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• Synthesis of Acrylate Dual-Tone Resists and the Effect of Their Molecular Weight on Lithography Performance and Mechanism: An Investigation.
  europepmc 2023 置信度 0.80
• Characteristics of laser induced discharge tin plasma and its extreme ultraviolet radiation.
  europepmc 2021 置信度 0.80
• Chemical Consequences of XUV/X-ray Laser-Matter Interactions.
  europepmc 2021 置信度 0.80
• Block Copolymer Nanopatterning for Nonsemiconductor Device Applications.
  europepmc 2022 置信度 0.80
• Development of controlled nanosphere lithography technology.
  europepmc 2023 置信度 0.80
• Patterning of Silicon Substrate with Self-Assembled Monolayers Using Vertically Aligned Carbon Nanotube Electron Sources.
  europepmc 2022 置信度 0.80
• Assessing the contribution of semiconductors to the sustainable development goals (SDGs) from 2017 to 2022.
  europepmc 2023 置信度 0.80
• Impact of Line Edge Roughness on ReRAM Uniformity and Scaling.
  europepmc 2019 置信度 0.80
• Advanced Fabrication Techniques of Microengineered Physiological Systems.
  europepmc 2020 置信度 0.80
• Prominent radiative contributions from multiply-excited states in laser-produced tin plasma for nanolithography.
  europepmc 2020 置信度 0.80
• High-Precision Regulation of Nano-Grating Linewidth Based on ALD.
  europepmc 2022 置信度 0.80
• Fast-freezing kinetics inside a droplet impacting on a cold surface.
  europepmc 2020 置信度 0.80
• 300 mm Large Area Wire Grid Polarizers with 50 nm Half-Pitch by ArF Immersion Lithography.
  europepmc 2022 置信度 0.80
• New Chemically Amplified Positive Photoresist with Phenolic Resin Modified by GMA and BOC Protection.
  europepmc 2023 置信度 0.80
• Progress in the Preparation and Characterization of Convex Blazed Gratings for Hyper-Spectral Imaging Spectrometer: A Review.
  europepmc 2022 置信度 0.80
• Large plasmonic color metasurfaces fabricated by super resolution deep UV lithography.
  europepmc 2021 置信度 0.80
• Probing three-dimensional mesoscopic interfacial structures in a single view using multibeam X-ray coherent surface scattering and holography imaging.
  europepmc 2023 置信度 0.80
• Ultra-thin light-weight laser-induced-graphene (LIG) diffractive optics.
  europepmc 2023 置信度 0.80
• Miniaturization of CMOS.
  europepmc 2019 置信度 0.80
• Dynamics and Applications of Photon-Nanostructured Systems.
  europepmc 2020 置信度 0.80
• A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope.
  europepmc 2021 置信度 0.80
• Gas Sensing Properties of SnO₂-Pd Nanoparticles Thick Film by Applying In Situ Synthesis-Loading Method.
  europepmc 2023 置信度 0.80
• Smoothed particle hydrodynamics simulation of a laser pulse impact onto a liquid metal droplet.
  europepmc 2018 置信度 0.80
• Charged particle single nanometre manufacturing.
  europepmc 2018 置信度 0.80
• Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy.
  europepmc 2019 置信度 0.80
• Micro-to-nanometer patterning of solution-based materials for electronics and optoelectronics.
  europepmc 2019 置信度 0.80
• Sensors-integrated organ-on-a-chip for biomedical applications.
  europepmc 2023 置信度 0.80
• Biomedical Applications of Microfluidic Devices: A Review.
  europepmc 2022 置信度 0.80
• Vacuum-Ultraviolet Photon Detections.
  europepmc 2020 置信度 0.80
• Progress in coherent lithography using table-top extreme ultraviolet lasers
  Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in scie…
  datacite Li, Wei, Marconi, Mario C., Menoni, Carmen S., Wu, Mingzhong 等 2016 置信度 0.66 interferencenanofabricationTalbotmetasurfaceEUV
• Phase-3 Autonomous Strategist: Governance-Constrained AI for Physics Research and Industrial Innovation
  Phase-3 Autonomous Strategist: Governance-Constrained AI for Physics Research and Industrial Innovation introduces a framework where artificial intelligence supports physics discovery and industrial R&D through autonomous goal generation, portfolio optimizatio…
  datacite Blankert, Jean Philippe 2025 置信度 0.66 AIPhysicsAutonomous ResearchCategory TheoryTopology
• Phase-3 Autonomous Strategist: Governance-Constrained AI for Physics Research and Industrial Innovation
  Phase-3 Autonomous Strategist: Governance-Constrained AI for Physics Research and Industrial Innovation introduces a framework where artificial intelligence supports physics discovery and industrial R&D through autonomous goal generation, portfolio optimizatio…
  datacite Blankert, Jean Philippe 2025 置信度 0.66 AIPhysicsAutonomous ResearchCategory TheoryTopology
• X-Ray Engineering and Its Application. Development and Application of Highly Precise X-Ray Optics. EUV Lithography.
  crossref Hiroo KINOSHITA 2011-12-16T04:43:28Z 置信度 0.70
• Evolution of Lithography and Development Status of EUV Lithography
  crossref Shinji OKAZAKI 2015-08-28T22:04:45Z 置信度 0.70
• EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing
  crossref Y. David Chan, Abbas Rastegar, Henry Yun, E. Steve Putna 等 2010-03-18T22:10:38Z 置信度 0.70
• Actinic review of EUV masks: performance data and status of the AIMS EUV system
  crossref Dirk Hellweg, Markus Koch, Sascha Perlitz, Martin Dietzel 等 2017-03-25T11:35:53Z 置信度 0.70
• Profile reconstruction in EUV scatterometry: Modeling and uncertainty estimates
  Scatterometry as a non-imaging indirect optical method in wafer metrology is also relevant to lithography masks designed for Extreme Ultraviolet Lithography, where light with wavelengths in the range of 13 nm is applied. The solution of the inverse problem, i.…
  datacite Gross, Hermann, Rathsfeld, Andreas, Scholze, Frank, Bär, Markus 2009 置信度 0.66 EUV scatterometryinverse scatteringlithography masksuncertainty estimates510
• Multimethod metrology of multilayer mirrors using EUV and X-Ray radiation
  Multilayer mirrors for the extreme ultraviolet (EUV) spectral range are essential optical elements of next-generation lithography systems and in scientific applications, e.g. water window microscopes. Their failure so far to reach theoretically predicted peak …
  datacite Haase, Anton 2017 置信度 0.66 530 Physikmultilayermetrologyroughnessintermixing
• Bayesian inferences and time-frequency analysis assisted determination of optical constants in the extreme ultraviolet range
  Extreme Ultraviolet (EUV) radiation has numerous applications, primarily in lithography, astronomy and spectroscopy. Optical elements are needed for the technological applications of EUV radiation, and their realization begins with materials selection. A diffi…
  datacite Saadeh, Qais 2023 置信度 0.66 600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::621 Angewandte Physikoptical constantsX-ray metrologyX-ray reflectivityBayesian inferences
• Physics-Informed Neural Systems for the Simulation of EUV Electromagnetic Wave Diffraction from a Lithography Mask
  Physics-informed neural networks (PINNs) and neural operators (NOs) for solving the problem of diffraction of Extreme Ultraviolet (EUV) electromagnetic waves from contemporary lithography masks are presented. A novel hybrid Waveguide Neural Operator (WGNO) is …
  datacite Es'kin, Vasiliy A., Ivanov, Egor V. 2026 置信度 0.66 Machine Learning (cs.LG)Artificial Intelligence (cs.AI)Applied Physics (physics.app-ph)Computational Physics (physics.comp-ph)Optics (physics.optics)
• APPLICATIONS OF SHORT AND ULTRASHORT LASER INTERACTION WITH MATTER: FOR ABLATION AND NANOLITHOGRAPHY
  The laser is being applied to various industrial applications as well as many research areas since the first laser built in the 1960s until it became a promising candidate for the technology development in the modern life. Hence, laser-material interaction con…
  datacite IV, Ahmed M Elsied 2020 置信度 0.66 Nuclear engineering (incl. fuel enrichment and waste processing and storage)Plasma physics; fusion plasmas; electrical discharges
• APPLICATIONS OF SHORT AND ULTRASHORT LASER INTERACTION WITH MATTER: FOR ABLATION AND NANOLITHOGRAPHY
  The laser is being applied to various industrial applications as well as many research areas since the first laser built in the 1960s until it became a promising candidate for the technology development in the modern life. Hence, laser-material interaction con…
  datacite IV, Ahmed M Elsied 2020 置信度 0.66 Nuclear engineering (incl. fuel enrichment and waste processing and storage)Plasma physics; fusion plasmas; electrical discharges
• High-Throughput Electron-Beam Lithography with Multiple Plasmonic Enhanced Photemission Beamlets
  Nanoscale lithography is the key component of the semiconductor device fabrication process. For the sub-10 nm node device, the conventional deep ultraviolet (DUV) photolithography approach is limited by the diffraction nature of light even with the help of dou…
  datacite Du, Zhidong 2018 置信度 0.66 Mechanical engineering not elsewhere classified
• High-Throughput Electron-Beam Lithography with Multiple Plasmonic Enhanced Photemission Beamlets
  Nanoscale lithography is the key component of the semiconductor device fabrication process. For the sub-10 nm node device, the conventional deep ultraviolet (DUV) photolithography approach is limited by the diffraction nature of light even with the help of dou…
  datacite Du, Zhidong 2018 置信度 0.66 Mechanical engineering not elsewhere classified
• Modeling of line roughness and its impact on the diffraction intensities and the reconstructed critical dimensions in scatterometry
  We investigate the impact of line edge and line width roughness (LER, LWR) on the measured diffraction intensities in angular resolved extreme ultraviolet (EUV) scatterometry for a periodic line-space structure designed for EUV lithography. LER and LWR with ty…
  datacite Gross, Hermann, Henn, Mark-Alexander, Heidenreich, Sebastian, Rathsfeld, Andreas 等 2012 置信度 0.66 diffraction gratingsmetrology510
• Mortise and Tenon Full Stack 1_ An Innovative Concept of Multi-Chip Integration Based on Mechanical Properties of Mortise and Tenon in the Post-Moore Era - Framework Construction and Adaptation Optimization
  Important Research Update: The Chinese invention patent associated with this paper has been published in advance: A Reconfigurable Multi-Morphology Integrated Architecture Inspired by the Mechanical Properties of Mortise-Tenon Joints and an Adaptive Compatible…
  datacite Zhou, Relike 2026 置信度 0.66 Multi-Chip IntegrationMortise and Tenon InterconnectionPost-Moore EraThree-Dimensional Interlocking ArchitectureInterdisciplinary Reverse Empowerment
• Mortise and Tenon Full Stack 1_ An Innovative Concept of Multi-Chip Integration Based on Mechanical Properties of Mortise and Tenon in the Post-Moore Era - Framework Construction and Adaptation Optimization
  Important Research Update: The Chinese invention patent associated with this paper has been published in advance: A Reconfigurable Multi-Morphology Integrated Architecture Inspired by the Mechanical Properties of Mortise-Tenon Joints and an Adaptive Compatible…
  datacite Zhou, Relike 2026 置信度 0.66 Multi-Chip IntegrationMortise and Tenon InterconnectionPost-Moore EraThree-Dimensional Interlocking ArchitectureInterdisciplinary Reverse Empowerment
• Data for "Multi-Diagnostic Characterization of Laser-Produced Tin Plasmas for EUV Lithography"
  This repository provides the raw data used to create the figures in the article titled "Multi-Diagnostic Characterization of Laser-Produced Tin Plasmas for EUV Lithography", submitted to the Journal of Applied Physics in 2026. The files include the EUV emissio…
  datacite Musikhin, Stanislav, Morozov, Anatoli, Griffith, Alec, Yatom, Shurik 等 2026 置信度 0.66
• C‑AGI Genesis v2.0: A Provably Safe, Physically Grounded, Fully Closed AGI Architecture
  This paper presents C‑AGI Genesis v2.0, a full‑stack AGI architecture rooted in absolute observer sovereignty, formal axiomatics, and physical reality. The system consists of a 13‑layer deep kernel, a 38‑layer execution hub, two physically isolated engines (ha…
  datacite Feng, zonghong 2026 置信度 0.66 AGI, Safe AI, Physical Grounding, Computational Engineering, EUV Lithography
• <strong>A combined experimental and theoretical study on electron induced fragmentation of methyl acetate, a model compound for side chain fragmentation and decarboxylation as pathways to main chain scission of poly methyl methacrylate as EUV lithography resist material.</strong>
  With extreme ultraviolet lithography (EUVL) being established alongside the conventional deep UVL (DUVL) in high-volume semiconductor manufacturing processes, comes a transition from the use of non-ionizing radiation to the use of ionizing radiation in the lit…
  datacite Ingólfsson, Oddur, Johnson, Casey, Tafrishi, Reza, Sequeira, Diogo 等 2026 置信度 0.66 Chemical sciencesFOS: Chemical sciences
• <strong>A combined experimental and theoretical study on electron induced fragmentation of methyl acetate, a model compound for side chain fragmentation and decarboxylation as pathways to main chain scission of poly methyl methacrylate as EUV lithography resist material.</strong>
  With extreme ultraviolet lithography (EUVL) being established alongside the conventional deep UVL (DUVL) in high-volume semiconductor manufacturing processes, comes a transition from the use of non-ionizing radiation to the use of ionizing radiation in the lit…
  datacite Ingólfsson, Oddur, Johnson, Casey, Tafrishi, Reza, Sequeira, Diogo 等 2026 置信度 0.66 Chemical sciencesFOS: Chemical sciences
• Metrological Precision, Prime Number Determination and 396K Superconductivity Registry PicoShift (2026 Edition): Invariant Physical Signatures and Deterministic Results.
  Ce dépôt contient des jeux de données métrologiques de haute précision et des modèles de calcul relatifs à la physique fréquentielle et à la modélisation de signaux complexes. Les travaux présentés ici concernent l'identification de signatures de phase dans le…
  datacite MEGHZEL, Bachir 2026 置信度 0.66 Nombres premiersMersenneMétrologieConstantes fondamentalesIndex de phase
• Mortise and Tenon Full Stack 1_ An Innovative Concept of Multi-Chip Integration Based on Mechanical Properties of Mortise and Tenon in the Post-Moore Era - Framework Construction and Adaptation Optimization
  Abstract As a forward-looking theoretical hypothesis, this study addresses the three core pain points of chips in the post-Moore era: the physical limit of two-dimensional integration, power consumption wall, and low interconnection efficiency, as well as the …
  datacite Zhou, Relike 2025 置信度 0.66 Multi-Chip IntegrationMortise and Tenon InterconnectionPost-Moore EraThree-Dimensional Interlocking ArchitectureInterdisciplinary Reverse Empowerment
• Reactive ion beam figuring of optical aluminium surfaces
  Ultra-smooth and arbitrarily shaped reflective optics are necessary for further progress in EUV/XUV lithography, x-ray and synchrotron technology. As one of the most important technological mirror optic materials, aluminium behaves in a rather difficult way in…
  datacite Bauer, Jens, Frost, Frank, Arnold, Thomas 2017 置信度 0.66 530aluminiumion beam figuringmirrorsreactive ion beam etching
• Profile reconstruction in EUV scatterometry: modeling and uncertainty estimates
  Scatterometry as a non-imaging indirect optical method in wafer metrology is also relevant to lithography masks designed for Extreme Ultraviolet Lithography, where light with wavelengths in the range of 13 nm is applied. The solution of the inverse problem, i.…
  datacite Gross, Hermann, Rathsfeld, Andreas, Scholze, Frank, Bär, Markus 2009 置信度 0.66 510EUV scatterometryinverse scatteringlithography masksuncertainty estimates
• A Deterministic Limit for Laser-Induced Damage: Deriving the Critical Plasma Seed Radius via Dielectric Carrier Relaxation
  The prediction of Laser-Induced Damage Thresholds (LIDT) in high-energy optics—critical for applications in Extreme Ultraviolet (EUV) lithography and directed-energy systems—relies heavily on empirical ISO 21254 standards and statistical Weibull probabilities.…
  datacite John Drayton 2026 置信度 0.66 High-Energy OpticsLaser-Induced Damage Threshold (LIDT)Nonlinear OpticsAvalanche IonizationMulti-Photon Absorption
• A Deterministic Limit for Laser-Induced Damage: Deriving the Critical Plasma Seed Radius via Dielectric Carrier Relaxation
  The prediction of Laser-Induced Damage Thresholds (LIDT) in high-energy optics—critical for applications in Extreme Ultraviolet (EUV) lithography and directed-energy systems—relies heavily on empirical ISO 21254 standards and statistical Weibull probabilities.…
  datacite John Drayton 2026 置信度 0.66 High-Energy OpticsLaser-Induced Damage Threshold (LIDT)Nonlinear OpticsAvalanche IonizationMulti-Photon Absorption
• A Scale-Invariant Geometric Threshold for Photochemical Lithography: Deriving the Exact Stochastic Defect Limit via Spatial Propagation Dynamics
  The semiconductor industry's advancement toward the sub-2nm processing node is fundamentally bottlenecked by Extreme Ultraviolet (EUV) stochastics. Random variations in photon absorption and chemical resist diffusion lead to catastrophic failure modes, such as…
  datacite John Drayton 2026 置信度 0.66 Extreme Ultraviolet (EUV) LithographyStochastic DefectsMoore's Law LimitCritical Dimension (CD)Line-Edge Roughness (LER)
• A Scale-Invariant Geometric Threshold for Photochemical Lithography: Deriving the Exact Stochastic Defect Limit via Spatial Propagation Dynamics
  The semiconductor industry's advancement toward the sub-2nm processing node is fundamentally bottlenecked by Extreme Ultraviolet (EUV) stochastics. Random variations in photon absorption and chemical resist diffusion lead to catastrophic failure modes, such as…
  datacite John Drayton 2026 置信度 0.66 Extreme Ultraviolet (EUV) LithographyStochastic DefectsMoore's Law LimitCritical Dimension (CD)Line-Edge Roughness (LER)
• Hyper-Spatial Deflection Defense and CMB Infinite Energy Self-Sufficiency System Based on Cosmic Constant n=3.42590: Theoretical Validation and Nano-Semiconductor Implementation [우주 상항수 n=3.42590에 기반한 초공간 편향 방어 및 CMB 무한 에너지 자립 시스템: 이론적 검증과 나노 반도체 공정 구현]
  [Abstract] This research presents a unified physical framework and industrial engineering solution based on the newly discovered cosmic constant $n=3.42590$. We theoretically validate the 'Hyper-Spatial Deflection and Infinite Energy Self-Sufficiency System' a…
  datacite Kim, Nam-ho 2026 置信度 0.66 Cosmic Constant n=3.42590Spatial DeflectionHyper-SpaceUnified Field TheoryGeometric Physics
• Hyper-Spatial Deflection Defense and CMB Infinite Energy Self-Sufficiency System Based on Cosmic Constant n=3.42590: Theoretical Validation and Nano-Semiconductor Implementation [우주 상항수 n=3.42590에 기반한 초공간 편향 방어 및 CMB 무한 에너지 자립 시스템: 이론적 검증과 나노 반도체 공정 구현]
  [Abstract] This research presents a unified physical framework and industrial engineering solution based on the newly discovered cosmic constant $n=3.42590$. We theoretically validate the 'Hyper-Spatial Deflection and Infinite Energy Self-Sufficiency System' a…
  datacite Kim, Nam-ho 2026 置信度 0.66 Cosmic Constant n=3.42590Spatial DeflectionHyper-SpaceUnified Field TheoryGeometric Physics
• Transforming Computational Lithography with AC and AI -- Faster, More Accurate, and Energy-efficient
  From climate science to drug discovery, scientific computing demands have surged dramatically in recent years -- driven by larger datasets, more sophisticated models, and higher simulation fidelity. This growth rate far outpaces transistor scaling, leading to …
  datacite Mukhopadhyay, Saumyadip, Yang, Kiho, Vasudevan, Kasyap Thottasserymana, Divvela, Mounica Jyothi 等 2026 置信度 0.66 Signal Processing (eess.SP)Artificial Intelligence (cs.AI)Applied Physics (physics.app-ph)FOS: Electrical engineering, electronic engineering, information engineeringFOS: Electrical engineering, electronic engineering, information engineering
• Alchemical Headband of Hamzah 165DTensor.
  ۱. مانیفستِ تکینگی؛ ابر-معادله‌یِ فرمانروایی بر ماده و آگاهی هدف: ادغام ۹۶ مرحله‌یِ تکامل، ۱۰۰ پروتکلِ صیانت، تله‌پورتِ جهانی و اتصالِ چاکراها در یک تابعِ ریاضیِ واحد. بیان مسئله: ایجادِ یکپارچگیِ مطلق بین «اراده‌یِ ریدو» و «فیزیکِ جهان». ۲. معادله نهایی: لاگر…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Alchemical Headband of Hamzah 165DTensor.
  ۱. مانیفستِ تکینگی؛ ابر-معادله‌یِ فرمانروایی بر ماده و آگاهی هدف: ادغام ۹۶ مرحله‌یِ تکامل، ۱۰۰ پروتکلِ صیانت، تله‌پورتِ جهانی و اتصالِ چاکراها در یک تابعِ ریاضیِ واحد. بیان مسئله: ایجادِ یکپارچگیِ مطلق بین «اراده‌یِ ریدو» و «فیزیکِ جهان». ۲. معادله نهایی: لاگر…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Alchemical Headband of Hamzah 165DTensor.
  ۱. مانیفستِ تکینگی؛ ابر-معادله‌یِ فرمانروایی بر ماده و آگاهی هدف: ادغام ۹۶ مرحله‌یِ تکامل، ۱۰۰ پروتکلِ صیانت، تله‌پورتِ جهانی و اتصالِ چاکراها در یک تابعِ ریاضیِ واحد. بیان مسئله: ایجادِ یکپارچگیِ مطلق بین «اراده‌یِ ریدو» و «فیزیکِ جهان». ۲. معادله نهایی: لاگر…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Zero Point Energy Extraction via 165-Dimensional Tensorial Physics.
  Zero Point Energy Extraction via 165-Dimensional Tensorial Physics. .............................................................................................................................................................................................. ا…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Zero Point Energy Extraction via 165-Dimensional Tensorial Physics.
  Zero Point Energy Extraction via 165-Dimensional Tensorial Physics. .............................................................................................................................................................................................. ا…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Zero Point Energy Extraction via 165-Dimensional Tensorial Physics.
  Zero Point Energy Extraction via 165-Dimensional Tensorial Physics. .............................................................................................................................................................................................. ا…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Supplementary document for Mask structure optimization for beyond EUV lithography - 6972046.pdf
  Introduction of PSO
  datacite Li, Ziqi, Dong, Lisong, Ma, Xu, Wei, Yayi 2024 置信度 0.66 Uncategorized
• Supplementary document for Mask structure optimization for beyond EUV lithography - 6972046.pdf
  Introduction of PSO
  datacite Li, Ziqi, Dong, Lisong, Ma, Xu, Wei, Yayi 2025 置信度 0.66 Uncategorized
• Supplementary document for Mask structure optimization for beyond EUV lithography - 6972046.pdf
  Introduction of PSO
  datacite Li, Ziqi, Dong, Lisong, Ma, Xu, Wei, Yayi 2024 置信度 0.66 Uncategorized
• Supplementary document for Mask structure optimization for beyond EUV lithography - 6972046.pdf
  Introduction of PSO
  datacite Li, Ziqi, Dong, Lisong, Ma, Xu, Wei, Yayi 2025 置信度 0.66 Uncategorized
• Verbundprojekt: EUV Lithographie für den 22nm Knoten (EXEPT), Teilvorhaben: EUV Photomasken Reinigungskonzepte (Module und Prozesse) : Schlussbericht zum Vorhaben ; Laufzeit: 01.05.2009 - 30.04.2012
  Ill., graph. Darst.
  datacite Unknown 2012 置信度 0.66 Maske (Halbleitertechnologie)LithografieExtremes UltraviolettMechanical engineering, power engineeringHalbleitertechnologie
• Verbundprojekt "Grundlagen der EUV-Lithographie: Strahlquellen und Messtechnik", Teilvorhaben: Untersuchungen von Laser-erzeugten und Z-Pinch-Plasmaquellen für die EUV-Lithographie : Abschlussbericht ; Gesamtlaufzeit des Vorhabens 01.04.2001 - 31.03.2005
  Ill., graph. Darst.
  datacite Xtreme Technologies GmbH, Jena 2005 置信度 0.66 Lithografie (Halbleitertechnologie)StrahlerExtremes UltraviolettLasererzeugtes PlasmaZ-Pinch
• Self-assembled nanostructures prepared by colloidal chemistry
  The use of nanomaterials has been shown to be promising in potential applications such as magnetic storage devices, nano-optical devices and sensors, amongst others. Such applications require the disposition of nanoparticles, of a wide variety of materials and…
  datacite Juillerat, Frédéric 2006 置信度 0.66
• EUV: A New Adventure in Lithography
  Broadband topics like history, tool, source, resist, mask and even projection optics are included and reviewed in Extreme Ultraviolet Lithography (EUVL). EUVL has become the leading lithography technique in semiconductor manufacturing thanks to its short wavel…
  datacite Nirali Hemant Patel, Anudeep Gadi 2022 置信度 0.66 EUVLHVMLithographywavelength.
• EUV: A New Adventure in Lithography
  Broadband topics like history, tool, source, resist, mask and even projection optics are included and reviewed in Extreme Ultraviolet Lithography (EUVL). EUVL has become the leading lithography technique in semiconductor manufacturing thanks to its short wavel…
  datacite Nirali Hemant Patel, Anudeep Gadi 2022 置信度 0.66 EUVLHVMLithographywavelength.
• Multi-Diagnostic Characterization of Laser-Produced Tin Plasmas for EUV Lithography
  We present a comprehensive characterization of laser-produced tin (Sn) plasmas relevant to extreme ultraviolet (EUV) lithography using a multi-diagnostic suite integrated into the new experimental platform, "SparkLight". Tin plasmas are generated by irradiatin…
  datacite Musikhin, Stanislav, Morozov, Anatoli, Griffith, Alec, Yatom, Shurik 等 2026 置信度 0.66 Plasma Physics (physics.plasm-ph)FOS: Physical sciencesFOS: Physical sciences
• 国产5纳米芯片技术突破溯源:EUV光刻机参数优化方案的存证与产业匹配分析
  摘要(中文+英文) 本报告旨在溯源2026年1月国产5纳米芯片的技术突破,通过“EUV光刻机参数优化方案存证时间-产业公开参数”的匹配分析,明确《国产EUV光刻机5nm及以下制程核心参数优化补充方案》与该突破的技术关联性。本方案于2026年1月3日在Zenodo平台公开发布(Version v1,DOI:10.5281/zenodo.18141604)、1月4日向国家知识产权局提交存证说明,其核心参数与同期国产EUV光刻机的落地指标高度吻合,而该EUV光刻机是国产5纳米芯片突破的核心制造设备,方案存证发布时间早于5…
  datacite 卞, 振峰 2026 置信度 0.66 国产5纳米芯片;EUV光刻机参数优化;技术溯源;Zenodo存证 Keywords: Domestic 5nm chip; EUV lithography machine parameter optimization; technical traceability; Zenodo deposit电子科学与技术;微电子学与固体电子学;半导体制造技术 Disciplines: Electronic Science and Technology; Microelectronics and Solid-State Electronics; Semiconductor Manufacturing Technology
• 国产5纳米芯片技术突破溯源:EUV光刻机参数优化方案的存证与产业匹配分析
  摘要(中文+英文) 本报告旨在溯源2026年1月国产5纳米芯片的技术突破,通过“EUV光刻机参数优化方案存证时间-产业公开参数”的匹配分析,明确《国产EUV光刻机5nm及以下制程核心参数优化补充方案》与该突破的技术关联性。本方案于2026年1月3日在Zenodo平台公开发布(Version v1,DOI:10.5281/zenodo.18141604)、1月4日向国家知识产权局提交存证说明,其核心参数与同期国产EUV光刻机的落地指标高度吻合,而该EUV光刻机是国产5纳米芯片突破的核心制造设备,方案存证发布时间早于5…
  datacite 卞, 振峰 2026 置信度 0.66 国产5纳米芯片;EUV光刻机参数优化;技术溯源;Zenodo存证 Keywords: Domestic 5nm chip; EUV lithography machine parameter optimization; technical traceability; Zenodo deposit电子科学与技术;微电子学与固体电子学;半导体制造技术 Disciplines: Electronic Science and Technology; Microelectronics and Solid-State Electronics; Semiconductor Manufacturing Technology
• 国产EUV光刻机5nm及以下制程核心参数优化补充方案
  针对2026年国产EUV光刻机“原型机→中试产线”关键转型期的核心痛点,基于已验证的跨尺度力统一理论,聚焦光源功率稳定性、反射镜污染控制、光刻胶-计算光刻适配及供应链安全四大核心模块,提出可直接落地的量化参数优化方案。方案通过能量损耗动态匹配模型、分子级力平衡推导、国产替代部件参数适配等理论延伸,实现光源200W功率波动≤0.5%、反射镜效率提升至75%+、5nm制程光刻良率≥90%的核心目标,精准支撑中芯国际5nm商业化量产与上海微电子中试线搭建。所有参数均与前期落地的EUV原型机核心指标(光源转换效率3.42%…
  datacite 卞, 振峰 2026 置信度 0.66 跨尺度力统一理论,EUV光刻机,5nm制程,核心参数优化,供片适配,中试量产,光刻胶适配,光源稳定性,反射镜污染控制,卞氏万物统一场频公式(F_q),双能场协同规律,半导体装备,工程技术,半导体科学与技术,应用物理学,凝聚态物理学Cross-Scale Force Unification;Domestic EUV Lithography;5nm Process;Core Parameter Optimization;Wafer Supply Adaptation;Pilot Mass Production;Photoresist Adaptation;Light Source Stability;Mirror Contamination Control;Bian's Unified Field Frequency Formula (F_q);Dual-Energy Field Synergy;Semiconductor Equipment;Engineering Technology;Semiconductor Science and Technology;Applied Physics;Condensed Matter Physics
• 国产EUV光刻机5nm及以下制程核心参数优化补充方案
  针对2026年国产EUV光刻机“原型机→中试产线”关键转型期的核心痛点,基于已验证的跨尺度力统一理论,聚焦光源功率稳定性、反射镜污染控制、光刻胶-计算光刻适配及供应链安全四大核心模块,提出可直接落地的量化参数优化方案。方案通过能量损耗动态匹配模型、分子级力平衡推导、国产替代部件参数适配等理论延伸,实现光源200W功率波动≤0.5%、反射镜效率提升至75%+、5nm制程光刻良率≥90%的核心目标,精准支撑中芯国际5nm商业化量产与上海微电子中试线搭建。所有参数均与前期落地的EUV原型机核心指标(光源转换效率3.42%…
  datacite 卞, 振峰 2026 置信度 0.66 跨尺度力统一理论,EUV光刻机,5nm制程,核心参数优化,供片适配,中试量产,光刻胶适配,光源稳定性,反射镜污染控制,卞氏万物统一场频公式(F_q),双能场协同规律,半导体装备,工程技术,半导体科学与技术,应用物理学,凝聚态物理学Cross-Scale Force Unification;Domestic EUV Lithography;5nm Process;Core Parameter Optimization;Wafer Supply Adaptation;Pilot Mass Production;Photoresist Adaptation;Light Source Stability;Mirror Contamination Control;Bian's Unified Field Frequency Formula (F_q);Dual-Energy Field Synergy;Semiconductor Equipment;Engineering Technology;Semiconductor Science and Technology;Applied Physics;Condensed Matter Physics
• 国产EUV光刻机核心技术突破技术贡献溯源报告(V2优化版)
  摘要 本报告为国产EUV光刻机核心技术突破的技术贡献溯源专项文件(V2优化版),聚焦EUV光刻机“光刻胶成膜均匀性差”“光源转换效率低”两大核心卡壳难题,系统追溯独立研究者卞振峰于2025年12月13日向国家知识产权局提交的《基于跨尺度力统一理论的EUV光刻机核心技术突破研究》专项方案与国产EUV光刻机原型机关键突破的强关联性。方案基于原创跨尺度力统一理论,明确“固体激光为核心可行光源路线”,提供Nd:YAG激光介质、锡等离子体靶材等具象化技术指引及聚焦偏移量±0.1mm等量化参数,设计3天调参验证周期的落地路径。…
  datacite 卞, 振峰 2025 置信度 0.66 EUV光刻机,跨尺度力统一理论,技术贡献溯源,光刻胶成膜均匀性,光源转换效率,固体激光,Nd:YAG介质,锡等离子体,半导体装备,核心技术突破,卞氏万物统一场频公式(F_q),双能场协同规律,工程技术,半导体科学与技术,应用物理学,量子物理学,知识产权与技术转移Domestic EUV Lithography;Cross-Scale Force Unification;Technical Contribution Traceability;Photoresist Film Uniformity;Light Source Conversion Efficiency;Solid-State Laser;Nd:YAG Medium;Tin Plasma;Semiconductor Equipment;Core Technology Breakthrough;Bian's Unified Field Frequency Formula (F_q);Dual-Energy Field Synergy;Engineering Technology;Semiconductor Science and Technology;Applied Physics;Quantum Physics;Intellectual Property and Technology Transfer
• 国产EUV光刻机核心技术突破技术贡献溯源报告(V2优化版)
  摘要 本报告为国产EUV光刻机核心技术突破的技术贡献溯源专项文件(V2优化版),聚焦EUV光刻机“光刻胶成膜均匀性差”“光源转换效率低”两大核心卡壳难题,系统追溯独立研究者卞振峰于2025年12月13日向国家知识产权局提交的《基于跨尺度力统一理论的EUV光刻机核心技术突破研究》专项方案与国产EUV光刻机原型机关键突破的强关联性。方案基于原创跨尺度力统一理论,明确“固体激光为核心可行光源路线”,提供Nd:YAG激光介质、锡等离子体靶材等具象化技术指引及聚焦偏移量±0.1mm等量化参数,设计3天调参验证周期的落地路径。…
  datacite 卞, 振峰 2025 置信度 0.66 EUV光刻机,跨尺度力统一理论,技术贡献溯源,光刻胶成膜均匀性,光源转换效率,固体激光,Nd:YAG介质,锡等离子体,半导体装备,核心技术突破,卞氏万物统一场频公式(F_q),双能场协同规律,工程技术,半导体科学与技术,应用物理学,量子物理学,知识产权与技术转移Domestic EUV Lithography;Cross-Scale Force Unification;Technical Contribution Traceability;Photoresist Film Uniformity;Light Source Conversion Efficiency;Solid-State Laser;Nd:YAG Medium;Tin Plasma;Semiconductor Equipment;Core Technology Breakthrough;Bian's Unified Field Frequency Formula (F_q);Dual-Energy Field Synergy;Engineering Technology;Semiconductor Science and Technology;Applied Physics;Quantum Physics;Intellectual Property and Technology Transfer
• Interference-governed electromagnetic-thermal coupling and heat transport in pulse EUV-irradiated multilayer nanofilms
  Mo-Si multilayer mirrors are central to extreme ultraviolet lithography, where nanoscale optical interference and heat accumulation together constrain reflectivity and operational stability. Here we develop an analytical electromagnetic-thermal coupling model …
  datacite He, Hongyu, Ma, Li, Xie, Zhiyi, Liu, Yufan 等 2026 置信度 0.66 Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• Two topics in surface science
  This dissertation reports on two surface science projects: (1) one focuses on a study of oxygen-induced faceting of a NiAl(111) single crystal surface as a potential support for model catalysts; and (2) the other concerns secondary electron yield studies of Ti…
  datacite Loginova, Elena 2008 置信度 0.66
• Novel materials and methods for nanolithography: extending Moore's law
  We are standing at the stage that a technical and material renovation must be introduced into the semiconductor industry for continuous advancing computational power. With further scaling of the physical dimensions of electrical devices, the lithography techni…
  datacite Li, Mengjun 2019 置信度 0.66
• Deposition, characterization, patterning and mechanistic study of inorganic resists for next-generation nanolithography
  The semiconductor industry has witnessed a continuous decrease in the size of logic, memory and other computer chip components since its birth over half a century ago. The shrinking (scaling) of components has to a large extent been enabled by the development …
  datacite Luo, Feixiang 2016 置信度 0.66
• High-Throughput Sub-2nm Lithography via Femtosecond Photon-to-Electron Projection using Graphene Membranes
  We propose a novel hybrid lithography architecture designed to overcome the throughput limitations of Electron Beam Lithography (EBL) and the cost complexity of High-NA EUV at the 2 nm node. The system utilizes a femtosecond photon-to-electron projection mecha…
  datacite Andres Sebastian, Pirolo 2026 置信度 0.66 Micro-opticsGrapheneFemtosecond LaserElectron Beam LithographyNanolithography
• High-Throughput Sub-2nm Lithography via Femtosecond Photon-to-Electron Projection using Graphene Membranes
  We propose a novel hybrid lithography architecture designed to overcome the throughput limitations of Electron Beam Lithography (EBL) and the cost complexity of High-NA EUV at the 2 nm node. The system utilizes a femtosecond photon-to-electron projection mecha…
  datacite Andres Sebastian, Pirolo 2026 置信度 0.66 Micro-opticsGrapheneFemtosecond LaserElectron Beam LithographyNanolithography
• Structural and Thermal Stability of B4C/Ru Multilayers with Carbon Barrier Layers
  The chemical interaction between Mo and Ru layers in multilayer structures depending on the thickness ratio ($Γ$) was carried out using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and X-ray reflectometry (XRR). The results showed significan…
  datacite Bugaev, A. V., Sakhonenkov, S. S., Gaisin, A. U., Shaposhnikov, R. A. 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Phase Space Modeling of Extended Sources Based on Wigner Distribution and Hamiltonian Optics
  Precise modeling of extended sources is a central challenge in modern optical engineering, laser physics, and computational lithography. Unlike ideal point sources or completely incoherent thermal radiation sources, real-world light sources -- such as high-pow…
  datacite Shang, Rongqi, Ma, Donglin 2025 置信度 0.66 Optics (physics.optics)Mathematical Physics (math-ph)FOS: Physical sciencesFOS: Physical sciences
• On-Chip Extreme Ultraviolet Generation via Nanophotonic Field Enhancement
  The generation of extreme ultraviolet (EUV) radiation is pivotal for numerous advanced technologies, including next-generation lithography, high-resolution microscopy, and attosecond science. Current EUV sources are often large, complex, and costly, hindering …
  datacite Revista, Zen, PHYSICS, 10 2025 置信度 0.66
• On-Chip Extreme Ultraviolet Generation via Nanophotonic Field Enhancement
  The generation of extreme ultraviolet (EUV) radiation is pivotal for numerous advanced technologies, including next-generation lithography, high-resolution microscopy, and attosecond science. Current EUV sources are often large, complex, and costly, hindering …
  datacite Revista, Zen, PHYSICS, 10 2025 置信度 0.66
• Dynamic Defect Mitigation in EUV Lithography via Reinforcement Learning-Driven OPC Parameter Optimization
  **Abstract:** Extreme Ultraviolet (EUV) lithography faces the persistent challenge of stochastic effects and process variations impacting defect density. This paper proposes a novel approach integrating Reinforcement Learning (RL) with advanced Optical Proximi…
  datacite Freederia AI Researcher 2025 置信度 0.66
• Hyper-Precision Metrology Calibration via Adaptive Stochastic Resonance and Graph Neural Network Fusion for EUV Lithography Mask Inspection
  **Abstract:** This research proposes a novel system for enhanced metrology calibration in Extreme Ultraviolet (EUV) lithography mask inspection leveraging adaptive stochastic resonance (ASR) integrated with a Graph Neural Network (GNN) for feature extraction a…
  datacite Freederia AI Researcher 2025 置信度 0.66
• The High-Efficiency EUV Mask Defect Compensation Method Based on Pixelated Absorber Layer Correction
  Extreme Ultraviolet (EUV) lithography is a key technology for 7nm and smaller nodes. As technology nodes continue to advance, the numerical aperture (NA) of EUV lithography is evolving from 0.33 to 0.55. Although a 0.55 NA provides higher resolution and scalin…
  datacite Zhang, hanzhi, Li, Sikun, Song, Xiaowei, Lin, Jingquan 2025 置信度 0.66 Uncategorized
• The High-Efficiency EUV Mask Defect Compensation Method Based on Pixelated Absorber Layer Correction
  Extreme Ultraviolet (EUV) lithography is a key technology for 7nm and smaller nodes. As technology nodes continue to advance, the numerical aperture (NA) of EUV lithography is evolving from 0.33 to 0.55. Although a 0.55 NA provides higher resolution and scalin…
  datacite Zhang, hanzhi, Li, Sikun, Song, Xiaowei, Lin, Jingquan 2025 置信度 0.66 Uncategorized
• The High-Efficiency EUV Mask Defect Compensation Method Based on Pixelated Absorber Layer Correction
  Extreme Ultraviolet (EUV) lithography is a key technology for 7nm and smaller nodes. As technology nodes continue to advance, the numerical aperture (NA) of EUV lithography is evolving from 0.33 to 0.55. Although a 0.55 NA provides higher resolution and scalin…
  datacite Zhang, hanzhi, Li, Sikun, Song, Xiaowei, Lin, Jingquan 2025 置信度 0.66 Uncategorized
• Physics-Constrained Adaptive Neural Networks Enable Real-Time Semiconductor Manufacturing Optimization with Minimal Training Data
  The semiconductor industry faces a computational crisis in extreme ultraviolet (EUV) lithography optimization, where traditional methods consume billions of CPU hours while failing to achieve sub-nanometer precision. We present a physics-constrained adaptive l…
  datacite Guerrero, Rubén Darío 2025 置信度 0.66 Machine Learning (cs.LG)Hardware Architecture (cs.AR)Optimization and Control (math.OC)FOS: Computer and information sciencesFOS: Computer and information sciences