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• Trends in power semiconductor devices
  This paper reviews recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems. In the case of low voltage (100 V) power rectifiers, the silicon P-i-N rectifier continues to dominate but …
  openalex B. Jayant Baliga 1996-01-01 置信度 0.72 ThyristorPower semiconductor deviceElectrical engineeringSiliconRectifier (neural networks)
• Principles of semiconductor devices
  e relevant to modern devices * JFETs and MESFETs in a stand-alone chapter * Fifty-seven new problems and eleven new examples"--
  openalex Sima Dimitrijev 2005-10-27 置信度 0.72 SemiconductorMaterials scienceOptoelectronics
• The Quantum Hydrodynamic Model for Semiconductor Devices
  The classical hydrodynamic equations can be extended to include quantum effects by incorporating the first quantum corrections. These quantum corrections are $O( {\hbar ^2 } )$. The full three-dimensional quantum hydrodynamic (QHD) model is derived for the fir…
  openalex Carl L. Gardner 1994-04-01 置信度 0.72 Quantum hydrodynamicsPhysicsQuantum tunnellingConservation lawQuantum
• Production of large-area single-crystal wafers of cubic SiC for semiconductor devices
  A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lat…
  openalex Shigehiro Nishino, J. A. Powell, Hannes Will 1983-03-01 置信度 0.72 WaferMaterials scienceChemical vapor depositionSemiconductorOptoelectronics
• Nitride Semiconductor Devices: Principles and Simulation
  Preface. List of Contributors. Part 1 Material Properties. 1 Introduction (Joachim Piprek). 1.1 A Brief History. 1.2 Unique Material Properties. 1.3 Thermal Parameters. References. 2 Electron Bandstructure Parameters (Igor Vurgaftman and Jerry R. Meyer). 2.1 I…
  openalex 2007-01-26 置信度 0.72 SemiconductorComputer scienceOptoelectronicsMaterials science
• Metrology for the next generation of semiconductor devices
  europepmc Ndubuisi G. Orji, Mustafa Badaroglu, Brian M. Barnes, C. Beitia 等 2018 置信度 0.80 MetrologyIntegrated circuitLithographyDimensional metrologySemiconductor industry
• Advanced Theory of Semiconductor Devices
  Semiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from b…
  openalex K. Hess 2009-01-01 置信度 0.72 SemiconductorSemiconductor deviceMaterials scienceComputer scienceOptoelectronics
• Modern Semiconductor Devices for Integrated Circuits
  3. Electrons and holes are the major characters in the play and carry opposite charge. Their mass however is altered from the mass of an electron in vacuum. The altered mass is called e ective mass, mn and mp 4. The band model is the tool required for quantita…
  openalex Chenming Hu 2009-03-15 置信度 0.72 SemiconductorElectronEffective mass (spring–mass system)Band gapConduction band
• Single and multiband modeling of quantum electron transport through layered semiconductor devices
  Non-equilibrium Green function theory is formulated to meet the three main challenges of high bias quantum device modeling: self-consistent charging, incoherent and inelastic scattering, and band structure. The theory is written in a general localized orbital …
  openalex Roger K. Lake, Gerhard Klimeck, R. Chris Bowen, D. Jovanovic 1997-06-15 置信度 0.72 ScatteringCondensed matter physicsPhysicsScattering theoryBorn approximation
• Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
  The physics of electron transport in Si and GaAs is investigated with use of a Monte Carlo technique which improves the "state-of-the-art" treatment of high-energy carrier dynamics. (1) The semiconductor is modeled beyond the effective-mass approximation by us…
  openalex Massimo V. Fischetti, Steven E. Laux 1988-11-15 置信度 0.72 Velocity overshootMonte Carlo methodElectronPhysicsEffective mass (spring–mass system)
• Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review
  This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under hi…
  openalex Yvan Avenas, Laurent Dupont, Zoubir Khatir 2011-12-07 置信度 0.72 Materials scienceSaturation currentSemiconductorOptoelectronicsVoltage
• Semiconductor physics and devices basic principles
  Provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. This title deals with the electrical properties and characteristics of semiconductor materials and devices. It intends to bring together quantum mechan…
  openalex Donald A. Neamen 2003-01-01 置信度 0.72 SemiconductorSemiconductor deviceDiodeTransistorBipolar junction transistor
• Temperature measurements of semiconductor devices - a review
  There are numerous methods for measuring the temperature of an operating semiconductor device. The methods can be broadly placed into three generic categories: electrical, optical, and physically contacting. The fundamentals underlying each of the categories a…
  openalex D.L. Blackburn 2004-05-06 置信度 0.72 SemiconductorVariety (cybernetics)Temperature measurementComputer scienceSemiconductor device
• Negative capacitance effect in semiconductor devices
  Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The correct interpretation o…
  openalex M. Ershov, H.C. Liu, L. Li, M. Buchanan 等 1998-01-01 置信度 0.72 Transient (computer programming)CapacitanceTransient responseOptoelectronicsMaterials science
• Principles of semiconductor devices
  Abstract Describes the operation of many different semiconductor devices, starting with the p-n junction (in equilibrium, forward bias and reverse bias), and shows how similar principles underpin the first important type of transistor, the bipolar transistor. …
  openalex L. Solymár, Donald D. Walsh, R.R.A. Syms 2024-08-26 置信度 0.72 OptoelectronicsMicroelectronicsDiodeMaterials scienceSemiconductor
• Stretchable Organic Semiconductor Devices
  Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most st…
  openalex Yan Qian, Xinwen Zhang, Linghai Xie, Dianpeng Qi 等 2016-08-30 置信度 0.72 ElectronicsFlexibility (engineering)Stretchable electronicsMaterials scienceWearable technology
• Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
  A treatment of the self-heating problem is presented. It is based on the laws of phenomenological irreversible thermodynamics (e.g. Onsager's relations and conservation of total energy) and is also consistent with the physical models usually considered in the …
  openalex G. Wachutka 1990-01-01 置信度 0.72 ThermodynamicsThermal conductionIsothermal processHeat generationWork (physics)
• Displacement Damage Effects in Irradiated Semiconductor Devices
  A review of radiation-induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of…
  openalex J. R. Srour, James W. Palko 2013-06-01 置信度 0.72 Radiation damageMaterials scienceDisplacement (psychology)Semiconductor deviceSilicon
• Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
  Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of metal and nitride thin films has increased only recently, driven by the need for highly conformal nanoscale thin films in modern semiconductor device manufacturi…
  openalex H. Kim 2003-11-01 置信度 0.72 Atomic layer depositionMaterials scienceThin filmNanotechnologyNitride
• modern semiconductor device physics
  Bipolar Transistors (P. Asbeck). Compound-Semiconductor Field-Effect Transistors (M. Shur & T. Fjeldly). MOSFETs and Related Devices (S. Hillenius). Power Devices (B. Baliga). Quantum-Effect and Hot-Electron Devices (S. Luryi & A. Zaslavsky). Active Microwave …
  openalex Simon M. Sze 1997-01-01 置信度 0.72 DiodeOptoelectronicsBipolar junction transistorSemiconductorSemiconductor device
• Complete Guide to Semiconductor Devices
  A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for fa…
  openalex Kwok K. Ng 2010-01-01 置信度 0.72 SemiconductorComputer scienceOptoelectronicsMedicineMaterials science
• Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
  Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations t…
  openalex Federico Capasso 1987-01-09 置信度 0.72 SemiconductorHeterojunctionMolecular beam epitaxyOptoelectronicsBand gap
• Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
  Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers …
  openalex Xiaochi Liu, Min Sup Choi, E. H. Hwang, Won Jong Yoo 等 2021-12-15 置信度 0.72 Materials scienceSemiconductorSchottky barriervan der Waals forceOptoelectronics
• Enhancing semiconductor device performance using ordered dopant arrays
  openalex Takahiro Shinada, Shintaro Okamoto, Takahiro Kobayashi, Iwao Ohdomari 2005-10-01 置信度 0.72 DopantMaterials scienceDopingSemiconductorOptoelectronics
• Fine structure of heat flow path in semiconductor devices: A measurement and identification method
  openalex Vladimı́r Székely, Tran Van Bien 1988-09-01 置信度 0.72 ChipThermal resistanceHeaderMaterials scienceSemiconductor
• Numerical methods for semiconductor device simulation
  This paper describes the numerical techniques used to solve the coupled system of nonlinear partial differential equations which model semiconductor devices. These methods have been encoded into our device simulation package which has successfully simulated co…
  openalex Randolph E. Bank, Donald J. Rose, Wolf Fïchtner 1983-09-01 置信度 0.72 Nonlinear systemDiscretizationSemiconductor devicePartial differential equationComputer science
• Soft errors in advanced semiconductor devices-part I: the three radiation sources
  In this review paper, we summarize the key distinguishing characteristics and sources of the three primary radiation mechanisms responsible for inducing soft errors in semiconductor devices and discuss methods useful for reducing the impact of the effects in f…
  openalex R. Baumann 2001-03-01 置信度 0.72 Semiconductor deviceSemiconductorKey (lock)RadiationComputer science
• Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program
  The FIELDAY program simulates semiconductor devices of arbitrary shape in one, two, or three dimensions operating under transient or steady-state conditions. A wide variety of physical effects, important in bipolar and field-effect transistors, can be modeled.…
  openalex E. M. Buturla, P.E. Cottrell, B.M. Grossman, K. A. Salsburg 1981-07-01 置信度 0.72 Finite element methodFlexibility (engineering)Computer scienceSemiconductor deviceTransient (computer programming)
• Bipolar Semiconductor Devices
  A text designed for graduate courses in bipolar semiconductors, which concentrates on theory and design, relating the device structure parameters to the device terminal characteristics.
  openalex D.J. Roulston 1990-08-01 置信度 0.72 SemiconductorMaterials scienceOptoelectronics
• Wigner-function model of a resonant-tunneling semiconductor device
  A model of an open quantum system is presented in which irreversibility is introduced via boundary conditions on the single-particle Wigner distribution function. The Wigner function is calculated in a discrete approximation by solution of the Liouville equati…
  openalex William R. Frensley 1987-07-15 置信度 0.72 Wigner distribution functionQuantum tunnellingPhysicsResonant-tunneling diodeTransient (computer programming)
• The Physics of Semiconductor Devices
  The rapidly developing field of electronics is now dominated by devices which are operationally dependent on the physical properties of semiconductors. This clear and comprehensive text explains the effects employed in each class of device and derives formulae…
  openalex David A. Fraser 1977-01-01 置信度 0.72 SemiconductorElectronicsSemiconductor deviceField (mathematics)Engineering physics
• Thermal failure in semiconductor devices
  openalex V. M. Dwyer, Andrew Franklin, David Campbell 1990-05-01 置信度 0.72 ParallelepipedSemiconductorFormalism (music)ThermalSemiconductor device
• Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices
  We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have d…
  openalex Daniel M. Fleetwood, P.S. Winokur, R.A. Reber, T.L. Meisenheimer 等 1993-05-15 置信度 0.72 Annealing (glass)OxideMaterials scienceOptoelectronicsTransistor
• Fundamentals of Semiconductor Devices
  openalex 1966-01-01 置信度 0.72 SemiconductorSemiconductor deviceMaterials scienceOptoelectronicsEngineering physics
• Spatial Soliton Pixels in Semiconductor Devices
  Semiconductor devices are the most appealing systems for information encoding using two-dimensional spatial solitons, recently reported both theoretically and experimentally in model systems. We show that stable solitons can be realized and controlled, both in…
  openalex Massimo Brambilla, L. A. Lugiato, Franco Prati, Lorenzo Spinelli 等 1997-09-15 置信度 0.72 SolitonSemiconductorPhysicsSemiconductor laser theoryNonlinear system
• The damaging effects of the acidity in PEDOT:PSS on semiconductor device performance and solutions based on non-acidic alternatives
  Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, has been widely used as an effective hole transporting material in many different organic semiconductor devices for well over a decade.
  openalex Joseph Cameron, Peter J. Skabara 2020-01-01 置信度 0.72 PEDOT:PSSSulfonateStyreneMaterials scienceOrganic semiconductor
• Spreading Resistance in Cylindrical Semiconductor Devices
  For cylindrical semiconductor components, computation of spreading resistance is considered a boundary value problem of the solid circular cylinder. Solutions of this problem may be used, for example, to characterize the thermal spreading resistance within the…
  openalex David P. Kennedy 1960-08-01 置信度 0.72 Spreading resistance profilingSemiconductorDiodeThermal resistanceCylinder
• Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
  Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the other…
  openalex Alex Q. Huang 2017-06-28 置信度 0.72 Renewable energySmart gridElectrical engineeringPower gridSemiconductor
• Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces
  Thin-film metal oxides are among the key materials used in organic semiconductor devices. As there are no intrinsic charge carriers in a typical organic semiconductor, all charges in the device must be injected from electrode/organic interfaces, whose energeti…
  openalex Mark Greiner, Zheng‐Hong Lu 2013-07-01 置信度 0.72 Materials scienceWork functionNanotechnologyOrganic semiconductorThin film
• Numerical analysis of heterostructure semiconductor devices
  A numerical method for analyzing heterostructure semiconductor devices is described. The macroscopic semiconductor equations for materials with position-dependent dielectric constant, bandgap, and densities-of-states are first cast into a form identical to tha…
  openalex Mark Lundstrom, R.J. Schuelke 1983-09-01 置信度 0.72 HeterojunctionSemiconductorMaterials scienceHeterojunction bipolar transistorNumerical analysis
• Optical semiconductor devices
  Basics of Optoelectronic pn-Junction Devices. Light-Emitting Diodes. Laser Diodes. Photodiodes. Optical Modulators. Device Fabrication and Packaging. Reliability. Application of Optoelectronic pn-Junction Devices. Index.
  openalex Mitsuo Fukuda 1999-01-01 置信度 0.72 SemiconductorOptoelectronicsMaterials science
• Semiconductor Devices: Basic Principles
  Electrons in Solids Electrons in Semiconductors Carrier Dynamics in Semiconductors Processing of Devices: A Review Junctions in Semiconductors: P-N Diodes Semiconductor Junctions with Metals and Insulators Bipolar Junction Transistors Field Effect Transistors:…
  openalex Jasprit Singh 2000-01-01 置信度 0.72 JFETMESFETSemiconductorOptoelectronicsDiode
• Semiconductor Device Modeling For VLSI
  openalex Kwyro Lee, M. S. Shur, Tor A. Fjeldly, Trond Ytterdal 1993-01-01 置信度 0.72 Very-large-scale integrationSemiconductorComputer scienceOptoelectronicsMaterials science
• The 1.7 Kilogram Microchip:  Energy and Material Use in the Production of Semiconductor Devices
  The scale of environmental impacts associated with the manufacture of microchips is characterized through analysis of material and energy inputs into processes in the production chain. The total weight of secondary fossil fuel and chemical inputs to produce an…
  openalex Eric Williams, Robert U. Ayres, Miriam Heller 2002-10-25 置信度 0.72 KilogramSemiconductorProduction (economics)Semiconductor materialsSemiconductor device
• A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
  Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, …
  openalex Boyi Zhang, Shuo Wang 2019-11-15 置信度 0.72 EMIElectromagnetic interferencePower electronicsElectrical engineeringElectromagnetic compatibility
• Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
  Plasma etching technologies such as reactive ion etching (RIE), isotropic etching, and ashing/plasma cleaning are the currently used booster technologies for manufacturing all silicon devices based on the scaling law. The needs-driven conversion from the wet e…
  openalex Haruhiko Abe, Masahiro Yoneda, Nobuo Fujiwara 2008-03-01 置信度 0.72 Reactive-ion etchingEtching (microfabrication)Materials scienceDry etchingOptoelectronics
• Techniques for small-signal analysis of semiconductor devices
  Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, …
  openalex S.E. Laux 1985-10-01 置信度 0.72 Context (archaeology)Steady state (chemistry)Computer scienceSIGNAL (programming language)Semiconductor device
• Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material
  A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC was made for interconnecting semiconductor devices. Sintering of the paste produced a microstructure containing micrometer-size porosity and a relative density of around…
  openalex John G. Bai, Ziyang Zhang, Jesus N. Calata, Guo‐Quan Lu 2006-08-29 置信度 0.72 Materials scienceSubstrate (aquarium)InterconnectionSolderingSintering
• A metal-free cathode for organic semiconductor devices
  We introduce a class of low-reflectivity, high-transparency, nonmetallic cathodes useful for a wide range of electrically active, transparent organic devices. The metal-free cathode employs a thin film of copper phthalocyanine (CuPc) capped with a film of low-…
  openalex G. Parthasarathy, P. E. Burrows, V. Khalfin, V. G. Kozlov 等 1998-04-27 置信度 0.72 Materials scienceCathodeOptoelectronicsIndium tin oxideOLED
• Making Nonmagnetic Semiconductors Ferromagnetic
  REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of…
  openalex Hideo Ohno 1998-08-14 置信度 0.72 FerromagnetismCondensed matter physicsMagnetic semiconductorSemiconductorHeterojunction
• Physics of Semiconductor Devices (2nd edn)
  S M Sze 1981 Chichester: John Wiley xii + 868 pp price £28 The first edition of this book has become a 'standard', indeed it is often treated as the 'Bible' on the subject. The second edition is timely because the earlier volume has been overtaken by events in…
  openalex P J Dobson 1982-04-01 置信度 0.72 MicroelectronicsSubject (documents)Engineering physicsVolume (thermodynamics)Semiconductor
• Semiconductor physics and devices
  This textbook introduces the physics of semiconductor materials and devices.It provides a comprehensive coverage of the fundamentals of semiconductors, the pn-junction, and field-effect transistors.A description of band-gap engineering is included, and the boo…
  openalex 2006-04-20 置信度 0.72 SemiconductorPhysicsEngineering physicsNanotechnologyMaterials science
• Nitride-based semiconductors for blue and green light-emitting devices
  openalex F. A. Ponce, D. P. Bour 1997-03-01 置信度 0.72 OptoelectronicsLight-emitting diodeBlue lightGreen laserMaterials science
• Analysis of mathematical models of semiconductor devices
  openalex M. S. Mock 1983-01-01 置信度 0.72 SemiconductorComputer scienceOptoelectronicsMaterials science
• Quantitative Determination of Organic Semiconductor Microstructure from the Molecular to Device Scale
  A study was conducted to demonstrate quantitative determination of organic semiconductor microstructure from the molecular to device scale. The quantitative determination of organic semiconductor microstructure from the molecular to device scale was key to obt…
  openalex Jonathan Rivnay, Stefan C. B. Mannsfeld, Chad E. Miller, Alberto Salleo 等 2012-08-09 置信度 0.72 ChemistryMicrostructureSemiconductorScale (ratio)Organic semiconductor
• Nitride Semiconductors and Devices
  openalex H. Morkoç̌ 1999-01-01 置信度 0.72 Gallium nitrideNanotechnologyEngineeringEngineering physicsMaterials science
• Recent advances in diamond power semiconductor devices
  openalex Hitoshi Umezawa 2018-02-02 置信度 0.72 Materials scienceOptoelectronicsDiamondSchottky diodeFabrication
• Physics of Semiconductor Devices
  Volume 1: Nanostructures Optoelectronics III-V materials and devices Photovoltaics Sensors Silicon materials and devices. Volume 2: Infrared materials and devices Microwave devices Microelectronics Miscellaneous Late arrivals.
  openalex Daipayan Roy, Sumanshu Agarwal, Vikram Kumar 1998-05-01 置信度 0.72 SemiconductorEngineering physicsPhysicsOptoelectronics
• Spintronics: A Spin-Based Electronics Vision for the Future
  This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatil…
  openalex Stefan Wolf, D. D. Awschalom, R. A. Buhrman, J.M. Daughton 等 2001-11-16 置信度 0.72 SpintronicsElectronicsSpin transistorSpin (aerodynamics)Spinplasmonics
• Fundamentals of Semiconductor Devices
  Fundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. …
  openalex Betty Lise Anderson, Richard Anderson 2004-01-01 置信度 0.72 DiodeSemiconductorBipolar junction transistorSemiconductor deviceOptoelectronics
• Interlayer Exchange Coupling in Semiconductor Magnetic/Nonmagnetic Superlattices
  The interlayer spin correlations in the magnetic/non-magnetic semiconductor superlattices are reviewed. The experimental evidences of interlayer exchange coupling in different all-semiconductor structures, based on neutronographic and magnetic studies, are pre…
  arxiv P. Kacman, J. Blinowski, H. Kepa, T. M. Giebultowicz 2002-02-21T15:11:54Z 置信度 0.78 cond-mat.mtrl-sci
• On-device Federated Learning with Flower
  Federated Learning (FL) allows edge devices to collaboratively learn a shared prediction model while keeping their training data on the device, thereby decoupling the ability to do machine learning from the need to store data in the cloud. Despite the algorith…
  arxiv Akhil Mathur, Daniel J. Beutel, Pedro Porto Buarque de Gusmão, Javier Fernandez-Marques 等 2021-04-07T10:42:14Z 置信度 0.78 cs.LGcs.AIcs.DC
• Thermomodulation studies of heat transport in heavy-doped n-GaAs by using the temperature dependence of metal-semiconductor contact resistance
  The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to determine the therm…
  arxiv A. Ya. Shul'man, N. A. Mordovets, I. N. Kotel'nikov 2005-01-08T07:39:36Z 置信度 0.78 cond-mat.mtrl-scicond-mat.stat-mech
• Coherent phenomena in semiconductors
  A review of coherent phenomena in photoexcited semiconductors is presented. In particular, two classes of phenomena are considered: On the one hand the role played by optically-induced phase coherence in the ultrafast spectroscopy of semiconductors; On the oth…
  arxiv Fausto Rossi 1997-11-19T09:15:47Z 置信度 0.78 cond-mat.mtrl-sci
• Optical Orientation in Ferromagnet/Semiconductor Hybrids
  The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be co…
  arxiv V. L. Korenev 2008-03-31T08:53:57Z 置信度 0.78 cond-mat.mes-hall
• Ferromagnetic semiconductors
  The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The natu…
  arxiv Tomasz Dietl 2002-01-16T20:29:27Z 置信度 0.78 cond-mat.mtrl-scicond-mat.str-el
• Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems
  Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS ferromagnetism in systems wi…
  arxiv Byounghak Lee, T. Jungwirth, A. H. MacDonald 2002-03-05T09:05:08Z 置信度 0.78 cond-mat.mtrl-scicond-mat.mes-hall
• Expected behaviour of different semiconductor materials in hadron fields
  The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A systematic t…
  arxiv I. Lazanu, S. Lazanu, M. Bruzzi 2000-06-22T07:08:24Z 置信度 0.78 physics.ins-dethep-ex
• IoTSense: Behavioral Fingerprinting of IoT Devices
  The Internet-of-Things (IoT) has brought in new challenges in, device identification --what the device is, and, authentication --is the device the one it claims to be. Traditionally, the authentication problem is solved by means of a cryptographic protocol. Ho…
  arxiv Bruhadeshwar Bezawada, Maalvika Bachani, Jordan Peterson, Hossein Shirazi 等 2018-04-11T07:51:22Z 置信度 0.78 cs.CR
• Physics-Informed Neural Networks for Device and Circuit Modeling: A Case Study of NeuroSPICE
  We present NeuroSPICE, a physics-informed neural network (PINN) framework for device and circuit simulation. Unlike conventional SPICE, which relies on time-discretized numerical solvers, NeuroSPICE leverages PINNs to solve circuit differential-algebraic equat…
  arxiv Chien-Ting Tung, Chenming Hu 2025-12-29T17:28:35Z 置信度 0.78 cs.AIphysics.app-ph
• End-to-end Recording Device Identification Based on Deep Representation Learning
  Deep learning techniques have achieved specific results in recording device source identification. The recording device source features include spatial information and certain temporal information. However, most recording device source identification methods b…
  arxiv Chunyan Zeng, Dongliang Zhu, Zhifeng Wang, Minghu Wu 等 2022-12-05T07:56:04Z 置信度 0.78 cs.SDeess.AS
• Is the regime with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimensions?
  We discuss the possibility of diffusive conduction and thus of suppression of shot noise by a factor 1/3 in mesoscopic semiconductor devices with two-dimensional and one-dimensional potential disorder, for which existing experimental results do not provide a c…
  arxiv Paolo Marconcini, Massimo Macucci, Demetrio Logoteta, Massimo Totaro 2013-02-28T21:08:37Z 置信度 0.78 cond-mat.mes-hall
• Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
  The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate…
  arxiv Javier Martin-Sanchez, Rinaldo Trotta, Antonio Mariscal, Rosalia Serna 等 2017-10-19T23:46:04Z 置信度 0.78 cond-mat.mes-hallphysics.app-ph
• An improved model for describing the net carrier recombination rate in semiconductor devices
  Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the net carrier recombina…
  arxiv M. L. Inche Ibrahim, Anvar A. Zakhidov 2021-08-23T13:36:56Z 置信度 0.78 physics.app-phcond-mat.other
• Computational Intelligence Characterization Method of Semiconductor Device
  Characterization of semiconductor devices is used to gather as much data about the device as possible to determine weaknesses in design or trends in the manufacturing process. In this paper, we propose a novel multiple trip point characterization concept to ov…
  arxiv Eric Liau, Doris Schmitt-Landsiedel 2007-10-25T09:41:43Z 置信度 0.78 cs.AIcs.NE
• FIBONACCI SUPERLATTICES OF NARROW-GAP III-V SEMICONDUCTORS
  We report theoretical electronic structure of Fibonacci superlattices of narrow-gap III-V semiconductors. Electron dynamics is accurately described within the envelope-function approximation in a two-band model. Quasiperiodicity is introduced by considering tw…
  arxiv F. Dominguez-Adame, E. Macia, B. Mendez, C. L. Roy 等 1995-03-28T17:16:31Z 置信度 0.78 cond-mat
• On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
  This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its …
  arxiv Hermann Sellier, Benoit Hackens, Marco Pala, Frederico Martins 等 2011-04-11T19:46:23Z 置信度 0.78 cond-mat.mes-hall
• DDNet: A Unified Physics-Informed Deep Learning Framework for Semiconductor Device Modeling
  The accurate modeling of semiconductor devices plays a critical role in the development of new technology nodes and next-generation devices. Semiconductor device designers largely rely on advanced simulation software to solve the drift-diffusion equations, a c…
  arxiv Roberto Riganti, Matteo G. C. Alasio, Enrico Bellotti, Luca Dal Negro 2025-09-09T18:22:13Z 置信度 0.78 physics.comp-phcond-mat.dis-nn
• Bloch oscillations and Wannier-Stark localization in semiconductor superlattices
  The theoretical analysis of the ultrafast energy relaxation and transport phenomena in semiconductor superlattices is reviewed. In particular, we discuss the two equivalent quantum-mechanical pictures of Bloch oscillations and Wannier-Stark localization. A rev…
  arxiv Fausto Rossi 1997-11-19T09:35:15Z 置信度 0.78 cond-mat.mtrl-sci
• Device-to-Device Data Storage for Mobile Cellular Systems
  As an alternative to downloading content from a cellular access network, mobile devices could be used to store data files and distribute them through device-to-device (D2D) communication. We consider a D2D-based storage community that is comprised of mobile us…
  arxiv J. Pääkkönen, C. Hollanti, O. Tirkkonen 2013-09-24T12:01:49Z 置信度 0.78 cs.NI
• Spin relaxation of localized electrons in n-type semiconductors
  The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is sho…
  arxiv K. V. Kavokin 2008-06-29T12:33:26Z 置信度 0.78 cond-mat.mes-hallcond-mat.str-el
• Low-Rate Machine-Type Communication via Wireless Device-to-Device (D2D) Links
  Wireless cellular networks feature two emerging technological trends. The first is the direct Device-to-Device (D2D) communications, which enables direct links between the wireless devices that reutilize the cellular spectrum and radio interface. The second is…
  arxiv Nuno K. Pratas, Petar Popovski 2013-05-29T12:59:36Z 置信度 0.78 cs.ITcs.NI
• Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films
  Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin films of quaternary spi…
  arxiv Varun K. Kushwaha, Jyoti Rani, Ashwin Tulapurkar, C. V. Tomy 2017-07-17T10:28:30Z 置信度 0.78 cond-mat.mtrl-sci
• Predicting Power Electronics Device Reliability under Extreme Conditions with Machine Learning Algorithms
  Power device reliability is a major concern during operation under extreme environments, as doing so reduces the operational lifetime of any power system or sensing infrastructure. Due to a potential for system failure, devices must be experimentally validated…
  arxiv Carlos Olivares, Raziur Rahman, Christopher Stankus, Jade Hampton 等 2021-07-21T18:17:32Z 置信度 0.78 cs.LGeess.SY
• Semiconductor SEM Image Defect Classification Using Supervised and Semi-Supervised Learning with Vision Transformers
  Controlling defects in semiconductor processes is important for maintaining yield, improving production cost, and preventing time-dependent critical component failures. Electron beam-based imaging has been used as a tool to survey wafers in the line and inspec…
  arxiv Chien-Fu, Huang, Katherine Sieg, Leonid Karlinksy 等 2025-06-03T19:34:54Z 置信度 0.78 cs.CV
• On a drift-diffusion system for semiconductor devices
  In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion …
  arxiv Rafael Granero-Belinchón 2016-03-12T01:40:16Z 置信度 0.78 math.AP
• Derivation of 12- and 14-band $\textbf{k}\cdot\textbf{p}$ Hamiltonians for dilute bismide and bismide-nitride semiconductors
  Using an $sp^{3}s^{*}$ tight-binding model we demonstrate how the observed strong bowing of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide alloy GaBi$_{x}$As$_{1-x}$ can be described in terms of a band-anticrossing i…
  arxiv Christopher A. Broderick, Muhammad Usman, Eoin P. O'Reilly 2013-10-29T21:30:01Z 置信度 0.78 cond-mat.mtrl-sci
• Fully electrically read-write device out of a ferromagnetic semiconductor
  We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the st…
  arxiv S. Mark, P. Dürrenfeld, K. Pappert, L. Ebel 等 2010-12-20T07:57:40Z 置信度 0.78 cond-mat.mes-hall
• Modelling internet based applications for designing multi-device adaptive interfaces
  The wide spread of mobile devices in the consumer market has posed a number of new issues in the design of internet applications and their user interfaces. In particular, applications need to adapt their interaction modalities to different portable devices. In…
  arxiv Enrico Bertini, Giuseppe Santucci 2017-01-25T12:55:45Z 置信度 0.78 cs.HC
• Continuous Wavelet Transform and Siamese Network-Based Anomaly Detection in Multi-variate Semiconductor Process Time Series
  Semiconductor manufacturing is an extremely complex process, characterized by thousands of interdependent parameters collected across diverse tools and process steps. Multi-variate time-series (MTS) analysis has emerged as a critical methodology for enabling r…
  arxiv Bappaditya Dey, Daniel Sorensen, Minjin Hwang, Sandip Halder 2025-07-01T11:10:19Z 置信度 0.78 cs.LG
• Low-Complexity Acoustic Scene Classification with Device Information in the DCASE 2025 Challenge
  This paper presents the Low-Complexity Acoustic Scene Classification with Device Information Task of the DCASE 2025 Challenge, along with its baseline system. Continuing the focus on low-complexity models, data efficiency, and device mismatch from previous edi…
  arxiv Florian Schmid, Paul Primus, Toni Heittola, Annamaria Mesaros 等 2025-05-03T08:52:18Z 置信度 0.78 eess.AScs.SD
• Alice Meets Bob: A Comparative Usability Study of Wireless Device Pairing Methods for a "Two-User" Setting
  When users want to establish wireless communication between/among their devices, the channel has to be bootstrapped first. To prevent any malicious control of or eavesdropping over the communication, the channel is desired to be authenticated and confidential.…
  arxiv Arun Kumar, Nitesh Saxena, Ersin Uzun 2009-07-27T19:34:20Z 置信度 0.78 cs.CRcs.HC
• Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor
  Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but extraordinary quantum pro…
  arxiv Yun-Pil Shim, Charles Tahan 2013-08-30T20:01:12Z 置信度 0.78 cond-mat.mes-hallquant-ph
• Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells
  Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and time-resolved Kerr rotation in …
  arxiv G. V. Astakhov, M. M. Glazov, D. R. Yakovlev, E. A. Zhukov 等 2008-07-23T11:35:06Z 置信度 0.78 cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other
• Ferromagnetic Semiconductors and Spintronic Devices
  Ferromagnetic semiconductors play a crucial role in spintronic devices, enabling effective control of electron spin over charge. This study explores their unique properties, ongoing advancements in spin control, and potential integration into next-generation s…
  arxiv Nazmul Hasan 2024-01-31T02:42:07Z 置信度 0.78 physics.app-phcond-mat.mtrl-sci
• Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices
  Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel c…
  arxiv Adam Frees, John King Gamble, Daniel R. Ward, Robin Blume-Kohout 等 2018-06-12T04:04:09Z 置信度 0.78 cond-mat.mes-hall
• On-Device Machine Learning: An Algorithms and Learning Theory Perspective
  The predominant paradigm for using machine learning models on a device is to train a model in the cloud and perform inference using the trained model on the device. However, with increasing number of smart devices and improved hardware, there is interest in pe…
  arxiv Sauptik Dhar, Junyao Guo, Jiayi Liu, Samarth Tripathi 等 2019-11-02T01:16:02Z 置信度 0.78 cs.LGcs.DCstat.ML
• SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects
  In this paper, I present SEMIDV - a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for scripting and data analysi…
  arxiv Chien-Ting Tung 2025-03-31T20:39:28Z 置信度 0.78 cond-mat.mes-hallphysics.app-ph
• Trajectories of a droplet driven by an internal active device
  We consider a liquid droplet which is propelled solely by internal flow. In a simple model, this flow is generated by an autonomous actuator, which moves on a prescribed trajectory inside the droplet. In a biological system, the device could represent a motor,…
  arxiv Leon Rueckert, Annette Zippelius, Reiner Kree 2019-02-04T13:02:31Z 置信度 0.78 cond-mat.soft
• Ternary iron selenide K$_{0.8}$Fe$_{1.6}$Se$_2$ is an antiferromagnetic semiconductor
  We have studied electronic and magnetic structures of K$_{0.8+x}$Fe$_{1.6}$Se$_2$ by performing the first-principles electronic structure calculations. The ground state of the Fe-vacancies ordered K$_{0.8}$Fe$_{1.6}$Se$_2$ is found to be a quasi-two-dimensiona…
  arxiv Xun-Wang Yan, Miao Gao, Zhong-Yi LU, Tao Xiang 2011-02-10T20:13:52Z 置信度 0.78 cond-mat.supr-concond-mat.mtrl-scicond-mat.str-el