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• Aviation Electrification: The Next Frontier for Wide-Bandgap Semiconductor Devices
  crossref Cory Combs 2025-08-26T12:24:54Z 置信度 0.70
• Semiconductor Nanomaterials: Photocatalytic Characteristics of Wide Bandgap Semiconductor Nanomaterials
  crossref 2018-07-25T03:31:19Z 置信度 0.70
• Ferromagnetism in III-V Semiconductors
  crossref 2016-04-01T19:43:35Z 置信度 0.70
• Introduction
  crossref 2018-09-04T04:10:05Z 置信度 0.70
• Quantum Anomalous Semimetals
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report
  crossref Steven L. Bellinger 2018-10-20T08:17:01Z 置信度 0.70
• GaN Band Structure
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Magnetic materials
  crossref Daichi Azuma 2018-06-01T18:24:55Z 置信度 0.70
• Exchange Interaction in Semiconductors and Metals
  crossref 2016-04-01T15:43:35Z 置信度 0.70
• Introduction
  crossref B. Jayant Baliga 2018-10-26T18:46:05Z 置信度 0.70
• Magnetic Exchange Interaction in Topological Insulator
  crossref 2020-12-23T00:43:43Z 置信度 0.70
• Topology consideration
  crossref 2018-09-04T04:10:05Z 置信度 0.70
• Interconnection technologies
  crossref Katsuaki Suganuma 2018-06-01T18:25:10Z 置信度 0.70
• Performance evaluation of wide bandgap semiconductor technologies in automotive applications
  crossref Pourya Shamsi, Matthew McDonough, Babak Fahimi 2014-01-06T12:12:44Z 置信度 0.70
• Preface
  crossref B. Jayant Baliga 2018-10-26T18:48:34Z 置信度 0.70
• Efficient Automated Design and Optimization for Wide-Bandgap Semiconductor Power Modules
  crossref Pawel Piotr Kubulus 2024-11-15T12:39:33Z 置信度 0.70
• Synopsys
  crossref B. Jayant Baliga 2018-10-26T14:47:50Z 置信度 0.70
• Synthesis and characterisation of wide-bandgap semiconductor nanostructures towards opto-electronic applications
  crossref Umar Saleem 2019-09-10T22:47:11Z 置信度 0.70
• High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules
  crossref Paul Mumby-Croft, Daohui Li, Xiaoping Dai, Guoyou Liu 2018-09-13T05:59:39Z 置信度 0.70
• Wide Bandgap Semiconductor Laser Diodes: Technology and Characterization
  crossref Degang Zhao 2026-01-02T01:23:08Z 置信度 0.70
• Characteristics, Challenges, and Solutions to Electromagnetic Interference in Wide Bandgap Semiconductor Power Electronics Systems
  crossref Shuo Wang 2025-08-26T12:25:07Z 置信度 0.70
• Across-talk consideration
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• SiC material properties
  crossref Tsunenobu Kimoto 2018-10-26T18:46:19Z 置信度 0.70
• Wide Bandgap Semiconductor Opportunities in Power Electronics
  crossref Sujit Das, Laura Marlino, Kristina Armstrong 2018-01-10T04:00:27Z 置信度 0.70
• Novel wide bandgap semiconductor material based on ternary carbides - An investigation into Al4SiC4
  Nouveau matériau semi-conducteur à large bande interdite à base de carbures ternaires - Enquête sur Al4SiC4 Les matériaux semi-conducteurs à large bande interdite sont capables de résister aux environnements difficiles et de fonctionner dans une large plage de…
  crossref Simon Forster 2023-11-17T12:23:15Z 置信度 0.70
• Pulsed static characterization
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• Junction capacitance characterization
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• Nanostructures based on UWBG materials
  crossref 2019-06-21T15:38:07Z 置信度 0.70
• Tunnel Spin Filter in Rashba Quantum Structure
  crossref 2016-04-01T15:43:35Z 置信度 0.70
• Characterization and applications of wide bandgap semiconductor materials
  [EMBARGOED UNTIL 12/1/2023] Wide bandgap materials are potential candidates to revolutionize high-power electronics and optoelectronic devices due to their wide bandgap energy greater than 2 eV. Thus, there is a great necessity to research on these materials a…
  crossref Nanda Krishna Chaitanya Kasani 2023-02-23T10:09:31Z 置信度 0.70
• Ferromagnetism in III-V Semiconductors
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Recent advances in wide bandgap semiconductor-based gas sensors
  crossref F. Ren, S.J. Pearton 2013-09-21T01:07:18Z 置信度 0.70
• Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements
  crossref Caleb Roecker, Richard Schirato 2017-11-23T22:28:02Z 置信度 0.70
• Exchange Interaction in Semiconductors and Metals
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Technologies of a cooling device for power semiconductor
  crossref Yuchi Furukawa, Shinobu Yamauchi 2018-06-01T18:25:05Z 置信度 0.70
• Magnetic Exchange Interaction in Topological Insulator
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Fundamentals of dynamic characterization
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• Modeling and Free Energy Loss Analysis of Wide Bandgap Semiconductor Schottky Barrier Diodes
  This study evaluates and compares materials for Schottky barrier power diodes by free energy loss analysis (FELA) technique to reveal detailed material characteristics for power electronics applications. Wide band-gap (WBG) semiconductors of 4H-silicon carbide…
  crossref Takaya Sugiura 2025-05-28T10:57:41Z 置信度 0.70
• Wide-bandgap semiconductor-based memory devices for non-volatile data storage and neuromorphic computing
  crossref Tao Chen 2024-12-29T22:59:07Z 置信度 0.70
• Impact of Nitrogen Polymerization on the Properties of MgN2 Polymorphs: Ultrasoft Semiconductor versus Hard Wide-Bandgap Semiconductor
  crossref 2025-02-17T07:20:11Z 置信度 0.70
• Tunnel Spin Filter in Rashba Quantum Structure
  crossref Vladimir Litvinov 2024-02-13T03:54:16Z 置信度 0.70
• Layout design and parasitic management
  crossref 2018-09-04T04:10:05Z 置信度 0.70
• IEE Colloquium on Wide Bandgap Semiconductor Light Emitters (Ref. No.1996/233)
  crossref 2024-12-08T17:27:41Z 置信度 0.70
• Gate drive for dynamic characterization
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• Substrate
  crossref Kiyoshi Hirao, You Zhou, Hiroyuki Miyazaki 2018-06-01T14:25:08Z 置信度 0.70
• Preface
  crossref Meiyong Liao, Bo Shen, Zhanguo Wang 2019-06-21T15:38:07Z 置信度 0.70
• Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3
  crossref 2024-08-17T12:01:39Z 置信度 0.70
• Energy Efficient Wide Bandgap Devices
  crossref John Palmour 2007-03-03T01:23:25Z 置信度 0.70
• Impact of three-phase system
  crossref 2018-09-04T08:10:05Z 置信度 0.70
• A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics.
  europepmc 2026 置信度 0.80
• Machine-Learning-Enabled Discovery of Coexisting Phases through Nanospectroscopy of a Wide-Bandgap Semiconductor.
  Wide bandgap semiconductors with high room temperature mobilities are promising materials for high-power electronics. Stannate films provide wide bandgaps and optical transparency, although electron-phonon scattering can limit mobilities. In SrSnO 3 , epitaxia…
  pubmed Bragg A, Liu F, Yang Z, Kim D 等 2025 置信度 0.82
• Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga<sub>2</sub>O<sub>3</sub>.
  europepmc 2026 置信度 0.80
• Surface Modification of Wide Bandgap Semiconductor GaN Using Femtosecond Laser Induced Periodic Surface Structuring LIPSS
  Abstract The constant growth of power electronics field of technologies and applications demands ever growing research to find novel materials with characteristics to stand harsher work conditions and wider range of application, with lower costs and energy con…
  europepmc Mariam Shehadi, Docho Tsankov, Lyubomir Stoychev, Todor Petrov 2025 置信度 0.80
• Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery.
  Wide-bandgap semiconductor betavoltaic batteries have a promising prospect in Micro-Electro-Mechanical Systems for high power density and long working life, but their material selection is still controversial. Specifically, the silicon carbide (SiC) betavoltai…
  pubmed Zhang J, Lv K, Yin Y, Gao Y 等 2025 置信度 0.82
• One-dimensional wide-bandgap semiconductor β-Ga<sub>2</sub>O<sub>3</sub> nanorods for high-performance solar-blind ultraviolet photodetectors.
  europepmc 2026 置信度 0.80
• A first-principles study of Hoffmann-type ultra-wide bandgap semiconductor material.
  A novel Hoffmann-type metal-organic framework ultra-wide bandgap semiconductor material, {Ni(DMA) 2 [Ni(CN) 4 ]}(DMA denotes dimethylamine), has been predicted. The material has been named Ni-DMA-Ni, and its structure, stability, electronic, mechanical, optica…
  pubmed Liu J, Qiao Q, Zhang J, Ren Z 等 2025 置信度 0.82
• A review of ultra-wide-bandgap semiconductor radiation detector for high-energy particles and photons.
  Abstract Radiation detectors have gained significant attention due to their extensive applications in high-energy physics, medical diagnostics, aerospace, and nuclear radiation protection. Advances in relevant technologies have made the drawbacks of traditiona…
  pubmed Cheng W, Zhao F, Zhang T, He Y 等 2025 置信度 0.82
• Piezoelectricity in wide bandgap semiconductor 2D crystal GaN nanosheets.
  europepmc 2024 置信度 0.80
• Designing 2D Wide Bandgap Semiconductor B<sub>12</sub>X<sub>2</sub>H<sub>6</sub> (X=O, S) Based on Aromatic Icosahedral B<sub>12</sub>.
  Constructing two-dimensional (2D) novel materials using superatoms as building blocks is currently a highly promising research field. In this study, by employing an oxidation strategy and based on first-principles calculations, we successfully predicted two ty…
  pubmed Pei Gong, Jun-Hui Yuan, Gen-Ping Wu, Zhi-Hong Liu 等 2025 置信度 0.82
• Theoretical insights into the defect performance of the wide bandgap semiconductor BaS.
  europepmc 2023 置信度 0.80
• Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets.
  europepmc 2023 置信度 0.80
• First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor.
  europepmc 2022 置信度 0.80
• Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping.
  europepmc 2023 置信度 0.80
• Wide bandgap semiconductor nanomembranes as a long-term biointerface for flexible, implanted neuromodulator.
  europepmc 2022 置信度 0.80
• Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.
  Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for rep…
  europepmc Chao-Tsung Ma, Zhen-Huang Gu 2021 置信度 0.80
• Wide bandgap semiconductor-based novel nanohybrid for potential antibacterial activity: ultrafast spectroscopy and computational studies.
  europepmc 2020 置信度 0.80
• Ultra-wide bandgap semiconductor behavior of NaCaF3 fluoro-perovskite with external static isotropic pressure and its impact on optical properties: First-principles computation
  Abstract A comprehensive theoretical study to investigate the outcomes of externally applied static isotropic pressure (0 GPa - 50 GPa) on electronic, optical and structural properties of NaCaF 3 , using density functional theory (DFT) based CASTEP (Cambridge …
  europepmc Syed Sajid Ali Gillani, Nisar Fatima, M. Shakil, R. Kiran 等 2021 置信度 0.80
• Editorial for the Special Issue on Wide Bandgap Semiconductor Based Micro/Nano Devices.
  While conventional group IV or III-V based device technologies have reached their technical limitations (e [...]
  europepmc Jung-Hun Seo 2019 置信度 0.80
• Green and far-red-light induced electron injection from perylene bisimide to wide bandgap semiconductor nanocrystals with stepwise two-photon absorption process.
  europepmc 2021 置信度 0.80
• Antenna-enhanced high harmonic generation in a wide-bandgap semiconductor ZnO.
  europepmc 2018 置信度 0.80
• Ultraviolet luminescence enhancement of planar wide bandgap semiconductor film by a hybrid microsphere cavity/dual metallic nanoparticles sandwich structure.
  europepmc 2019 置信度 0.80
• BandGap Modulated Charge Gating of Semiconductor Coatings Stabilizes Zinc Metal Anodes.
  europepmc 2026 置信度 0.80
• Synergistic Interfacial Lewis-Base Interactions Enable Wide-Bandgap Semitransparent Perovskite Solar Cells with 4.19% Light-Utilization Efficiency and Enhanced Stability.
  europepmc 2026 置信度 0.80
• Multispectral UV Imaging on Capacitive CMOS Arrays Enabled by Solution-Processed Metal-Oxide Nanoparticles.
  europepmc 2026 置信度 0.80
• Deprotonation suppressing via competitive proton transfer control for efficient perovskite solar cells.
  europepmc 2026 置信度 0.80
• A Wide-Bandgap Molecular Ferroelectric Semiconductor with a Two-Step Wide-Temperature Second Harmonic Generation Response: [FMeQ]&lt;sub&gt;2&lt;/sub&gt;ZnI&lt;sub&gt;4&lt;/sub&gt;.
  europepmc 2026 置信度 0.80
• New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration.
  europepmc 2026 置信度 0.80
• Application of Machine Learning in Predicting the Properties of Two-Dimensional Semiconductor Materials.
  The rapid evolution of next-generation electronics urgently demands high-performance functional materials. Two-dimensional (2D) semiconductors, characterized by tunable bandgaps, magnetic properties, and excellent optical and electronic properties, hold signif…
  europepmc 2026 置信度 0.80
• Calibration-free and drift-robust AlGaN/GaN HEMT sensor arrays for intelligent pH detection.
  europepmc 2026 置信度 0.80
• Determination of the Thickness of Nanometer-Thick β‑Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Membranes from Optical Interference and Colorimetric Analysis for Applications in Next-Generation Semiconductors.
  europepmc 2026 置信度 0.80
• Molecularly Confined Domains Enable Halide-Stable Wide-Bandgap Perovskites.
  europepmc 2026 置信度 0.80
• Study of Single Crystal and X-Ray Detector Performance of Ti&lt;sup&gt;3+&lt;/sup&gt;: &lt;i&gt;β&lt;/i&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;.
  europepmc 2026 置信度 0.80
• Physics-Constrained Neural ODEs for MXene Bandgap Prediction with Conformal Uncertainty.
  europepmc 2026 置信度 0.80
• Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces.
  europepmc 2017 置信度 0.80
• Interfacial Reaction Competition in NiO/SiC for High-Performance UV Photodetection.
  europepmc 2026 置信度 0.80
• Exploration of some physical properties of new half-Heusler compounds BiXSr (X = Li and K) using first-principles calculations.
  europepmc 2026 置信度 0.80
• Green, Sustainable, and Multifunctional Biobased Hybrid Nanocomposites: Semiconducting Materials with Tunable Molecular Interfaces for Photocatalysis.
  europepmc 2026 置信度 0.80
• Post Annealing Temperature Effects on Electrical Characteristics of Sputtered Mo/β-Ga₂O₃ Vertical Schottky Barrier Diodes
  europepmc 2026 置信度 0.80
• Composition-Tuned p-/n-Type Conductivity and Annealing-Enhanced Properties of Spray-Pyrolyzed Ag–S-Sn Semiconductor Thin Films for Optoelectronic Applications
  europepmc 2026 置信度 0.80
• Three-Dimensional Micro-Scale Characterization of Silicon Carbide devices using the TPA-TCT method
  europepmc 2026 置信度 0.80
• Lead-free halide Rb&lt;sub&gt;2&lt;/sub&gt;SnCl&lt;sub&gt;6&lt;/sub&gt; double perovskite for ultraviolet, water-splitting, and sustainable energy harvesting technologies.
  europepmc 2026 置信度 0.80
• Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors.
  europepmc 2026 置信度 0.80
• Ordered Donor-Regulated ZnO Microwire for Ultralow-Power Artificial Synapses.
  Defect engineering via oxygen vacancy modulation has enabled a remarkable persistent photoconductivity effect in wide-bandgap semiconductors, spawning diverse artificial synapse architectures. However, stochastic defect distributions fundamentally limit device…
  pubmed Chen Z, Li L, Dong J, Zhang H 等 2026 置信度 0.82
• Artificial Intelligence-Guided Cosolvent Design for High-Performance Perovskite/Silicon Tandem Solar Cells.
  Realizing high-performance perovskite/silicon tandem solar cells requires precise control of wide-bandgap perovskite crystallization. Solvent engineering is the most direct lever for this task; yet, its intricate, multi-variable mechanisms defy intuition-drive…
  pubmed Liu L, Cai X, Farhadi B, Dong X 等 2026 置信度 0.82
• Terahertz-Field-Induced Dissociation of Frenkel Excitons in Organic Semiconductors.
  europepmc 2026 置信度 0.80
• 2D Semiconductor Hexagonal Boron Nitride Towards Broad Optoelectronic Applications.
  europepmc 2026 置信度 0.80
• Air-Processed and Water-Stable Perovskite Solar Cells Enabled by a Fishing-Net-Inspired Interfacial Network.
  Practical deployment of perovskite solar cells is hindered by fragile interfaces that accelerate degradation under moisture, heat, ion migration, and mechanical stress, particularly during ambient processing. Here, we introduce a fishing-net-inspired interfaci…
  pubmed Albab MF, Jahandar M, Kim AR, Heo J 等 2026 置信度 0.82
• Eu&lt;sub&gt;5&lt;/sub&gt;VO&lt;sub&gt;10&lt;/sub&gt;: Synthesis Methods and Characterization of Basic Physicochemical Properties.
  europepmc 2026 置信度 0.80
• Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(Al&lt;sub&gt;x&lt;/sub&gt;Ga&lt;sub&gt;1-x&lt;/sub&gt;)&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; on sapphire substrate via MOCVD.
  europepmc 2026 置信度 0.80
• Photonic-Electronic Dual-Passivated Ultrafast β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; SBUV Photodiode.
  europepmc 2026 置信度 0.80