半导体与先进封装 · 全部实体（第 3 / 100 页）

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• BACK MATTER
  crossref 2012-07-18T22:47:22Z 置信度 0.70
• Real-time detection of single-electron tunneling current
  crossref T. Fujisawa 2006-03-10T16:50:57Z 置信度 0.70
• Hermetic seals for semiconductor device packages
  crossref 2009-09-24T07:42:05Z 置信度 0.70
• Microwave semiconductor device-insulation trends and requirements
  crossref Eugene J. Feldman 2016-05-12T16:20:29Z 置信度 0.70
• Silicon carbide ultraviolet photodetectors
  crossref V.I. Sankin, P.P. Shkrebiy, N.S. Savkina 2004-07-08T16:05:44Z 置信度 0.70
• Electronic transport in carbon nanotube field-effect transistors
  crossref J. Appenzeller 2004-07-08T20:05:44Z 置信度 0.70
• Squeezing and controlled spontaneous emission in semiconductor lasers
  crossref Y. Yamamoto 2002-11-19T19:49:16Z 置信度 0.70
• Scattering Mechanisms for Semiconductor Transport Calculations
  crossref J. Bude 2011-05-30T13:00:36Z 置信度 0.70
• Transport Properties
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Magnetic Semiconductors
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• Semiconductor heterostructures based on earth-abundant elements for photovoltaic applications : from material to device
  Hétérostructures de semi-conducteurs à base d'éléments abondants pour le photovoltaïque : du matériau au composant Face aux limites économiques, énergétiques et environnementales des semi-conducteurs traditionnels, les oxydes métalliques, à base d'éléments abo…
  crossref Wafae El Berjali 2026-04-09T08:45:42Z 置信度 0.70
• Thermal management in semiconductor device packaging
  crossref 2008-01-26T18:03:03Z 置信度 0.70
• Introduction
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.70
• Ion implantation in semiconductor device technology
  crossref 2008-01-26T21:05:12Z 置信度 0.70
• Semiconductor device manufacture
  crossref Phillip R. Edwards 2011-09-07T09:38:53Z 置信度 0.70
• 4398267 Semiconductor memory device
  crossref Tohru Furuyama 2003-03-15T01:06:46Z 置信度 0.70
• Reliability and Failure Analysis
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Physical models for semiconductor device simulation
  crossref Andreas Schenk 2007-09-11T02:53:04Z 置信度 0.70
• Develop On-Demand nanoplasmonic Device Concepts in a Semiconductor Compatible Hybrid System. Final Report
  crossref Cheng Cen 2022-02-14T03:09:00Z 置信度 0.70
• Self‐Electrooptic‐Effect Device
  crossref 2011-06-25T04:00:10Z 置信度 0.70
• Phonon heat dissipation in silicon
  crossref Zlatan Aksamija, Umberto Ravaioli 2008-01-11T20:07:19Z 置信度 0.70
• Band Structure Engineering and its Device Applications
  crossref F. CAPASSO 2013-11-19T00:34:39Z 置信度 0.70
• Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures.
  crossref H. Kroemer 2017-09-13T15:53:27Z 置信度 0.70
• Gunn Diode and IMPATT Diode Modelling
  crossref Michael Shur 2011-12-11T04:54:12Z 置信度 0.70
• Technical challenges in commercial SiC power MOSFETs
  crossref Anant Agarwal 2008-01-11T20:07:19Z 置信度 0.70
• Semiconductor device and capacitor
  crossref 2003-01-09T09:01:52Z 置信度 0.70
• Degradation of Hexagonal Silicon Carbide-based Bipolar Devices
  crossref M. Skowronski 2006-03-10T16:50:57Z 置信度 0.70
• Scheduling semiconductor device test operations
  crossref T. Carmon-Freed 2002-12-24T02:38:00Z 置信度 0.70
• Transport in Metal-Molecule-Silicon Devices
  crossref A. Scott, D. Janes 2006-03-10T11:50:57Z 置信度 0.70
• Electron Scattering
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.70
• 4404048 Semiconductor device manufacture
  crossref DirkA Vogelzang 2003-03-15T06:06:46Z 置信度 0.70
• Telecom-wavelength electroluminescence from processible quantum dot nanocrystals
  crossref E.H. Sargent 2004-07-08T20:05:44Z 置信度 0.70
• Thin film transistors with buckled gate
  crossref Sanjiv Sambandan 2012-01-30T16:47:17Z 置信度 0.70
• Application of Electron Tomography for Semiconductor Device Analysis
  crossref C. Kübel 2006-02-24T23:04:51Z 置信度 0.70
• Coherent Transport and Mesoscopic Devices
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.70
• AC analysis of UMOSFET ACCUFET
  crossref N. Peyvast, M. Fathipour 2010-01-20T14:20:17Z 置信度 0.70
• New techniques for semiconductor device microminiaturization
  crossref 2008-01-26T17:44:02Z 置信度 0.70
• Terahertz sources and detectors based on nonlinear diodes
  crossref T.W. Crowe 2004-07-08T20:05:44Z 置信度 0.70
• Carrier and Doping Density
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Call for Papers: 2013 IEEE Compound Semiconductor IC Symposium
  crossref 2013-06-10T18:01:50Z 置信度 0.70
• Quantum behavior
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.70
• Simulating novel EM effects
  crossref Daniel P. Ceperley, Andrew Neureuther 2008-01-12T01:07:19Z 置信度 0.70
• Computer-Aided Analysis of Integrated Circuit Reliability
  crossref P. Mauri 2012-07-29T00:04:34Z 置信度 0.70
• A semiconductor GMR device [InAlAs-InAs]
  crossref K. Yoh, T. Doi, Y. Katano, S. Abe 等 2002-11-13T16:55:27Z 置信度 0.70
• <title>Optical Determination Of Semiconductor Device Edge Profiles</title>
  crossref M. A. Habegger 2012-10-02T20:25:44Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2013-11-13T21:57:54Z 置信度 0.70
• A metal-oxide-semiconductor varactor
  crossref F. Svelto, P. Erratico, S. Manzini, R. Castello 2002-08-24T18:46:34Z 置信度 0.70
• UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector
  crossref Ida Khodami, Farhad Taghibakhsh, Karim S. Karim 2008-08-27T18:10:11Z 置信度 0.70
• A bistable MOSFET-type metal-tunnel insulator-semiconductor switch
  crossref J.M. Dell, M.J. Davis, A.G. Nassibian 2008-01-12T00:52:49Z 置信度 0.70
• Potential impact of emerging semiconductor technologies on advanced power electronic systems
  crossref K. Shenai 2002-08-24T18:32:16Z 置信度 0.70
• On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors
  crossref 2014-05-14T18:02:10Z 置信度 0.70
• Collective plasmon modes in nanoparticle assemblies
  crossref Stephan Link 2012-01-30T16:47:17Z 置信度 0.70
• High Power InGaN LEDs & amp; Applications
  crossref M.R. Krames 2006-03-10T11:50:57Z 置信度 0.70
• SEMICONDUCTOR DEVICE PHYSICS AND THE MODELING OF SMALL SEMICONDUCTOR DEVICES
  crossref S. E. LAUX, M. V. FISCHETTI 2012-10-22T03:19:18Z 置信度 0.70
• Plasma waves in graphene-based heterostructures and their terahertz device applications
  crossref Victor Ryzhii, Akira Satou, Maxim Ryzhii, Fedir Vasko 等 2008-01-11T20:07:19Z 置信度 0.70
• Limited reaction processing: In-situ metal—oxide—semiconductor capacitors
  crossref J.C. Sturm, C.M. Gronet, J.F. Gibbons 2008-01-12T00:52:49Z 置信度 0.70
• Annealing effects of NTD silicon for semiconductor power devices
  crossref F.A. Selim, C.K. Chu, J.E. Johnson 2008-01-12T00:52:49Z 置信度 0.70
• 4335362 Semiconductor device and a method of contacting a partial region of a semiconductor surface
  crossref R.P. Salathe, E.G. Badertscher 2004-11-13T16:59:08Z 置信度 0.70
• <title>Laser Applications To Semiconductor Device Processing</title>
  crossref Rajiv R. Shah 2012-10-02T22:30:29Z 置信度 0.70
• Mechanical standardization of semiconductor devices
  crossref 2015-06-09T20:10:57Z 置信度 0.70
• Characterizing damage to thin oxides induced during programming floating trap non-volatile semiconductor memory devices
  crossref S.J. Wrazien, Yu Wang, B.M. Khan, M.H. White 2004-07-08T16:05:44Z 置信度 0.70
• Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation
  crossref A. Piccirillo, P.E. Bagnoli 2012-07-28T20:40:40Z 置信度 0.70
• Semiconductor waveguides for optical switching
  crossref Suzanne Laval 2005-08-20T07:21:46Z 置信度 0.70
• Fitting considerations of polynomial device models [semiconductor device modeling]
  crossref T. Rahkonen, A. Heiskanen 2003-11-04T18:56:54Z 置信度 0.70
• Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO/sub 3//Si
  crossref Kwang-Ho Kim 2002-08-24T14:46:34Z 置信度 0.70
• The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
  crossref 2010-08-24T18:55:00Z 置信度 0.70
• The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
  crossref 2010-07-27T18:51:14Z 置信度 0.70
• The accumulation channel driven bipolar transistor (ACBT): a new MOS-gated semiconductor power device
  crossref N. Thapar, B.J. Baliga 2002-11-22T21:42:57Z 置信度 0.70
• The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
  crossref 2010-09-29T18:01:18Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-01-27T18:31:23Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2022-11-29T19:09:57Z 置信度 0.70
• Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device
  crossref K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya 等 2010-11-19T16:32:06Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-05-23T18:43:05Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2022-12-28T18:43:40Z 置信度 0.70
• Plasma etching of silicon for semiconductor device fabrication
  crossref 2008-12-09T14:00:08Z 置信度 0.70
• Organic semiconductor strain sensors
  crossref Soyoun Jung, T. Jackson 2005-12-13T20:55:52Z 置信度 0.70
• Optical Properties of Active Semiconductor Waveguides For Integrated Photonics Device Modeling
  crossref Valery I. Tolstikhin 2014-10-14T17:54:28Z 置信度 0.70
• Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs
  crossref R.T. Webster, A.F.M. Anwar 2004-07-08T20:05:44Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-04-26T18:46:12Z 置信度 0.70
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-03-24T18:29:28Z 置信度 0.70
• High performance semiconductor device simulation on shared memory parallel computers
  crossref M. Hahad, P. Hopper 2005-08-29T08:47:11Z 置信度 0.70
• Reliability Limitations of Metal Electrodes on GaAs
  crossref H. L. Hartnagel 2012-07-28T20:04:34Z 置信度 0.70
• Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication
  crossref 2020-12-22T00:45:30Z 置信度 0.70
• CMOS Device Reliability for Emerging Cryogenic Space Electronics Applications
  crossref Tianbing Chen, L. Najafizadeh, Chendong Zhu, A. Ahmed 等 2006-03-10T11:50:57Z 置信度 0.70
• Purging: A reliability assurance technique for new technology semiconductor devices
  crossref E.I. Gordon, F.R. Nash, R.L. Hartman 2008-01-12T00:52:49Z 置信度 0.70
• 4H-SiC SIT device for RF heating applications
  crossref S. Ortolland 2006-07-21T21:28:34Z 置信度 0.70
• Noise and fluctuations
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.70
• Manipulation of ferromagnetism in magnetic semiconductor field effect transistors
  crossref H. Ohno 2003-06-25T22:14:31Z 置信度 0.70
• Slope efficiency versus cavity length in quantum dot lasers
  crossref L.V. Asryan 2006-03-10T11:50:57Z 置信度 0.70
• Neutral beam technology for future nano-device
  crossref Seiji Samukawa 2017-05-16T19:39:14Z 置信度 0.70
• Full 3D Process and Device Simulation for FinFET optimization
  crossref M. Nawaz, P. Haibach, E. Landgraf, W. Rosner 等 2006-03-10T11:50:57Z 置信度 0.70
• Advanced semiconductor on insulator substrates for LP and HP digital CMOS applications
  crossref Bich-Yen Nguyen, George Celler, Ian Cayrefourcq, Paul Patruno 等 2008-01-11T20:07:19Z 置信度 0.70
• Semiconductor Material and Device Characterization via Scanning Microwave Microscopy
  crossref Hassan Tanbakuchi, Ferry Kienberger, Matt Richter, Michael Dieudonne 等 2013-11-21T15:52:07Z 置信度 0.70
• Energy band diagram of metal-oxide-semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric
  crossref Chin-Lung Cheng, Kuei-Shu Chang-Liao 2012-01-30T16:47:17Z 置信度 0.70
• The ultimate MOSFET and the limits of miniaturization
  crossref Mark Lundstrom 2008-01-11T20:07:19Z 置信度 0.70
• High Speed IC Reliability : Concerns and Advances
  crossref A. A. Iliadis 2012-07-29T00:04:34Z 置信度 0.70
• Charge‐Based and Probe Characterization
  crossref 2006-11-02T11:48:26Z 置信度 0.70
• Increased transconductance MOSFET device
  crossref Alin Voicu-Spineanu, Dragos Dobrescu, Lidia Dobrescu 2016-12-19T22:08:11Z 置信度 0.70
• Introduction
  crossref Peter A. Markowich 2013-01-05T11:29:38Z 置信度 0.70
• An Adaptive Linearization Method for a Constraint Satisfaction Problem in Semiconductor Device Design Optimization
  The device optimization is a very important element in semiconductor technology advancement. Its objective is to find a design point for a semiconductor device so that the optimized design goal meets all specified constraints. As in other engineering fields, a…
  crossref Chih-Hui Chang 2026-04-12T05:19:22Z 置信度 0.70