半导体与先进封装

10000 条实体 · 最后更新 2026-08-31T20:33:37.998Z · Chip-scale package / Flip chip / Packaging engineering / Wafer-level packaging / Fan-out / Computer science / Business / Systems engineering / Engineering / Electronic packaging / Integrated circuit packaging / Bandwidth (computing)

• Acceptor Functionalization via Green Chemistry Enables High‐Performance n‐Type Organic Electrochemical Transistors for Biosensing, Memory Applications
  Abstract The organic electrochemical transistor (OECT) is one of the most versatile building blocks within the bioelectronics device toolbox. While p‐type organic semiconductors have progressed as OECT channel materials, only a few n‐type semiconductors have b…
  openalex Yazhou Wang, Anil Koklu, Yizhou Zhong, Tianrui Chang 等 2023-07-27 置信度 0.72 Materials scienceBioelectronicsNanotechnologyTransistorOrganic electronics
• Semiconductor Device Degradation by High Amplitude Current Pulses
  This paper presents the results of a lengthy and comprehensive investigation of semiconductor device degradation from nanosecond current pulses. Topics discussed include (1) previously published literature on pulse degradation and second breakdown, (2) experim…
  openalex W. D. Brown 1972-01-01 置信度 0.72 Materials scienceNanosecondDegradation (telecommunications)Semiconductor devicePulse (music)
• Elements of semiconductor-device reliability
  Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels…
  openalex C.G. Peattie, John Adams, Steve Carrell, Tont Dan George 等 1974-01-01 置信度 0.72 Reliability (semiconductor)Reliability engineeringQuality (philosophy)Process (computing)Semiconductor device
• Semiconductor quantum dots - towards a new generation of semiconductor devices
  A short overview of the technology and physics of semiconductor quantum dots is given. Different methods of creation of quantum dots and mechanisms of carrier confinements are described. The fundamental properties of these systems are discussed including curre…
  openalex Lucjan Jacak 2000-11-01 置信度 0.72 PhysicsSemiconductorQuantum dotSemiconductor materialsNanotechnology
• Generalized reciprocity theorem for semiconductor devices
  A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional de…
  openalex Κωνσταντίνος Μισιακός, F.A. Lindholm 1985-12-15 置信度 0.72 Reciprocity (cultural anthropology)Common emitterPhysicsSemiconductorElectron
• Modeling semiconductor devices with position-dependent material parameters
  An overview of the transport model describing electron and hole motion and density in solids with position-dependent band structures is presented. This includes materials with nonuniform composition such as graded heterojunctions, and devices with highly doped…
  openalex Alan H. Marshak 1989-09-01 置信度 0.72 Band gapSemiconductorBand diagramElectronCommon emitter
• SEMICONDUCTOR NANOWIRES AND NANOTUBES
  ▪ Abstract Semiconductor nanowires and nanotubes exhibit novel electronic and optical properties owing to their unique structural one-dimensionality and possible quantum confinement effects in two dimensions. With a broad selection of compositions and band str…
  openalex Matt Law, Joshua E. Goldberger, Peidong Yang 2004-07-07 置信度 0.72 NanowireMaterials scienceNanotechnologySemiconductorHeterojunction
• Fundamentals of Carrier Transport
  Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and sol…
  openalex Mark Lundstrom 2000-10-26 置信度 0.72 Mesoscopic physicsEngineering physicsVariety (cybernetics)SemiconductorTransport phenomena
• Electroluminescence in conjugated polymers
  openalex Richard H. Friend, R. W. Gymer, Andrew B. Holmes, J. H. Burroughes 等 1999-01-14 置信度 0.72 ElectroluminescencePolymerNanotechnologyFabricationMaterials science
• Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results
  The authors present SECOND, a program for large-scale semiconductor device simulation with truly three-dimensional grids. Since 3-D simulations necessitate large computing resources, the choice of algorithms and their implementation become of utmost importance…
  openalex Gernot Heiser, C. Pommerell, Jared A. Weis, Wolf Fïchtner 1991-01-01 置信度 0.72 Computer scienceWorkstationBlock (permutation group theory)AlgorithmTransient (computer programming)
• Charge Coupled Semiconductor Devices
  openalex W. S. BOYLE, G. E. SMITH 1991-03-01 置信度 0.72 SemiconductorOptoelectronicsMaterials scienceSemiconductor deviceComputer science
• An advanced PWM-switch model including semiconductor device nonlinearities
  Contrary to the classical ideal averaged models, the introduced averaged model includes the nonlinear effects of the power semiconductor devices. The proposed nonideal pulse width modulated (PWM)-switch model is a useful method for modeling pulse width modulat…
  openalex Anis Ammous, Kaiçar Ammous, Mariem Ayedi, Y. Ounajjar 等 2003-08-27 置信度 0.72 ConvertersPulse-width modulationSemiconductor devicePower (physics)Nonlinear system
• Semiconductor Devices
  openalex Narciso Garcı́a, Arthur Damask 1991-01-01 置信度 0.72 SemiconductorSiliconDopingImpurityMaterials science
• Analysis of negative capacitance and self-heating in organic semiconductor devices
  In admittance spectroscopy of organic semiconductor devices, negative capacitance values arise at low frequency and high voltages. This study aims at explaining the influence of self-heating on the frequency-dependent capacitance and demonstrates its impact on…
  openalex Evelyne Knapp, Beat Ruhstaller 2015-04-07 置信度 0.72 CapacitanceAdmittanceNegative impedance converterSteady state (chemistry)Frequency domain
• Progress in the industrial production of SiC substrates for semiconductor devices
  openalex St.G. Müller, R Glass, H. McD. Hobgood, V. F. Tsvetkov 等 2001-03-01 置信度 0.72 WaferSublimation (psychology)Materials scienceSilicon carbideSchottky diode
• Application of Preferential Electrochemical Etching of Silicon to Semiconductor Device Technology
  Preferential electrochemical etching of epitaxial structures has been applied to the fabrication of semiconductor devices. Preparation of thin layer devices and isolated structures is described. As an introduction to these applications, the etching of various …
  openalex M. J. J. Theunissen, J.A. Appels, W. H. C. G. Verkuylen 1970-01-01 置信度 0.72 Etching (microfabrication)EpitaxyMaterials scienceSiliconFabrication
• New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
  Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed val…
  openalex K. von Klitzing, G. Dorda, M. Pepper 1980-08-11 置信度 0.72 Hall effectMaterials scienceSemiconductorSiliconVoltage
• The Effects of Unsymmetric Matrix Permutations and Scalings in Semiconductor Device and Circuit Simulation
  The solution of large sparse unsymmetric linear systems is a critical and challenging component of semiconductor device and circuit simulations. The time for a simulation is often dominated by this part. The sparse solver is expected to balance different, and …
  openalex Olaf Schenk, Stefan Röllin, Anshul Gupta 2004-03-01 置信度 0.72 SolverComputer scienceReliability (semiconductor)Memory footprintDiagonal
• Generation and annihilation of traps in metal-oxide-semiconductor devices after negative air corona charging
  Surface and bulk traps along with positive oxide charge accumulation have been found to be generated in metal-oxide-semiconductor capacitors, when subjected to negative air corona discharge at slightly reduced pressure (≂10−1 Torr). The effects are neutralized…
  openalex Ila Prasad, R. S. Srivastava 1993-07-01 置信度 0.72 OxideTorrCapacitorSemiconductorMaterials science
• Electronic Processes of Conjugated Polymers in Semiconductor Device Structures
  openalex Richard H. Friend, G. J. Denton, J.J.M. Halls, N.T. Harrison 等 1997-01-01 置信度 0.72 ElectroluminescenceLasing thresholdMaterials scienceOptoelectronicsPhotoluminescence
• Design of molecular dyes for application in photoelectrochemical and electrochromic devices based on nanocrystalline metal oxide semiconductors
  openalex Roberto Argazzi, Neyde Yukie Murakami Iha, Hervé Zabri, Fabrice Odobel 等 2004-06-09 置信度 0.72 ElectrochromismNanocrystalline materialSemiconductorChemistryNanotechnology
• Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices
  Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices, Aoyama, Takayuki, Suzuki, Kunihiro, Tashiro, Hiroko, Toda, Yoko, Yamazaki, Tatsuya, Arimoto, Yoshihiro, Ito, Takashi
  openalex Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Y. Toda 等 1993-12-01 置信度 0.72 Materials scienceBoronSiliconOxideThermal diffusivity
• Global modeling of microwave applications by combining the FDTD method and a general semiconductor device and circuit simulator
  This paper presents the coupling of two commercially available simulation codes: DESSIS-ISE, a multidimensional semiconductor device and circuit simulator, and EMLAB-ISE, an electromagnetic-field solver based on the finite-difference time-domain (FDTD) method.…
  openalex Andreas Witzig, Christian Schuster, P. Regli, Wolf Fïchtner 1999-06-01 置信度 0.72 Finite-difference time-domain methodElectronic engineeringNonlinear systemMicrowaveElectronic circuit simulation
• 2D semiconductors for specific electronic applications: from device to system
  Abstract The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials have excellent p…
  openalex Xiaohe Huang, Chunsen Liu, Peng Zhou 2022-08-01 置信度 0.72 SemiconductorHeterojunctionTransistorMaterials scienceComputer science
• A review of advanced scanning probe microscope analysis of functional films and semiconductor devices
  openalex Günther Benstetter, Roland Biberger, Dongping Liu 2009-04-24 置信度 0.72 Scanning probe microscopySpreading resistance profilingScanning capacitance microscopyKelvin probe force microscopeMaterials science
• The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
  openalex Asen Asenov, J.R. Watling, A. R. Brown, D. K. Ferry 2002-12-01 置信度 0.72 Quantum tunnellingStatistical physicsQuantumPhysicsQuantum dot
• Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices
  Polycrystalline silicon-gate metal-oxide-semiconductor (MOS) capacitors have been fabricated with high-temperature anneals from 800 to 950 °C after gate oxidation and polycrystalline silicon deposition. Temperatures from 800 to 875 °C are found to have very li…
  openalex J.R. Schwank, Daniel M. Fleetwood 1988-08-29 置信度 0.72 Polycrystalline siliconMaterials scienceSiliconAnnealing (glass)Trapping
• Determination of charge transport activation energy and injection barrier in organic semiconductor devices
  Charge carrier transport in organic semiconductor devices is thermally activated with characteristic activation energies in the range of 0.2–0.6 eV, leading to strongly temperature-dependent behaviour. For designing efficient organic semiconductor materials an…
  openalex Simon Züfle, Stéphane Altazin, Alexander Hofmann, Lars Jäger 等 2017-09-19 置信度 0.72 Organic semiconductorSemiconductorMaterials scienceOptoelectronicsActivation energy
• Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
  openalex Massimo Gurioli, Zhiming Wang, Armando Rastelli, Takashi Kuroda 等 2019-05-13 置信度 0.72 Semiconductor nanostructuresMaterials sciencePhotonicsSemiconductorEpitaxy
• Semiconductor nanowire devices
  openalex Oliver Hayden, Ritesh Agarwal, Wei Lü 2008-10-01 置信度 0.72 NanowireNanotechnologyMaterials scienceSemiconductorFabrication
• On a Drift–Diffusion System for Semiconductor Devices
  openalex Rafael Granero-Belinchón 2016-04-29 置信度 0.72 Sobolev spaceNernst equationSemiconductorPoisson distributionDiffusion
• Iterative versus direct parallel substructuring methods in semiconductor device modelling
  The numerical simulation of semiconductor devices is extremely demanding in term of computational time because it involves complex embedded numerical schemes. At the kernel of these schemes is the solution of very ill-conditioned large linear systems. In this …
  openalex Luc Giraud, A. Marrocco, J.-C. Rioual 2004-06-17 置信度 0.72 Robustness (evolution)Iterative methodLinear systemComputer scienceKernel (algebra)
• Application of finite element methods to the simulation of semiconductor devices
  In this paper a survey is presented of the use of finite element methods for the simulation of the behaviour of semiconductor devices. Both ordinary and mixed finite element methods are considered. We indicate how the various mathematical models of semiconduct…
  openalex John J. H. Miller, W.H.A. Schilders, Song Wang 1999-01-01 置信度 0.72 Finite element methodMixed finite element methodApplied mathematicsPhysicsNonlinear system
• Physical Simulation of Optoelectronic Semiconductor Devices
  openalex D.W. Winston 1996-01-01 置信度 0.72 OptoelectronicsSemiconductorSemiconductor laser theorySemiconductor deviceMaterials science
• Thermal stress and fracture in shear-constrained semiconductor device structures
  The construction of semiconductor devices, as well as other electron devices, often requires the utilization of brittle materials, such as the semiconductor itself, as part of a larger structure. Thermal stress, caused by cooling from high temperature bonding …
  openalex T.C. Taylor, Fei Yuan 1962-05-01 置信度 0.72 Materials scienceStructural engineeringShear stressSemiconductorStress (linguistics)
• Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
  Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were us…
  openalex Yi Cui, Charles M. Lieber 2001-02-02 置信度 0.72 NanowireMaterials scienceNanotechnologySemiconductorNanoscopic scale
• Nanoscale semiconductor devices as new biomaterials
  Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics…
  openalex John F. Zimmerman, Ramya Parameswaran, Bozhi Tian 2014-01-01 置信度 0.72 NanotechnologyNanoscopic scaleSemiconductorMaterials scienceOptoelectronics
• Microlithography Fundamentals in Semiconductor Devices and Fabrication Technology
  "Explores the science and technology of lithographic processes and resist materials and summarizes the most recent innovations in semiconductor manufacturing. Considers future trends in lithography and resist material technology. Reviews the interaction of lig…
  openalex Saburo Nonogaki, Ueno Takumi, Toshio Ito 2018-05-16 置信度 0.72 FabricationSemiconductorOptoelectronicsMaterials scienceEngineering physics
• Feasibility Study of Mechanical Stress Wave Detection in Power Semiconductor Devices Using Bare FBG Sensors
  Power semiconductor devices generate mechanical stress wave (MSW) signals during switching processes, which can be used for condition monitoring (CM) of these devices with the advantages of noninvasive and non-destructive monitoring. Existing MSW signal detect…
  openalex Yunze He, Man Yuan, Qiying Li, Longhai Tang 等 2025-10-02 置信度 0.72 Electromagnetic interferenceFiber Bragg gratingMaterials scienceInterference (communication)Semiconductor device
• Roadmap on organic–inorganic hybrid perovskite semiconductors and devices
  Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various op…
  openalex Lukas Schmidt‐Mende, Vladimir Dyakonov, Selina Olthof, Feray Ünlü 等 2021-10-01 置信度 0.72 Perovskite (structure)Materials scienceSemiconductorEngineering physicsNanotechnology
• Single-layer MoS2 transistors
  openalex Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio, Valentina Giacometti 等 2011-01-30 置信度 0.72 Materials scienceGrapheneOptoelectronicsBand gapTransistor
• A systematic approach to modeling of power semiconductor devices based on charge control principles
  The charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models. This method represents a systematic technique for constructing models for power electronic …
  openalex Chao Ma, P.O. Lauritzen, Pao-Yi Lin, I. Budihardjo 等 2002-12-17 置信度 0.72 Charge (physics)Computer scienceCharge controlPower (physics)Simple (philosophy)
• Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information
  Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices.…
  openalex Ke Ma, Amir Sajjad Bahman, Szymon Bęczkowski, Frede Blaabjerg 2014-08-27 置信度 0.72 Semiconductor devicePower semiconductor deviceReliability engineeringPower (physics)Semiconductor
• A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices
  openalex Sylvain Pietranico, Stéphane Lefebvre, Sylvie Pommier, M. Berkani Bouaroudj 等 2011-07-24 置信度 0.72 Materials scienceDegradation (telecommunications)AluminiumSemiconductorTransistor
• Semiconductor spintronics
  Semiconductor spintronics Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are …
  openalex Jaroslav Fabian, Alex Matos-Abiague, Christian Ertler, Peter Stano 等 2007-08-01 置信度 0.72 SpintronicsSpin transistorSpin engineeringSpinplasmonicsSpin pumping
• A Procedure for Cross Sectioning Specific Semiconductor Devices for Both SEM and TEM Analysis
  openalex J. Benedict, Ron Anderson, Stanley J. Klepeis, Mohamed Chaker 1990-01-01 置信度 0.72 Materials sciencePolishingIon milling machineSemiconductorSample preparation
• Review of SiC based Power Semiconductor Devices and their Applications
  Silicon based Power Semiconductor Devices are extensively used in power electronic applications for the last few decades. Recent developments in power electronics require devices with high power rating, switching frequency and operating temperature but silicon…
  openalex Raksha Adappa, K. Suryanarayana, H. Swathi Hatwar, M. Ravikiran Rao 2019-07-01 置信度 0.72 Silicon carbideWide-bandgap semiconductorSemiconductorMaterials scienceSilicon
• Instability in electrical performance of organic semiconductor devices
  Abstract A field effect transistor (FET) has been fabricated with the hexamer of thiophene (α‐sexithienyl) in order to assess the performance of such electronic devices based on an organic material. Particular emphasis has been given to the determination of th…
  openalex P. Ostoja, S. Guerri, M. Impronta, P. Zabberoni 等 1992-06-01 置信度 0.72 Organic semiconductorMaterials scienceElectric fieldInstabilityField-effect transistor
• Characterization and comparison of 1.2 kV SiC power semiconductor devices
  This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET. Both commercial and sample devices from the semiconductor industry's well…
  openalex Christina DiMarino, Zheng Chen, Dushan Boroyevich, Rolando Burgos 等 2013-09-01 置信度 0.72 Characterization (materials science)Materials scienceSemiconductorOptoelectronicsSilicon carbide
• Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
  The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the b…
  openalex Rohit Galatage, D. M. Zhernokletov, Hong Dong, Barry Brennan 等 2014-07-07 置信度 0.72 CapacitanceDielectricMaterials scienceSemiconductorDispersion (optics)
• Computer-aided thermal analysis of power semiconductor devices
  Thermal analysis of power semiconductor devices is often complicated by odd geometries and the nonlinear properties of materials. It is the type of problem that can best be handled by a computer. Fortunately, numerous general-purpose heat transfer programs hav…
  openalex F. Wenthen 1970-09-01 置信度 0.72 Computer scienceConvergence (economics)Nonlinear systemSemiconductor deviceAcceleration
• Two-dimensional perovskite heterostructures for single crystal semiconductor devices
  Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals…
  openalex Jee Yung Park, Yoon Ho Lee, Hyojung Kim, Letian Dou 2023-08-08 置信度 0.72 HeterojunctionMaterials sciencePerovskite (structure)Semiconductorvan der Waals force
• A simple method for evaluating the transient thermal response of semiconductor devices
  openalex N.Y.A. Shammas, M.P. Rodriguez, F.N. Masana 2002-01-01 置信度 0.72 Transient (computer programming)Time constantThermalTransient responseExponential function
• Semiconductor device physics
  openalex 1962-08-01 置信度 0.72 SemiconductorPhysicsEngineering physicsMaterials scienceOptoelectronics
• Performance of a parallel algebraic multilevel preconditioner for stabilized finite element semiconductor device modeling
  openalex Paul Lin, John N. Shadid, Marzio Sala, Raymond S. Tuminaro 等 2009-05-22 置信度 0.72 PreconditionerSolverGeneralized minimal residual methodMultigrid methodFinite element method
• GaInAsP alloy semiconductors
  Provides an in-depth introduction to the growth, characterization, and device technology of the GaInAsP conductor, the cornerstone of the optical fibre telecommunications industry. Includes a comprehensive treatment of all known crystal growth methods. Relates…
  openalex T. P. Pearsall 1982-01-01 置信度 0.72 SemiconductorMaterials scienceOptoelectronicsCornerstoneCharacterization (materials science)
• Semiconductor device simulation using adaptive refinement and flux upwinding
  An adaptive mesh refinement scheme and dynamic data structure were developed in conjunction with a flux-upwind Petrov-Galerkin finite-element formulation for analysis of semiconductor device equations. The electrostatic potential equation and carrier-current c…
  openalex Mukul M. Sharma, Graham F. Carey 1989-06-01 置信度 0.72 Upwind schemeAdaptive mesh refinementPetrov–Galerkin methodFinite element methodComputer science
• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
  ldquoConventionalrdquo techniques and related capacitance-voltage characteristic interpretation were established to evaluate interface trap density on Si substrates. We show that blindly applying these techniques on alternative substrates can lead to incorrect…
  openalex Koen Martens, Chi On Chui, Guy Brammertz, Brice De Jaeger 等 2008-01-25 置信度 0.72 Trap (plumbing)CapacitanceConductanceInterface (matter)Semiconductor
• Semiconductor Optoelectronic Devices
  openalex 2003-01-01 置信度 0.72 OptoelectronicsSemiconductorMaterials scienceSemiconductor deviceNanotechnology
• Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering
  Semiconductor nanocrystals are tiny light-emitting particles on the nanometer scale. Researchers have studied these particles intensely and have developed them for broad applications in solar energy conversion, optoelectronic devices, molecular and cellular im…
  openalex Andrew M. Smith, Shuming Nie 2009-10-14 置信度 0.72 SemiconductorMaterials scienceNanocrystalCharge carrierOptoelectronics
• Local Hall effect in hybrid ferromagnetic/semiconductor devices
  The authors have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resis…
  openalex Jinki Hong, Sungjung Joo, Tae-Suk Kim, Kungwon Rhie 等 2007-01-08 置信度 0.72 MagnetoresistanceSpintronicsCondensed matter physicsFerromagnetismHall effect
• Ion Implantation in Semiconductors
  openalex James W. Mayer, O. J. Marsh 1969-01-01 置信度 0.72 Ion implantationMaterials scienceSiliconOptoelectronicsSemiconductor
• Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices
  Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered struc…
  openalex Tatsuo Suzuki 2015-11-23 置信度 0.72 MonolayerGroup (periodic table)SemiconductorCrystallographyAtom (system on chip)
• Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations
  openalex Fabrizio Bonani, Giovanni Ghione 1999-02-01 置信度 0.72 Noise (video)PhysicsComputational physicsSemiconductorStatistical physics
• Electronics using hybrid-molecular and mono-molecular devices
  openalex Christian Joachim, James K. Gimzewski, Ari Aviram 2000-11-01 置信度 0.72 RectificationElectronicsMolecular electronicsMicroelectronicsMiniaturization
• Cosmic ray induced failures in high power semiconductor devices
  openalex H. R. Zeller 1997-10-01 置信度 0.72 Insulated-gate bipolar transistorFailure rateThyristorDramDiode
• A comprehensive transport model for semiconductor device simulation
  In this paper a comprehensive carrier dynamical transport model for semiconductor device simulation is presented. The model consists of carrier, carrier momentum and carrier energy conservation relations derived using a perturbation solution for the carrier di…
  openalex Colin C. McAndrew, E.L. Heasell, K. Singhal 1987-10-01 置信度 0.72 SemiconductorDegenerate energy levelsDegeneracy (biology)Distribution functionPhysics
• Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
  We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher-k ALD-TiO2 gate dielectric. An ALD-Al2O3 IL of ∼1 nm thickness reduces the gate l…
  openalex Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima, Paul C. McIntyre 2010-02-22 置信度 0.72 Materials scienceAtomic layer depositionCapacitorPassivationCapacitance
• Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices
  We investigate a new type of magnetoresistance (MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagnetic grating defined on the surface of the device. We observe an increase in …
  openalex N. Overend, Alain Nogaret, B. L. Gallagher, P. C. Main 等 1998-04-06 置信度 0.72 MagnetoresistanceCondensed matter physicsFerromagnetismMaterials scienceElectrical resistivity and conductivity
• Bias temperature instability in SiC metal oxide semiconductor devices
  Abstract Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC MOSFET and V fb in MOS capacitor after the device is operated a…
  openalex Chao Yang, Shengsheng Wei, Dejun Wang 2020-11-24 置信度 0.72 InstabilityMaterials scienceSemiconductorOxideMetal
• A Bifurcation Analysis of the One-Dimensional Steady-State Semiconductor Device Equations
  This paper considers the one-dimensional steady-state semiconductor device equations modeling a thyristor. These equations can be considered as a singularly perturbed boundary value problem. The reduced problem is considered in order to derive an approximation…
  openalex Herbert Steinrück 1989-08-01 置信度 0.72 BifurcationSteady state (chemistry)MathematicsCurrent (fluid)Mathematical analysis
• The potential of III‐V semiconductors as terrestrial photovoltaic devices
  Abstract III‐V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal cand…
  openalex Matteo Bosi, C. Pelosi 2006-06-19 置信度 0.72 Photovoltaic systemOptoelectronicsEngineering physicsSemiconductorSolar cell
• A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors
  A surface passivation method for , with possible extensions to and , is proposed. For , a correlation between recent device work (on solar cells, field effect transistors, MOS devices, and photodiodes) and the experimental Ga‐As‐O phase diagram provides strong…
  openalex F. Capasso, Graeme Williams 1982-04-01 置信度 0.72 PassivationOptoelectronicsMaterials sciencePhotodiodePhotodetector
• Deposition techniques for dielectric films on semiconductor devices
  Techniques for forming dielectric layers for fabricating semiconductor components are reviewed, including (1) low-pressure techniques: evaporation, sputtering, plasma deposition, and low-pressure CVD, (2) techniques operating at one atmosphere total pressure: …
  openalex J. A. Amick, G.L. Schnable, John L. Vossen 1977-09-01 置信度 0.72 Materials scienceSemiconductorSiliconChemical vapor depositionSputtering
• Recent developments in compact ultrafast lasers
  openalex U. Keller 2003-08-01 置信度 0.72 Ultrashort pulseLaserFemtosecondPicosecondOptoelectronics
• GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation
  Oxides induced Fermi level pinning at the interface between the GaAs and high-k gate dielectric is a major obstacle for developing high performance GaAs metal-oxide-semiconductor (MOS) devices. In this letter, thermal nitridation treatment on GaAs surface prio…
  openalex Fei Gao, S. J. Lee, D. Z., S. Balakumar 等 2007-06-18 置信度 0.72 Materials sciencePassivationOptoelectronicsDielectricMetal gate
• Thermal transient characterization of semiconductor devices with multiple heat sources—Fundamentals for a new thermal standard
  openalex Dirk Schweitzer, Ferenc Ender, Gusztáv Hantos, Péter G. Szabó 2014-12-20 置信度 0.72 Thermal resistanceTransient (computer programming)ThermalSemiconductorCharacterization (materials science)
• Semiconductor sheets for the manufacture of semiconductor devices
  The temperature distribution in a supercooled melt is qualitatively described. Properly shaped heat shields are shown to overcome parasitic wall growth and thermal shock, besides being an additional means of controlling thermal conditions. Using such a setup, …
  openalex S. N. Dermatis, J. W. Faust 1963-03-01 置信度 0.72 Materials scienceSemiconductorThermal shockDislocationThermal
• Metal electrode effects on spin-orbital coupling and magnetoresistance in organic semiconductor devices
  This letter reports the modifications of spin-orbital coupling and magnetoresistance of conjugated polymer upon deposition of metal electrode based on organic light-emitting diodes of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]. We find that the…
  openalex Yue Wu, Bin Hu 2006-11-13 置信度 0.72 MagnetoresistanceElectroluminescenceMaterials scienceOrganic semiconductorElectrode
• Integrated Optoelectronic Devices Based on Conjugated Polymers
  An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance a…
  openalex Henning Sirringhaus, Nir Tessler, Richard H. Friend 1998-06-12 置信度 0.72 Materials scienceOptoelectronicsPolymerPolaronTransistor
• A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation
  The paper presents a novel, unified technique to evaluate, through physics-based modeling, the frequency conversion and noise behavior of semiconductor devices operating in the large-signal periodic regime. Starting from the harmonic balance (HE) solution of t…
  openalex Fabrizio Bonani, Simona Donati Guerrieri, Giovanni Ghione, Marco Pirola 2001-05-01 置信度 0.72 Noise (video)Harmonic balanceSIGNAL (programming language)DiscretizationElectronic engineering
• Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication
  openalex Dae Sik Kim, Jae Bin Kim, Da Won Ahn, Jin Hyun Choe 等 2023-03-11 置信度 0.72 Materials scienceAtomic layer depositionSemiconductorEtching (microfabrication)Nanotechnology
• Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures
  openalex A. C. Twitchett-Harrison, Timothy Yates, Rafal E. Dunin‐Borkowski, Paul A. Midgley 2008-06-26 置信度 0.72 Electron holographyMaterials scienceHolographySemiconductorTilt (camera)
• Mesoscopic coherence phenomena in semiconductor devices
  Semiconductor devices have several attractive properties which make them useful in the study of electronic coherence phenomena such as universal conductance fluctuations. The use of gated devices allows the Fermi level, and thus the electronic wavelength, to b…
  openalex Steven B. Kaplan, A. Hartstein 1988-05-01 置信度 0.72 Mesoscopic physicsConductanceCondensed matter physicsCoherence (philosophical gambling strategy)Physics
• Semiconductor Devices
  openalex 2000-08-23 置信度 0.72 Materials scienceSemiconductorOptoelectronics
• Synthesis and device characterisation of side-chain polymer electron transport materials for organic semiconductor applications
  Improved syntheses and polymerisations are reported of monomers bearing electron transporting substituents based on 2,5-diphenyloxadiazole and 2,3-diphenylquinoxaline attached directly to a vinyl group. By copolymerisation and by use of mixtures of homopolymer…
  openalex S. Dailey, W. J. Feast, R.J. Peace, I. Sage 等 2001-01-01 置信度 0.72 TriphenylamineMaterials sciencePolymerQuinoxalineMonomer
• Iterative methods in semiconductor device simulation
  openalex Randolph E. Bank, W.M. Coughran, Michael A. Driscoll, Randall K. Smith 等 1989-05-01 置信度 0.72 DiscretizationKrylov subspaceComputer scienceBlock (permutation group theory)Graph
• Cooling Systems of Power Semiconductor Devices—A Review
  In this paper, a detailed review of contemporary cooling systems of semiconductor devices is presented. The construction and the principles of operation of selected components of passive and active cooling systems, as well as selected computer tools supporting…
  openalex Krzysztof Górecki, Krzysztof Posobkiewicz 2022-06-22 置信度 0.72 Water coolingPower semiconductor deviceThermal resistanceSemiconductor deviceMOSFET
• Hybrid ferromagnet–semiconductor devices
  Novel magnetoelectronic devices for application as nonvolatile memory cells, logic gates, or magnetic field sensors are based on a bilayer structure comprised of a high mobility semiconducting Hall cross and a single, electrically isolated, microstructured fer…
  openalex Mark Johnson 1998-05-01 置信度 0.72 Materials scienceOptoelectronicsFerromagnetismMagnetic force microscopeSemiconductor
• A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices
  The authors present a computationally efficient unified approach to the numerical simulation of sensitivity and noise in majority-carrier semiconductor devices that is based on the extension to device simulation of the adjoint method for sensitivity and noise …
  openalex Giovanni Ghione, F. Filicori 1993-03-01 置信度 0.72 Sensitivity (control systems)Noise (video)DiscretizationComputer scienceFunction (biology)
• Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
  This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators an…
  openalex T. D. Moustakas, Roberto Paiella 2017-06-26 置信度 0.72 OptoelectronicsLight-emitting diodeTerahertz radiationHeterojunctionDiode
• Power semiconductor devices
  openalex B.K. Bose 2020-12-16 置信度 0.72 Power (physics)SemiconductorElectrical engineeringMaterials scienceOptoelectronics
• Pulsed anodic oxides for III-V semiconductor device fabrication
  A simple procedure for the rapid formation of uniform native oxides on various III-V semiconductor materials is described. A pulsed applied potential drives an anodic oxide formation process on the semiconductor immersed in a glycol:water:acid solution. Unifor…
  openalex Michael Grove, David Hudson, P.S. Zory, R. J. Dalby 等 1994-07-01 置信度 0.72 Materials scienceSemiconductorDiodeAnodeOptoelectronics
• Modeling of electron-hole scattering in semiconductor devices
  It is generally assumed in device modeling that the effects of electron-hole scattering can be fully accounted for by a suitable reduction in the electron and hole mobilities with injection level, without modifying the semiconductor device equations themselves…
  openalex D.E. Kane, R.M. Swanson 1993-01-01 置信度 0.72 Ambipolar diffusionElectron mobilityElectronScatteringDiffusion
• Van der Waals heterostructures and devices
  openalex Yuan Liu, Nathan O. Weiss, Xidong Duan, Xidong Duan 等 2016-07-12 置信度 0.72 van der Waals forceHeterojunctionMaterials scienceDangling bondElectronics
• Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits
  openalex Denis Flandre 1995-01-01 置信度 0.72 Silicon on insulatorElectronic circuitCMOSMaterials scienceSemiconductor
• The history of chemically sensitive semiconductor devices
  openalex P. Bergveld, Ν. F. de Rooij 1981-01-01 置信度 0.72 Chemical sensorChemical stateBiological systemChemical speciesSIGNAL (programming language)
• Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric
  A surface passivation method to improve the film quality of HfO2 gate dielectric on Ge substrate by using ultrathin AlNx layer is reported. Results show that the AlNx passivation layer is more effective in suppressing the GeOx formation at the HfO2∕Ge interfac…
  openalex Fei Gao, S. J. Lee, Jisheng Pan, Lei Tang 等 2005-03-04 置信度 0.72 PassivationMaterials scienceOptoelectronicsDielectricLayer (electronics)
• DEVSIM: A TCAD Semiconductor Device Simulator
  DEVSIM is technology computer-aided design (TCAD) software for semiconductor device simulation. By solving the equations for electric fields and current flow, it simulates the electrical behavior of semiconductor devices, such as transistors. It can be used to…
  openalex Juan Sánchez 2022-02-15 置信度 0.72 Semiconductor deviceSimulationComputer scienceSemiconductorMaterials science
• Electrostatic Discharge Failures of Semiconductor Devices
  ESD (Electrostatic Discharge) is a significant cause of device failures at all stages of device and equipment production, assembly, test, installation and field use. Even though device designs include protection circuitry, it is relatively easy to generate sta…
  openalex B. A. Unger 1981-04-01 置信度 0.72 Electrostatic dischargeCharge (physics)Semiconductor deviceCapacitorElectrical engineering
• Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells
  Device modeling of CH3NH3PbI3−xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefor…
  openalex Takashi Minemoto, Masashi Murata 2014-08-04 置信度 0.72 Perovskite (structure)Materials scienceSolar cellOptoelectronicsSemiconductor
• Conditioning of the Steady State Semiconductor Device Problem
  When solving numerically the steady state semiconductor device problem using appropriate discretizations, extremely large condition numbers are often encountered for the linearized discrete device problem. These condition numbers are so large that, if they rep…
  openalex Uri M. Ascher, Peter A. Markowich, Christian Schmeiser, Herbert Steinrück 等 1989-02-01 置信度 0.72 ScalingMathematicsSteady state (chemistry)ConditioningStability (learning theory)
• Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT
  The photovoltaic and photocatalytic systems generally use at least one semiconductor in their architecture which role is to absorb the light or to transport the charge carriers. Despite the large variety of working principles encountered in these systems, they…
  openalex Tangui Le Bahers, Michel Rérat, Philippe Sautet 2014-02-28 置信度 0.72 SemiconductorBand gapCharge carrierMaterials scienceDensity functional theory
• Recent Trends in Novel Semiconductor Devices
  openalex Archana Pandey 2022-01-28 置信度 0.72 Materials scienceSubthreshold conductionTransistorSemiconductorSemiconductor device
• Active terahertz metamaterial devices
  openalex Hou‐Tong Chen, Willie J. Padilla, Joshua M. O. Zide, A. C. Gossard 等 2006-11-01 置信度 0.72 Terahertz radiationMetamaterialOptoelectronicsTerahertz gapDetector
• Device modeling and simulations toward sub-10 nm semiconductor devices
  This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated …
  openalex Nobuyuki Sano, Akira Hiroki, K. Matsuzawa 2002-03-01 置信度 0.72 Semiconductor deviceField-effect transistorSemiconductorMOSFETTransistor
• Small Molecule Organic Semiconductors on the Move: Promises for Future Solar Energy Technology
  This article is written from an organic chemist's point of view and provides an up-to-date review about organic solar cells based on small molecules or oligomers as absorbers and in detail deals with devices that incorporate planar-heterojunctions (PHJ) and bu…
  openalex Amaresh Mishra, Peter Bäuerle 2012-02-17 置信度 0.72 Organic solar cellCommercializationOrganic semiconductorNanotechnologyMaterials science
• The properties, physics, and design of semiconductor devices
  openalex John N. Shive 1959-01-01 置信度 0.72 SemiconductorEngineering physicsPhysicsNanotechnologyMaterials science
• Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension
  The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effe…
  openalex Philip Calado, Ilario Gelmetti, Benjamin Hilton, Mohammed Azzouzi 等 2022-05-25 置信度 0.72 SemiconductorMaterials scienceOptoelectronicsIonic bondingCharge carrier
• Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications
  In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal…
  openalex Hongfang Wang, Fred Wang, Junhong Zhang 2008-01-01 置信度 0.72 Figure of meritPower densityPower semiconductor devicePower (physics)Power module
• Characterization of Low-Temperature Sintered Nanoscale Silver Paste for Attaching Semiconductor Devices
  Attachment of semiconductor devices to a package substrate is essential for providing electrical and structural connections as well as a heat dissipation path. The die-attach materials play a vital role in ensuring the system performance and reliability. As th…
  openalex John G. Bai, Z. Zhang, Jesus N. Calata, G-q. Lu 2005-06-01 置信度 0.72 Materials scienceSubstrate (aquarium)Die (integrated circuit)ResistorSilver Nano
• Wide Band Gap Semiconductor Devices for Power Electronic Converters
  Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology. However, Si is reaching its …
  openalex S M Sajjad Hossain Rafin, Roni Ahmed, Osama A. Mohammed 2023-02-01 置信度 0.72 Silicon carbideWide-bandgap semiconductorPower semiconductor deviceGallium nitrideMaterials science
• Semiconductor Devices
  openalex 1958-10-01 置信度 0.72 SemiconductorMaterials scienceOptoelectronicsEngineering physicsPhysics
• Thermal characterizations of Cu nanoparticle joints for power semiconductor devices
  openalex Toshitaka Ishizaki, Toshikazu Satoh, A. Kuno, A. Tane 等 2013-09-01 置信度 0.72 SemiconductorNanoparticleMaterials scienceThermalPower (physics)
• Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
  openalex Jialin Yang, Kewei Liu, Xing Chen, Dezhen Shen 2022-05-01 置信度 0.72 OptoelectronicsMicroelectronicsMaterials scienceSemiconductorWide-bandgap semiconductor
• Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device
  Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd∕Si metal–oxide–semiconductor structure. The SiO2:Gd active layer is prepared by thermal oxidation followed by Gd+ implantation and …
  openalex Jiaming Sun, W. Skorupa, T. Dekorsy, M. Helm 等 2004-10-18 置信度 0.72 ElectroluminescenceMaterials scienceOptoelectronicsUltravioletOxide
• Spin-valve effects in a semiconductor field-effect transistor: A spintronic device
  We present a spintronic semiconductor field-effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to ea…
  openalex S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield 等 1999-09-15 置信度 0.72 SpintronicsPermalloyAntiparallel (mathematics)Condensed matter physicsSpin valve
• High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices
  openalex Woo Sik Jeon, Jung Soo Park, Ling Li, Dae Chul Lim 等 2012-03-03 置信度 0.72 OptoelectronicsThermal conductionElectron mobilityOrganic semiconductorSpace charge
• Noise in Semiconductor Devices
  Noise is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. Thermal noise is created by random motion of charge carriers due to thermal excitation. This noise…
  openalex Alicja Konczakowska, Bogdan M. Wilamowski 2018-10-03 置信度 0.72 Noise (video)Computer scienceSemiconductorAcousticsElectrical engineering
• An improved asymmetrical multilevel inverter topology with reduced semiconductor device count
  Background Multilevel Inverters have become a viable alternative to two-level inverters because of their superior power quality, however, the increase in number of switches with their corresponding voltage stress, and dc voltage sources are the major factors f…
  openalex Zeeshan Sarwer, Marif Daula Siddique, Atif Iqbal, Adil Sarwar 等 2020-09-07 置信度 0.72 Topology (electrical circuits)Total harmonic distortionMATLABVoltageInverter
• Understanding FACTS: Concepts and Technology of Flexible AC Transmission Systems
  "The Flexible AC Transmission System (FACTS) -- a new technology based on power electronics -- offers an opportunity to enhance controllability, stability, and power transfer capability of AC transmission systems. Pioneers in FACTS and leading world experts in…
  openalex N.G. Hingorani, Laszlo Gyugyi 1999-12-24 置信度 0.72 Transmission (telecommunications)Computer scienceTelecommunications
• Semiconductor Devices
  openalex Narciso Garcı́a, Arthur Damask, Steven Schwarz 1998-01-01 置信度 0.72 SemiconductorSiliconDopingMaterials scienceImpurity
• Electron bombarded semiconductor devices
  The first electron bombarded semiconductor (EBS) devices have recently appeared on the market. These devices have already demonstrated that EBS has considerable promise as an important new electron device for power amplification and control. EBS devices are de…
  openalex A. Silzars, D.J. Bates, A. Ballonoff 1974-01-01 置信度 0.72 Semiconductor deviceReliability (semiconductor)Power semiconductor deviceSemiconductorPower (physics)
• Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
  openalex Markus Kantner, Thomas Koprucki 2016-11-23 置信度 0.72 SemiconductorComputer simulationDiodeNonlinear systemDiffusion
• Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
  Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequen…
  openalex Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng 等 2023-11-08 置信度 0.72 Materials scienceOptoelectronicsGallium nitrideThermal resistanceTransistor
• Finite difference method and analysis for three-dimensional semiconductor device of heat conduction
  The mathematical model of the three-dimensional semiconductor devices of heat conduction is described by a system of four quasilinear partial differential equations for initial boundary value problem. One equation in elliptic form is for the electric potential…
  openalex Yirang Yuan 1996-01-01 置信度 0.72 Thermal conductionMathematicsBoundary value problemMathematical analysisPartial differential equation
• Industrial application of atom probe tomography to semiconductor devices
  openalex A. Devin Giddings, Sebastian Koelling, Yasuo Shimizu, Robert Estivill 等 2017-11-15 置信度 0.72 Semiconductor industryAtom probeSemiconductorMetrologyMaterials science
• On the nature of ballistic transport in short-channel semiconductor devices
  Criteria for true ballistic transport as opposed to space-charge limited transport are discussed with particular emphasis on device characteristics.
  openalex John R. Barker, D. K. Ferry, H. L. Grubin 1980-10-01 置信度 0.72 Ballistic conductionSpace chargeSemiconductor deviceSemiconductorChannel (broadcasting)
• wo-dimensional finite element simulation of semiconductor devices
  Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.
  openalex J.J. Barnes, R.J. Lomax 1974-08-08 置信度 0.72 Finite element methodSemiconductor deviceSemiconductorMaterials scienceElectronic engineering
• Theory of ion beam induced charge measurement in semiconductor devices based on the Gunn's theorem
  openalex E. Vittone 2004-02-21 置信度 0.72 SemiconductorSpace chargeSchottky diodeDiodeDepletion region
• Fabrication of vapor-deposited micro heat pipe arrays as an integral part of semiconductor devices
  Vapor-deposited micro heat pipe arrays (VDMHP) were fabricated as an integral part of semiconductor devices to act as efficient heat spreaders by reducing the thermal path between the heat sources and heat sink. Fabrication of the VDMHP was accomplished by fir…
  openalex A. K. Mallik, G. P. Peterson, M.H. Weichold 1995-01-01 置信度 0.72 FabricationSemiconductorMaterials scienceHeat pipeOptoelectronics
• Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
  openalex Yuan Liu, Jian Guo, Enbo Zhu, Lei Liao 等 2018-05-01 置信度 0.72 Schottky barrierSemiconductorWork functionMaterials sciencevan der Waals force
• Magnetoresistance and Spin Transport in Organic Semiconductor Devices
  The study of electron-spin transport through nonmagnetic spacer materials sandwiched in between ferromagnetic electrodes is an extremely active eld, because of the rich physics involved and the important applications in the area of magnetic sensors.1 If the sp…
  openalex M. Wohlgenannt, P. A. Bobbert, B. Koopmans, F. Bloom 2010-04-09 置信度 0.72 MagnetoresistanceOrganic semiconductorCondensed matter physicsSemiconductorMaterials science
• Organic Semiconductors and their Applications in Photovoltaic Devices
  In recent years, organic semiconductors have emerged as a promising and, in some situations, viable commercial alternative to traditional inorganic materials such as silicon. Organic-based light emitting diodes, photovoltaic devices, photodetectors, and transi…
  openalex Jason D. Myers, Jiangeng Xue 2012-01-01 置信度 0.72 Materials sciencePhotovoltaic systemOrganic semiconductorSemiconductorNanotechnology
• Semiconductor devices for all-optical signal processing
  All-optical signal processing has been made practical by the use of semiconductor optical amplifier (SOA) devices to realise integrated all-optical switching gates. Recent advances in SOA based devices and their performance is described. (4 pages)
  openalex A. Poustie 2005-01-01 置信度 0.72 Optical amplifierOptical transistorSignal processingOptical switchComputer science
• Fast thermal profiling of power semiconductor devices using Fourier techniques
  Accurate prediction of temperature variation of power semiconductor devices in power electronic circuits is important to obtain optimum designs and estimate reliability levels. Temperature estimation of power electronic devices has generally been performed usi…
  openalex Jody J. Nelson, Giri Venkataramanan, Ayman El‐Refaie 2006-04-01 置信度 0.72 SpiceSemiconductor deviceElectronic engineeringElectronic circuitComputer science
• Handbook of Nitride Semiconductors and Devices
  openalex H. Morkoç̌ 2008-10-22 置信度 0.72 SemiconductorMaterials scienceNitrideOptoelectronicsEngineering physics
• 11. Semiconductor devices
  openalex 2014-06-12 置信度 0.72 SemiconductorMaterials scienceOptoelectronics
• Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
  Improvement in electrical properties of thermally grown GeO2/Ge metal-oxide-semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (VFB) shift, small hysteresis, and minimized minority carrier response in capacitance-voltage (C-V) chara…
  openalex Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito 等 2009-05-18 置信度 0.72 Materials scienceAnnealing (glass)CapacitorCapacitanceOptoelectronics
• High electric field approximation to charge transport in semiconductor devices
  openalex P. Dmitruk, Andrés Saúl, Luis G. Reyna 1992-05-01 置信度 0.72 Boltzmann equationElectric fieldScatteringSemiconductorElectron
• Dielectric Materials in Semiconductor Devices
  Dielectric films are used extensively in semiconductor technology for masking against the diffusion of dopants into semiconductors, fabrication of active and passive components, electrical isolation between components, and surface passivation of devices. Silic…
  openalex T. L. Chu 1969-01-01 置信度 0.72 Materials scienceDielectricPassivationSiliconDopant
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
  With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portio…
  openalex Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks 等 2014-01-29 置信度 0.72 Materials scienceTransition metalNanotechnologyEngineering physicsOptoelectronics
• Quantum Transport in Semiconductor Nanostructures
  openalex C. W. J. Beenakker, H. van Houten 1991-01-01 置信度 0.72 Condensed matter physicsQuantum tunnellingBallistic conductionQuantum Hall effectQuantum point contact
• Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
  The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electric…
  openalex Takahiro Yamada, Joyo Ito, Ryohei Asahara, K. Watanabe 等 2017-06-26 置信度 0.72 Materials scienceOptoelectronicsCapacitorOxideSputtering
• Parasitic Inductance Effects on the Switching Loss Measurement of Power Semiconductor Devices
  This paper gives the detailed analysis of the parasitic inductance effects on the switching loss measurement of power semiconductor devices, especially IGBTs. Base on the circuit operation analysis and measurement of IGBT characteristics, it's shown that the l…
  openalex Yanqun Shen, Jian Jiang, Yan Xiong, Yan Deng 等 2006-07-01 置信度 0.72 Insulated-gate bipolar transistorInductanceParasitic elementElectrical engineeringParasitic extraction
• A finite element formulation for the hydrodynamic semiconductor device equations
  openalex N. R. Aluru, A. Raefsky, Peter M. Pinsky, Kincho H. Law 等 1993-08-01 置信度 0.72 Finite element methodNonlinear systemPoisson's equationGalerkin methodCompressibility
• Questionability of drift-diffusion transport in the analysis of small semiconductor devices
  openalex Peter Rohr, Fredrik A. Lindholm, Kenneth R. Allen 1974-07-01 置信度 0.72 Bipolar junction transistorDiffusionSemiconductor deviceBase (topology)Transit time
• Comparative Analysis of Semiconductor Device Architectures for 5-nm Node and Beyond
  This letter, for the first time, investigates interactive logic cell schemes and transistor architecture scaling options for 5-nm technology node (N5) and beyond. The proposed novel transistors, such as Hexagonal NanoWire (NW) and NanoRing (NR) architectures, …
  openalex Peijie Feng, Seung-Chul Song, Giri Nallapati, John Zhu 等 2017-11-02 置信度 0.72 NanoringNode (physics)Logic gateTransistorParasitic capacitance
• Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects
  The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, …
  openalex Simone Dolabella, Aurelio Borzì, Alex Dommann, A. Neels 2021-12-23 置信度 0.72 DiffractionMaterials scienceSemiconductorDislocationLattice (music)
• Electronic Properties of Doped Semiconductors
  openalex B. I. Shklovskiǐ, Alex L. Efros 1984-01-01 置信度 0.72 SemiconductorDopingEngineering physicsImpurityNanotechnology
• Room-temperature semiconductor device and array configurations
  openalex Michael R. Squillante, L. Cirignano, R. Grazioso 2001-02-01 置信度 0.72 Cadmium telluride photovoltaicsSemiconductorDetectorSemiconductor deviceVariety (cybernetics)
• Multiprobe Measurement Method for Voltage-Dependent Capacitances of Power Semiconductor Devices in High Voltage
  The characterization of voltage-dependent capacitances of power semiconductor devices [diode, MOSFET, insulated gate bipolar transistor (IGBT), etc.] is very important for modeling their dynamic performances. A measurement method using two current probes has b…
  openalex Ke Li, Arnaud Videt, Nadir Idir 2013-01-14 置信度 0.72 Power (physics)Electrical engineeringComputer scienceTopology (electrical circuits)Physics
• CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices
  New interconnect materials that have a low line resistivity are required to address issues associated with the increased resistivity due to the aggressive downscaling of future semiconductor devices. In this work, CuAl2 thin films are investigated as a potenti…
  openalex Linghan Chen, Daisuke Ando, Yuji Sutou, Junichi Koike 2019-05-01 置信度 0.72 Electrical resistivity and conductivityMaterials scienceInterconnectionSemiconductorBlanket
• An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices
  We present an approach to the simulation of ultrasmall semiconductor devices based on Brownian motion of the carriers described by the Langevin equation. It follows the trajectories of individual particles in real space but does not require the computational e…
  openalex Clinton R. Arokianathan, Asen Asenov, J. H. Davies 1996-07-01 置信度 0.72 Brownian motionMonte Carlo methodStatistical physicsBrownian dynamicsSemiconductor device
• Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry
  In the backside interferometric thermal mapping technique, an infrared (IR) laser beam probes the temperature-induced changes in the semiconductor refractive index inside a semiconductor device, which results in a change in the measured optical phase shift. In…
  openalex D. Pogány, S. Bychikhin, C. Fürböck, Martin Litzenberger 等 2002-11-01 置信度 0.72 MicrosecondSemiconductorMaterials scienceDiodeSemiconductor laser theory
• Negative refraction in semiconductor metamaterials
  openalex Anthony J. Hoffman, Leonid Alekseyev, Scott S. Howard, Kale J. Franz 等 2007-10-14 置信度 0.72 MetamaterialNegative refractionPermittivitySuperlensTransformation optics
• Prospective of Semiconductor Memory Devices: from Memory System to Materials
  The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining. The conventional strategy for meeting such demand, i.e. shrinking of the memory cell size, will no longer be useful at some point in the future, owing to economic reasons…
  openalex Cheol Seong Hwang 2015-05-15 置信度 0.72 Neuromorphic engineeringVon Neumann architectureComputer sciencePoint (geometry)Semiconductor memory
• Reactions between Perfect Dislocations in Semiconductor Devices
  Abstract Semiconductor devices of “thyristor structure” are studied by the X‐ray topographic method. Typical perfect dislocations are generated in n‐p junction and glide in neighbouring {111} slip planes close to the crystal surface, thus contributing to the r…
  openalex M. Sauvage, David S. Simon 1969-01-01 置信度 0.72 SemiconductorMaterials scienceDislocationCondensed matter physicsSilicon
• Hot-carrier light emission from silicon metal-oxide-semiconductor devices
  Light emitted from energetic electrons and holes near the drain region of Si field-effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75…
  openalex Markus Herzog, F. Koch 1988-12-26 置信度 0.72 OptoelectronicsSiliconMaterials scienceImpact ionizationElectron
• RF and microwave semiconductor device handbook
  openalex 2003-05-01 置信度 0.72 MicrowaveSemiconductorOptoelectronicsMaterials scienceEngineering physics
• Transient thermal study of semiconductor devices
  An analytical, three-dimensional transient temperature solution of a two-layer semi-infinite plate structure with embedded hear sources is derived. The thickness of the second layer is assumed to extend to infinity. By incorporating the method of images, this …
  openalex Yong Min, Arthur Palisoc, C.C. Lee 1990-01-01 置信度 0.72 Transient (computer programming)Layer (electronics)ThermalSemiconductorSoftware
• Reliability issues in III–V compound semiconductor devices: optical devices and GaAs-based HBTs
  openalex Osamu Ueda 1999-12-01 置信度 0.72 Materials scienceOptoelectronicsHeterojunctionSemiconductorDislocation
• Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices
  Thin amorphous films were deposited by oxygen‐assisted pyrolysis of tantalum dichloro‐diethoxy‐acetylacetonate. Index of refraction and the optical gap measurements of the films were in agreement with previous results. The d‐c conduction mechanism appears to b…
  openalex E. Kaplan, Mária Balog, D. Frohman‐Bentchkowsky 1976-10-01 置信度 0.72 Tantalum pentoxideMaterials scienceTantalumChemical vapor depositionDielectric
• Determination of urea with an ammonia gas-sensitive semiconductor device in combination with urease
  openalex Fredrik Winquist, Anita Lloyd Spetz, I. Lundström, Bengt Danielsson 1984-01-01 置信度 0.72 ChemistryUreaseUreaChromatographyAmmonia
• Semiconductors for organic transistors
  Organic molecules/polymers with a π-conjugated (hetero)aromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. Howev…
  openalex Antonio Facchetti 2007-02-17 置信度 0.72 Organic field-effect transistorOrganic semiconductorTransistorMaterials scienceSemiconductor
• An introduction to the physics of semiconductor devices
  Chapter 1 Overview Chapter 2 Material properties and basic P-N junction relations Chapter 3 P-N Junction diodes Chapter 4 Bipolar Junction Transistors Chapter 5 MOS Field Effect Transistors Chapter 6 Junction Field Effect Transistors Chapter 7 Overview of spec…
  openalex 1999-07-01 置信度 0.72 SemiconductorEngineering physicsPhysicsOptoelectronics
• A straightforward analytical method for extraction of semiconductor device transient thermal parameters
  openalex F.N. Masana 2006-11-16 置信度 0.72 Transient (computer programming)ThermalSemiconductor deviceSemiconductorTime domain
• Materials for semiconductor devices that can bend, fold, twist, and stretch
  openalex John A. Rogers 2014-06-01 置信度 0.72 Fold (higher-order function)TwistSemiconductorMaterials scienceEngineering physics
• Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application
  Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs. The existing reliability predictions for the power electronics converter …
  openalex Ke Ma, Ui‐Min Choi, Frede Blaabjerg 2018-01-26 置信度 0.72 Reliability (semiconductor)Power (physics)Reliability engineeringEngineeringPower electronics
• Temperature adaptive driving of power semiconductor devices
  This work is about the development of a temperature-dependent driving strategy for power transistors, aimed at counterbalancing temperature related increases in their on-state resistance and power losses by a corresponding increase of the amplitude of the appl…
  openalex Wu Liang, Alberto Castellazzi 2010-07-01 置信度 0.72 Reliability (semiconductor)Power semiconductor deviceSemiconductor devicePower (physics)Transistor
• Improvement of zone control induction heating equipment for high-speed processing of semiconductor devices
  In order to process a semiconductor device of high quality, uniform heating is necessary, but it is not easy to heat uniformly with conventional induction heating equipment. To solve this problem, zone control induction heating equipment has been jointly devel…
  openalex Daisuke Miyagi, A. V. S. S. R. Sai, N. Takahashi, Naoki Uchida 等 2006-01-25 置信度 0.72 Induction heatingInduction coilElectromagnetic coilHeating elementSemiconductor
• Diamond tips and cantilevers for the characterization of semiconductor devices
  openalex A. Malavé, E. Oesterschulze, W. Kulisch, Thomas Trenkler 等 1999-03-01 置信度 0.72 DiamondMaterials scienceScanning probe microscopyCantileverSilicon
• Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
  We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off curre…
  openalex Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya 等 2003-05-22 置信度 0.72 Materials scienceOptoelectronicsFabricationThin-film transistorSemiconductor
• Power electronics: circuits, devices, and applications
  1. Introduction. 2. Power Semiconductor Diodes and Circuits. 3. Diode Rectifiers. 4. Power Transistors. 5. DC-DC Converters. 6. Pulse-width Modulated Inverters. 7. Thyristors. 8. Resonant Pulse Inverters. 9. Multilevel Inverters. 10. Controlled Rectifiers. 11.…
  openalex 1989-02-01 置信度 0.72 ThyristorElectronic circuitElectrical engineeringCommutationPower semiconductor device
• Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling
  openalex D. K. Ferry, A.M. Kriman, Meng Jeng Kann, Ravindra P. Joshi 1991-08-01 置信度 0.72 Monte Carlo methodScatteringStatistical physicsMonte Carlo molecular modelingPhysics
• Control of Schottky Barrier Heights on High- K Gate Dielectrics for Future Complementary Metal-Oxide Semiconductor Devices
  The calculated Schottky barrier heights of polar and nonpolar interfaces of many metals on HfO2 high dielectric constant gate oxide have been found to vary strongly with the metal work function and also with oxide termination, with relatively little Fermi leve…
  openalex K. Tse, John Robertson 2007-08-24 置信度 0.72 OxideDielectricSchottky diodeSchottky barrierMaterials science
• An Industry-Based Survey of Reliability in Power Electronic Converters
  A questionnaire survey was carried out to determine the industrial requirements and expectations of reliability in power electronic converters. The survey was subjective and conducted with a number of high-profile semiconductor manufacturers, integrators, and …
  openalex Shaoyong Yang, A.T. Bryant, Philip Mawby, Dawei Xiang 等 2011-03-15 置信度 0.72 Reliability (semiconductor)ConvertersAerospaceReliability engineeringPower (physics)
• Numerical modeling of magnetic-field-sensitive semiconductor devices
  Semiconductor devices in the presence of a magnetic field have been modeled numerically. The two-dimensional distributions of the electric potential, the electron concentration, and the hole concentration in a silicon slab exposed to a magnetic field have been…
  openalex L. Andor, H. Baltes, Arokia Nathan, H. G. Schmidt-Weinmar 1985-07-01 置信度 0.72 Magnetic fieldSiliconDiodeSemiconductorSemiconductor device
• Semiconductor device simulation at NTT
  The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In t…
  openalex K. Yokoyama, M. Tomizawa, A. Yoshii, T. Sudo 1985-10-01 置信度 0.72 Semiconductor deviceKey (lock)Monte Carlo methodSemiconductorComputer science
• Semiconductor Devices in Solid-State/Hybrid Circuit Breakers: Current Status and Future Trends
  Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well a…
  openalex Chunyang Gu, Patrick Wheeler, Alberto Castellazzi, Alan J. Watson 等 2017-04-06 置信度 0.72 Circuit breakerElectrical engineeringSemiconductor devicePower (physics)Power semiconductor device
• Electromagnetic interfacing of semiconductor devices and circuits
  This paper discusses the interactions between semiconductor devices and electromagnetic waves and the possible ways to interface modern devices and circuits in the mm-wave range. This topic is very important for advancing current MMIC designs and for developin…
  openalex Samir El‐Ghazaly, T. Itoh 2002-11-22 置信度 0.72 InterfacingSemiconductor deviceFinite-difference time-domain methodMonolithic microwave integrated circuitElectronic circuit
• Finite Difference Methods for the Transient Behavior of a Semiconductor Device
  openalex Jim Douglas, Ye Yuan 1987-01-01 置信度 0.72 Transient (computer programming)Semiconductor deviceFinite difference methodTransient analysisComputer science
• 2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods
  openalex José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi‐Wang Shu 2005-10-28 置信度 0.72 Monte Carlo methodBoltzmann equationSolverDirect simulation Monte CarloStatistical physics
• 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  openalex 2019-05-01 置信度 0.72 Electrical engineeringPower (physics)Computer scienceEngineering physicsEngineering
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