半导体与先进封装 · 全部实体（第 11 / 100 页）

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• Self-consistent determination of quantum-mechanical threshold voltage of Gate-All-Around Junction Less Nanowire Transistor
  crossref Nujhat Tasneem, Md. Mohsinur Rahman Adnan, Md. Samzid Bin Hafiz, Quazi D.M. Khosru 2017-02-16T22:32:12Z 置信度 0.70
• NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
  crossref Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe 等 2020-06-30T17:20:26Z 置信度 0.70
• Approximate Analysis of Cylindrical Ferroelectric Capacitor and Derivation of Drain Current Characteristics in Ferroelectric Gate-All-Around Carbon Nanotube Transistor
  Drain current vs gate voltage and drain current vs drain voltage characteristics have been derived in a ferroelectric gate-all-around carbon nanotube (CNT) transistor. An approximate analysis to derive the polarization characteristics in a cylindrical ferroele…
  crossref Masakazu Ibata, Hiroshi Ishiwara 2011-05-20T07:55:09Z 置信度 0.70
• Investigation of Different Strain Configurations in Gate-All-Around Silicon Nanowire Transistor
  The impacts of three different strain configurations on both DC and RF performance of n-type silicon nanowire transistors (n-SNWTs) are investigated. It is found that the longitudinal tensile strain is the most efficient in improving the driving current and RF…
  crossref Quanxin Yun, Jing Zhuge, Ru Huang, Runsheng Wang 等 2010-03-09T23:16:31Z 置信度 0.70
• Ge Condensation Process for High ON/OFF Ratio of SiGe Gate-All-Around Nanowire Tunnel Field-Effect Transistor
  crossref Ryoongbin Lee, Junil Lee, Sangwan Kim, Kitae Lee 等 2019-08-01T23:58:42Z 置信度 0.70
• Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment
  crossref Sangwoo Shin, Beom Seok Kim, Jiwoon Song, Hwanseong Lee 等 2013-05-15T17:04:59Z 置信度 0.70
• Electronic Response of a Gate-All-Around Field Effect Transistor with Two Silicon Nanowires as Active Channels within the Same Insulator Matrix
  crossref Reza Nekovei, Amit Verma 2025-10-31T17:09:57Z 置信度 0.70
• Design and Performance Analysis of Junctionless Vertically Stacked Gate All Around Transistor
  crossref R. Erigela, D. Vemana Chary, D. Venkatarami Reddy, B. Nageshwar Rao 等 2025-03-04T11:56:42Z 置信度 0.70
• A numerical model for solving two dimensional Poisson-Schrödinger equation in depletion all around operation of the SOI four gate transistor
  crossref S. Jahangir, Q.D.M. Khosru 2010-01-26T12:34:26Z 置信度 0.70
• Immunity to random fluctuations induced by interface trap variability in Si gate-all-around n-nanowire field-effect transistor devices
  crossref Akhil Sudarsanan, Kaushik Nayak 2021-04-03T07:02:52Z 置信度 0.70
• Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor
  crossref Yun Young Yeoh, Sung Dae Suk, Ming Li, Kyoung Hwan Yeo 等 2009-07-28T15:38:49Z 置信度 0.70
• Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior
  crossref Mohammad Karbalaei, Daryoosh Dideban, Zeinab Ramezani, Iraj Sadegh Amiri 2021-04-29T18:35:02Z 置信度 0.70
• Efficient Temperature Sensor Based on SOI Gate-All-Around Electrostatically Formed Nanowire Transistor
  crossref K. Shimanovich, Z. Mutsafi, M. Shach-Caplan, E. Pikhay 等 2019-06-12T19:52:27Z 置信度 0.70
• A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals
  crossref Hung-Bin Chen, Shih-Han Lin, Jia-Jiun Wu, Yung-Chun Wu 等 2012-09-07T15:57:32Z 置信度 0.70
• EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION
  By means of the Ramo–Shockley–Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particul…
  crossref A. BENALI, F. L. TRAVERSA, G. ALBAREDA, A. ALARCÓN 等 2012-09-26T04:28:54Z 置信度 0.70
• Tellurium Nanowire Gate-All-Around MOSFETs for Sub5 nm Applications
  crossref 2021-01-07T12:10:35Z 置信度 0.70
• TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap
  crossref Deyuan Xiao, Xi Wang, Yuehui Yu, Jing Chen 等 2009-10-26T08:06:56Z 置信度 0.70
• Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor
  Abstract In this paper, a novel low power consumption device based on a dopingless gate-all-around nanowire tunnel field effect transistor (TFET) with negative capacitance (NC) effect is proposed. NC is a robust approach in solving the bottleneck issues encoun…
  crossref Leo Raj Solay, Naveen Kumar, S Intekhab Amin, Pradeep Kumar 等 2022-08-04T18:15:21Z 置信度 0.70
• Optimization of negative capacitance junctionless gate-all-around field-effect transistor using asymmetric non-local lateral Gaussian doping
  crossref Ying Han, Weifeng Lü, Weijie Wei, Caiyun Zhang 等 2023-03-24T21:00:35Z 置信度 0.70
• Performance Analysis of Gate All Around TFETs for Low Power Circuits
  crossref 2022-09-15T03:35:21Z 置信度 0.70
• Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study
  The steep sub-threshold swing of a tunneling field-effect transistor (TFET) makes it one of the best candidates for low-power nanometer devices. However, the low driving capability of TFETs prevents their application in integrated circuits. In this study, an i…
  crossref Weijie Wei, Weifeng Lü, Ying Han, Caiyun Zhang 等 2022-12-09T10:22:56Z 置信度 0.70
• Double channeled nanotube gate all around field effect transistor with drive current boosted
  crossref Laixiang Qin, He Tian, Chunlai Li, Yiqun Wei 等 2024-03-07T08:24:51Z 置信度 0.70
• Optimization of Gate all-around Junctionless Transistor Using Response Surface Methodology
  crossref R. Ramesh, Adhithan Pon, P. Dinesh Babu, Santhia Carmel 等 2021-03-09T23:41:59Z 置信度 0.70
• A Novel Numerical Modeling for p-type Nanowire Ballistic Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistor
  crossref He Cheng, Zhijia Yang, Chao Zhang, Zhipeng Zhang 2025-10-09T17:50:46Z 置信度 0.70
• Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study
  We conduct an atomic-level investigation on how a Ge atom impacts on the SiGe etching rate. The plasmaless dry-etching process in ClF3 gas is considered in this study. We perform the density functional theory to model the elementary reactions of an etchant mol…
  crossref Yu-Hao Tsai, Mingmei Wang 2021-12-07T13:21:14Z 置信度 0.70
• A Charge-Based Analytical Model for Gate All Around Junction-Less Field Effect Transistor Including Interface Traps
  This article proposes an analytic charge-based model that incorporates interface trapping. The model’s applicability to all operating zones includes various interface trap charges with varying doping concentrations. Using the analytical model, the impact of in…
  crossref Pratikhya Raut, Umakanta Nanda 2022-05-06T18:16:24Z 置信度 0.70
• Performance investigation of SRAM cells based on gate-all-around (GAA) Si nanowire transistor for ultra-low voltage applications
  crossref Jiaojiao Ou, Ru Huang, Yuchao Liu, Runsheng Wang 等 2013-03-01T13:21:40Z 置信度 0.70
• SiGe Channel for Scaled Gate-All-Around Nanosheet pFET Transistor for Advanced Logic Applications
  crossref S. Mochizuki, S. Kumar, A. Greene, K. Killic 等 2026-01-30T21:00:04Z 置信度 0.70
• Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications
  crossref Yogesh Pratap, Rajni Gautam, Subhasis Haldar, R. S. Gupta 等 2016-02-29T10:23:35Z 置信度 0.70
• Fabrication of Three-Side-Around Control Gate of Semi-Floating Gate Transistor
  crossref Shiling Yang, Yanfei Ma, Xueli Zhang, Pengtao Duan 等 2024-05-22T17:32:27Z 置信度 0.70
• Taming the Distribution of Light in Gate-All-Around Semiconductor Devices
  crossref 2024-01-17T18:01:47Z 置信度 0.70
• Radiation effects in gate-all-around silicon nanowire MOSFETs and carbon nanotube p-n diodes
  crossref Everett Comfort 2025-05-28T13:58:07Z 置信度 0.70
• 6-18 GHz High-Efficiency Power Amplifier MMIC Based on Broadband Impedance Matching.
  europepmc 2026 置信度 0.80
• Performance Analysis of Electrostatic and Transport Characteristics of Underlap-Engineered Gate-All- Around Carbon Nanotube (CNT) FETs for Nanoelectronics Circuitry Applications
  europepmc 2026 置信度 0.80
• Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.
  europepmc 2026 置信度 0.80
• A Comprehensive Analytical Study of Subthreshold Swing for Cylindrical Gate-All-Around Junctionless Field Effect Transistor
  The miniaturization of traditional planar Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) becomes quite challenging for very short channel devices as the formation of ultra-sharp source and drain junctions with a high process complexity is needed …
  crossref Imtiaz Ahmed, Quazi D. M. Khosru 2020-02-27T01:15:15Z 置信度 0.70
• Gallium Nitride Gate-All-Around Macaroni Field Effect Transistor (GaN-GAA-MCFET): Biosensor for DNA detection
  crossref Shivani Yadav, Vijay Thakur, Aapurva Kaul, Amit Das 等 2025-05-29T13:06:14Z 置信度 0.70
• Analitical modeling for square gate-all-around MOSFETs
  crossref Enrique Moreno Pérez 2020-12-03T12:39:22Z 置信度 0.70
• Compact modeling of gate-all-around silicon nanowire MOSFETs
  crossref Shihuan Lin 2019-10-03T03:21:41Z 置信度 0.70
• Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor
  Recently, short channel effects (SCE) and power consumption dissipation problems impose tremendous challenges that need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into sub-10…
  crossref Laixiang Qin, Chunlai Li, Yiqun Wei, Ziang Xie 等 2023-06-05T15:38:36Z 置信度 0.70
• Analytical synthesis of an aplanatic two-mirror objective for EUV lithography
  An analytical method for the synthesis of a strictly aplanatic two-mirror projection objective for extreme ultraviolet (EUV) lithography is proposed. The system satisfies Fermat’s principle and the Abbe sine condition. Explicit expressions are derived for the …
  crossref Vladislav V. Druzhin 2026-08-14T17:01:06Z 置信度 0.70
• High-NA in-line projector for EUV lithography
  crossref Tsumoru Shintake 2026-06-12T16:40:15Z 置信度 0.70
• Experimental study of local placement error and its relation to LCDU in 0.33NA EUV lithography
  crossref Wouter M. J. Franssen, Varun D. Kakkar, Claire van Lare, Tasja van Rhee 等 2026-04-09T22:03:26Z 置信度 0.70
• Imaging Performance and Challenges of Hyper NA (0.75 NA) EUV Lithography for Sub-2 nm Nodes
  crossref Yanli Li, Shi Chen 2026-06-02T20:03:17Z 置信度 0.70
• EUV Lithography: There is Still Much to Do
  crossref Harry J. Levinson 2026-01-22T05:03:18Z 置信度 0.70
• Development and Outlook of Extr eme Ultraviolet (EUV) Lithography Technology
  Extreme ultraviolet (EUV) lithography has emerged as a core approach for expanding semiconductor fabrication beyond the boundaries of deep ultraviolet (DUV) patterning. Due to the ever-diminishing reduction of device size, even utilizing multiple patterning te…
  crossref Zhizhong Chen 2026-02-28T10:33:10Z 置信度 0.70
• Advancing DRAM patterning: high-NA EUV lithography for 10nm and beyond node technologies
  crossref Yeeun Han, Yeongchan Cho, Kangjae Lee, Sudeok Kim 等 2026-04-09T22:03:16Z 置信度 0.70
• An exit transmission window for mirrorless EUV and soft-x-ray lithography: hermetically separating a dense superfluorescent gain medium from the vacuum while transmitting the amplified beam
  Background: A mirrorless exposure architecture for extreme-ultraviolet (EUV) and soft-x-ray lithography places a population-inverted superfluorescent gain medium immediately above the wafer and amplifies a mask-patterned seed to resist-level dose without any p…
  crossref Kenji Sato 2026-07-17T11:36:54Z 置信度 0.70
• IBM lithography roadmap: shorter-wavelength lithography, resist and mask requirements to reduce stochastic defects
  crossref Allen Gabor, Martin Burkhardt, Dario Goldfarb, Luciana Meli 等 2026-04-09T22:03:27Z 置信度 0.70
• ASYMMETRIC CO-EVOLUTION IN COMPETING INNOVATION ECOSYSTEMS: EVIDENCE FROM THE DUV–EUV LITHOGRAPHY TRANSITION
  Technological transitions often involve long periods during which incumbent and emerging technologies coexist rather than being quickly replaced. While previous research explains why this coexistence persists, less is known about how competing technologies int…
  crossref Mohammad Nasir Nasiri, Arjan Markus, Jelle van Zundert 2026-04-11T23:41:51Z 置信度 0.70
• 3D-profile-aware SMO for EUV lithography
  crossref Shih-Hsiang Liu, Renier van der Meer, Parul Dhagat 2026-05-28T19:54:43Z 置信度 0.70
• Random 2D metal single patterning capability using 0.55NA EUV lithography
  crossref Nicolas Besset, Dongbo Xu, Vicky Philipsen, Werner Gillijns 等 2026-04-09T22:03:04Z 置信度 0.70
• Hyper-NA at 13.5nm: a natural next step to extend single‑exposure EUV lithography
  crossref Jos Benschop, Jan van Schoot, Gerardo Bottiglieri, Thomas Stammler 等 2026-04-09T22:03:20Z 置信度 0.70
• Hydrogen-Induced Blistering in Mo/Si Multilayer Mirrors for EUV Lithography: Kinetic Monte Carlo Modeling
  crossref Yuriy Sizyuk, Gennady Miloshevsky 2026-08-28T19:11:09Z 置信度 0.70
• Computational lithography solutions to enable robust EUV high-NA stitching
  crossref Rongkuo Zhao, Zun Huang, Yu Feng Wang, Yunbo Liu 等 2026-04-09T22:03:19Z 置信度 0.70
• Free-standing hybrid Zr/NGF filter for high-power EUV purification in EUV lithography
  crossref Myeong Jin Jeong, Ki-bong Nam, Munja Kim, Dong-Wook Shin 等 2026-04-21T23:37:39Z 置信度 0.70
• Benefits of mask3D effects in high-NA and hyper-NA EUV lithography
  crossref Andreas Erdmann, Varun Jadhav, Gerardo Bottiglieri, Christian Schwemmer 等 2026-04-09T22:03:06Z 置信度 0.70
• Blue-X: exploring advanced optical projection lithography below 13.5 nm
  crossref Vivek Bakshi 2026-04-09T22:03:39Z 置信度 0.70
• Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.
  europepmc 2017 置信度 0.80
• Shape- and Element-Sensitive Reconstruction of Periodic Nanostructures with Grazing Incidence X-ray Fluorescence Analysis and Machine Learning.
  europepmc 2021 置信度 0.80
• Effects of excitation laser wavelength on Ly-α and He-α line emission from nitrogen plasmas.
  europepmc 2013 置信度 0.80
• Optical sensing with simultaneous electrochemical control in metal nanowire arrays.
  europepmc 2010 置信度 0.80
• Reactive & Efficient: Organic Azides as Cross-Linkers in Material Sciences.
  europepmc 2020 置信度 0.80
• 3D Nanofabrication of High-Resolution Multilayer Fresnel Zone Plates.
  europepmc 2018 置信度 0.80
• Moore's Law revisited through Intel chip density.
  europepmc 2021 置信度 0.80
• Enabling spatial frequency doubling for sub‑30nm pitch line and space patterning in low‑NA EUV lithography
  crossref Po-Hsiung Chen, Burn-Jeng Lin 2026-02-19T20:08:06Z 置信度 0.70
• High-reflectance short-period multilayers for next-generation lithography and beyond EUV optics
  crossref Marcelo D. Ackermann, Dennis IJpes, Arseniy Baskakov, Andrey E. Yakshin 2026-04-20T17:16:33Z 置信度 0.70
• Evolution of Acetylacetone from Solution to Film in Indium Nitrate Combustion Sol-Gel.
  europepmc 2026 置信度 0.80
• Coherent Tabletop EUV Ptychography of Nanopatterns.
  europepmc 2018 置信度 0.80
• Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology.
  europepmc 2021 置信度 0.80
• U.S.-China Chip War: Export Controls, EUV Lithography, ASML, and China's "Manhattan Project"
  This article argues that the United States–China chip war has evolved from industrial rivalry into a structural contest over the infrastructure of twenty-first-century power. At the center lies the ability to design and manufacture frontier logic semiconductor…
  crossref Victor Habib Lantyer 2026-03-10T10:51:11Z 置信度 0.70
• STCC formula including polarization and M3D effects in high-NA EUV lithography
  crossref Hiroyoshi Tanabe, Moe Sugiyama, Masayuki Shimoda, Atsushi Takahashi 2026-04-09T22:03:02Z 置信度 0.70
• Physics-based digital twins for stochastic lithography
  crossref Hiroshi Fukuda 2026-04-09T22:03:09Z 置信度 0.70
• Inverse design framework for topological quasi phase-only masks in EUV lithography
  crossref Po-Hsun Fang, Pokai Chang, Chaowei Huang, Peichen Yu 2026-02-19T20:08:05Z 置信度 0.70
• Exploiting phase-shifting low-n, low-k absorbers for dense contact hole patterning in EUV lithography
  crossref Chaowei Huang, Pokai Chang, Peichen Yu 2026-02-19T20:08:04Z 置信度 0.70
• Actinic review of EUV masks: Status and recent results of the AIMS EUV system
  crossref Markus R. Weiss, Dirk Hellweg, Markus Koch, Jan Hendrik Peters 等 2015-03-16T22:41:34Z 置信度 0.70
• Development of a standalone zoneplate based EUV mask defect review tool
  crossref Chami Perera 2022-09-15T19:59:42Z 置信度 0.70
• Development of Source System for EUV Lithography.
  crossref Yasuhiko NISHIMURA, Atsushi SAKATA, Hirozumi AZUMA 2011-12-16T04:44:58Z 置信度 0.70
• Development of EUV Lithography Source Based on Laser-Produced Plasma
  crossref 2014-03-25T23:09:02Z 置信度 0.70
• Development of EUV Light Source for Lithography System
  crossref Akira ENDO 2010-01-12T06:02:31Z 置信度 0.70
• Illumination control in lensless imaging for EUV mask inspection and review
  crossref Iacopo Mochi, Hyun-su Kim, Uldis Locans, Atoosa Dejkameh 等 2020-03-23T22:46:14Z 置信度 0.70
• Current Status and Development Activities on EUV Lithography
  crossref Shinji OKAZAKI 2010-01-12T06:02:31Z 置信度 0.70
• AIMS EUV: the actinic aerial image review platform for EUV masks
  crossref Dirk Hellweg, Johannes Ruoff, Alois Herkommer, Joachim Stühler 等 2011-03-25T22:23:54Z 置信度 0.70
• EUV Source for Lithography.
  crossref Kazuaki HOTTA 2011-12-16T04:44:58Z 置信度 0.70
• Actinic review of EUV masks: performance data and status of the AIMS EUV System
  crossref Dirk Hellweg, Sascha Perlitz, Krister Magnusson, Renzo Capelli 等 2016-03-18T20:29:35Z 置信度 0.70
• Actinic review of EUV masks: first results from the AIMS EUV system integration
  crossref Markus R. Weiss, Dirk Hellweg, Jan Hendrik Peters, Sascha Perlitz 等 2014-04-24T21:52:40Z 置信度 0.70
• Coarse-Grained Modeling of EUV Patterning Process Reflecting Photochemical Reactions and Chain Conformations.
  europepmc 2023 置信度 0.80
• Extreme Ultraviolet Lighting Using Carbon Nanotube-Based Cold Cathode Electron Beam.
  europepmc 2022 置信度 0.80
• Investigating the Degradation of EUV Transmittance of an EUV Pellicle Membrane.
  europepmc 2022 置信度 0.80
• Study on ZrSi₂ as a Candidate Material for Extreme Ultraviolet Pellicles.
  europepmc 2023 置信度 0.80
• Comparative Study on Microstructure of Mo/Si Multilayers Deposited on Large Curved Mirror with and without the Shadow Mask.
  europepmc 2023 置信度 0.80
• Investigation of correlative parameters to evaluate EUV lithographic performance of PMMA.
  europepmc 2022 置信度 0.80
• Plasmonic Biosensors with Nanostructure for Healthcare Monitoring and Diseases Diagnosis.
  europepmc 2022 置信度 0.80
• High-Resolution Nanotransfer Printing of Porous Crossbar Array Using Patterned Metal Molds by Extreme-Pressure Imprint Lithography.
  europepmc 2023 置信度 0.80
• Numerical simulation of laser-produced plasma expansion on a droplet surface.
  europepmc 2023 置信度 0.80
• Formation of Multiscale Pattern Structures by Combined Patterning of Nanotransfer Printing and Laser Micromachining.
  europepmc 2023 置信度 0.80
• Review of recent advances in inorganic photoresists.
  europepmc 2020 置信度 0.80
• Large Area Patterning of Highly Reproducible and Sensitive SERS Sensors Based on 10-nm Annular Gap Arrays.
  europepmc 2022 置信度 0.80
• Improved ptychographic inspection of EUV reticles via inclusion of prior information.
  europepmc 2020 置信度 0.80
• A Study on the Resolution and Depth of Focus of ArF Immersion Photolithography.
  europepmc 2022 置信度 0.80