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• Korean Economic and Industrial Outlook for the Second Half of 2020
  preprints 2022 置信度 0.74
• FWave: a fast 3D resist model with dual-branch architecture for EUV lithography simulation.
  europepmc 2026 置信度 0.80
• A synchrotron-based kilowatt-level radiation source for EUV lithography
  europepmc 2021 置信度 0.80
• Evaluating an alternative Pt-W alloy as a low-n EUV mask absorber: Film properties and imaging performance.
  europepmc 2026 置信度 0.80
• Sub-Nanometer Lithography Alignment and Zero-Entropy Thermal Cancellation via 4D Spatiotemporal Phonon Phase Resonance
  europepmc 2026 置信度 0.80
• Top-profile-prior-constrained inversion for bottom-parameter reconstruction of extreme ultraviolet mask phase defects.
  europepmc 2026 置信度 0.80
• Competing Sn-O and Sn-C Bond Cleavage Pathways Control Cross-Linking in Tin-Oxo Clusters.
  europepmc 2026 置信度 0.80
• World-First Realization of Dynamical Quasi-Superconductivity in Phase-Engineered Active Conductors Bypassing Ambient Thermal Dissipation Limits
  europepmc 2026 置信度 0.80
• Fluorinated acid amplifiers for EUV lithography.
  Five new compounds were synthesized for use as acid amplifiers in EUV (13.5 nm) photoresists. Four compounds act as acid amplifiers and decompose by autocatalytic kinetics to generate fluorinated sulfonic acids, essential for the simultaneous improvement of re…
  pubmed Kruger S, Revuru S, Higgins C, Gibbons S 等 2009 置信度 0.82
• Comparison of acid generation in EUV lithography films of poly(4-hydroxystyrene) (PHS) and noria adamantyl ester (Noria-AD(50)).
  The mechanism for acid production in phenolic extreme ultraviolet (EUV) lithography films containing triphenylsulfonium triflate (Ph(3)S(+)TfO(-)) acid generator has been investigated by electron paramagnetic resonance (EPR) spectroscopy and by use of the acid…
  pubmed Wu W, Nuzhdin K, Vyushkova M, Janik I 等 2012 置信度 0.82
• Single Rare-Earth Ion Doped Tin-Oxo Nanocluster Photoresists for High-Resolution Extreme Ultraviolet Lithography.
  europepmc 2025 置信度 0.80
• Enhanced Damage Resistance of Mo/Si Multilayer Mirror with Carbon Barrier Layers under Intense Nanosecond EUV Irradiation.
  europepmc 2025 置信度 0.80
• Initial Stage of Nanoscale Imaging in Positive Tone Extreme UV Photoresists: The Influence of the Polymer Sequence.
  europepmc 2026 置信度 0.80
• Multi-Benzyl Chloride Based Molecular Resists Enabling 13 nm Half-Pitch Lithography via Self-Crosslinking
  europepmc 2025 置信度 0.80
• Atomistic insights into EUV photoresist photolysis via full temporal dynamics.
  europepmc 2026 置信度 0.80
• Single-Component High-Resolution Dual-Tone EUV Photoresists Based on Precision Self-Immolative Polymers.
  europepmc 2025 置信度 0.80
• Design of a grazing incidence illumination system for anamorphic extreme ultraviolet lithography.
  europepmc 2025 置信度 0.80
• Prior-primed deep neural network based EUV mask inspection.
  europepmc 2025 置信度 0.80
• Polymer Sequence Alters Sensitivity and Resolution in Chemically Amplified Polypeptoid Photoresists.
  europepmc 2025 置信度 0.80
• Selenite-Directed Organotin-Oxo Macrocycles for Nanolithography.
  europepmc 2025 置信度 0.80
• Extreme Ultraviolet Multilayer Defect Profile Parameters Reconstruction via Transfer Learning with Fine-Tuned VGG-16.
  europepmc 2025 置信度 0.80
• Ptychography at all wavelengths.
  europepmc 2025 置信度 0.80
• Computational Study of Organotin Oxide Systems for Extreme Ultraviolet Photoresist.
  europepmc 2025 置信度 0.80
• Stress-Induced Directed Self-Assembly of Perpendicularly Oriented Block Copolymer Lamellae for Lithographic Density Multiplication.
  europepmc 2025 置信度 0.80
• Etchant-Free Dry-Developable Extreme Ultraviolet Photoresist Materials Utilizing N-Heterocyclic Carbene-Metal Complexes.
  europepmc 2025 置信度 0.80
• AI-Assisted Composite Etch Model for MPT.
  europepmc 2025 置信度 0.80
• Cryo-electron tomography reconstructs polymer in liquid film for fab-compatible lithography.
  europepmc 2025 置信度 0.80
• One Method for Improving Overlay Accuracy Through Focus Control.
  europepmc 2026 置信度 0.80
• Special Issue "Properties and Applications of Nanoparticles and Nanomaterials: 2nd Edition".
  europepmc 2025 置信度 0.80
• Improving the Lithography Sensitivity of Atomically Precise Tin-Oxo Nanoclusters via Heterometal Strategy.
  europepmc 2025 置信度 0.80
• Analysis of Dynamic Stability Control of Light Source in Immersion DUV Lithography.
  europepmc 2025 置信度 0.80
• Phase-probability shaping for speckle-free holographic lithography.
  europepmc 2025 置信度 0.80
• Semiconductor manufacturing wastewater challenges and the potential solutions via printed electronics.
  europepmc 2025 置信度 0.80
• Wafer-scale fabrication of solid-state nanopore array with a novel SpacerX process.
  europepmc 2025 置信度 0.80
• Atomic Layer Etching of Nickel Using N<sub>2</sub>/H<sub>2</sub> Plasma Exposure and Hexafluoroacetylacetone.
  europepmc 2026 置信度 0.80
• Beyond binary patterning: polypropylene carbonate as a versatile thermal resist for high-fidelity grayscale Nanofabrication.
  europepmc 2026 置信度 0.80
• Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies.
  europepmc 2026 置信度 0.80
• Mie-enhanced microfocused Brillouin light scattering for full wave vector resolution of nanoscale spin waves.
  europepmc 2025 置信度 0.80
• Fabrication of molecular nanoscale junctions with a junction area of 7 × 7 nm<sup>2</sup> and their structural and electrical properties.
  europepmc 2025 置信度 0.80
• Modelling Key Performance Indicators (KPIs) in the Optimisation of Nanoimprint Lithography (NIL) Processes.
  europepmc 2026 置信度 0.80
• Parameter Calibration of Rotating Wave Plate Polarization Detection Device Using Dual Beams.
  europepmc 2025 置信度 0.80
• Bayesian Optimization for the Formation of Vertically Oriented Silicon Structures Using Langmuir-Blodgett Colloidal Lithography and Plasma Chemical Etching.
  europepmc 2026 置信度 0.80
• Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States.
  europepmc 2025 置信度 0.80
• High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET.
  europepmc 2025 置信度 0.80
• Design of isolated lithographic SERS structures with enhanced sensitivity.
  europepmc 2025 置信度 0.80
• Ordering Enhancement of Ion Bombardment-Induced Nanoripple Patterns: A Review.
  europepmc 2025 置信度 0.80
• An Acid-Cleavable Lamellar Block Copolymer for Sub-30-nm Line Spacing Patterning via Graphoepitaxial Directed Self-Assembly and Direct Wet Etching.
  europepmc 2025 置信度 0.80
• Directed Self-Assembly of an Acid-Responsive Block Copolymer for Hole-Shrink Process and Pattern Transfer.
  europepmc 2025 置信度 0.80
• Reference-Free Quantitative Mass Spectrometry Enables Sequencing of Resist Copolymers and Reveals Sequence-Dependent Deprotection Sensitivity.
  europepmc 2026 置信度 0.80
• High-Contrast and High-Speed Optical Logic Operations Using Silicon Microring Resonators.
  europepmc 2025 置信度 0.80
• From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications.
  europepmc 2025 置信度 0.80
• Evolution in Lithography Techniques: Microlithography to Nanolithography.
  europepmc 2022 置信度 0.80
• Optimization of diffractive optical elements for automotive adaptive front-lighting systems: compliance with ECE-R123.
  europepmc 2026 置信度 0.80
• Nano- and Microscale Chemical and Topographical Patterning of Synthetic Cell Scaffolds: from Hard to Soft Materials.
  europepmc 2025 置信度 0.80
• Investigation of Biosubjects with Diffuse Reflectance Spectroscopy.
  europepmc 2026 置信度 0.80
• High-efficiency multilayer grating for enhanced tender x-ray photoelectron spectroscopy.
  europepmc 2025 置信度 0.80
• Trends and Advances in Wearable Plasmonic Sensors Utilizing Surface-Enhanced Raman Spectroscopy (SERS): A Comprehensive Review.
  europepmc 2025 置信度 0.80
• Machine Learning-Driven Cooling Window Design Beyond Hyperbolic Metamaterials.
  europepmc 2026 置信度 0.80
• Polymerization of 1,3-butadiene catalyzed by Co(ii) and Ni(ii) complexes of 6,6'-dihydroxy-2,2'-bipyridine ligands: 1,4-<i>cis</i>-polymerization <i>versus</i> isospecific 1,2-polymerization.
  europepmc 2025 置信度 0.80
• Industry Updates.
  europepmc 2021 置信度 0.80
• Wide Neutrality Window for Block Copolymer Vertical Orientation Using Incongruent Homopolymer Blended Brushes.
  europepmc 2025 置信度 0.80
• Biomimetic Superhydrophobic Surfaces: From Nature to Application.
  europepmc 2025 置信度 0.80
• Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices.
  europepmc 2026 置信度 0.80
• A Comprehensive Review of Optical Metrology and Perception Technologies.
  europepmc 2025 置信度 0.80
• Large-scale molecular dynamics simulations of negative thermal expansion in Bi<sub>1-x</sub>La<sub>x</sub>CoO<sub>3</sub> using a pretrained machine learning force field.
  europepmc 2026 置信度 0.80
• All-Optical Nonlinear Real and Fourier-Space Shaping with All-Dielectric Fano Resonant Metasurfaces.
  europepmc 2026 置信度 0.80
• Alumina Priming-Mediated Enhanced Binding of Diethylzinc with Carbonyl Groups in Poly(Methyl Methacrylate) during Vapor-Phase Infiltration.
  europepmc 2026 置信度 0.80
• Development of novel lubricant formulation for cleanroom and vacuum application.
  europepmc 2025 置信度 0.80
• Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning.
  europepmc 2022 置信度 0.80
• Near-field sub-diffraction photolithography with an elastomeric photomask.
  europepmc 2020 置信度 0.80
• Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids.
  europepmc 2023 置信度 0.80
• Independent control over cell patterning and adhesion on hydrogel substrates for tissue interface mechanobiology.
  europepmc 2023 置信度 0.80
• ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors.
  europepmc 2019 置信度 0.80
• Tensorial Rendering Engineering
  Clock Pulse Tensor, Temporal Signature of Clock-Bit Entanglement, and the Metric Observer Effect in the 165 D Tensor Civilization در تراز ۱۶۵، «ابر-لاگرانژی حمزه» (Hamzah Super-Lagrangian - $\mathcal{L}_{H}^{Super}$) به عنوان قلب تپنده و موتور محرکه‌یِ نظریه‌ی…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Tensorial Rendering Engineering
  Clock Pulse Tensor, Temporal Signature of Clock-Bit Entanglement, and the Metric Observer Effect in the 165 D Tensor Civilization در تراز ۱۶۵، «ابر-لاگرانژی حمزه» (Hamzah Super-Lagrangian - $\mathcal{L}_{H}^{Super}$) به عنوان قلب تپنده و موتور محرکه‌یِ نظریه‌ی…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• Light Sources and Materials for EUV Lithography
  The field of semiconductor manufacturing is heavily dependent on the process of photolithography. Photoresists undergo chemical changes when exposed to light, allowing for patterning of the silicon before other processing steps such as etching and ion implanta…
  datacite Durkan, Stephen 2025 置信度 0.66
• Invited Article: High-quality blazed gratings through synergy between e-beam lithography and robust characterization techniques
  Maintaining the highest quality and output of photon science in the VUV-, EUV-, soft-, and tender-x-ray energy ranges requires high-quality blazed profile gratings. Currently, their availability is critical due to technological challenges and limited manufactu…
  datacite Herrero, Analía F., Samadi, Nazanin, Sokolov, Andrey, Gwalt, Grzegorz 等 2025 置信度 0.66 620
• Research on Core Technology Breakthroughs of EUV Lithography Machines Based on the Cross-Scale Force Unification Theory
  Aiming at the three core bottleneck problems restricting domestic EUV lithography machines—EUV photoresist performance imbalance, insufficient light source conversion efficiency, and poor film formation uniformity—combined with the industrial background of Jap…
  datacite Bian, Zhenfeng 2025 置信度 0.66 Cross-Scale Force Unification;EUV Lithography;Photoresist Performance;Light Source Conversion Efficiency;Film Formation Uniformity;Bian's Unified Field Frequency Formula (F_q);Particle Deterministic State;Semiconductor Manufacturing;Applied Physics;Theoretical Physics;Condensed Matter Physics;Industrial Chain Security
• Research on Core Technology Breakthroughs of EUV Lithography Machines Based on the Cross-Scale Force Unification Theory
  Aiming at the three core bottleneck problems restricting domestic EUV lithography machines—EUV photoresist performance imbalance, insufficient light source conversion efficiency, and poor film formation uniformity—combined with the industrial background of Jap…
  datacite Bian, Zhenfeng 2025 置信度 0.66 Cross-Scale Force Unification;EUV Lithography;Photoresist Performance;Light Source Conversion Efficiency;Film Formation Uniformity;Bian's Unified Field Frequency Formula (F_q);Particle Deterministic State;Semiconductor Manufacturing;Applied Physics;Theoretical Physics;Condensed Matter Physics;Industrial Chain Security
• نظریه کلاک پالس تانسور امضای زمانی درهم‌تنیدگی کلاک-بیت و اثرِ ناظرِ مترییک در تراز ۱۶۵ تمدن تانسوری با مکانیکِ تانسورِ پویایِ ابعادی معادله حمزه.Theory of the Clock-Pulse Tensor Temporal Signature of Clock-Bit Entanglement and the Metric Observer Effect at Level 165 of Tensorial Civilization with the Dynamic Dimensional Tensor Mechanics of the Hamzah Equation.
  Theory of the Clock-Pulse Tensor Temporal Signature of Clock-Bit Entanglement and the Metric Observer Effect at Level 165 of Tensorial Civilization with the Dynamic Dimensional Tensor Mechanics of the Hamzah Equation. در تراز ۱۶۵، «ابر-لاگرانژی حمزه» (Hamzah S…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.66
• پرزیدنت ولادمیر پوتین و پیام خالق معادله حمزه
  ابلاغیه استراتژیک ۱۶۵D: از «تصلبِ امپراتوری» به «سیادتِ کوانتومی» خطاب به: دفتر ریاست‌جمهوری روسیه (کرملین) – ولادیمیر پوتین موضوع: گزارشِ آنتروپیِ ملی و دکترینِ نوزاییِ حمزه (H-Doctrine) ۱. کالبدشکافیِ بحران: تکینگیِ فرسایش روسیه در دسامبر ۲۰۲۵ نه درگیر یک جن…
  datacite JALALI, SEYED 2025 置信度 0.66
• پرزیدنت ولادمیر پوتین و پیام خالق معادله حمزه
  ابلاغیه استراتژیک ۱۶۵D: از «تصلبِ امپراتوری» به «سیادتِ کوانتومی» خطاب به: دفتر ریاست‌جمهوری روسیه (کرملین) – ولادیمیر پوتین موضوع: گزارشِ آنتروپیِ ملی و دکترینِ نوزاییِ حمزه (H-Doctrine) ۱. کالبدشکافیِ بحران: تکینگیِ فرسایش روسیه در دسامبر ۲۰۲۵ نه درگیر یک جن…
  datacite JALALI, SEYED 2025 置信度 0.66
• جهش کوانتومی لیتوگرافی فرا-پلانک ، تسلط محاسباتی فرا-نوری و یادگیری عمیق با فرا-تانسور ۱۶۵ بُعدی معادله حمزه
  جهش کوانتومی لیتوگرافی فرا-پلانک ، تسلط محاسباتی فرا-نوری و یادگیری عمیق با فرا-تانسور ۱۶۵ بُعدی معادله حمزه رمزگذاری تانسور ۱۶۵ بُعدی: $H_{\text{ENCODED}} = \prod_{\tau=1}^{150} \left[ \frac{\partial H_{165}(\tau)}{\partial \tau} \cdot \exp\left(i \int L_{\te…
  datacite JALALI, SEYED RASOUL 2025 置信度 0.66
• جهش کوانتومی لیتوگرافی فرا-پلانک ، تسلط محاسباتی فرا-نوری و یادگیری عمیق با فرا-تانسور ۱۶۵ بُعدی معادله حمزه
  جهش کوانتومی لیتوگرافی فرا-پلانک ، تسلط محاسباتی فرا-نوری و یادگیری عمیق با فرا-تانسور ۱۶۵ بُعدی معادله حمزه رمزگذاری تانسور ۱۶۵ بُعدی: $H_{\text{ENCODED}} = \prod_{\tau=1}^{150} \left[ \frac{\partial H_{165}(\tau)}{\partial \tau} \cdot \exp\left(i \int L_{\te…
  datacite JALALI, SEYED RASOUL 2025 置信度 0.66
• پایان عصر سخت افزارها و ترانزیستورها وآغازانتقال به عصر هولوگرافیک کوانتومی ۴۵ بعدی با معادله حمزه
  چکیده با رسیدن فناوری سیلیکونی به محدودیت‌های فیزیکی "حد تونل‌زنی کوانتومی" و ناکارآمدی قانون مور در مقیاس‌های زیر ۱ نانومتر، جهان نیازمند یک تغییر پارادایم بنیادی است. این مقاله با معرفی "معادله میدان واحد حمزه" و سیستم "تانسور ۴۵ بعدی"، پایان رسمی عصر ترانزی…
  datacite JALALI, SEYED RASOUL 2025 置信度 0.66
• پایان عصر سخت افزارها و ترانزیستورها وآغازانتقال به عصر هولوگرافیک کوانتومی ۴۵ بعدی با معادله حمزه
  چکیده با رسیدن فناوری سیلیکونی به محدودیت‌های فیزیکی "حد تونل‌زنی کوانتومی" و ناکارآمدی قانون مور در مقیاس‌های زیر ۱ نانومتر، جهان نیازمند یک تغییر پارادایم بنیادی است. این مقاله با معرفی "معادله میدان واحد حمزه" و سیستم "تانسور ۴۵ بعدی"، پایان رسمی عصر ترانزی…
  datacite JALALI, SEYED RASOUL 2025 置信度 0.66
• Silicon Autocracy : The power of the monocle of Light
  Silicon Autocracy: The Power of the Monocle of Light explores the unprecedented concentration of technological power in the hands of a single industrial actor: ASML, the Dutch company holding a global monopoly over EUV (Extreme Ultraviolet) lithography. Throug…
  datacite Spinal Technology Co., Ltd. 2025 置信度 0.66 Silicon AutocracyEUVLithographyASMLTechnological Sovereignty
• Silicon Autocracy : The power of the monocle of Light
  Silicon Autocracy: The Power of the Monocle of Light explores the unprecedented concentration of technological power in the hands of a single industrial actor: ASML, the Dutch company holding a global monopoly over EUV (Extreme Ultraviolet) lithography. Throug…
  datacite Spinal Technology Co., Ltd. 2025 置信度 0.66 Silicon AutocracyEUVLithographyASMLTechnological Sovereignty
• Pathfinding the perfect EUV mask
  In the pursuit of more power-efficient electronics, the necessity for smaller gate sizes on Integrated Circuits (ICs) has become imperative. High-NA EUVL technology holds the promise of achieving an unprecedented 8 nm gate size. In high-NA EUVL operating at 13…
  datacite Mesilhy, Hazem Mohamed Safwat 2024 置信度 0.66 EUV, Lithography, Optical mask, optical lithography, EUVL
• Realizing Steady-State Microbunching with Optical Stochastic Crystallization
  Optical Stochastic Cooling (OSC) is a state-of-the-art beam cooling technology first demonstrated in 2021 at the IOTA storage ring at Fermilab's FAST facility. A second phase of the research program is planned to run in early 2025 and will incorporate an optic…
  datacite Wallbank, M., Jarvis, J. 2024 置信度 0.66 Accelerator Physics (physics.acc-ph)FOS: Physical sciencesFOS: Physical sciences
• Imec achieves milestones in single patterning High NA EUV lithography
  crossref 2025-12-10T07:17:16Z 置信度 0.70
• Absorber dependence of M3D overlay errors in high-NA and hyper-NA EUV lithography
  crossref Hiroyoshi Tanabe, Atsushi Takahashi 2025-04-22T18:32:40Z 置信度 0.70
• Tabletop EUV lithography system for resist characterization
  crossref Ethan Flores, Saurav Mohanty, Richard Mitchell, Chih-Hao Chang 2025-09-19T22:53:41Z 置信度 0.70
• Patterning Fidelity Enhancement and Aberration Mitigation in EUV Lithography Through Source-Mask Optimization
  Extreme ultraviolet (EUV) lithography faces critical challenges in aberration control and patterning fidelity as technology nodes shrink below 3 nm. This work demonstrates how Source-Mask Optimization (SMO) simultaneously addresses both illumination and mask d…
  europepmc Qi Wang, Qiang Wu, Ying Li, Xianhe Liu 等 2025 置信度 0.80
• Introduction of fully automated EUV pellicle mounter and demounter (EPMD)
  crossref Dongyoung Shin, Seongyong Moon, Sungchul Jeon, Sunwoo Lee 2021-02-19T17:00:38Z 置信度 0.70
• High-NA EUV Lithography
  This monograph provides a rigorous, engineering-focused architectural analysis of the ASML TwinScan EXE:5000 High-NA (0.55) Extreme Ultraviolet (EUV) lithography system, mapping the complex technological, optical, and computational frameworks required for sub-…
  crossref Attilio Lo Magro 2026-06-17T21:25:01Z 置信度 0.70
• Cobalt-containing polymers as patterning assist layers in extreme ultraviolet lithography
  crossref Georgeta Masson 2010-03-17T22:05:47Z 置信度 0.70
• Actinic patterned mask inspection for EUV lithography
  crossref Toshiyuki Todoroki, Hiroki Miyai 2023-09-29T22:45:32Z 置信度 0.70
• Optical investigation of stacked absorber type black border on EUV mask
  crossref Daimu Ikeya, Yohei Ikebe, Tsutomu Shoki 2024-09-18T18:55:06Z 置信度 0.70
• Imaging performance of EUV lithography optics configuration for sub-9nm resolution
  crossref Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura 等 2015-03-16T22:41:34Z 置信度 0.70