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• Wide-bandgap semiconductor of three-dimensional unconventional stoichiometric NaCl2 crystal
  The expanding applications call for novel new-generation wide-bandgap semiconductors. Here, we show that a compound only composed of the ordinary elements Na and Cl, namely three-dimensional NaCl2 crystal, is a wide-bandgap semiconductor. This finding benefits…
  arxiv Siyan Gao, Junlin Jia, Xu Wang, Yue-Yu Zhang 等 2024-06-04T01:44:33Z 置信度 0.78 cond-mat.mtrl-sci
• Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors
  Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting b…
  arxiv Igor A. Khramtsov, Dmitry Yu. Fedyanin 2019-05-12T20:27:03Z 置信度 0.78 physics.app-phcond-mat.mtrl-sci
• An ultra-wide-bandgap semiconductor photodetector for linear measurement of bright sub-bandgap light
  Semiconductor photodetectors are conventionally optimized for sensing weak optical signals, and they typically saturate at low-to-moderate light intensity. Here, we demonstrate sub-bandgap AlN photodetectors that exhibit non-saturating linear response to ultra…
  arxiv Jiahao Dong, Zhenjing Liu, Rafael Jaramillo 2026-06-05T19:35:40Z 置信度 0.78 physics.opticscond-mat.mtrl-sci
• Probing metastable space-charge potentials in a wide bandgap semiconductor
  While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color…
  arxiv Artur Lozovoi, Harishankar Jayakumar, Damon Daw, Ayesha Lakra 等 2020-12-19T23:03:41Z 置信度 0.78 cond-mat.mes-hall
• Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor
  We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room tem…
  arxiv S. -H. Cheng, K. Zou, F. Okino, H. R. Gutierrez 等 2010-05-01T23:41:43Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Spectral Thermal Spreading Resistance of Wide Bandgap Semiconductors in Ballistic-Diffusive Regime
  To develop efficient thermal management strategies for wide bandgap (WBG) semiconductor devices, it is essential to have a clear understanding of the heat transport process within the device and accurately predict the junction temperature. In this paper, we us…
  arxiv Yang Shen, Yu-Chao Hua, Han-Ling Li, S. L. Sobolev 等 2022-01-11T05:30:05Z 置信度 0.78 physics.app-ph
• 2D Nitride Ordered Alloys: A Novel Class of Ultra-Wide Bandgap Semiconductors
  Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency, and temperature ran…
  arxiv Raagya Arora, Ariel R. Barr, Daniel Bennett, Daniel T. Larson 等 2024-05-14T21:13:54Z 置信度 0.78 cond-mat.mtrl-sci
• Effects of excess carriers on native defects in wide bandgap semiconductors: illumination as a method to enhance p-type doping
  Undesired unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation energy of a charged defect depends linearly on the Fermi level, doping limits can be especially pro…
  arxiv Kirstin Alberi, Michael A. Scarpulla 2017-03-10T17:01:26Z 置信度 0.78 cond-mat.mtrl-sci
• Hexagonal boron nitride is an indirect bandgap semiconductor
  Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this material for deep u…
  arxiv G. Cassabois, P. Valvin, B. Gil 2015-12-09T17:35:10Z 置信度 0.78 cond-mat.mtrl-sci
• Topological phase transition in a narrow bandgap semiconductor nanolayer
  Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topol…
  arxiv Zhi-Hai Liu, Wenkai Lou, Kai Chang, H. Q. Xu 2023-10-26T08:39:45Z 置信度 0.78 cond-mat.mes-hall
• Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
  Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is gen…
  arxiv Rodrick Kuate Defo, Alejandro W. Rodriguez, Efthimios Kaxiras, Steven L. Richardson 2022-12-14T18:35:10Z 置信度 0.78 cond-mat.mtrl-sci
• Machine Learning-Assisted Nano-imaging and Spectroscopy of Phase Coexistence in a Wide-Bandgap Semiconductor
  Wide bandgap semiconductors with high room temperature mobilities are promising materials for high-power electronics. Stannate films provide wide bandgaps and optical transparency, although electron-phonon scattering can limit mobilities. In SrSnO3, epitaxial …
  arxiv Alyssa Bragg, Fengdeng Liu, Zhifei Yang, Nitzan Hirshberg 等 2025-07-23T16:38:09Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hall
• Bandgaps and band bowing in semiconductor alloys
  The bandgap and band bowing parameter of semiconductor alloys are calculated with a fast and realistic approach. The method is a dielectric scaling approximation that is based on a scissor approximation. It adds an energy shift to the bandgap provided by the l…
  arxiv Titus Sandu, Radu I. Iftimie 2010-02-12T15:51:58Z 置信度 0.78 cond-mat.mtrl-scicond-mat.other
• Systematic strain-induced bandgap tuning in binary III-V semiconductors from density functional theory
  The modification of the nature and size of bandgaps for III-V semiconductors is of strong interest for optoelectronic applications. Strain can be used to systematically tune the bandgap over a wide range of values and induce indirect-to-direct (IDT), direct-to…
  arxiv Badal Mondal, Ralf Tonner-Zech 2022-08-22T21:00:57Z 置信度 0.78 cond-mat.mtrl-sci
• Electronic bandgap and exciton binding energy of layered semiconductor TiS3
  We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. …
  arxiv Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele, Eduardo Flores 等 2015-09-18T10:27:53Z 置信度 0.78 cond-mat.mes-hall
• Unraveling the defect landscape of wide-bandgap perovskites from electrical and photoelectrical characterization of thin films and solar cells
  Understanding and controlling defect states in halide perovskites is critical to advancing their performance in solar cells, yet their complex defect landscape remains elusive. Charged defects in perovskites can migrate under an applied electric field, complic…
  arxiv L. Kopprio, J. Caram, S. Le Gall, F. Ventosinos 等 2025-10-22T16:00:24Z 置信度 0.78 cond-mat.mtrl-sci
• Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
  The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but…
  arxiv Kaijian Xing, Zherui Yang, Weiyao Zhao, Yuefeng Yin 等 2026-02-07T07:45:44Z 置信度 0.78 cond-mat.mtrl-sci
• Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl
  In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region,…
  arxiv Huiyu Nong, Qinke Wu, Junyang Tan, Yujie Sun 等 2022-02-15T11:10:20Z 置信度 0.78 cond-mat.mtrl-sci
• Unified theory of the direct or indirect bandgap nature of conventional semiconductors
  Although the direct or indirect nature of the bandgap transition is an essential parameter of semiconductors for optoelectronic applications, the understanding why some of the conventional semiconductors have direct or indirect bandgaps remains ambiguous. In t…
  arxiv Lin-Ding Yuan, Hui-Xiong Deng, Shu-Shen Li, Jun-Wei Luo 等 2018-09-17T00:49:43Z 置信度 0.78 cond-mat.mtrl-sci
• Wide elastic wave bandgap metamaterial with single phase constituent
  Accomplishing a wide elastic wave bandgap with single phase constituent is of primary interest in developing phononic metamaterials. In the present article, exploiting spatial periodicity, a single phase lattice is configured towards achieving a large frequenc…
  arxiv Nitish Kumar, Siladitya Pal 2021-10-22T10:28:14Z 置信度 0.78 physics.app-ph
• Bandgap Control in Two-Dimensional Semiconductors via Coherent Doping of Plasmonic Hot Electrons
  Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely tunable bandgap (renor…
  arxiv Yu-Hui Chen, Ronnie R. Tamming, Kai Chen, Zhepeng Zhang 等 2020-03-08T01:10:11Z 置信度 0.78 physics.opticscond-mat.mes-hallquant-ph
• The record low thermal conductivity of monolayer Cuprous Iodide (CuI) with direct wide bandgap
  Two-dimensional materials have attracted lots of research interests due to the fantastic properties that are unique to the bulk counterparts. In this paper, from the state-of-the-art first-principles, we predicted the stable structure of monolayer counterpart …
  arxiv Jinyuan Xu, Ailing Chen, Linfeng Yu, Donghai Wei 等 2022-01-25T20:37:02Z 置信度 0.78 cond-mat.mtrl-sci
• Bonding Hierarchy and Coordination Interaction Leading to High Thermoelectricity in Wide Bandgap TlAgI2
  High thermoelectric properties are associated with the phonon-glass electron-crystal paradigm. Conventional wisdom suggests that the optimal bandgap of semiconductor to achieve the largest power factor should be between 6 and 10 kbT. To address challenges rela…
  arxiv Xiaoying Wang, Mengyang Li, Minxuan Feng, Xuejie Li 等 2024-09-05T03:56:10Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-ph
• Benchmarking bandgap prediction in semiconductors under experimental and realistic evaluation settings
  Accurate bandgap prediction is crucial for semiconductor applications, yet machine learning models trained on computational data often struggle to generalize to experimental bandgap measurements. Challenges related to data fidelity, domain generalization, and …
  arxiv Haolin Wang, Xianyuan Liu, Anna Jungbluth, Alexandra J. Ramadan 等 2026-04-28T12:39:21Z 置信度 0.78 cond-mat.mtrl-scics.AI
• Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors
  Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesti…
  arxiv Ying Liu, Yanjun Fang, Deren Yang, Xiaodong Pi 等 2022-03-08T07:32:13Z 置信度 0.78 physics.app-phcond-mat.mtrl-sci
• Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for Cubic Boron Arsenide
  The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected ban…
  arxiv Hong Zhong, Fengjiao Pan, Shuai Yue, Chengzhen Qin 等 2023-06-13T00:38:37Z 置信度 0.78 cond-mat.mtrl-sciphysics.optics
• Injection-Limited and Space-Charge-Limited Conduction in Wide Bandgap Semiconductors with Velocity Saturation Effect
  Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a two-terminal device remains la…
  arxiv Kok Wai Lee, Yee Sin Ang 2023-08-02T05:41:24Z 置信度 0.78 physics.app-phcond-mat.mes-hallcond-mat.mtrl-sci
• Donor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum Technology Applications
  We propose a quantum science platform utilizing the dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide bandgap semiconductors to realize optically controllable, long-range interactions between defects in the solid state. We carry out calculatio…
  arxiv Anil Bilgin, Ian Hammock, Jeremy Estes, Yu Jin 等 2023-05-09T22:45:13Z 置信度 0.78 quant-phcond-mat.mtrl-sci
• Self-assembled guanine ribbons as wide-bandgap semiconductors
  We present a first principle study about the stability and the electronic properties of a new biomolecular solid-state material, obtained by the self-assembling of guanine (G) molecules. We consider hydrogen-bonded planar ribbons in isolated and stacked config…
  arxiv A. Calzolari, R. Di Felice, E. Molinari, a. Garbesi 2001-10-30T18:20:07Z 置信度 0.78 cond-mat.soft
• Measurement of local optomechanical properties of a direct bandgap 2D semiconductor
  Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local charact…
  arxiv F. Benimetskiy, V. Sharov, P. A. Alekseev, V. Kravtsov 等 2019-05-30T21:46:55Z 置信度 0.78 cond-mat.mes-hall
• Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
  Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semicon…
  arxiv Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu, Weijie Li 等 2021-01-27T15:45:56Z 置信度 0.78 cond-mat.mes-hall
• High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors
  The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room-temperature electron mobilit…
  arxiv Weideng Sun, Junghyun Koo, Donghwan Kim, Hongseung Lee 等 2025-06-30T15:41:09Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-ph
• Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions
  Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced…
  arxiv Janika Tang, Vaibhav Thakore, Tapio Ala-Nissila 2017-03-14T12:59:44Z 置信度 0.78 cond-mat.mtrl-sci
• Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors
  The NV$^-$ color center in diamond has been extensively investigated for quantum sensing, computation, and communication applications. Nonetheless, charge-state decay from the NV$^-$ to its neutral counterpart the NV$^0$ detrimentally affects the robustness of…
  arxiv Rodrick Kuate Defo, Alejandro W. Rodriguez, Steven L. Richardson 2023-07-29T20:44:32Z 置信度 0.78 cond-mat.mtrl-sci
• Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy
  Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material paramet…
  arxiv Wei Yi, Hong Lu, Yong Huang, Michael A. Scarpulla 等 2009-04-15T17:33:58Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
  Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit novel electrical and optical properties and are emerging as a new platform for exploring 2D semiconductor physics. Reduced screening in 2D results in dramatically enhanced electron-electron i…
  arxiv Miguel M. Ugeda, Aaron J. Bradley, Su-Fei Shi, Felipe H. da Jornada 等 2014-04-08T23:19:10Z 置信度 0.78 cond-mat.mes-hall
• Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN
  We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on an Al0.82Ga0.18N me…
  arxiv Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt 等 2024-11-15T20:30:07Z 置信度 0.78 cond-mat.mtrl-sci
• Demonstration of High-Performance Ultra-Wide Bandgap SrSnO$_3$ Top-Gated MOSFETs
  We report the demonstration of high-performance top-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO$_3$ (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited Hf…
  arxiv Junghyun Koo, Weideng Sun, Donghwan Kim, Hongseung Lee 等 2026-02-23T21:55:31Z 置信度 0.78 cond-mat.mtrl-sci
• Three-Photon Absorption Spectra and Bandgap Scaling in Direct-Gap Semiconductors
  This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degen…
  arxiv Sepehr Benis, Claudiu M. Cirloganu, Nicholas Cox, Trenton Ensley 等 2020-05-12T22:32:37Z 置信度 0.78 physics.opticsphysics.app-ph
• Pseudopotential-based full zone k.p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC
  The $k \cdot p$ is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formu…
  arxiv C. Bulutay 2006-10-01T07:19:31Z 置信度 0.78 cond-mat.other
• Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
  Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polariz…
  arxiv Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman 等 2016-08-30T20:37:59Z 置信度 0.78 cond-mat.mtrl-sci
• Thiophene-Tetrathia-Annulene monolayer (TTA-2D): A new 2D semiconductor material with indirect bandgap
  We propose a new 2D semiconductor material (TTA-2D) based on the molecular structure of Thiophene-Tetrathia-Annulene (TTA). The TTA-2D structural, electronic, and optical properties were investigated using \textit{ab initio} methods. Our results show that TTA-…
  arxiv Raphael M. Tromer, Leonardo D. Machado, Cristiano F. Woellner, Douglas S. Galvao 2020-05-01T21:05:24Z 置信度 0.78 cond-mat.mtrl-sci
• Assessing the SCAN functional for deep defects and small polarons in wide-bandgap semiconductors and insulators
  We find the recently developed strongly constrained and appropriately normed (SCAN) functional, now widely used in calculations of many materials, is not able to reliably describe the properties of deep defects and small polarons in a set of wide-bandgap semic…
  arxiv Darshana Wickramaratne, John L. Lyons 2023-11-07T00:43:39Z 置信度 0.78 cond-mat.mtrl-sci
• Size-dependent bandgap and particle size distribution of colloidal semiconductor nanocrystals
  A new analytical expression for the size-dependent bandgap of colloidal semiconductor nanocrystals is proposed within the framework of the finite-depth square-well effective mass approximation in order to provide a quantitative description of the quantum confi…
  arxiv Diego Lourençoni Ferreira, J. C. L. Sousa, R. N. Maronesi, J. Bettini 等 2017-10-03T20:29:23Z 置信度 0.78 cond-mat.mtrl-sci
• Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
  Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ …
  arxiv Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill 等 2023-12-13T20:05:55Z 置信度 0.78 physics.app-ph
• Machine learning for accelerated bandgap prediction in strain-engineered quaternary III-V semiconductors
  Quaternary III-V semiconductors are one of the major promising material classes in optoelectronics. The bandgap and its character, direct or indirect, are the most important fundamental properties determining the performance and characteristics of optoelectron…
  arxiv Badal Mondal, Julia Westermayr, Ralf Tonner-Zech 2023-05-05T16:35:13Z 置信度 0.78 cond-mat.mtrl-sci
• Experimental observation of superluminal group velocities in bulk two-dimensional photonic bandgap crystals
  We have experimentally observed superluminal and infinite group velocities in bulk hexagonal two-dimensional photonic bandgap crystals with bandgaps in the microwave region. The group velocities depend on the polarization of the incident radiation and the air-…
  arxiv D. R. Solli, C. F. McCormick, R. Y. Chiao, J. M. Hickmann 2003-09-13T20:38:17Z 置信度 0.78 quant-ph
• Below-bandgap excitation of bulk semiconductors by twisted light
  I theoretically investigate the response of bulk semiconductors to excitation by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the light's momentum. I show…
  arxiv G. F. Quinteiro 2013-09-12T09:03:59Z 置信度 0.78 cond-mat.mes-hallphysics.optics
• Unveiling two-dimensional electron systems on ultra-wide bandgap semiconductor $\mathrmβ$-Ga$_2$O$_3$
  Ultra-wide bandgap (UWBG) semiconductors promise to revolutionize power electronics, yet a fundamental understanding of their interfacial electronic structure has been hindered by the absence of direct experimental observation. Here, we report the first moment…
  arxiv Ryu Yukawa, Hiroshi Mizuseki, Suryo Santoso Putro, Yé-Jin L. Lee 等 2025-07-22T01:12:37Z 置信度 0.78 cond-mat.mtrl-sci
• Wide Boosting
  Gradient Boosting (GB) is a popular methodology used to solve prediction problems by minimizing a differentiable loss function, $L$. GB performs very well on tabular machine learning (ML) problems; however, as a pure ML solver it lacks the ability to fit model…
  arxiv Michael T. Horrell 2020-07-20T02:54:50Z 置信度 0.78 cs.LGstat.ML
• Accurate theoretical bandgap calculations of II-VI semiconductors
  In this letter we present band gaps of II-VI semiconductors, calculated by the full potential linearized augmented plane wave (FP-LAPW) method with the modified Becke-Johnson (mBJ) potential. The accuracy of the calculated results is assessed by comparing them…
  arxiv Imad Khan, Iftikhar Ahmad, H. A. Rahnamaye Aliabad, M. Maqbool 2012-01-04T10:48:01Z 置信度 0.78 cond-mat.str-elcond-mat.mtrl-sciphysics.comp-ph
• High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
  Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-c…
  arxiv Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe 等 2021-02-11T12:59:09Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hall
• Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
  The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electric fields.…
  arxiv J. Simon, Z. Zhang, K. Goodman, T. Kosel 等 2009-03-17T05:19:00Z 置信度 0.78 cond-mat.mtrl-sci
• Silver Alloyed Wide Bandgap (Ag,Cu)(In,Ga)S2 Thin Film Solar Cells With 15.5% Efficiency
  Sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a wide bandgap semiconductor suitable for the top cell of a tandem solar device. Here we demonstrate significant improvements in absorber quality by alloying with Ag to form (Ag,Cu)(In,Ga)S2 (ACIGS) absorbers. We repo…
  arxiv Yucheng Hu, Ece Washbrook, Arivazhagan Valluvar Oli, Andrea Griesi 等 2025-12-01T09:45:15Z 置信度 0.78 cond-mat.mtrl-sci
• Electronic and Optical Properties of Ultrawide Bandgap Perovskite Semiconductors via First Principles Calculations
  Recent research in ultrawide-bandgap (UWBG) semiconductors has focused on traditional materials such as Ga2O3, AlGaN, AlN, cubic BN, and diamond; however some materials exhibiting single perovskite structure have been known to yield bandgaps above 3.4 eV, such…
  arxiv Radi A. Jishi, Robert J. Appleton, David M. Guzman 2020-09-03T14:44:14Z 置信度 0.78 cond-mat.mtrl-sciphysics.comp-ph
• Colossal optical anisotropy in wide-bandgap semiconductor CuAlO2
  Colossal optical anisotropy in the entire visible spectrum is crucial for advanced photonic applications, enabling precise light manipulation without optical loss across a broad spectral range. Here, we demonstrate that CuAlO2 exhibits colossal optical anisotr…
  arxiv Baekjune Kang, Junhee Shin, Myeongjun Kang, Uksam Choi 等 2024-12-17T09:16:19Z 置信度 0.78 cond-mat.mtrl-sci
• Room-Temperature Noncolinear Ferroelectricity in van der Waals WO$_2$Cl$_2$ with a Wide Bandgap
  Low-dimensional ferroelectrics are attractive for their promising prospects in nanoelectronics. Compared with widely-used ferroelectric perovskites, most low-dimensional ferroelectrics exhibit several inborn weaknesses such as small bandgaps (mostly <2 eV, …
  arxiv Yu Xing, Ning Ding, Zhipeng Wang, Zhiwen Pan 等 2026-06-19T06:39:00Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hall
• Creating and probing wide-bandgap nanoribbon-like structures in a continuous metallic graphene sheet
  The light-like dispersion of graphene monolayer results in many novel electronic properties in it1, however, this gapless feature also limits the applications of graphene monolayer in digital electronics2. A rare working solution to generate a moderate bandgap…
  arxiv Si-Yu Li, Mei Zhou, Jia-Bin Qiao, Wenhui Duan 等 2015-12-21T06:22:17Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sci
• Mode-locking in a semiconductor photonic bandgap laser
  Multimode lasers have a very complex dynamics, as expected when oscillators are nonlinearly coupled. Order emerges when the modes lock together; in this case the coherent superposition of the modes results into a periodic train of pulses or a nearly constant p…
  arxiv Emmanuel Bourgon, Sylvain Combrié, Alexandre Shen, Nicolas Vaissière 等 2025-01-25T15:20:01Z 置信度 0.78 physics.opticsnlin.PS
• Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO$_3$
  Alkaline earth stannates have emerged as promising transparent conducting oxides due to their wide band gaps and high room-temperature electron mobilities. Among them, CaSnO$_3$ possesses the widest band gap, yet reported mobilities vary widely and are highly …
  arxiv Jiayi Gong, Chuanyu Zhang, Wenjie Hu, Jin-Jian Zhou 2025-08-30T01:49:54Z 置信度 0.78 cond-mat.mtrl-sci
• Significant Phonon Drag Effect in Wide Bandgap GaN and AlN
  A thorough understanding of electrical and thermal transport properties of group-III nitride semiconductors is essential for their electronic and thermoelectric applications. Despite extensive previous studies, these transport properties were typically calcula…
  arxiv Yujie Quan, Yubi Chen, Bolin Liao 2023-03-31T23:08:50Z 置信度 0.78 cond-mat.mtrl-sci
• Structural phase transition and bandgap control through mechanical deformation in layered semiconductors 1T-ZrX2 (X = S, Se)
  Applying elastic deformation can tune a material physical properties locally and reversibly. Spatially modulated lattice deformation can create a bandgap gradient, favouring photo-generated charge separation and collection in optoelectronic devices. These adva…
  arxiv Edoardo Martino, David Santos-Cottin, Florian Le Mardele, Konstantin Semeniuk 等 2020-06-12T12:53:20Z 置信度 0.78 cond-mat.mtrl-sci
• Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs
  Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the co…
  arxiv Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker 等 2022-10-13T23:45:37Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-ph
• The NIRSpec Wide GTO Survey
  The Near-infrared Spectrograph (NIRSpec) on the James Webb Space Telescope is uniquely suited to studying galaxies in the distant Universe with its combination of multi-object capabilities and sensitivity over a large range in wavelength (0.6-5.3 microns). Her…
  arxiv Michael V. Maseda, Anna de Graaff, Marijn Franx, Hans-Walter Rix 等 2024-03-08T18:26:38Z 置信度 0.78 astro-ph.GA
• Sodium induced beneficial effects in wide bandgap Cu(In,Ga)S2 solar cell with 15.7% efficiency
  This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high efficiency solar cells. Our findings demonstrate that the synergistic use of Na …
  arxiv Arivazhagan Valluvar Oli, Kulwinder Kaur, Michele Melchiorre, Aubin Jean-Claude Mireille Prot 等 2025-06-16T12:44:32Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-ph
• Indirect to direct bandgap transition in methylammonium lead halide perovskite
  Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-s…
  arxiv Tianyi Wang, Benjamin Daiber, Jarvist M. Frost, Sander A. Mann 等 2016-09-22T15:53:10Z 置信度 0.78 cond-mat.mtrl-sci
• Wide-bandgap optical materials for high-harmonics generation at the nanoscale
  High-order harmonics generation (HHG) is the only process that enables table-top-size sources of extreme-ultraviolet (XUV) light. The HHG process typically involves light interactions with gases or plasma-material phases that hinder wider adoption of such sour…
  arxiv Albert Mathew, Sergey Kruk, Shunsuke Yamada, Kazuhiro Yabana 等 2024-02-01T04:18:50Z 置信度 0.78 physics.optics
• Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
  N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0…
  arxiv Lishu Liu, Zengxia Mei, Yaonan Hou, Huili Liang 等 2014-09-19T13:44:19Z 置信度 0.78 cond-mat.mtrl-sci
• 2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth
  2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. alpha-In2Se3 …
  arxiv Yuxuan Jiang, Xingkun Ning, Renhui Liu, Kepeng Song 等 2026-02-09T08:32:07Z 置信度 0.78 cond-mat.mtrl-sci
• High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors
  Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-D…
  arxiv S. Majdi, M. Gabrysch, N. Suntornwipat, F. Burmeister 等 2019-04-04T14:54:22Z 置信度 0.78 cond-mat.mtrl-sci
• Tuning the optoelectronic properties of wide bandgap perovskites: Data-driven insights from combinatorial synthesis and high-throughput experimentation
  The discovery and optimization of wide-bandgap lead halide perovskites (LHPs) is hindered by solution-based workflows with limited scalability. Large compositional parameter spaces present an additional challenge for materials optimization. Here, we establish …
  arxiv Alexander Wieczorek, Sergey Tsarev, Nathan Rodkey, Oleksandr Pshyk 等 2026-06-26T13:53:02Z 置信度 0.78 cond-mat.mtrl-sci
• Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide
  We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, a…
  arxiv Gaohua Liao, Ning Luo, Ke-Qiu Chen, H. Q. Xu 2016-06-08T16:54:38Z 置信度 0.78 cond-mat.mes-hall
• The Ooty Wide Field Array
  We describe here an ongoing upgrade to the legacy Ooty Radio Telescope (ORT).The ORT is a cylindrical parabolic cylinder 530mx30m in size operating at a frequency of 326.5 (or z ~ 3.35 for the HI 21cm line). The telescope has been constructed on a north-south …
  arxiv C. R. Subrahmanya, P. K. Manoharan, Jayaram. N. Chengalur 2017-03-02T05:03:24Z 置信度 0.78 astro-ph.IMastro-ph.CO
• Coulomb engineering of the bandgap in 2D semiconductors
  The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the interplay between the environme…
  arxiv Archana Raja, Andrey Chaves, Jaeeun Yu, Ghidewon Arefe 等 2017-02-03T23:40:40Z 置信度 0.78 cond-mat.mes-hall
• Hexagonal AlN: Dimensional-Crossover-Driven Bandgap Transition
  Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and monolayer structures of h-Al…
  arxiv C. Bacaksiz, H. Sahin, H. D. Ozaydin, S. Horzum 等 2015-02-20T09:39:58Z 置信度 0.78 cond-mat.mtrl-sci
• A comparative study of semiconductor-based plasmonic metamaterials
  Recent metamaterial (MM) research faces several problems when using metal-based plasmonic components as building blocks for MMs. The use of conventional metals for MMs is limited by several factors: metals such as gold and silver have high losses in the visibl…
  arxiv Gururaj V. Naik, Alexandra Boltasseva 2011-08-07T07:38:04Z 置信度 0.78 physics.opticscond-mat.mtrl-sci
• Wide band gap chalcogenide semiconductors
  Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can…
  arxiv Rachel Woods-Robinson, Yanbing Han, Hanyu Zhang, Tursun Ablekim 等 2019-10-17T20:49:00Z 置信度 0.78 cond-mat.mtrl-sci
• Thermal conversion of ultrathin nickel hydroxide for wide bandgap 2D nickel oxides
  Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emissi…
  arxiv Lu Ping, Nicholas Russo, Zifan Wang, Ching-Hsiang Yao 等 2024-04-15T17:58:40Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hall
• Alloying to Tune the Bandgap of the AM2Pn2 Zintl Compounds
  The AM2Pn2 Zintl compounds are a large class of semiconductor materials that have a wide range of bandgaps and are mostly stable in the same crystal structure. Representative compounds BaCd2P2 and CaZn2P2 have recently been found to exhibit high visible light …
  arxiv Andrew Pike, Zhenkun Yuan, Muhammad Rubaiat Hasan, Smitakshi Goswami 等 2025-09-30T18:06:59Z 置信度 0.78 cond-mat.mtrl-sci
• Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe$_2$
  Bilayers of transition-metal dichalcogenides show many exciting features, including long-lived interlayer excitons and wide bandgap tunability using strain. Not many investigations on experimental determinations of deformation potentials relating changes in op…
  arxiv Indrajeet Dhananjay Prasad, Sumitra Shit, Yunus Waheed, Jithin Thoppil Surendran 等 2024-11-30T11:59:06Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.optics
• Semiconductor diamond
  crossref 2019-06-21T15:38:06Z 置信度 0.70
• Gate drivers for wide bandgap power devices
  crossref Subhashish Bhattacharya 2018-10-26T18:46:49Z 置信度 0.70
• BeMgZnO wide bandgap quaternary alloy semiconductor
  crossref Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür 等 2020-10-01T10:23:35Z 置信度 0.70
• Wide Bandgap Semiconductor Spintronics
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Wide Bandgap Power Semiconductor Packaging
  crossref 2018-06-01T18:40:51Z 置信度 0.70
• Ultra-Wide Bandgap Semiconductor Materials
  crossref 2019-06-21T15:21:18Z 置信度 0.70
• Topological Insulators
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Wide Bandgap Semiconductor Based Micro/Nano Devices
  crossref 2019-04-29T03:17:48Z 置信度 0.70
• Rashba Hamiltonian
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Progress in semiconductor β-Ga2O3
  crossref 2019-06-21T15:37:48Z 置信度 0.70
• Gas sensors based on wide bandgap semiconductors
  crossref Kwang Hyeon Baik, Soohwan Jang 2020-10-01T10:23:35Z 置信度 0.70
• Detection Principles of Wide Bandgap Semiconductor Nuclear Radiation Detectors
  crossref Yuming Zhang, Hui Guo, Jinfeng Zhang, Chiwen Qian 等 2025-09-26T06:33:02Z 置信度 0.70
• Channel engineering of wide bandgap semiconductor based power devices
  crossref Jin Wei 2018-04-19T06:39:54Z 置信度 0.70
• Short circuit robustness of wide bandgap power semiconductor devices
  crossref Jiahui Sun 2023-02-21T22:56:17Z 置信度 0.70
• GaN Band Structure
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Indirect excitons in wide bandgap semiconductor quantum wells
  Excitons indirects dans les puits quantiques de la grande bande interdite Cette thèse est consacrée à l'étude expérimentale des excitons dans des puitsquantiques polaires fabriqués à partir de semi-conducteurs à large bande interdite. En raison de la structure…
  crossref Fedor Fedichkin 2026-04-02T05:57:20Z 置信度 0.70
• Topological Insulators
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• ZnO wide-bandgap semiconductor nanostructures: Growth, characterization and applications
  This article describes the growth, characterization and applications of zinc oxide (ZnO) wide-bandgap semiconductor nanostructures. It first introduces the reader to the basic physics and materials science of ZnO, with particular emphasis on the crystalline st…
  crossref E. McGlynn, M.O. Henry, J.-P. Mosnier 2017-08-09T14:24:11Z 置信度 0.70
• Rashba Hamiltonian
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Back Matter
  crossref 2018-09-04T08:10:05Z 置信度 0.70