半导体与先进封装 · 全部实体（第 85 / 100 页）

本页收录第 8401–8500 条，共 10000 条 · 返回 半导体与先进封装 首页

• Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors
  Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes. However, the drain-current…
  arxiv Juan P. Mendez, Coleman Cariker, Michael Titze, Alex A. Belianinov 等 2026-03-22T02:27:39Z 置信度 0.78 cond-mat.other
• The interface states in gate-all-around transistors (GAAFETs)
  The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation framework based on at…
  arxiv Yue-Yang Liu, Haoran Lu, Zirui Wang, Hui-Xiong Deng 等 2023-08-16T02:20:13Z 置信度 0.78 physics.app-phcond-mat.mtrl-sciphysics.comp-ph
• On Possibility of Using High-Tc Ceramic-Superconductor as Junction-less Transistor towards Nano-miniaturization
  High-Tc Type-II ceramic-superconductor at temperature T < Tc, under presence of magnetic-field B becomes non-superconducting if B exceeds a critical value Bc2. Thus at T < Tc, by application/absence of critical magnetic- field as a controlling device, th…
  arxiv R. C. Gupta, Ruchi Gupta, Sanjay Gupta 2005-07-05T13:24:48Z 置信度 0.78 physics.gen-ph
• Graphene-based field-effect transistor biosensors for the rapid detection and analysis of viruses: A perspective in view of COVID-19
  Current situation of COVID-19 demands a rapid, reliable, cost-effective, facile detection strategy to break the transmission chain and biosensor has emerged as a feasible solution for this purpose. Introduction of nanomaterials has undoubtedly improved the per…
  arxiv Joydip Sengupta, Chaudhery Mustansar Hussain 2020-12-10T09:37:38Z 置信度 0.78 physics.app-phphysics.ins-det
• Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
  Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of indium phosphide (InP…
  arxiv Linqiang Xu, Lianqiang Xu, Qiuhui Li, Shibo Fang 等 2023-08-27T08:42:49Z 置信度 0.78 cond-mat.mtrl-sci
• 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
  To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-l…
  arxiv Shake Karapetyan, Steven E. Zeltmann, Glen Wilk, Ta-Kun Chen 等 2025-07-09T20:22:06Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-ph
• Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design
  In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha part…
  arxiv Albert Lu, Reza Arghavani, Hiu Yung Wong 2025-06-29T23:21:52Z 置信度 0.78 cs.ETphysics.comp-ph
• Valley-Landscape Engineering in Bilayer WSe$_2$ Gate-All-Around Transistors
  The K-$Γ$ valence-band splitting $Δ_{KΓ}$ that governs hole transport in few-layer WSe$_2$ is not a fixed material constant. It is tuned by interlayer stacking, strain, pressure, and the dielectric and displacement-field environment. Its computed value also de…
  arxiv Katsunori Wakabayashi, Souren Adhikary, Kazuhito Tsukagoshi 2026-06-08T02:58:00Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• A spin field effect transistor for low leakage current
  In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomiz…
  arxiv S. Bandyopadhyay, M. Cahay 2004-07-07T17:07:57Z 置信度 0.78 cond-mat.mes-hall
• Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor
  This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53G…
  arxiv Saeed Uz Zaman Khan, Md. Shafayat Hossain, Md. Obaidul Hossen, Fahim Ur Rahman 等 2014-06-20T02:04:20Z 置信度 0.78 cond-mat.mtrl-sci
• Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot
  As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the electrical properti…
  arxiv C. Rohrbacher, J. Rivard, R. Ritzenthaler, B. Bureau 等 2023-12-01T20:08:51Z 置信度 0.78 cond-mat.mes-hallquant-ph
• Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire
  Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable wi…
  arxiv Pushkar Dasika, Debadarshini Samantaray, Krishna Murali, Nithin Abraham 等 2021-02-06T04:22:01Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph
• III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
  In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure …
  arxiv J. J. Gu, X. W. Wang, J. Shao, A. T. Neal 等 2012-12-18T04:04:56Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
  We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatu…
  arxiv J. G. Gluschke, J. Seidl, R. W. Lyttleton, D. J. Carrad 等 2018-09-27T11:58:17Z 置信度 0.78 physics.app-phcond-mat.mes-hall
• Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin Film Transistors
  Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced. Dual-gate and gate-all-aroun…
  arxiv Chankeun Yoon, Juhan Ahn, Yuchen Zhou, Jaydeep P. Kulkarni 等 2025-06-17T03:35:31Z 置信度 0.78 cond-mat.mtrl-sci
• First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
  The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release pro…
  arxiv Jiangjiang Gu, Yiqun Liu, Yanqing Wu, Robert Colby 等 2011-12-15T17:21:27Z 置信度 0.78 cond-mat.mes-hall
• Berry-phase in a periodically driven single molecule magnet transistor
  We consider the electron transport through a single molecule magnet transistor in the presence of a local transverse magnetic field and ac-driven gate voltage. We calculate the conductance as a function of the electron energy and transverse magnetic field by u…
  arxiv Gabriel Gonzalez 2026-05-15T21:05:59Z 置信度 0.78 cond-mat.mes-hall
• A Pseudo 2D-analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET
  In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor (TFET). The model incorp…
  arxiv Rajat Vishnoi, M. Jagadesh Kumar 2014-06-20T14:32:16Z 置信度 0.78 cond-mat.mes-hall
• Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications
  This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications. We consider five ke…
  arxiv Rafael Perez Martinez, Stephen Boyd, Srabanti Chowdhury 2024-06-25T07:49:05Z 置信度 0.78 eess.SY
• Green's function approach to transport through a gate-all-around Si nanowire under impurity scattering
  We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the effects of ionized …
  arxiv J. H. OH, D. Ahn, Y. S. Yu, S. W. Hwang 2007-06-20T07:28:01Z 置信度 0.78 cond-mat.mes-hall
• Are gate-all-around 2D CFETs the optimal architecture for the A2 node and beyond?
  As logic scaling enters the angstrom era, vertically stacked complementary field-effect transistors (CFETs) based on atomically thin two-dimensional (2D) semiconductors offer a potential route to extend device scaling beyond the A2 node. Here, we develop an A2…
  arxiv Fengben Xi, Gautam Gaddemane, Anshul Gupta, Sheng Yang 等 2026-07-14T12:28:49Z 置信度 0.78 physics.app-ph
• Coronavirus RNA Sensor Using Single-Stranded DNA Bonded to Sub-Percolated Gold Films on Monolayer Graphene Field-Effect Transistors
  Electrical detection of messenger ribonucleic acid (mRNA) is a promising approach to enhancing transcriptomics and disease diagnostics because of its sensitivity, rapidity, and modularity. Reported here is a fast SARS-CoV-2 mRNA biosensor (<1 minute) with a…
  arxiv Nicholas E. Fuhr, Mohamed Azize, David J. Bishop 2022-05-10T19:51:02Z 置信度 0.78 q-bio.BM
• Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition
  We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and f…
  arxiv Keiko Takase, Kouta Tateno, Satoshi Sasaki 2021-06-18T10:19:57Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph
• Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
  InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dime…
  arxiv Jiangjiang J. Gu, Heng Wu, Yiqun Liu, Adam T. Neal 等 2012-04-07T18:00:41Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
  In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/μm (near 20 mA/μm) is achieved in a…
  arxiv Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour 等 2022-04-30T22:39:23Z 置信度 0.78 physics.app-phcond-mat.mes-hallcond-mat.mtrl-sci
• Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement
  Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are presented and discussed. Gate-all-around nanosheet device structures with a tot…
  arxiv Daniel Schmidt, Aron Cepler, Curtis Durfee, Shanti Pancharatnam 等 2022-01-12T22:52:28Z 置信度 0.78 physics.app-ph
• Accelerating OTA Circuit Design: Transistor Sizing Based on a Transformer Model and Precomputed Lookup Tables
  Device sizing is crucial for meeting performance specifications in operational transconductance amplifiers (OTAs), and this work proposes an automated sizing framework based on a transformer model. The approach first leverages the driving-point signal flow gra…
  arxiv Subhadip Ghosh, Endalk Y. Gebru, Chandramouli V. Kashyap, Ramesh Harjani 等 2025-02-05T20:48:27Z 置信度 0.78 cs.AR
• 20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
  In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20…
  arxiv J. J. Gu, X. W. Wang, H. Wu, J. Shao 等 2012-12-18T04:10:02Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Quantization of Charge Carriers in Conduction Channels of Si-Based Field-Effect Transistors for Multinary Computation
  The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in conduction channels in…
  arxiv P. Xu, H. Luo 2024-01-26T18:50:48Z 置信度 0.78 cond-mat.mes-hall
• Device-Scale Atomistic Simulations of Heat Transport in Advanced Field-Effect Transistors
  Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect transistors. Built u…
  arxiv Ke Xu, Gang Wang, Ting Liang, Yang Xiao 等 2025-11-24T09:22:20Z 置信度 0.78 cond-mat.mtrl-sci
• High-efficiency single photon emission from a silicon T-center in a nanobeam
  Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a spin ground state tha…
  arxiv Chang-Min Lee, Fariba Islam, Samuel Harper, Mustafa Atabey Buyukkaya 等 2023-08-08T19:17:24Z 置信度 0.78 quant-ph
• Mapping the Design Space of Photonic Topological States via Deep Learning
  Topological states in photonics offer novel prospects for guiding and manipulating photons and facilitate the development of modern optical components for a variety of applications. Over the past few years, photonic topology physics has evolved and unveiled va…
  arxiv Robin Singh, Anuradha Murthy Agarwal, Brian W Anthony 2020-05-19T15:46:53Z 置信度 0.78 physics.app-phphysics.comp-phphysics.optics
• Testing single-photon wave packets by Hong-Ou-Mandel interference
  We discuss characterization of single-photon wave packets by measuring Hong-Ou-Mandel interference with a weak coherent pulse. A complete multimode calculation is presented and effects of multiphoton terms in the coherent field as well as the impact of source …
  arxiv Piotr Kolenderski, Konrad Banaszek 2008-06-16T13:10:17Z 置信度 0.78 quant-ph
• Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries
  The fabrication processes of silicon nitride photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, we show that propagation loss as low as 0.42 dB/cm can be achieved using foundry compati…
  arxiv Xingchen Ji, Yoshitomo Okawachi, Andres Gil-Molina, Mateus Corato-Zanarella 等 2023-01-08T15:07:34Z 置信度 0.78 physics.opticsphysics.app-ph
• Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuit
  The foundry development of integrated photonics has revolutionized today's optical interconnect and datacenters. Over the last decade, we have witnessed the rising of silicon nitride (Si$_3$N$_4$) integrated photonics, which is currently transferring from labo…
  arxiv Zhichao Ye, Haiyan Jia, Zhangjun Huang, Chen Shen 等 2023-03-09T03:07:12Z 置信度 0.78 physics.opticsphysics.app-ph
• Do different kinds of photon-pair sources have the same indistinguishability in quantum silicon photonics?
  In the same silicon photonic integrated circuit, we compare two types of integrated degenerate photon-pair sources (microring resonators or waveguides) by means of Hong-Ou-Mandel (HOM) interference experiments. Two nominally identical microring resonators are …
  arxiv Jong-Moo Lee, Alessio Baldazzi, Matteo Sanna, Stefano Azzini 等 2023-05-17T09:10:35Z 置信度 0.78 quant-phphysics.optics
• Blue Microlasers Integrated on a Photonic Platform on Silicon
  The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The…
  arxiv Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont, Thierry Guillet 等 2019-04-05T14:31:57Z 置信度 0.78 physics.app-ph
• Nano-Cross-Junction Effect on Phonon Transport in Silicon-Nanowire-Cages
  Wave effects of phonons can give rise to controllability of heat conduction beyond that by particle scattering at surfaces and interfaces. In this work, we propose a new class of 3D nanostructure: a silicon-nanowire-cage (SiNWC) structure consisting of silicon…
  arxiv Dengke Ma, Hongru Ding, Han Meng, Lei Feng 等 2015-10-28T04:05:32Z 置信度 0.78 cond-mat.mes-hall
• Indistinguishable photons from an artificial atom in silicon photonics
  Silicon is the ideal material for building electronic and photonic circuits at scale. Spin qubits and integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capab…
  arxiv Lukasz Komza, Polnop Samutpraphoot, Mutasem Odeh, Yu-Lung Tang 等 2022-11-17T02:46:25Z 置信度 0.78 quant-phcond-mat.mes-hallphysics.optics
• Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films
  We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between microcrystalline and amo…
  arxiv Meenakshi Rana, Chandan Banerjee, Papia Chowdhury 2020-11-08T09:06:40Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-ph
• Silicon Quantum Photonics
  Integrated quantum photonic applications, providing physially guaranteed communications security, sub-shot-noise measurement, and tremendous computational power, are nearly within technological reach. Silicon as a technology platform has proven formibable in e…
  arxiv Joshua W. Silverstone, Damien Bonneau, Jeremy L. O'Brien, Mark G. Thompson 2017-07-07T18:52:47Z 置信度 0.78 quant-phphysics.optics
• Roadmapping the Next Generation of Silicon Photonics
  Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions - mainly in the form of communication transce…
  arxiv Sudip Shekhar, Wim Bogaerts, Lukas Chrostowski, John E. Bowers 等 2023-05-25T08:03:31Z 置信度 0.78 physics.opticsphysics.app-ph
• Fast-response silicon photonic microheater induced by parity-time symmetry breaking
  Thermo-optic microheater is indispensable in silicon photonic devices for smart and reconfigurable photonic networks. Much efforts have been made to improve the metallic microheater performance in the past decades. However, because of the metallic nature of li…
  arxiv Yanxian Wei, Junwei Cheng, Yilun Wang, Hailong Zhou 等 2021-06-28T02:48:41Z 置信度 0.78 physics.app-phphysics.optics
• On-chip quantum interference between silicon photon-pair sources
  Large-scale integrated quantum photonic technologies will require the on-chip integration of identical photon sources with reconfigurable waveguide circuits. Relatively complex quantum circuits have already been demonstrated, but few studies acknowledge the pr…
  arxiv Joshua W. Silverstone, Damien Bonneau, Kazuya Ohira, Nob Suzuki 等 2013-04-04T19:57:05Z 置信度 0.78 quant-ph
• Neuromorphic Silicon Photonic Networks
  Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of…
  arxiv Alexander N. Tait, Thomas Ferreira de Lima, Ellen Zhou, Allie X. Wu 等 2016-11-05T00:15:59Z 置信度 0.78 q-bio.NCcs.NEphysics.optics
• Roadmap on Topological Photonics
  Topological photonics seeks to control the behaviour of the light through the design of protected topological modes in photonic structures. While this approach originated from studying the behaviour of electrons in solid-state materials, it has since blossomed…
  arxiv Hannah Price, Yidong Chong, Alexander Khanikaev, Henning Schomerus 等 2022-01-17T10:00:03Z 置信度 0.78 physics.optics
• Low-field carrier mobilities in silicon irradiated to extreme fluences
  The low-field carrier mobilities in <100> silicon were quantified as a function of the 1$\,$MeV neutron-equivalent fluence up to $10^{18}\,$cm$^{-2}$ and for temperatures between 230$\,$K and 260$\,$K. Current measurements were fitted using a mobility mo…
  arxiv I. Bloch, B. Bruers, C. -T. Klein, H. Lacker 等 2026-05-18T15:59:00Z 置信度 0.78 physics.ins-dethep-ex
• Advances in silicon quantum photonics
  Quantum technology is poised to enable a step change in human capability for computing, communications and sensing. Photons are indispensable as carriers of quantum information - they travel at the fastest possible speed and readily protected from decoherence.…
  arxiv Jeremy C. Adcock, Jueming Bao, Yulin Chi, Xiaojiong Chen 等 2022-07-06T13:11:26Z 置信度 0.78 quant-phphysics.optics
• Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal
  We demonstrated sub-wavelength (~111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping at cryogenic temperatures. To estimate the small signal resp…
  arxiv Masato Takiguchi, Atsushi Yokoo, Kengo Nozaki, Muhammad Danang Birowosuto 等 2016-12-12T22:23:00Z 置信度 0.78 physics.optics
• Luneburg lens in silicon photonics
  The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Our technique is sufficiently versatile for making perfect imaging devices on silicon platforms.
  arxiv Andrea Di Falco, Susanne C Kehr, Ulf Leonhardt 2011-01-06T20:56:52Z 置信度 0.78 physics.optics
• Study of Silicon Photomultiplier Performance at Different Temperatures
  Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation…
  arxiv N. Anfimov, D. Fedoseev, A. Rybnikov, A. Selyunin 等 2020-05-21T14:09:31Z 置信度 0.78 physics.ins-dethep-ex
• A silicon photonic modulator neuron
  There has been a recently renewed interest in neuromorphic photonics, a field promising to access pivotal and unexplored regimes of machine intelligence. Progress has been made on isolated neurons and analog interconnects; nevertheless, this renewal has yet to…
  arxiv Alexander N. Tait, Thomas Ferreira de Lima, Mitchell A. Nahmias, Heidi B. Miller 等 2018-12-09T10:57:16Z 置信度 0.78 physics.app-phphysics.optics
• Nanolasers grown on silicon
  Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible growth temperatures hav…
  arxiv Roger Chen, Thai-Truong D. Tran, Kar Wei Ng, Wai Son Ko 等 2011-01-17T20:48:04Z 置信度 0.78 physics.optics
• Nonlinear silicon photonics analyzed with the moment method
  We apply the moment method to nonlinear pulse propagation in silicon waveguides in the presence of two-photon absorption, free-carrier dispersion and free-carrier absorption. The evolution equations for pulse energy, temporal position, duration, frequency shif…
  arxiv Simon Lefrancois, Chad Husko, Andrea Blanco-Redondo, Benjamin J. Eggleton 2014-10-02T00:37:09Z 置信度 0.78 physics.optics
• Compact and Low-Loss PCM-based Silicon Photonic MZIs for Photonic Neural Networks
  We present an optimized Mach-Zehnder Interferometer (MZI) with phase change materials for photonic neural networks (PNNs). With 0.2 dB loss, -38 dB crosstalk, and length of 52 micrometer, the designed MZI significantly improves the scalability and accuracy of …
  arxiv Amin Shafiee, Sanmitra Banerjee, Benoit Charbonnier, Sudeep Pasricha 等 2023-08-18T02:40:12Z 置信度 0.78 cs.ETphysics.app-ph
• Absorbing photonic crystals for thin film photovoltaics
  The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an absorbing planar photonic…
  arxiv O. El Daif, E. Drouard, G. Gomard, X. Meng 等 2010-05-26T16:29:35Z 置信度 0.78 cond-mat.otherphysics.optics
• Integrated microwave photonics
  Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to…
  arxiv David Marpaung, Chris Roeloffzen, Rene Heideman, Arne Leinse 等 2012-11-17T11:31:22Z 置信度 0.78 physics.optics
• Silicon Photonics: The Inside Story
  The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it …
  arxiv Bahram Jalali 2008-09-10T23:48:55Z 置信度 0.78 physics.opticsphysics.ins-det
• Integrated Metasurfaces on Silicon Photonics for Emission Shaping and Holographic Projection
  The emerging applications of silicon photonics in free space, such as LiDARs and quantum photonics, urge versatile emission shaping beyond the capabilities of conventional grating couplers. A platform that offers arbitrary shaping of free-space emission while …
  arxiv Ping-Yen Hsieh, Shun-Lin Fang, Yu-Siang Lin, Wen-Hsien Huang 等 2022-05-21T08:31:50Z 置信度 0.78 physics.opticsphysics.app-ph
• Bright Telecom Spin-Photon Interface in Silicon Photonics
  Silicon is an attractive host for scalable quantum photonics, but the absence of bright telecom-band emitters with optically addressable spin states has limited its use for spin-photon interfaces. Here we demonstrate the Al1-center, an aluminum--carbon defect …
  arxiv Carolina Crosta, Amirehsan Alizadehherfati, Purbita Purkayastha, Kyu-Young Kim 等 2026-07-20T18:35:56Z 置信度 0.78 quant-phphysics.optics
• Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots
  We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The relaxation times depend s…
  arxiv Charles Tahan, Robert Joynt 2013-01-02T16:43:16Z 置信度 0.78 cond-mat.mes-hallquant-ph
• AI-Augmented Photon-Trapping Spectrometer-on-a-Chip on Silicon Platform with Extended Near-Infrared Sensitivity
  We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated silicon photodiodes enhan…
  arxiv Ahasan Ahamed, Htet Myat, Amita Rawat, Lisa N McPhillips 等 2025-08-19T05:26:59Z 置信度 0.78 physics.opticseess.SPphysics.comp-ph
• New-generation silicon photonics beyond the singlemode regime
  The singlemode condition is one of the most important design rules for optical waveguides in guided-wave optics. The reason following the singlemode condition is that higher-order modes might be excited and thus introduce some undesired mode-mismatching loss a…
  arxiv Long Zhang, Shihan Hong, Yi Wang, Hao Yan 等 2021-04-09T08:16:09Z 置信度 0.78 physics.opticsphysics.app-ph
• Localization and delocalization dynamics of photons in linearly coupled cavity arrays
  Localization and delocalization of two photons in an array of cavities are examined. Role of entanglement and relative phase of the initial state in the occurrence of localization or delocalization during time evolution is elucidated.
  arxiv Nilakantha Meher, S. Sivakumar 2016-10-26T10:41:46Z 置信度 0.78 quant-ph
• Enhanced two-photon absorption using true thermal light
  Two-photon excited fluorescence (TPEF) is a standard technique in modern microscopy but still affected by photo-damage of the probe. It was proposed that TPEF can be enhanced by using entangled photons, but has proven to be challenging. Recently it was shown t…
  arxiv Andreas Jechow, Michael Seefeldt, Henning Kurzke, Axel Heuer 等 2013-10-16T08:29:27Z 置信度 0.78 quant-phphysics.optics
• Silicon photonic filters based on cascaded Sagnac loop resonators
  We demonstrate advanced integrated photonic filters in silicon-on-insulator (SOI) nanowires implemented by cascaded Sagnac loop reflector (CSLR) resonators. We investigate mode splitting in these standing-wave (SW) resonators and demonstrate its use for engine…
  arxiv Jiayang Wu, Tania Moein, Xingyuan Xu, David J. Moss 2018-04-24T05:04:57Z 置信度 0.78 physics.app-phphysics.optics
• Refractive uses of layered and two-dimensional materials for integrated photonics
  The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confin…
  arxiv Akshay Singh, Seong Soon Jo, Yifei Li, Changming Wu 等 2020-06-30T10:03:02Z 置信度 0.78 cond-mat.mtrl-sci
• Photon-pair generation in a heterogeneous silicon photonic chip
  Integrated Silicon photonics has played an important role in advancing the applications of quantum information and quantum science. However, due to different material properties, it is challenging to integrate all components with excellent performance based on…
  arxiv Mingwei Jin, Neil MacFarlane, Zhaohui Ma, Yongmeng Sua 等 2022-08-30T02:11:03Z 置信度 0.78 physics.opticsquant-ph
• Ultra-Low-Power Tuning in Hybrid Barium Titanate-Silicon Nitride Electro-Optic Devices on Silicon
  As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becom…
  arxiv J. Elliott Ortmann, Felix Eltes, Daniele Caimi, Norbert Meier 等 2019-11-26T21:02:21Z 置信度 0.78 physics.app-phphysics.optics
• A silicon photonic add-drop filter for quantum emitters
  Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-…
  arxiv Shahriar Aghaeimeibodi, Je-Hyung Kim, Chang-Min Lee, Mustafa Atabey Buyukkaya 等 2019-03-21T18:00:03Z 置信度 0.78 physics.opticscond-mat.mes-hallphysics.app-phquant-ph
• Sub-Volt Silicon-Organic Electrooptic Modulator
  Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators tha…
  arxiv Ran Ding, Tom Baehr-Jones, Woo-Joong Kim, Alexander Spott 等 2010-09-13T09:33:06Z 置信度 0.78 physics.optics
• Optical frequency comb technology for ultra-broadband radio-frequency photonics
  The outstanding phase-noise performance of optical frequency combs has led to a revolution in optical synthesis and metrology, covering a myriad of applications, from molecular spectroscopy to laser ranging and optical communications. However, the ideal charac…
  arxiv Victor Torres-Company, Andrew M. Weiner 2014-03-11T22:59:20Z 置信度 0.78 physics.optics
• Graphene thermal infrared emitters integrated into silicon photonic waveguides
  Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconduc…
  arxiv Nour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin 等 2023-08-08T04:47:59Z 置信度 0.78 physics.opticsphysics.app-ph
• Chirality in non-Hermitian photonics
  Chirality is ubiquitous from microscopic to macroscopic phenomena in physics and biology, such as fermionic interactions and DNA duplication. In photonics, chirality has traditionally represented differentiated optical responses for right and left circular pol…
  arxiv Sunkyu Yu, Xianji Piao, Namkyoo Park 2019-04-26T03:35:18Z 置信度 0.78 physics.optics
• Slow Wave Phenomena in Photonic Crystals
  Slow light in photonic crystals and other periodic structures is associated with stationary points of the photonic dispersion relation, where the group velocity of light vanishes. We show that in certain cases, the vanishing group velocity is accompanied by th…
  arxiv Alex Figotin, Ilya Vitebskiy 2009-10-07T11:28:11Z 置信度 0.78 physics.optics
• Analog Optical Computing Primitives in Silicon Photonics
  Optical computing accelerators may help alleviate bandwidth and power consumption bottlenecks in electronics. We show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation. The…
  arxiv Yunshan Jiang, Peter T. S. DeVore, Bahram Jalali 2015-10-02T04:44:27Z 置信度 0.78 physics.optics
• Integrated Silicon Photonics for High-Speed Quantum Key Distribution
  Integrated photonics offers great potential for quantum communication devices in terms of complexity, robustness and scalability. Silicon photonics in particular is a leading platform for quantum photonic technologies, with further benefits of miniaturisation,…
  arxiv Philip Sibson, Jake E. Kennard, Stasja Stanisic, Chris Erven 等 2016-12-21T17:04:10Z 置信度 0.78 quant-ph
• Analysis of growth of silicon thin films on textured and non-textured surface
  Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged when deposited on t…
  arxiv S. M. Iftiquar, S. N. Riaz, S. Mahapatra 2024-03-14T10:12:00Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-phphysics.optics
• Emerging applications of integrated optical microcombs for analogue RF and microwave photonic signal processing
  We review new applications of integrated microcombs in RF and microwave photonic systems. We demonstrate a wide range of powerful functions including a photonic intensity high order and fractional differentiators, optical true time delays, advanced filters, RF…
  arxiv Xingyuan Xu, Jiayang Wu, Sai T. Chu, Brent E. Little 等 2018-06-25T05:04:35Z 置信度 0.78 physics.app-phphysics.optics
• Demonstration of 4H silicon carbide on aluminum nitride integrated photonics platform
  The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a 1-$μ$m-thick aluminum nit…
  arxiv Jingwei Li, Ruixuan Wang, Lutong Cai, Qing Li 2024-02-06T14:22:56Z 置信度 0.78 physics.opticsphysics.app-ph
• Photoluminescent colour centres on a mainstream silicon photonic foundry platform
  The fabrication of silicon photonic components in commercial CMOS-compatible foundries has revolutionized the impact of silicon photonics on advancing communication, quantum computing and artificial intelligence, due to their benefits of mass production, high …
  arxiv Prosper Dellah Allo, A. Aadhi, Amirhossein Mosaddegh Yengejeh, Hazel Bakajsa 等 2025-03-22T01:58:12Z 置信度 0.78 physics.opticsquant-ph
• Foundry's perspective on laser and SOA module integration with silicon photonics
  Silicon photonic integrated circuit (PIC) builds on the demand for a low cost approach from established silicon-based manufacturing infrastructure traditionally built for electronics. Besides its natural abundance, silicon has desirable properties such as opti…
  arxiv James Y. S. Tan, Shawn Xie Wu, Salih Yanikgonul, Chao Li 等 2024-02-20T06:29:10Z 置信度 0.78 physics.app-phphysics.optics
• Zero-change foundry compatible silicon photonics MEMS optical switch
  Large-scale photonic switches are emerging as essential devices for energy-efficient optical interconnect in data centers and AI/ML clusters as a key enabler for high-bandwidth and low-latency connectivity. Combining micro-electro-mechanical (MEMS) based mecha…
  arxiv Arkadev Roy, Daniel Klawson, Jianheng Luo, Yiyang Zhi 等 2026-08-04T05:23:12Z 置信度 0.78 physics.opticsphysics.app-ph
• Inverse Design of Unitary Transmission Matrices in Silicon Photonic Coupled Waveguide Arrays using a Neural Adjoint Model
  The development of low-loss reconfigurable integrated optical devices enables further research into technologies including photonic signal processing, analogue quantum computing, and optical neural networks. Here, we introduce digital patterning of coupled wav…
  arxiv Thomas W. Radford, Peter R. Wiecha, Alberto Politi, Ioannis Zeimpekis 等 2024-09-26T20:52:28Z 置信度 0.78 physics.opticscond-mat.dis-nncond-mat.mes-hall
• Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics
  Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-Si…
  arxiv Zizheng Li, Bruno Lopez-Rodriguez, Naresh Sharma, Roald van der Kolk 等 2025-07-14T14:16:08Z 置信度 0.78 physics.opticsphysics.app-ph
• Nonlinear Integrated Microwave Photonics
  Harnessing nonlinear optical effects in a photonic chip scale has been proven useful for a number of key applications in optical communications. Microwave photonics can also benefit from the adoption of such a technology, creating a new concept of nonlinear in…
  arxiv David Marpaung, Benjamin J. Eggleton 2013-10-18T03:12:46Z 置信度 0.78 physics.optics
• Entanglement of a nuclear spin qubit register in silicon photonics
  Color centers provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T center in silicon is an emerging spin-photon interface that combines telecom O-band optical transitions and an electron spin in a scalabl…
  arxiv Hanbin Song, Xueyue Zhang, Lukasz Komza, Niccolo Fiaschi 等 2025-04-21T22:29:18Z 置信度 0.78 quant-phcond-mat.mes-hallphysics.optics
• Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
  Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for n…
  arxiv Mateusz T. Mądzik, Arne Laucht, Fay E. Hudson, Alexander M. Jakob 等 2020-06-08T11:25:16Z 置信度 0.78 cond-mat.mes-hallquant-ph
• A Survey on Silicon Photonics for Deep Learning
  Deep learning has led to unprecedented successes in solving some very difficult problems in domains such as computer vision, natural language processing, and general pattern recognition. These achievements are the culmination of decades-long research into bett…
  arxiv Febin P Sunny, Ebadollah Taheri, Mahdi Nikdast, Sudeep Pasricha 2021-01-05T19:35:29Z 置信度 0.78 cs.ETcs.AR
• Silicon Photonics
  crossref Daryl Inniss, Roy Rubenstein 2017-01-07T16:24:04Z 置信度 0.70
• PLENARY: The Future of Silicon Photonics
  crossref Justin Rattner 2013-04-12T17:14:44Z 置信度 0.70
• Silicon Photonics in High Performance Computing
  crossref Michael Watts 2013-04-12T21:24:22Z 置信度 0.70
• Fabless silicon photonics
  crossref 2015-04-07T02:20:01Z 置信度 0.70
• Silicon Photonics for Biosensing Applications
  crossref 2011-12-16T18:37:09Z 置信度 0.70
• Silicon Photonics—e Evolution of Integration
  crossref 2011-12-16T18:37:09Z 置信度 0.70
• The Likely Course of Silicon Photonics
  crossref Daryl Inniss, Roy Rubenstein 2017-01-07T16:24:56Z 置信度 0.70
• Nonlinear Silicon Photonics
  crossref 2026-06-26T23:14:37Z 置信度 0.70
• Introduction to Silicon Photonics
  crossref 2026-06-26T23:14:37Z 置信度 0.70
• Silicon‐On‐Insulator (SOI) Photonics
  crossref 2005-01-28T18:38:41Z 置信度 0.70
• The Route to Market for Silicon Photonics
  crossref Daryl Inniss, Roy Rubenstein 2017-01-07T16:23:29Z 置信度 0.70