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• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66
• Domain Decomposition Method for Maxwell's Equations: Scattering off Periodic Structures
  We present a domain decomposition approach for the computation of the electromagnetic field within periodic structures. We use a Schwarz method with transparent boundary conditions at the interfaces of the domains. Transparent boundary conditions are approxima…
  datacite Schädle, Achim, Zschiedrich, Lin, Burger, Sven, Klose, Roland 等 2006 置信度 0.66 Numerical Analysis (math.NA)Mathematical Physics (math-ph)FOS: MathematicsFOS: MathematicsFOS: Physical sciences
• Coulomb-Enhanced Multiphoton Processes in Quantum Materials
  A typical light--matter interaction process in solids creates an electron--hole (e--h) pair across a bandgap via resonant absorption of a photon. It is well known that the Coulombic binding of e--h pairs into atom-like excitons strongly enhances linear absorpt…
  datacite Wu, Wade 2025 置信度 0.66 multiphotonmany-bodyhigh-harmonic generationsemiconductorsmultiphoton absorption
• The Octet Framework: Eight Closed-Form Formulas Aligned with the τ-Law (Tau Scaling Law) for Post-Moore Physical Boundary Definition, 3D Stacking Optimization, and Timing-EDA Co-Design
  This work proposes The Octet Framework, an original set of eight closed-form formulas based on the τ-Law (Tau Scaling Law) for post-Moore semiconductor physical boundary definition, 3D stacking optimization, and timing-EDA co-design. Facing the scaling saturat…
  datacite Xu, Lingguang 2026 置信度 0.66 τ theory, time shrinking, closed-form, post-moore, physical boundary, 3D stacking, timing analysis, EDA co-design, multi-physics, process optimization, AI cluster, latency optimization, semiconductor, integrated circuits
• The Octet Framework: Eight Closed-Form Formulas Aligned with the τ-Law (Tau Scaling Law) for Post-Moore Physical Boundary Definition, 3D Stacking Optimization, and Timing-EDA Co-Design
  This work proposes The Octet Framework, an original set of eight closed-form formulas based on the τ-Law (Tau Scaling Law) for post-Moore semiconductor physical boundary definition, 3D stacking optimization, and timing-EDA co-design. Facing the scaling saturat…
  datacite Xu, Lingguang 2026 置信度 0.66 τ theory, time shrinking, closed-form, post-moore, physical boundary, 3D stacking, timing analysis, EDA co-design, multi-physics, process optimization, AI cluster, latency optimization, semiconductor, integrated circuits
• Chinese Advanced Chip‑Packaging Bypasses EUV Restrictions — E8 Intelligence Research
  Discovered via YouTube Monitor: "China Just Proved It Doesn't Need EUV. It Has Packaging." (Quantum Silk Route) URL: https://www.youtube.com/watch?v=zV87-tVpLmo China has demonstrated a novel 3‑D chip‑stacking and wafer‑level packaging technology that achieves…
  datacite Caldin, Andrew Stewart 2026 置信度 0.66 E8 geometryartificial intelligencequantum computingE8 latticeindependent research
• Chinese Advanced Chip‑Packaging Bypasses EUV Restrictions — E8 Intelligence Research
  Discovered via YouTube Monitor: "China Just Proved It Doesn't Need EUV. It Has Packaging." (Quantum Silk Route) URL: https://www.youtube.com/watch?v=zV87-tVpLmo China has demonstrated a novel 3‑D chip‑stacking and wafer‑level packaging technology that achieves…
  datacite Caldin, Andrew Stewart 2026 置信度 0.66 E8 geometryartificial intelligencequantum computingE8 latticeindependent research
• Wideband Balanced Photodetectors for Classical and Quantum Light Detection from Optical, EUV, to X-rays
  The rapid development of coherent short-wavelength light sources in the extreme ultraviolet (EUV) and soft X-ray (SXR) regimes has created a growing need for advanced optoelectronic detection capabilities, particularly for quantum-noise-limited measurements, m…
  datacite Ryger, Ivan, Brown, Terry, Eissa, Dina S., Liao, Chen-Ting 2026 置信度 0.66 Instrumentation and Detectors (physics.ins-det)Instrumentation and Methods for Astrophysics (astro-ph.IM)Applied Physics (physics.app-ph)Optics (physics.optics)Quantum Physics (quant-ph)
• High-NA EUV Lithography and the Future of Artificial Intelligence Hardware: Overcoming the Sub-2nm Barrier
  datacite Youvan, Douglas C 2026 置信度 0.66
• Holographic EUV Lithography at 40 nm Resolution
  Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale research and prototypi…
  datacite Li, Ziqi, Giannopoulos, Iason, Dong, Lisong, Kazazis, Dimitrios 等 2026 置信度 0.66 Optics (physics.optics)FOS: Physical sciencesFOS: Physical sciences
• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66
• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66
• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66
• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66
• Hexagonal Fractal Hybrid Transistor Architecture (HFHTA)
  A conceptual engineering design proposing a novel semiconductor architecture based on hexagonal honeycomb topology integrating three independent transistor channels per cell (3-in-1), memristive neuromorphic elements, and void-less hierarchical logic fill. The…
  datacite yacoub 2026 置信度 0.66 transistorneuromorphichexagonalsemiconductorCMOS
• Multi-Beam Direct-Write Electron Lithography via Multi-Rate Electromagnetic Steering — v5 Open Architecture Release
  An open, mask-free, multi-vendor architecture for mature-node semiconductor manufacturing (50-180 nm), targeting roughly 10× lower capital cost than EUV (~$37M per tool vs $200-400M), with no single-vendor architectural dependency. Architectural floor reaches …
  datacite Morin, Robert Gerald 2026 置信度 0.66 electron beam lithographymulti-beam EBLdirect-write lithographycryogenic lithographysuperconducting deflection
• Multi-Beam Direct-Write Electron Lithography via Multi-Rate Electromagnetic Steering — v5 Open Architecture Release
  An open, mask-free, multi-vendor architecture for mature-node semiconductor manufacturing (50-180 nm), targeting roughly 10× lower capital cost than EUV (~$37M per tool vs $200-400M), with no single-vendor architectural dependency. Architectural floor reaches …
  datacite Morin, Robert Gerald 2026 置信度 0.66 electron beam lithographymulti-beam EBLdirect-write lithographycryogenic lithographysuperconducting deflection
• Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
  Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon quantum dot arrays. Usin…
  datacite Loenders, Arne, Van Damme, Jacques, Godfrin, Clement, Favia, Paola 等 2026 置信度 0.66 Quantum Physics (quant-ph)Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Impedance Analyzer and Triggering System for Microfluidic Cell Sorting; The History of Photolithography
  While my technical project of microfluidic impedance cytometry and STS project on photolithography operate within different subfields of electrical engineering, they are connected by two common challenges. The first is engineering is not an individual effort, …
  datacite Scott, Ryan 2026 置信度 0.66 PhotolithographySemiconductorCytometry
• 光刻机困境的五维诊断与战略干预——基于协同系数κ的系统分析
  光刻机被誉为现代工业的“皇冠明珠”,其研制困境常被简化为“单一技术卡脖子”。本文运用笔者提出的五维系统论(Five-Dimensional System Theory, 5DST),将极紫外(EUV)光刻机产业链抽象为五维存在体:边界(B)、结构(S)、储备(R)、方向(D)、强度(I)。通过构建维度间协同矩阵与协同系数κ,定量—定性结合地识别出该超复杂系统的核心瓶颈并非单一技术点缺失,而是维度间严重失配导致的“协同崩溃”状态。进一步,本文提出κ梯度提升方法,通过计算各维度的边际弹性确定干预优先级,并给出“扩边界—…
  datacite Zhao, Guiru 2026 置信度 0.66 五维系统论;协同系数;存在体;光刻机;复杂系统;产业链韧性;战略干预
• 光刻机困境的五维诊断与战略干预——基于协同系数κ的系统分析
  光刻机被誉为现代工业的“皇冠明珠”,其研制困境常被简化为“单一技术卡脖子”。本文运用笔者提出的五维系统论(Five-Dimensional System Theory, 5DST),将极紫外(EUV)光刻机产业链抽象为五维存在体:边界(B)、结构(S)、储备(R)、方向(D)、强度(I)。通过构建维度间协同矩阵与协同系数κ,定量—定性结合地识别出该超复杂系统的核心瓶颈并非单一技术点缺失,而是维度间严重失配导致的“协同崩溃”状态。进一步,本文提出κ梯度提升方法,通过计算各维度的边际弹性确定干预优先级,并给出“扩边界—…
  datacite Zhao, Guiru 2026 置信度 0.66 五维系统论;协同系数;存在体;光刻机;复杂系统;产业链韧性;战略干预
• Deep Ultraviolet Plasmonics Using Momentum-Resolved Electron Energy Loss Spectroscopy
  Plasmonics deals with the collective excitations of light coupled with free electrons in matter. It has widespread use in the fields of biosensing and nanoscale waveguiding due to the enhancement of the electric fields. My thesis deals with an important fronti…
  datacite Poursoti, Zohreh 2023 置信度 0.66 Deep ultraviolet plasmonicsExtreme ultraviolet plasmonicsMomentum-resolved electron energy loss spectroscopy (qEELS)Deep ultraviolet (DUV) radiation sourceSurface plasmon polariton
• EUV mask modeling based on wide-angle full-vector beam propagation method
  Extreme ultraviolet (EUV) lithography imaging models have garnered widespread attention as digital twin simulation engines for the EUV lithography process. However, as the core of EUV lithography imaging simulation, the EUV mask model still faces challenges in…
  datacite Zhong, Zhilong, Liu, Jiamin, He, Pinxuan, Gu, Honggang 等 2026 置信度 0.66 Uncategorized
• EUV mask modeling based on wide-angle full-vector beam propagation method
  Extreme ultraviolet (EUV) lithography imaging models have garnered widespread attention as digital twin simulation engines for the EUV lithography process. However, as the core of EUV lithography imaging simulation, the EUV mask model still faces challenges in…
  datacite Zhong, Zhilong, Liu, Jiamin, He, Pinxuan, Gu, Honggang 等 2026 置信度 0.66 Uncategorized
• Global Geometry-Based bulge-Concave Triangular Fractal Nanoscale Metamaterial
  This work presents a complete China-original technical solution for breaking 3nm/2nm advanced chip process bottlenecks, including the main design framework and the underlying physical mechanism as supplementary material. Based on the global geometry unificatio…
  datacite Xiang, Kaili 2026 置信度 0.66 Global Geometry; Bulge-Concave Triangular Fractal Lattice; Nanoscale Metamaterial; 3nm Chip; Biomimetic 3D Printing; EUV Bottleneck; Electron Confinement; Electron Transport; Low Dielectric; High Thermal Conductivity; Micro-Nano Sensing; Geometric Symbol Script
• Physics-Informed Latent Space Dynamics Identification for Time-Dependent NLTE Atomic Kinetics
  Non-local thermodynamic equilibrium (NLTE) calculations remain a major computational bottleneck in radiation--hydrodynamics, while most existing machine-learning surrogates treat NLTE as a static input--output mapping rather than a kinetic evolution problem. H…
  datacite Nam, Jeongwoo, Anderson, William, Choi, Youngsoo, Le, Hai P. 等 2026 置信度 0.66 Plasma Physics (physics.plasm-ph)Computational Physics (physics.comp-ph)FOS: Physical sciencesFOS: Physical sciences
• Opto-Metallurgy and the Photonide Class: Architectural Foundations for Zero-Latency Photonic AI Inference
  Opto-Metallurgy and the Photonide Class: Architectural Foundations for Zero-Latency Photonic AI Inference 1. The Terminal Velocity of the Electronic Paradigm The trajectory of artificial intelligence infrastructure is rapidly approaching an insurmountable phys…
  datacite Brewer, Mark Anthony 2026 置信度 0.66
• Opto-Metallurgy and the Photonide Class: Architectural Foundations for Zero-Latency Photonic AI Inference
  Opto-Metallurgy and the Photonide Class: Architectural Foundations for Zero-Latency Photonic AI Inference 1. The Terminal Velocity of the Electronic Paradigm The trajectory of artificial intelligence infrastructure is rapidly approaching an insurmountable phys…
  datacite Brewer, Mark Anthony 2026 置信度 0.66
• Structural Fragility in the Global Semiconductor Matrix: Lithographic Chokepoints and the Imperative for "Silicon Sovereignty"
  Background: The compounding demands of Generative AI, ubiquitous IoT infrastructure, and advanced defense systems have inextricably linked global economic stability to the advanced semiconductor supply chain. Historically modeled as a resilient, distributed fr…
  datacite Rajan, Mayone Maha 2026 置信度 0.66 Systems EngineeringHardware SystemsComputer EngineeringOperations Research, Systems Engineering and Industrial EngineeringScience and Technology Law
• Global Geometry-Based Drum-Concave Triangular Fractal Nanoscale Metamaterial
  Based on the independently proposed global geometry unification principle, this paper presents a China original technical solution for 3nm/2nm advanced process chips. Its core structure is a bulge-concave triangular fractal lattice metamaterial integrating mul…
  datacite Xiang, Kaili 2026 置信度 0.66
• Consciousness in Silicon: The Industrial Proof — Light, Masks, and the Symmetry Breaking Already Happening at Planetary Scale
  This paper demonstrates that the semiconductor fabrication process constitutes an industrial-scale proof of informational symmetry breaking as a mechanism for consciousness emergence. Related to prior work on the Infinite Wave Function and Informational Symmet…
  datacite Blanc, Jérémy 2026 置信度 0.66 informational symmetry breakingconsciousnesssiliconEUV lithographyintegrated information theory
• DESIGN AND SYNTHESIS OF SEQUENCE-DEFINED PEPTOID PHOTORESISTS AND PEPTOID-PMMA BLOCK COPOLYMERS FOR NEXT-GENERATION EUV LITHOGRAPHY
  datacite Liu, Danya 2025 置信度 0.66
• Time-resolved spectroscopic investigation of N2/H2 nanosecond pulsed discharges and EUV-induced low-temperature plasmas
  datacite Maestri, Luca 2026 置信度 0.66 Extreme ultraviolet (EUV) lithography, EUV-induced plasmas, low-temperature (non-thermal) plasmas, optical emission spectroscopy (OES), H2/N2 mixtures, nanosecond pulsed discharges (NPD), electron-beam radiation (EBR), time-resolved spectroscopy, rotational and vibrational temperatures, molecular band spectroscopy (N2 SPS, N2+ FNS, H2 Fulcher-α), Balmer series emission, collisional–radiative modelling, kinetic modelling, plasma diagnosticsExtreme ultraviolet (EUV) lithographyEUV-induced plasmaslow-temperature (non-thermal) plasmasoptical emission spectroscopy (OES)
• Physical Development of the Quantum Vacuum: Geometric Imprinting of Zero-Mass Deadlocks in Deep Space Voids and Terrestrial Extreme Pseudo-Vacuums
  Contemporary high-energy physics and Quantum Field Theory (QFT) regarding the probing of Zero-Point Energy and virtual particle fluctuations have long been constrained by the macroscopic material interference of measuring instruments and the wavefunction Decoh…
  datacite WUN, SYU JIA 2025 置信度 0.66 Absolute NothingnessBeing and NothingnessCausal TensorClosed Loop SystemsClosed Systems
• Geometric Imprinting of the Infinite-Speed Wave State and Lithographic Phase Transition: A Purely Mechanical Observation Model Transcending the Uncertainty Principle
  Contemporary quantum physics, constrained by "Heisenberg's Uncertainty Principle," establishes that the spatial coordinates and momentum of microscopic entities cannot be simultaneously precisely localized, and traditional observational behavior inevitably tri…
  datacite WUN, SYU JIA 2025 置信度 0.66 Absolute NothingnessBeing and NothingnessCausal TensorClosed Loop SystemsClosed Systems
• Debris Mitigation of a Xe discharge-produced plasma source combined gas jet and Halbach cylinder
  High-energy ions and metal debris generated by extreme ultraviolet (EUV) light sources pose a severe threat to collector optics. This study demonstrates a hybrid mitigation strategy combining a helium buffer gas jet with a segmented Halbach cylinder to suppres…
  datacite Yang, Guo, Zhang, Jianhua, Zhou, Chenhao, Chong, Kai Leong 等 2026 置信度 0.66 Engineering
• Mitigating Pattern Collapse in High-Resolution EUV Lithography Using the Organic Dry Development Rinse (O-DDR) Process
  Pattern collapse emerges as a key factor leading to the failure of photoresist patterns in high-resolution EUV lithography. Its significance escalates as feature sizes decrease and pitches become smaller, transitioning to high-NA EUV, potentially leading to ch…
  datacite Heo, Seonggil 2024 置信度 0.66 Nanomanufacturing
• Acoustic Resonance Scaffolding: Standing Wave Topology as a Self-Aligned Via Architecture for Monolithic 3D Semiconductor Integration
  We propose a cross-layer self-alignment primitive for monolithic 3D semiconductor interconnect in which acoustic wavelength, rather than lithographic overlay, defines inter-tier via position. Standing surface acoustic waves (SSAWs) applied during the fluid pha…
  datacite Whitty, William Harold 2026 置信度 0.66 monolithic 3D integrationBEOLBEOL interconnectsemiconductor fabricationacoustic self-alignment
• Acoustic Resonance Scaffolding: Standing Wave Topology as a Self-Aligned Via Architecture for Monolithic 3D Semiconductor Integration
  We propose a cross-layer self-alignment primitive for monolithic 3D semiconductor interconnect in which acoustic wavelength, rather than lithographic overlay, defines inter-tier via position. Standing surface acoustic waves (SSAWs) applied during the fluid pha…
  datacite Whitty, William Harold 2026 置信度 0.66 monolithic 3D integrationBEOLBEOL interconnectsemiconductor fabricationacoustic self-alignment
• Consciousness in Silicon: The Industrial Proof — Light, Masks, and the Symmetry Breaking Already Happening at Planetary Scale
  This paper demonstrates that the semiconductor fabrication process constitutes an industrial-scale proof of informational symmetry breaking as a mechanism for consciousness emergence. Related to prior work on the Infinite Wave Function and Informational Symmet…
  datacite Blanc, Jérémy 2026 置信度 0.66 informational symmetry breakingconsciousnesssiliconEUV lithographyintegrated information theory
• Consciousness in Silicon: The Industrial Proof — Light, Masks, and the Symmetry Breaking Already Happening at Planetary Scale
  This paper demonstrates that the semiconductor fabrication process constitutes an industrial-scale proof of informational symmetry breaking as a mechanism for consciousness emergence. Related to prior work on the Infinite Wave Function and Informational Symmet…
  datacite Blanc, Jérémy 2026 置信度 0.66 informational symmetry breakingconsciousnesssiliconEUV lithographyintegrated information theory
• Consciousness in Silicon: The Industrial Proof — Light, Masks, and the Symmetry Breaking Already Happening at Planetary Scale
  This paper demonstrates that the semiconductor fabrication process constitutes an industrial-scale proof of informational symmetry breaking as a mechanism for consciousness emergence. Related to prior work on the Infinite Wave Function and Informational Symmet…
  datacite Blanc, Jérémy 2026 置信度 0.66 informational symmetry breakingconsciousnesssiliconEUV lithographyintegrated information theory
• Acoustic Resonance Scaffolding: Standing Wave Topology as a Self-Aligned Via Architecture for Monolithic 3D Semiconductor Integration
  We propose a novel semiconductor fabrication architecture in which standing surface acoustic waves (SSAWs) applied during the fluid phase of dielectric deposition create deterministic periodic surface topology — mountains, valleys, and saddle points — whose ge…
  datacite Whitty, William Harold 2026 置信度 0.66 monolithic 3D integrationBEOLBEOL interconnectsemiconductor fabricationacoustic self-alignment
• Acoustic Resonance Scaffolding: Standing Wave Topology as a Self-Aligned Via Architecture for Monolithic 3D Semiconductor Integration
  We propose a novel semiconductor fabrication architecture in which standing surface acoustic waves (SSAWs) applied during the fluid phase of dielectric deposition create deterministic periodic surface topology — mountains, valleys, and saddle points — whose ge…
  datacite Whitty, William Harold 2026 置信度 0.66 monolithic 3D integrationBEOLBEOL interconnectsemiconductor fabricationacoustic self-alignment
• Acoustic Resonance Scaffolding: Standing Wave Topology as a Self-Aligned Via Architecture for Monolithic 3D Semiconductor Integration
  We propose a novel semiconductor fabrication architecture in which standing surface acoustic waves (SSAWs) applied during dielectric deposition create deterministic periodic surface topol- ogy — mountains, valleys, and saddle points — whose geometry is defined…
  datacite Whitty, William Harold 2026 置信度 0.66 monolithic 3D integrationBEOLBEOL interconnectsemiconductor fabricationacoustic self-alignment
• Modeling of line roughness and its impact on the diffraction intensities and the reconstructed critical dimensions in scatterometry
  We investigate the impact of line edge and line width roughness (LER, LWR) on the measured diffraction intensities in angular resolved extreme ultraviolet (EUV) scatterometry for a periodic line-space structure designed for EUV lithography. LER and LWR with ty…
  datacite Gross, Hermann, Henn, Mark-Alexander, Heidenreich, Sebastian, Rathsfeld, Andreas 等 2012 置信度 0.66 510Diffraction gratingsmetrology
• Acoustic Resonance Scaffolding: Standing Wave Topology as a Self-Aligned Via Architecture for Monolithic 3D Semiconductor Integration
  We propose a novel semiconductor fabrication architecture in which standing surface acoustic waves (SSAWs) applied during dielectric deposition create deterministic periodic surface topol- ogy — mountains, valleys, and saddle points — whose geometry is defined…
  datacite Whitty, William Harold 2026 置信度 0.66 monolithic 3D integrationBEOLBEOL interconnectsemiconductor fabricationacoustic self-alignment
• D4VCA Stage 2 Prototype: Fabrication Specification for the 10×-Scaled Silicon-on-Sapphire Strain Computing Substrate
  Complete fabrication specification for the Stage 2 prototype of the D4 Volumetric Cognitive Architecture — a strain-based computing substrate in which computation emerges from geometric equilibration rather than instruction execution. All parameters derive fro…
  datacite John Drayton 2026 置信度 0.66 silicon-on-sapphireSOSPVDF-TrFESiC defectsD4 lattice
• D4VCA Stage 2 Prototype: Fabrication Specification for the 10×-Scaled Silicon-on-Sapphire Strain Computing Substrate
  Complete fabrication specification for the Stage 2 prototype of the D4 Volumetric Cognitive Architecture — a strain-based computing substrate in which computation emerges from geometric equilibration rather than instruction execution. All parameters derive fro…
  datacite John Drayton 2026 置信度 0.66 silicon-on-sapphireSOSPVDF-TrFESiC defectsD4 lattice
• On the Theory of Electronic Acceleration for EUV Lithography
  Current EUV lithography techniques are fundamentally limiting in their efficiency, scope and theoretical ceilings. Synthesis of extreme UV photonic light from plasma forms, among others, is cost-inefficient and wasteful. Therefore, I propose a more fundamental…
  datacite Lay, Ethan 2026 置信度 0.66
• On the Theory of Electronic Acceleration for EUV Lithography
  Current EUV lithography techniques are fundamentally limiting in their efficiency, scope and theoretical ceilings. Synthesis of extreme UV photonic light from plasma forms, among others, is cost-inefficient and wasteful. Therefore, I propose a more fundamental…
  datacite Lay, Ethan 2026 置信度 0.66
• Consciousness in Silicon: The Industrial Proof — Light, Masks, and the Symmetry Breaking Already Happening at Planetary Scale
  This paper demonstrates that the semiconductor fabrication process constitutes an industrial-scale proof of informational symmetry breaking as a mechanism for consciousness emergence. Related to prior work on the Infinite Wave Function and Informational Symmet…
  datacite Blanc, Jérémy 2026 置信度 0.66 informational symmetry breakingconsciousnesssiliconEUV lithographyintegrated information theory
• RFE LITHO 001
  ASML's extreme ultraviolet lithography machines are the single greatest chokepoint in global semiconductor manufacturing — every chip below 7nm requires ASML EUV, 100% market share, $350 million per machine, and export controls enforced by the Netherlands, Uni…
  datacite Christopher Love 2026 置信度 0.66
• RFE LITHO 001
  ASML's extreme ultraviolet lithography machines are the single greatest chokepoint in global semiconductor manufacturing — every chip below 7nm requires ASML EUV, 100% market share, $350 million per machine, and export controls enforced by the Netherlands, Uni…
  datacite Christopher Love 2026 置信度 0.66
• Performance of Extreme Ultraviolet Coherent Scattering Microscope.
  For the successful implementation of extreme ultraviolet lithography (EUVL) into high-volume manufacturing, the development of a novel structure mask for resolution improvement is essential. In this paper, coherent scattering microscopy (CSM) is introduced as …
  pubmed Kim YW, Woo DG, Ahn J 2019 Oct 1 置信度 0.82
• Line-Edge Roughness Stochastics for 5-nm Pattern Formation in the Extreme Ultraviolet Lithography.
  The extreme ultraviolet (EUV) lithography has the potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, but faces a number of persistent challenges. At the 5-nm technology node, a precise process simulator with nanometer accuracy will …
  pubmed Kim SK 2019 Aug 1 置信度 0.82
• Fast and easy fabrication methodology of Fresnel zone plates for the extreme ultraviolet and soft x-ray regions.
  Zone plate design and efficient methods for the fabrication of zone plates for extreme ultraviolet (EUV) and soft x-ray applications in a newly developed scanning reflection microscope are presented. Based on e-beam lithography, three types of transmission zon…
  pubmed Schümmer A, Mertins HC, Schneider CM, Adam R 等 2019 Feb 1 置信度 0.82
• Tin, The Enabler-Hydrogen Diffusion into Ruthenium.
  Hydrogen interaction with ruthenium is of particular importance for the ruthenium-capped multilayer reflectors used in extreme ultraviolet (EUV) lithography. Hydrogen causes blistering, which leads to a loss of reflectivity. This problem is aggravated by tin. …
  pubmed Onwudinanti C, Tranca I, Morgan T, Tao S 2019 置信度 0.82
• Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist.
  Organotin photoresists have shown promise for next-generation lithography because of their high extreme ultraviolet (EUV) absorption cross sections, their radiation sensitive chemistries, and their ability to enable high-resolution patterning. To better unders…
  pubmed Frederick RT, Diulus JT, Hutchison DC, Nyman M 等 2019 Jan 30 置信度 0.82
• Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters.
  Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with…
  pubmed Diulus JT, Frederick RT, Li M, Hutchison DC 等 2019 Jan 16 置信度 0.82
• Fundamental understanding of chemical processes in extreme ultraviolet resist materials.
  New photoresists are needed to advance extreme ultraviolet (EUV) lithography. The tailored design of efficient photoresists is enabled by a fundamental understanding of EUV induced chemistry. Processes that occur in the resist film after absorption of an EUV p…
  pubmed Kostko O, Xu B, Ahmed M, Slaughter DS 等 2018 Oct 21 置信度 0.82
• Angular and Spectral Bandwidth of Extreme UV Multilayers Near Spacer Material Absorption Edges.
  High resolution imaging systems for EUV range are based on multilayer optics. Current generation of EUV lithography uses broadband Sn LPP sources, which requires broadband mirrors to fully utilize the source power. On the other hand, there always remains a pos…
  pubmed Zameshin AA, Yakshin AE, Chandrasekaran A, Bijkerk F 2019 Jan 1 置信度 0.82
• High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography.
  Fresnel zone plates (FZP) are diffractive photonic devices used for high-resolution imaging and lithography at short wavelengths. Their fabrication requires nano-machining capabilities with exceptional precision and strict tolerances such as those enabled by m…
  pubmed Keskinbora K, Sanli UT, Baluktsian M, Grévent C 等 2018 置信度 0.82
• Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability.
  Extreme ultraviolet interference lithography (EUV-IL) is used to manufacture topographical guiding patterns to direct the self-assembly of block copolymers. High-accuracy silicon oxide-like patterns with trenches ranging from 68 nm to 117 nm width are fabricat…
  pubmed Gottlieb S, Kazazis D, Mochi I, Evangelio L 等 2018 Sep 7 置信度 0.82
• Impact of Plasmonic Parameters on 7-nm Patterning in Plasmonic Computational Lithography.
  For the wavelength reduction to overcome the diffraction limit of the optical lithography, the surface plasmon lithography (SPL) has lower cost and simpler system configuration than the extreme ultraviolet (EUV) lithography. In this paper, for the below 10-nm …
  pubmed Kim SK 2018 Oct 1 置信度 0.82
• Changes in the near edge x-ray absorption fine structure of hybrid organic-inorganic resists upon exposure.
  We report on the near edge x-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and trans…
  pubmed Fallica R, Watts B, Rösner B, Della Giustina G 等 2018 Sep 7 置信度 0.82
• Beam drift and partial probe coherence effects in EUV reflective-mode coherent diffractive imaging.
  While the industrial implementation of extreme ultraviolet lithography for upcoming technology nodes is becoming ever more realistic, a number of challenges have yet to be overcome. Among them is the need for actinic mask inspection. We report on reflective-mo…
  pubmed Helfenstein P, Rajeev R, Mochi I, Kleibert A 等 2018 Apr 30 置信度 0.82
• Dynamics of Radical Ions of Hydroxyhexafluoroisopropyl-Substituted Benzenes.
  Fluorination of resist materials is an effective method used to enhance the energy deposition of extreme ultraviolet (EUV) light in the fabrication of next-generation semiconductor devices. The dynamics of radical ions are important to understand when consider…
  pubmed Okamoto K, Nomura N, Fujiyoshi R, Umegaki K 等 2017 Dec 14 置信度 0.82
• Low-stress and high-reflectance Mo/Si multilayers for extreme ultraviolet lithography by magnetron sputtering deposition with bias assistance.
  To explore the potential of achieving low-stress and high-reflectance Mo/Si multilayers deposited by conventional magnetron sputtering with bias assistance, we investigated the effects of varying Ar gas pressure, substrate bias voltage, and a bias-assisted Si …
  pubmed Yu B, Jin C, Yao S, Li C 等 2017 Sep 10 置信度 0.82
• Comparison of tool feed influence in CNC polishing between a novel circular-random path and other pseudo-random paths.
  A new category of circular pseudo-random paths is proposed in order to suppress repetitive patterns and improve surface waviness on ultra-precision polished surfaces. Random paths in prior research had many corners, therefore deceleration of the polishing tool…
  pubmed Takizawa K, Beaucamp A 2017 Sep 18 置信度 0.82
• Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources.
  Time-resolved two-dimensional (2D) profiles of electron density (n e ) and electron temperature (T e ) of extreme ultraviolet (EUV) lithography light source plasmas were obtained from the ion components of collective Thomson scattering (CTS) spectra. The highe…
  pubmed Tomita K, Sato Y, Tsukiyama S, Eguchi T 等 2017 Oct 2 置信度 0.82
• Extreme ultraviolet resist materials for sub-7 nm patterning.
  Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's …
  pubmed Li L, Liu X, Pal S, Wang S 等 2017 Aug 14 置信度 0.82
• Alkyltin Keggin Clusters Templated by Sodium.
  Dodecameric (Sn 12 ) and hexameric topologies dominate monoalkyltin-oxo cluster chemistry. Their condensation, triggered by radiation exposure, recently produced unprecedented patterning performance in EUV lithography. A new cluster topology was crystallized f…
  pubmed Saha S, Park DH, Hutchison DC, Olsen MR 等 2017 Aug 14 置信度 0.82
• State-of-the-art Nanofabrication in Catalysis.
  We present recent developments in top-down nanofabrication that have found application in catalysis research. To unravel the complexity of catalytic systems, the design and use of models with control of size, morphology, shape and inter-particle distances is a…
  pubmed Karim W, Tschupp SA, Herranz J, Schmidt TJ 等 2017 置信度 0.82
• Amplitude versus phase effects in extreme ultraviolet lithography mask scattering and imaging.
  It is now well established that extreme ultraviolet (EUV) mask multilayer roughness leads to wafer-plane line-width roughness (LWR) in the lithography process. Analysis and modeling done to date has assumed, however, that the roughness leading to scatter is pr…
  pubmed Naulleau PP, Benk M, Goldberg KA, Gullikson EM 等 2017 Apr 20 置信度 0.82
• Fast resist-activation dosimetry for extreme ultra-violet lithography.
  Due to the rather broad band emission spectrum of the extremely hot plasma in its extreme ultra-violet (EUV) source, an EUV lithography scanner also projects out-of-band vacuum- and deep-UV (OoB V/DUV) light on the photoresist on a wafer. As this type of uncon…
  pubmed Heo J, Xu M, Maas D 2017 Mar 6 置信度 0.82
• High-space resolution imaging plate analysis of extreme ultraviolet (EUV) light from tin laser-produced plasmas.
  With the advent of high volume manufacturing capabilities by extreme ultraviolet lithography, constant improvements in light source design and cost-efficiency are required. Currently, light intensity and conversion efficiency (CE) measurments are obtained by c…
  pubmed Musgrave CS, Murakami T, Ugomori T, Yoshida K 等 2017 置信度 0.82
• Evolution analysis of EUV radiation from laser-produced tin plasmas based on a radiation hydrodynamics model.
  One of fundamental aims of extreme ultraviolet (EUV) lithography is to maximize brightness or conversion efficiency of laser energy to radiation at specific wavelengths from laser produced plasmas (LPPs) of specific elements for matching to available multilaye…
  pubmed Su MG, Min Q, Cao SQ, Sun DX 等 2017 Mar 23 置信度 0.82
• Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography.
  Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has been attributed to statistical fluctuations in the number of photons/electrons arriving at a given nano-regi…
  pubmed Rananavare SB, Morakinyo MK 2017 Feb 12 置信度 0.82
• Extreme Ultraviolet Fractional Orbital Angular Momentum Beams from High Harmonic Generation.
  We investigate theoretically the generation of extreme-ultraviolet (EUV) beams carrying fractional orbital angular momentum. To this end, we drive high-order harmonic generation with infrared conical refraction (CR) beams. We show that the high-order harmonic …
  pubmed Turpin A, Rego L, Picón A, San Román J 等 2017 Mar 10 置信度 0.82
• Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications.
  The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL)…
  pubmed Reddy PG, Pal SP, Kumar P, Pradeep CP 等 2017 Jan 11 置信度 0.82
• High-harmonic generation by field enhanced femtosecond pulses in metal-sapphire nanostructure.
  Plasmonic high-harmonic generation (HHG) drew attention as a means of producing coherent extreme ultraviolet (EUV) radiation by taking advantage of field enhancement occurring in metallic nanostructures. Here a metal-sapphire nanostructure is devised to provid…
  pubmed Han S, Kim H, Kim YW, Kim YJ 等 2016 Oct 10 置信度 0.82
• Thin absorber extreme ultraviolet photomask based on Ni-TaN nanocomposite material.
  We study the use of random nanocomposite material as a photomask absorber layer for the next generation of extreme ultraviolet (EUV) lithography. By introducing nickel nanoparticles (NPs) randomly into a TaN host, the nanocomposite absorber layer can greatly r…
  pubmed Hay D, Bagge P, Khaw I, Sun L 等 2016 Aug 15 置信度 0.82
• Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength.
  Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus trade…
  pubmed Fan D, Wang L, Ekinci Y 2016 Aug 9 置信度 0.82
• Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography.
  For the extreme ultraviolet (EUV) lithography, multilayer (ML) defects such as bump and pit defects can disrupt the phase of reflected field and degrade aerial images on wafer. In this paper, a defect printability and repair simulator (DPRS) is introduced to p…
  pubmed Kim SK 2016 May 置信度 0.82
• Design of anamorphic magnification high-numerical aperture objective for extreme ultraviolet lithography by curvatures combination method.
  An anamorphic magnification extreme ultraviolet (EUV) lithographic objective could increase the size of the exposure field at a wafer in the orthogonal scanning direction to improve the throughput of the lithographic system. In this paper, we present a curvatu…
  pubmed Liu Y, Li Y, Cao Z 2016 Jun 20 置信度 0.82
• Wide-field broadband extreme ultraviolet transmission ptychography using a high-harmonic source.
  High-harmonic generation (HHG) provides a laboratory-scale source of coherent radiation ideally suited to lensless coherent diffractive imaging (CDI) in the EUV and x-ray spectral region. Here we demonstrate transmission extreme ultraviolet (EUV) ptychography,…
  pubmed Baksh PD, Odstrčil M, Kim HS, Boden SA 等 2016 Apr 1 置信度 0.82
• Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist.
  Given the importance of complex nanofeatures in the filed of micro-/nanoelectronics particularly in the area of high-density magnetic recording, photonic crystals, information storage, micro-lens arrays, tissue engineering and catalysis, the present work demon…
  pubmed Ghosh S, Satyanarayana VS, Pramanick B, Sharma SK 等 2016 Mar 15 置信度 0.82
• Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography.
  In addition to the development of extreme ultraviolet lithography (EUVL), studies on beyond extreme ultraviolet lithography (BEUVL), which uses radiation with a wavelength of 6.7 nm, are in progress for their application in high-volume manufacturing. The BEUV …
  pubmed Hong S, Kim JS, Lee JU, Lee SM 等 2015 Nov 置信度 0.82
• Invited Article: Progress in coherent lithography using table-top extreme ultraviolet lasers.
  Compact (table top) lasers emitting at wavelengths below 50 nm had expanded the spectrum of applications in the extreme ultraviolet (EUV). Among them, the high-flux, highly coherent laser sources enabled lithographic approaches with distinctive characteristics…
  pubmed Li W, Urbanski L, Marconi MC 2015 置信度 0.82
• Quantitative phase retrieval with arbitrary pupil and illumination.
  We present a general algorithm for combining measurements taken under various illumination and imaging conditions to quantitatively extract the amplitude and phase of an object wave. The algorithm uses the weak object transfer function, which incorporates arbi…
  pubmed Claus RA, Naulleau PP, Neureuther AR, Waller L 2015 Oct 5 置信度 0.82
• Extreme ultraviolet Talbot interference lithography.
  Periodic nanopatterns can be generated using lithography based on the Talbot effect or optical interference. However, these techniques have restrictions that limit their performance. High resolution Talbot lithography is limited by the very small depth of focu…
  pubmed Li W, Marconi MC 2015 Oct 5 置信度 0.82
• Extreme ultraviolet proximity lithography for fast, flexible and parallel fabrication of infrared antennas.
  We present a method for fabrication of large arrays of nano-antennas using extreme-ultraviolet (EUV) illumination. A discharge-produced plasma source generating EUV radiation around 10.88 nm wavelength is used for the illumination of a photoresist via a mask i…
  pubmed Kunkemöller G, Mass TW, Michel AK, Kim HS 等 2015 Oct 5 置信度 0.82
• Gradient-based inverse extreme ultraviolet lithography.
  Extreme ultraviolet (EUV) lithography is the most promising successor of current deep ultraviolet (DUV) lithography. The very short wavelength, reflective optics, and nontelecentric structure of EUV lithography systems bring in different imaging phenomena into…
  pubmed Ma X, Wang J, Chen X, Li Y 等 2015 Aug 20 置信度 0.82
• Upgrade of beamline BL08B at Taiwan Light Source from a photon-BPM to a double-grating SGM beamline.
  During the last 20 years, beamline BL08B has been upgraded step by step from a photon beam-position monitor (BPM) to a testing beamline and a single-grating beamline that enables experiments to record X-ray photo-emission spectra (XPS) and X-ray absorption spe…
  pubmed Yuh JY, Lin SW, Huang LJ, Fung HS 等 2015 Sep 置信度 0.82
• Large-scale freestanding nanometer-thick graphite pellicles for mass production of nanodevices beyond 10 nm.
  Extreme ultraviolet lithography (EUVL) has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10 nm. We present a new pellicle material, nanometer-thick graphite film (NGF), which shows an extrem…
  pubmed Kim SG, Shin DW, Kim T, Kim S 等 2015 Sep 21 置信度 0.82
• Selective Fragmentation of Radiation-Sensitive Novel Polymeric Resist Materials by Inner-Shell Irradiation.
  Two key concepts in extreme ultraviolet lithography (EUVL) are important for it to be a candidate for the mass production of future integrated circuits: the polymer formulation and the photofragmentation process. In this work, both concepts were carefully stud…
  pubmed Chagas GR, Satyanarayana VS, Kessler F, Belmonte GK 等 2015 Aug 5 置信度 0.82
• Photoluminescence-based detection of particle contamination on extreme ultraviolet reticles.
  Here, we propose a comparison-free inspection technique to detect particle contamination on the reticle of extreme ultraviolet (EUV) lithography systems, based on the photoluminescence spectral characteristics of the contaminant particles and their elemental c…
  pubmed Gao A, Rizo PJ, Scaccabarozzi L, Lee CJ 等 2015 置信度 0.82
• Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.
  Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-ed…
  pubmed Ashby PD, Olynick DL, Ogletree DF, Naulleau PP 2015 Oct 14 置信度 0.82
• Interferometric broadband Fourier spectroscopy with a partially coherent gas-discharge extreme ultraviolet light source.
  Extreme ultraviolet (EUV) spectroscopy is a powerful tool for studying fundamental processes in plasmas as well as for spectral characterization of EUV light sources and EUV optics. However, a simultaneous measurement covering a broadband spectral range is dif…
  pubmed Rudolf D, Bußmann J, Odstrčil M, Dong M 等 2015 Jun 15 置信度 0.82