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• Fabrication of Thiol-Ene "Clickable" Copolymer-Brush Nanostructures on Polymeric Substrates via Extreme Ultraviolet Interference Lithography.
  We demonstrate a new approach to grafting thiol-reactive nanopatterned copolymer-brush structures on polymeric substrates by means of extreme ultraviolet (EUV) interference lithography. The copolymer brushes were designed to contain maleimide functional groups…
  pubmed Dübner M, Gevrek TN, Sanyal A, Spencer ND 等 2015 Jun 3 置信度 0.82
• Design of three-mirror illumination system with free-form fly's eye for extreme ultraviolet lithography.
  The low source power is one of the major challenges that hinder the extreme ultraviolet lithography from high volume manufacturing. To alleviate the source development pressure, a high-efficiency illumination system with three mirrors is proposed, based on the…
  pubmed Mei Q, Li Y 2015 Mar 10 置信度 0.82
• High-resolution and large-area nanoparticle arrays using EUV interference lithography.
  Well-defined model systems are needed for better understanding of the relationship between optical, electronic, magnetic, and catalytic properties of nanoparticles and their structure. Chemical synthesis of metal nanoparticles results in large size and shape d…
  pubmed Karim W, Tschupp SA, Oezaslan M, Schmidt TJ 等 2015 Apr 28 置信度 0.82
• Actuation profiles to form Zernike shapes with a thermal active mirror.
  In EUV lithography, the absorption of EUV light causes wavefront distortion that deteriorates the imaging process. An adaptive optics system has been developed ["Adaptive optics to counteract thermal aberrations," Ph.D. thesis (TU Delft, 2013)] to correct for …
  pubmed Saathof R, Schutten GJ, Spronck JW, Munnig Schmidt RH 2015 Jan 15 置信度 0.82
• Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond.
  All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is &#x22…
  pubmed Mojarad N, Hojeij M, Wang L, Gobrecht J 等 2015 Mar 7 置信度 0.82
• Light-responsive polymer surfaces via postpolymerization modification of grafted polymer-brush structures.
  Light-induced, spatially well-defined, reversible switching of surface properties enables the creation of remote-controlled smart surfaces. We have taken advantage of the unique high-resolution structuring capabilities of extreme ultraviolet (EUV) interference…
  pubmed Dübner M, Spencer ND, Padeste C 2014 Dec 16 置信度 0.82
• Single spherical mirror optic for extreme ultraviolet lithography enabled by inverse lithography technology.
  Traditionally, aberration correction in extreme ultraviolet (EUV) projection optics requires the use of multiple lossy mirrors, which results in prohibitively high source power requirements. We analyze a single spherical mirror projection optical system where …
  pubmed Scranton G, Bhargava S, Ganapati V, Yablonovitch E 2014 Oct 20 置信度 0.82
• Boundary integral spectral element method analyses of extreme ultraviolet multilayer defects.
  Extreme ultraviolet (EUV) lithography is an emerging technology for high-density semiconductor patterning. Multilayer distortion caused by mask defects is regarded as one of the critical challenges of EUV lithography. To simulate the influence of the defected …
  pubmed Niu J, Luo M, Fang Y, Liu QH 2014 Oct 1 置信度 0.82
• A hemispherical Langmuir probe array detector for angular resolved measurements on droplet-based laser-produced plasmas.
  In this work, a new diagnostic tool for laser-produced plasmas (LPPs) is presented. The detector is based on a multiple array of six motorized Langmuir probes. It allows to measure the dynamics of a LPP in terms of charged particles detection with particular a…
  pubmed Gambino N, Brandstätter M, Rollinger B, Abhari R 2014 Sep 置信度 0.82
• Corrective finishing of extreme ultraviolet photomask blanks by precessed bonnet polisher.
  The progressive transition from Excimer to extreme ultraviolet (EUV) lithography is driving a need for flatter and smoother photomask blanks. It is, however, proving difficult to meet the next-generation specification with the conventional chemical mechanical …
  pubmed Beaucamp A, Namba Y, Charlton P 2014 May 10 置信度 0.82
• Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography.
  We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporat…
  pubmed Wang L, Kirk E, Wäckerlin C, Schneider CW 等 2014 Jun 13 置信度 0.82
• Full field analysis of critical dimension uniformity due to focal variation for contact features in extreme ultraviolet lithography.
  Extreme ultraviolet (EUV) lithography is the leading candidate for 22 nm node technology and beyond. This research studies the influence of focal contributor on critical dimension (CD) variation in the EUV lithography and calculates the CD sensitivity to focal…
  pubmed Kuo HF, Frederick 2014 Mar 置信度 0.82
• Spectral purification and infrared light recycling in extreme ultraviolet lithography sources.
  We present the design of a novel collector mirror for laser produced plasma (LPP) light sources to be used in extreme ultraviolet (EUV) lithography. The design prevents undesired infrared (IR) drive laser light, reflected from the plasma, from reaching the exi…
  pubmed Bayraktar M, van Goor FA, Boller KJ, Bijkerk F 2014 Apr 7 置信度 0.82
• A 2 D high accuracy slope measuring system based on a Stitching Shack Hartmann Optical Head.
  We present a 2D Slope measuring System based on a Stitching Shack Hartmann Optical Head (SSH-OH) aiming to perform high accuracy optical metrology for X-ray mirrors. This system was developed to perform high-accuracy automated metrology for extremely high qual…
  pubmed Idir M, Kaznatcheev K, Dovillaire G, Legrand J 等 2014 Feb 10 置信度 0.82
• Radiation-sensitive novel polymeric resist materials: iterative synthesis and their EUV fragmentation studies.
  Polymerization of (4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate (MAPDST), as a key monomer containing the radiation sensitive sulfonium functionality, with various other monomers such as methyl methacrylate (MMA), 4-carboxy styrene (STYCOOH), N-vinyl ca…
  pubmed Satyanarayana VS, Kessler F, Singh V, Scheffer FR 等 2014 Mar 26 置信度 0.82
• Pinhole diffraction holography for fabrication of high-resolution Fresnel zone plates.
  Fresnel zone plates (FZPs) play an essential role in high spatial resolution x-ray imaging and analysis of materials in many fields. These diffractive lenses are commonly made by serial writing techniques such as electron beam or focused ion beam lithography. …
  pubmed Sarkar SS, Solak HH, David C, van der Veen JF 2014 Jan 27 置信度 0.82
• Structured Mo/Si multilayers for IR-suppression in laser-produced EUV light sources.
  Laser produced plasma sources are considered attractive for high-volume extreme-ultraviolet (EUV) lithography because of their high power at the target wavelength 13.5 nm. However, besides the required EUV light, a large amount of infrared (IR) light from the …
  pubmed Trost M, Schröder S, Duparré A, Risse S 等 2013 Nov 18 置信度 0.82
• Binary mask designs with single- and double-layer absorber stacks for extreme ultraviolet lithography and actinic inspection.
  In this study, we propose binary mask (BIM) designs with single- and double-layer absorber stacks with high optical contrast at a wavelength of 13.5 nm for use in extreme ultraviolet lithography (EUVL) and actinic defect inspection. The optimum thickness …
  pubmed Park S, Lim JD, Peranantham P, Kang HY 等 2014 Feb 1 置信度 0.82
• Thermal probe maskless lithography for 27.5 nm half-pitch Si technology.
  Thermal scanning probe lithography is used for creating lithographic patterns with 27.5 nm half-pitch line density in a 50 nm thick high carbon content organic resist on a Si substrate. The as-written patterns in the poly phthaladehyde thermal resist layer hav…
  pubmed Cheong LL, Paul P, Holzner F, Despont M 等 2013 Sep 11 置信度 0.82
• Covalent attachment of diamondoid phosphonic acid dichlorides to tungsten oxide surfaces.
  Diamondoids (nanometer-sized diamond-like hydrocarbons) are a novel class of carbon nanomaterials that exhibit negative electron affinity (NEA) and strong electron-phonon scattering. Surface-bound diamondoid monolayers exhibit monochromatic photoemission, a un…
  pubmed Li FH, Fabbri JD, Yurchenko RI, Mileshkin AN 等 2013 Aug 6 置信度 0.82
• Modeling of line roughness and its impact on the diffraction intensities and the reconstructed critical dimensions in scatterometry.
  We investigate the impact of line-edge and line-width roughness (LER, LWR) on the measured diffraction intensities in angular resolved extreme ultraviolet (EUV) scatterometry for a periodic line-space structure designed for EUV lithography. LER and LWR with ty…
  pubmed Gross H, Henn MA, Heidenreich S, Rathsfeld A 等 2012 Oct 20 置信度 0.82
• [Characteristics of extreme ultraviolet emission from tin plasma using CO2 laser for lithography].
  The extreme ultraviolet (EUV) emission characteristics from Sn plasma for lithography produced by a pulse discharge CO2 laser was investigated under different conditions. Extreme ultraviolet spectral measurements were made throughout the wavelength region of 6…
  pubmed Wu T, Wang XB, Wang SY, Lu PX 2012 Jul 置信度 0.82
• Wavelength separation from extreme ultraviolet mirrors using phaseshift reflection.
  A generic design and fabrication scheme of Mo/Si multilayer-grating phaseshift reflector systems is reported. Close to optimized extreme ultraviolet (EUV, λ=13.5 nm) reflectance values up to 64% are demonstrated, while the diffractive properties can be e…
  pubmed van den Boogaard AJ, van Goor FA, Louis E, Bijkerk F 2012 Jan 15 置信度 0.82
• Highly selective etching of SnO2 absorber in binary mask structure for extreme ultra-violet lithography.
  Among the core EUVL (extreme ultra-violet lithography) technologies for nanoscale patterning below the 30 nm node for Si chip manufacturing, new materials and fabrication processes for high-performance EUVL masks are of considerable importance due to the use o…
  pubmed Lee SJ, Jung CY, Park SJ, Hwangbo CK 等 2012 Apr 置信度 0.82
• Optical performance of extreme ultraviolet lithography mask with an indium tin oxide absorber.
  In this study, we propose a new extreme ultraviolet (EUV) binary mask with an indium tin oxide (ITO) absorber. The optical constant of ITO film at 13.5 nm wavelength in the EUV regime was determined by means of X-ray reflectivity measurements and the chemical …
  pubmed Kang HY, Park S, Hwangbo CK, Seo HS 等 2012 Apr 置信度 0.82
• Extreme ultra-violet resists development concepts and performances.
  Recently published experimental results indicate that current extreme ultra-violet lithography (EUVL) patterning process seems to be very hard to meet the device manufacturing specification goals, such as resolution, line-width roughness, and sensitivity (RLS)…
  pubmed Lee JW, Kim J, Kim J 2012 Apr 置信度 0.82
• Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode.
  Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamle…
  pubmed Wang L, Solak HH, Ekinci Y 2012 Aug 3 置信度 0.82
• Actinic microscope for extreme ultraviolet lithography photomask inspection and review.
  Two dual-configuration extreme ultraviolet (EUV, 13.5nm wavelength) optical designs are described as a means to overcome principal EUV photomask metrology challenges. Semiconductor industry-wide efforts to define performance requirements and create standalone …
  pubmed Goldstein M, Naulleau P 2012 Jul 2 置信度 0.82
• Infrared antireflective filtering for extreme ultraviolet multilayer Bragg reflectors.
  An extreme ultraviolet multilayer mirror with an integrated spectral filter for the IR range is presented and experimentally evaluated. The system consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase…
  pubmed Medvedev VV, Yakshin AE, van de Kruijs RW, Krivtsun VM 等 2012 Apr 1 置信度 0.82
• Large area extreme-UV lithography of graphene oxide via spatially resolved photoreduction.
  The ability to pattern graphene over large areas with nanometer resolution is the current request for nanodevice fabrication at the industrial scale. Existing methods do not match high throughput with nanometer resolution. We propose a high-throughput resistle…
  pubmed Prezioso S, Perrozzi F, Donarelli M, Bisti F 等 2012 Mar 27 置信度 0.82
• Fabrication of quasiperiodic nanostructures with EUV interference lithography.
  We demonstrate the fabrication and analysis of well-ordered high-resolution quasiperiodic nanostructures with feature sizes down to a few tens of nanometers using extreme ultraviolet interference lithography. A well-controlled mask manufacturing process for pr…
  pubmed Langner A, Päivänranta B, Terhalle B, Ekinci Y 2012 Mar 16 置信度 0.82
• Generation of extreme ultraviolet vortex beams using computer generated holograms.
  We fabricate computer generated holograms for the generation of phase singularities at extreme ultraviolet (EUV) wavelengths using electron beam lithography and demonstrate their ability to generate optical vortices in the nonzero diffraction orders. To this e…
  pubmed Terhalle B, Langner A, Päivänranta B, Guzenko VA 等 2011 Nov 1 置信度 0.82
• Stand-alone diamond binary phase transmission gratings for the EUV band.
  We report on the development of true free-standing phase transmission gratings for the extreme ultraviolet band. An ultra-nanocrystalline, 300 nm thin diamond film on a backside etched silicon wafer is structured by electron-beam lithography to periods of 1 &#…
  pubmed Braig C, Käsebier T, Kley EB, Tünnermann A 2011 Jul 18 置信度 0.82
• Sub-10 nm patterning using EUV interference lithography.
  Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful…
  pubmed Päivänranta B, Langner A, Kirk E, David C 等 2011 Sep 16 置信度 0.82
• Optical modeling of Fresnel zoneplate microscopes.
  Defect free masks remain one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. Progress on this front requires high-performance wavelength-specific metrology of EUV masks, including high-resolution and ae…
  pubmed Naulleau PP, Mochi I, Goldberg KA 2011 Jul 10 置信度 0.82
• Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations.
  In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plane speckle it causes and the resulting line-edge roughness on imaged features. Modelin…
  pubmed Naulleau PP, George SA 2011 Jul 1 置信度 0.82
• Electron-induced interaction of selected hydrocarbons with TiO2 surfaces: the relevance to extreme ultraviolet lithography.
  The aim of this work is to characterize desorption induced by electronic transition processes that affect the reflectivity of TiO2-capped multilayer mirrors used in extreme ultraviolet (EUV) lithography. A low energy electron beam is employed to mimic excitati…
  pubmed Yakshinskiy BV, Zalkind S, Bartynski RA, Caudillo R 2010 Mar 3 置信度 0.82
• Patterning of self-assembled pentacene nanolayers by extreme ultraviolet-induced three-dimensional polymerization.
  Most researchers expect extreme ultraviolet lithography (EUVL) to be used to create patterns below 32 nm in semiconductor devices. An ultrathin EUV photoresist (PR) layer a few nanometers thick is required to further reduce the minimum feature size. Here, we s…
  pubmed Jee HG, Hwang HN, Han JH, Lim J 等 2010 Sep 28 置信度 0.82
• Formation and decay of fluorobenzene radical anions affected by their isomeric structures and the number of fluorine atoms.
  Aryl fluoride has attracted much attention as a resist component for extreme ultraviolet (EUV) lithography, because of the high absorption cross section of fluorine for EUV photons; however, less is known about electron attachment to fluorobenzene (FBz) and th…
  pubmed Higashino S, Saeki A, Okamoto K, Tagawa S 等 2010 Aug 12 置信度 0.82
• Extreme ultraviolet laser-based table-top aerial image metrology of lithographic masks.
  We have realized the first demonstration of a table-top aerial imaging microscope capable of characterizing pattern and defect printability in extreme ultraviolet lithography masks. The microscope combines the output of a 13.2 nm wavelength, table-top, plasma-…
  pubmed Brizuela F, Carbajo S, Sakdinawat A, Alessi D 等 2010 Jul 5 置信度 0.82
• Direct formation of ZnO nanostructures by chemical solution deposition and EUV exposure.
  The development of effective methods for the fabrication of ZnO nanostructures is important for the use of this semiconductor material with interesting optical and electronic properties. Chemical solution deposition methods have been demonstrated for creating …
  pubmed Auzelyte V, Sigg H, Schmitt B, Solak HH 2010 May 28 置信度 0.82
• Flexible CO2 laser system for fundamental research related to an extreme ultraviolet lithography source.
  A CO(2) laser system with flexible parameters was developed for fundamental research related to an extreme ultraviolet (EUV) lithography source. The laser is a master oscillator and power amplifier (MOPA) system, consisting of a master oscillator, an externall…
  pubmed Tao Y, Tillack MS, Amin N, Burdt RA 等 2009 Dec 置信度 0.82
• Extreme ultraviolet multilayer mirror with near-zero IR reflectance.
  We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation that has low reflectance for IR radiation at 10.6 mum wavelength. The mirror is based on a multilayer coating comprising alternating layers of diamondlike carbon and silicon, for whi…
  pubmed Soer WA, Gawlitza P, van Herpen MM, Jak MJ 等 2009 Dec 1 置信度 0.82
• Non-astigmatic imaging with matched pairs of spherically bent crystals or reflectors.
  This paper defines the exact conditions for the application of a previously proposed, general, non-astigmatic, imaging scheme, consisting of a matched pair of spherically bent crystals or reflectors, to x rays. These conditions lead to two specific experimenta…
  pubmed Bitter M, Hill KW, Jones F, Scott S 2009 置信度 0.82
• Sorption of CO2 and a CO2 compatible salt into an extreme ultraviolet photoresist film on a SiO2 substrate.
  The development of standard extreme ultraviolet (EUV) lithography photoresists with a CO2 compatible salt (CCS) and supercritical carbon dioxide (scCO2) solution has several advantages over typical trimethylammonium hydroxide development, including reduced ima…
  pubmed Zweber AE, Wagner M, Carbonell RG 2009 Jul 23 置信度 0.82
• Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography.
  As critical dimensions for leading-edge semiconductor devices shrink, the line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultravi…
  pubmed Naulleau PP 2009 Jun 20 置信度 0.82
• Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy.
  A photoemission electron microscope based on a new contrast mechanism "interference contrast" is applied to characterize extreme ultraviolet lithography mask blank defects. Inspection results show that positioning of interference destructive condition (node of…
  pubmed Lin J, Weber N, Escher M, Maul J 等 2008 Sep 29 置信度 0.82
• High performance EUV multilayer structures insensitive to capping layer optical parameters.
  We have designed and tested a-periodic multilayer structures containing protective capping layers in order to obtain improved stability with respect to any possible changes of the capping layer optical properties (due to oxidation and contamination, for exampl…
  pubmed Pelizzo MG, Suman M, Monaco G, Nicolosi P 等 2008 Sep 15 置信度 0.82
• Electric and magnetic resonances in arrays of coupled gold nanoparticle in-tandem pairs.
  We present an experimental and theoretical study on the optical properties of arrays of gold nanoparticle in-tandem pairs (nanosandwiches). The well-ordered Au pairs with diameters down to 35 nm and separation distances down to 10 nm were fabricated using extr…
  pubmed Ekinci Y, Christ A, Agio M, Martin OJ 等 2008 Aug 18 置信度 0.82
• Absolute sensitivity calibration of extreme ultraviolet photoresists.
  One of the major challenges facing the commercialization of extreme ultraviolet (EUV) lithography remains simultaneously achieving resist sensitivity, line-edge roughness, and resolution requirement. Sensitivity is of particular concern owing to its direct imp…
  pubmed Naulleau PP, Gullikson EM, Aquila A, George S 等 2008 Jul 21 置信度 0.82
• 4X reduction extreme ultraviolet interferometric lithography.
  We report the initial results from a 4X reduction interferometric lithography technique using extreme ultraviolet (EUV) radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. We ha…
  pubmed Isoyan A, Wüest A, Wallace J, Jiang F 等 2008 Jun 9 置信度 0.82
• High-harmonic generation by resonant plasmon field enhancement.
  High-harmonic generation by focusing a femtosecond laser onto a gas is a well-known method of producing coherent extreme-ultraviolet (EUV) light. This nonlinear conversion process requires high pulse intensities, greater than 10(13) W cm(-2), which are not dir…
  pubmed Kim S, Jin J, Kim YJ, Park IY 等 2008 Jun 5 置信度 0.82
• In-situ electrical addressing of one-dimensional gold nanoparticle assemblies.
  Substrates with 1-dimensional nanosize grooves were prepared using extreme-ultraviolet interference lithography (EUV-IL), wherein gold nanoparticles were self-assembled to form 1-dimensional structures. To measure the electrical properties of gold nanoparticle…
  pubmed Blech K, Noyong M, Juillerat F, Nakayama T 等 2008 Jan 置信度 0.82
• Time exposure performance of Mo-Au Gibbsian segregating alloys for extreme ultraviolet collector optics.
  Successful implementation of extreme ultraviolet (EUV) lithography depends on research and progress toward minimizing collector optics degradation from intense plasma erosion and debris deposition. Thus studying the surface degradation process and implementing…
  pubmed Qiu H, Srivastava SN, Thompson KC, Neumann MJ 等 2008 May 1 置信度 0.82
• Tolerancing of diffraction-limited Kirkpatrick-Baez synchrotron beamline optics for extreme-ultraviolet metrology.
  The recent interest in extreme-ultraviolet (EUV) lithography has led to the development of an array of at-wavelength metrologies implemented on synchrotron beamlines. These beamlines commonly use Kirkpatrick-Baez (K-B) systems consisting of two perpendicular, …
  pubmed Naulleau PP, Goldberg KA, Batson PJ, Jeong S 等 2001 Aug 1 置信度 0.82
• At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems.
  The extreme-ultraviolet (EUV) phase-shifting point-diffraction interferometer (PS/PDI) has recently been developed to provide high-accuracy wave-front characterization critical to the development of EUV lithography systems. Here we describe an enhanced impleme…
  pubmed Naulleau P, Goldberg KA, Gullikson EM, Bokor J 2000 Jun 10 置信度 0.82
• Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography.
  Multilayer-coated Zerodur optics are expected to play a pivotal role in an extreme-ultraviolet (EUV) lithography tool. Zerodur is a multiphase, multicomponent material that is a much more complicated substrate than commonly used single-crystal Si or fused-sili…
  pubmed Mirkarimi PB, Bajt S, Wall MA 2000 Apr 1 置信度 0.82
• Extreme-ultraviolet phase-shifting point-diffraction interferometer: a wave-front metrology tool with subangstrom reference-wave accuracy.
  The phase-shifting point-diffraction interferometer (PS/PDI) was recently developed and implemented at Lawrence Berkeley National Laboratory to characterize extreme-ultraviolet (EUV) projection optical systems for lithography. Here we quantitatively characteri…
  pubmed Naulleau PP, Goldberg KA, Lee SH, Chang C 等 1999 Dec 11 置信度 0.82
• Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas.
  Extreme ultraviolet lithography (EUVL) is considered as the most promising solution at and below dynamic random access memory 32 nm half pitch among the next generation lithography, and EUV light sources with high output power and sufficient lifetime are cruci…
  pubmed Zhao HY, Zhao HW, Sun LT, Zhang XZ 等 2008 Feb 置信度 0.82
• Sensitivity study of two high-throughput resolution metrics for photoresists.
  The resolution of chemically amplified resists is becoming an increasing concern, especially for lithography in the extreme ultraviolet (EUV) regime. Large-scale screening is currently under way to identify resist platforms that can support the demanding speci…
  pubmed Anderson CN, Naulleau PP 2008 Jan 1 置信度 0.82
• Network search method in the design of extreme ultraviolet lithographic objectives.
  The merit function space of mirror system for extreme ultraviolet (EUV) lithography is studied. Local minima situated in the multidimensional optical merit function space are connected via links that contain saddle points and form a network. We present network…
  pubmed Marinescu O, Bociort F 2007 Dec 10 置信度 0.82
• Fabrication of molecular nanotemplates in self-assembled monolayers by extreme-ultraviolet-induced chemical lithography.
  Extreme-UV interference lithography (EUV-IL) is applied to create chemical nanopatterns in self-assembled monolayers (SAMs) of 4'-nitro-1,1'-biphenyl-4-thiol (NBPT) on gold. X-ray photoelectron spectroscopy shows that EUV irradiation induces both the conversio…
  pubmed Turchanin A, Schnietz M, El-Desawy M, Solak HH 等 2007 Dec 置信度 0.82
• Three-dimensional Si/Ge quantum dot crystals.
  Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots t…
  pubmed Grützmacher D, Fromherz T, Dais C, Stangl J 等 2007 Oct 置信度 0.82
• Wavefront measurement interferometry at the operational wavelength of extreme-ultraviolet lithography.
  Two basic types of interferometer, a point diffraction interferometer (PDI) and a lateral shearing interferometer (LSI) suitable for operation in the extreme-ultraviolet (EUV) wavelength region, are described. To address the challenges of wavefront measurement…
  pubmed Zhu Y, Sugisaki K, Okada M, Otaki K 等 2007 Sep 20 置信度 0.82
• At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.
  A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of prog…
  pubmed Lin J, Weber N, Maul J, Hendel S 等 2007 Jul 1 置信度 0.82
• Sub-diffraction-limited multilayer coatings for the 0.3 numerical aperture micro-exposure tool for extreme ultraviolet lithography.
  Multilayer coating results are discussed for the primary and secondary mirrors of the micro-exposure tool (MET): a 0.30 NA lithographic imaging system with a 200 microm x 600 microm field of view at the wafer plane, operating in the extreme ultraviolet (EUV) r…
  pubmed Soufli R, Hudyma RM, Spiller E, Gullikson EM 等 2007 Jun 20 置信度 0.82
• Development of pellicle manufacturing technology for high-power EUV lithography
  crossref Nam Hee Lee, Kwanhwi Jung, Byounghoon Seung, Jungyeon Kim 等 2025-11-06T21:59:18Z 置信度 0.70
• Negative-tone imaging (NTI) process and material technology for ArF immersion and EUV lithography
  crossref H. Tsubaki 2025-12-03T19:59:44Z 置信度 0.70
• Exploration of alternative resist materials for EUV lithography
  Abstract A ladder-type silsesquioxane (SQ)-based material (containing organic functional groups) which utilizes direct photo-crosslinking as its main reaction mechanism for patterning, was developed and investigated for application in extreme ultraviolet (EUV)…
  crossref Julius Joseph Santillan, Toshiro Itani 2025-02-26T22:48:38Z 置信度 0.70
• Extending logic metal printing with sub-resolution grating in high and hyper NA EUV lithography
  crossref Inhwan Lee, Joern-Holger Franke, Vicky Philipsen, Kurt G. Ronse 等 2025-04-22T18:33:00Z 置信度 0.70
• Research and Applications of EUV Lithography in Silicon Photonics
  Extreme Ultraviolet (EUV) lithography is a photolithography technology used mainly in semiconductor manufacturing, especially for advanced nodes at and below 5nm. This technology holds promise for future adoption in photonic integrated circuits like silicon ph…
  crossref Heyi Zhang 2025-08-22T02:37:18Z 置信度 0.70
• Computational metrology method of collector mirror for EUV lithography
  crossref Yunyi Chen, Zexu Liu, Nan Lin 2025-03-12T14:35:44Z 置信度 0.70
• Current Status and Trends in EUV and NIL Lithography Process Development
  Lithography technology is a core process in semiconductor manufacturing. As device dimensions continue to shrink, the limitations of traditional deep ultraviolet lithography in terms of resolution and cost have become increasingly apparent. EUV and NIL have be…
  crossref Zeheng Wang 2025-12-19T11:22:09Z 置信度 0.70
• The Era of High-NA EUV Lithography Has Arrived!
  crossref Harry Levinson 2025-02-13T08:10:22Z 置信度 0.70
• Understanding the impact of the EUV photon absorption distribution in a patterned EUV resist and its lithographic performance
  crossref Danilo De Simone, Vicky Philipsen, Alessandro Vaglio Pret, Anatoly Burov 2025-11-06T21:59:16Z 置信度 0.70
• Mitigating best focus shift in high-NA EUV lithography via optical constant screening
  crossref Seungho Lee, Dongmin Jeong, Yunsoo Kim, Taeho Lee 等 2025-09-17T20:50:15Z 置信度 0.70
• Physical optics study of mask roughness in EUV interference lithography
  crossref Jerome Knappett, Cameron M. Kewish, Blair Haydon, Grant A. van Riessen 2025-07-31T22:32:39Z 置信度 0.70
• Thermal conductivity of underlayers for EUV lithography and its effect on sensitivity of metal oxide resist
  crossref Roberto Fallica, Danilo De Simone, Patrick Hopkins, Andrew Jones 等 2025-02-21T20:40:22Z 置信度 0.70
• Measurement and adjustment of resist SWA in EUV lithography
  crossref Jo Finders, Vidya Vaenkatesan, Lei Feng, Vishal Panchal 等 2025-04-22T18:31:23Z 置信度 0.70
• Analytical waveguide model for EUV masks: insights and comparison with RCWA
  crossref Varun Jadhav, Andreas Erdmann 2025-09-23T19:00:55Z 置信度 0.70
• Printability simulations of EUV photomask contamination clean and repair
  crossref Tod E. Robinson 2025-07-21T23:48:50Z 置信度 0.70
• Study on dose reductions of organometal chemically amplified resists for sustainability of EUV lithography
  crossref K. Machida, E. Satoshi, A. Konda, E. Nomura 等 2025-09-19T19:36:49Z 置信度 0.70
• Holistic statistical models for stochastic behaviors in lithography processes
  crossref Hiroshi Fukuda 2025-04-22T18:32:40Z 置信度 0.70
• Evaluation of thinner resist film in beyond EUV interference lithography tool at NewSUBARU
  crossref Ryuta Shiga, Shinji Yamakawa, Tetsuo Harada, Naoki Hayase 2025-09-30T16:58:49Z 置信度 0.70
• Investigation of stannane (SnH4) decomposition and sticking coefficient on varied metal surfaces in EUV lithography environments
  crossref Emily Greene, Nathan Bartlett, Dren Qerimi, David N. Ruzic 2025-02-19T20:38:23Z 置信度 0.70
• EUV mask requalification study of new EUV blanks for advanced logic high volume production application
  crossref Charlie Kuan, Selina Cheng, Pei-ying Lin, Dongsheng Fan 等 2025-07-21T23:48:50Z 置信度 0.70
• Actinic patterned mask inspection for high-NA EUV lithography
  crossref Ko Gondaira, Akira Ueda, Daichi Miura, Michiteru Mizoguchi 等 2025-07-21T23:48:50Z 置信度 0.70
• Exploring multilayer mirror designs for future EUV lithography
  crossref Jumpei Tsunoda, Takuma Kato, Taiga Fudetani, Hiroshi Hanekawa 等 2025-11-06T23:02:51Z 置信度 0.70
• EUV Lithography: Past, Present and Future
  crossref Jos Benschop 2025-07-26T22:07:57Z 置信度 0.70
• Development of mask absorbers for next generation EUV lithography
  crossref Hideaki Nakano, Daisuke Miyawaki, Yu Hasegawa, Itaru Yoshida 等 2025-02-19T20:38:23Z 置信度 0.70
• Improvement of non-PFAS biomass EUV resist for high-NA EUV lithography
  crossref Kazuyo Morita, Yuki Yoshikura, Harumi Sunaga, Yuki Yanagisawa 2025-04-22T19:12:12Z 置信度 0.70
• Optimization of EUV mask multilayers for high-NA and hyper-NA lithography
  crossref Bruce W. Smith 2025-11-06T23:02:41Z 置信度 0.70
• Detection sensitivity of actinic patterned mask inspection systems for high-NA EUV lithography
  crossref Michiteru Mizoguchi, Itaru Matsugu, Ko Gondaira, Toshiyuki Todoroki 等 2025-04-22T18:31:23Z 置信度 0.70
• Decision letter for "Advances in Metal-based Photoresist Materials for EUV Lithography and Lithographic Mechanisms"
  crossref 2025-08-04T21:01:26Z 置信度 0.70
• Decision letter for "Advances in Metal-based Photoresist Materials for EUV Lithography and Lithographic Mechanisms"
  crossref 2025-08-04T21:01:26Z 置信度 0.70
• Digital lithography
  crossref Chi-Ming Tsai, Thomas L. Laidig, Jang Fung Chen 2025-04-22T18:32:39Z 置信度 0.70
• Fast diffraction model of an EUV mask based on asymmetric patch data fitting.
  europepmc 2023 置信度 0.80
• High power fiber laser driver for efficient EUV lithography source with tin-doped water droplet targets.
  In this paper we report the development of nanosecond-pulsed fiber laser technology for the next generation EUV lithography sources. The demonstrated fiber laser system incorporates large core fibers and arbitrary optical waveform generation, which enables ach…
  pubmed Hou KC, George S, Mordovanakis AG, Takenoshita K 等 2008 置信度 0.82
• CMOS compatible 2T pixel for on-wafer in-situ EUV detection.
  europepmc 2023 置信度 0.80
• Enhanced Thermal Conductivity of Free-Standing Double-Walled Carbon Nanotube Networks.
  europepmc 2023 置信度 0.80