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• Towards long-coherence polaron qubits in rare-earth doped quartz: a 3D-scalable quantum memory candidate
  We propose a novel qubit platform based on controlled Holstein polarons in erbium-doped α-quartz (SiO2), leveraging the natural crystalline order and piezoelectric properties of the substrate. Using density-functional perturbation theory (DFPT) and open-quantu…
  datacite PREZAT, PASCAL 2025 置信度 0.66
• Towards long-coherence polaron qubits in rare-earth doped quartz: a 3D-scalable quantum memory candidate
  We propose a novel qubit platform based on controlled Holstein polarons in erbium-doped α-quartz (SiO2), leveraging the natural crystalline order and piezoelectric properties of the substrate. Using density-functional perturbation theory (DFPT) and open-quantu…
  datacite PREZAT, PASCAL 2025 置信度 0.66
• Tracking the cross-linking mechanism of a metal-organic EUV photoresist using GISAXS
  Extreme ultraviolet (EUV) lithography has entered high-volume manufacturing enabling the production of integrated circuits with few tens of nanometer sized features on wafers. However, the exposure mechanism of EUV photoresists is still not completely understo…
  datacite Chen, Ying-Lin, Govaerts, Robbe, Holzmeier, Fabian, Yu, Chien-Hsun 2028 置信度 0.66 A26-2-1016BM26
• Emission enhancement and debris mitigation of laser-plasma x-ray light sources for EUV lithography
  datacite University of California Office of the President 2024 置信度 0.66
• Laser-produced plasma ion energy and expansion dynamics for EUV lithography
  datacite University of California Office of the President 2024 置信度 0.66
• Laser-produced plasma light source for EUV lithography
  The semiconductor industry is currently developing a new lithographic technology that will carry it into the future, enabling the printing of features with 30 nm or smaller size. Laser-plasma is a leading candidate for the light source needed to produce the Ex…
  datacite University of California Office of the President 2024 置信度 0.66
• Laser-produced plasma light source for EUV lithography
  The semiconductor industry is currently developing new lithographic technologies that will carry it into the future, enabling the printing of features with 30 nm or smaller size. Laser-plasma is a leading candidate for the light source needed to produce the Ex…
  datacite University of California Office of the President 2024 置信度 0.66
• Lattice design of a storage-ring-based light source for generating high-power fully coherent EUV radiation
  We present the physical design and systematic optimization of a high-performance storage ring tailored for the generation of high-power coherent radiation, with particular emphasis on the extreme ultraviolet (EUV) regime. The proposed ring adopts a Double Bend…
  datacite Lu, Yujie, Liu, Ao, Li, Changliang, Wang, Kun 等 2025 置信度 0.66 Accelerator Physics (physics.acc-ph)FOS: Physical sciencesFOS: Physical sciences
• Experimental study on soft X-ray generation via Inverse Compton Scattering at CERN
  This study explores the feasibility of using Compton Backscattering (CBS) as a compact source for generating photons in the extreme ultraviolet (EUV) to soft X-ray range, with potential applications in biological imaging and modern lithography. A CBS experimen…
  datacite Musat,Vlad, Latina,Andrea, Granados,Eduardo, Martinez-Calderon,Miguel 等 2025 置信度 0.66 Accelerator Physicsmc2-photon-sources-and-electron-accelerators - MC2: Photon Sources and Electron AcceleratorsMC2.A26 - MC2.A26 Compton sources
• Development for various applications at compact ERL as a high-power CW SRF linac in KEK
  It is about “Development for Various Application at Compact ERL as a high-current CW SRF linac in KEK”. As an introduction, the author will talk about the merit of the superconducting RF (SRF) cavity and also talk about our applied research based on Compact ER…
  datacite Yamamoto,Masahiro 2025 置信度 0.66 Accelerator Physicsmc7-accelerator-technology-and-sustainability - MC7: Accelerator Technology and SustainabilityMC7.T06 - MC7.T06 Normal Conducting RF
• Verbundprojekt Grundlagen der EUV-Lithographie - Maske und Prozess, Teilvorhaben: Maskenprozess für die EUV-Lithographie : Forschungsbericht ; [Laufzeit: 01.11.2001 - 30.04.2005]
  Ill., graph. Darst.
  datacite Unknown 2006 置信度 0.66 Electrical engineering
• Stochastic effects in EUV Lithography Symposium on "Computational/Analytical approach for lithographic processes"
  datacite De Bisschop, Peter, Biafore, John, Vaglio-Pret, Alex 2025 置信度 0.66
• The Lithography Race of NIL vs. EUV: The need for T-ray Nanometrology
  datacite Rahman, Anis 2024 置信度 0.66
• Advancing nanoscale patterning : photoresist characterization and colloidal assembly for EUV lithography
  Advancing nanofabrication requires both high-resolution patterning techniques and accessible tools for material testing. Extreme ultraviolet (EUV) lithography, enabled by short-wavelength light, offers the resolution needed for next-generation devices but face…
  datacite Flores, Ethan Fermin, 0009-0006-1649-3091 2025 置信度 0.66 NanostructuresSelf-AssemblyMicrostructuresNanoparticlesExtreme ultraviolet lithography
• Atomic Tin Data
  crossref I. Tolstikhina, S. Churilov, A. Ryabtsev, K. Koshelev 2010-11-09T23:48:49Z 置信度 0.70
• Next-generation lithography – an outlook on EUV projection and nanoimprint
  crossref Jan van Schoot, Helmut Schift 2018-04-27T14:42:29Z 置信度 0.70
• Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning
  crossref Adam Lyons, Ranganath Teki, John Hartley 2012-03-23T13:24:08Z 置信度 0.70
• Progress report: Engineers take the EUV lithography challenge
  crossref Noreen Harned 2008-01-29T21:47:42Z 置信度 0.70
• Plasma etch solutions for EUV patterning: defect challenges
  crossref Noel Sun, Naveed Ansari, Ratndeep Srivastava, Yoshie Kimura 等 2021-02-19T17:10:41Z 置信度 0.70
• Photolithography reaches 6 nm half-pitch using EUV light
  crossref Daniel Fan, Yasin Ekinci 2016-03-18T20:29:35Z 置信度 0.70
• Directional and selective patterning of Ni for next generation EUV absorber (Conference Presentation)
  crossref Xia Sang, Jane P. Chang 2021-12-28T16:34:53Z 置信度 0.70
• Characterization of CNT based pellicles for EUV lithography
  crossref Márcio Dias Lima, Takahiro Ueda, Tetsuo Harada, Mary Graham 等 2022-05-26T17:45:20Z 置信度 0.70
• Energy effective dual-pulse bispectral laser for EUV lithography
  crossref A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov 等 2016-03-19T00:29:35Z 置信度 0.70
• Evolution in the concentration of activities in lithography
  crossref Harry J. Levinson 2016-06-20T22:58:19Z 置信度 0.70
• Quantitative phase retrieval for EUV photomasks
  crossref Stuart Sherwin, Isvar A. Cordova, Ryan Miyakawa, Laura Waller 等 2020-03-23T22:46:19Z 置信度 0.70
• A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks
  crossref Shushuke Yoshitake, Sara Fernandez, Iacopo Mochi, Patrick Helfenstein 等 2018-03-20T14:30:22Z 置信度 0.70
• Investigation of novel inorganic resist materials for EUV lithography
  crossref Marie E. Krysak, James M. Blackwell, Steve E. Putna, Michael J. Leeson 等 2014-04-17T16:38:15Z 置信度 0.70
• Surface characterization of optics for EUV lithography
  The surface topography of optics fabricated for Extreme Ultraviolet Lithography has been measured using a combination of phase-measuring interferometery and atomic force microscopy. Power Spectral Densities were computed over spatial frequencies extending from…
  crossref D. P. Gaines, D.W. Sweeney, K.W. DeLong, S.P. Vernon 等 2023-02-15T16:03:09Z 置信度 0.70
• EUV lithography development in the United States
  crossref O. Wood 2008-02-06T22:30:21Z 置信度 0.70
• Flying Circus EUV Source Metrology and Source Development Assessment
  crossref Fred Bijkerk, Santi van der Westen, Caspar Bruineman, Robert Huiting 等 2010-11-09T18:48:49Z 置信度 0.70
• Background pressure effects on EUV source efficiency and produced debris characteristics
  crossref Tatyana Sizyuk 2017-03-28T02:22:56Z 置信度 0.70
• Impact of non-uniform wrinkles for a multi-stack pellicle in EUV lithography
  crossref Guk-Jin Kim, In-Seon Kim, Michael Yeung, Min-Su Kim 等 2017-03-25T11:35:53Z 置信度 0.70
• Design and fabrication of a high-efficiency extreme-ultraviolet binary phase-only computer-generated hologram.
  As the development of extreme-ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, make it ver…
  pubmed Naulleau PP, Salmassi F, Gullikson EM, Liddle JA 2007 May 10 置信度 0.82
• Mass-limited Sn target irradiated by dual laser pulses for an extreme ultraviolet lithography source.
  A thin Sn film was investigated as a mass-limited target for an extreme ultraviolet (EUV) lithography source. It was found that those energetic ions that are intrinsic with the mass-limited Sn target could be efficiently mitigated by introducing a low-energy p…
  pubmed Tao Y, Tillack MS, Harilal SS, Sequoia KL 等 2007 May 15 置信度 0.82
• Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.
  The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To c…
  pubmed Toyosugi N, Yamada H, Minkov D, Morita M 等 2007 Mar 置信度 0.82
• Patterned media towards Nano-bit magnetic recording: fabrication and challenges.
  During the past decade, magnetic recording density of HDD has doubled almost every 18 months. To keep increasing the recording density, there is a need to make the small bits thermally stable. The most recent method using perpendicular recording media (PMR) wi…
  pubmed Sbiaa R, Piramanayagam SN 2007 置信度 0.82
• Nanopatterns with biological functions.
  Both curiosity and a desire for efficiency have advanced our ability to manipulate materials with great precision on the micrometer and, more recently, on the nanometer scale. Certainly, the semiconductor and integrated circuit industry has put the pressure on…
  pubmed Blättler T, Huwiler C, Ochsner M, Städler B 等 2006 Aug 置信度 0.82
• Effect of focal spot size on in-band 13.5 nm extreme ultraviolet emission from laser-produced Sn plasma.
  The effect of focal spot size on in-band 13.5 nm extreme ultraviolet (EUV) emission from laser-produced Sn plasmas was investigated for an EUV lithography light source. Almost constant in-band conversion efficiency from laser to 13.5 nm EUV light was noted wit…
  pubmed Tao Y, Harilal SS, Tillack MS, Sequoia KL 等 2006 Aug 15 置信度 0.82
• Lithographic characterization of the spherical error in an extreme-ultraviolet optic by use of a programmable pupil-fill illuminator.
  Extreme-ultraviolet (EUV) lithography remains a leading contender for use in the mass production of nanoelectronics at the 32 nm node. Great progress has been made in all areas of EUV lithography, including the crucial issue of fabrication of diffraction-limit…
  pubmed Naulleau PP, Cain JP, Goldberg KA 2006 Mar 20 置信度 0.82
• Line edge roughness of a latent image in post-optical lithography.
  The progress of electronic devices has been supported by advances in 'top-down' nanotechnology, namely lithography, which reached a scale of 90 nm on the mass production stage in 2005. The energy of the exposure source would exceed the ionization potentia…
  pubmed Saeki A, Kozawa T, Tagawa S, Cao HB 2006 Mar 28 置信度 0.82
• Design and performance of EUV resist containing photoacid generator for sub-100 nm lithography.
  To fulfill the SIA roadmap requirements for EUV resists, the development of entirely new polymer platforms is necessary. In order to address issues like Line Edge Roughness (LER) and photospeed, we have developed a novel chemically amplified photoresist contai…
  pubmed Thiyagarajan M, Gonsalves KE, Dean K, Sykes CH 2005 Jul 置信度 0.82
• Comparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges.
  Xenon and tin both are working elements applied in discharge plasmas that are being developed for application in extreme ultraviolet (EUV) lithography. Their spectra in the 10-21-nm-wavelength range have been analyzed. A fully analytical collisional-radiative …
  pubmed Kieft ER, Garloff K, van der Mullen JJ, Banine V 2005 Mar 置信度 0.82
• Characterization of a vacuum-arc discharge in tin vapor using time-resolved plasma imaging and extreme ultraviolet spectrometry.
  Discharge sources in tin vapor have recently been receiving increased attention as candidate extreme ultraviolet (EUV) light sources for application in semiconductor lithography, because of their favorable spectrum near 13.5 nm. In the ASML EUV laboratory, tim…
  pubmed Kieft ER, van der Mullen JJ, Kroesen GM, Banine V 等 2005 Feb 置信度 0.82
• Effect of mask-roughness on printed contact-size variation in extreme-ultraviolet lithography.
  Relying on reflective mask technology, extreme-ultraviolet (EUV) lithography is particularly vulnerable to mask substrate roughness. Previous research has shown mask roughness to play a significant role in printed line-edge roughness (LER). Here the analysis o…
  pubmed Naulleau PP 2005 Jan 10 置信度 0.82
• Improved emission uniformity from a liquid-jet laser-plasma extreme-ultraviolet source.
  Many modern compact soft-x-ray and extreme-ultraviolet (EUV) imaging systems operate with small fields of view and therefore benefit from the use of small high-brightness sources. Such systems include water-window microscopes and EUV lithography tools. We show…
  pubmed Hansson BA, Mosesson S, Hertz HM 2004 Oct 10 置信度 0.82
• Design, fabrication, and characterization of high-efficiency extreme-ultraviolet diffusers.
  As the development of extreme-ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. Because of the strong absorption of EUV by most materials and because of its extremely short wavelength…
  pubmed Naulleau PP, Liddle JA, Salmassi F, Anderson EH 等 2004 Oct 1 置信度 0.82
• Relevance of mask-roughness-induced printed line-edge roughness in recent and future extreme-ultraviolet lithography tests.
  The control of line-edge roughness (LER) of features printed in photoresist poses significant challenges to next-generation lithography techniques such as extreme-ultraviolet (EUV) lithography. Achieving adequately low LER levels requires accurate resist chara…
  pubmed Naulleau PP 2004 Jul 10 置信度 0.82
• Design and performance of capping layers for extreme-ultraviolet multilayer mirrors.
  Multilayer lifetime has emerged as one of the major issues for the commercialization of extreme-ultraviolet lithography (EUVL). We describe the performance of an oxidation-resistant capping layer of Ru atop multilayers that results in a reflectivity above 69% …
  pubmed Bajt S, Chapman HN, Nguyen N, Alameda J 等 2003 Oct 1 置信度 0.82
• Achromatic Fresnel optics for wideband extreme-ultraviolet and X-ray imaging.
  Advances in extreme-ultraviolet (EUV) and X-ray optics are providing powerful new capabilities in high-resolution imaging and trace-element analysis of microscopic specimens, and the potential for fabricating devices of smaller critical dimensions in next-gene…
  pubmed Wang Y, Yun W, Jacobsen C 2003 Jul 3 置信度 0.82
• Line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization.
  The control of line-edge roughness (LER) of features printed in photoresist poses significant challenges to next-generation lithography techniques such as extreme-ultraviolet (EUV) lithography. Achieving adequately low LER levels will require accurate resist c…
  pubmed Naulleau PP, Gallatin GM 2003 Jun 10 置信度 0.82
• Analysis, search, and classification for reflective ring-field projection systems.
  Extreme ultraviolet (EUV) lithography uses reflective ring-field projection systems. Geometrical obstruction limits the possible system configurations to small domains of the parameter space. We present an analysis, a search method, and a classification of the…
  pubmed Bal MF, Bociort F, Braat JJ 2003 May 1 置信度 0.82
• Quasi-phase-matched generation of coherent extreme-ultraviolet light.
  High-harmonic generation is a well-known method of producing coherent extreme-ultraviolet (EUV) light, with photon energies up to about 0.5 keV (refs 1, 2). This is achieved by focusing a femtosecond laser into a gas, and high harmonics of the fundamental lase…
  pubmed Paul A, Bartels RA, Tobey R, Green H 等 2003 Jan 2 置信度 0.82
• Generation of spatially coherent light at extreme ultraviolet wavelengths.
  We present spatial coherence measurements of extreme ultraviolet (EUV) light generated through the process of high-harmonic up-conversion of a femtosecond laser. With a phase-matched hollow-fiber geometry, the generated beam was found to exhibit essentially fu…
  pubmed Bartels RA, Paul A, Green H, Kapteyn HC 等 2002 Jul 19 置信度 0.82
• Atomic-precision multilayer coating of the first set of optics for an extreme-ultraviolet lithography prototype system.
  We present our results of coating a first set of optical elements for an extreme-ultraviolet (EUV) lithography system. The optics were coated with Mo-Si multilayer mirrors by dc magnetron sputtering and characterized by synchrotron radiation. Near-normal incid…
  pubmed Montcalm C, Grabner RF, Hudyma RM, Schmidt MA 等 2002 Jun 1 置信度 0.82
• Reflectance enhancement in the extreme ultraviolet and soft x rays by means of multilayers with more than two materials.
  Sub-quarterwave multilayer coatings with more than two different materials are shown to provide a reflectance enhancement compared with the standard two-material multilayer coatings when reflectance is limited by material absorption. A remarkable reflectance e…
  pubmed Larruquert JI 2002 Feb 置信度 0.82
• New laser plasma source for extreme-ultraviolet lithography.
  As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature sizes, projection extreme-ultraviolet (EUV) lithography becomes an increasingly attractive technology. The radiation source of choice for this approach is a laser …
  pubmed Jin F, Richardson M 1995 Sep 1 置信度 0.82
• Design of a normal incidence multilayer imaging x-ray microscope.
  Normal incidence multilayer Cassegrain x-ray telescopes were flown on the Stanford/MSFC Rocket X-Ray Spectroheliograph. These instruments produced high spatial resolution images of the Sun and conclusively demonstrated that doubly reflecting multilayer x-ray o…
  pubmed Shealy DL, Gabardi DR, Hoover RB, Walker AB Jr 等 1989 Jan 1 置信度 0.82
• Theoretical Architecture and Engineering Specifications of the Metric Spacetime Manipulator 19 (MSM-19)
  Abstract and Prior-Art Disclosure This manuscript serves as a formal public prior-art disclosure, conceptual research archive, and technical design dossier for the proposed Metric Spacetime Manipulator 19 (MSM-19) architecture. As the nineteenth-generation ite…
  datacite Tran, Minh 2026 置信度 0.66
• Metric Spacetime Manipulator 19 (MSM-19) Technical Design Dossier
  Abstract and Prior-Art Disclosure This manuscript serves as a formal public prior-art disclosure, conceptual research archive, and technical design dossier for the proposed Metric Spacetime Manipulator 19 (MSM-19) architecture. As the nineteenth-generation ite…
  datacite Tran, Minh 2026 置信度 0.66
• Metric Spacetime Manipulator 19 (MSM-19) Technical Design Dossier
  Abstract and Prior-Art Disclosure This manuscript serves as a formal public prior-art disclosure, conceptual research archive, and technical design dossier for the proposed Metric Spacetime Manipulator 19 (MSM-19) architecture. As the nineteenth-generation ite…
  datacite Tran, Minh 2026 置信度 0.66
• Metric Spacetime Manipulator 19 (MSM-19) Technical Design Dossier
  Abstract and Prior-Art Disclosure This manuscript serves as a formal public prior-art disclosure, conceptual research archive, and technical design dossier for the proposed Metric Spacetime Manipulator 19 (MSM-19) architecture. As the nineteenth-generation ite…
  datacite Tran, Minh 2026 置信度 0.66
• Metric Spacetime Manipulator 19 (MSM-19) Technical Design Dossier
  Abstract and Prior-Art Disclosure This manuscript serves as a formal public prior-art disclosure, conceptual research archive, and technical design dossier for the proposed Metric Spacetime Manipulator 19 (MSM-19) architecture. As the nineteenth-generation ite…
  datacite Tran, Minh 2026 置信度 0.66
• Metric Spacetime Manipulator 19 (MSM-19) Technical Design Dossier
  Abstract and Prior-Art Disclosure This manuscript serves as a formal public prior-art disclosure, conceptual research archive, and technical design dossier for the proposed Metric Spacetime Manipulator 19 (MSM-19) architecture. As the nineteenth-generation ite…
  datacite Tran, Minh 2026 置信度 0.66
• Beyond the Lithographic Limit: Octonionic Non-Associative Clocks, Exotic Substrate Stacking, and Hardware Interfaces to the S²³ Topological Horizon
  Abstract: We formalize the physical and topological failure modes of scaling sub-nanometer Extreme Ultraviolet (EUV) lithography on classical silicon substrates. We prove that attempting to reach high-capacity computational horizons, such as the S²³ Universal …
  datacite thompson, h.r. 2026 置信度 0.66
• Beyond the Lithographic Limit: Octonionic Non-Associative Clocks, Exotic Substrate Stacking, and Hardware Interfaces to the S²³ Topological Horizon
  Abstract: We formalize the physical and topological failure modes of scaling sub-nanometer Extreme Ultraviolet (EUV) lithography on classical silicon substrates. We prove that attempting to reach high-capacity computational horizons, such as the S²³ Universal …
  datacite thompson, h.r. 2026 置信度 0.66
• 3D resist profile evolution in high-NA EUV lithography for random logic vias: simulation and experiment insights
  High numerical aperture (high-NA) extreme ultraviolet lithography (EUVL) introduces challenges in resist profile control and pattern fidelity, particularly for advanced logic via configurations. We evaluate resist profile evolution and local critical dimension…
  datacite Poovanna, Bhavishya Chowrira, De Bisschop, Peter, Victor M Blanco, Carballo, Mircea V., Dusa 2026 置信度 0.66
• 3D resist profile evolution in high-NA EUV lithography for random logic vias: simulation and experiment insights
  High numerical aperture (high-NA) extreme ultraviolet lithography (EUVL) introduces challenges in resist profile control and pattern fidelity, particularly for advanced logic via configurations. We evaluate resist profile evolution and local critical dimension…
  datacite Poovanna, Bhavishya Chowrira, De Bisschop, Peter, Victor M Blanco, Carballo, Mircea V., Dusa 2026 置信度 0.66
• On the use of illumination-source pixels in the central-obscuration area for enhancing the process window of contact printing with high-NA EUV lithography
  One of the challenges with high numerical aperture extreme ultra-violet lithography (high-NA EUVL) is the limited depth-of-focus (DOF). In this study, we demonstrate how an illumination source with the majority of pixels in the central obscuration region of th…
  datacite De Bisschop, Peter, Chowrira, Bhavishya, Pellens, Nick 2026 置信度 0.66
• On the use of illumination-source pixels in the central-obscuration area for enhancing the process window of contact printing with high-NA EUV lithography
  One of the challenges with high numerical aperture extreme ultra-violet lithography (high-NA EUVL) is the limited depth-of-focus (DOF). In this study, we demonstrate how an illumination source with the majority of pixels in the central obscuration region of th…
  datacite De Bisschop, Peter, Chowrira, Bhavishya, Pellens, Nick 2026 置信度 0.66
• A Fully Optical Analog Coprocessor: The 8+1 Architecture, Space-Based, and Beyond
  This paper presents a lamp-like, deliberately redundant, and entirely self-contained description of a fully optical analog coprocessor designed for matrix multiplication. We argue that this machine can be built without EUV lithography, without millions of indi…
  datacite Ovchinnikov, Evgeny 2026 置信度 0.66 optical coprocessor, ring resonator, vacuum waveguide, laser trimming, excess noise, matrix multiplication, analog computing, independent lasers, space-based computing, FTL protocol, quantum annealing, error correction
• A Fully Optical Analog Coprocessor: The 8+1 Architecture, Space-Based, and Beyond
  This paper presents a lamp-like, deliberately redundant, and entirely self-contained description of a fully optical analog coprocessor designed for matrix multiplication. We argue that this machine can be built without EUV lithography, without millions of indi…
  datacite Ovchinnikov, Evgeny 2026 置信度 0.66 optical coprocessor, ring resonator, vacuum waveguide, laser trimming, excess noise, matrix multiplication, analog computing, independent lasers, space-based computing, FTL protocol, quantum annealing, error correction
• SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
  The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the …
  datacite Van Caekenberghe, Thomas, Steinacker, Paul, Raes, Bart, Beyne, Sofie 等 2026 置信度 0.66 Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum Physics (quant-ph)FOS: Physical sciences
• Physics-Informed Machine Learning for Modeling and Design of Nano-Optical Devices
  Advances in nanofabrication have enabled the development of nano-optical devices with feature sizes close to or below the exposure wavelength, such as extreme ultraviolet (EUV) lithography masks and optical metasurfaces. Accurate and efficient modeling of ligh…
  datacite Medvedev, Vlad 2026 置信度 0.66 nano-opticslight–matter interactionelectromagnetic field simulationMaxwell’s equationsphysics-informed machine learning
• When the Light Source Is the Bottleneck: Subsystem Innovation and Production-Regime Readiness in EUV Lithography
  This working paper extends Production-Method Transition Theory (PMTT) from whole production methods to critical subsystem innovations inside mature production regimes. Rather than asking whether a new technology replaces an incumbent industry, the paper examin…
  datacite Bell, Peter 2026 置信度 0.66
• Transmissive extreme ultraviolet metagrating
  Extreme ultraviolet (EUV) radiation is a key tool for attosecond physics and lithography. However, strong material absorption limits the availability of transmissive optical elements at these wavelengths. Metaoptics exploit geometry to control the wavefront of…
  datacite Kulter, Anna, Crispim, Tiago Regio, Weiss, Lorenz, Grossek, Alexander Sagar 等 2026 置信度 0.66 Optics (physics.optics)FOS: Physical sciences
• 3D Mask Simulation and Lithographic Imaging using Physics-Informed Neural Networks
  The increasing demands on computational lithography and imaging in the design and optimization of lithography processes necessitate rigorous modeling of EUV light diffracted from the mask. Traditional EMF solvers are inefficient for large-scale technology prob…
  datacite Medvedev, Vlad, Erdmann, Andreas, Roßkopf, Andreas, :unav 2022 置信度 0.66
• Topological Optimization of Aperiodic Hafnium Lattices for Sub-2nm Optical Resolution in Near-Field Scanning Optical Microscopy (NSOM)
  Standard Near-Field Scanning Optical Microscopy (NSOM) is fundamentally limited by radiative scattering at high field enhancements and quantum electron tunneling thresholds at sub-nanometer geometries. This paper defines an optimized aperiodic nanophotonic lat…
  datacite Schramm, Daniel 2026 置信度 0.66 NanophotonicsNSOMHafnium OxidePlasmonicsHelical Catenoid, Super-Resolution Microscopy
• Topological Optimization of Aperiodic Hafnium Lattices for Sub-2nm Optical Resolution in Near-Field Scanning Optical Microscopy (NSOM)
  Standard Near-Field Scanning Optical Microscopy (NSOM) is fundamentally limited by radiative scattering at high field enhancements and quantum electron tunneling thresholds at sub-nanometer geometries. This paper defines an optimized aperiodic nanophotonic lat…
  datacite Schramm, Daniel 2026 置信度 0.66 NanophotonicsNSOMHafnium OxidePlasmonicsHelical Catenoid, Super-Resolution Microscopy
• Resonance-Imprint Lithography in USP Field Theory: High-Frequency Bias, Delta-f-Gated Atomic Writing, and Transistor Boundary Engineering
  This document proposes Resonance-Imprint Lithography (RIL), a USP Field Theory interpretation and engineering roadmap for resonance-gated patterning, atomically precise semiconductor boundary correction, and transistor active-region engineering. The proposal d…
  datacite Sepehri, Sadegh 2026 置信度 0.66 USP Field Theorysemiconductor fabricationatomically precise manufacturingresonance-imprint lithographyGamma_write
• An Ultra-Low-Power, High-Frequency Parallel nTron Architecture for Maskless Electron-Beam Lithography for Advanced Semiconductor Manufacturing
  We propose a novel system architecture for maskless electron-beam lithography based on large-scale parallel control using superconducting nanowire cryotrons (nTron). The architecture vertically integrates three functional layers: an nTron logic array operating…
  datacite Yin, Li-Kuang 2026 置信度 0.66 Superconducting lithographynTronElectron beam lithography (EBL)Maskless lithographySuperconducting nanowire
• An Ultra-Low-Power, High-Frequency Parallel nTron Architecture for Maskless Electron-Beam Lithography for Advanced Semiconductor Manufacturing
  We propose a novel system architecture for maskless electron-beam lithography based on large-scale parallel control using superconducting nanowire cryotrons (nTron). The architecture vertically integrates three functional layers: an nTron logic array operating…
  datacite Yin, Li-Kuang 2026 置信度 0.66 Superconducting lithographynTronElectron beam lithography (EBL)Maskless lithographySuperconducting nanowire
• Ångstrom-Node Scaling:Design of a High-Throughput, High-Resolution Pulsed Atomic Source via Molecular Layer Physisorption and Electrostatic Field Assistance for Scalable Atom Beam Lithography
  We present a pulsed atomic source that achieves both high resolution and high throughput by circumventing the traditional temperature-velocity trade-off in atom beam lithography. The core principle is threefold: (i) lowering the desorption barrier via a molecu…
  datacite Yin, Li-Kuang 2026 置信度 0.66 Atom Beam LithographyAtomic SourceNeutral Atom LithographyNanofabricationMolecular Beam Epitaxy (MBE)
• Ångstrom-Node Scaling:Design of a High-Throughput, High-Resolution Pulsed Atomic Source via Molecular Layer Physisorption and Electrostatic Field Assistance for Scalable Atom Beam Lithography
  We present a pulsed atomic source that achieves both high resolution and high throughput by circumventing the traditional temperature-velocity trade-off in atom beam lithography. The core principle is threefold: (i) lowering the desorption barrier via a molecu…
  datacite Yin, Li-Kuang 2026 置信度 0.66 Atom Beam LithographyAtomic SourceNeutral Atom LithographyNanofabricationMolecular Beam Epitaxy (MBE)
• Ep. 608: The RAMpocalypse: Why AI is Starving Your PC
  Episode summary: In this episode of My Weird Prompts, Herman and Corn tackle the "RAMpocalypse"—a staggering spike in memory prices that has left enthusiasts and server builders in the lurch. They explore the shocking statistic that OpenAI alone is consuming 4…
  datacite Rosehill, Daniel, Gemini 3.1 (Flash), Chatterbox TTS 2026 置信度 0.66 podcastai-generatedmy weird promptsai-traininghardware-engineering
• Gradient-based inverse lithography for EUV masks via the waveguide method and a physics-informed neural operator
  Gradient-based inverse lithography technology~(ILT) for extreme ultraviolet~(EUV) masks is presented. A novel framework treats the differentiable waveguide method and the recently proposed waveguide neural operator~(WGNO) as end-to-end physics engines, recover…
  datacite Es'kin, Vasiliy A., Ivanov, Egor V. 2026 置信度 0.66 Machine Learning (cs.LG)Artificial Intelligence (cs.AI)Optimization and Control (math.OC)Computational Physics (physics.comp-ph)Optics (physics.optics)
• Pseudo-spectral frequency-domain method with background field decomposition and Green's function preconditioner for electromagnetic scattering problem in EUV lithography
  We provide an accelerated computational framework to solve electromagnetic scattering problems in planarly layered media arising from extreme ultraviolet (EUV) lithography. To achieve this, we reformulate the EUV scattering problem into a scattering problem on…
  datacite Lee, Seungjin, Gillijns, Werner, Kim, Doyun 2026 置信度 0.66 Optics (physics.optics)Computational Physics (physics.comp-ph)FOS: Physical sciencesFOS: Physical sciences
• Thermal-Quantum-Chip Architecture And Industrial Blueprint | TQC-SS-5.0
  Edit --- ENGLISH ABSTRACT --- T his component contains the industrial hardware blueprint and the 14-phase Standard Operating Procedure (SOP) for the fabrication of the TQ-SS-5.0 Chip (Thermo-Quantum-Chip). It translates the biophysical principles of Topologica…
  datacite Şıktaş, Serhat 2026 置信度 0.66
• Thermal-Quantum-Chip Architecture And Industrial Blueprint | TQC-SS-5.0
  Edit --- ENGLISH ABSTRACT --- T his component contains the industrial hardware blueprint and the 14-phase Standard Operating Procedure (SOP) for the fabrication of the TQ-SS-5.0 Chip (Thermo-Quantum-Chip). It translates the biophysical principles of Topologica…
  datacite Şıktaş, Serhat 2026 置信度 0.66
• The High-NA EUV Lithography: Architecture and Operation in ASML TwinScan EXE:5000 Systems
  Abstract: This monograph provides a rigorous, engineering-focused architectural analysis of the ASML TwinScan EXE:5000 High-NA (0.55) Extreme Ultraviolet (EUV) lithography system, mapping the complex technological, optical, and computational frameworks require…
  datacite Lo Magro, Attilio 2026 置信度 0.66 Nanoscale characterisationNanoelectronicsDigital electronic devicesMicroelectronics
• The High-NA EUV Lithography: Architecture and Operation in ASML TwinScan EXE:5000 Systems
  Abstract: This monograph provides a rigorous, engineering-focused architectural analysis of the ASML TwinScan EXE:5000 High-NA (0.55) Extreme Ultraviolet (EUV) lithography system, mapping the complex technological, optical, and computational frameworks require…
  datacite Lo Magro, Attilio 2026 置信度 0.66 Nanoscale characterisationNanoelectronicsDigital electronic devicesMicroelectronics
• Gamma Ray Lithography Machine: A Conceptual Architecture for Next-Generation Chip Manufacturing
  This paper presents a conceptual architecture for a gamma ray lithography machine capable of theoretically producing transistors far smaller than current EUV technology. All 13 major engineering components are addressed using analog physics principles. Develop…
  datacite Ali, Muhammad 2026 置信度 0.66 gamma ray lithographysemiconductor manufacturingchip fabricationnanotechnologytransistor miniaturization
• Gamma Ray Lithography Machine: A Conceptual Architecture for Next-Generation Chip Manufacturing
  This paper presents a conceptual architecture for a gamma ray lithography machine capable of theoretically producing transistors far smaller than current EUV technology. All 13 major engineering components are addressed using analog physics principles. Develop…
  datacite Ali, Muhammad 2026 置信度 0.66 gamma ray lithographysemiconductor manufacturingchip fabricationnanotechnologytransistor miniaturization
• Liquid Memory: A Fluid-Based Storage Architecture Breaking the 2D/3D Solid-State Paradigm
  The von Neumann bottleneck, or “memory wall”, remains the primary obstacle to scaling AI hardware. Traditional solutions—wider HBM stacks, faster SerDes, and 3D NAND—are hitting diminishing returns due to lithography costs, thermal limits, and yield issues. Th…
  datacite Yin, Li-Kuang 2026 置信度 0.66 (4-(m-Chlorophenylcarbamoyloxy)-2-butynyl)trimethylammonium ChlorideNon-volatile Memory (NVM)Fluidic Storage / Fluid-based ComputingReconfigurable ArchitectureBeyond von Neumann Architecture
• 40% boost in extreme ultraviolet conversion efficiency via simultaneous dual-beam 2-μm laser irradiation
  Scaling extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrated a 40% CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090…
  datacite Nagahama, Naoki, Nishimiya, Kaito, Yamamoto, Shunya, Yazawa, Hayato 等 2026 置信度 0.66 Optics (physics.optics)Atomic Physics (physics.atom-ph)Plasma Physics (physics.plasm-ph)FOS: Physical sciencesFOS: Physical sciences
• The Physical Truth of Huawei's Tau (τ) Law: Open-Source Chip Architecture Based on Force Balance — Surpassing Tau Law, No EUV Required
  Abstract This paper presents an in-depth analysis and engineering optimization of Huawei’s Tau (τ) Law, aiming to reveal its underlying physical logic and implement a high-performance chip architecture based on mature manufacturing processes. By applying the c…
  datacite Bian, Zhenfeng 2026 置信度 0.66 Huawei Tau Law; force balance; particle deterministic state; logic folding; time scaling; open-source chip architecture; no EUV; post-Moore era华为韬定律;力平衡;粒子确定态;逻辑折叠;时间缩微;开源芯片架构;无需EUV;后摩尔时代Physics; Condensed Matter Physics; Theoretical Physics; Microelectronics; Integrated Circuit Design; Electronic Engineering; Computer Engineering; Semiconductor Technology; Artificial Intelligence Hardware物理学;凝聚态物理;理论物理;微电子学;集成电路设计;电子科学与技术;计算机工程;半导体技术;人工智能硬件
• The Physical Truth of Huawei's Tau (τ) Law: Open-Source Chip Architecture Based on Force Balance — Surpassing Tau Law, No EUV Required
  Abstract This paper presents an in-depth analysis and engineering optimization of Huawei’s Tau (τ) Law, aiming to reveal its underlying physical logic and implement a high-performance chip architecture based on mature manufacturing processes. By applying the c…
  datacite Bian, Zhenfeng 2026 置信度 0.66 Huawei Tau Law; force balance; particle deterministic state; logic folding; time scaling; open-source chip architecture; no EUV; post-Moore era华为韬定律;力平衡;粒子确定态;逻辑折叠;时间缩微;开源芯片架构;无需EUV;后摩尔时代Physics; Condensed Matter Physics; Theoretical Physics; Microelectronics; Integrated Circuit Design; Electronic Engineering; Computer Engineering; Semiconductor Technology; Artificial Intelligence Hardware物理学;凝聚态物理;理论物理;微电子学;集成电路设计;电子科学与技术;计算机工程;半导体技术;人工智能硬件
• The High-NA EUV Lithography: Architecture and Operation in ASML TwinScan EXE:5000 Systems
  Abstract: This monograph provides a rigorous, engineering-focused architectural analysis of the ASML TwinScan EXE:5000 High-NA (0.55) Extreme Ultraviolet (EUV) lithography system, mapping the complex technological, optical, and computational frameworks require…
  datacite Lo Magro, Attilio 2026 置信度 0.66 High-NA EUV LithographyAnamorphic OpticsASML TwinScan EXE:5000TRUMPF Laser SourceDynamic Gas Lock (DGL)
• GPU Acceleration of Real-Time Control Loops
  Extreme Ultraviolet (EUV) photolithography is seen as the key enabler for increasing transistor density in the next decade. In EUV lithography, 13.5 nm EUV light is illuminated through a reticle, holding a pattern to be printed, onto a silicon wafer. This proc…
  datacite Bamakhrama, Mohamed A., Arrizabalaga, Alejandro, Overman, Frank, Smeets, Jean-Paul 等 2019 置信度 0.66 Distributed, Parallel, and Cluster Computing (cs.DC)Systems and Control (eess.SY)FOS: Computer and information sciencesFOS: Computer and information sciencesFOS: Electrical engineering, electronic engineering, information engineering
• Optimization of EUV output by experimentally validated radiation-hydrodynamic simulations across a broad laser parameter space
  Practical requirements such as improving wall-plug efficiency and reducing system footprint have become increasingly important with the introduction of extreme ultraviolet (EUV) lithography into high-volume semiconductor manufacturing. These demands motivate t…
  datacite Tanaka, Nozomi, Yamamoto, Yu, Sasaki, Akira, Nishihara, Katsunobu 等 2026 置信度 0.66 Plasma Physics (physics.plasm-ph)FOS: Physical sciencesFOS: Physical sciences
• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66