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• Cu₂I₂Se₆: A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature.
  europepmc 2018 置信度 0.80
• RF-Sputtered β-Ga<sub>2</sub>O<sub>3</sub> Thin Films for Solar-Blind UV Detection: Progress, Challenges, and Future Perspectives.
  europepmc 2026 置信度 0.80
• A Lithium Calcium Borate Nonlinear Optical Crystal with Deep-UV Cutoff Edge and Moderate Second-Harmonic Generation Response.
  europepmc 2026 置信度 0.80
• Grain Boundary Enabled Diamond Memristor.
  Diamond has been recognized as the ultimate semiconductor due to its ultra-wide bandgap, exceptional carrier mobility, high breakdown voltage, and superior thermal conductivity. However, its application in memristors is significantly limited by challenges in m…
  pubmed Sun G, Li X, Huang W, Han Y 等 2026 置信度 0.82
• Dual-Band Ultraviolet Photodetection via a Single SiC/SiO<sub>2</sub>/Ga<sub>2</sub>O<sub>3</sub> Core-Shell-Satellite Nanowire Heterojunction.
  europepmc 2026 置信度 0.80
• Metal atom-induced electronic and magnetic properties in racemic metal-organic crystals.
  europepmc 2026 置信度 0.80
• A Layered Wide-Bandgap BiOF Gate Dielectric with a High Dielectric Constant.
  europepmc 2026 置信度 0.80
• Photo-activated charge transport and exciton dynamics in Cs₂NaInCl₆ double perovskite.
  europepmc 2026 置信度 0.80
• Revisiting Defect-Engineered M(III)-Doped ZnO Photocatalysts for Emerging Pollutant Photodegradation and Mineralization: A Mini-Review.
  europepmc 2026 置信度 0.80
• Optimizing g-C $_3$ N $_4$ -Based Acceptor Materials Through Density Functional Theory-Driven Bandgap Engineering for High-Performance Solar Cells.
  europepmc 2026 置信度 0.80
• Tailoring the many-body effects and phase configurations in monolayer MSi<sub>2</sub>X<sub>4</sub> (M = Mo, W; X = N, P, As, Sb) for wide-range bandgap engineering.
  europepmc 2026 置信度 0.80
• Performance Evolution and Research Progress of Silicon Carbide Sensors in Radiation Environments: A Review.
  Silicon carbide (SiC), a third-generation wide-bandgap semiconductor, demonstrates prominent application advantages for extreme-environment sensing scenarios including deep-space exploration, nuclear reactor monitoring, and fusion device diagnosis, which benef…
  pubmed Liu Y, Deng Y, Zhang Q, Li H 等 2026 置信度 0.82
• Current Progress of Excellent Photodetectors Based on Novel Semiconductor Nanomaterials.
  europepmc 2026 置信度 0.80
• Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering.
  europepmc 2026 置信度 0.80
• Influence of Zinc Doping on the Morphological, Structural, and Optical Characteristics of Copper Oxide Thin Films Prepared Through Ultrasound Spray Pyrolysis.
  europepmc 2026 置信度 0.80
• High-κ KBe<sub>2</sub>BO<sub>3</sub>F<sub>2</sub> dielectric material with wide bandgap for two-dimensional electronics.
  europepmc 2026 置信度 0.80
• Physical mechanism of the work function modulated fin-channel<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>based diode with a low turn-on voltage.
  europepmc 2026 置信度 0.80
• Unveiling the Potential of Reduced Graphene Oxide in Self-Powered Photodetectors.
  europepmc 2026 置信度 0.80
• Multiemission Ln-MOF Fluorescence Sensing Array for Identification of Antibiotic Residues in Environmental and Food Samples.
  The environmental residues and drug resistance resulting from antibiotic abuse urgently call for the development of efficient multicomponent detection technologies. Therefore, single-lanthanide metal-organic frameworks [Ln(BDPO)(H2O)4](H2O) (DMF): Ln = Eu, Tb,…
  pubmed Wang S, Sun B, Wang J, Hua J 等 2026 置信度 0.82
• A novel electrochemical exfoliation route to tailor the graphene bandgap through silicon incorporation: semi-metallic to semiconducting transition.
  europepmc 2026 置信度 0.80
• Wide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
  This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based systematic rev…
  europepmc Giuseppe Galioto, Gianpaolo Vitale, Antonino Sferlazza, Giuseppe Lullo 等 2026 置信度 0.80
• Enhancing Wide-Bandgap Triple-Halide Perovskites for Tandem Solar Cells by 0.5% Formate and Zn(II) Doping.
  europepmc 2026 置信度 0.80
• Quantum Confinement Effect in a Heteromorphic PbS/SnS<sub>2</sub> Superlattice Grown by Atomic Layer Deposition.
  europepmc 2026 置信度 0.80
• Harnessing scanning probe lithography for integrated photonics with anisotropic materials.
  europepmc 2026 置信度 0.80
• Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.
  Abstract Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device …
  europepmc PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami 2015 置信度 0.80
• First principles calculations of electronic structure and optical properties of high-throughput multiple-element-doped In<sub>2</sub>O<sub>3</sub>by HSE06 method.
  europepmc 2026 置信度 0.80
• High-Entropy Perovskite Oxide Enables Visible-Light-Driven Overall Water Splitting via "inner-Z-Scheme" Pathway.
  europepmc 2026 置信度 0.80
• AI-optimized pulsed electric field for low-carbon urban water disinfection.
  europepmc 2026 置信度 0.80
• A Biomimetic Fisheye for High-Accuracy Underwater Recognition Enabled by Oxide Semiconductor Retina.
  europepmc 2026 置信度 0.80
• Solution-Processed High-k HfO<sub>2</sub> Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness.
  europepmc 2026 置信度 0.80
• Advances in Silicon-Based UV Light Detection.
  Silicon (Si), the cornerstone semiconductor in the micro-electronics industry, can provide a cost-efficient platform with mature technologies for photodetection in visible and near-infrared regions. However, its intrinsic properties, such as a narrow bandgap a…
  pubmed Kamal A, Hong S, Ju H 2025 置信度 0.82
• Stress-to-Light Conversion in an Earth-Abundant Oxide Semiconductor.
  europepmc 2026 置信度 0.80
• Synergistic Pyro-Phototronics and Structural Anisotropy in CsAg<sub>2</sub>I<sub>3</sub>/GaN Heterostructures for High-Performance Polarization-Sensitive UV Photodetectors.
  europepmc 2026 置信度 0.80
• From anti-solvent synthesis to polaron-driven transport: exploring the promise of lead-free Rb<sub>2</sub>SnCl<sub>6</sub> nanocrystals.
  europepmc 2026 置信度 0.80
• Wide-bandgap semiconductor ultraviolet photodetectors
  Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si ph…
  openalex E. Monroy, F Omn s, F. Calle, E Monroy 等 2003-03-04 置信度 0.72 PhotodetectorUltravioletOptoelectronicsSemiconductorMaterials science
• High-temperature electronics - a role for wide bandgap semiconductors?
  The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will…
  openalex Philip G. Neudeck, Robert S. Okojie, Liang-Yü Chen 2002-06-01 置信度 0.72 Materials scienceSemiconductorSiliconSilicon bandgap temperature sensorEngineering physics
• Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
  openalex Jeff B. Casady, Wayne Johnson 1996-10-01 置信度 0.72 Silicon carbideMaterials scienceSilicon bandgap temperature sensorOptoelectronicsSemiconductor
• Low-dimensional wide-bandgap semiconductors for UV photodetectors
  openalex Ziqing Li, Tingting Yan, Xiaosheng Fang 2023-08-18 置信度 0.72 PhotodetectorElectronicsSemiconductorOptoelectronicsMaterials science
• An assessment of wide bandgap semiconductors for power devices
  An advantage for some wide bandgap materials, that is often overlooked, is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for packaging technology. It is shown that the optimal choice for uni-polar devices is clearly G…
  openalex J.L. Hudgins, G. Simin, Enrico Santi, M.A. Khan 2003-05-01 置信度 0.72 Materials scienceOptoelectronicsBand gapWide-bandgap semiconductorSemiconductor
• Wide-bandgap semiconductor materials: For their full bloom
  Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices ha…
  openalex Shizυo Fujita, Shizuo Fujita 2015-02-04 置信度 0.72 SemiconductorBand gapLight-emitting diodeMaterials scienceWide-bandgap semiconductor
• Fluorographene: A Wide Bandgap Semiconductor with Ultraviolet Luminescence
  The manipulation of the bandgap of graphene by various means has stirred great interest for potential applications. Here we show that treatment of graphene with xenon difluoride produces a partially fluorinated graphene (fluorographene) with covalent C-F bondi…
  europepmc Ki‐Joon Jeon, Zonghoon Lee, Elad Pollak, Luca Moreschini 等 2011 置信度 0.80 GrapheneMaterials sciencePhotoluminescenceBand gapSpectroscopy
• Wide bandgap semiconductor materials and devices
  Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these "poles and zeros" lead not only to sup…
  openalex Max N. Yoder, M.N. Yoder 1996-01-01 置信度 0.72 SemiconductorWide-bandgap semiconductorBand gapSemiconductor deviceMaterials science
• Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor
  We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding $10\text{ }\text{G}…
  openalex Shi‐Bo Cheng, Ke Zou, Fujio Okino, Humberto R. Gutiérrez 等 2010-05-25 置信度 0.72 GrapheneSemiconductorBand gapMaterials scienceCondensed matter physics
• Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices
  openalex Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu 2007-03-01 置信度 0.72 SemiconductorMaterials scienceBand gapPhotonicsOptoelectronics
• Recent advances in wide bandgap semiconductor biological and gas sensors
  openalex S. J. Pearton, F. Ren, Yu‐Lin Wang, B. H. Chu 等 2009-09-04 置信度 0.72 Materials scienceSemiconductorNanotechnologyBand gapOptoelectronics
• Doping asymmetry in wide‐bandgap semiconductors: Origins and solutions
  Abstract Wide‐bandgap (WBG) semiconductors are essential materials for making short‐wavelength and transparent optoelectronic devices. However, a serious obstacle to realizing WBG semiconductor‐based devices is their common doping asymmetry problem, i.e., a WB…
  openalex Yanfa Yan, Su‐Huai Wei 2008-02-01 置信度 0.72 DopingSemiconductorAsymmetryMaterials scienceWide-bandgap semiconductor
• Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications
  Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handl…
  openalex Burak Ozpineci, B. Ozpineci 2004-01-02 置信度 0.72 SemiconductorSilicon carbideWide-bandgap semiconductorMaterials scienceGallium nitride
• A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices
  Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and high power density to power converters due to their excellent performance. However, their low parasitic capacitance and fast switching speed also make them more susceptible…
  openalex Jian Chen, Xiong Du, Quanming Luo, Xinyue Zhang 等 2020-05-19 置信度 0.72 TransistorCascodeGallium nitrideMaterials scienceConverters
• Petahertz optical drive with wide-bandgap semiconductor
  openalex Hiroki Mashiko, Katsuya Oguri, Tomohiko Yamaguchi, Akira Suda 等 2016-04-11 置信度 0.72 PhysicsSemiconductorAttosecondOptoelectronicsGallium nitride
• Hot electron microwave conductivity of wide bandgap semiconductors
  openalex P. Das, D. K. Ferry 1976-10-01 置信度 0.72 Condensed matter physicsSemiconductorMicrowaveConductivityDielectric
• Quantum-Sized PbS, CdS, Ag₂S, Sb₂S₃, and Bi₂S₃ Particles as Sensitizers for Various Nanoporous Wide-Bandgap Semiconductors
  ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTQuantum-Sized PbS, CdS, Ag2S, Sb2S3, and Bi2S3 Particles as Sensitizers for Various Nanoporous Wide-Bandgap SemiconductorsR. VogelR. VogelMore by R. Vogel, P. HoyerP. HoyerMore by P. Hoyer, and H. WellerH. WellerMore…
  openalex R. Vogel, Patrick Hoyer, Horst Weller 1994-03-01 置信度 0.72 NanoporousAltmetricsCitationSocial mediaIcon
• Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors
  The wide bandgap semiconductors SiC and GaN are already commercialized as power devices that are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to perma…
  openalex S. J. Pearton, Assel Aitkaliyeva, Minghan Xian, F. Ren 等 2021-04-27 置信度 0.72 Materials scienceOptoelectronicsRadiation hardeningTransistorSemiconductor
• Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects
  Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible …
  europepmc Fa Cao, Ying Liu, Mei Liu, Zeyao Han 等 2024 置信度 0.80 PhotodetectorUltravioletMaterials scienceOptoelectronicsSemiconductor
• Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges
  The expansion of the electric vehicle market is driving the request for efficient and reliable power electronic systems for electric energy conversion and processing. The efficiency, size, and cost of a power system is strongly related to the performance of po…
  openalex Giuseppe Iannaccone, Christian Sbrana, Iacopo Morelli, Sebastiano Strangio 2021-01-01 置信度 0.72 Silicon carbideGallium nitrideWide-bandgap semiconductorPower electronicsSemiconductor
• Wide bandgap semiconductor-based integrated circuits
  Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to traditional semiconductors such as silicon, rendering them very promising for applications in the fields of electronics and optoelectronics. Prominent examples of semiconductors i…
  openalex Saravanan Yuvaraja, Vishal Khandelwal, Xiao Tang, Xiaohang Li 2023-10-14 置信度 0.72 Materials scienceOptoelectronicsSemiconductorTransistorElectronic circuit
• Wide bandgap semiconductor materials and devices
  The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities…
  openalex Joel B. Varley, Bo Shen, Masataka Higashiwaki 2022-06-17 置信度 0.72 Wide-bandgap semiconductorBand gapSemiconductorMaterials scienceOptoelectronics
• Diamond, silicon carbide and related wide bandgap semiconductors
  The exact definition of wide bandgap semiconductors versus conventional semiconductors is rather ambiguous. A variety of different semiconductors have been discussed in the present symposium, but the major emphasis, of course dictated by the participant respon…
  openalex Jeffrey T. Glass, R. Messier, Naoji Fujimori 1990-01-01 置信度 0.72 DiamondSilicon carbideSemiconductorEngineering physicsNanotechnology
• Wide bandgap semiconductor transistors for microwave power amplifiers
  Explores the RF power performance of microwave amplifiers fabricated from wide bandgap semiconductor transistors and demonstrates that microwave power amplifiers fabricated from 4H-SiC and AlGaN/GaN transistors offer superior RF power performance, particularly…
  openalex R.J. Trew 2000-03-01 置信度 0.72 AmplifierMaterials scienceRF power amplifierTransistorMicrowave
• Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview
  openalex Mariana Amorim Fraga, Humber Furlan, Rodrigo Sávio Pessoa, M. Massi 2013-12-13 置信度 0.72 Materials sciencePiezoresistive effectWide-bandgap semiconductorMicroelectromechanical systemsSilicon carbide
• Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
  Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displa…
  openalex Jueli Shi, Jiaye Zhang, Yang Lu, Mei Qu 等 2021-04-01 置信度 0.72 Materials scienceSemiconductorNanotechnologyThin-film transistorOptoelectronics
• Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
  In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift–diffusion model …
  openalex Aritra Acharyya, J. P. Banerjee 2012-11-15 置信度 0.72 Terahertz radiationOptoelectronicsMaterials scienceWurtzite crystal structureSemiconductor
• Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
  This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show t…
  openalex T. Paul Chow, R. Tyagi 1994-01-01 置信度 0.72 Band gapMaterials scienceSemiconductorWide-bandgap semiconductorCompound semiconductor
• Recent developments of wide-bandgap semiconductor based UV sensors
  openalex A. BenMoussa, A. Soltani, U. Schühle, Ken Haenen 等 2008-11-28 置信度 0.72 PhotodetectorOptoelectronicsMaterials scienceDiamondResponsivity
• SiC and GaN wide bandgap semiconductor materials and devices
  openalex Albert A. Burk, Michael O’Loughlin, R.R. Siergiej, Anant Agarwal 等 1999-08-01 置信度 0.72 Materials scienceWide-bandgap semiconductorSemiconductorOptoelectronicsBand gap
• The defect challenge of wide-bandgap semiconductors for photovoltaics and beyond
  The optoelectronic performance of wide-bandgap semiconductors often cannot compete with that of their defect-tolerant small-bandgap counterpart. Here, the authors outline three main challenges to overcome for mitigating the impact of defects in wide-bandg…
  openalex Alex M. Ganose, David O. Scanlon, Aron Walsh, Robert L. Z. Hoye 2022-08-11 置信度 0.72 Band gapSemiconductorPhotovoltaicsWide-bandgap semiconductorMaterials science
• Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors
  Wide bandgap semiconductor ZnO, GaN and InN nanowires have displayed the ability to detect many types of gases and biological and chemical species of interest. In this review, we give some recent examples of using these nanowires for applications in pH sensing…
  openalex S. J. Pearton, F. Ren, Stephen J. Pearton, Fan Ren 2013-01-01 置信度 0.72 NanosensorNanoelectronicsMaterials scienceNanowireNanotechnology
• Development and Applications of Wide Bandgap Semiconductors
  openalex Akihiko Yoshikawa, Hiroyuki Matsunami, Yasushi Nanishi 2007-01-01 置信度 0.72 SemiconductorMaterials scienceOptoelectronicsBand gapEngineering physics
• Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
  openalex Asier Matallana, Edorta Ibarra, I. López, Jon Andreu 等 2019-08-02 置信度 0.72 ElectronicsPower electronicsSemiconductorBand gapEngineering physics
• Wide bandgap semiconductor materials for high temperature electronics
  openalex Paul R. Chalker 1999-04-01 置信度 0.72 SemiconductorMaterials scienceBand gapOptoelectronicsWide-bandgap semiconductor
• Advances in wide bandgap materials for semiconductor spintronics
  openalex S. J. Pearton, C. R. Abernathy, D. P. Norton, A. F. Hebard 等 2003-02-01 置信度 0.72 SpintronicsMagnetic semiconductorMaterials scienceSemiconductorOptoelectronics
• Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors
  Wide bandgap semiconductors enable high voltage (10 kV and more) switches. As a consequence, new packaging solutions are required to prepare the ground for such devices. The metallized ceramic substrate is a well-known and established technology for voltages u…
  openalex Hugo Reynes, Cyril Buttay, Hervé Morel, Herve Morel 2017-10-01 置信度 0.72 Materials scienceCeramicSubstrate (aquarium)OptoelectronicsSemiconductor
• Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
  openalex Yuhao Zhang, Dong Dong, Qiang Li, Richard Zhang 等 2025-01-21 置信度 0.72 SemiconductorBand gapPower electronicsMaterials scienceWide-bandgap semiconductor
• Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
  openalex Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson 2009-10-05 置信度 0.72 Materials scienceDiamondOptoelectronicsSemiconductorPower semiconductor device
• Fundamental Limitations of Wide-Bandgap Semiconductors for Light-Emitting Diodes
  Fundamental limitations of wide-bandgap semiconductor devices are caused by systematic trends of the electron and hole effective mass, dopant ionization energy, and carrier drift mobility as the semiconductor’s bandgap energy increases. We show that when trans…
  openalex Jun Hyuk Park, Dong Yeong Kim, E. Fred Schubert, Jaehee Cho 等 2018-02-13 置信度 0.72 OptoelectronicsBand gapLight-emitting diodeMaterials scienceSemiconductor
• Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
  Wide-bandgap semiconductors such as GaN∕AlGaN and ZnO∕MgZnO quantum wells are promising for improving the spectral reach and high-temperature performance of terahertz quantum cascade lasers, due to their characteristically large optical phonon energies. Here, …
  openalex E. Bellotti, Kristina Driscoll, T. D. Moustakas, Roberto Paiella 2009-06-01 置信度 0.72 Terahertz radiationOptoelectronicsQuantum wellCascadeMaterials science
• Hexagonal boron nitride is an indirect bandgap semiconductor
  openalex Guillaume Cassabois, Pierre Valvin, Bernard Gil 2016-01-25 置信度 0.72 Band gapMaterials scienceSemiconductorExcitonWide-bandgap semiconductor
• Dopants and defects in ultra-wide bandgap semiconductors
  openalex John L. Lyons, Darshana Wickramaratne, Anderson Janotti 2024-04-08 置信度 0.72 SemiconductorMaterials scienceBand gapDiamondDopant
• Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
  Atom probe tomography allows for three-dimensional reconstruction of the elemental distribution in materials at the nanoscale. However, the measurement of the chemical composition of compound semiconductors may exhibit strong biases depending on the experiment…
  openalex Lorenzo Mancini, Nooshin Amirifar, Deodatta Shinde, Ivan Blum 等 2014-09-19 置信度 0.72 Atom probeMaterials scienceTernary operationSemiconductorElectric field
• Sensitive mid-infrared detection in wide-bandgap semiconductors using extreme non-degenerate two-photon absorption
  openalex Dmitry A. Fishman, Claudiu M. Cirloganu, Scott Webster, Lázaro A. Padilha 等 2011-08-05 置信度 0.72 Absorption (acoustics)SemiconductorBand gapOptoelectronicsPhoton
• Raman studies on spintronics materials based on wide bandgap semiconductors
  Structural properties of GaN and ZnO layers doped with magnetic impurities were investigated by Raman scattering. Long-range lattice ordering and local atomic arrangement around magnetic impurities were analysed, and their solubility limit was considered. For …
  openalex Hisatomo Harima 2004-11-20 置信度 0.72 SpintronicsImpurityRaman scatteringMaterials scienceRaman spectroscopy
• Wide bandgap semiconductor detectors for harsh radiation environments
  openalex James Grant, W. R. Cunningham, A. Blue, V. OʼShea 等 2005-04-09 置信度 0.72 Materials scienceOptoelectronicsSilicon carbideGallium nitrideIrradiation
• Wide Bandgap Semiconductors for Power Electronics
  Wide bandgap semiconductors,such as silicon carbide(SiC) and gallium nitride(GaN),are considered to be excellent candidates for high power,high frequency and high temperature applications in the commercial and military power distribution and conversion systems…
  openalex 2021-10-29 置信度 0.72 SemiconductorPower electronicsBand gapElectronicsEngineering physics
• Wide bandgap semiconductor power devices for energy efficient systems
  We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range…
  openalex T. Paul Chow 2015-11-01 置信度 0.72 Power semiconductor deviceTransistorPower (physics)VoltageElectrical engineering
• Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
  Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion. Examples of these include metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-g…
  openalex Omar Sarwar Chaudhary, Mouloud Denaï, Shady S. Refaat, Georgios Pissanidis 2023-09-18 置信度 0.72 Power semiconductor devicePower electronicsPower moduleElectrical engineeringMaterials science
• Physics and applications of wide bandgap semiconductors
  Wide bandgap semiconductors are electronic materials in which the energy of the band-to-band electronic transitions exceeds approximately 2 eV. These materials have different kinds of chemical bonds and of crystal lattice structures, but the electronic and opt…
  openalex В.С. Вавилов 1994-03-31 置信度 0.72 SemiconductorBand gapWide-bandgap semiconductorMaterials scienceSilicon carbide
• Ultraviolet photodetectors based on wide bandgap semiconductor: a review
  openalex Jijun Ding, Pengfei Zhao, Haixia Chen, Haiwei Fu 2024-04-29 置信度 0.72 Materials scienceOptoelectronicsUltravioletBand gapPhotodetector
• Wide bandgap semiconductor devices and MMICs for RF power applications
  High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide bandwidth MMICs have also been demonstrated with SiC MESFETs, yielding 37 W at 3.5 GHz. Even higher power densities have been obtained…
  openalex John W. Palmour, S.T. Sheppard, R.P. Smith, Scott T. Allen 等 2002-11-13 置信度 0.72 Materials scienceMonolithic microwave integrated circuitAmplifierOptoelectronicsWide-bandgap semiconductor
• Control of Spin Defects in Wide-Bandgap Semiconductors for Quantum Technologies
  Deep-level defects are usually considered undesirable in semiconductors as they typically interfere with the performance of present-day electronic and optoelectronic devices. However, the electronic spin states of certain atomic-scale defects have recently bee…
  openalex F. Joseph Heremans, Christopher G. Yale, D. D. Awschalom 2016-05-24 置信度 0.72 Quantum sensorDynamical decouplingQuantum technologyQuantum entanglementQuantum computer
• (Ultra)wide bandgap semiconductor heterostructures for electronics cooling
  The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance…
  openalex Zhe Cheng, Zifeng Huang, Jinchi Sun, Jia Wang 等 2024-11-25 置信度 0.72 SemiconductorHeterojunctionMaterials scienceOptoelectronicsBand gap
• Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors
  Abstract The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post‐processing after designing, making their structures …
  openalex Zahir Muhammad, Yan Wang, Yue Zhang, Pierre Vallobra 等 2022-09-30 置信度 0.72 ElectronicsBand gapMaterials scienceRadiation hardeningSemiconductor
• Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
  Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as ac…
  openalex Elvira Fortunato, Pedro Barquinha, Rodrigo Martins 2012-05-10 置信度 0.72 Thin-film transistorMaterials scienceElectronicsNanotechnologyOxide thin-film transistor
• Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications
  Currently, the demand by new application scenarios of increasing operating device temperatures in power systems is requiring new die-attach materials with higher melting points and suitable thermomechanical properties. This makes the die-attach material select…
  openalex Luis A. Navarro, X. Perpiñà, Philippe Godignon, J. Montserrat 等 2013-08-23 置信度 0.72 Die (integrated circuit)Materials scienceSinteringTemperature cyclingComposite material
• Photosensitization of wide bandgap semiconductors with antenna molecules
  Polynuclear metal complexes, supporting efficient intramolecular energy transfer processes, can be used to increase the light harvesting efficiency of sensitized wide bandgap semiconductors. Experimental studies are discussed to emphasize: (i) how structural c…
  openalex Carlo Alberto Bignozzi, Roberto Argazzi, Jon R. Schoonover, Gerald J. Meyer 等 1995-01-01 置信度 0.72 SemiconductorAntenna effectBand gapAntenna (radio)Intramolecular force
• Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility
  18 monolayer metals have superior oxidation resistance, wide bandgap, high carrier mobility and notable absorption in the ultraviolet region.
  openalex Yu Guo, Liang Ma, Keke Mao, Ming‐Gang Ju 等 2018-12-20 置信度 0.72 MonolayerMaterials scienceBand gapSemiconductorMetal
• Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
  Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit…
  openalex J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis, Debdeep Jena 等 2017-12-04 置信度 0.72 SemiconductorMaterials scienceBand gapOptoelectronicsEngineering physics
• A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN
  openalex Keran Jiang, Peilei Zhang, Shijie Song, Tianzhu Sun 等 2024-05-27 置信度 0.72 Materials scienceOptoelectronicsSemiconductorWide-bandgap semiconductorSurface micromachining
• Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe
  openalex Ichiro Yonenaga 2001-12-01 置信度 0.72 Materials scienceWide-bandgap semiconductorDislocationAtmospheric temperature rangeIndentation
• Analysis and control of a phase-shift parallel switch cell.
  europepmc 2026 置信度 0.80
• Reconfigurable Adaptive Synapse and Logic Device by Ambipolar Ferroelectric Semiconductor.
  europepmc 2026 置信度 0.80
• Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling.
  europepmc 2026 置信度 0.80