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• Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor
  crossref Zhihong Chen, Damon Farmer, Sheng Xu, Roy Gordon 等 2008-01-25T19:35:26Z 置信度 0.70
• PERFORMANCE EVALUATION OF SOURCE HETEROJUNCTION STRAINED CHANNEL GATE ALL AROUND NANOWIRE TRANSISTOR
  A Gate All Around Nanowire Transistor (GAA NWT) which employs source heterojunction and strained channel is proposed which improves device characteristics. A quantum mechanical transport approach based on nonequilibrium Green's function (NEGF) method in the fr…
  crossref REZA HOSSEINI, MORTEZA FATHIPOUR, RAHIM FAEZ 2012-04-19T12:27:51Z 置信度 0.70
• Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process.
  europepmc 2023 置信度 0.80
• 4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process.
  europepmc 2022 置信度 0.80
• Vertically integrated gate-all-around nano-LED with enhanced radiative efficiency.
  europepmc 2026 置信度 0.80
• Two-Dimensional Semiconductors for Postsilicon Electronics: From Transistors to Integrated Circuits.
  europepmc 2026 置信度 0.80
• Quantitative mechanism separation of single-event transients in nanosheet transistors via TCAD simulation.
  europepmc 2026 置信度 0.80
• Gate-All-Around Nanowire Field-Effect Transistors: A Historical Perspective.
  europepmc 2026 置信度 0.80
• Performance analysis of electrostatic and transport characteristics of underlap-engineered gate-all-around carbon nanotube (CNT) FETs for nanoelectronics circuitry applications.
  europepmc 2026 置信度 0.80
• Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In<sub>2</sub>O<sub>3</sub> FETs.
  europepmc 2026 置信度 0.80
• Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures.
  europepmc 2026 置信度 0.80
• Ferroelectric Gate-All-Around Transistors for 3D-Integrated Electronics and Neuromorphic Vision.
  europepmc 2026 置信度 0.80
• Oxide interface-based polymorphic electronic devices for neuromorphic computing.
  europepmc 2026 置信度 0.80
• Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor.
  europepmc 2026 置信度 0.80
• Design of electronically tunable fractional-order elements based on distributed MOS transistor structures.
  europepmc 2026 置信度 0.80
• Influence of Device Structure and Manufacturing Thermal Budget on Channel Release Module in GAA NSFET and Process Optimization.
  europepmc 2026 置信度 0.80
• Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances.
  europepmc 2026 置信度 0.80
• Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors.
  europepmc 2026 置信度 0.80
• 3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application.
  europepmc 2026 置信度 0.80
• Advancing Nano sheet Transistor Modeling with Gradient based Boosting Machines
  europepmc 2026 置信度 0.80
• Confined growth of armchair MoS<sub>2</sub> nanotubes at the 1-nm limit.
  europepmc 2026 置信度 0.80
• 2D Material light-emitting transistor with a dynamically controllable emission location for optimized waveguide coupling on silicon.
  europepmc 2026 置信度 0.80
• Small polaron-mediated zero differential transconductance of 2D semiconductor/CoFe<sub>2</sub>O<sub>4</sub> heterojunctions for plateau transistor applications.
  europepmc 2026 置信度 0.80
• Label-Free Detection of Thyroid Cancer Biomarkers Using Heterojunction GAA Ferroelectric p-n-i-n TFET Biosensor.
  europepmc 2026 置信度 0.80
• 3-Tier CFET 6T-SRAM with 2D-TMDs channels for Angstrom technology node.
  europepmc 2026 置信度 0.80
• A CNTFET based process variation resilient SRAM design for stable low power and half select free operation.
  europepmc 2026 置信度 0.80
• Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory.
  europepmc 2026 置信度 0.80
• Polarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity.
  europepmc 2026 置信度 0.80
• Dual-Modulated Vertically Stacked Transistors With Fully Laminated Plate-Type Architecture Featuring Nanoscale Channel Length.
  europepmc 2026 置信度 0.80
• Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study.
  europepmc 2026 置信度 0.80
• A DTMOS-Based Memristor Emulator Circuit for Low-Power Biomedical Signal Conditioning.
  europepmc 2026 置信度 0.80
• Photo-Rewritable Ambipolar Organic Electrochemical Synapses with Bidirectional Optical Plasticity for Adaptive Vision in Aqueous Environments.
  europepmc 2026 置信度 0.80
• Micro-LED/van der Waals heterointegration for in-pixel processing display architecture.
  europepmc 2026 置信度 0.80
• Generic logic block based on bias-gated 2D MoS<sub>2</sub> transistors.
  europepmc 2026 置信度 0.80
• Bechgaard Salt-Like Polymers and Their Applications in Organic Electronics.
  europepmc 2026 置信度 0.80
• 2D Materials Powering Neuromorphic Intelligence.
  The exponential demand for energy-efficient and adaptive computing architectures drives the evolution of artificial intelligence (AI) and machine learning (ML). Neuromorphic computing, inspired by biological neural networks, overcomes the limitations of tradit…
  europepmc 2026 置信度 0.80
• Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.
  europepmc 2026 置信度 0.80
• Transport signatures of gate-tunable topological phase transition in ultrathin <i>β</i>-Ag<sub>2</sub>Te.
  europepmc 2026 置信度 0.80
• Impact of material and structural parameters on the performance of advanced low-power CNTFET-based SRAM designs.
  europepmc 2026 置信度 0.80
• Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe<sub>2</sub>) Thin Films for Nanoelectronics.
  europepmc 2026 置信度 0.80
• A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching.
  europepmc 2026 置信度 0.80
• Flexible amplifier with >100-dB voltage gain enabled by intrinsic gain singularity of carbon nanotube transistors.
  europepmc 2026 置信度 0.80
• Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications.
  europepmc 2026 置信度 0.80
• Nano-Power OTA-Based Low-Pass Filter for Ultra-Low-Energy Biomedical Signal Processing.
  europepmc 2026 置信度 0.80
• Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors.
  europepmc 2026 置信度 0.80
• Analytical Solution for the Potential Distribution in the Channel of A Graphene Field-Effect Transistor Validated with a Custom-Fabricated Test Platform.
  europepmc 2026 置信度 0.80
• State-of-the-Art Applications of Field-Effect Transistor Biosensors in Exosome Detection: A Comprehensive Review.
  europepmc 2026 置信度 0.80
• Spectroscopic Signatures of Doping in Thin Films of Semiconducting Single-Walled Carbon Nanotubes.
  europepmc 2026 置信度 0.80
• A high-frequency silicon-graphene-germanium barristor.
  europepmc 2026 置信度 0.80
• An Edible H<sub>2</sub>O<sub>2</sub> Biosensor for Gastrointestinal Metabolites and Peroxidase Enzyme Quantification.
  europepmc 2026 置信度 0.80
• Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture.
  europepmc 2026 置信度 0.80
• Self-aligned imprint lithography process for fabricating indium-gallium- zinc-oxide thin film transistor arrays.
  europepmc 2025 置信度 0.80
• The microwave phase locking in Bloch transistor.
  europepmc 2026 置信度 0.80
• Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors.
  europepmc 2025 置信度 0.80
• Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory.
  europepmc 2026 置信度 0.80
• Strain, Chain, Repeat: Synthesis and Optoelectronic Properties of Poly(Naphthalene Benzene Vinylene)s.
  europepmc 2026 置信度 0.80
• Dopamine-Mediated Analog Control of Electrochromic Reactions Through Organic Electrochemical Transistor.
  europepmc 2026 置信度 0.80
• Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors.
  europepmc 2025 置信度 0.80
• Carrier Mapping in Sub-2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy.
  europepmc 2026 置信度 0.80
• Hybrid-gate MoS<sub>2</sub> 2T0C DRAM for low-power multi-bit storage with high linearity.
  europepmc 2026 置信度 0.80
• Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C-V Investigation.
  europepmc 2025 置信度 0.80
• Dynamic control of molecular transport in MXene transistor membranes.
  europepmc 2025 置信度 0.80
• Gated MoS<sub>2</sub>/SiN nanochannel for tunable ion transport and protein translocation.
  europepmc 2026 置信度 0.80
• Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review.
  europepmc 2026 置信度 0.80
• Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping.
  europepmc 2026 置信度 0.80
• Large Unsaturated Magnetoresistance in Gated MoS<sub>2</sub> Flakes.
  europepmc 2026 置信度 0.80
• Large-scale gate-all-around MoS<sub>2</sub> transistor array through lossless monolithic 3D integration.
  europepmc 2026 置信度 0.80
• Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors.
  europepmc 2026 置信度 0.80
• Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling.
  europepmc 2026 置信度 0.80
• Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin-Film Transistors.
  europepmc 2025 置信度 0.80
• Design of low power and high speed approximate multipliers utilizing current mode 4 to 2 compressors based on CNTFET technology.
  europepmc 2026 置信度 0.80
• Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications.
  europepmc 2026 置信度 0.80
• Standardized quantum transistor block enables differentiable learning on gait dynamics.
  europepmc 2026 置信度 0.80
• Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide.
  europepmc 2025 置信度 0.80
• Imaging the sub-moiré potential using an atomic single electron transistor.
  europepmc 2026 置信度 0.80
• Cross Comparison Between Thermal Cycling and High Temperature Stress on I/O Connection Elements.
  europepmc 2026 置信度 0.80
• Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems.
  The exponential growth of data has exposed the inherent bottlenecks of the von Neumann architecture-specifically its limited computational efficiency and high energy consumption-necessitating an urgent shift toward innovative hardware solutions. Biological per…
  europepmc 2026 置信度 0.80
• Intrinsically stretchable 2D MoS<sub>2</sub> transistors.
  europepmc 2026 置信度 0.80
• The FinFET to Nanosheet Transition: A Critical Enabler for Energy-Efficient AIoT Applications
  europepmc 2025 置信度 0.80
• Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics.
  Low power consumption has become an essential criterion in the development of next-generation electronics, driven by the growing adoption of Internet of Things, wearables, and portable platforms. Oxide semiconductor thin-film transistors (TFTs) have become mos…
  europepmc 2026 置信度 0.80
• TiO<sub>2</sub> nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory.
  europepmc 2026 置信度 0.80
• Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design.
  europepmc 2026 置信度 0.80
• Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel.
  europepmc 2025 置信度 0.80
• A tri-linear quantum dot architecture for semiconductor spin qubits.
  europepmc 2026 置信度 0.80
• High output power low temperature polysilicon thin-film transistor boost converters for large-area sensor and actuator applications.
  europepmc 2026 置信度 0.80
• Dopamine-Mediated Attenuation of OECT-Based Aqueous Artificial Chemical Synapses.
  europepmc 2026 置信度 0.80
• Robust and compact reversible logic gate for low-power and high-performance computing.
  europepmc 2025 置信度 0.80
• Capillary Flow Printing of Submicron Carbon Nanotube Transistors.
  europepmc 2025 置信度 0.80
• Structure-Function Coupling in Pyridyl Triazole Copolymers for Neuromorphic Synaptic Transistors.
  europepmc 2026 置信度 0.80
• A Computational Modeling for Reconfigurable Biosensors.
  europepmc 2026 置信度 0.80
• Dynamically Tunable Pseudo-Enhancement-Load Inverters Based on High-Performance InAlZnO Thin-Film Transistors.
  europepmc 2026 置信度 0.80
• Organic Transistor-Based Neuromorphic Electronics and Their Recent Applications.
  Neuromorphic technologies offer a promising pathway to address the escalating energy demands of artificial intelligence. At the system level, neuromorphic computing seeks to overcome the von Neumann bottleneck by integrating memory and processing, while neurom…
  europepmc 2026 置信度 0.80
• Design and simulation of a p-type dual interbridge treeFET with comprehensive DC, analog/RF, and linearity analysis for CMOS circuit applications.
  europepmc 2026 置信度 0.80
• Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure.
  europepmc 2026 置信度 0.80
• Organic Electrochemical Neurons: Nonlinear Tools for Complex Dynamics.
  europepmc 2025 置信度 0.80
• Research on unit circuits based on cathode modulated vacuum/air channel electron tube.
  europepmc 2026 置信度 0.80
• Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor
  Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into sub-10nm techn…
  arxiv Laixiang Qin, Chunlai Li, Ziang Xie, Yiqun Wei 等 2023-03-31T02:01:13Z 置信度 0.78 physics.app-phcond-mat.mes-hall
• Channel-last gate-all-around nanosheet oxide semiconductor transistors
  As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performance for low-power electronics. In advanced transistor architectures, such as gat…
  arxiv Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron, Amy Siobhan McKeown-Green 等 2025-12-24T18:58:05Z 置信度 0.78 cond-mat.mtrl-sci
• Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
  We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates t…
  arxiv J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton 等 2018-10-08T10:11:01Z 置信度 0.78 physics.app-phcond-mat.mes-hall
• Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor
  We theoretically investigated the readout process of a spin--qubit structure based on a gate-all-around (GAA) transistor. Our study focuses on a logical qubit composed of two physical qubits. Different spin configurations result in different charge distributio…
  arxiv Tetsufumi Tanamoto, Keiji Ono 2025-12-09T01:14:05Z 置信度 0.78 cond-mat.mes-hallquant-ph