半导体与先进封装 · 全部实体（第 3 / 100 页）

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• Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices
  Thin amorphous films were deposited by oxygen‐assisted pyrolysis of tantalum dichloro‐diethoxy‐acetylacetonate. Index of refraction and the optical gap measurements of the films were in agreement with previous results. The d‐c conduction mechanism appears to b…
  openalex E. Kaplan, Mária Balog, D. Frohman‐Bentchkowsky 1976-10-01 置信度 0.78 Tantalum pentoxideMaterials scienceTantalumChemical vapor depositionDielectric
• Determination of urea with an ammonia gas-sensitive semiconductor device in combination with urease
  openalex Fredrik Winquist, Anita Lloyd Spetz, I. Lundström, Bengt Danielsson 1984-01-01 置信度 0.67 ChemistryUreaseUreaChromatographyAmmonia
• Semiconductors for organic transistors
  Organic molecules/polymers with a π-conjugated (hetero)aromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. Howev…
  openalex Antonio Facchetti 2007-02-17 置信度 0.78 Organic field-effect transistorOrganic semiconductorTransistorMaterials scienceSemiconductor
• An introduction to the physics of semiconductor devices
  Chapter 1 Overview Chapter 2 Material properties and basic P-N junction relations Chapter 3 P-N Junction diodes Chapter 4 Bipolar Junction Transistors Chapter 5 MOS Field Effect Transistors Chapter 6 Junction Field Effect Transistors Chapter 7 Overview of spec…
  openalex 1999-07-01 置信度 0.75 SemiconductorEngineering physicsPhysicsOptoelectronics
• A straightforward analytical method for extraction of semiconductor device transient thermal parameters
  openalex F.N. Masana 2006-11-16 置信度 0.67 Transient (computer programming)ThermalSemiconductor deviceSemiconductorTime domain
• Materials for semiconductor devices that can bend, fold, twist, and stretch
  openalex John A. Rogers 2014-06-01 置信度 0.69 Fold (higher-order function)TwistSemiconductorMaterials scienceEngineering physics
• Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application
  Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs. The existing reliability predictions for the power electronics converter …
  openalex Ke Ma, Ui‐Min Choi, Frede Blaabjerg 2018-01-26 置信度 0.80 Reliability (semiconductor)Power (physics)Reliability engineeringEngineeringPower electronics
• Temperature adaptive driving of power semiconductor devices
  This work is about the development of a temperature-dependent driving strategy for power transistors, aimed at counterbalancing temperature related increases in their on-state resistance and power losses by a corresponding increase of the amplitude of the appl…
  openalex Wu Liang, Alberto Castellazzi 2010-07-01 置信度 0.78 Reliability (semiconductor)Power semiconductor deviceSemiconductor devicePower (physics)Transistor
• Improvement of zone control induction heating equipment for high-speed processing of semiconductor devices
  In order to process a semiconductor device of high quality, uniform heating is necessary, but it is not easy to heat uniformly with conventional induction heating equipment. To solve this problem, zone control induction heating equipment has been jointly devel…
  openalex Daisuke Miyagi, A. V. S. S. R. Sai, N. Takahashi, Naoki Uchida 等 2006-01-25 置信度 0.78 Induction heatingInduction coilElectromagnetic coilHeating elementSemiconductor
• Diamond tips and cantilevers for the characterization of semiconductor devices
  openalex A. Malavé, E. Oesterschulze, W. Kulisch, Thomas Trenkler 等 1999-03-01 置信度 0.67 DiamondMaterials scienceScanning probe microscopyCantileverSilicon
• Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
  We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off curre…
  openalex Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya 等 2003-05-22 置信度 0.78 Materials scienceOptoelectronicsFabricationThin-film transistorSemiconductor
• Power electronics: circuits, devices, and applications
  1. Introduction. 2. Power Semiconductor Diodes and Circuits. 3. Diode Rectifiers. 4. Power Transistors. 5. DC-DC Converters. 6. Pulse-width Modulated Inverters. 7. Thyristors. 8. Resonant Pulse Inverters. 9. Multilevel Inverters. 10. Controlled Rectifiers. 11.…
  openalex 1989-02-01 置信度 0.78 ThyristorElectronic circuitElectrical engineeringCommutationPower semiconductor device
• Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling
  openalex D. K. Ferry, A.M. Kriman, Meng Jeng Kann, Ravindra P. Joshi 1991-08-01 置信度 0.67 Monte Carlo methodScatteringStatistical physicsMonte Carlo molecular modelingPhysics
• Control of Schottky Barrier Heights on High- K Gate Dielectrics for Future Complementary Metal-Oxide Semiconductor Devices
  The calculated Schottky barrier heights of polar and nonpolar interfaces of many metals on HfO2 high dielectric constant gate oxide have been found to vary strongly with the metal work function and also with oxide termination, with relatively little Fermi leve…
  openalex K. Tse, John Robertson 2007-08-24 置信度 0.78 OxideDielectricSchottky diodeSchottky barrierMaterials science
• An Industry-Based Survey of Reliability in Power Electronic Converters
  A questionnaire survey was carried out to determine the industrial requirements and expectations of reliability in power electronic converters. The survey was subjective and conducted with a number of high-profile semiconductor manufacturers, integrators, and …
  openalex Shaoyong Yang, A.T. Bryant, Philip Mawby, Dawei Xiang 等 2011-03-15 置信度 0.80 Reliability (semiconductor)ConvertersAerospaceReliability engineeringPower (physics)
• Numerical modeling of magnetic-field-sensitive semiconductor devices
  Semiconductor devices in the presence of a magnetic field have been modeled numerically. The two-dimensional distributions of the electric potential, the electron concentration, and the hole concentration in a silicon slab exposed to a magnetic field have been…
  openalex L. Andor, H. Baltes, Arokia Nathan, H. G. Schmidt-Weinmar 1985-07-01 置信度 0.78 Magnetic fieldSiliconDiodeSemiconductorSemiconductor device
• Semiconductor device simulation at NTT
  The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In t…
  openalex K. Yokoyama, M. Tomizawa, A. Yoshii, T. Sudo 1985-10-01 置信度 0.78 Semiconductor deviceKey (lock)Monte Carlo methodSemiconductorComputer science
• Semiconductor Devices in Solid-State/Hybrid Circuit Breakers: Current Status and Future Trends
  Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well a…
  openalex Chunyang Gu, Patrick Wheeler, Alberto Castellazzi, Alan J. Watson 等 2017-04-06 置信度 0.80 Circuit breakerElectrical engineeringSemiconductor devicePower (physics)Power semiconductor device
• Electromagnetic interfacing of semiconductor devices and circuits
  This paper discusses the interactions between semiconductor devices and electromagnetic waves and the possible ways to interface modern devices and circuits in the mm-wave range. This topic is very important for advancing current MMIC designs and for developin…
  openalex Samir El‐Ghazaly, T. Itoh 2002-11-22 置信度 0.78 InterfacingSemiconductor deviceFinite-difference time-domain methodMonolithic microwave integrated circuitElectronic circuit
• Finite Difference Methods for the Transient Behavior of a Semiconductor Device
  crossref Jim Douglas, Ye Yuan 1987-01-01 置信度 0.63 Transient (computer programming)Semiconductor deviceFinite difference methodTransient analysisComputer science
• 2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods
  openalex José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi‐Wang Shu 2005-10-28 置信度 0.67 Monte Carlo methodBoltzmann equationSolverDirect simulation Monte CarloStatistical physics
• 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  openalex 2019-05-01 置信度 0.71 Electrical engineeringPower (physics)Computer scienceEngineering physicsEngineering
• Schottky Diode Frequency Multipliers
  crossref Jack East 2018-12-16T04:37:31Z 置信度 0.56
• 4464750 Semiconductor memory device
  crossref Take Tatematsu 2003-03-15T06:06:46Z 置信度 0.61
• Using SiGe technology in extreme environments
  crossref John D. Cressler 2008-01-11T20:07:19Z 置信度 0.55
• Bipolar Junction Transistors
  crossref John C. Cowles 2018-12-16T09:37:31Z 置信度 0.60
• Numerical Techniques — The Finite Element Method
  crossref Stephen D. Mobbs 2011-10-05T05:14:30Z 置信度 0.56
• Two-Photon Emission from Semiconductor Device
  crossref Alex Hayat, Meir Orenstein 2013-04-25T20:22:17Z 置信度 0.63
• Bipolar Junction Transistors
  crossref John Cowles 2010-02-23T15:02:18Z 置信度 0.58
• Heterostructure Bipolar Transistors
  crossref William Liu 2010-02-23T15:02:18Z 置信度 0.58
• Equivalent Circuit Models for Silicon Devices
  crossref Margaret E. Clarke 2011-10-05T05:14:30Z 置信度 0.63
• Gallium Arsenide versus Silicon — Applications and Modelling
  crossref Michael Shur 2011-10-05T05:14:30Z 置信度 0.63
• Carbon nanotube devices for GHz to THz applications
  crossref P.J. Burke 2004-07-08T16:05:44Z 置信度 0.58
• Semiconductor device developments in the 1960s
  crossref 2005-12-10T11:23:08Z 置信度 0.61
• The evolution of silicon-on-insulator MOSFETs
  crossref J.-P. Colinge 2004-07-08T20:05:44Z 置信度 0.61
• A carbon nanotube capacitor structure
  crossref J.D. Wood, M.M. Budnik 2008-01-11T20:07:19Z 置信度 0.55
• Optical Properties
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.57
• BACK MATTER
  crossref 2012-07-18T22:47:22Z 置信度 0.56
• Real-time detection of single-electron tunneling current
  crossref T. Fujisawa 2006-03-10T16:50:57Z 置信度 0.55
• Hermetic seals for semiconductor device packages
  crossref 2009-09-24T07:42:05Z 置信度 0.61
• Microwave semiconductor device-insulation trends and requirements
  crossref Eugene J. Feldman 2016-05-12T16:20:29Z 置信度 0.63
• Silicon carbide ultraviolet photodetectors
  crossref V.I. Sankin, P.P. Shkrebiy, N.S. Savkina 2004-07-08T16:05:44Z 置信度 0.61
• Electronic transport in carbon nanotube field-effect transistors
  crossref J. Appenzeller 2004-07-08T20:05:44Z 置信度 0.58
• Squeezing and controlled spontaneous emission in semiconductor lasers
  crossref Y. Yamamoto 2002-11-19T19:49:16Z 置信度 0.58
• Scattering Mechanisms for Semiconductor Transport Calculations
  crossref J. Bude 2011-05-30T13:00:36Z 置信度 0.60
• Transport Properties
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.57
• Magnetic Semiconductors
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.61
• Semiconductor heterostructures based on earth-abundant elements for photovoltaic applications : from material to device
  Hétérostructures de semi-conducteurs à base d'éléments abondants pour le photovoltaïque : du matériau au composant Face aux limites économiques, énergétiques et environnementales des semi-conducteurs traditionnels, les oxydes métalliques, à base d'éléments abo…
  crossref Wafae El Berjali 2026-04-09T08:45:42Z 置信度 0.82 philosophycell biologybiodiversitycondensed matter physicstaxonomy
• Thermal management in semiconductor device packaging
  crossref 2008-01-26T18:03:03Z 置信度 0.61
• Introduction
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.56
• Ion implantation in semiconductor device technology
  crossref 2008-01-26T21:05:12Z 置信度 0.61
• Semiconductor device manufacture
  crossref Phillip R. Edwards 2011-09-07T09:38:53Z 置信度 0.63
• 4398267 Semiconductor memory device
  crossref Tohru Furuyama 2003-03-15T01:06:46Z 置信度 0.61
• Reliability and Failure Analysis
  crossref 2006-11-02T11:48:26Z 置信度 0.55
• Physical models for semiconductor device simulation
  crossref Andreas Schenk 2007-09-11T02:53:04Z 置信度 0.61
• Develop On-Demand nanoplasmonic Device Concepts in a Semiconductor Compatible Hybrid System. Final Report
  crossref Cheng Cen 2022-02-14T03:09:00Z 置信度 0.64
• Self‐Electrooptic‐Effect Device
  crossref 2011-06-25T04:00:10Z 置信度 0.60
• Phonon heat dissipation in silicon
  crossref Zlatan Aksamija, Umberto Ravaioli 2008-01-11T20:07:19Z 置信度 0.58
• Band Structure Engineering and its Device Applications
  crossref F. CAPASSO 2013-11-19T00:34:39Z 置信度 0.60
• Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures.
  crossref H. Kroemer 2017-09-13T15:53:27Z 置信度 0.63
• Gunn Diode and IMPATT Diode Modelling
  crossref Michael Shur 2011-12-11T04:54:12Z 置信度 0.56
• Technical challenges in commercial SiC power MOSFETs
  crossref Anant Agarwal 2008-01-11T20:07:19Z 置信度 0.61
• Semiconductor device and capacitor
  crossref 2003-01-09T09:01:52Z 置信度 0.61
• Degradation of Hexagonal Silicon Carbide-based Bipolar Devices
  crossref M. Skowronski 2006-03-10T16:50:57Z 置信度 0.61
• Scheduling semiconductor device test operations
  crossref T. Carmon-Freed 2002-12-24T02:38:00Z 置信度 0.61
• Transport in Metal-Molecule-Silicon Devices
  crossref A. Scott, D. Janes 2006-03-10T11:50:57Z 置信度 0.61
• Electron Scattering
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.57
• 4404048 Semiconductor device manufacture
  crossref DirkA Vogelzang 2003-03-15T06:06:46Z 置信度 0.61
• Telecom-wavelength electroluminescence from processible quantum dot nanocrystals
  crossref E.H. Sargent 2004-07-08T20:05:44Z 置信度 0.58
• Thin film transistors with buckled gate
  crossref Sanjiv Sambandan 2012-01-30T16:47:17Z 置信度 0.63
• Application of Electron Tomography for Semiconductor Device Analysis
  crossref C. Kübel 2006-02-24T23:04:51Z 置信度 0.61
• Coherent Transport and Mesoscopic Devices
  crossref Umesh K. Mishra, Jasprit Singh 2007-11-05T15:40:22Z 置信度 0.58
• AC analysis of UMOSFET ACCUFET
  crossref N. Peyvast, M. Fathipour 2010-01-20T14:20:17Z 置信度 0.58
• New techniques for semiconductor device microminiaturization
  crossref 2008-01-26T17:44:02Z 置信度 0.61
• Terahertz sources and detectors based on nonlinear diodes
  crossref T.W. Crowe 2004-07-08T20:05:44Z 置信度 0.55
• Carrier and Doping Density
  crossref 2006-11-02T11:48:26Z 置信度 0.55
• Call for Papers: 2013 IEEE Compound Semiconductor IC Symposium
  crossref 2013-06-10T18:01:50Z 置信度 0.63
• Quantum behavior
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.56
• Simulating novel EM effects
  crossref Daniel P. Ceperley, Andrew Neureuther 2008-01-12T01:07:19Z 置信度 0.55
• Computer-Aided Analysis of Integrated Circuit Reliability
  crossref P. Mauri 2012-07-29T00:04:34Z 置信度 0.56
• A semiconductor GMR device [InAlAs-InAs]
  crossref K. Yoh, T. Doi, Y. Katano, S. Abe 等 2002-11-13T16:55:27Z 置信度 0.61
• <title>Optical Determination Of Semiconductor Device Edge Profiles</title>
  crossref M. A. Habegger 2012-10-02T20:25:44Z 置信度 0.63
• Mechanical standardization of semiconductor devices
  crossref 2013-11-13T21:57:54Z 置信度 0.63
• A metal-oxide-semiconductor varactor
  crossref F. Svelto, P. Erratico, S. Manzini, R. Castello 2002-08-24T18:46:34Z 置信度 0.58
• UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector
  crossref Ida Khodami, Farhad Taghibakhsh, Karim S. Karim 2008-08-27T18:10:11Z 置信度 0.58
• A bistable MOSFET-type metal-tunnel insulator-semiconductor switch
  crossref J.M. Dell, M.J. Davis, A.G. Nassibian 2008-01-12T00:52:49Z 置信度 0.61
• Potential impact of emerging semiconductor technologies on advanced power electronic systems
  crossref K. Shenai 2002-08-24T18:32:16Z 置信度 0.61
• On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors
  crossref 2014-05-14T18:02:10Z 置信度 0.63
• Collective plasmon modes in nanoparticle assemblies
  crossref Stephan Link 2012-01-30T16:47:17Z 置信度 0.56
• High Power InGaN LEDs & amp; Applications
  crossref M.R. Krames 2006-03-10T11:50:57Z 置信度 0.61
• SEMICONDUCTOR DEVICE PHYSICS AND THE MODELING OF SMALL SEMICONDUCTOR DEVICES
  crossref S. E. LAUX, M. V. FISCHETTI 2012-10-22T03:19:18Z 置信度 0.63
• Plasma waves in graphene-based heterostructures and their terahertz device applications
  crossref Victor Ryzhii, Akira Satou, Maxim Ryzhii, Fedir Vasko 等 2008-01-11T20:07:19Z 置信度 0.58
• Limited reaction processing: In-situ metal—oxide—semiconductor capacitors
  crossref J.C. Sturm, C.M. Gronet, J.F. Gibbons 2008-01-12T00:52:49Z 置信度 0.61
• Annealing effects of NTD silicon for semiconductor power devices
  crossref F.A. Selim, C.K. Chu, J.E. Johnson 2008-01-12T00:52:49Z 置信度 0.61
• 4335362 Semiconductor device and a method of contacting a partial region of a semiconductor surface
  crossref R.P. Salathe, E.G. Badertscher 2004-11-13T16:59:08Z 置信度 0.61
• <title>Laser Applications To Semiconductor Device Processing</title>
  crossref Rajiv R. Shah 2012-10-02T22:30:29Z 置信度 0.63
• Mechanical standardization of semiconductor devices
  crossref 2015-06-09T20:10:57Z 置信度 0.63
• Characterizing damage to thin oxides induced during programming floating trap non-volatile semiconductor memory devices
  crossref S.J. Wrazien, Yu Wang, B.M. Khan, M.H. White 2004-07-08T16:05:44Z 置信度 0.61
• Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelectronic Device Passivation
  crossref A. Piccirillo, P.E. Bagnoli 2012-07-28T20:40:40Z 置信度 0.63
• Semiconductor waveguides for optical switching
  crossref Suzanne Laval 2005-08-20T07:21:46Z 置信度 0.58