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• Advances in Gel-Based Electrolyte-Gated Flexible Visual Synapses for Neuromorphic Vision Systems.
  europepmc 2026 置信度 0.80
• Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.
  europepmc 2026 置信度 0.80
• Anti-inflammatory and tissue-healing effects of semiconductor-embedded fabrics: current evidence and future perspectives.
  Wearable fabrics embedding crystalline semiconductor materials (e.g. germanium, silicon) are promising biomedical devices for their therapeutic potential in musculoskeletal disorders, including osteoarthritis, tendinopathies, and chronic pain, and for supporti…
  pubmed Lamparelli EP, Batti S, Orlanno C, Montella F 等 2026 置信度 0.82
• Al-rich AlGaN multichannel transistors with degenerate semiconductor electrodes
  europepmc 2026 置信度 0.80
• Optical Access to the Electronic Nature of Device-Relevant Dislocations in High-Purity Semi-Insulating SiC.
  europepmc 2026 置信度 0.80
• In Situ Cold-Junction Compensation Strategy for Semiconductor Thin-Film Thermocouples Based on a Pt Thin-Film Resistance Temperature Detector.
  Semiconductor thin-film thermocouples offer significant advantages for in situ temperature monitoring in advanced engineering equipment. However, the absence of a reliable cold-junction temperature compensation methodology has constrained their practical deplo…
  pubmed Li Y, Tang L, Su Z, Xu Y 等 2026 置信度 0.82
• Semiconductor room-temperature maser.
  We report the first demonstration of a semiconductor maser based on silicon vacancies (V Si ) in 4H-silicon carbide (SiC). Using an active feedback loop, we enhance the resonator's quality factor, enabling continuous-wave maser operation even above room temper…
  pubmed Gottscholl A, Wagenhöfer M, Baianov V, Eisermann E 等 2026 置信度 0.82
• Light polarization-based electro-optic memory.
  europepmc 2026 置信度 0.80
• A light-driven multi-state heterojunction transistor for optoelectronic ternary logic circuits.
  europepmc 2026 置信度 0.80
• A First-Principles Study of Hydrostatic Pressure-Driven Semiconductor-to-Semimetal Transitions, Dynamic Stability, Thermodynamic and Optical Properties in phases (α and γ) of 2D SnTe Monolayer and Bilayer structure
  europepmc 2026 置信度 0.80
• Advances in laser-based lithography and processing of semiconductors and insulators.
  europepmc 2026 置信度 0.80
• SPM system for semiconductor device applications.
  europepmc 2014 置信度 0.80
• Flexible Iontronic Pressure Sensor Based on Ammonium Bicarbonate In-Situ Pore-Forming Porous Ionic Gel.
  To address prevalent industrial challenges, including the high cost of fabricating microstructures via photolithography and 3D printing, impurity residues easily generated by conventional physical/chemical pore-forming techniques, and the limited sensitivity o…
  pubmed Li Z, Qin L, Huang X, Pei P 2026 置信度 0.82
• Starvation effect enables computing and memory functions in semiconductor-free fibres.
  europepmc 2026 置信度 0.80
• A machine-learning virtual source model for nanoscale transistors.
  Neural networks (NNs) are powerful tools for modeling transistor characteristics from data, yet purely data-driven models are data-hungry, can yield unphysical results, and often fail to generalize. We present an integrated NN-virtual source (NN-VS) model that…
  europepmc 2026 置信度 0.80
• Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces.
  europepmc 2026 置信度 0.80
• Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors.
  europepmc 2026 置信度 0.80
• High-performance broadband, low-cost metal-semiconductor-metal π-SnS/Si photodetector.
  The UV-IR broadband photodetectors have attracted considerable attention for applications in telecommunications, environmental dust detection, and thermal imaging. Constructing broadband photodetectors based on multi-material heterostructures with multiple act…
  pubmed Mahdi MS, Al-Arab HS, Mahmood SS, Abbas KK 等 2026 置信度 0.82
• Quantum-modified photo-thermoelastic wave propagation in semiconductors with temperature-dependent thermal conductivity.
  europepmc 2026 置信度 0.80
• Ultra-Low-Bubble-Density Quartz Glass Enabled by Stepwise Calcination of High-Purity Synthetic Quartz Powder.
  High-purity synthetic quartz powders are widely used for quartz crucibles and quartzware in semiconductor processes. However, sol-gel-derived synthetic quartz powders contain hydrogen bonds on pore interiors and surfaces, inducing bubble formation during quart…
  pubmed Lee WG, Lee CJ, Choi JH, Kim JH 等 2026 置信度 0.82
• Advances in semiconductor materials and device architectures for biomedical systems: a mini review.
  europepmc 2026 置信度 0.80
• Multidimensional Interface Structure Design for High-Efficiency Optically Controlled Semiconductor Devices: A Case Study on Memristive Synapses.
  europepmc 2026 置信度 0.80
• Array of Cointegrated Transistor-Based Artificial Neurons and Synapses for Neuromorphic Computing.
  Neuromorphic computing seeks to replicate the computational efficiency and parallelism of the human brain by emulating its neural architecture. In this work, we present the Array of Cointegrated Transistor-Based Artificial Neurons and Synapses (ACTANS), a simp…
  pubmed Lee SW, Seo S, Jeong H, Han JK 等 2026 置信度 0.82
• Hydrogen-Stabilized Self-Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer-Based Keyword Spotting.
  This study proposes a strategy to simultaneously improve conductance uniformity and data retention characteristics by introducing the incremental step pulse with verify algorithm (ISPVA) technique and hydrogen (H 2 ) annealing into a non-filamentary TiN/Ti/HfO…
  pubmed Lee S, Ju S, Lee WJ, Kang M 等 2026 置信度 0.82
• Switchable Ultralong Chiral Signal Transmission and Gate Tunability in Organic Chiral Semiconductor.
  europepmc 2026 置信度 0.80
• Quaternary PdPS<sub>0.55</sub>Se<sub>0.45</sub> for SBUV-to-SWIR Broadband Photodetection and Tri-Band In-Sensor Processing.
  Post-fire remote sensing for accurate damage assessment critically relies on multi-band perception spanning from solar-blind ultraviolet (SBUV) to short-wave infrared (SWIR) and effective in-sensor image pre-processing. However, most vdW photodetectors still o…
  pubmed Xu S, Liu S, Xin K, Yu Y 等 2026 置信度 0.82
• Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors.
  europepmc 2026 置信度 0.80
• Ultralow Energy Optoelectronic Synapse Using Halide Perovskite/Organic Semiconductor Heterostructure for Neuromorphic Computing, Optical Logic and Wireless Communication.
  With the advancement of artificial intelligence, the emulation of biological neural processes through neuromorphic computing has gained significant attention. Artificial optoelectronic synapses have emerged as promising components for neuromorphic computing du…
  europepmc 2026 置信度 0.80
• A ZnO nanoparticle UV detector on a fabric substrate pretreated with Prussian blue with high anti-twist performance.
  europepmc 2026 置信度 0.80
• Conformal TiO<sub>2</sub> nanolayers on electrospun PVDF fibers <i>via</i> spatial atomic layer deposition for enhanced triboelectric charge generation.
  europepmc 2026 置信度 0.80
• Thiol-Amine Processed PbS Thin Films for Enhanced Near-Infrared Photodetection.
  europepmc 2026 置信度 0.80
• Tuning interfacial thermal conductance by combining single vacancy and atomic mass variation in crystalline and amorphous interface.
  Interfacial thermal resistance critically limits heat dissipation in nanoscale semiconductor devices. Although varying atomic mass and introducing vacancy defects in interface have each been shown to enhance interfacial thermal conductance (ITC), their combine…
  pubmed Xiong Z, Yin Y, Latour B, Yang L 2026 置信度 0.82
• Biofunctionalized polymer semiconductors toward soft and stretchable transistor-based biosensors.
  europepmc 2026 置信度 0.80
• Fundamental and technical advances in bulk photovoltaics of 2D van der Waals materials.
  europepmc 2026 置信度 0.80
• High-efficiency ultra-thin CIGSe solar cells: defect engineering and back-surface field design.
  europepmc 2026 置信度 0.80
• Photo-assisted rechargeable supercapacitors and applications.
  Photo-assisted rechargeable supercapacitors (PSCs) are a new category of hybrid energy-storage devices that combine solar energy harvesting and electrochemical charge storage within a single device. The review presents the latest developments in PSCs, includin…
  europepmc 2026 置信度 0.80
• Tunneling-Barrier-Free Ohmic Contacts at 2D Electride/Semiconductor Interfaces.
  europepmc 2026 置信度 0.80
• Defect-mediated generation-recombination dynamics governing conductance response in floating-body transistors.
  As CMOS technologies evolve toward ultra-thin floating-body architectures, defect-mediated carrier dynamics increasingly dominate device behavior, challenging conventional linear interpretations of electrical response in nanoscale transistors. In this work, we…
  pubmed Kwak B, Han C, You H, Hong W 等 2026 置信度 0.82
• Flexible Carbon Nanotube Complementary Metal-Oxide-Semiconductor Integrated Circuits with Ultrastrong Radiation Resistance.
  europepmc 2026 置信度 0.80
• Intrinsically Stretchable and Self-Healing Polymer Semiconductor Materials for Wearable Electronics.
  europepmc 2026 置信度 0.80
• Microstructure Semiconductor Materials and Optoelectronic Applications.
  europepmc 2026 置信度 0.80
• Newly Emerging Nanotechnologies of Innovative Devices for Radioisotope Batteries.
  europepmc 2026 置信度 0.80
• 4K Self-Rectifying Resistive Memory Crossbar Array for Reliable Pattern Recognition.
  europepmc 2026 置信度 0.80
• Optimization of a high-temperature thermoelectric generator using semiconductor devices via a genetic algorithm-driven design.
  europepmc 2026 置信度 0.80
• Semiconductor Device Physics and Design
  crossref 2007-11-05T15:40:22Z 置信度 0.70
• A Low Voltage SANOS Nonvolatile Semiconductor Memory (NVSM) Device
  crossref Yijie Zhao, Xiaonan Wang, Huiling Shang, M.H. White 2006-03-10T11:50:57Z 置信度 0.70
• A concept of semiconductor optical routing device utilizing minority carrier drift
  crossref H. Tsukamoto, T.D. Boone, J.M. Woodall 2004-07-08T20:05:44Z 置信度 0.70
• Semiconductor Physics
  crossref Malcolm E. Goodge 2015-10-07T17:46:28Z 置信度 0.70
• Novel Reconfigurable Semiconductor Photonic Bandgap-MEMS Device
  crossref Weimin Zhou, D. Mackie, M. Taysing-Lara, G. Dang 等 2006-03-10T16:50:57Z 置信度 0.70
• Analysis of the Basic Stationary Semiconductor Device Equations
  crossref Peter A. Markowich 2013-01-05T16:29:38Z 置信度 0.70
• Discrete Semiconductor Devices
  crossref Malcolm E. Goodge 2015-10-07T21:46:28Z 置信度 0.70
• Failures of Semiconductor Device
  crossref 2008-03-21T15:50:32Z 置信度 0.70
• Compound Semiconductor Device Physics
  crossref 2016-08-03T03:15:39Z 置信度 0.70
• Semiconductor Device Synthesis
  crossref A. F. Levi 2017-07-14T17:16:49Z 置信度 0.70
• Semiconductor Junctions
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• Singular Perturbation Analysis of the Stationary Semiconductor Device Problem
  crossref Peter A. Markowich 2013-01-05T11:29:38Z 置信度 0.70
• Metal—Semiconductor Field Effect Transistors
  crossref Sandip Tiwari 2013-11-18T16:34:56Z 置信度 0.70
• A deterministic approach to the spatial origin of semiconductor device current noise for semiclassical transport
  crossref B.A. Noaman, C.E. Korman 2010-01-20T19:20:17Z 置信度 0.70
• Semiconductor–semiconductor Heterojunction Cells
  crossref Stephen J. Fonash 2010-05-17T06:10:27Z 置信度 0.70
• Semiconductor Laser Device-Level Characteristics
  crossref Clement K Law 2016-03-01T21:06:31Z 置信度 0.70
• Semiconductor nanostructures for device applications
  Στην παρούσα διατριβή παρουσιάζεται η σύνθεση ημιαγώγιμων νανοδομών και η εφαρμογή τους σε διατάξεις. Μέρος 1 Παρουσιάζεται η σύνθεση επιταξιακών εξαγωνικών δίσκων οξειδίου του Χαλκού CuO μέσω μίας υδροθερμικής διαδικασίας ανάπτυξης χαμηλής θερμοκρασίας. Η μορ…
  crossref Μοχάμεντ Άμπακερ-Ανταμ 2021-09-06T11:13:42Z 置信度 0.70
• Microwave heating for advanced semiconductor processing
  crossref J.H. Booske 2004-07-08T16:05:44Z 置信度 0.70
• 2009 International Semiconductor Device Research Symposium
  crossref 2020-01-21T15:01:51Z 置信度 0.70
• International Semiconductor Device Research Symposium, 2003
  crossref 2020-02-04T00:53:05Z 置信度 0.70
• Modelling of Semiconductor Laser Diodes
  crossref Roel Baets 2011-10-05T05:14:30Z 置信度 0.70
• 2005 International Semiconductor Device Research Symposium
  crossref 2020-02-03T12:19:52Z 置信度 0.70
• Semiconductor device simulation
  crossref 2004-11-26T05:13:10Z 置信度 0.70
• Introductory Semiconductor Device Physics
  crossref Greg Parker 2018-04-03T13:25:37Z 置信度 0.70
• SEMICONDUCTOR CARRIER TRANSPORT EQUATIONS
  crossref 2012-11-20T08:30:31Z 置信度 0.70
• Physical Models for Compound Semiconductor Devices
  crossref Michael Shur 2011-10-05T05:14:30Z 置信度 0.70
• Copyright
  crossref 2013-11-18T21:35:12Z 置信度 0.70
• SEMICONDUCTOR DEVICE CONCEPTS
  crossref GENERAL ELECTRIC CO SCHENECTADY NY 2017-09-15T17:19:31Z 置信度 0.70
• Specification for Semiconductor Device Passivation Opening Layouts
  crossref 2008-08-28T18:08:31Z 置信度 0.70
• Dedication
  crossref 2013-11-18T21:35:12Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2014-06-18T21:48:22Z 置信度 0.70
• Semiconductor nanostructures
  crossref Zhen Wu 2021-05-10T17:10:59Z 置信度 0.70
• A Note on Semiconductor Device Fabrication
  crossref I. Berman 2017-09-15T11:44:10Z 置信度 0.70
• Quantumistor: A Novel Semiconductor Device
  A novel multi-terminal quantum transistor device is presented that leverages coherent scattering and multi-path interference to enable multi-input, multi-output signal processing beyond the conventional binary switching paradigm. A tight-binding framework is e…
  europepmc Usama Thakur 2025 置信度 0.80
• The economics of photovoltaic device technologies
  crossref K. Zweibel 2010-01-20T19:20:17Z 置信度 0.70
• Practical Aspects of Device Modelling
  crossref Joseph A. Barnard 2011-10-05T05:14:30Z 置信度 0.70
• Semiconductor Device Technology: An Overview
  crossref Leonid Tsybeskov 2026-06-30T18:28:53Z 置信度 0.70
• Semiconductor Lasers
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Semiconductor Physics
  crossref 2026-04-24T21:17:29Z 置信度 0.70
• Semiconductor Photodetectors
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Statistical Models for Device Reliability; An Overview
  crossref J. Møltoft 2012-07-29T00:04:34Z 置信度 0.70
• Semiconductor devices. Mechanical and climatic test methods
  crossref 2017-07-11T16:05:05Z 置信度 0.70
• Metal-molecule-semiconductor heterostructures for nanoelectronic applications
  crossref S. Lodha, D.B. Janes 2004-07-08T20:05:44Z 置信度 0.70
• Semiconductor Device Technology
  crossref Malcolm E. Goodge 2015-10-07T17:46:28Z 置信度 0.70
• Semiconductor diode lasers for telecommunications
  crossref W.I. Wang 2002-11-13T23:37:42Z 置信度 0.70
• Industrial Relevance of Device Modelling
  crossref Anthony J. Holden 2011-12-11T09:54:12Z 置信度 0.70
• Welcome
  crossref 2011-06-07T18:33:07Z 置信度 0.70
• Index
  crossref 2013-11-18T16:34:57Z 置信度 0.70
• Award
  crossref 2010-01-20T19:20:17Z 置信度 0.70
• A Semiconductor Device Noise Model: A Deterministic Approach to Semiconductor Device Current Noise for Semiclassical Transport
  crossref B. A. Noaman, C. E. Korman, Massimo Macucci, Giovanni Basso 2009-05-04T18:39:32Z 置信度 0.70
• Committee
  crossref 2010-01-20T14:20:17Z 置信度 0.70
• SelfElectroopticEffect Device
  crossref 2015-05-18T23:24:59Z 置信度 0.70
• Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  crossref 2017-04-24T10:31:13Z 置信度 0.70
• 2011 International Semiconductor Device Research Symposium (ISDRS)
  crossref 2020-01-21T13:56:34Z 置信度 0.70
• Semiconductor devices. Micro-electromechanical devices
  crossref 2019-04-29T20:34:24Z 置信度 0.70
• Front Matter
  crossref 2013-11-18T21:34:57Z 置信度 0.70