CrCTe$_3$: Computational design of a robust two-dimensional anti-ferromagnetic semiconductor
  Using density functional theory calculations we establish the hitherto unknown compound CrCTe$_3$ to be a stable anti-ferromagnetic semiconductor in the R$\bar{3}$ crystal structure with an indirect fundamental gap . Successive layers in the bulk compound are …
  arxiv Satyananda Chabungbam, Prasenjit Sen 2017-07-04T09:40:12Z 置信度 0.78 cond-mat.mtrl-sci
• Compound-QA: A Benchmark for Evaluating LLMs on Compound Questions
  Large language models (LLMs) demonstrate remarkable performance across various tasks, prompting researchers to develop diverse evaluation benchmarks. However, most benchmarks typically measure the ability of LLMs to respond to individual questions, neglecting …
  arxiv Yutao Hou, Yajing Luo, Zhiwen Ruan, Hongru Wang 等 2024-11-15T13:12:29Z 置信度 0.78 cs.CL
• Compound Poisson and signed compound Poisson approximations to the Markov binomial law
  Compound Poisson distributions and signed compound Poisson measures are used for approximation of the Markov binomial distribution. The upper and lower bound estimates are obtained for the total variation, local and Wasserstein norms. In a special case, asympt…
  arxiv V. Čekanavičius, P. Vellaisamy 2010-11-26T09:21:36Z 置信度 0.78 math.ST
• Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires
  We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We validate the model using…
  arxiv Danylo Mosiiets, Yann Genuist, Joël Cibert, Edith Bellet-Amalric 等 2024-01-29T16:16:41Z 置信度 0.78 cond-mat.mtrl-sci
• Experimental realization of a semiconducting full Heusler compound: Fe2TiSi
  Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due …
  arxiv Markus Meinert, Manuel P. Geisler, Jan Schmalhorst, Ulrich Heinzmann 等 2014-02-24T09:05:57Z 置信度 0.78 cond-mat.mtrl-sci
• Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics
  A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS a…
  arxiv T. Fukumura, Y. Yamada, H. Toyosaki, T. Hasegawa 等 2003-05-19T12:35:05Z 置信度 0.78 cond-mat.mtrl-scicond-mat.str-el
• CompoundE: Knowledge Graph Embedding with Translation, Rotation and Scaling Compound Operations
  Translation, rotation, and scaling are three commonly used geometric manipulation operations in image processing. Besides, some of them are successfully used in developing effective knowledge graph embedding (KGE) models such as TransE and RotatE. Inspired by …
  arxiv Xiou Ge, Yun-Cheng Wang, Bin Wang, C. -C. Jay Kuo 2022-07-12T05:41:32Z 置信度 0.78 cs.AIcs.CLcs.LG
• On Quantum Capacity of Compound Channels
  In this paper we address the issue of universal or robust communication over quantum channels. Specifically, we consider memoryless communication scenario with channel uncertainty which is an analog of compound channel in classical information theory. We deter…
  arxiv I. Bjelakovic, H. Boche, J. Noetzel 2008-08-07T13:03:46Z 置信度 0.78 quant-phcs.ITmath-ph
• Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co
  A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in …
  arxiv H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima 等 2003-07-31T13:12:26Z 置信度 0.78 cond-mat.mtrl-scicond-mat.str-el
• The Compound Capacity of Polar Codes
  We consider the compound capacity of polar codes under successive cancellation decoding for a collection of binary-input memoryless output-symmetric channels. By deriving a sequence of upper and lower bounds, we show that in general the compound capacity under…
  arxiv S. Hamed Hassani, Satish Babu Korada, Ruediger Urbanke 2009-07-19T14:27:01Z 置信度 0.78 cs.IT
• Compound Lucas Magic Squares
  We review a general parameterization of an order-3 magic square derived by Lucas and we compound it to produce a parameterized order-9 magic square. Sequential compounding to higher order also is treated. Expressions are found for the matrices in the Jordan ca…
  arxiv Ronald P. Nordgren 2021-03-01T20:09:18Z 置信度 0.78 math.GM
• A General Formula for Compound Channel Capacity
  A general formula for the capacity of arbitrary compound channels with the receiver channel state information is obtained using the information density approach. No assumptions of ergodicity, stationarity or information stability are made and the channel state…
  arxiv Sergey Loyka, Charalambos D. Charalambous 2016-04-05T21:43:25Z 置信度 0.78 cs.IT
• Compound Arbitrarily Varying Channels
  We propose a communication model, that we call compound arbitrarily varying channels (CAVC), which unifies and generalizes compound channels and arbitrarily varying channels (AVC). A CAVC can be viewed as a noisy channel with a fixed, but unknown, compound-sta…
  arxiv Syomantak Chaudhuri, Neha Sangwan, Mayank Bakshi, Bikash Kumar Dey 等 2021-05-07T17:54:15Z 置信度 0.78 cs.IT
• Compound Bi-free Poisson Distributions
  In this paper, we study compound bi-free Poisson distributions for {\sl two-faced families of random variables}. We prove a Poisson limit theorem for compound bi-free Poisson distributions. Furthermore, a bi-free infinitely divisible distribution for a two-fac…
  arxiv Mingchu Gao 2018-06-04T08:39:41Z 置信度 0.78 math.OA
• Generation of Single, Monodisperse Compound Droplets
  The generation of single, monodisperse compound droplets is shown in these fluid dynamics videos. In an apparatus designed to produce single compound droplets, a piezoelectric diaphragm generates a pressure pulse from a voltage waveform input to eject a drople…
  arxiv James Black, G. Paul Neitzel 2010-10-13T15:57:44Z 置信度 0.78 physics.flu-dyn
• Superconductivity in an organometallic compound
  Organometallic compounds constitute a very large group of substances that contain at least one metal-to-carbon bond in which the carbon is part of an organic group. They have played a major role in the development of the science of chemistry. These compounds a…
  arxiv Ren-Shu Wang, Liu-Cheng Chen, Hui Yang, Ming-An Fu 等 2019-01-11T12:22:00Z 置信度 0.78 cond-mat.supr-concond-mat.mtrl-sci
• Compound and quasi-compound states in low-energy scattering of nucleons from 12C
  A multi-channel algebraic scattering theory has been used to study the properties of nucleon scattering from 12C and of the sub-threshold compound nuclear states, accounting for properties in the compound nuclei to ~10 MeV. All compound and quasi-compound reso…
  arxiv G. Pisent, J. P. Svenne, L. Canton, K. Amos 等 2005-02-04T16:07:55Z 置信度 0.78 nucl-th
• Transistor as a Rectifier
  Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of ~0.6V across its ter…
  arxiv Raju Baddi 2012-04-09T12:26:07Z 置信度 0.78 physics.gen-ph
• An Approach to Use Depletion Charges for Modifying Band Profiles for Field-Effect Transistors
  We present the study of using depletion charges for tailoring lateral band profiles and applying it to the promising gate-all-around field-effect transistors (GAAFET). Specifically, we introduce heavily p-type doped Si next to the channel, but outside the chan…
  arxiv P. Xu, H. Luo 2025-01-23T20:55:36Z 置信度 0.78 cond-mat.mes-hall
• Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
  Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility reachi…
  arxiv Aniruddha Konar, John Mathew, Kaushik. Nayak, Mohit. Bajaj 等 2015-06-24T17:16:56Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Magnetic bipolar transistor
  A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward acti…
  arxiv Jaroslav Fabian, Igor Zutic, S. Das Sarma 2003-07-01T08:16:38Z 置信度 0.78 cond-mat.other
• Spin Hall effect transistor
  Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semicondu…
  arxiv J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zarbo 等 2010-08-17T08:06:25Z 置信度 0.78 cond-mat.mes-hall
• Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
  The growing demand for better performance and lower thermal energy dissipation in nanoelectronic devices is the major driving force of the semiconductor industry's quest for future generations of nanotransistors. Over the past 15 years, the miniaturization of …
  arxiv Houssem Rezgui, Giovanni Nastasi, Manuel Marcoux, Vittorio Romano 2025-05-08T08:29:28Z 置信度 0.78 cond-mat.mes-hall
• Critical Evaluation of Organic Thin-Film Transistor Models
  Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trus…
  arxiv Markus Krammer, James W. Borchert, Andreas Petritz, Esther Karner-Petritz 等 2018-12-20T19:00:12Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph
• A Multifunctional Sub-10nm Transistor
  Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog characteristics and frequency resp…
  arxiv Farshid Raissi, Mina Amirmazlaghani, Ali Rajabi 2021-07-31T17:43:32Z 置信度 0.78 cond-mat.mes-hallphysics.app-ph
• Floquet Quantum Thermal Transistor
  We apply periodic control to realize a quantum thermal transistor, which we term as the Floquet Quantum thermal Transistor. Periodic modulation allows us to control the heat flows and achieve large amplification factors even for fixed bath temperatures. Import…
  arxiv Nikhil Gupt, Srijan Bhattacharyya, Bikash Das, Subhadeep Datta 等 2022-04-13T05:52:54Z 置信度 0.78 quant-phcond-mat.stat-mech
• Quantum thermal transistor
  We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents …
  arxiv Karl Joulain, Jérémie Drevillon, Younès Ezzahri, Jose Ordonez-Miranda 2016-02-11T19:07:32Z 置信度 0.78 quant-phphysics.class-ph
• PRIME: Physics-Related Intelligent Mixture of Experts for Transistor Characteristics Prediction
  In recent years, machine learning has been extensively applied to data prediction during process ramp-up, with a particular focus on transistor characteristics for circuit design and manufacture. However, capturing the nonlinear current response across multipl…
  arxiv Zhenxing Dou, Yijiao Wang, Tao Zou, Zhiwei Chen 等 2025-05-10T15:53:12Z 置信度 0.78 cs.LG
• A Matterwave Transistor Oscillator
  An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two osc…
  arxiv Seth C. Caliga, Cameron J. E. Straatsma, Alex A. Zozulya, Dana Z. Anderson 2012-08-15T13:07:52Z 置信度 0.78 physics.atom-phquant-ph
• Voltage-controlled Hubbard spin transistor
  Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins. Going beyo…
  arxiv Rozhin Yousefjani, Sougato Bose, Abolfazl Bayat 2021-06-24T03:51:31Z 置信度 0.78 quant-phcond-mat.str-el
• Quantum Conductance of the Single Electron Transistor
  The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor at any temperature. …
  arxiv Xiaohui Wang 1999-12-11T11:30:14Z 置信度 0.78 cond-mat.mes-hall
• The Quantum Interference Effect Transistor
  We propose a new type of molecular transistor, the Quantum Interference Effect Transistor (QuIET), based on tunable current suppression due to quantum interference. We show that any aromatic hydrocarbon ring has two-lead configurations for which current at sma…
  arxiv D. M. Cardamone, C. A. Stafford, S. Mazumdar 2005-03-22T09:14:09Z 置信度 0.78 cond-mat.mes-hall
• Coulomb blockade in a Si channel gated by an Al single-electron transistor
  We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Cou…
  arxiv L. Sun, K. R. Brown, B. E. Kane 2007-08-12T19:25:09Z 置信度 0.78 cond-mat.mes-hall
• The Bloch Oscillating Transistor
  We introduce a new mesoscopic transistor, which consists of a superconducting island connected to superconducting and normal electrodes via two mesoscopic tunnel junctions. Furthermore, the island is being charged through a resistor. The interplay between Bloc…
  arxiv H. Seppä, J. Hassel 2003-05-12T15:53:31Z 置信度 0.78 cond-mat.mes-hall
• Hybrid Pass Transistor Logic with Ambipolar Transistors
  In comparison to the conventional complementary pull-up and pull-down logic structure, the pass transistor logic (PTL) family reduces the number of transistors required to perform logic functions, thereby reducing both area and power consumption. However, this…
  arxiv Xuan Hu, Amy S. Abraham, Jean Anne C. Incorvia, Joseph S. Friedman 2020-02-05T16:35:57Z 置信度 0.78 cs.ET
• A mempolar transistor made from tellurium
  The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as hybrid CMOS/memristi…
  arxiv Yifei Yang, Lujie Xu, Mingkun Xu, Huan Liu 等 2023-01-05T09:44:47Z 置信度 0.78 physics.app-ph
• Multiple Functionality in Nanotube Transistors
  Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate vo…
  arxiv F. Leonard, J. Tersoff 2002-05-21T18:55:54Z 置信度 0.78 cond-mat
• High Thermoelectric Cooling Performance of Junction Thermoelectric Transistors
  To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type Bi2Te2.97Se0.03 are used as th…
  arxiv Chen Tang, Bohang Nan, Xiaodong Liu, Guiying Xu 2025-11-07T15:17:10Z 置信度 0.78 physics.app-ph
• Minimal resource to design spin-based quantum transistors
  Designing quantum analogous of classical computers components is the heart of quantum information processors. In this sense, for quantum devices, quantum transistors are believed to be as necessary as the classical ones for classical devices. In this paper we …
  arxiv Alan C Santos 2018-04-19T18:13:46Z 置信度 0.78 quant-ph
• Radiative Thermal Transistor
  Developing thermal analogues of field-effect transistor could open the door to a low-power and even zero-power communication technology working with heat rather than electricity. These solid-sate devices could also find many applications in the field of active…
  arxiv Yuxuan Li, Yongdi Dang, Shen Zhang, Xinran Li 等 2024-06-15T12:48:12Z 置信度 0.78 physics.app-phphysics.optics
• Electrically controlled spin-transistor operation in helical magnetic field
  A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the tr…
  arxiv P. Wójcik, J. Adamowski 2015-12-11T14:19:42Z 置信度 0.78 cond-mat.mes-hall
• Negative differential thermal resistance and thermal transistor
  We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be controlled by small chang…
  arxiv Baowen Li, Lei Wang, Giulio Casati 2004-10-07T09:13:26Z 置信度 0.78 cond-mat.mtrl-scicond-mat.dis-nn
• Strained topological insulator spin field effect transistor
  The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades. These transistors ar…
  arxiv Supriyo Bandyopadhyay 2022-10-24T21:25:36Z 置信度 0.78 cond-mat.mes-hallcond-mat.other
• A Silicon Optical Transistor
  A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an all-optical transist…
  arxiv Leo T. Varghese, Li Fan, Jian Wang, Fuwan Gan 等 2012-04-24T23:39:57Z 置信度 0.78 physics.optics
• Stochastic Thermodynamics of the Two-Dimensional Model of Transistors
  We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance condition. The electric f…
  arxiv Jiayin Gu 2025-01-03T17:37:57Z 置信度 0.78 cond-mat.stat-mech
• Spin torque transistor revisited
  This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin transistors lack the …
  arxiv Takahiro Chiba, Gerrit E. W. Bauer, Saburo Takahashi 2013-03-19T05:52:12Z 置信度 0.78 cond-mat.mes-hall
• Carbon Nanotubes as Schottky Barrier Transistors
  We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for …
  arxiv S. Heinze, J. Tersoff, R. Martel, V. Derycke 等 2002-07-16T15:21:30Z 置信度 0.78 cond-mat.mtrl-sci
• Multiple State EFN Transistors
  Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied to the back gate, a…
  arxiv Gideon Segev, Iddo Amit, Andrey Godkin, Alex Henning 等 2015-02-25T22:38:02Z 置信度 0.78 cs.ETcond-mat.mes-hall
• Graphene-like metallic-on-silicon field effect transistor
  In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional…
  arxiv M. Dragoman, G. Konstantinidis, K. Tsagaraki, T. Kostopoulos 等 2012-02-20T15:23:36Z 置信度 0.78 cond-mat.mes-hall
• Investigating student understanding of bipolar junction transistor circuits
  The research reported in this article represents a systematic, multi-year investigation of student understanding of the behavior of bipolar junction transistor circuits using a variety of different tasks to isolate and probe key aspects of transistor circuit b…
  arxiv Kevin L. Van De Bogart, MacKenzie R. Stetzer 2018-06-01T15:50:16Z 置信度 0.78 physics.ed-ph
• Thermal transistor: Heat flux switching and modulating
  Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors. In particular, we show how to improve significant…
  arxiv Wei Chung Lo, Lei Wang, Baowen Li 2008-03-20T09:20:13Z 置信度 0.78 cond-mat.stat-mech
• Improvement in Retention Time of Capacitorless DRAM with Access Transistor
  In this paper, we propose a Junctionless (JL)/Accumulation Mode (AM) transistor with an access transistor (JL in series with JL/AM transistor) based capacitorless Dynamic Random Access Memory (1TDRAM) cell. The JL transistor overcomes the problem of ultrasharp…
  arxiv Md. Hasan Raza Ansari, Jawar Singh 2019-10-09T11:33:39Z 置信度 0.78 cond-mat.mes-hallcs.IT
• Numerical Analysis of the Stub Transistor
  Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we pres…
  arxiv Alexandre B. Guerra, Edval J. P. Santos 2003-04-08T20:49:32Z 置信度 0.78 cond-mat.mes-hall
• Theory of magnetic bipolar transistors
  The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induc…
  arxiv Jaroslav Fabian, Igor Zutic, S. Das Sarma 2002-11-27T19:53:34Z 置信度 0.78 cond-mat
• Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications
  High germanium content silicon germanium (SiGe) epitaxy is critical for strain engineering in advanced gate all around (GAA) transistors. This paper demonstrates a physics guided exponential function model that quantitatively links selective epitaxial growth (…
  arxiv Zhigang Li, Guobin Bai, Hengwei Cui, Wenlong Yao 等 2026-02-08T11:47:23Z 置信度 0.78 physics.app-ph
• Quantum spin transistors in superconducting circuits
  Transistors play a vital role in classical computers, and their quantum mechanical counterparts could potentially be as important in quantum computers. Where a classical transistor is operated as a switch that either blocks or allows an electric current, the q…
  arxiv N. J. S. Loft, L. B. Kristensen, C. K. Andersen, N. T. Zinner 2018-02-12T19:00:22Z 置信度 0.78 quant-phcond-mat.mes-hallcond-mat.supr-con
• VO 2 -based radiative thermal transistor in the static regime
  We study a near-field radiative thermal transistor analogous to an electronic one made of a VO 2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO 2 exhibits an insulator to metal tr…
  arxiv Hugo Prod'Homme, Jose Ordonez-Miranda, Younes Ezzahri, Jérémie Drevillon 等 2017-10-23T07:46:56Z 置信度 0.78 physics.optics
• Quantum thermal transistors: Operation characteristics in steady state versus transient regimes
  We show that a quantum thermal transistor can also cause the transistor effect - where one out of three terminals can control the flow of heat current in the other two - with good amplification properties in the transient regime for certain paradigmatic initia…
  arxiv Riddhi Ghosh, Ahana Ghoshal, Ujjwal Sen 2020-09-09T18:24:31Z 置信度 0.78 quant-ph
• Realizing high current gain PNP transistors using a novel Surface Accumulation Layer Transistor (SALTran) concept
  In this paper we report a new PNP Surface Accumulation Layer Transistor (SALTran) on SOI which uses the concept of surface accumulation of holes near the emitter contact to significantly improve the current gain. Using two-dimensional simulation, we have evalu…
  arxiv M. Jagadesh Kumar, Vinod Parihar 2010-08-18T05:29:56Z 置信度 0.78 cond-mat.mes-hall
• Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor
  Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors cont…
  arxiv Jie Jiang, Qing Wan, Jia Sun, Wei Dou 等 2012-04-01T06:35:15Z 置信度 0.78 cond-mat.mtrl-sciphysics.chem-ph
• Magnetically Modulated Electrical Switching in an Antiferromagnetic Transistor
  A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr, a van der Waals (vd…
  arxiv Chung-Tao Chou, Eugene Park, Josep Ingla-Aynes, Julian Klein 等 2025-05-13T23:19:19Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph
• Soliton Tunneling Transistor
  We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The current-voltage charac…
  arxiv J. H. Miller,, G. Cardenas, A. Garcia, W. More 等 2001-05-21T18:09:22Z 置信度 0.78 cond-mat.str-el
• Quantum noise minimization in transistor amplifiers
  General quantum restrictions on the noise performance of linear transistor amplifiers are used to identify the region in parameter space where the quantum-limited performance is achievable and to construct a practical procedure for approaching it experimentall…
  arxiv U. Gavish, B. Yurke, Y. Imry 2005-05-27T21:19:02Z 置信度 0.78 cond-mat.othercond-mat.mes-hallquant-ph
• Gold nanoparticle-pentacene memory-transistors
  We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer.…
  arxiv Christophe Novembre, David Guerin, Kamal Lmimouni, Christian Gamrat 等 2008-02-19T11:19:07Z 置信度 0.78 cond-mat.mtrl-sci
• Common environmental effects on quantum thermal transistor
  Quantum thermal transistor is a microscopic thermodynamical device that can modulate and amplify heat current through two terminals by the weak heat current at the third terminal. Here we study the common environmental effects on a quantum thermal transistor m…
  arxiv Yu-qiang Liu, Deng-hui Yu, Chang-shui Yu 2021-09-18T05:52:54Z 置信度 0.78 quant-ph
• A single photoelectron transistor for quantum optical communications
  A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be photo…
  arxiv Hideo Kosaka, Deepak S. Rao, Hans D. Robinson, Prabhakar Bandaru 等 2002-08-30T10:50:35Z 置信度 0.78 quant-ph
• Mixing with the radiofrequency single-electron transistor
  By configuring a radio-frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our implementation we achieve a measu…
  arxiv L. J. Swenson, D. R. Schmidt, J. S. Aldridge, D. K. Wood 等 2005-01-26T07:56:59Z 置信度 0.78 cond-mat.mes-hallcond-mat.supr-con
• Tri-state Buffer: Magnetic Vortex Transistor Based Logic Devices
  Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic vortex transistor and …
  arxiv Sucheta Mondal, Saswati Barman, Anjan Barman 2019-02-21T06:57:41Z 置信度 0.78 cond-mat.mes-hall
• Transistor Switches using Active Piezoelectric Gate Barriers
  This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacito…
  arxiv Raj K. Jana, Arvind Ajoy, Gregory Snider, Debdeep Jena 2015-05-02T23:05:49Z 置信度 0.78 cond-mat.mes-hall
• Klein-tunneling transistor with ballistic graphene
  Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devic…
  arxiv Quentin Wilmart, Salim Berada, David Torrin, V. Hung Nguyen 等 2014-09-22T13:34:05Z 置信度 0.78 cond-mat.mes-hall
• A "Single-Photon" Transistor in Circuit Quantum Electrodynamics
  We introduce a circuit quantum electrodynamical setup for a "single-photon" transistor. In our approach photons propagate in two open transmission lines that are coupled via two interacting transmon qubits. The interaction is such that no photons are exchanged…
  arxiv Lukas Neumeier, Martin Leib, Michael J. Hartmann 2012-11-30T11:28:52Z 置信度 0.78 quant-phcond-mat.supr-con
• Atomic quantum transistor based on swapping operation
  We propose an atomic quantum transistor based on exchange by virtual photons between two atomic systems through the control gate-atom. The quantum transistor is realized in two QED cavities coupled in nano-optical scheme. We have found novel effect in quantum …
  arxiv Sergey A. Moiseev, Sergey N. Andrianov, Eugene S. Moiseev 2011-08-31T08:31:14Z 置信度 0.78 quant-ph
• Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors
  The reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshol…
  arxiv Daniel J. Flees, J. E. Lukens, Siyuan Han 1999-05-06T00:46:56Z 置信度 0.78 cond-mat.mes-hallcond-mat.supr-con
• A Graphene-based Hot Electron Transistor
  We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with st…
  arxiv Sam Vaziri, Grzegorz Lupina, Christoph Henkel, Anderson D. Smith 等 2012-11-13T10:55:49Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Aluminum Single Electron Transistors with Islands Isolated from a Substrate
  The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island with a dielectric subs…
  arxiv V. A. Krupenin, D. E. Presnov, A. B. Zorin, J. Niemeyer 1999-12-10T15:57:44Z 置信度 0.78 cond-mat.mes-hallcond-mat.str-el
• Metal nanoparticle field-effect transistor
  We demonstrate that by means of a local top-gate current oscillations can be observed in extended, monolayered films assembled from monodisperse metal nanocrystals -- realizing transistor function. The oscillations in this metal-based system are due to the occ…
  arxiv Yuxue Cai, Jan Michels, Julien Bachmann, Christian Klinke 2013-02-08T18:55:54Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hall
• Performance of a spin-based insulated gate field effect transistor
  Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spi…
  arxiv Kimberley C. Hall, Michael E. Flatté 2006-03-09T16:35:25Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci