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• Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications.
  Transient electronic systems offer compelling solutions for sustainable technologies, enabling environmentally benign disposal in ecological settings and eliminating surgical retrieval in biomedical implants. At the core of such systems, biodegradable semicond…
  pubmed Gu JW, Shim JS, Chae M, Jung Y 等 2026 置信度 0.82
• Uni-traveling-carrier photodiode based on MoS(2)/GaN van der Waals heterojunction for high-speed visible-light detection.
  Uni-traveling-carrier photodiodes (UTC-PDs), which utilize only electrons as the active carriers, have become indispensable in high-speed optoelectronics due to their unique capabilities, such as high saturation power and broad bandwidth. However, extending th…
  pubmed Kadowaki T, Serikawa T, Ichikawa A, Ohmaki Y 等 2025 Nov 25 置信度 0.82
• Transition metal doping boosting paper-based photoelectrochemical immunosensing for neurofilament light chain protein detection.
  Early diagnosis of neurodegenerative diseases relies on highly sensitive detection of their specific biomarkers. However, existing photoelectrochemical (PEC) sensing technologies, despite the promising prospects, exhibit significant limitations in detection st…
  pubmed Xu CH, Tao AY, Meng MQ, Zhang XL 等 2026 Jan 5 置信度 0.82
• Revolutionizing Quinoidal Optoelectronics Through Heterojunction Engineering for Tri-Modal Reconfigurability Wide-Spectral Detection.
  Quinoidal-conjugated materials are notable for their ultra-low LUMO levels (<-4.0 eV) and exceptional wide-spectral absorption in the NIR-II region, attributed to their narrow optical bandgaps. However, their inferior charge transport properties hinder…
  pubmed Zhao Y, Jiang J, Hu Z, Deng Y 等 2026 Jan 16 置信度 0.82
• Mixed-Dimensional Chiral COF-2D Molecular Crystal Heterojunctions for Neuromorphic Circular Polarization Vision.
  Emulating the biological visual system's ability to perceive and preprocess circularly polarized light (CPL) offers transformative opportunities for advanced imaging, quantum communication, and autonomous navigation. However, the implementation of such functio…
  pubmed Zhang Y, Sun L, Dong M, Yu Z 等 2026 Feb 置信度 0.82
• Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices.
  Ultrawide bandgap (UWBG) semiconductors offer high critical electric fields and saturation velocities ideal for radio frequency (rf) devices, but achieving both shallow-level doping and high thermal conductivity ( k T ) in a single material remains difficult. …
  pubmed Zhou H, Zhou M, Xiang M, Gong H 等 2025 置信度 0.82
• Ni/Ag bimetallic nanoparticle-engineered Ti(3)C(2)T(x) MXene composite as a SERS substrate for trace detection of thiram pesticide.
  Surface-enhanced Raman scattering (SERS) has emerged as a powerful analytical tool for trace molecular detection, enabling identification of target analytes through their characteristic vibrational fingerprints. Its high sensitivity, selectivity, and non-destr…
  pubmed Tang J, Wang Y, Wang C, Yu Z 等 2025 置信度 0.82
• Observation of Interlayer Excitons in Mixed-Dimensional MoS(2) and InGaN/GaN Quantum Well Heterojunctions.
  Mixed-dimensional heterojunctions (HJs) between compound semiconductors and transition metal dichalcogenides (TMDCs) provide a versatile platform for modulating interfacial exciton dynamics. While compound semiconductors offer precise compositional control for…
  pubmed Kim DW, Lee S, Baek Y, Jeon K 等 2025 Dec 17 置信度 0.82
• A Review on ZnO Nanostructures for Optical Biosensors: Morphology, Immobilization Strategies, and Biomedical Applications.
  ZnO nanostructures have attracted attention as transducer materials in optical biosensing platforms due to their wide bandgap, defect-mediated photoluminescence, high surface-to-volume ratio, and tunable morphology. This review examines how the dimensionality …
  pubmed Serrano-Lázaro A, Portillo-Cortez K, de la Mora Mojica MB, Durán-Álvarez JC 2025 Oct 25 置信度 0.82
• Fabrications of Fully Transparent Gallium Oxide Solar-Blind Photodetectors.
  This article presents a remarkable achievement: a gallium oxide-based, non-metallic, fully transparent, and self-powered solar-blind ultraviolet photodetector. We have replaced the traditional metal electrode with gallium-doped zinc oxide (GZO), a transparent …
  pubmed Wang LW, Wu TY, Chu SY 2025 置信度 0.82
• 2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices.
  Scaled and high-quality insulators are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk l…
  pubmed Turker F, Xu B, Dong C, Labella M 3rd 等 2026 Jan 置信度 0.82
• Crystallinity-Preserving Atomic Layer Etching of Ultrathin In(2)O(3) for Stable Oxide Nanoelectronics.
  Indium oxide (In 2 O 3 ) is a promising channel material for advanced electronics, offering high electron mobility, a wide bandgap, and excellent compatibility with atomic layer deposition (ALD). However, conventional bottom-up ALD processes cannot achieve and…
  pubmed Kim MC, Yang HL, Gwoen JH, Shin SA 等 2025 Nov 18 置信度 0.82
• Experimental Observation of Spin Defects in the van der Waals Material GeS(2).
  Spin defects in atomically thin two-dimensional (2D) materials are promising for quantum applications, particularly quantum sensing. The long coherence times of the spin defects enable high sensitivity in measurements of the fluctuations of the targeted physic…
  pubmed Liu W, Li S, Guo NJ, Zeng XD 等 2025 Nov 19 置信度 0.82
• Recent advances in modified In(2)O(3)-based gas sensors for ultra-sensitive formaldehyde detection.
  Formaldehyde (HCHO), a toxic volatile organic compound (VOC) widely used in indoor construction and furnishing materials, poses significant health risks even at trace concentrations. The development of highly sensitive, selective, and low-cost detection techni…
  pubmed Liu Z, Jia J, Zhao G 2026 置信度 0.82
• Atomic layer deposition of ZnO on NH(2)-MIL-125(Ti) for enhanced selective CO(2) to CH(4) conversion via S-scheme heterojunction engineering.
  NH 2 -MIL-125(Ti) (NM) is a prototypical metal-organic framework (MOF) photocatalyst with visible-light responsiveness. However, its practical application in CO 2 reduction is significantly limited by fast charge carrier recombination and poor product selectiv…
  pubmed Zhao J, Li Z, Zuo Y, Huang S 等 2026 Feb 15 置信度 0.82
• Rudorffite Silver-Bismuth Iodides: Emerging Eco-Friendly Wide-Bandgap Absorbers for Indoor Photovoltaics.
  Indoor photovoltaics (IPVs) are poised to play a pivotal role in powering low-consumption electronics, including wireless sensors and Internet of Things (IoT) devices, by harvesting energy from ambient light. Among emerging absorbers, silver-bismuth iodide rud…
  pubmed Moon T 2025 Dec 置信度 0.82
• Zinc Oxide Nanostructures in Photovoltaics: Recent Progress, Technical Challenges and Perspectives.
  Zinc oxide (ZnO), an n-type inorganic semiconductor, and its nanostructures are versatile and multipurpose materials that exhibit excellent electronic and optoelectronic properties, such as a wide bandgap, superior electron mobility, strong photocatalytic acti…
  pubmed Alamgeer, Rehan S, Hasan SAU, Zhao B 等 2026 Jan 10 置信度 0.82
• Ga(2)O(3) MISM photodiode arrays with an HfO(2) insulator achieving a 20 fA dark current for solar-blind imaging.
  Traditional Ga 2 O 3 metal-semiconductor-metal (MSM) photodetectors suffer from high dark current, limiting their sensitivity for deep ultraviolet (DUV) imaging. This Letter reports a novel, to the best of our knowledge, metal-insulator-semiconductor-metal (MI…
  pubmed Dong D, Cao X, Wang J, Zhang Q 等 2025 置信度 0.82
• Engineering multifunctionality in gallium oxide: unveiling novel structural, electronic, and opto-mechanical attributes of gadolinium-doped β-Ga(2)O(3) through advanced first-principles design.
  The design of next-generation wide band gap semiconductors requires both intrinsic optimization and judicious doping strategies. In this work, we comprehensively examine pristine and gadolinium-doped β-Ga 2 O 3 (Gd-Ga 2 O 3 ) through a multi-scale comput…
  pubmed Darvish Ganji M, Ko H 2025 Oct 28 置信度 0.82
• High-Performance Self-Powered c-MgZnO-Based Schottky and PIN Far-UVC Photodetectors.
  Self-powered far-ultraviolet C (far-UVC, 200 < λ < 240 nm) photodetectors are highly desired due to their wide-ranging applications. Cubic-phase Mg x Zn 1- x O ( c -MgZnO), an ultrawide bandgap ternary semiconductor alloy with high Mg composition d…
  pubmed Zhou F, Liu K, Zhu Y, Chen X 等 2025 置信度 0.82
• Research on Linear Energy Transfer of SiC Materials Based on Monte Carlo Method.
  The energy deposition process for the main components of SIC Schottky diodes is simulated based on Geant4. Particle bombardment results were simulated under different angles, target materials and doping concentrations on the same target material for different …
  pubmed Xiao J, Xie H, Du S, Wang S 等 2025 Sep 26 置信度 0.82
• Progress in NiO Based Materials for Electrochemical Sensing Applications.
  Nickel oxide (NiO), a wide bandgap p-type semiconductor, has emerged as a promising material for electrochemical sensing owing to its excellent redox properties, chemical stability, and facile synthesis. Its strong electrocatalytic activity enables effective d…
  pubmed Kumar P, Aslam M, Ali S, Hamdy K 等 2025 Oct 9 置信度 0.82
• Hierarchically Converged Defect Engineering with 2-Dimensional Black Phosphorus/MXene Sequence for Sensitive Photoelectrochemical-Electrostatic Sensors.
  The function-integrated sensors have harvested increasingly vital across diverse applications, especially in the field of smart wearables, yet optimizing the synergy between electrostatic and light signals in photoelectrochemical (PEC) systems remains a critic…
  pubmed Zeng W, Zhang Y, Wu Z, Zhang Z 等 2025 置信度 0.82
• Near-Infrared Organic Photodetectors with Ultralow Dark Current for Photoplethysmogram Sensor and Optical Communication Applications.
  Suppressing dark current (and noise) in organic photodetectors (OPDs) is crucial to the design of highly sensitive devices. Currently, the physical mechanisms that contribute to the dark current in OPDs are clear, which include shunt leakage current originatin…
  pubmed Chen Y, He Y, Liu G, Si Y 等 2025 置信度 0.82
• Design principles of spacer cations for suppressing phase segregation in 2D halide perovskites.
  Suppression of photoinduced halide segregation in mixed halide perovskites remains a significant challenge for their application as wide bandgap semiconductors in solar cells. In addition to stability issues, halide segregation leads to a loss in power convers…
  pubmed Min S, Mukherjee M, Szabó G, Kamat PV 等 2025 Nov 26 置信度 0.82
• Large-area thin-film synthesis of photoactive Cu(3)PS(4) thiophosphate semiconductor with 0-14 pH stability range.
  Metal phosphosulfide materials have sparked growing interest due to their wide range of properties and applications. Despite a sizable presence in the bulk materials synthesis literature, reports of phosphosulfide thin films are extremely scarce. This may be d…
  pubmed Mittmann LA, Sanz Rodrigo J, Bertin E, Dalmonte G 等 2025 Nov 26 置信度 0.82
• Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors.
  AlGaN/GaN high electron mobility transistors (HEMTs) are critical components in modern radio frequency (RF) power amplifiers. However, commercial AlGaN/GaN HEMTs often require power derating to maintain safe channel temperatures. Deposition of a polycrystallin…
  pubmed Walwil H, Malakoutian M, Shoemaker DC, Woo K 等 2025 Oct 29 置信度 0.82
• Solution-phase synthesis and characterization of alkaline earth polysulfides as colloidal nanocrystals.
  Solution-chemistry fabrication of semiconductor materials is an attractive synthesis method that allows for easy post-synthesis use in various applications. In this work, we investigate the solution-phase synthesis of a lesser-studied class of semiconductor ma…
  pubmed Hayes DC, Choudhry OZ, Agarwal S, Vincent KC 等 2025 置信度 0.82
• Interfacial Layer Engineering in Zr-Doped HfO(2) Ferroelectric Films: Trade-Off Between Polarization Enhancement and Reliability.
  HfO 2 -based ferroelectric materials have attracted significant attention for next-generation nonvolatile memory applications due to their superior ferroelectric properties and CMOS compatibility. In this study, Zr -doped HfO 2 (HZO) films with various enginee…
  pubmed Yang S, Ma W, Peng Y, Wu Q 等 2025 Oct 29 置信度 0.82
• Ultrasensitive and Ultrafast Self-Powered Ultraviolet Photodetector Array for Solar-Blind and Weak-Light Imaging.
  Self-powered ultraviolet (UV) photodetectors (PDs) based on wide bandgap semiconductors (WBGSs) and their heterostructures face challenges in ultrasensitive and ultrafast weak-light detection capabilities. In this work, an 8 × 8 UV photodetector array bas…
  pubmed Deng W, Fan X, Du Y, Ma S 等 2026 Jan 置信度 0.82
• Biogenic Fabrication of Nanoparticles With Rhododendron arboreum: A Multifunctional Platform With Antibacterial, Anti-inflammatory, and Anticancer Therapeutic Potential.
  Plant-mediated nanotechnology offers a sustainable alternative to conventional nanoparticle synthesis by reducing reliance on hazardous chemicals and energy-intensive processes. Zinc sulfide nanoparticles (ZnS NPs) were selected for this study due to their wid…
  pubmed Saba I, Dhiman VK, Kalaichelvan S, Subbarayan R 等 2025 Sep 置信度 0.82
• Self-Powered Halide Perovskite Optoelectronic Synaptic Memristors for Reconfigurable Logic and Reservoir Computing Applications.
  The development of low-power neuromorphic systems requires the integration of sensing, logic operations, neuromorphic computing, and energy autonomy. Herein, we present a triple-cation and triple-anion perovskite-based (p-type/intrinsic/n-type) p-i-n optoelect…
  pubmed Cui D, Guo P, Xu Y, Gao X 等 2025 Oct 29 置信度 0.82
• Dimension Tailoring of Quasi-2D Perovskite Films Based on Atmosphere Control Toward Enhanced Amplified Spontaneous Emission.
  Quasi-two-dimensional (Q2D) perovskite films have garnered significant attention as novel gain media for lasers due to their tunable bandgap, narrow linewidth, and solution processability. Q2D perovskites endowed with intrinsic quantum well structures demonstr…
  pubmed Wang Z, Huang X, Song Z, Guo C 等 2025 Oct 7 置信度 0.82
• A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices.
  4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into suspended nanodevices enhanc…
  pubmed Xie AH, Day AM, Dietz JR, Jin C 等 2025 置信度 0.82
• DFT mechanistic insights into the atomic layer deposition of β-Ga(2)O(3).
  Ga 2 O 3 is a wide bandgap semiconductor material exhibiting vast application potential in power electronics, radio frequency electronics, deep ultraviolet optoelectronic devices, and other fields. The fabrication of β-Ga 2 O 3 thin films presents a form…
  pubmed Yang J, Jing Y, Yang Z, Zhao J 等 2025 Oct 8 置信度 0.82
• Low-Cost Maskless Photolithography Using an LCD-3D Printer for Microelectronic Devices.
  A cost-effective and flexible approach is presented to maskless photolithography using a commercial Liquid Crystal Display (LCD)-based Masked Stereolithography Apparatus (MSLA) 3D printer. This method enables rapid and flexible patterning of photoresist-coated…
  pubmed Wu Q, Zhang Y, Pucher T, McLarnon B 等 2025 Nov 置信度 0.82
• First-principles investigation of 6H-SiC dominated by strong covalent bonding: electronic structure, mechanical properties and optical properties.
  Silicon carbide (SiC), a third-generation semiconductor, is renowned for its wide bandgap, exceptional thermal conductivity and high breakdown field. The unique ABCACB stacking atomic arrangement of hexagonal SiC (6H-SiC) induces direction-dependent electronic…
  pubmed Xia JY, Liu ZT, Liu QJ 2025 置信度 0.82
• Modulating Crystallization Dynamics and Disentangling Degradation Pathways in Pure-Iodide Wide-Bandgap Perovskite Solar Cells.
  Wide-bandgap perovskite solar cells (WBG-PSCs) function as top cells in tandem architectures to overcome the Shockley-Queisser (S-Q) limit of single-junction devices. However, traditional mixed-halide WBG-PSCs suffer from photoinduced halide segregation. Devel…
  pubmed Wu K, Du G, Wang X, Zhao C 等 2025 置信度 0.82
• Synergistic Opto-Electrical Modification of the Buried Interface for Inverted Wide-Bandgap Perovskite Solar Cells.
  Nickel oxide (NiO x ) is a promising hole transport layer (HTL) in inverted wide-bandgap perovskite solar cells (WB-PSCs), but its relatively low conductivity necessitates further improvement. In this work, aluminum oxide nanoparticles (Al 2 O 3 NPs) were dope…
  pubmed Wei J, Wang X, Xia Y, Zhao C 等 2025 置信度 0.82
• Wavelength- and polarization-dependent enhancement of the magneto-optical effect with Al-doped 4H-SiC.
  Al-doped 4H-SiC, a wide bandgap semiconductor, exhibits polarization rotation under a magnetic field similar to the magneto-optical effect after dressed-photon-phonon (DPP)-assisted annealing, which simultaneously irradiates the sample with a laser while apply…
  pubmed Du H, Kadowaki T, Tate N, Oki Y 等 2025 置信度 0.82
• Enhanced performance of Ga(2)O(3)-based MSM-PD by Fabry-Pérot microcavity.
  Ga 2 O 3 -based metal-semiconductor-metal (MSM) solar-blind photodetectors, valued for their wide bandgap and stability, are among the most promising options. However, key metrics such as detectivity, wavelength selectivity, and response time were largely cons…
  pubmed Wang T, He X, Xu H, Sun R 等 2025 Oct 1 置信度 0.82
• Artificial Solar-Blind Optosynapses Using Amorphous Gallium Oxide Phototransistors for Optical In-Sensor Neuromorphic Applications.
  Optoelectronic neuromorphic devices, which mimic the functionalities of the human eye and brain neural systems, have attracted significant interest for enabling highly energy-efficient computing systems for next-generation artificial intelligence applications.…
  pubmed Zhang Y, Chang K, Yan H, Huang CH 等 2025 置信度 0.82
• Minimizing interfacial energy losses via multifunctional cage-like diammonium molecules for efficient perovskite/silicon tandem solar cells.
  Wide bandgap (WBG) perovskites hold tremendous potential for enabling efficient perovskite/silicon tandem solar cells. However, interfacial energy losses at the perovskite/electron selective contact interface remain a substantial obstacle in approaching its th…
  pubmed Li X, Ying Z, Liu L, Wu J 等 2025 Sep 30 置信度 0.82
• Trace Detection of Staphylococcal Enterotoxin B Based on Hydrogen-Terminated Diamond Solution-Gate Field-Effect Transistor.
  Staphylococcal enterotoxin B is the most hazardous of the various toxins produced by Staphylococcus aureus . Thus, trace detection of SEB is essential for prevention, diagnosis, and treatment. In this work, an electrochemical platform was constructed to detect…
  pubmed Du Y, Lv Q, Jiang Y, Wang W 等 2025 Oct 14 置信度 0.82
• Submillimeter-Sized Neodymium Oxychloride Single-Crystal Dielectrics for 2D Electronics.
  2D dielectrics integrated with atomically thin semiconductors hold immense potential to address the scaling challenges in future nanoelectronics. However, existing 2D dielectrics are limited by insufficient dielectric constants, poor interfacial quality, and d…
  pubmed Xu W, Huang J, Jiang J, Liu P 等 2026 Jan 置信度 0.82
• Donor-Acceptor Pairs Near Silicon Carbide Surfaces.
  Donor-acceptor pairs (DAPs) in wide-bandgap semiconductors are promising platforms for the realization of quantum technologies, due to their optically controllable, long-range dipolar interactions. Specifically, Al-N DAPs in bulk silicon carbide (SiC) have bee…
  pubmed Bilgin A, Hammock IN, High AA, Galli G 2025 Oct 9 置信度 0.82
• Highly sensitive and spectrally tunable UV photodetectors via interface barrier engineering in floating-gate transistors.
  High-performance ultraviolet (UV) photodetectors require not only high responsivity and detectivity, but also strong spectral selectivity to suppress visible light interference. While wide-bandgap semiconductors are typically used, challenges in material growt…
  pubmed Huang B, Li X, Shi J, Hu J 等 2025 Oct 16 置信度 0.82
• O(2)-to-Ar Ratio-Controlled Growth of Ga(2)O(3) Thin Films by Plasma-Enhanced Thermal Oxidation for Solar-Blind Photodetectors.
  Ga 2 O 3 is an ultra-wide bandgap semiconductor material that has attracted significant attention for deep ultraviolet photodetector applications due to its excellent UV absorption capability and reliable stability. In this study, a novel plasma-enhanced therm…
  pubmed Jiang R, Xiao B, Lu Y, Liang Z 等 2025 Sep 11 置信度 0.82
• Heterointeraction-Induced Nucleation Promoting Vertical Growth and Suppressing Phase Separation for Efficient Wide-Bandgap Perovskite Solar Cells and Tandem Devices.
  As a key component of perovskite-based tandem photovoltaic devices, wide-bandgap (WBG) perovskite solar cells (PSCs) have been extensively explored recently. For WBG perovskite with mixed Cs/formamidinium (FA) cations and I/Br anions, it is challenging to cont…
  pubmed Li C, Wang Y, Gao W, Yang J 等 2025 置信度 0.82
• Wafer-Scale Manufacturing and Crack-Free Transferring of GaN-Based Membranes for Flexible Optoelectronics.
  Heterogeneously integrated devices have great demand for the freestanding wafer-level wide bandgap semiconductors in their single crystal membrane form. However, the current fabrication strategy is quite costly and low throughput. Here, quasi van der Waals epi…
  pubmed Gao Y, Zhou K, Liu Z, Wang L 等 2025 Dec 置信度 0.82
• Defect formation and modification of optical properties in β-Ga(2)O(3) via carbon ion irradiation.
  Precisely regulating the optical properties of β-Ga 2 O 3 crystals is critical for advancing optoelectronic devices such as solar-blind detectors, optical modulators, and Schottky barrier diodes. This study employed 15 MeV carbon (C) ions to irradiate &#…
  pubmed Li Z, Ma L, Zhao Y, Cai Q 等 2025 置信度 0.82
• Two-dimensional Janus 1T-ScTeX (X = Cl, Br, I) monolayers for high-efficiency energy conversion applications.
  In this paper, the properties of Janus 1T-ScTeX (X = Cl, Br, I) monolayers have been thoroughly examined based on first-principles calculations. The results confirm that these materials are stable and highly flexible. Each monolayer exhibits an indirect bandga…
  pubmed Jiang XL, Zhou GX, Yan TT, Qin XC 等 2025 置信度 0.82
• Exploring the structural, electronic, and transport properties in thickness-dependent two-dimensional Ga(2)O(3)induced by native defects.
  Understanding the effects of native oxygen vacancy (V O ) and gallium vacancy (V Ga ) in two-dimensional (2D) Ga 2 O 3 semiconductors is critical for optimizing device efficiency and developing innovative applications. In this work, the structural stability, e…
  pubmed Zeng H, Ma C, Hu LJ, Xue YR 等 2025 Oct 6 置信度 0.82
• Sub-Bandgap Photon-to-Current Conversion in Bismuth Vanadate Photoanodes and Its Impact on the Maximum Photocurrent Density Achievable for Water Splitting.
  The physical properties of bismuth vanadate (BiVO 4 ) make it an appealing semiconductor photoanode for water oxidation in photoelectrochemical cells that aim to produce hydrogen or other solar fuels. However, it has been estimated that its relatively wide ban…
  pubmed Ferreira CG, Ros C, Zhang M, Zhou G 等 2025 置信度 0.82
• Anomalous Raman signals in multilayer hexagonal boron nitride grown by chemical vapour deposition on metal foil catalysts.
  Hexagonal boron nitride (hBN), a two-dimensional (2D) wide bandgap material, serves as an ideal insulating substrate and a protection layer for other 2D materials, such as graphene and transition metal dichalcogenides (TMDs). Here, we report for the first time…
  pubmed Okonai T, Solís-Fernández P, Fukamachi S, Sun H 等 2025 Nov 18 置信度 0.82
• 2D materials in functional optoelectronics: recent advances and future prospects.
  Two-dimensional (2D) semiconductors, such as MXenes, transition metal dichalcogenides, black phosphorus, and emerging van der Waals heterostructures, have revolutionized the field of optoelectronics by offering exceptional electrical, optical, and mechanical p…
  pubmed Srivastava RP, Ranjan P, Kumar M, Katiyar AK 2025 Sep 25 置信度 0.82
• Photoinduced selective electrons transfer and secondary orbital splitting in CeO2 bulk.
  As a typical wide bandgap semiconductor and a ubiquitous constituent in catalytic systems for a variety of applications, the dynamical processes of photoinduced electrons transfer (PET) in CeO2 are crucial for advancing the understanding of semiconductor physi…
  pubmed Tang J 2025 置信度 0.82
• Buried SWCNTs Interlayer Promotes Hole Extraction and Stability in Inverted CsPbI(2.85)Br(0.15) Perovskite Solar Cells.
  Inverted (p-i-n) CsPbI x Br 3-x (x = 0~3) perovskite solar cells (PSCs) are of growing interest due to their excellent thermal stability and optoelectronic performance. However, they suffer from severe energy level mismatch and significant interfacial energy l…
  pubmed Yu F, Chen D, Xi H, Chai W 等 2025 Aug 29 置信度 0.82
• Generalized thermal rectifier model with optimal thermal rectification ratio and its application to Ga(2)O(3)-based semiconductors.
  Thermal rectification, arising from asymmetric heat transport under opposite temperature gradients, is essential for thermal management in electronics. We present a generalized optimization strategy for two-segment rectifiers based on Fourier's law, showing th…
  pubmed Wang W, Zheng JC, Wang HQ 2025 Sep 25 置信度 0.82
• Mechanoluminescent Aluminum Nitride Crystal for Super-Sensitive Optical Manometry, Thermometry and Force Sensing.
  AlN is a core material widely used as a substrate and heat sink in various electronic and optoelectronic devices. Introducing luminescent properties into intrinsic AIN opens new opportunities for next-generation intelligent sensors, self-powered displays, and …
  pubmed Zheng T, Woźny P, Soler-Carracedo K, Han D 等 2026 Jan 置信度 0.82
• Surface Reconstruction in Quasi-2D Perovskite Films Treated with Cesium Halide Nanocrystals: Halide Exchange or Phase Transformation.
  The formation of heterostructure interfaces from quantum dots (or nanocrystals) and lower-dimensional (2D or quasi-2D) materials enables interfacial and optoelectronic property tuning. However, this strategy has not been sufficiently characterized, for example…
  pubmed Son DI, Min S, An S, Lee D 等 2025 Sep 置信度 0.82
• Exploring the functional properties of the diamond-like quaternary compound Li(2)ZnGeS(4) for potential energy applications: a theoretical approach.
  It is anticipated that wide-bandgap semiconductors (WBGSs) would be useful materials for energy production and storage. A well-synthesized, yet scarcely explored, diamond-like quaternary semiconductor Li 2 ZnGeS 4 has been considered for this work. Herein, we …
  pubmed Celestine L, Nunsanga MT, Suman S, Zosiamliana R 等 2025 Sep 24 置信度 0.82
• Effects of Various Annealing on the Thermoluminescence Behavior of Hexagonal Boron Nitride: A Group III-Nitride Semiconductor.
  This study investigated the effects of different annealing methods on the dosimetric properties of the Group III-nitride semiconductor hexagonal boron nitride (h-BN) to get the optimal annealing corresponding to an ideal thermoluminescence (TL) glow curve. Two…
  pubmed Hatib M, Toktamis H 2025 置信度 0.82
• Direct band-gap monolayer phosphorene via pentagon-octagon-pentagon defects: highly anisotropic carrier transport and efficient photocatalytic activity.
  Vacancy defects in two-dimensional (2D) materials are not merely structural imperfections but can be strategically engineered to boost and tailor their intrinsic properties. In this work, we propose a novel 2D polymorph of phosphorene, featuring a periodic arr…
  pubmed Wu H, Li W, Li Q, Fu B 2025 Sep 18 置信度 0.82
• Research on a General SER Rate Prediction Model Based on a Set of Configuration Parameters Related to SER.
  This article comprehensively analyzes the new developments and challenges faced by several typical prediction models in the field of radiation effects in recent years. The models discussed include the RPP model, the extended RPP (rectangular parallelepiped) mo…
  pubmed Du S, Wang S, Chen S 2025 Aug 19 置信度 0.82
• Integrated LCOS-SLM-Based Laser Slicing System for Aberration Correction in Silicon Carbide Substrate Manufacturing.
  Silicon carbide (SiC), a wide-bandgap semiconductor, is renowned for its exceptional performance in power electronics and extreme-temperature environments. However, precision low-loss laser slicing of SiC is impeded by energy divergence and crack delamination …
  pubmed Wang H, Cao Q, Hou Y, Yu L 等 2025 Aug 13 置信度 0.82
• A Review of Novel Die Attach Materials for High-Temperature WBG Power Electronic Applications.
  Third-generation wide-bandgap (WBG) semiconductor power electronics exhibit excellent workability, but high-temperature packaging technology limits their applications. TLP, TLPS, and nanoparticle sintering have the potential to achieve a high-temperature-resis…
  pubmed Wu N, Li Y 2025 Aug 15 置信度 0.82
• Bright Blue Light Emission of ZnCl(2)-Doped CsPbCl(1)Br(2) Perovskite Nanocrystals with High Photoluminescence Quantum Yield.
  The future development of perovskite light-emitting diodes (LEDs) is significantly limited by the poor stability and low brightness of the pure-blue emission in the wavelength range of 460-470 nm. In this study, the Cl/Br element ratio in CsPbCl x Br 3-x perov…
  pubmed Feng B, Fang Y, Wang J, Yuan X 等 2025 Aug 9 置信度 0.82
• Interlayer-active layered oxysulfides NaMTiO(2.2)S(1.8) (M = Nd, Sm) with an n = 1 Ruddlesden-Popper structure acting as photocatalysts for visible light water splitting.
  Layered compounds that utilize interlayer space as a reactive field are known as "interlayer-active" compounds and have been gaining attention, particularly in photocatalysis for water splitting. However, most of the reported "interlayer-active" photocatalysts…
  pubmed Ishii Y, Suzuki H, Kato D, Tomita O 等 2025 Sep 17 置信度 0.82
• Improved photoinduced charge carrier separation through the built-in electric field in a rationally designed Ag-ZnMn(2)O(4)/exfoliated g-C(3)N(4), a plasmonic p-n junction for solar-driven reduction of dissolved Cr(VI).
  Sensitization of wide bandgap semiconductors by coupling with a low-band-gap semiconductor to improve photoinduced charge carrier separation by the built-in electric field is one of the attractive approaches to develop an efficient photocatalyst. Here we prese…
  pubmed Gupta N, Biswas SK, Sarkar A 2025 Aug 置信度 0.82
• Noble Metals Doping in Lead-Free Double Perovskite Single Crystals: Achieving Near-Infrared to X-ray Broadband Photodetection.
  Semiconductor materials capable of broadband photodetection, spanning X-rays to near-infrared (NIR), are essential for applications in medical imaging, industrial inspection, security, and telecommunications. Conventional photodetectors like Si, Ge, InGaAs, an…
  pubmed Valli D, Vanden Brande R, Herreman V, Li Q 等 2025 Aug 置信度 0.82
• Double Heterostructures for Monolayer Materials with Record Quantum Efficiency.
  2D semiconductor materials have shown great potential and advantages for a wide variety of optoelectronic devices, especially compact and integrated light-emitting diodes (LEDs) and lasers. However, the lack of a type-I double-heterostructure has severely hind…
  pubmed Zhong Y, Li Y, Feng J, Li C 等 2025 置信度 0.82
• Suppressing Open-Circuit Voltage Loss in Perovskite Solar Cells via Ligand-Assisted Crystallization Dynamics Regulation Strategy.
  Despite the dazzling progress since the emergence of perovskite solar cells (PSCs), a significant ideal-reality discrepancy with respect to the open-circuit voltage (V OC ) still reminds the primarily weak parameter, inducing the limited power conversion effic…
  pubmed Dong H, Qu J, Wang S, Chen D 等 2025 Oct 置信度 0.82
• Two-photon absorption induced photocurrent of a β-Ga(2)O(3) film photodetector.
  The ultra-wide bandgap and diverse material systems of gallium oxide (Ga 2 O 3 ) make it an attractive candidate for cutting-edge semiconductor research. In this work, two-photon absorption induced photocurrent generation in a β -Ga 2 O 3 film photodetec…
  pubmed Zhang B, Dong D, Zhao H, Wu Z 等 2025 Feb 10 置信度 0.82
• Broadband stimulated Raman hyperspectral imaging of cells and semiconductors with synchronized fiber and solid-state sources.
  We demonstrate broadband hyperspectral stimulated Raman scattering (SRS) microscopy covering over 2000 cm -1 , which is achieved by two tunable Stokes light sources synchronized with a pump light source. Specifically, a fiber optical parametric oscillator and …
  pubmed Takahashi S, Kamei K, Oguchi K, Kuruma K 等 2025 Feb 10 置信度 0.82
• Boosting near-infrared absorbance and exciton emission in perovskite-inspired Cs(3)Sb(2)I(9) through Sn doping.
  Antimony-based perovskite materials have emerged as promising alternatives to lead-based hybrids, but their wide bandgaps and weak photoluminescence (PL) emission hinder their applicability in optoelectronic devices. In this study, a strategic doping of tin (S…
  pubmed Ming Z, Guo Y, Wu P, Zhang C 等 2025 Jul 1 置信度 0.82
• Growth of Fractal Crystalline C(60) Films on Hexagonal Boron Nitride With Efficient Charge Transport Property.
  The growth of organic semiconductor films with long-range ordered structures on device substrates is crucial for transistor performance and functionality. Wide-bandgap 2D materials, characterized by their atomic-level cleanness and inert surface properties, ar…
  pubmed Xue D, Xiao Y, Wei Y, Zhang Y 等 2025 Sep 置信度 0.82
• Toward Smart SiC Self-Powered Deep Ultraviolet Photodetectors.
  The reasonable construction of a heterojunction is promising for wide bandgap semiconductors in smart self-powered deep ultraviolet (DUV) photodetection. In this work, PbI 2 nanosheet (NS) is prepared directly on the wide bandgap semiconductor of a SiC wafer f…
  pubmed Gao S, Ge L, Wang G, Wan J 等 2025 置信度 0.82
• Chiral Aza-Helicene Phosphonic Acids for Stabilizing Efficient Perovskite-Silicon Tandem Solar Cells.
  The popular planar carbazole-based hole-selective self-assembled molecules (SAMs) for perovskite solar cells (PSCs) suffered from intrinsic instability toward electric potential, heat, and light illumination. To address this issue, herein, we report a kind of …
  pubmed Yan B, Zhang D, Li R, Wei J 等 2025 Sep 22 置信度 0.82
• Selective Crystallization Delay in Wide-Bandgap Perovskites Enables Initial Homogeneous Phase for Square Centimeter Perovskite/Organic Tandem Solar Cells.
  Mixed halide wide-bandgap (WBG) perovskites, used in high-performance perovskite/organic tandem solar cells (TSCs), are prone to phase segregation under light irradiation. Particularly, the initial inhomogeneous halide phase distribution in WBG perovskites can…
  pubmed Zheng J, Chen W, Wang Z, Kang S 等 2025 置信度 0.82
• Data-Driven Description of the Lattice Thermal Conductivity of Two-Dimensional Materials.
  Two-dimensional (2D) materials hold great promise for advanced thermal management due to their unique phonon transport properties, but 2D semiconductors with a lattice thermal conductivity (κ L ) of more than 10 W/mK remain scarce. Using high-throughput …
  pubmed Chen D, Cai H, Xuan X, Hu Z 等 2025 Aug 14 置信度 0.82
• Direct Bonding of 6-in. SiC/Si Wafer with Enhanced Thermal Interface.
  Silicon-based complementary metal-oxide-semiconductor (CMOS) technology dominates the semiconductor industry but faces fundamental limitations in high-temperature and high-power applications due to its low thermal conductivity and narrow bandgap. Heterogeneous…
  pubmed Huang S, Liu F, Liu J, Mao R 等 2025 置信度 0.82
• The Impact of Single-Event Radiation on Latch-Up Effect in High-Temperature CMOS Devices and Its Mechanism.
  This paper investigates the latch-up effect in CMOS devices based on a 28 nm CMOS process within the temperature range of 200 K to 450 K using Sentaurus Technology Computer-Aided Design (TCAD) simulation, with a particular focus on the single-event latch-up (S…
  pubmed Wang B, Cui J, Lv L, Wu L 2025 Jun 30 置信度 0.82
• Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes.
  This paper investigates the short-circuit characteristics of 1.2 kV symmetrical and asymmetrical trench-gate SiC MOSFETs. Based on the self-designed short-circuit test platform, single and repetitive short-circuit tests were carried out to characterize the sho…
  pubmed Liu L, Pang B, Li S, Zhen Y 等 2025 Jun 29 置信度 0.82
• Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices.
  A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power electronic sy…
  pubmed Su S, Cao Y, Zhang W, Zhang X 等 2025 Jun 22 置信度 0.82
• Wide-/Narrow-Bandgap Heterojunction for High Performance Differential Photodetector with Tunable Response.
  Amid the rapid advancement in modern photonics and artificial intelligence, optoelectronic devices with enhanced functionalities and high performance hold great promise for complex photonic integrated circuits. Herein, a novel tunable differential photodetecto…
  pubmed Ren Z, Zhu H, Lai W, Zhai Y 等 2025 置信度 0.82
• Perovskite Tandems: the Next Big Leap in Photovoltaic Technology.
  The global demand for clean energy is driving the need for next-generation solar technologies with higher power conversion efficiencies. Multijunction solar cells, which stack absorbers with cascaded bandgaps, offer a compelling path forward by more efficientl…
  pubmed Luo C, Gu H, Zhang B, Park SM 等 2025 Dec 置信度 0.82
• Infrared Detection Achieved by Controlling Thermionic Emission in Organic Transistors.
  Commercial inorganic infrared (IR) photodetectors have important applications in night vision, medical imaging, remote sensing, and other fields, but still face the challenges of operating at low temperatures and high costs. Organic semiconductor (OSC)-based I…
  pubmed Wang Y, Zhao S, Rong B, Fu Y 等 2025 Aug 6 置信度 0.82
• Optical anisotropy of Bi(2)SeO(5) and near-field characterization of its waveguide modes.
  Anisotropic van der Waals (vdW) materials have attracted increasing attention in nanophotonics due to their unique optical properties. As a stable vdW material with a high dielectric constant ( κ ) and a wide bandgap, Bi 2 SeO 5 shows significant potenti…
  pubmed Tang J, Li Y, Wang J, Zhu Y 等 2025 Aug 7 置信度 0.82
• Engineering Stable Cu-Doped SrTiO(3) Perovskites for Enhanced Photocatalytic CO(2) Reduction.
  Photocatalytic CO 2 reduction presents a sustainable pathway for renewable energy generation while addressing critical environmental challenges. Strontium titanate (SrTiO 3 ) has emerged as a highly efficient wide-bandgap semiconductor photocatalyst for CO 2 r…
  pubmed Bajiri MAM, Khan N, Albornoz Diaz JCC, Avansi W Jr 等 2025 Aug 4 置信度 0.82
• Deterministic Structural Distortion in Mn(2+)-Doped Layered Hybrid Lead Bromide Perovskite Single Crystals.
  Dilute magnetic doping in wide-bandgap semiconductors has attracted significant interest due to its potential for tailored optical, spintronic, and spin-photonic properties. While extensive research has explored the optical and magnetic properties of these dop…
  pubmed Yadav P, Moon K, Shoaib M, Thapa P 等 2025 Jul 29 置信度 0.82
• Wafer-Scale Polarity Engineering of Nitrides Enabled High-Mobility Two-Dimensional Electron Gas and Defective Luminescence.
  Nitride materials, renowned for their unique polarity properties, underpin modern electronics and photonics. In particular, the polarity discontinuity is expected to form two-dimensional electron gases (2DEGs), which are highly desirable for many applications,…
  pubmed Liu J, Chen Q, Mao R, Huang S 等 2025 Jul 30 置信度 0.82
• Growth and Characterization of n-Type Hexagonal Ta(2)O(5):W Films on Sapphire Substrates by MOCVD.
  Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta 2 O 5 ( δ -Ta 2 O 5 ) films doped with tungsten (W) were deposited on α -Al 2 O 3 (0001) by metal-organic chemical vap…
  pubmed Ma X, Li Y, Liu X, Chen D 等 2025 置信度 0.82
• Growth of Zn-N Co-Doped Ga(2)O(3) Films by a New Scheme with Enhanced Optical Properties.
  Gallium oxide (Ga 2 O 3 ), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga 2 O 3 still need to be impro…
  pubmed Liao D, Zhang Y, Wang R, Yan T 等 2025 置信度 0.82
• Recent Advances in TiO(2)-Based Photocatalysts for Efficient Water Splitting to Hydrogen.
  Titanium dioxide (TiO 2 ) has been widely used as a potential candidate for the production of green hydrogen using the artificial photosynthesis approach. However, the wide bandgap (∼3.3 eV) of anatase TiO 2 makes it difficult to absorb a large fraction…
  pubmed Nisar M, Khan N, Qadir MI, Shah Z 2025 置信度 0.82
• Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen-Oxygen Ratios.
  Silicon oxynitride (SiO x N y , hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO 2 ) and silicon nitride (Si 3 N 4 ). Through systematic compositional ratio adjustments, the refractive index can be precisely tu…
  pubmed Chen WJ, Liu YC, Wang ZY, Gu L 等 2025 Jun 20 置信度 0.82
• Van Der Waals Integration of 4-Inch Single-Crystalline III-Nitride Semiconductors.
  Heteroepitaxy III-nitride semiconductors on 2D materials, characterized by a van der Waals (vdW) interface, enables strain relaxation, reduction in dislocation density, and facile release from substrate. However, the limited wettability of 2D materials and wea…
  pubmed Wen Y, Ning J, Wu H, Zhang H 等 2025 Sep 置信度 0.82
• Strategic Core-Shell Integration for Advancing Z-Scheme Heterojunctions: Interface-Engineered ZnIn(2)S(4)/Ag(2)WO(4)@Ag Ternary Architecture for Enhanced Visible-Light-Driven Photocatalytic H(2) Production and Pollutant Degradation.
  The spatial inhomogeneity of interfacial modifications, despite conventional approaches like co-catalyst deposition and dopant incorporation, presents a critical bottleneck in achieving optimal charge carrier dynamics and sustained photocatalytic performance a…
  pubmed Urupalli B, Kim DS, Shin GS, Oh GJ 等 2025 Aug 置信度 0.82
• The Study of the Transient Dose Rate Effect on ROIC Pixels in Ultra-Large-Scale Infrared Detectors.
  Infrared image sensors are crucial across various industries. However, with technological advancements, the growing scale of infrared image sensors has made the impact of transient dose rate effects increasingly significant. It is necessary to conduct relevant…
  pubmed Liu Y, Wang B, Tang Z, Chen M 等 2025 Jun 12 置信度 0.82
• Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe(2).
  Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgap…
  pubmed Li J, Xie Z, Zhao T, Li H 等 2025 Jun 12 置信度 0.82