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• Ionic transport in ABO3 perovskite oxides: a computer modelling tour
  openalex 2000 置信度 0.90 Advancements in Solid Oxide Fuel CellsMagnetic and transport properties of perovskites and related materialsElectronic and Structural Properties of Oxides
• PDFfit2 and PDFgui: computer programs for studying nanostructure in crystals
  openalex 2007 置信度 0.90 X-ray Diffraction in CrystallographyCrystal Structures and PropertiesHigh-pressure geophysics and materials
• Linearly programmable two-dimensional halide perovskite memristor arrays for neuromorphic computing
  openalex 2024 置信度 0.90 Advanced Memory and Neural ComputingPerovskite Materials and ApplicationsPhotoreceptor and optogenetics research
• Material Evolution with Nanotechnology, Nanoarchitectonics, and Materials Informatics: What will be the Next Paradigm Shift in Nanoporous Materials?
  openalex 2021 置信度 0.90 Nanocluster Synthesis and ApplicationsElectrocatalysts for Energy ConversionAdvanced Photocatalysis Techniques
• On-chip photonic convolution by phase-change in-memory computing cells with quasi-continuous tuning
  openalex 2024 置信度 0.90 Neural Networks and Reservoir ComputingPhotonic and Optical DevicesOptical Network Technologies
• Reconfigurable Photonic GEMM Based on Phase-Change-Materials and Stochastic Computing
  openalex 2024 置信度 0.90 Neural Networks and Reservoir ComputingOptical Network TechnologiesPhotonic and Optical Devices
• Toward optical signal processing using Photonic Reservoir Computing
  openalex 2008 置信度 0.90 Neural Networks and Reservoir ComputingOptical Network TechnologiesPhotonic and Optical Devices
• Integrated photonic neuromorphic computing: opportunities and challenges
  openalex 2024 置信度 0.90 Neural Networks and Reservoir ComputingOptical Network TechnologiesPhotonic and Optical Devices
• Digital tools for material selection in product design
  openalex 2009 置信度 0.90 Material Selection and PropertiesChemistry Education and ResearchDesign Education and Practice
• Introducing Chiro-optical Activities in Photonic Synapses for Neuromorphic Computing and In-Memory Logic Operations
  openalex 2024 置信度 0.90 Neural Networks and Reservoir ComputingAdvanced Memory and Neural ComputingPhotonic and Optical Devices
• On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application
  openalex 2022 置信度 0.90 Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesGraphene research and applications
• Parallel convolutional processing using an integrated photonic tensor core
  openalex 2021 置信度 0.70 Neural Networks and Reservoir ComputingPhotonic and Optical DevicesOptical Network Technologies
• Self-supervised optimization of random material microstructures in the small-data regime
  openalex 2022 置信度 0.70 Machine Learning in Materials ScienceProbabilistic and Robust Engineering DesignAdvanced Multi-Objective Optimization Algorithms
• Arbitrary-direction, multichannel and ultra-compact power splitters by inverse design method
  openalex 2020 置信度 0.70 Photonic Crystals and ApplicationsPhotonic and Optical DevicesMetamaterials and Metasurfaces Applications
• Connecting Material Characteristics with System Properties for Membrane-Based Direct Air Capture (m-DAC) Using Process Operability and Inverse Design Approaches
  openalex 2025 置信度 0.70 Membrane Separation and Gas TransportMembrane Separation TechnologiesAdvanced Battery Technologies Research
• Photonic matrix multiplication lights up photonic accelerator and beyond
  openalex 2022 置信度 0.70 Neural Networks and Reservoir ComputingOptical Network TechnologiesPhotonic and Optical Devices
• Material identification using real and simulated thermal cues
  openalex 2005 置信度 0.70 Tactile and Sensory InteractionsSafety Warnings and SignageVisual perception and processing mechanisms
• Optical Time-Mapped Spectrograms (II): Fractional Talbot Designs
  openalex 2023 置信度 0.70 Advanced Fiber Laser TechnologiesAdvanced Photonic Communication SystemsPhotonic and Optical Devices
• Light‐Directed Writing of Chemically Tunable Narrow‐Band Holographic Sensors
  openalex 2014 置信度 0.70 Photorefractive and Nonlinear OpticsElectrowetting and Microfluidic TechnologiesPhotonic and Optical Devices
• Bandwidth allocation for multiservice access on EPONs
  openalex 2005 置信度 0.70 Advanced Photonic Communication SystemsAdvanced Optical Network TechnologiesOptical Network Technologies
• The next generation of passive optical networks: A review
  openalex 2016 置信度 0.70 Advanced Photonic Communication SystemsOptical Network TechnologiesAdvanced Optical Network Technologies
• Temporary Bonding and De-bonding Process for 2.5D/3D Applications
  openalex 2020 置信度 0.70 3D IC and TSV technologiesPhotonic and Optical DevicesNanofabrication and Lithography Techniques
• New optical fibres for high-capacity optical communications
  openalex 2016 置信度 0.70 Optical Network TechnologiesAdvanced Photonic Communication SystemsAdvanced Optical Network Technologies
• Augmented reality and virtual reality displays: emerging technologies and future perspectives
  openalex 2021 置信度 0.70 Advanced Optical Imaging TechnologiesPhotonic Crystals and ApplicationsPhotonic and Optical Devices
• Meta-optics achieves RGB-achromatic focusing for virtual reality
  openalex 2021 置信度 0.70 Metamaterials and Metasurfaces ApplicationsPhotonic Crystals and ApplicationsPlasmonic and Surface Plasmon Research
• Beating bandwidth limits for large aperture broadband nano-optics
  openalex 2024 置信度 0.70 Photonic and Optical DevicesNear-Field Optical MicroscopyOptical Coatings and Gratings
• S4 : A free electromagnetic solver for layered periodic structures
  openalex 2012 置信度 0.70 Photonic Crystals and ApplicationsOptical Coatings and GratingsAdvanced Antenna and Metasurface Technologies
• Accurate Estimation of Diffusion Coefficients and their Uncertainties from Computer Simulation
  openalex 2024 置信度 0.70 Diffusion Coefficients in LiquidsMaterial Dynamics and Properties
• Velocity Verlet algorithm for dissipative-particle-dynamics-based models of suspensions
  openalex 1999 置信度 0.70 Model Reduction and Neural NetworksElasticity and Material ModelingComposite Material Mechanics
• Interferometric architectures based All-Optical logic design methods and their implementations
  openalex 2015 置信度 0.70 Optical Network TechnologiesPhotonic and Optical DevicesAdvanced Fiber Laser Technologies
• Analysis and experimentation of key technologies in service-oriented optical internet
  openalex 2011 置信度 0.70 Optical Network TechnologiesAdvanced Photonic Communication SystemsAdvanced Optical Network Technologies
• A fast, one‐equation integration algorithm for the Lemaitre ductile damage model
  openalex 2002 置信度 0.70 Metal Forming Simulation TechniquesMetallurgy and Material FormingFatigue and fracture mechanics
• Energy-Efficient Integrated Sensing and Communication in Collaborative Millimeter Wave Networks
  openalex 2024 置信度 0.70 Millimeter-Wave Propagation and ModelingMicrowave Engineering and WaveguidesAdvanced Photonic Communication Systems
• Making the Case for a Model-Based Definition of Engineering Materials
  openalex 2017 置信度 0.70 Manufacturing Process and OptimizationProbabilistic and Robust Engineering DesignMaterial Selection and Properties
• 18.3 An 8b 160GS/s 57GHz Bandwidth Time-Interleaved DAC and Driver-Based Transmitter with Adaptive Calibration for 800Gb/s Coherent Optical Applications in 5nm
  openalex 2024 置信度 0.70 Photonic and Optical DevicesSemiconductor Lasers and Optical DevicesOptical Network Technologies
• 44 GHz Bandwidth Optical Receiver Monolithically Integrated in a SiGe ePIC BiCMOS Technology
  openalex 2025 置信度 0.70 Photonic and Optical DevicesSemiconductor Lasers and Optical DevicesRadio Frequency Integrated Circuit Design
• Autonomous chemistry: Navigating self-driving labs in chemical and material sciences
  openalex 2024 置信度 0.70 Innovative Microfluidic and Catalytic Techniques InnovationScientific Computing and Data Management
• 5G network slices embedding with sharable virtual network functions
  openalex 2020 置信度 0.70 Software-Defined Networks and 5GAdvanced Photonic Communication SystemsAdvanced Optical Network Technologies
• Acceptor Functionalization via Green Chemistry Enables High‐Performance n‐Type Organic Electrochemical Transistors for Biosensing, Memory Applications
  Abstract The organic electrochemical transistor (OECT) is one of the most versatile building blocks within the bioelectronics device toolbox. While p‐type organic semiconductors have progressed as OECT channel materials, only a few n‐type semiconductors have b…
  openalex Yazhou Wang, Anil Koklu, Yizhou Zhong, Tianrui Chang 等 2023-07-27 置信度 0.82 Materials scienceBioelectronicsNanotechnologyTransistorOrganic electronics
• Semiconductor Device Degradation by High Amplitude Current Pulses
  This paper presents the results of a lengthy and comprehensive investigation of semiconductor device degradation from nanosecond current pulses. Topics discussed include (1) previously published literature on pulse degradation and second breakdown, (2) experim…
  openalex W. D. Brown 1972-01-01 置信度 0.78 Materials scienceNanosecondDegradation (telecommunications)Semiconductor devicePulse (music)
• Elements of semiconductor-device reliability
  Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels…
  openalex C.G. Peattie, John Adams, Steve Carrell, Tont Dan George 等 1974-01-01 置信度 0.78 Reliability (semiconductor)Reliability engineeringQuality (philosophy)Process (computing)Semiconductor device
• Semiconductor quantum dots - towards a new generation of semiconductor devices
  A short overview of the technology and physics of semiconductor quantum dots is given. Different methods of creation of quantum dots and mechanisms of carrier confinements are described. The fundamental properties of these systems are discussed including curre…
  openalex Lucjan Jacak 2000-11-01 置信度 0.75 PhysicsSemiconductorQuantum dotSemiconductor materialsNanotechnology
• Generalized reciprocity theorem for semiconductor devices
  A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional de…
  openalex Κωνσταντίνος Μισιακός, F.A. Lindholm 1985-12-15 置信度 0.78 Reciprocity (cultural anthropology)Common emitterPhysicsSemiconductorElectron
• Modeling semiconductor devices with position-dependent material parameters
  An overview of the transport model describing electron and hole motion and density in solids with position-dependent band structures is presented. This includes materials with nonuniform composition such as graded heterojunctions, and devices with highly doped…
  openalex Alan H. Marshak 1989-09-01 置信度 0.78 Band gapSemiconductorBand diagramElectronCommon emitter
• SEMICONDUCTOR NANOWIRES AND NANOTUBES
  ▪ Abstract Semiconductor nanowires and nanotubes exhibit novel electronic and optical properties owing to their unique structural one-dimensionality and possible quantum confinement effects in two dimensions. With a broad selection of compositions and band str…
  openalex Matt Law, Joshua E. Goldberger, Peidong Yang 2004-07-07 置信度 0.78 NanowireMaterials scienceNanotechnologySemiconductorHeterojunction
• Fundamentals of Carrier Transport
  Fundamentals of Carrier Transport is an accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices. It is written specifically for engineers and students without an extensive background in quantum mechanics and sol…
  openalex Mark Lundstrom 2000-10-26 置信度 0.78 Mesoscopic physicsEngineering physicsVariety (cybernetics)SemiconductorTransport phenomena
• Electroluminescence in conjugated polymers
  openalex Richard H. Friend, R. W. Gymer, Andrew B. Holmes, J. H. Burroughes 等 1999-01-14 置信度 0.64 ElectroluminescencePolymerNanotechnologyFabricationMaterials science
• Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results
  The authors present SECOND, a program for large-scale semiconductor device simulation with truly three-dimensional grids. Since 3-D simulations necessitate large computing resources, the choice of algorithms and their implementation become of utmost importance…
  openalex Gernot Heiser, C. Pommerell, Jared A. Weis, Wolf Fïchtner 1991-01-01 置信度 0.78 Computer scienceWorkstationBlock (permutation group theory)AlgorithmTransient (computer programming)
• Charge Coupled Semiconductor Devices
  openalex W. S. BOYLE, G. E. SMITH 1991-03-01 置信度 0.67 SemiconductorOptoelectronicsMaterials scienceSemiconductor deviceComputer science
• An advanced PWM-switch model including semiconductor device nonlinearities
  Contrary to the classical ideal averaged models, the introduced averaged model includes the nonlinear effects of the power semiconductor devices. The proposed nonideal pulse width modulated (PWM)-switch model is a useful method for modeling pulse width modulat…
  openalex Anis Ammous, Kaiçar Ammous, Mariem Ayedi, Y. Ounajjar 等 2003-08-27 置信度 0.78 ConvertersPulse-width modulationSemiconductor devicePower (physics)Nonlinear system
• Semiconductor Devices
  openalex Narciso Garcı́a, Arthur Damask 1991-01-01 置信度 0.67 SemiconductorSiliconDopingImpurityMaterials science
• Analysis of negative capacitance and self-heating in organic semiconductor devices
  In admittance spectroscopy of organic semiconductor devices, negative capacitance values arise at low frequency and high voltages. This study aims at explaining the influence of self-heating on the frequency-dependent capacitance and demonstrates its impact on…
  openalex Evelyne Knapp, Beat Ruhstaller 2015-04-07 置信度 0.80 CapacitanceAdmittanceNegative impedance converterSteady state (chemistry)Frequency domain
• Progress in the industrial production of SiC substrates for semiconductor devices
  openalex St.G. Müller, R Glass, H. McD. Hobgood, V. F. Tsvetkov 等 2001-03-01 置信度 0.67 WaferSublimation (psychology)Materials scienceSilicon carbideSchottky diode
• Application of Preferential Electrochemical Etching of Silicon to Semiconductor Device Technology
  Preferential electrochemical etching of epitaxial structures has been applied to the fabrication of semiconductor devices. Preparation of thin layer devices and isolated structures is described. As an introduction to these applications, the etching of various …
  openalex M. J. J. Theunissen, J.A. Appels, W. H. C. G. Verkuylen 1970-01-01 置信度 0.78 Etching (microfabrication)EpitaxyMaterials scienceSiliconFabrication
• New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
  Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed val…
  openalex K. von Klitzing, G. Dorda, M. Pepper 1980-08-11 置信度 0.78 Hall effectMaterials scienceSemiconductorSiliconVoltage
• The Effects of Unsymmetric Matrix Permutations and Scalings in Semiconductor Device and Circuit Simulation
  The solution of large sparse unsymmetric linear systems is a critical and challenging component of semiconductor device and circuit simulations. The time for a simulation is often dominated by this part. The sparse solver is expected to balance different, and …
  openalex Olaf Schenk, Stefan Röllin, Anshul Gupta 2004-03-01 置信度 0.78 SolverComputer scienceReliability (semiconductor)Memory footprintDiagonal
• Generation and annihilation of traps in metal-oxide-semiconductor devices after negative air corona charging
  Surface and bulk traps along with positive oxide charge accumulation have been found to be generated in metal-oxide-semiconductor capacitors, when subjected to negative air corona discharge at slightly reduced pressure (≂10−1 Torr). The effects are neutralized…
  openalex Ila Prasad, R. S. Srivastava 1993-07-01 置信度 0.78 OxideTorrCapacitorSemiconductorMaterials science
• Electronic Processes of Conjugated Polymers in Semiconductor Device Structures
  openalex Richard H. Friend, G. J. Denton, J.J.M. Halls, N.T. Harrison 等 1997-01-01 置信度 0.67 ElectroluminescenceLasing thresholdMaterials scienceOptoelectronicsPhotoluminescence
• Design of molecular dyes for application in photoelectrochemical and electrochromic devices based on nanocrystalline metal oxide semiconductors
  openalex Roberto Argazzi, Neyde Yukie Murakami Iha, Hervé Zabri, Fabrice Odobel 等 2004-06-09 置信度 0.67 ElectrochromismNanocrystalline materialSemiconductorChemistryNanotechnology
• Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices
  Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices, Aoyama, Takayuki, Suzuki, Kunihiro, Tashiro, Hiroko, Toda, Yoko, Yamazaki, Tatsuya, Arimoto, Yoshihiro, Ito, Takashi
  openalex Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Y. Toda 等 1993-12-01 置信度 0.75 Materials scienceBoronSiliconOxideThermal diffusivity
• Global modeling of microwave applications by combining the FDTD method and a general semiconductor device and circuit simulator
  This paper presents the coupling of two commercially available simulation codes: DESSIS-ISE, a multidimensional semiconductor device and circuit simulator, and EMLAB-ISE, an electromagnetic-field solver based on the finite-difference time-domain (FDTD) method.…
  openalex Andreas Witzig, Christian Schuster, P. Regli, Wolf Fïchtner 1999-06-01 置信度 0.78 Finite-difference time-domain methodElectronic engineeringNonlinear systemMicrowaveElectronic circuit simulation
• 2D semiconductors for specific electronic applications: from device to system
  Abstract The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials have excellent p…
  openalex Xiaohe Huang, Chunsen Liu, Peng Zhou 2022-08-01 置信度 0.82 SemiconductorHeterojunctionTransistorMaterials scienceComputer science
• A review of advanced scanning probe microscope analysis of functional films and semiconductor devices
  openalex Günther Benstetter, Roland Biberger, Dongping Liu 2009-04-24 置信度 0.67 Scanning probe microscopySpreading resistance profilingScanning capacitance microscopyKelvin probe force microscopeMaterials science
• The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
  openalex Asen Asenov, J.R. Watling, A. R. Brown, D. K. Ferry 2002-12-01 置信度 0.67 Quantum tunnellingStatistical physicsQuantumPhysicsQuantum dot
• Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices
  Polycrystalline silicon-gate metal-oxide-semiconductor (MOS) capacitors have been fabricated with high-temperature anneals from 800 to 950 °C after gate oxidation and polycrystalline silicon deposition. Temperatures from 800 to 875 °C are found to have very li…
  openalex J.R. Schwank, Daniel M. Fleetwood 1988-08-29 置信度 0.78 Polycrystalline siliconMaterials scienceSiliconAnnealing (glass)Trapping
• Determination of charge transport activation energy and injection barrier in organic semiconductor devices
  Charge carrier transport in organic semiconductor devices is thermally activated with characteristic activation energies in the range of 0.2–0.6 eV, leading to strongly temperature-dependent behaviour. For designing efficient organic semiconductor materials an…
  openalex Simon Züfle, Stéphane Altazin, Alexander Hofmann, Lars Jäger 等 2017-09-19 置信度 0.80 Organic semiconductorSemiconductorMaterials scienceOptoelectronicsActivation energy
• Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
  openalex Massimo Gurioli, Zhiming Wang, Armando Rastelli, Takashi Kuroda 等 2019-05-13 置信度 0.71 Semiconductor nanostructuresMaterials sciencePhotonicsSemiconductorEpitaxy
• Semiconductor nanowire devices
  openalex Oliver Hayden, Ritesh Agarwal, Wei Lü 2008-10-01 置信度 0.67 NanowireNanotechnologyMaterials scienceSemiconductorFabrication
• On a Drift–Diffusion System for Semiconductor Devices
  openalex Rafael Granero-Belinchón 2016-04-29 置信度 0.69 Sobolev spaceNernst equationSemiconductorPoisson distributionDiffusion
• Iterative versus direct parallel substructuring methods in semiconductor device modelling
  The numerical simulation of semiconductor devices is extremely demanding in term of computational time because it involves complex embedded numerical schemes. At the kernel of these schemes is the solution of very ill-conditioned large linear systems. In this …
  openalex Luc Giraud, A. Marrocco, J.-C. Rioual 2004-06-17 置信度 0.78 Robustness (evolution)Iterative methodLinear systemComputer scienceKernel (algebra)
• Application of finite element methods to the simulation of semiconductor devices
  In this paper a survey is presented of the use of finite element methods for the simulation of the behaviour of semiconductor devices. Both ordinary and mixed finite element methods are considered. We indicate how the various mathematical models of semiconduct…
  openalex John J. H. Miller, W.H.A. Schilders, Song Wang 1999-01-01 置信度 0.78 Finite element methodMixed finite element methodApplied mathematicsPhysicsNonlinear system
• Physical Simulation of Optoelectronic Semiconductor Devices
  openalex D.W. Winston 1996-01-01 置信度 0.63 OptoelectronicsSemiconductorSemiconductor laser theorySemiconductor deviceMaterials science
• Thermal stress and fracture in shear-constrained semiconductor device structures
  The construction of semiconductor devices, as well as other electron devices, often requires the utilization of brittle materials, such as the semiconductor itself, as part of a larger structure. Thermal stress, caused by cooling from high temperature bonding …
  openalex T.C. Taylor, Fei Yuan 1962-05-01 置信度 0.78 Materials scienceStructural engineeringShear stressSemiconductorStress (linguistics)
• Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
  Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were us…
  openalex Yi Cui, Charles M. Lieber 2001-02-02 置信度 0.78 NanowireMaterials scienceNanotechnologySemiconductorNanoscopic scale
• Nanoscale semiconductor devices as new biomaterials
  Research on nanoscale semiconductor devices will elicit a novel understanding of biological systems. First, we discuss why it is necessary to build interfaces between cells and semiconductor nanoelectronics. Second, we describe some recent molecular biophysics…
  openalex John F. Zimmerman, Ramya Parameswaran, Bozhi Tian 2014-01-01 置信度 0.80 NanotechnologyNanoscopic scaleSemiconductorMaterials scienceOptoelectronics
• Microlithography Fundamentals in Semiconductor Devices and Fabrication Technology
  "Explores the science and technology of lithographic processes and resist materials and summarizes the most recent innovations in semiconductor manufacturing. Considers future trends in lithography and resist material technology. Reviews the interaction of lig…
  openalex Saburo Nonogaki, Ueno Takumi, Toshio Ito 2018-05-16 置信度 0.78 FabricationSemiconductorOptoelectronicsMaterials scienceEngineering physics
• Feasibility Study of Mechanical Stress Wave Detection in Power Semiconductor Devices Using Bare FBG Sensors
  Power semiconductor devices generate mechanical stress wave (MSW) signals during switching processes, which can be used for condition monitoring (CM) of these devices with the advantages of noninvasive and non-destructive monitoring. Existing MSW signal detect…
  openalex Yunze He, Man Yuan, Qiying Li, Longhai Tang 等 2025-10-02 置信度 0.84 Electromagnetic interferenceFiber Bragg gratingMaterials scienceInterference (communication)Semiconductor device
• Roadmap on organic–inorganic hybrid perovskite semiconductors and devices
  Metal halide perovskites are the first solution processed semiconductors that can compete in their functionality with conventional semiconductors, such as silicon. Over the past several years, perovskite semiconductors have reported breakthroughs in various op…
  openalex Lukas Schmidt‐Mende, Vladimir Dyakonov, Selina Olthof, Feray Ünlü 等 2021-10-01 置信度 0.82 Perovskite (structure)Materials scienceSemiconductorEngineering physicsNanotechnology
• Single-layer MoS2 transistors
  openalex Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio, Valentina Giacometti 等 2011-01-30 置信度 0.66 Materials scienceGrapheneOptoelectronicsBand gapTransistor
• A systematic approach to modeling of power semiconductor devices based on charge control principles
  The charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models. This method represents a systematic technique for constructing models for power electronic …
  openalex Chao Ma, P.O. Lauritzen, Pao-Yi Lin, I. Budihardjo 等 2002-12-17 置信度 0.75 Charge (physics)Computer scienceCharge controlPower (physics)Simple (philosophy)
• Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information
  Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices.…
  openalex Ke Ma, Amir Sajjad Bahman, Szymon Bęczkowski, Frede Blaabjerg 2014-08-27 置信度 0.80 Semiconductor devicePower semiconductor deviceReliability engineeringPower (physics)Semiconductor
• A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices
  openalex Sylvain Pietranico, Stéphane Lefebvre, Sylvie Pommier, M. Berkani Bouaroudj 等 2011-07-24 置信度 0.69 Materials scienceDegradation (telecommunications)AluminiumSemiconductorTransistor
• Semiconductor spintronics
  Semiconductor spintronics Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are …
  openalex Jaroslav Fabian, Alex Matos-Abiague, Christian Ertler, Peter Stano 等 2007-08-01 置信度 0.78 SpintronicsSpin transistorSpin engineeringSpinplasmonicsSpin pumping
• A Procedure for Cross Sectioning Specific Semiconductor Devices for Both SEM and TEM Analysis
  openalex J. Benedict, Ron Anderson, Stanley J. Klepeis, Mohamed Chaker 1990-01-01 置信度 0.67 Materials sciencePolishingIon milling machineSemiconductorSample preparation
• Review of SiC based Power Semiconductor Devices and their Applications
  Silicon based Power Semiconductor Devices are extensively used in power electronic applications for the last few decades. Recent developments in power electronics require devices with high power rating, switching frequency and operating temperature but silicon…
  openalex Raksha Adappa, K. Suryanarayana, H. Swathi Hatwar, M. Ravikiran Rao 2019-07-01 置信度 0.82 Silicon carbideWide-bandgap semiconductorSemiconductorMaterials scienceSilicon
• Instability in electrical performance of organic semiconductor devices
  Abstract A field effect transistor (FET) has been fabricated with the hexamer of thiophene (α‐sexithienyl) in order to assess the performance of such electronic devices based on an organic material. Particular emphasis has been given to the determination of th…
  openalex P. Ostoja, S. Guerri, M. Impronta, P. Zabberoni 等 1992-06-01 置信度 0.78 Organic semiconductorMaterials scienceElectric fieldInstabilityField-effect transistor
• Characterization and comparison of 1.2 kV SiC power semiconductor devices
  This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET. Both commercial and sample devices from the semiconductor industry's well…
  openalex Christina DiMarino, Zheng Chen, Dushan Boroyevich, Rolando Burgos 等 2013-09-01 置信度 0.80 Characterization (materials science)Materials scienceSemiconductorOptoelectronicsSilicon carbide
• Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
  The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the b…
  openalex Rohit Galatage, D. M. Zhernokletov, Hong Dong, Barry Brennan 等 2014-07-07 置信度 0.80 CapacitanceDielectricMaterials scienceSemiconductorDispersion (optics)
• Computer-aided thermal analysis of power semiconductor devices
  Thermal analysis of power semiconductor devices is often complicated by odd geometries and the nonlinear properties of materials. It is the type of problem that can best be handled by a computer. Fortunately, numerous general-purpose heat transfer programs hav…
  openalex F. Wenthen 1970-09-01 置信度 0.78 Computer scienceConvergence (economics)Nonlinear systemSemiconductor deviceAcceleration
• Two-dimensional perovskite heterostructures for single crystal semiconductor devices
  Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals…
  openalex Jee Yung Park, Yoon Ho Lee, Hyojung Kim, Letian Dou 2023-08-08 置信度 0.82 HeterojunctionMaterials sciencePerovskite (structure)Semiconductorvan der Waals force
• A simple method for evaluating the transient thermal response of semiconductor devices
  openalex N.Y.A. Shammas, M.P. Rodriguez, F.N. Masana 2002-01-01 置信度 0.67 Transient (computer programming)Time constantThermalTransient responseExponential function
• Semiconductor device physics
  openalex 1962-08-01 置信度 0.67 SemiconductorPhysicsEngineering physicsMaterials scienceOptoelectronics
• Performance of a parallel algebraic multilevel preconditioner for stabilized finite element semiconductor device modeling
  openalex Paul Lin, John N. Shadid, Marzio Sala, Raymond S. Tuminaro 等 2009-05-22 置信度 0.67 PreconditionerSolverGeneralized minimal residual methodMultigrid methodFinite element method
• GaInAsP alloy semiconductors
  Provides an in-depth introduction to the growth, characterization, and device technology of the GaInAsP conductor, the cornerstone of the optical fibre telecommunications industry. Includes a comprehensive treatment of all known crystal growth methods. Relates…
  crossref T. P. Pearsall 1982-01-01 置信度 0.70 SemiconductorMaterials scienceOptoelectronicsCornerstoneCharacterization (materials science)
• Semiconductor device simulation using adaptive refinement and flux upwinding
  An adaptive mesh refinement scheme and dynamic data structure were developed in conjunction with a flux-upwind Petrov-Galerkin finite-element formulation for analysis of semiconductor device equations. The electrostatic potential equation and carrier-current c…
  openalex Mukul M. Sharma, Graham F. Carey 1989-06-01 置信度 0.78 Upwind schemeAdaptive mesh refinementPetrov–Galerkin methodFinite element methodComputer science
• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
  ldquoConventionalrdquo techniques and related capacitance-voltage characteristic interpretation were established to evaluate interface trap density on Si substrates. We show that blindly applying these techniques on alternative substrates can lead to incorrect…
  openalex Koen Martens, Chi On Chui, Guy Brammertz, Brice De Jaeger 等 2008-01-25 置信度 0.78 Trap (plumbing)CapacitanceConductanceInterface (matter)Semiconductor
• Semiconductor Optoelectronic Devices
  openalex 2003-01-01 置信度 0.67 OptoelectronicsSemiconductorMaterials scienceSemiconductor deviceNanotechnology
• Semiconductor Nanocrystals: Structure, Properties, and Band Gap Engineering
  Semiconductor nanocrystals are tiny light-emitting particles on the nanometer scale. Researchers have studied these particles intensely and have developed them for broad applications in solar energy conversion, optoelectronic devices, molecular and cellular im…
  openalex Andrew M. Smith, Shuming Nie 2009-10-14 置信度 0.78 SemiconductorMaterials scienceNanocrystalCharge carrierOptoelectronics
• Local Hall effect in hybrid ferromagnetic/semiconductor devices
  The authors have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resis…
  openalex Jinki Hong, Sungjung Joo, Tae-Suk Kim, Kungwon Rhie 等 2007-01-08 置信度 0.78 MagnetoresistanceSpintronicsCondensed matter physicsFerromagnetismHall effect
• Ion Implantation in Semiconductors
  openalex James W. Mayer, O. J. Marsh 1969-01-01 置信度 0.64 Ion implantationMaterials scienceSiliconOptoelectronicsSemiconductor