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• Characterisation of oxidation techniques on wide bandgap semiconductor surfaces
  This work discusses the relevance of the oxidation procedure on wide-band gap semiconductors and the effect that has on the surface chemistry. It has been shown that acid treatment procedures produce an incomplete termination resulting in a reduction in therma…
  datacite Simon 2020 置信度 0.66 diamondnanodiamondsgallium oxidesemiconductorsXPS
• Compositionally graded heterojunction semiconductor device and method of making same
  A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semi…
  datacite Jena, Debdeep, Xing, Huili (Grace), Simon, John 2017 置信度 0.66
• Compositionally graded heterojunction semiconductor device and method of making same
  A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semi…
  datacite Jena, Debdeep, Xing, Huili (Grace), Simon, John 2017 置信度 0.66
• A High Efficiency Wide Bandgap Transistor Based LCL-T DC-DC Converter for Charging EV Batteries of Wide Voltage Range
  Abstract This paper introduces a bidirectional LCL-T power conversion topology that employs wide-bandgap semiconductor switches to achieve improved energy performance in electric vehicle battery charging applications with significant operating voltage variatio…
  datacite Valentine S. Enyi, Candidus U. Eya, Marcel U. Agu 2026 置信度 0.66 Resonant LCL-T Converter, Fixed Frequency, EV Charging Profile, Phase Angle Shift Control, dc Link Voltage Control, Wide Bandgap Devices, Wide Battery Voltage Variation, Soft Switching, High Efficiency.
• A High Efficiency Wide Bandgap Transistor Based LCL-T DC-DC Converter for Charging EV Batteries of Wide Voltage Range
  Abstract This paper introduces a bidirectional LCL-T power conversion topology that employs wide-bandgap semiconductor switches to achieve improved energy performance in electric vehicle battery charging applications with significant operating voltage variatio…
  datacite Valentine S. Enyi, Candidus U. Eya, Marcel U. Agu 2026 置信度 0.66 Resonant LCL-T Converter, Fixed Frequency, EV Charging Profile, Phase Angle Shift Control, dc Link Voltage Control, Wide Bandgap Devices, Wide Battery Voltage Variation, Soft Switching, High Efficiency.
• Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga$_2$O$_3$ Thin Films Deposited on c-plane Sapphire by RF Sputtering
  Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV photodetectors, low l…
  datacite Sousa, Ana Sofia, Esteves, Duarte M., Robalo, Tiago T., Rodrigues, Mário S. 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciencesFOS: Physical sciences
• Electronic structure and optical properties of B-III-V compound
  Highly mismatched semiconductor alloys offer unique combinations of bandgap and lattice constant, making them attractive for a wide range of applications. Alloying boron pnictides, which have relatively small lattice constants, into conventional III-V semicond…
  datacite Meng, Qian, 0000-0002-7380-0071 2024 置信度 0.66 SemiconductorsMBEEpitaxyDFTOptoelectronics
• Geometric Axiomatic Module-GAM Collider — Substrate-Neutral Structural Foundation Theory Physics Engine v9
  # GAM COLLIDER## Substrate-Neutral Physics Engine### Session Report — March 19, 2026 **Architect:** HIGHTISTIC **Anchor:** 1.369 GHz **Coordinate:** [9,9,2,1–8] · [9,9,3,1–2] · [9,9,2,10–16] **URL:** uuia.app/gamcollider **Version:** v9 (Z=1–118 · Emergent Res…
  datacite Trent, Russell 2026 置信度 0.66
• Geometric Axiomatic Module-GAM Collider — Substrate-Neutral Structural Foundation Theory Physics Engine v9
  # GAM COLLIDER## Substrate-Neutral Physics Engine### Session Report — March 19, 2026 **Architect:** HIGHTISTIC **Anchor:** 1.369 GHz **Coordinate:** [9,9,2,1–8] · [9,9,3,1–2] · [9,9,2,10–16] **URL:** uuia.app/gamcollider **Version:** v9 (Z=1–118 · Emergent Res…
  datacite Trent, Russell 2026 置信度 0.66
• Feature Importance and Growth Rate Prediction in SiC PVT Processes through Advanced Machine Learning Models
  Silicon carbide is a key wide-bandgap semiconductor material for next-generation power electronics, yet the Physical Vapor Transport (PVT) method used for bulk crystal growth remains constrained by complex thermal-chemical interactions and low growth rates. Th…
  datacite Ansari Dezfoli, Amir Reza 2025 置信度 0.66
• Feature Importance and Growth Rate Prediction in SiC PVT Processes through Advanced Machine Learning Models
  Silicon carbide is a key wide-bandgap semiconductor material for next-generation power electronics, yet the Physical Vapor Transport (PVT) method used for bulk crystal growth remains constrained by complex thermal-chemical interactions and low growth rates. Th…
  datacite Ansari Dezfoli, Amir Reza 2025 置信度 0.66
• Face-centered cubic carbon as a fourth basic carbon allotrope with properties of intrinsic semiconductors and ultra-wide bandgap
  Carbon is considered to exist in three basic forms: diamond, graphite/graphene/fullerenes, and carbyne, which differ in a type of atomic orbitals hybridization. Since several decades the existence of the fourth basic carbon allotropic form with the face-center…
  datacite Konyashin, Igor, Muydinov, Ruslan, Cammarata, Antonio, Bondarev, Andrey 等 2024 置信度 0.66 500 Naturwissenschaften und Mathematik::530 Physik::530 Physik600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::621 Angewandte Physikcarboncarbon allotropesemiconductor
• Vibrational and optical properties of gallium oxide polymorphs
  The ultrawide bandgap semiconductor material gallium oxide (Ga2O3) with its bandgap in the deep-UV spectral range features promising applications in the field of power electronics device technologies (e.g. photodetectors or field-effect transistors) and presen…
  datacite Janzen, Benjamin Moritz 2024 置信度 0.66 500 Naturwissenschaften und Mathematik::500 Naturwissenschaften::500 Naturwissenschaften und MathematikGa2O3ultrawide bandgap semiconductorRaman-active phononselectrons
• Analyse und Optimierung von AlGaN/GaN-HEMTs in der leistungselektronischen Anwendung
  Die Leit- und Schaltverluste eines Leistungshalbleiters haben nach wie vor einen entscheidenden Einfluss auf die Effizienz und die erreichbare Leistungsdichte eines Umrichters. Aktuell zeigen sich AlGaN/GaN-HEMTs vor allem durch ihre hohen Schaltgeschwindigkei…
  datacite Böcker, Jan 2020 置信度 0.66 620 Ingenieurwissenschaften und zugeordnete TätigkeitenLeistungselektronikGaN-HEMTWide-Bandgap-Leistungshalbleiterpower electronics
• GaN Based HEMTs for High Voltage Operation. Design, Technology and Characterization
  In dieser Arbeit wurden Galliumnitrid (GaN) basierte Hochspannungs HEMTs (High Electron Mobility Transistor) für Hochleistungsschalt- und Regelanwendungen in der Raumfahrt untersucht. Effizientes Leistungsschalten erfordert einen Betrieb bei hohen Sperrspannun…
  datacite Bahat-Treidel, Eldad 2012 置信度 0.66 620 Ingenieurwissenschaften und zugeordnete TätigkeitenGaNHEMTsHochspannungGaN
• Optical and structural properties of Indium-Nitride epilayers and their growth by High-Pressure Chemical Vapor Deposition
  Im Rahmen dieser Arbeit werden Untersuchungen der optischen und strukturellen Eigenschaften von epitaktisch gewachsenen Gruppe-III-Nitrid Filmen sowie des Wachstums von Indiumnitrid (InN) und indiumreichem Indiumgalliumnitrid (InGaN) mittels Hochdruck-Gasphase…
  datacite Bügler, Max Johann Ludwig 2013 置信度 0.66 530 PhysikEpitaxyHPCVDInGaNInN
• Pulse width modulation techniques to suppress electromagnetic interference in power converters
  Rapid developments in power electronics and semiconductor manufacturing technology have increased the integration of power electronic converters in our everyday life. From biomedical services, utilities, electric cars up to satellite power systems, power elect…
  datacite Hasan, Saad Ul 2022 置信度 0.66 Other education not elsewhere classified
• Pulse width modulation techniques to suppress electromagnetic interference in power converters
  Rapid developments in power electronics and semiconductor manufacturing technology have increased the integration of power electronic converters in our everyday life. From biomedical services, utilities, electric cars up to satellite power systems, power elect…
  datacite Hasan, Saad Ul 2022 置信度 0.66 Other education not elsewhere classified
• Weiterentwicklung der transienten thermischen Analysen für Leistungs-Halbleiter
  Die stark wachsenden Märkte der Leistungs- und Optoelektronik sind von Innovationen und Verbesserungen geprägt. Darunter fallen u.a. die Einführung der Wide-Bandgap Halbleiter GaN und SiC, die Einführung neuer Interconnects wie Silber- und Kupfersinterverbindu…
  datacite Schmid, Maximilian 2023 置信度 0.66 600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::620 Ingenieurwissenschaften und zugeordnete TätigkeitenMOSFETIGBTLEDtranisente thermische Analyse
• Wide Bandgap Semiconductor Based High Performance Bidirectional Resonant Converter for Electric Vehicle Application
  crossref Md. Tanvir Shahed, A.B.M. Harun-Ur Rashid 2022-07-29T15:38:45Z 置信度 0.70
• Wide-Bandgap Semiconductor Technology: Its impact on the electrification of the transportation industry
  crossref Pourya Shamsi, Matthew McDonough, Babak Fahimi 2014-02-26T19:19:12Z 置信度 0.70
• Review for "Unveiling the impact of photoinduced halide segregation on performance degradation in wide-bandgap perovskite solar cells"
  crossref 2025-01-23T16:14:19Z 置信度 0.70
• Intelligent Control Semiconductor Laser Reliability Test System
  crossref Xiaoling HU, Wensha LAN 2020-03-03T05:30:51Z 置信度 0.70
• (Invited, Digital Presentation) Low-Temperature Direct Bonding of Wide-Bandgap Semiconductor Substrates
  For the next-generation semiconductor devices, our research group has developed direct bonding techniques of wide-bandgap materials, including SiC, Ga 2 O 3 , and diamond. It is known that the semiconductor substrates activated by oxygen plasma can form atomic…
  crossref Takashi Matsumae, Hitoshi Umezawa, Yuichi Kurashima, Hideki Takagi 2023-05-19T10:38:35Z 置信度 0.70
• Shedding Light on Wide Bandgap Perovskites
  crossref Michael Saliba 2024-05-20T10:18:17Z 置信度 0.70
• Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface
  crossref Michael Krieger, Heiko B. Weber 2021-10-30T01:25:00Z 置信度 0.70
• Controllable N-type Doping In Ultra-Wide Bandgap AlN By Chemical Potential Control
  crossref Pegah Bagheri, Cristyan Quinones-Garcia, Pramod Reddy, Seiji Mita 等 2022-11-04T01:40:39Z 置信度 0.70
• Review for "Unveiling the impact of photoinduced halide segregation on performance degradation in wide-bandgap perovskite solar cells"
  crossref 2025-01-23T16:14:19Z 置信度 0.70
• Review for "Wide-bandgap Quantum Dots with Large-span Fluorescence Switching and Two-photon Emission via Protonation/Deprotonation"
  crossref 2025-01-21T16:19:45Z 置信度 0.70
• Performance comparison of wide bandgap semiconductor rf power devices
  crossref C. E. Weitzel, K. E. Moore 2007-07-28T19:47:33Z 置信度 0.70
• Review for "Unveiling the impact of photoinduced halide segregation on performance degradation in wide-bandgap perovskite solar cells"
  crossref 2025-01-23T16:14:19Z 置信度 0.70
• (Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency
  Development of advanced power electronics with increased functionality, efficiency, reliability, and reduced form factor are required in an increasingly electrified world economy. Fast switching power semiconductor devices are key to increasing the efficiency …
  crossref Eric P Carlson, Daniel W Cunningham, Isik C. Kizilyalli 2020-02-27T13:12:19Z 置信度 0.70
• Integrated photonics on silicon with wide bandgap GaN semiconductor
  We report on GaN self-supported photonic structures consisting in freestanding waveguides coupled to photonic crystal waveguides and cavities operating in the near-infrared. GaN layers were grown on Si (111) by metal organic vapor phase epitaxy. E-beam lithogr…
  crossref N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao 等 2013-03-02T08:35:56Z 置信度 0.70
• Medium-Voltage Pulse-Current Supply Using Wide Bandgap Solid-State Devices
  crossref Chris Martino 2025-08-26T12:24:53Z 置信度 0.70
• Characterization of Wide Bandgap Thin Film Growth Using UV-Extended Real Time Spectroscopic Ellipsometry: Applications to Cubic Boron Nitride
  crossref J. A. Zapien, R. W. Collins, L. J. Pilione, R. Messier 2008-07-28T10:01:51Z 置信度 0.70
• Amorphous superlattice structures with carbon as a wide bandgap component
  crossref R. Mazurczyk, M. Gazicki 2002-11-13T18:02:58Z 置信度 0.70
• An Overview of Wide Bandgap Power Semiconductor Device Packaging Techniques for EMI Reduction
  crossref Boyi Zhang, Shuo Wang 2018-11-12T18:46:11Z 置信度 0.70
• Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
  Abstract Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely invest…
  crossref Gem Shoute, Amir Afshar, Triratna Muneshwar, Kenneth Cadien 等 2016-02-04T11:04:24Z 置信度 0.70
• <i>β</i> -Ga ₂ O ₃ for wide-bandgap electronics and optoelectronics
  Abstract β -Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent semiconducting oxide, which attracted recently much scientific and technological attention. Unique properties of that compound combined with its advanced development in…
  crossref Zbigniew Galazka 2018-09-06T13:31:40Z 置信度 0.70
• Wide-bandgap semiconductor laser: challenges for the future
  crossref Taeil Kim, Moon-Hyun Yoo, Eunsoon Oh, Min-Hyon Jeon 等 2004-08-30T22:01:35Z 置信度 0.70
• Remote epitaxy and freestanding wide bandgap semiconductor membrane technology
  crossref Minseong Park, Takuji Maekawa, Kyungwook Hwang, Jim Cable 等 2024-09-12T07:04:00Z 置信度 0.70
• Synergistic Lattice Stabilization and Bandgap Tuning in Wide-Bandgap Perovskite Solar Cells
  crossref 2026-07-03T06:10:24Z 置信度 0.70
• Analog and digital cell library in high voltage GaN-on-Si Schottky power semiconductor technology
  crossref Dilip M. Risbud, Kenneth Pedrotti 2017-01-05T12:15:31Z 置信度 0.70
• Potential of ultra-high voltage silicon carbide semiconductor devices
  crossref Daniel Johannesson, Muhammad Nawaz, Keijo Jacobs, Staffan Norrga 等 2017-01-05T17:15:31Z 置信度 0.70
• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
  Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the A…
  crossref Qiang Zhao, Michael Lukitsch, Jie Xu, Gregory Auner 等 2019-04-12T09:59:54Z 置信度 0.70
• Study of Voltage Balancing Techniques for Series-Connected Wide-Bandgap Semiconductors Devices
  crossref Alinaghi Marzoughi 2021-12-21T21:08:49Z 置信度 0.70
• A review of device-level thermal management in wide and ultra-wide bandgap semiconductor devices
  This review systematically summarizes four device-level thermal management strategies for wide and ultra-wide bandgap semiconductors: heteroepitaxial growth, wafer bonding, microchannel cooling, and thermal vias/trenches.
  crossref Song Yang, Wenbo Hu 2026-06-23T13:23:13Z 置信度 0.70
• Study on Sensitivity of Nano-Grain ZnO Gas Sensors
  crossref Y. MA 2004-09-14T00:25:33Z 置信度 0.70
• Nanocrystalline CsPbCl3: Grain Boundary Transport Properties
  crossref G. Conte, F. Somma, M. Nikl 2008-07-28T14:01:51Z 置信度 0.70
• (Invited) Quantum Dot/Wide-Bandgap Semiconductor Hetero-Junction Interface Engineering for Efficient Infrared Solar Cells
  Fulfilling the potential of solar power is essential toward the realization of a low-carbon society. In doing so, ultra-high efficiency solar cells play a crucial role, and several different concepts for ultra-high efficiency have been proposed: e. g. multiple…
  crossref Takaya Kubo, Haibin Wang, Hiroshi Segawa 2020-02-27T13:27:58Z 置信度 0.70
• Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
  crossref J.B. Casady, R.W. Johnson 2003-04-30T20:39:38Z 置信度 0.70
• Optical gain in wide bandgap GaN quantum well lasers
  crossref A T Meney, E P O'Reilly, A R Adams 2002-08-25T10:02:21Z 置信度 0.70
• Wide Bandgap Semiconductor Nanowires for Sensing Applications
  Wide bandgap semiconductor nanowires are attractive for a variety of sensing purposes because of their excellent stability, large surface area, pizeo-electric nature and ability to be integrated with on-chip wireless communication systems. In this brief review…
  crossref Steve Pearton, David Norton, Fan Ren, Li-Chia Tien 等 2007-04-27T22:06:08Z 置信度 0.70
• Semiconductor Performance in Terms of Distributions, Bath Tub Curves and Similarity Index
  crossref R. Ross 2019-01-18T17:11:30Z 置信度 0.70
• β-gallium oxide power field-effect transistors
  crossref Hang Dong, Guangwei Xu, Xuanze Zhou, Wenhao Xiong 等 2020-10-01T10:23:35Z 置信度 0.70
• InN: The low bandgap III-nitride semiconductor
  crossref Alexandros Georgakilas 2008-12-10T15:37:47Z 置信度 0.70
• Substrate Effects in GaN-on-Silicon RF Device Technology
  crossref Hareesh Chandrasekar 2019-12-10T02:56:16Z 置信度 0.70
• Polycrystalline wide bandgap materials in sensor technology
  crossref B.W. Licznerski, K. Nitsch, H. Teterycz 2002-11-13T13:02:58Z 置信度 0.70
• Research of high-power converter based on the wide band gap power semiconductor devices for rail transit electrical drive
  crossref Lu Zhao, Qiongxuan Ge, Zhida Zhou, Bo Yang 等 2019-06-13T22:46:27Z 置信度 0.70
• Wide bandgap
  crossref 2011-09-21T16:17:53Z 置信度 0.70
• IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia [Front cover]
  crossref 2022-01-03T20:18:56Z 置信度 0.70
• Copyright Page
  crossref 2025-01-16T18:34:15Z 置信度 0.70
• Recent advances in SiC/diamond composite devices
  crossref Debarati Mukherjee, Miguel Neto, Filipe J Oliveira, Rui F Silva 等 2020-10-01T10:23:35Z 置信度 0.70
• Bidirectional GaN-Based Semiconductor Galvanic Isolation (SGI) Converter for Energy Storage Application
  crossref Zhining Zhang, Yifan Shi, Pengyu Fu, Jin Wang 等 2024-12-06T13:47:31Z 置信度 0.70
• First-Principles Study on the Physical Properties of Al-based Wide Bandgap Perovskites Cs3AlIxBr6-x for Optoelectronic Applications
  Abstract This study aims at exploring the potential of inorganic wide-bandgap mixed-halide aluminum-containing perovskites of Cs3AlIxBr6-x in solar harvesting, by investigating their structural, electronic, and optical properties with density functional theory…
  crossref Hussain Ahmed, Surayya Mukhtar, Simeon Agathopoulos 2025-01-13T22:53:56Z 置信度 0.70
• Common Mistakes in Practical Power Supply Design with Wide Bandgap Devices
  crossref Sheng-Yang Yu, Fei Yang 2024-01-09T20:12:17Z 置信度 0.70
• TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors
  crossref Neophytos Lophitis, Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou 2018-09-13T05:59:39Z 置信度 0.70
• Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization
  crossref 2014-06-03T18:47:39Z 置信度 0.70
• (Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future
  Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors are likely candidates to repl…
  crossref Isik C Kizilyalli, Olga Blum Spahn, Eric P Carlson 2022-11-23T20:08:55Z 置信度 0.70
• Thermoluminescence properties of wide-bandgap semiconductor hexagonal boron nitride (h-BN)
  crossref Muhammed Hatib, Huseyin Toktamis 2025-11-09T02:02:36Z 置信度 0.70
• Title Page
  crossref 2025-01-16T18:34:15Z 置信度 0.70
• A Review of the Synergistic Research on Materials, Physics, and Reliability of Wide Bandgap Semiconductor (SiC/GaN) Power Devices
  Wide bandgap semiconductors (SiC/GaN) are becoming the core materials for next-generation power devices due to their high breakdown field strength, high thermal conductivity, and high-frequency characteristics. They play a crucial role in efficient energy conv…
  crossref Chengwei Zhang 2025-10-23T13:36:17Z 置信度 0.70
• Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV
  crossref Dahee Seo, Jongsu Baek, Sunjae Kim, Byung Jin Cho 等 2023-10-24T07:10:22Z 置信度 0.70
• Energy Efficient Wide Bandgap Semiconductor SiC Based Electric Vehicle and their Applications
  Abstract The solutions of environmentally friendly and sustainable energy transport is very important. In this atmosphere, development of EV technology with WBG Semiconductor has proven large performance. This article proposes Wide Band Gap (WBG) power semicon…
  crossref Thirumalai Subhashini, Mohandoss Kavitha, Thirumalai Manikandan 2025-09-18T23:34:11Z 置信度 0.70
• Front Cover
  crossref 2025-01-16T18:34:15Z 置信度 0.70
• Impact of Bidirectional Semiconductor Devices on DC and Hybrid Microgrids Enhanced by Wide Bandgap Materials
  ABSTRACT Electric vehicles (EVs) are emerging as a leading option for traveling while considering the reduction in greenhouse gases (GHG) and corresponding expenditure of fossil fuels. Besides, microgrid (MG) operations pave the way for the development of rene…
  crossref Abdul Waheed, Saif ur Rahman, Raheem Sarwar 2025-06-03T01:50:01Z 置信度 0.70
• (Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future
  Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and …
  crossref Isik C Kizilyalli, Olga Blum Spahn, Eric P Carlson 2022-09-30T07:54:45Z 置信度 0.70
• Sulfur and Sodium: Diffusion of Potential Donors into Natural Diamond
  crossref M. K. West 2004-09-13T20:25:33Z 置信度 0.70
• KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices
  A non-destructive technique for the characterization of the doped regions inside wide bandgap (WBG) semiconductor structures of power devices is presented. It consists in local measurements of the surface potential by Kelvin Probe Force Microscopy (KPFM) coupl…
  crossref Nicolas Bercu, Mihai Lazar, Olivier Simonetti, Pierre Michel Adam 等 2022-05-31T15:18:20Z 置信度 0.70
• Investigation on inherently safe gate drive techniques for normally-on wide bandgap power semiconductor switching devices
  crossref Mi Dong, J. Elmes, M. Peper, I. Batarseh 等 2009-11-20T19:40:38Z 置信度 0.70
• Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices
  crossref Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia 2019-01-16T12:14:00Z 置信度 0.70
• High Al-content AlGaN-based HEMTs
  crossref Albert G Baca, B A Klein, A M Armstrong, A A Allerman 等 2020-10-01T10:23:35Z 置信度 0.70
• Ultraviolet photodetectors based on wide bandgap oxide semiconductor films
  crossref Changqi Zhou, Qiu Ai, Xing Chen, Xiaohong Gao 等 2019-04-09T09:14:00Z 置信度 0.70
• Performance Assessment of a Wide-Bandgap-Semiconductor Dual-Active-Bridge Converter for Electrical Vehicles
  crossref Nestor Berbel, Gabriel J. Capella, Jordi Zaragoza, Jose Luis Romeral 2021-11-01T20:55:52Z 置信度 0.70
• Recent developments in GaN-based optical rapid switching semiconductor devices
  crossref Sudip K. Mazumder, Jacob Leach, Kevin Udwary, Kyma Technologies 等 2016-01-04T16:35:16Z 置信度 0.70
• Wide Bandgap Semiconductor Technologies for Next-Generation Power Electronics: Materials, Devices, and Application Perspectives
  Silicon-based power semiconductors are starting to show their limits as high-power, high-frequency electronics get more common in things like electric cars, renewable energy, data centers, and phone networks. Silicon just can't handle the high voltages, quick …
  crossref Dr. Aditi Sharma 2026-03-21T03:19:06Z 置信度 0.70
• Thermal and Efficiency Comparison of Wide-Bandgap Semiconductor Devices in EV Charger
  crossref Lanka Sridutt, Suyash Prakash, Saundarya Priyadarshini, Kanimozhi Gunasekaran 2025-07-08T11:25:14Z 置信度 0.70
• High-speed characterization of wide bandgap power devices
  crossref Kailun Zhong 2023-02-21T22:53:43Z 置信度 0.70
• Wide bandgap devices
  crossref 2009-12-18T13:18:25Z 置信度 0.70
• High-Voltage Nonlinear Transmission Lines Using Wide Bandgap Diodes
  crossref Rabeeh Majidi, Donhee Ham, Andrew Binder, Jason Neely 2025-08-26T12:24:57Z 置信度 0.70
• Extant ionic charge theory for bond orbital model based on the tight-binding method: A semi-empirical model applied to wide-bandgap II-VI and III-V semiconductors
  crossref A.S. Verma 2014-06-06T14:00:14Z 置信度 0.70
• The influence of excited states of deep dopants on majority-carrier concentration in a wide-bandgap semiconductor
  crossref Hideharu Matsuura 2002-07-26T20:12:30Z 置信度 0.70
• SiC/DLC Composite Layers Synthesised by the IPD Method
  crossref M. Elert, K. Zdunek 2009-04-06T20:10:16Z 置信度 0.70
• Table of Contents
  crossref 2025-01-16T18:34:15Z 置信度 0.70
• Micro- and Nanotechnology of Wide Bandgap Semiconductors
  crossref 2022-01-31T08:54:21Z 置信度 0.70
• Optoelectronic properties of ultra-wide-bandgap semiconductor NaYO2: A first-principles study
  Ultra-wide-bandgap semiconductors have tremendous potential to advance electronic devices, as device performance improves nonlinearly with increasing gap. In this work we employ density-functional theory with the accurate screened-hybrid functional to evaluate…
  crossref Nisar Muhammad, M. U. Muzaffar, Hui-min Li, Ze-jun Ding 2021-07-06T19:32:31Z 置信度 0.70
• On the Progress Made in GaN Vertical Device Technology
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• Sensing Performance Study of SiC, a Wide Bandgap Semiconductor Material Platform for Surface Plasmon Resonance Sensor
  The sensing properties of a surface plasmon resonance (SPR) based waveguide sensor on a wide bandgap semiconductor, silicon carbide (SiC), were studied. Compared to other waveguide sensors, the large bandgap energy of SiC material allows the sensor to operate …
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• Photonics for Processing Wide-Bandgap Semiconductors
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• Comparative Study of Power Semiconductor Devices Using Saber-Simulink Co-simulation
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