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• Advanced Device Structures
  crossref 2011-06-08T08:59:25Z 置信度 0.70
• Glossary
  crossref 2013-11-18T16:34:57Z 置信度 0.70
• Redesign and optimization of semiconductor devices
  crossref Petru Andrei, Liviu Oniciuc 2008-01-11T20:07:19Z 置信度 0.70
• Bipolar transistor
  crossref 2020-07-10T00:28:35Z 置信度 0.70
• RF and Microwave Semiconductor Device Handbook
  crossref 2010-02-23T10:02:18Z 置信度 0.70
• Gunn diode
  crossref 2020-07-10T00:28:35Z 置信度 0.70
• Moldless semiconductor device and PV device module
  crossref 2005-02-16T11:50:31Z 置信度 0.70
• Semiconductor Device Modelling
  crossref 2011-10-05T05:14:30Z 置信度 0.70
• Ferromagnet-semiconductor hybrid Hall effect device
  crossref M. Johnson, B.R. Bennett 2002-11-22T16:45:27Z 置信度 0.70
• The semiconductor laser diode
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.70
• Electric Fields at Semiconductor Interfaces by momentum-resolved 4D STEM: towards Correlation with Device Characteristics
  crossref Kerstin Volz 2025-02-06T14:43:15Z 置信度 0.70
• Major technical processes used in semiconductor device fabrication
  crossref 2011-10-06T10:57:21Z 置信度 0.70
• Overview of Semiconductor Device Trends
  crossref 2003-04-02T02:20:59Z 置信度 0.70
• Diamond wafer technologies for semiconductor device applications
  crossref 2018-06-22T23:40:23Z 置信度 0.70
• Nuclear Methods in the Characterization of Semiconductor Reliability
  crossref J. C. Soares 2012-07-28T20:04:34Z 置信度 0.70
• A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms.
  Reliability assessment of semiconductor devices increasingly requires the consideration of multiple degradation mechanisms acting simultaneously over long stress durations. Conventional lifetime qualification and prediction approaches rely on simplified assump…
  europepmc Joseph B. Bernstein, Tsuriel Avraham, Bin Wang 2026 置信度 0.80
• Application of the moving boundary truncated grid method to semiconductor device simulations in the framework of the Boltzmann-Bhatnagar-Gross-Krook equation.
  europepmc 2025 置信度 0.80
• The mixed virtual element method with optimal convergence for the semiconductor device problem
  Abstract This paper is concerned with the virtual element method for the semiconductor device problem on polygonal meshes. Specifically, The potential equation is discretized by the mixed virtual element method and the electron and hole density equations by th…
  europepmc XIndong Li, Wenwen Xu, LU Yang 2024 置信度 0.80
• Dual-Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral Responsivity.
  europepmc 2024 置信度 0.80
• Numerical investigation on the convergence of self-consistent Schrödinger-Poisson equations in semiconductor device transport simulation.
  Abstract Semiconductor devices at the nanoscale with low-dimensional materials as channels exhibit quantum transport characteristics, thereby their electrical simulation relies on the self-consistent solution of the Schrödinger-Poisson equations. While the non…
  europepmc Junyan Zhu, Jiang Cao, Chen Song, Bo Li 等 2024 置信度 0.80
• Large-Language-Model-Based AI Agent for Organic Semiconductor Device Research.
  europepmc 2024 置信度 0.80
• A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETS
  Based on the minimum conduction band edge caused by the minimum channel potential resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied by the Fermi-Dirac distribution function on the source and drain sides, a unified semicon…
  europepmc Te-Kuang Chiang 2024 置信度 0.80
• Numerical investigation of a graphene-on-semiconductor device for optical monitoring of cell electrophysiology.
  europepmc Jon Gorecki, Steffi Krause 2023-11-24T05:01:39Z 置信度 0.80
• Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines.
  Advancements in the semiconductor industry introduce novel channel materials, device structures, and integration methods, leading to intricate physics challenges when characterizing devices at circuit level. Nevertheless, accurate models for emerging devices a…
  europepmc Xufan Li, Zhenhua Wu, G. Rzepa, M. Karner 等 2024-02-06 置信度 0.80 Process (computing)Computer scienceStructuringSemiconductor deviceElectronic engineering
• An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis
  The mathematical model is formulated by a nonlinear system of initial-boundary problem including four partial differential equations: an elliptic equation for electrostatic potential, two convection-diffusion equations for electron concentration and hole conce…
  europepmc Yirang Yuan, Changfeng Li, Huailing Song 2024 置信度 0.80
• Single-molecule protein sequencing on a semiconductor device.
  europepmc 2022 置信度 0.80
• Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform.
  europepmc 2023 置信度 0.80
• Influences of point defects on electron transport of two-dimensional gep semiconductor device.
  europepmc 2023 置信度 0.80
• Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device.
  europepmc 2023 置信度 0.80
• Oxidation Differences on Si- vs. C- terminated Surfaces of SiC during Planarization in the Fabrication of High-power, High-frequency Semiconductor Device
  europepmc 2023 置信度 0.80
• Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device.
  europepmc 2022 置信度 0.80
• Mathematical model and a block-centered difference approximation for a semiconductor device problem with heat and magnetic influences *
  Abstract In this paper, we present a mathematical model with initial-boundary values and a block-centered approximation for a new semiconductor device type. Two factors, heat and magnetic influences are considered. This discussion is an important and basic sim…
  europepmc Yuan Yirang, Li Changfeng, Liu Yunxin 2022 置信度 0.80
• A mass conservative characteristic finite element method with unconditional optimal convergence for semiconductor device problem
  europepmc 2022 置信度 0.80
• Super-Resolution Optical Microscopy for Investigations of Defects in Semiconductor Device
  Abstract Ripples scattering of sidewall in pattern devices is efficient and necessary for monitoring the semiconductor fabrication process. As a step towards improving the imaging quality in terms of scattering, an attempt has been made to use our recently rep…
  europepmc Nagendra Prasad Yadav, Guozhen Hu, Zhengpeng Yao 2021 置信度 0.80
• Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability.
  europepmc 2022 置信度 0.80
• Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication.
  europepmc 2021 置信度 0.80
• 1.7kV Fully-Vertical GaN Trench MOSFET with Nitrogen Ion-Implanted Guard Rings.
  This work presents a high-performance fully vertical GaN trench MOSFET on GaN substrate, featuring a selective nitrogen ion-implanted guard rings edge termination. The device exhibits a high breakdown voltage of 1715 V, a normally-off operation with a threshol…
  pubmed Xie Y, Yang C, Mao W, Peng G 等 2026 置信度 0.82
• Non-destructive characterization of extended crystalline defects in confined semiconductor device structures.
  europepmc 2018 置信度 0.80
• Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts.
  europepmc 2018 置信度 0.80
• Strain engineering for enhanced photoresponse of multilayer InSe flexible devices with a metal-semiconductor-metal structure.
  Strain engineering has been a promising strategy for enhancing the properties of electronics and optoelectronics based on two-dimensional (2D) materials, which exhibit extraordinary mechanical, electrical and optical properties. However, two-terminal flexible …
  pubmed Cui D, Shen S, Wu W, Yue X 等 2026 置信度 0.82
• Zinc chalcogenide semiconductor nanocrystals: from synthesis to optoelectronic applications.
  europepmc 2026 置信度 0.80
• Direct Triboelectric Programming of a Ferroelectric Synaptic Transistor for Neuromorphic Tactile Perception.
  europepmc 2026 置信度 0.80
• Wake-Up and Fatigue under Electrical Cycling in HfO<sub>2</sub>-Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices.
  HfO 2 -based ferroelectrics have attracted intensive research interest as promising candidates for next-generation nonvolatile memory, particularly due to their excellent complementary metal-oxide-semiconductor (CMOS) compatibility and scalability. Unlike conv…
  pubmed Kim H, Lee S, Choi H, Park M 等 2026 置信度 0.82
• Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.
  europepmc 2026 置信度 0.80
• Scalable Synthesis of 3D Hierarchical MoS<sub>2</sub> as a Durable, High-Charge-Retention Friction Layer for the Facile Fabrication of High-Power Triboelectric Nanogenerators.
  Given the increasing demand for sustainable energy and self-powered devices, energy-harvesting technologies, such as triboelectric nanogenerators (TENGs), are drawing attention. To address the short charge retention in conventional polymer materials, 2D materi…
  pubmed Jung E, Song J, Hwang SM, Myoung J 等 2026 置信度 0.82
• Scaling challenges and engineering approaches for oxide semiconductor FETs toward display and memory systems.
  europepmc 2026 置信度 0.80
• Stateful Logic Using Selector-Only-Memory With Tunable Operation Directionality.
  The growing demand for energy- and area-efficient computing in edge devices has highlighted the limitations of conventional von Neumann architectures, which suffer from the memory bottleneck due to frequent data transfer between logic and memory units. Process…
  pubmed Song JH, Mun YY, Yang MK, Kim GH 2026 置信度 0.82
• Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors.
  europepmc 2026 置信度 0.80
• Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device.
  europepmc 2017 置信度 0.80
• Interface Engineering for Scalable Optoelectronic Reservoir Computing.
  europepmc 2026 置信度 0.80
• STARE: a semiconductor-integrated transmit-array architecture for 6G beamforming.
  europepmc 2026 置信度 0.80
• Solution-Processed Submicron-Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V.
  europepmc 2026 置信度 0.80
• A Unified Flash Memory Platform for Mode-Adaptive and Robust AI Computation.
  Computing-in-memory (CIM) architectures offer a promising route toward energy-efficient artificial intelligence by reducing data-movement overhead. However, most existing CIM hardware operates at a fixed trade-off between accuracy, energy efficiency, and robus…
  pubmed Yu D, Hwang H, Oh B, Lee J 等 2026 置信度 0.82
• Nitrogen-Vacancy Centers in Fluorescent Nanodiamonds: Emerging Applications from Healthcare Diagnostics to Semiconductor Metrology.
  europepmc 2026 置信度 0.80
• Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025.
  europepmc 2026 置信度 0.80
• Wafer-Scale All-Silicon Self-Rectifying Memristor for Synaptic Response and Reservoir Computing.
  Silicon p-n junctions have remained an indispensable building block of electronics since their invention in the Shockley days. Likewise, an abrupt p-n junction has served as a foundational model in semiconductor textbooks. In this work, we report on an p-n jun…
  pubmed Yoon JH, Cho SH, Moroshkin P, Kim S 等 2026 置信度 0.82
• In operando imaging of the space-charge region in a 4H-SiC MOSCAP using STEM-EBIC.
  europepmc 2026 置信度 0.80
• Direct resist-free patterning of an organic semiconductor via thermal scanning probe lithography.
  europepmc 2026 置信度 0.80
• Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers.
  europepmc 2026 置信度 0.80
• Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases.
  The parameter degradation and failure mechanisms of 1200 V asymmetric trench-type (AT) silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under various single and repetitive surge currents, with various gate bias voltages (V GS …
  pubmed Yan M, Wang Z, Chen D, Li Y 等 2026 置信度 0.82
• Retinomorphic Organic Infrared Imager Selectable between Frame-Based and Event-Driven Detection Modes.
  This study presents a reconfigurable retinomorphic infrared imager that can be electrically switched between two complementary modes: a motion mode that delivers streamlined spiking outputs for efficient motion tracking and a static mode that integrates charge…
  pubmed Kim W, Xia Z, Zhao T, Gupta SD 等 2026 置信度 0.82
• Weight-four parity checks in a spin-shuttling architecture.
  Recent advances in coherent spin shuttling have made sparse semiconductor spin-qubit arrays an appealing solid-state platform to realize quantum processors 1-7 . The dynamic and long-range connectivity enabled by shuttling is also essential for many quantum er…
  pubmed Undseth B, Meggiato N, Wu YH, Katiraee-Far SR 等 2026 置信度 0.82
• Thin-Layer NbOCl<sub>2</sub> Flat-Band Semiconductor for Efficient PEC Photodetection.
  europepmc 2026 置信度 0.80
• Machine Learning-Enabled In Situ Diagnostics for Intelligent Plasma-Based Semiconductor Manufacturing: A Review.
  europepmc 2026 置信度 0.80
• TiON/NiO<i><sub>x</sub></i> Heterojunction Neuron for CMOS-Compatible Hardware Implementation of Activation Function in Neural Network.
  europepmc 2026 置信度 0.80
• Physics of Semiconductor Devices
  Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-c
  openalex J.-P. Colinge, Cindy Colinge 2002-01-01 置信度 0.72 MOSFETSemiconductorPhysicsSemiconductor deviceEngineering physics
• Physics of Semiconductor Devices
  openalex Simon M. Sze, Kwok K. Ng 2006-04-10 置信度 0.72 SemiconductorPhysicsEngineering physicsOptoelectronics
• Semiconductor Devices: Physics and Technology
  Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies…
  openalex Simon M. Sze 1985-04-01 置信度 0.72 SemiconductorDiodeOptoelectronicsSemiconductor deviceMESFET
• Physics of Semiconductor Devices
  openalex J.R. ABRAHAMS, Geoffrey Pridham 1966-01-01 置信度 0.72 SemiconductorPhysicsEngineering physicsOptoelectronics
• Physics of Semiconductor Devices
  openalex Samarth Jain, S. Radhakrishna 1987-08-29 置信度 0.72 PhysicsSemiconductorSemiconductor deviceEngineering physicsOptoelectronics
• The Physics of Semiconductor Devices
  openalex Rajendra Singh, Madhusudan Singh, Ashok Kapoor 2024-01-01 置信度 0.72 SemiconductorSemiconductor devicePhysicsEngineering physicsComputer science
• Physics of Semiconductor Devices
  openalex Geoffrey Pridham 1970-01-01 置信度 0.72 SemiconductorEngineering physicsPhysicsEngineeringOptoelectronics
• Physics and technology of semiconductor devices
  The Planar Technology. Solid-State Technology. Vapor-Phase Growth. Thermal Oxidation. Solid-State Diffusion. Semiconductors and Semiconductor Devices. Elements of Semiconductor Physics. Semiconductors under Non-Equilibrium Conditions. p-n Junction. Junction Tr…
  openalex Andrew S. Grove 1967-01-01 置信度 0.72 SemiconductorSiliconTransistorMaterials scienceOptoelectronics
• The physics of semiconductor devices
  openalex H. L. Grubin 1979-12-01 置信度 0.72 SemiconductorSemiconductor laser theorySemiconductor devicePhysicsSemiconductor optical gain
• Fundamentals of Power Semiconductor Devices
  openalex B. Jayant Baliga 2008-01-01 置信度 0.72 SemiconductorPower (physics)Materials scienceElectrical engineeringSemiconductor device
• A Survey of Wide Bandgap Power Semiconductor Devices
  Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for pow…
  openalex José del R. Millán, Philippe Godignon, X. Perpiñà, Amador Pérez‐Tomás 等 2013-06-14 置信度 0.72 Power semiconductor deviceConvertersSemiconductorSemiconductor deviceWide-bandgap semiconductor
• Analysis and Simulation of Semiconductor Devices
  openalex S. Selberherr 1984-01-01 置信度 0.72 SemiconductorSemiconductor deviceComputer scienceMaterials scienceOptoelectronics
• The physics of semiconductor devices
  openalex R. H. Rediker 1970-04-01 置信度 0.72 SemiconductorSemiconductor deviceEngineering physicsPhysicsOptoelectronics
• An integrated semiconductor device enabling non-optical genome sequencing
  The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing tec…
  openalex Jonathan M. Rothberg, Wolfgang Hinz, Todd M. Rearick, Jonathan H. Schultz 等 2011-07-01 置信度 0.72 ScalabilityDNA sequencingIntegrated circuitMassively parallelCMOS
• Physics of semiconductor devices
  Device physics of heterostructure and quantum devices advanced discrete devices characterization of semiconducting materials, unit processes and devices futuristic devices.
  openalex 1990-07-01 置信度 0.72 SemiconductorPhysicsEngineering physicsComputer scienceOptoelectronics
• Physics of semiconductor devices /2nd edition/
  openalex Simon M. Sze 1981-01-01 置信度 0.72 Engineering physicsComputer scienceData sciencePhysics
• The Monte Carlo Method for Semiconductor Device Simulation
  openalex Carlo Jacoboni, Paolo Lugli 1989-01-01 置信度 0.72 Monte Carlo methodSemiconductorSemiconductor deviceStatistical physicsPhysics
• Semiconductor device fundamentals
  I. SEMICONDUCTOR FUNDAMENTALS. 1. Semiconductors -- A General Introduction. General Material Properties. Crystal Structure. Crystal Growth. 2. Carrier Modeling. The Quantization Concept. Semiconductor Models. Carrier Properties. State and Carrier Distributions…
  openalex R.F. Pierret 1996-01-01 置信度 0.72 Bipolar junction transistorDiodeSchottky diodeDiffusion capacitanceOptoelectronics
• Semiconductor Device Modeling with Spice
  From the Publisher: With all the clarity and hands-on practicality of the best-selling first edition,this revised version explains the ins and outs of SPICE,plus gives new data on modeling advanced devices such as MESFETs,ISFETs,and thyristors. And because it…
  openalex P. Antognetti, Giuseppe Massobrio, Guiseppe Massobrio 1989-10-01 置信度 0.72 JFETSpiceMESFETTransistorBipolar junction transistor
• Semiconductor devices
  openalex Kanaan Kano 1997-12-01 置信度 0.72 SemiconductorMaterials scienceOptoelectronics
• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  In the past several years, research in each of the wide-band-gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high-temperature electronics and short-wavelengt…
  openalex H. Morkoç̌, S. Strite, Guangjun Gao, Mao Lin 等 1994-08-01 置信度 0.72 Materials scienceOptoelectronicsOhmic contactLight-emitting diodeWide-bandgap semiconductor
• Majorana fermions in a tunable semiconductor device
  The experimental realization of Majorana fermions presents an important problem due to their non-Abelian nature and potential exploitation for topological quantum computation. Very recently Sau et al. [Phys. Rev. Lett. 104, 040502 (2010)] demonstrated that a t…
  openalex Jason Alicea 2010-03-15 置信度 0.72 MAJORANAFermionSemiconductorOptoelectronicsPhysics
• Charge Coupled Semiconductor Devices
  In this paper we describe a new semiconductor device concept. Basically, it consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge (representing information) over the surface by moving the potential minima…
  openalex W. S. Boyle, George Smith 1970-04-01 置信度 0.72 Charge (physics)SemiconductorCapacitorMaxima and minimaOptoelectronics
• Semiconductor Material and Device Characterization
  Preface to Third Edition. 1 Resistivity. 1.1 Introduction. 1.2 Two-Point Versus Four-Point Probe. 1.3 Wafer Mapping. 1.4 Resistivity Profiling. 1.5 Contactless Methods. 1.6 Conductivity Type. 1.7 Strengths and Weaknesses. Appendix 1.1 Resistivity as a Function…
  openalex D.K. Schroder, Dieter K. Schroder 2005-04-07 置信度 0.72 Equivalent series resistanceSchottky diodeOptoelectronicsSchottky barrierDiode
• Power Semiconductor Devices
  The modern age of power electronics began with the introduction of thyristors in the late 1950s. Now there are several types of power devices available for high-power and high-frequency applications. The most notable power devices are gate turn-off thyristors,…
  openalex Leonard L. Grigsby 2007-05-30 置信度 0.72 SemiconductorPower (physics)Semiconductor deviceElectrical engineeringMaterials science
• Calculated elastic constants for stress problems associated with semiconductor devices
  Theoretical estimates or experimental determinations of stress fields associated with semiconductor devices are generally simplified with the aid of two elastic constants, Young's modulus E and Poisson's ratio ν. In this paper, a generalized expression for ν h…
  openalex William A. Brantley 1973-01-01 置信度 0.72 IsotropyElasticity (physics)SemiconductorCondensed matter physicsElastic modulus
• The Physics of Semiconductor Devices
  D A Fraser London: Clarendon/Oxford University Press 1977 pp ix + 148 price £5.95 This ambitious yet slim (148 page) volume is number 16 in the Oxford Physics Series, and is aimed at undergraduate students of physics, electrical engineering, electronics and ma…
  openalex Andrew Grant 1978-04-01 置信度 0.72 Engineering physicsSemiconductorElectronicsVolume (thermodynamics)Applied physics
• Power semiconductor device figure of merit for high-frequency applications
  A figure of merit (the Baliga high-frequency figure of merit) is derived for power semiconductor devices operating in high-frequency circuits. Using this figure of merit, it is predicted that the power losses incurred in the power device will increase as the s…
  openalex B. Jayant Baliga, B.J. Baliga 1989-10-01 置信度 0.72 Figure of meritSilicon carbideSemiconductorGallium arsenideElectrical engineering
• A role for graphene in silicon-based semiconductor devices
  openalex Kinam Kim, Jae‐Young Choi, Taek Kim, Seong‐Ho Cho 等 2011-11-01 置信度 0.72 GrapheneSiliconSemiconductorMaterials scienceOptoelectronics
• New semiconductor device physics in polymer diodes and transistors
  openalex J. H. Burroughes, C.A. Jones, Richard H. Friend 1988-09-01 置信度 0.72 PolyacetylenePhotoexcitationSemiconductorOptoelectronicsDiode
• The Stationary Semiconductor Device Equations
  openalex Peter A. Markowich 1986-01-01 置信度 0.72 SemiconductorSemiconductor deviceEngineering physicsSemiconductor device fabricationEngineering
• Electromigration failure modes in aluminum metallization for semiconductor devices
  Two wear-out type failure modes involving aluminum metallization for semiconductor devices are described. Both modes involve mass transport by momentum exchange between conducting electrons and metal ions. The first failure mode is the formation of an electric…
  openalex J. R. Black 1969-01-01 置信度 0.72 ElectromigrationSiliconAluminiumMaterials scienceSemiconductor
• Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
  A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts, one of which serves as…
  openalex X. Lou, Christoph Adelmann, S. A. Crooker, E.S. Garlid 等 2007-02-20 置信度 0.72 PhysicsFerromagnetismSemiconductorSpin (aerodynamics)Condensed matter physics
• Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices
  Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and on…
  openalex Vincent Mourik, Kun Zuo, Sergey Frolov, Sébastien Plissard 等 2012-04-13 置信度 0.72 MAJORANAFermionAntiparticlePhysicsNanowire
• High speed semiconductor devices
  openalex 1991-02-01 置信度 0.72 SemiconductorSemiconductor deviceOptoelectronicsMaterials scienceComputer science