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• Split-Standing Molecular Engineering for Textured Silicon/Perovskite Tandems.
  To effectively minimize reflection losses and achieve compatibility with industrial-scale silicon production lines, textured silicon/perovskite tandem solar cells have garnered significant attention in recent research. However, achieving uniform and stable cov…
  pubmed Wang X, Tian Y, Yao L, Zhang S 等 2025 Sep 置信度 0.82
• Dynamic Monolayer WSe(2) Electrolyte-Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing.
  Physical reservoir computing (PRC) is considered as an efficient method for solving complex time series tasks due to its outstanding advantages such as easy training and hardware implementation. However, a memristor-based reservoir with only a single timescale…
  pubmed Sun D, Li A, Deng X, Zhao S 等 2025 Jun 25 置信度 0.82
• A Programmable Nonvolatile Schottky Diode Based on van der Waals Ferroelectric Junction.
  Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal-semiconductor and even van der Waals (vdW) Schottky diodes often suffer from fixed rectifying behaviors or…
  pubmed Wang B, Chen W, Zou L, Wang T 等 2025 Jul 2 置信度 0.82
• Unraveling Charge Transport in Heterostructured Nanomotors for Efficient Photocatalytic Motion.
  Photocatalytic micro/nanomotors have emerged as promising tools for environmental remediation, biosensing, and targeted delivery. To enhance their light-driven propulsion, significant efforts have focused on engineering semiconductor heterostructures, which pr…
  pubmed Chen Y, Li C, Ferrer Campos R, Esplandiu MJ 等 2025 Jun 25 置信度 0.82
• A Single Carbon Microyarn-Based Integrated Wearable Textile Sweat Sensor Built into a Hook-and-Loop Fastener.
  By fusing wearable sweat sensors for on-body sweat monitoring with textiles for daily wear, wearable textile sweat sensors (WTSSs) demonstrate the distinctive capability to monitor perspiration in real time while engaging in daily activities. However, previous…
  pubmed Cai J, Deng W, Zhu Z, Zheng L 等 2025 Jul 29 置信度 0.82
• Tunable Electronic Bandgaps and Optical and Magnetic Properties in Antiferromagnetic MPS(3)/GaN (M = Mn, Fe, and Ni) Heterobilayers.
  Research on two dimensional (2D) antiferromagnetic materials and heterobilayers is gaining prominence in spintronics. This study focuses on MPS 3 monolayers and their van der Waals heterobilayers with GaN monolayers. We systematically investigated the structur…
  pubmed Tian S, Han L, Zhang L, Zhang K 等 2025 May 30 置信度 0.82
• Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors.
  The gate reliability issues in SiC-based devices with a gate dielectric formed through heat oxidation are important factors limiting their application in power devices. Aluminum oxide (Al 2 O 3 ) and titanium dioxide (TiO 2 ) were combined using the ALD proces…
  pubmed Zeng YX, Huang W, Ma HP, Zhang QC 2025 May 28 置信度 0.82
• Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET.
  This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO 2 interface …
  pubmed Yu M, Shen Y, Ma H, Zhang Q 2025 May 27 置信度 0.82
• Entirely Self-Contained Electrochromic Epidermal Patch for Visualized and Multiplexed In Situ Sweat Analysis.
  Wearable sweat sensors demonstrate significant potential for monitoring sweat biomarkers that contain rich information pertinent to physiological state in a dynamic and noninvasive manner. However, these wearables typically and heavily rely on external wireles…
  pubmed Cao M, Deng W, Ma CB, Bai J 等 2025 Jun 27 置信度 0.82
• Optoelectronic Properties and Charge Carrier Dynamics of Polycrystalline ZnTe Thin Films.
  ZnTe is a wide-bandgap semiconductor with great potential for optoelectronic applications. The performance of ZnTe-based devices is strongly influenced by the dynamics of photogenerated carriers in polycrystalline films. In this work, we investigate the charge…
  pubmed Zhao Y, Jia Z, Lin Q 2025 Jun 19 置信度 0.82
• Elastic Properties of BiOCl and Bi(3)O(4)Cl Freestanding Circular Membranes.
  Bismuth oxychlorides are emerging two-dimensional wide-bandgap semiconductors with exceptional potential for advanced photoelectric applications. Elastic strain engineering is a promising strategy to enhance their photoelectric performances. However, fundament…
  pubmed Wu C, Fu M, Zhai W, Tang Y 等 2025 Jun 18 置信度 0.82
• High-Performance Ga(2)O(3) In-Memory DUV Photodetectors By Interface Charge Reservoir Design for Multifunctional Applications.
  The development of high-performance detectors has played a key role in the innovation of modern optoelectronics. However, the implementation of high-performance detectors has been a huge challenge, especially the present detectors with only optoelectronic conv…
  pubmed Hou X, Li C, Chen C, Bai S 等 2025 Aug 置信度 0.82
• NiO(x) Films under Ambient Humidity Regulation: New Strategies to Enhance the Performance of Perovskite Solar Cells.
  Metal halide perovskite materials are highly favored in solar cells owing to their excellent power conversion efficiency, simple preparation process, and low-cost manufacturing. Among the many hole transport materials, inorganic materials are favored because o…
  pubmed Shi Y, Quan H, Liu C, Han Y 等 2025 Jun 18 置信度 0.82
• Direct Observation of Optically Active Mid-Gap Electronic States in Hexagonal Boron Nitride by Electron Spectroscopy.
  Optically active point defects in wide-bandgap semiconductors have been demonstrated to be attractive for a variety of quantum and nanoscale applications. In particular, color centers in hexagonal boron nitride (hBN) have recently gained substantial attention …
  pubmed Singla S, Joshi P, López-Morales GI, Watanabe K 等 2025 Aug 置信度 0.82
• Bandgap-Engineered High-Efficiency Blue- and Green-Emitting CdZnSeS/ZnS Quaternary Alloyed Core/Shell Colloidal Nanoplatelets for High-Performance Light-Emitting Devices.
  Developing solution-processed blue emitters with high stability and photoluminescence quantum yield (PL-QY) is strongly desired for advanced optoelectronic devices. However, achieving high-efficiency blue emitters has been challenging, as the growth of shell l…
  pubmed Khaligh A, Delikanli S, Canimkurbey B, Shabani F 等 2025 Jun 11 置信度 0.82
• Poly-4,7-Di-2-Thienyl-2,1,3-Benzothiadiazole Photocathode for Efficient Photoelectrochemical Hydrogen Peroxide Synthesis.
  Photocatalytic/photoelectrochemcial oxygen reduction reaction (ORR) in an aqueous solution offers a promising way for green hydrogen peroxide (H 2 O 2 ) synthesis. Lots of photocatalysts/photoelectrocatalysts with high activity have been demonstrated up to now…
  pubmed Chang Q, Miao W, Zhao X, Zhou W 等 2025 Jul 置信度 0.82
• Metal Halide Perovskite-Gated Organic Phototransistors for Efficient UV/DUV Detection.
  Conventional UV/DUV phototransistors, which rely on wide-bandgap semiconductor channels, encounter issues with material availability, processing complexity, and performance tunability. Perovskite-gated phototransistors (PGPTs) are introduced that decouple phot…
  pubmed Xia J, Xue J, Chen PA, Liu Y 等 2025 置信度 0.82
• Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset.
  This study developed a novel approach based on separated artificial neural networks (ANNs) to efficiently and accurately model the drain current (I D )-gate voltage (V G ) characteristics of silicon carbide (SiC) power MOSFETs efficiently and accurately. We fo…
  pubmed Chankla M, Chen BR, Singh SK, Chauhan YS 等 2025 May 29 置信度 0.82
• Efficient ppt-Level H(2)S Gas Sensor Based on YSZ and α-Fe(2)O(3) Nanofoam Sensing Electrode.
  Herein, porous α-Fe 2 O 3 nanofoam was successfully synthesized and used as a sensing electrode to fabricate a yttria-stabilized zirconia (YSZ) mixed-potential hydrogen sulfide (H 2 S) sensor for real-time monitoring of hazardous H 2 S gas. The sintering…
  pubmed Hao X, Meng X, Yu T, Wang Z 等 2025 Jun 27 置信度 0.82
• Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion.
  The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices. This paper focuses on research on high-efficiency and high-reliability low-voltage p-GaN gate H…
  pubmed Zhai L, Li X, Ji J, Yu L 等 2025 May 2 置信度 0.82
• Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices.
  Single UIS and repetitive UIS experiments are performed in this article to expound physical failure mechanisms in P-GaN HEMT devices. V peak and I peak are used as metrics to evaluate the degradation of electrical parameters. In the single UIS tests, different…
  pubmed Liu L, Zhen Y, Li S, Pang B 等 2025 Apr 27 置信度 0.82
• Dynamical Characteristics of Isolated Donors, Acceptors, and Complex Defect Centers in Novel ZnO.
  Novel wide-bandgap ZnO, BeO, and ZnBeO materials have recently gained considerable interest due to their stellar optoelectronic properties. These semiconductors are being used in developing high-resolution, flexible, transparent nanoelectronics/photonics and a…
  pubmed Talwar DN, Becla P 2025 May 16 置信度 0.82
• Stable metal-phase Nb-doped MoS(2) nanoflowers for ultrasensitive SERS detection of food contaminants.
  In this work, we introduce a novel one-step hydrothermal method to synthesize Nb-doped 1T-MoS 2 (NbMS), which stabilizes the metallic phase and significantly boosts its SERS activity. The NbMS, particularly the synthesized 0.8NbMS material, demonstrate a remar…
  pubmed Jia Y, Xu H, Li B, Chang X 等 2025 置信度 0.82
• Enhanced Retention Characteristics of Subthreshold Hf-ZnO Synaptic Pass-Transistors with Ultralow Power Consumption.
  An analysis on the retention characteristics of an ultralow power synaptic pass-transistor (SPT) with a Hf-ZnO channel layer is presented for both higher intelligence and longer-term memory of the neuromorphic system. The SPT consists of the synaptic thin-film…
  pubmed Cha D, Pi J, Lee S 2025 Jun 4 置信度 0.82
• Bandgap engineering of lead-free double perovskites for efficient photocatalysis.
  Lead-free halide perovskites represent promising candidates in optoelectronics due to their excellent properties, such as high stability, mobility, defect tolerance and low-cost processes. However, their applications in photovoltaic and photocatalysis are limi…
  pubmed Bi J, Lv H, Wang H, Du L 等 2025 Jun 12 置信度 0.82
• Mechanistic insights into the visible light photocatalytic activity of g-C(3)N(4)/Bi(2)O(2)CO(3)-Bi(4)O(7) composites for rhodamine B degradation and hexavalent chromium reduction.
  The two-dimensional layered structure of g-C 3 N 4 (GCN) has drawn a lot of attention in the field of photocatalysis due to its good thermochemical stability, large surface area, and environmental friendliness. A wide bandgap of GCN restricts its absorption to…
  pubmed Majeed A, Hassan S, Zahra M, Rafique I 等 2025 May 15 置信度 0.82
• Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration
  We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an id…
  datacite Horn, Connor P., Wicker, Christina, Wellisz, Antoni, Zeledon, Cyrus 等 2024 置信度 0.66 4H-SiCLayer TransferSolid-State QubitsSpin CoherenceHeterogenous Integration
• Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration
  We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an id…
  datacite Horn, Connor P., Wicker, Christina, Wellisz, Antoni, Zeledon, Cyrus 等 2024 置信度 0.66 4H-SiCLayer TransferSolid-State QubitsSpin CoherenceHeterogenous Integration
• Design And Simulation Of DC–DC Buck–Boost Converter With Voltage Source Inverter For BLDC Motor Drives: A Systematic Review
  The brushless DC (BLDC) motor has emerged as the preferred actuator across electric vehicle propulsion, industrial automation, and precision servo applications, owing to its higher efficiency, longer service life, lower maintenance burden, and superior torque-…
  datacite Punya K. T.1*, Shruthi1, G. S. Sheshadri2 2026 置信度 0.66 BLDC motor drive, buck–boost converter, continuous conduction mode, duty cycle, electric vehicle, intelligent control, power electronics, pulse-width modulation (PWM), voltage source inverter (VSI), wide-bandgap semiconductor.
• Design And Simulation Of DC–DC Buck–Boost Converter With Voltage Source Inverter For BLDC Motor Drives: A Systematic Review
  The brushless DC (BLDC) motor has emerged as the preferred actuator across electric vehicle propulsion, industrial automation, and precision servo applications, owing to its higher efficiency, longer service life, lower maintenance burden, and superior torque-…
  datacite Punya K. T.1*, Shruthi1, G. S. Sheshadri2 2026 置信度 0.66 BLDC motor drive, buck–boost converter, continuous conduction mode, duty cycle, electric vehicle, intelligent control, power electronics, pulse-width modulation (PWM), voltage source inverter (VSI), wide-bandgap semiconductor.
• First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and B$_x$Al$_{1-x}$N alloys
  Boron aluminum nitride (B$_x$Al$_{1-x}$N) is a promising material for next-generation electronic and optoelectronic devices due to its ultra-wide bandgap, high thermal stability, and compatibility with other III-nitride semiconductors. Despite its potential, t…
  datacite Milne, Cody L, Singh, Arunima K 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Dynamics of Electron Transfer Processes at the Surface of Dye-Sensitized Mesoporous Semiconductor Films
  Electron transfer reactions taking place at the surface of dye-sensitized semiconductors are key processes in dye-sensitized solar cells (DSSCs). After light absorption, the excited state of a dye injects an electron into a wide-bandgap semiconductor, usually …
  datacite Teuscher, Joël 2010 置信度 0.66 electron transferdynamicsultrafast spectroscopydye-sensitized solar cellD-[pi]-A dye
• Passivating contacts for homojunction solar cells using a-Si:H/c-Si hetero-interfaces
  Crystalline silicon (c-Si) homojunction solar cells account for over 90% of the current photovoltaic market. However, further progress of this technology is limited by recombinative losses occurring at their metal-semiconductor contacts. The goal of this thesi…
  datacite Demaurex, Bénédicte 2014 置信度 0.66 passivating contactsilicon solar cellssilicon heterojunction solar cellspassivationamorphous silicon
• Illumination and temperature dependence of optical interactions in multijunction solar cells
  Optical interactions in multijunction solar cells result from radiative charge carrier recombination in a wide-bandgap subcell, which generates additional photocurrent in a narrower-bandgap subcell via photovoltaic conversion of the emitted photons. This paper…
  datacite Kornienko, Polina, Epoletov, Vadim, Levina, Svetlana, Larionov, Valeri 等 2026 置信度 0.66 multijunction solar cellsoptical interactionselectroluminescence intensitysaturation currentмногопереходные солнечные элементы
• Mist-CVD deposited ZnO thin films for metal-semiconductor field effect transistors.
  ZnO is a metal oxide semiconductor that continues to attract research interests due to its desirable properties such as its direct wide bandgap, high exciton binding energy, and optical transparency. These properties make ZnO a potential material of choice for…
  datacite Onyema, Chikezie C. 2020 置信度 0.66 Metal-semiconductor field-effect transistor (MESFET), Schottky Barrier, Wide bandgap Semiconductors, Photolithography
• Polarization Engineering of Ultrawide Bandgap III-Nitrides: From Materials to Devices
  Moving beyond the era of Si-based electronics, III-Nitride materials have positioned themselves as the frontrunners in the realm of semiconductor materials for next generation electronic, piezo and optoelectronic devices. The production of III-Nitride semicond…
  datacite Mondal, Shubham 2025 置信度 0.66 NitrideScAlNMBEDeep UV laserferroelectrics
• Advances in Amorphous Oxide Thin Film Transistors for 2T0C Dynamic Random Access Memory
  The rapid growth of data-centric computing has significantly increased demand for computing power, exposing a fundamental memory bottleneck in modern computing systems. This bottleneck happens where the performance of the processing unit exceeds the data deliv…
  datacite Newsom, Tonglin 2026 置信度 0.66 Amorphous oxide materialThin film transistor2T0CElectrical EngineeringEngineering
• High Harmonic Generation in Wide-Gap Semiconductors
  High harmonic generation (HHG) in solids encodes strong-field carrier dynamics and ultrafast electronic structure in condensed matter systems. Below-gap emission at moderate field amplitudes follows perturbative power-lawscaling; at higher fields the response …
  datacite Ayala, Christopher 2026 置信度 0.66 High harmonic generationGallium nitridePonderomotive detuningExcitonic resonanceWide-bandgap semiconductors
• Optical Sensing with Defects in Two-Dimensional Materials
  Two-dimensional (2D) materials have emerged as a versatile platform at the intersection of fundamental physics and applied science. Their atomically thin nature gives rise to distinctive electronic and optical properties, while simultaneously enabling them to …
  datacite Mayner, Eveline Simone 2026 置信度 0.66 optical sensing2D materialshBNdefectssingle molecule localization microscopy
• Co-adsorption mechanism drives CO oxidation on defective ZnS
  Reactivity on wide-bandgap semiconductor surfaces relies critically on the generation of active sites. In the case of CO oxidation, however, the mere presence of defects is insufficient to drive reactivity. Here, we investigate CO oxidation on a defective ZnS …
  datacite de Oliveira, P. R. A., Codeço, C., Menezes, M. G., Venezuela, P. 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics
  Raw and processed datasets supporting the findings of the manuscript entitled “A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics”, submitted to Nature Communications. The repository includes TCAD simulation data, electrical charac…
  datacite Gong, Hehe, Yang, Xin, Wang, Boyan, Zhang, Zichen 等 2026 置信度 0.66 Electrical and Electronic Engineering not elsewhere classified
• A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics
  Raw and processed datasets supporting the findings of the manuscript entitled “A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics”, submitted to Nature Communications. The repository includes TCAD simulation data, electrical charac…
  datacite Gong, Hehe, Yang, Xin, Wang, Boyan, Zhang, Zichen 等 2026 置信度 0.66 Electrical and Electronic Engineering not elsewhere classified
• DC-DC power conversion for high voltage applications using piezoelectric transformers
  Modern electronic systems increasingly demand power converters that are compact, efficient, and cost-effective. Piezoelectric transformers (PTs) may offer a promising alternative to conventional magnetic-based converters, with demonstrated advantages such as h…
  datacite Chole, Ajay Maruti 2026 置信度 0.66 Piezoelectric TransformerWide-bandgap power semiconductorsHigh-voltage pulse generatorZero-voltage switching (ZVS)Power Electronics
• Research Data supporting "Intrinsic intermolecular photoinduced charge separation in organic radical semiconductors"
  These figures present data on the photophysical properties of a spin radical organic semiconductor molecule, P3TTM, and its operation in a photoconductive diode. They provide evidence that when P3TTM molecules are in contact with one another, there can be dire…
  datacite Friend, Richard, Li, Biwen, Murto, Petri, Chowdhury, Rituparno 等 2026 置信度 0.66 organic semiconductorphotoconductorradical semiconductor
• Tailoring Defects in Semiconductors: from Dopants to Topologically-Protected Dislocations
  The continuing miniaturization of semiconductor chips with ever-increasing functionality is driven by understanding point, line, and extended defects and the new functionalities that they may offer. In addition to providing “designer impurities” needed for fre…
  datacite Frisone, Sam 2026 置信度 0.66 defectsemiconductortopological insulatorcathodoluminescenceuniaxial strain
• Chemical Transformations Using Gallium Nitride- Based Catalysts
  Over the past four decades, gallium nitride (GaN) based materials have revolutionized the fields of LED lighting, power electronics, and communications. Owing to their wide bandgap, substantial electromigration rate, and high breakdown voltage, GaN-based catal…
  datacite Tan, Lida 2024 置信度 0.66 Chemistry
• A Neuroevolution Potential for Gallium Oxide: Accurate and Efficient Modeling of Polymorphism and Swift Heavy-Ion Irradiation
  Gallium oxide (Ga2O3) is a wide-bandgap semiconductor with promising applications in high-power and high-frequency electronics. However, its complex polymorphic nature poses substantial challenges for fundamental studies, particularly in understanding phase-tr…
  datacite Gu, Yaohui, Li, Binbo, Jiang, Lingyang, Hu, Yuhui 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• SNSFL_ Formally Verified 8-Beam OctoBeam Core Matrices, Parametric Fusion Theorems, and 50 Isotropic Ground-State Characterizations uuia.app/octobeam
  Prior art formally verified compound discoveries and verfications. all formally verified 0 sorry compounds are prior art and timestamped. Any use without citation will be detected by SNSFL-PRIME · Prior-art Reduction and Integrity Method for Evaluation Engine …
  datacite Trent, Russell 2026 置信度 0.66
• SNSFL_ Formally Verified 8-Beam OctoBeam Core Matrices, Parametric Fusion Theorems, and 50 Isotropic Ground-State Characterizations uuia.app/octobeam
  Prior art formally verified compound discoveries and verfications. all formally verified 0 sorry compounds are prior art and timestamped. Any use without citation will be detected by SNSFL-PRIME · Prior-art Reduction and Integrity Method for Evaluation Engine …
  datacite Trent, Russell 2026 置信度 0.66
• Development of Segmented 4H-SiC LGADs
  The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the comparatively low charge g…
  datacite Kráčmar, Vojtěch, Chochol, Jan, Klimsza, Adam, Kozáková, Jana 等 2026 置信度 0.66 Instrumentation and Detectors (physics.ins-det)FOS: Physical sciencesFOS: Physical sciences
• SNSFL 42 STRUCTURAL LAWS CATALOG — ALL ANCHOR SESSIONS
  -- ============================================================-- SNSFL_Complete_Laws_Catalog.lean-- ============================================================---- [9,9,9,9] :: {ANC} | Coordinate: [9,9,2,50]-- COMPLETE STRUCTURAL LAWS CATALOG — ALL ANCHOR SE…
  datacite Trent, Russell 2026 置信度 0.66
• SNSFL 42 STRUCTURAL LAWS CATALOG — ALL ANCHOR SESSIONS
  -- ============================================================-- SNSFL_Complete_Laws_Catalog.lean-- ============================================================---- [9,9,9,9] :: {ANC} | Coordinate: [9,9,2,50]-- COMPLETE STRUCTURAL LAWS CATALOG — ALL ANCHOR SE…
  datacite Trent, Russell 2026 置信度 0.66
• Realization of High-Performance Solar-Blind UV Detector via a ZrO₂/Ga₂ZO₃/LaOₓ p-i-n
  Solar-blind ultraviolet (UV) detection, operating within the 200-280 nm wavelength range, is of critical importance for applications such as missile warning and secure communication due to the inherent absence of solar background radiation. While β-Ga₂O₃ is a …
  datacite zhou, ying, liu, yingying, Chen, Junyu, Cheng, Jiang 等 2026 置信度 0.66 Uncategorized
• Realization of High-Performance Solar-Blind UV Detector via a ZrO₂/Ga₂ZO₃/LaOₓ p-i-n
  Solar-blind ultraviolet (UV) detection, operating within the 200-280 nm wavelength range, is of critical importance for applications such as missile warning and secure communication due to the inherent absence of solar background radiation. While β-Ga₂O₃ is a …
  datacite zhou, ying, liu, yingying, Chen, Junyu, Cheng, Jiang 等 2026 置信度 0.66 Uncategorized
• Band Modulations of 2d Metal Oxides for High-performance Electronic and Optoelectronic Applications
  As the size of silicon-based semiconductor devices is close to the application limit, the development of new semiconductor materials is imminent. Over the past decade, two-dimensional (2D) materials have attracted significant attention due to their unique prop…
  datacite Luan, Yange 2026 置信度 0.66 Functional materials
• Solid-State-Capacitive-Storage-GC
  This paper introduces a new class of solid state capacitive batteries that store energy in structured electric fields rather than chemical bonds. Building on the General Connectivity (GC) framework and recent advances in resonant nuclear power and coherence ba…
  datacite Sahota, Pal 2026 置信度 0.66
• Gallium Nitride (GaN) based Electric Vehicle Chargers: A study on Performance, Challenges, and Future Perspectives
  GaN, a wide-bandgap semiconductor material, has become a crucial technology for the creation of next-generation EV charging infrastructure because of its excellent electrical characteristics, small size, and high efficiency. The performance, challenges, and fu…
  datacite Vedant Kumar Saha, Dr. Sapan Kumar Saha 2026 置信度 0.66 GaNElectric Vehicle (EV)ChargerPower ElectronicsEfficiency
• Gallium Nitride (GaN) based Electric Vehicle Chargers: A study on Performance, Challenges, and Future Perspectives
  GaN, a wide-bandgap semiconductor material, has become a crucial technology for the creation of next-generation EV charging infrastructure because of its excellent electrical characteristics, small size, and high efficiency. The performance, challenges, and fu…
  datacite Vedant Kumar Saha, Dr. Sapan Kumar Saha 2026 置信度 0.66 GaNElectric Vehicle (EV)ChargerPower ElectronicsEfficiency
• Simulating strong-field electron-hole dynamics in solids probed by attosecond transient absorption spectroscopy
  We investigate the ultrafast electron dynamics of a model of a wide-bandgap material with inner, valence, and conduction bands excited by an intense few-femtosecond pump and monitored by a delayed attosecond extreme-ultraviolet probe pulse. Complementary compu…
  datacite Cavaletto, Stefano M., Madsen, Lars Bojer 2024 置信度 0.66 Optics (physics.optics)Materials Science (cond-mat.mtrl-sci)Atomic Physics (physics.atom-ph)FOS: Physical sciencesFOS: Physical sciences
• Optical and electronic properties of GaAsBi alloys for device applications
  GaAs1-xBix is a new III-V semiconductor alloy that shows promise for many optoelectronic applications. In this thesis, several characterization techniques were used to explore the properties of molecular beam epitaxy grown GaAs1-xBix alloys in a wide range of …
  datacite Masnadi Shirazi Nejad, Mostafa 2015 置信度 0.66
• Molecular beam epitaxy growth technology and properties of GaAsBi alloys
  In this thesis, molecular beam epitaxy (MBE) technology and the MBE growth of GaAsBi are investigated. MBE is a non-equilibrium technique whereby precisely controlled molecular beams are deposited onto a heated substrate at temperatures much lower than for equ…
  datacite Lewis, Ryan B. 2014 置信度 0.66
• Peter Svihra NIMA-1080-170742-2025
  Dataset corresponds to the research article "Exploring the design and measurements of next-generation 4H-SiC LGADs" written by Peter Švihra et al. and published in Nucl. Instrum. Methods Phys. Res. A 1080, 170742 (2025), https://doi.org/10.1016/j.nima.2025.170…
  datacite Švihra, Peter, Chochol, J., Kafka, V., Klimsza, A. 等 2026 置信度 0.66 4H-SiCsilicon carbideLGADTCTwide-bandgap semiconductor
• Impact of electron-phonon interactions on phonon transport in diamond and c-BN
  Diamond and cubic polymorph of boron nitride (c-BN) are two promising next-generation ultrawide bandgap semiconductor materials owning superior thermal properties. Although lattice vibration is the dominant mechanism of heat conduction in semiconductors, elect…
  datacite Huang, Xu, Guo, Zhixiong, Xi, Jinyang 2024 置信度 0.66 C-BNDiamondElectron-phonon interactionLatticeSemiconductor
• High thermal conductance across c-BN/diamond interface
  High thermal conductivity electronic components with low interfacial thermal resistance are of technological importance and fundamental interest of research. Diamond, a superhard material with ultrahigh thermal conductivity at room temperature, is desirable fo…
  datacite Huang, Xu, Guo, Zhixiong 2099 置信度 0.66 DiamondCubic boron nitrideThermal conductivityInterfacePhonon
• Tailored g-C3N4 Architectures for High-Performance Photodetection, Ultra-Trace Heavy Metal Sensing, and CO2-to-Methanol Photocatalysis
  Graphitic carbon nitride (g-C3N4) is a metal-free 2D semiconductor widely recognized for its low cost, chemical stability, and visible-light activity, offering a sustainable platform for next-generation energy and sensing technologies. This dissertation establ…
  datacite Zandi, Pegah 2026 置信度 0.66 Materials ScienceEngineeringEngineering--Environmental
• Copper pseudohalides as solution-processable hole-transport materials for opto/electronic applications
  This thesis presents the development of novel copper pseudohalide hole-transport layers (HTLs) for thin-film transistors (TFTs), organic photovoltaic (OPV) cells, perovskite solar cells (PSCs), and organic light-emitting diodes (OLEDs). Their impact on device …
  datacite Wijeyasinghe, Nilushi 2018 置信度 0.66
• High-throughput large-area plastic nanoelectronics
  Large-area electronics (LAE) manufacturing has been a key focus of both academic and industrial research, especially within the last decade. The growing interest is born out of the possibility of adding attractive properties (flexibility, light weight or minim…
  datacite Semple, James 2016 置信度 0.66
• Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures
  Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through its crystal defects,…
  datacite Powell, Megan, Parry, Euan, McGeough, Conor, Zotov, Alexander 等 2025 置信度 0.66 Applied Physics (physics.app-ph)Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Terahertz scanning tunneling microscopy on metals, semiconductors, and carbon nanostructures
  Scanning probe microscopes routinely provide atomic resolution of numerous materials, but lack the tools to investigate their ultrafast dynamics. Laser pulses can be generated in the femtosecond or even attosecond regime, but their spatial application is restr…
  datacite Marin Calzada, Jesus Alejandro 2024 置信度 0.66 terahertzstmthz-stmswcntsswcnt
• Atomic Silicon Dimer Wires on The Hydrogenated Silicon Surface
  Technology has been advancing toward miniaturization, with transistors now measuring just a few nanometers in size and powering our everyday electronic devices. As these devices approach their size limits due to quantum mechanical effects, studying structures …
  datacite Altincicek, Furkan M. 2025 置信度 0.66 Condensed Matter PhysicsFOS: Physical sciencesSurface ScienceScanning Tunneling MicroscopyNanotechnology
• Solar Photocatalytic Treatment of Oil Sands Process Water by Bismuth Tungstate Based Semiconductor Photocatalysts
  Bitumen extraction in Alberta produces large quantities of oil sands process water (OSPW), which contains highly recalcitrant organics such as naphthenic acids (NAs). NAs are known to be the major contributors to the OSPW toxicity that need effective treatment…
  datacite Meng, Lingjun 2022 置信度 0.66 photocatalystoil sands process water
• Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition
  Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is the development of a robust oxide with low density…
  datacite Afshar, Amir 2014 置信度 0.66 Density Functional TheoryGrowth MechanismAtomic Layer DepositionZinc OxideZirconium Oxide
• Gallium Oxide and Oxynitrides: Achieving Thin Film Crystallinity at Low Thermal Budgets
  Growing demand for electrical energy calls for more efficient electronic devices not only in terms of performance but also in terms of energy-efficient fabrication processes. With traditional semiconductors (such as silicon) reaching their limits in electrical…
  datacite Rafie Borujeny, Elham 2021 置信度 0.66 gallium oxidegallium nitrideGa2O3GaNalpha gallium oxide
• Physics-Informed Machine-Learning Based Modeling and Real-Time Hardware Emulation of Advanced Transportation Energy Systems
  The electrification of advanced transportation systems (ATSs), including aviation, maritime, and railway domains, demands high-fidelity real-time modeling. Traditional electromagnetic transient (EMT) methods, though accurate, struggle with complexity and compu…
  datacite Zhang, Songyang 2025 置信度 0.66 Digital-twinMachine learningMulti-domain systemReal-time systems
• β-Ga₂O₃ MOSFETs on Highly Uniform 2-Inch Unintentionally Doped Vertical Bridgman Substrates
  Beta-phase gallium oxide (β-Ga 2 O 3 ) is a promising ultra-wide-bandgap (UWBG) semiconductor for next-generation high-power electronics. A critical challenge for commercialization is validating the material quality and uniformity of large-area substrates. In …
  datacite Piel, Joshua, Koshi, Kimiyoshi, Ueda, Yuki, Liddy, Kyle 等 2026 置信度 0.66 Engineering
• β-Ga₂O₃ MOSFETs on Highly Uniform 2-Inch Unintentionally Doped Vertical Bridgman Substrates
  Beta-phase gallium oxide (β-Ga 2 O 3 ) is a promising ultra-wide-bandgap (UWBG) semiconductor for next-generation high-power electronics. A critical challenge for commercialization is validating the material quality and uniformity of large-area substrates. In …
  datacite Piel, Joshua, Koshi, Kimiyoshi, Ueda, Yuki, Liddy, Kyle 等 2026 置信度 0.66 Engineering
• Projektabschlussbericht GaN-HighPower: Kosten- und gewichtseffiziente PV- und Batterie-Wechselrichter großer Leistung für internationale Märkte der Zukunft durch Gallium-Nitrid (GaN) Halbleiter; Teilvorhaben des Fraunhofer IEE: Entwicklung eines Demonstrators für PV-Anwendungen auf GaN Basis
  Ziel des Verbundforschungsvorhabens GaN-HighPower war es, die nächste Generation kostengünstiger, ressourcenschonender und effizienter Stromrichter für Photovoltaik-Anwendungen zu erforschen und zu erproben, wobei der Fokus auf Stringwechselrichtern mit größer…
  datacite Sprunck, Sebastian, Peinsipp, Moritz, Wang, Fan, Kirchhof, Jörg 等 2025 置信度 0.66 500 | Naturwissenschaften
• High-speed, High-Resolution, Three-Dimensional Imaging of Threading Dislocations in beta-$Ga_{2}O_{3}$ via Phase-Contrast Microscopy
  This study presents a nondestructive, high-resolution method for three-dimensional imaging of threading dislocations in beta-$Ga_{2}O_{3}$ (010) using phase-contrast microscopy (PCM). A one-to-one correspondence between dislocation contrasts in PCM images and …
  datacite Ishiakwa, Yukari, Katsube, Daiki, Yao, Yongzhao, Sato, Koji 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Effect of electronic and nuclear factors on the dynamics of dye-to-semiconductor electron transfer
  Dye-to-semiconductor electron transfer is the initial step in many processes where light is used for the storage of information (e. g. color photography) or converted into electricity as in dye-sensitized solar cells. In the latter, interfacial charge injectio…
  datacite Wenger, Bernard 2006 置信度 0.66 Interfacial electron transfer dynamicsultrafast laser spectroscopydye sensitizationwide bandgap semiconductorsTiO2
• Thermal Characterization of Buried Interfaces in Multilayer Heterostructures via TDTR with Periodic Waveform Analysis
  Accurate evaluation of buried thermal interfaces is vital for understanding and optimizing heat dissipation in wide- and ultra-wide-bandgap (WBG/UWBG) semiconductor devices. Conventional time-domain thermoreflectance (TDTR) typically probes only near-surface t…
  datacite Zhang, Mingzhen, Jiang, Puqing, Yang, Ronggui 2026 置信度 0.66 Applied Physics (physics.app-ph)Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Spectroscopic Signatures of Structural Disorder and Electron-Phonon Interactions in Trigonal Selenium Thin Films for Solar Energy Harvesting
  Selenium is experiencing renewed interest as a elemental semiconductor for a range of optoelectronic and energy applications due to its irresistibly simple composition and favorable wide bandgap. However, its high volatility and low radiative efficiency make i…
  datacite Nielsen, Rasmus S., Medaille, Axel G., Torrens, Arnau, Segura-Blanch, Oriol 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)FOS: Physical sciencesFOS: Physical sciences
• Semiconductor qubits in practice
  In the past decade, semiconducting qubits have made great strides in overcoming decoherence, improving the prospects for scalability and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review, we describe …
  datacite Chatterjee, Anasua, Stevenson, Paul, De Franceschi, Silvano, Morello, Andrea 等 2021 置信度 0.66 Quantum information, Quantum metrology, Quantum simulation, Qubits, Semiconductors530 Physik
• Exploring optically active defects in wide-bandgap materials using fluorescence microscopy
  Defects in solid-state systems can be both detrimental, deteriorating the quality of materials, or desired, thanks to the novel functionality they bring. Optically active point defects, producing fluorescent light, are a great example of the latter. Naturally …
  datacite Glushkov, Evgenii 2021 置信度 0.66 van der Waals materialshexagonal boron nitridehBN2D materialsoptically active defects
• Toward Ultrawide Bandgap Engineering: Physical Properties of an α‐(TixGa1−x)2O3 Material Library
  Due to its high bandgap of 5.3–5.6 eV and high predicted breakdown field of 10 MV cm−1, much attention is drawn to the ultrawide bandgap semiconductor α‐Ga2O3 for applications in high‐power and solar blind optoelectronic devices. In contrast to the thermodynam…
  datacite Petersen, Clemens, Schultz, Thorsten, Andreassen, Magnus, Vogt, Sofie 等 2025 置信度 0.66 bandgap engineeringscombinatorialsGa2O3pulsed laser depositionTi2O3
• Applying temperature-sensitive electrical parameters to SiC power modules considering parasitic effects
  Temperature-sensitive electrical parameters (TSEPs) can be used to monitor the condition of unmodified power modules or to measure the virtual junction temperature of a semiconductor. The measurement of TSEPs on fast-switching wide-bandgap semiconductors poses…
  datacite Herwig, Daniel 2023 置信度 0.66 600 | Techniktemperature-sensitive electrical parameterscondition monitoringsilicon carbideMOSFET models
• Acoustic Phonon Characteristics of Gallium Oxide Single Crystals Investigated with Brillouin-Mandelstam Light Scattering Spectroscopy
  We report an investigation of the bulk and surface acoustic phonons in gallium oxide ultra-wide bandgap single crystals along various crystallographic directions using Brillouin-Mandelstam spectroscopy. Pronounced anisotropy in the acoustic phonon dispersion a…
  datacite Wright, Dylan, Guzman, Erick, Bijoy, Md. Sabbir Hossen, Wilson, Richard B. 等 2025 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Other Condensed Matter (cond-mat.other)FOS: Physical sciencesFOS: Physical sciences
• Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films
  We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure …
  datacite Wright, Dylan, Mudiyanselage, Dinusha Herath, Guzman, Erick, Fu, Xuke 等 2024 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciencesFOS: Physical sciences
• Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide
  Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many applications in quantum tec…
  datacite Abdedou, Y., Fuchs, A., Fuchs, P., Heiler, J. 等 2024 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Optics (physics.optics)FOS: Physical sciencesFOS: Physical sciences
• Electrostatic Effects of Self Trapped Holes in Gallium Oxide Devices
  Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically generated self-trapped ho…
  datacite Wriedt, Nathan, McGlone, Joe, Orlandini, Davide, Rajan, Siddharth 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Optics (physics.optics)FOS: Physical sciencesFOS: Physical sciences
• RHODaS IMD Dataset
  This Dataset includes all LCA results of the improved Integrated Motor Drive and its individual components (inverter, motor, gearbox, thermal management system) developed in the EU Horizon project RHODaS.The RHODaS project addresses the optimization of integra…
  datacite Pamminger, Rainer 2026 置信度 0.66
• RHODaS IMD Dataset
  This Dataset includes all LCA results of the improved Integrated Motor Drive and its individual components (inverter, motor, gearbox, thermal management system) developed in the EU Horizon project RHODaS.The RHODaS project addresses the optimization of integra…
  datacite Pamminger, Rainer 2026 置信度 0.66
• Wide-Bandgap Power Semiconductor Devices (GaN, SiC)
  datacite Sharma, Rohit K. Sharma, Patil, Meenal D. Patil, Joseph, Arvind Joseph, Qureshi, Sana F. Qureshi 2026 置信度 0.66
• Wide-Bandgap Power Semiconductor Devices (GaN, SiC)
  datacite Sharma, Rohit K. Sharma, Patil, Meenal D. Patil, Joseph, Arvind Joseph, Qureshi, Sana F. Qureshi 2026 置信度 0.66
• Multi-microscopy Characterisation of Cu(In,Ga)S₂ Absorbers for Future Tandem Solar Cells
  Tandem solar cells, which stack two or more single-junction cells with different bandgaps, are effective configurations to address the theoretical energy conversion limit of 33% for single junction solar cells. Cu(In,Ga)S₂ (CIGS) is a suitable semiconductor fo…
  datacite Hu, Yucheng 2025 置信度 0.66 CIGSMulti-microscopySolar CellsCathodoluminescenceEBSD
• Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films
  Gallium oxide (Ga$_2$O$_3$) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applications. In this work, we demonstrate for the first time the formation of plasmon…
  datacite Freitas, Inês, Sousa, Ana Sofia, Esteves, Duarte Magalhães, Sall, Mamour 等 2026 置信度 0.66 Materials Science (cond-mat.mtrl-sci)Mesoscale and Nanoscale Physics (cond-mat.mes-hall)FOS: Physical sciencesFOS: Physical sciences
• Direct laser writing of three-dimensional narrow bandgap and high refractive-index PbSe structures in a solution
  Three-dimensional (3D) micro/nano structures made of narrow electronic bandgap semiconductor materials have important applications in a wide range of disciplines. Direct laser writing (DLW) provides the unparalleled advantage to fabricate 3D arbitrary geometri…
  datacite Gan, Zongsong, Cao, Yaoyu, Gu, Min 2024 置信度 0.66
• Direct laser writing of three-dimensional narrow bandgap and high refractive-index PbSe structures in a solution
  Three-dimensional (3D) micro/nano structures made of narrow electronic bandgap semiconductor materials have important applications in a wide range of disciplines. Direct laser writing (DLW) provides the unparalleled advantage to fabricate 3D arbitrary geometri…
  datacite Gan, Zongsong, Cao, Yaoyu, Gu, Min 2024 置信度 0.66
• Coupled Plasmonic-Waveguide Resonance Geometry for Enhanced Infrared Absorption in Semiconductor Solar Cells
  Thin films are preferred for high photocurrent conversion efficiency, but strong photon absorption at photon energies below the bandgap (near and shortwave infrared) typically requires thicker semiconductor layers. To address this tradeoff, various optical app…
  datacite Abutoama, Mohammad 2026 置信度 0.66 Optics (physics.optics)FOS: Physical sciencesFOS: Physical sciences
• Supporting data for Probing Phonon Mean-Free-Path Distribution via Thickness-Dependent Thermal Conductivity in Epitaxial SrSnO₃
  This dataset reports thickness-dependent through-plane thermal conductivity measurements of ultra-wide-bandgap strontium stannate (SrSnO₃) thin films with thicknesses spanning 10–350 nm. The data were obtained using time-domain thermoreflectance (TDTR) on a se…
  datacite Zhang, Chi, Liu, Fengdeng, Kim, Donghwan, Xu, Xiaotian 等 2026 置信度 0.66 strontium stannateultra-wide bandgaptime-domain thermoreflectancethickness-dependent thermal conductivityphonon mean-free-path distribution
• Dynamic Optical Responses and Lattice Energy Reservoir Mechanisms in Halide Perovskites
  Metal halide perovskites (MHPs) exhibit a wide range of unconventional photophysical behaviours that cannot be fully explained by classical semiconductor models. Many of these behaviours, such as sub-bandgap absorption, excitation-dependent PL, and time-depend…
  datacite Li, Qi 2026 置信度 0.66 Functional materialsElectrical energy generation (incl. renewables, excl. photovoltaics)