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• Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells
  Device modeling of CH3NH3PbI3−xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefor…
  openalex Takashi Minemoto, Masashi Murata 2014-08-04 置信度 0.72 Perovskite (structure)Materials scienceSolar cellOptoelectronicsSemiconductor
• Conditioning of the Steady State Semiconductor Device Problem
  When solving numerically the steady state semiconductor device problem using appropriate discretizations, extremely large condition numbers are often encountered for the linearized discrete device problem. These condition numbers are so large that, if they rep…
  openalex Uri M. Ascher, Peter A. Markowich, Christian Schmeiser, Herbert Steinrück 等 1989-02-01 置信度 0.72 ScalingMathematicsSteady state (chemistry)ConditioningStability (learning theory)
• Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT
  The photovoltaic and photocatalytic systems generally use at least one semiconductor in their architecture which role is to absorb the light or to transport the charge carriers. Despite the large variety of working principles encountered in these systems, they…
  openalex Tangui Le Bahers, Michel Rérat, Philippe Sautet 2014-02-28 置信度 0.72 SemiconductorBand gapCharge carrierMaterials scienceDensity functional theory
• Recent Trends in Novel Semiconductor Devices
  openalex Archana Pandey 2022-01-28 置信度 0.72 Materials scienceSubthreshold conductionTransistorSemiconductorSemiconductor device
• Active terahertz metamaterial devices
  openalex Hou‐Tong Chen, Willie J. Padilla, Joshua M. O. Zide, A. C. Gossard 等 2006-11-01 置信度 0.72 Terahertz radiationMetamaterialOptoelectronicsTerahertz gapDetector
• Device modeling and simulations toward sub-10 nm semiconductor devices
  This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated …
  openalex Nobuyuki Sano, Akira Hiroki, K. Matsuzawa 2002-03-01 置信度 0.72 Semiconductor deviceField-effect transistorSemiconductorMOSFETTransistor
• Small Molecule Organic Semiconductors on the Move: Promises for Future Solar Energy Technology
  This article is written from an organic chemist's point of view and provides an up-to-date review about organic solar cells based on small molecules or oligomers as absorbers and in detail deals with devices that incorporate planar-heterojunctions (PHJ) and bu…
  openalex Amaresh Mishra, Peter Bäuerle 2012-02-17 置信度 0.72 Organic solar cellCommercializationOrganic semiconductorNanotechnologyMaterials science
• The properties, physics, and design of semiconductor devices
  openalex John N. Shive 1959-01-01 置信度 0.72 SemiconductorEngineering physicsPhysicsNanotechnologyMaterials science
• Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension
  The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effe…
  openalex Philip Calado, Ilario Gelmetti, Benjamin Hilton, Mohammed Azzouzi 等 2022-05-25 置信度 0.72 SemiconductorMaterials scienceOptoelectronicsIonic bondingCharge carrier
• Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications
  In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal…
  openalex Hongfang Wang, Fred Wang, Junhong Zhang 2008-01-01 置信度 0.72 Figure of meritPower densityPower semiconductor devicePower (physics)Power module
• Characterization of Low-Temperature Sintered Nanoscale Silver Paste for Attaching Semiconductor Devices
  Attachment of semiconductor devices to a package substrate is essential for providing electrical and structural connections as well as a heat dissipation path. The die-attach materials play a vital role in ensuring the system performance and reliability. As th…
  openalex John G. Bai, Z. Zhang, Jesus N. Calata, G-q. Lu 2005-06-01 置信度 0.72 Materials scienceSubstrate (aquarium)Die (integrated circuit)ResistorSilver Nano
• Wide Band Gap Semiconductor Devices for Power Electronic Converters
  Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology. However, Si is reaching its …
  openalex S M Sajjad Hossain Rafin, Roni Ahmed, Osama A. Mohammed 2023-02-01 置信度 0.72 Silicon carbideWide-bandgap semiconductorPower semiconductor deviceGallium nitrideMaterials science
• Semiconductor Devices
  openalex 1958-10-01 置信度 0.72 SemiconductorMaterials scienceOptoelectronicsEngineering physicsPhysics
• Thermal characterizations of Cu nanoparticle joints for power semiconductor devices
  openalex Toshitaka Ishizaki, Toshikazu Satoh, A. Kuno, A. Tane 等 2013-09-01 置信度 0.72 SemiconductorNanoparticleMaterials scienceThermalPower (physics)
• Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
  openalex Jialin Yang, Kewei Liu, Xing Chen, Dezhen Shen 2022-05-01 置信度 0.72 OptoelectronicsMicroelectronicsMaterials scienceSemiconductorWide-bandgap semiconductor
• Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device
  Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd∕Si metal–oxide–semiconductor structure. The SiO2:Gd active layer is prepared by thermal oxidation followed by Gd+ implantation and …
  openalex Jiaming Sun, W. Skorupa, T. Dekorsy, M. Helm 等 2004-10-18 置信度 0.72 ElectroluminescenceMaterials scienceOptoelectronicsUltravioletOxide
• Spin-valve effects in a semiconductor field-effect transistor: A spintronic device
  We present a spintronic semiconductor field-effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to ea…
  openalex S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield 等 1999-09-15 置信度 0.72 SpintronicsPermalloyAntiparallel (mathematics)Condensed matter physicsSpin valve
• High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices
  openalex Woo Sik Jeon, Jung Soo Park, Ling Li, Dae Chul Lim 等 2012-03-03 置信度 0.72 OptoelectronicsThermal conductionElectron mobilityOrganic semiconductorSpace charge
• Noise in Semiconductor Devices
  Noise is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. Thermal noise is created by random motion of charge carriers due to thermal excitation. This noise…
  openalex Alicja Konczakowska, Bogdan M. Wilamowski 2018-10-03 置信度 0.72 Noise (video)Computer scienceSemiconductorAcousticsElectrical engineering
• An improved asymmetrical multilevel inverter topology with reduced semiconductor device count
  Background Multilevel Inverters have become a viable alternative to two-level inverters because of their superior power quality, however, the increase in number of switches with their corresponding voltage stress, and dc voltage sources are the major factors f…
  openalex Zeeshan Sarwer, Marif Daula Siddique, Atif Iqbal, Adil Sarwar 等 2020-09-07 置信度 0.72 Topology (electrical circuits)Total harmonic distortionMATLABVoltageInverter
• Understanding FACTS: Concepts and Technology of Flexible AC Transmission Systems
  "The Flexible AC Transmission System (FACTS) -- a new technology based on power electronics -- offers an opportunity to enhance controllability, stability, and power transfer capability of AC transmission systems. Pioneers in FACTS and leading world experts in…
  openalex N.G. Hingorani, Laszlo Gyugyi 1999-12-24 置信度 0.72 Transmission (telecommunications)Computer scienceTelecommunications
• Semiconductor Devices
  openalex Narciso Garcı́a, Arthur Damask, Steven Schwarz 1998-01-01 置信度 0.72 SemiconductorSiliconDopingMaterials scienceImpurity
• Electron bombarded semiconductor devices
  The first electron bombarded semiconductor (EBS) devices have recently appeared on the market. These devices have already demonstrated that EBS has considerable promise as an important new electron device for power amplification and control. EBS devices are de…
  openalex A. Silzars, D.J. Bates, A. Ballonoff 1974-01-01 置信度 0.72 Semiconductor deviceReliability (semiconductor)Power semiconductor deviceSemiconductorPower (physics)
• Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
  openalex Markus Kantner, Thomas Koprucki 2016-11-23 置信度 0.72 SemiconductorComputer simulationDiodeNonlinear systemDiffusion
• Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
  Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequen…
  openalex Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng 等 2023-11-08 置信度 0.72 Materials scienceOptoelectronicsGallium nitrideThermal resistanceTransistor
• Finite difference method and analysis for three-dimensional semiconductor device of heat conduction
  The mathematical model of the three-dimensional semiconductor devices of heat conduction is described by a system of four quasilinear partial differential equations for initial boundary value problem. One equation in elliptic form is for the electric potential…
  openalex Yirang Yuan 1996-01-01 置信度 0.72 Thermal conductionMathematicsBoundary value problemMathematical analysisPartial differential equation
• Industrial application of atom probe tomography to semiconductor devices
  openalex A. Devin Giddings, Sebastian Koelling, Yasuo Shimizu, Robert Estivill 等 2017-11-15 置信度 0.72 Semiconductor industryAtom probeSemiconductorMetrologyMaterials science
• On the nature of ballistic transport in short-channel semiconductor devices
  Criteria for true ballistic transport as opposed to space-charge limited transport are discussed with particular emphasis on device characteristics.
  openalex John R. Barker, D. K. Ferry, H. L. Grubin 1980-10-01 置信度 0.72 Ballistic conductionSpace chargeSemiconductor deviceSemiconductorChannel (broadcasting)
• wo-dimensional finite element simulation of semiconductor devices
  Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.
  openalex J.J. Barnes, R.J. Lomax 1974-08-08 置信度 0.72 Finite element methodSemiconductor deviceSemiconductorMaterials scienceElectronic engineering
• Theory of ion beam induced charge measurement in semiconductor devices based on the Gunn's theorem
  openalex E. Vittone 2004-02-21 置信度 0.72 SemiconductorSpace chargeSchottky diodeDiodeDepletion region
• Fabrication of vapor-deposited micro heat pipe arrays as an integral part of semiconductor devices
  Vapor-deposited micro heat pipe arrays (VDMHP) were fabricated as an integral part of semiconductor devices to act as efficient heat spreaders by reducing the thermal path between the heat sources and heat sink. Fabrication of the VDMHP was accomplished by fir…
  openalex A. K. Mallik, G. P. Peterson, M.H. Weichold 1995-01-01 置信度 0.72 FabricationSemiconductorMaterials scienceHeat pipeOptoelectronics
• Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
  openalex Yuan Liu, Jian Guo, Enbo Zhu, Lei Liao 等 2018-05-01 置信度 0.72 Schottky barrierSemiconductorWork functionMaterials sciencevan der Waals force
• Magnetoresistance and Spin Transport in Organic Semiconductor Devices
  The study of electron-spin transport through nonmagnetic spacer materials sandwiched in between ferromagnetic electrodes is an extremely active eld, because of the rich physics involved and the important applications in the area of magnetic sensors.1 If the sp…
  openalex M. Wohlgenannt, P. A. Bobbert, B. Koopmans, F. Bloom 2010-04-09 置信度 0.72 MagnetoresistanceOrganic semiconductorCondensed matter physicsSemiconductorMaterials science
• Organic Semiconductors and their Applications in Photovoltaic Devices
  In recent years, organic semiconductors have emerged as a promising and, in some situations, viable commercial alternative to traditional inorganic materials such as silicon. Organic-based light emitting diodes, photovoltaic devices, photodetectors, and transi…
  openalex Jason D. Myers, Jiangeng Xue 2012-01-01 置信度 0.72 Materials sciencePhotovoltaic systemOrganic semiconductorSemiconductorNanotechnology
• Semiconductor devices for all-optical signal processing
  All-optical signal processing has been made practical by the use of semiconductor optical amplifier (SOA) devices to realise integrated all-optical switching gates. Recent advances in SOA based devices and their performance is described. (4 pages)
  openalex A. Poustie 2005-01-01 置信度 0.72 Optical amplifierOptical transistorSignal processingOptical switchComputer science
• Fast thermal profiling of power semiconductor devices using Fourier techniques
  Accurate prediction of temperature variation of power semiconductor devices in power electronic circuits is important to obtain optimum designs and estimate reliability levels. Temperature estimation of power electronic devices has generally been performed usi…
  openalex Jody J. Nelson, Giri Venkataramanan, Ayman El‐Refaie 2006-04-01 置信度 0.72 SpiceSemiconductor deviceElectronic engineeringElectronic circuitComputer science
• Handbook of Nitride Semiconductors and Devices
  openalex H. Morkoç̌ 2008-10-22 置信度 0.72 SemiconductorMaterials scienceNitrideOptoelectronicsEngineering physics
• 11. Semiconductor devices
  openalex 2014-06-12 置信度 0.72 SemiconductorMaterials scienceOptoelectronics
• Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
  Improvement in electrical properties of thermally grown GeO2/Ge metal-oxide-semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (VFB) shift, small hysteresis, and minimized minority carrier response in capacitance-voltage (C-V) chara…
  openalex Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito 等 2009-05-18 置信度 0.72 Materials scienceAnnealing (glass)CapacitorCapacitanceOptoelectronics
• High electric field approximation to charge transport in semiconductor devices
  openalex P. Dmitruk, Andrés Saúl, Luis G. Reyna 1992-05-01 置信度 0.72 Boltzmann equationElectric fieldScatteringSemiconductorElectron
• Dielectric Materials in Semiconductor Devices
  Dielectric films are used extensively in semiconductor technology for masking against the diffusion of dopants into semiconductors, fabrication of active and passive components, electrical isolation between components, and surface passivation of devices. Silic…
  openalex T. L. Chu 1969-01-01 置信度 0.72 Materials scienceDielectricPassivationSiliconDopant
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
  With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portio…
  openalex Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks 等 2014-01-29 置信度 0.72 Materials scienceTransition metalNanotechnologyEngineering physicsOptoelectronics
• Quantum Transport in Semiconductor Nanostructures
  openalex C. W. J. Beenakker, H. van Houten 1991-01-01 置信度 0.72 Condensed matter physicsQuantum tunnellingBallistic conductionQuantum Hall effectQuantum point contact
• Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
  The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electric…
  openalex Takahiro Yamada, Joyo Ito, Ryohei Asahara, K. Watanabe 等 2017-06-26 置信度 0.72 Materials scienceOptoelectronicsCapacitorOxideSputtering
• Parasitic Inductance Effects on the Switching Loss Measurement of Power Semiconductor Devices
  This paper gives the detailed analysis of the parasitic inductance effects on the switching loss measurement of power semiconductor devices, especially IGBTs. Base on the circuit operation analysis and measurement of IGBT characteristics, it's shown that the l…
  openalex Yanqun Shen, Jian Jiang, Yan Xiong, Yan Deng 等 2006-07-01 置信度 0.72 Insulated-gate bipolar transistorInductanceParasitic elementElectrical engineeringParasitic extraction
• A finite element formulation for the hydrodynamic semiconductor device equations
  openalex N. R. Aluru, A. Raefsky, Peter M. Pinsky, Kincho H. Law 等 1993-08-01 置信度 0.72 Finite element methodNonlinear systemPoisson's equationGalerkin methodCompressibility
• Questionability of drift-diffusion transport in the analysis of small semiconductor devices
  openalex Peter Rohr, Fredrik A. Lindholm, Kenneth R. Allen 1974-07-01 置信度 0.72 Bipolar junction transistorDiffusionSemiconductor deviceBase (topology)Transit time
• Comparative Analysis of Semiconductor Device Architectures for 5-nm Node and Beyond
  This letter, for the first time, investigates interactive logic cell schemes and transistor architecture scaling options for 5-nm technology node (N5) and beyond. The proposed novel transistors, such as Hexagonal NanoWire (NW) and NanoRing (NR) architectures, …
  openalex Peijie Feng, Seung-Chul Song, Giri Nallapati, John Zhu 等 2017-11-02 置信度 0.72 NanoringNode (physics)Logic gateTransistorParasitic capacitance
• Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects
  The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, …
  openalex Simone Dolabella, Aurelio Borzì, Alex Dommann, A. Neels 2021-12-23 置信度 0.72 DiffractionMaterials scienceSemiconductorDislocationLattice (music)
• Electronic Properties of Doped Semiconductors
  openalex B. I. Shklovskiǐ, Alex L. Efros 1984-01-01 置信度 0.72 SemiconductorDopingEngineering physicsImpurityNanotechnology
• Room-temperature semiconductor device and array configurations
  openalex Michael R. Squillante, L. Cirignano, R. Grazioso 2001-02-01 置信度 0.72 Cadmium telluride photovoltaicsSemiconductorDetectorSemiconductor deviceVariety (cybernetics)
• Multiprobe Measurement Method for Voltage-Dependent Capacitances of Power Semiconductor Devices in High Voltage
  The characterization of voltage-dependent capacitances of power semiconductor devices [diode, MOSFET, insulated gate bipolar transistor (IGBT), etc.] is very important for modeling their dynamic performances. A measurement method using two current probes has b…
  openalex Ke Li, Arnaud Videt, Nadir Idir 2013-01-14 置信度 0.72 Power (physics)Electrical engineeringComputer scienceTopology (electrical circuits)Physics
• CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices
  New interconnect materials that have a low line resistivity are required to address issues associated with the increased resistivity due to the aggressive downscaling of future semiconductor devices. In this work, CuAl2 thin films are investigated as a potenti…
  openalex Linghan Chen, Daisuke Ando, Yuji Sutou, Junichi Koike 2019-05-01 置信度 0.72 Electrical resistivity and conductivityMaterials scienceInterconnectionSemiconductorBlanket
• An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices
  We present an approach to the simulation of ultrasmall semiconductor devices based on Brownian motion of the carriers described by the Langevin equation. It follows the trajectories of individual particles in real space but does not require the computational e…
  openalex Clinton R. Arokianathan, Asen Asenov, J. H. Davies 1996-07-01 置信度 0.72 Brownian motionMonte Carlo methodStatistical physicsBrownian dynamicsSemiconductor device
• Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry
  In the backside interferometric thermal mapping technique, an infrared (IR) laser beam probes the temperature-induced changes in the semiconductor refractive index inside a semiconductor device, which results in a change in the measured optical phase shift. In…
  openalex D. Pogány, S. Bychikhin, C. Fürböck, Martin Litzenberger 等 2002-11-01 置信度 0.72 MicrosecondSemiconductorMaterials scienceDiodeSemiconductor laser theory
• Negative refraction in semiconductor metamaterials
  openalex Anthony J. Hoffman, Leonid Alekseyev, Scott S. Howard, Kale J. Franz 等 2007-10-14 置信度 0.72 MetamaterialNegative refractionPermittivitySuperlensTransformation optics
• Prospective of Semiconductor Memory Devices: from Memory System to Materials
  The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining. The conventional strategy for meeting such demand, i.e. shrinking of the memory cell size, will no longer be useful at some point in the future, owing to economic reasons…
  openalex Cheol Seong Hwang 2015-05-15 置信度 0.72 Neuromorphic engineeringVon Neumann architectureComputer sciencePoint (geometry)Semiconductor memory
• Reactions between Perfect Dislocations in Semiconductor Devices
  Abstract Semiconductor devices of “thyristor structure” are studied by the X‐ray topographic method. Typical perfect dislocations are generated in n‐p junction and glide in neighbouring {111} slip planes close to the crystal surface, thus contributing to the r…
  openalex M. Sauvage, David S. Simon 1969-01-01 置信度 0.72 SemiconductorMaterials scienceDislocationCondensed matter physicsSilicon
• Hot-carrier light emission from silicon metal-oxide-semiconductor devices
  Light emitted from energetic electrons and holes near the drain region of Si field-effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75…
  openalex Markus Herzog, F. Koch 1988-12-26 置信度 0.72 OptoelectronicsSiliconMaterials scienceImpact ionizationElectron
• RF and microwave semiconductor device handbook
  openalex 2003-05-01 置信度 0.72 MicrowaveSemiconductorOptoelectronicsMaterials scienceEngineering physics
• Transient thermal study of semiconductor devices
  An analytical, three-dimensional transient temperature solution of a two-layer semi-infinite plate structure with embedded hear sources is derived. The thickness of the second layer is assumed to extend to infinity. By incorporating the method of images, this …
  openalex Yong Min, Arthur Palisoc, C.C. Lee 1990-01-01 置信度 0.72 Transient (computer programming)Layer (electronics)ThermalSemiconductorSoftware
• Reliability issues in III–V compound semiconductor devices: optical devices and GaAs-based HBTs
  openalex Osamu Ueda 1999-12-01 置信度 0.72 Materials scienceOptoelectronicsHeterojunctionSemiconductorDislocation
• Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices
  Thin amorphous films were deposited by oxygen‐assisted pyrolysis of tantalum dichloro‐diethoxy‐acetylacetonate. Index of refraction and the optical gap measurements of the films were in agreement with previous results. The d‐c conduction mechanism appears to b…
  openalex E. Kaplan, Mária Balog, D. Frohman‐Bentchkowsky 1976-10-01 置信度 0.72 Tantalum pentoxideMaterials scienceTantalumChemical vapor depositionDielectric
• Determination of urea with an ammonia gas-sensitive semiconductor device in combination with urease
  openalex Fredrik Winquist, Anita Lloyd Spetz, I. Lundström, Bengt Danielsson 1984-01-01 置信度 0.72 ChemistryUreaseUreaChromatographyAmmonia
• Semiconductors for organic transistors
  Organic molecules/polymers with a π-conjugated (hetero)aromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. Howev…
  openalex Antonio Facchetti 2007-02-17 置信度 0.72 Organic field-effect transistorOrganic semiconductorTransistorMaterials scienceSemiconductor
• An introduction to the physics of semiconductor devices
  Chapter 1 Overview Chapter 2 Material properties and basic P-N junction relations Chapter 3 P-N Junction diodes Chapter 4 Bipolar Junction Transistors Chapter 5 MOS Field Effect Transistors Chapter 6 Junction Field Effect Transistors Chapter 7 Overview of spec…
  openalex 1999-07-01 置信度 0.72 SemiconductorEngineering physicsPhysicsOptoelectronics
• A straightforward analytical method for extraction of semiconductor device transient thermal parameters
  openalex F.N. Masana 2006-11-16 置信度 0.72 Transient (computer programming)ThermalSemiconductor deviceSemiconductorTime domain
• Materials for semiconductor devices that can bend, fold, twist, and stretch
  openalex John A. Rogers 2014-06-01 置信度 0.72 Fold (higher-order function)TwistSemiconductorMaterials scienceEngineering physics
• Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application
  Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs. The existing reliability predictions for the power electronics converter …
  openalex Ke Ma, Ui‐Min Choi, Frede Blaabjerg 2018-01-26 置信度 0.72 Reliability (semiconductor)Power (physics)Reliability engineeringEngineeringPower electronics
• Temperature adaptive driving of power semiconductor devices
  This work is about the development of a temperature-dependent driving strategy for power transistors, aimed at counterbalancing temperature related increases in their on-state resistance and power losses by a corresponding increase of the amplitude of the appl…
  openalex Wu Liang, Alberto Castellazzi 2010-07-01 置信度 0.72 Reliability (semiconductor)Power semiconductor deviceSemiconductor devicePower (physics)Transistor
• Improvement of zone control induction heating equipment for high-speed processing of semiconductor devices
  In order to process a semiconductor device of high quality, uniform heating is necessary, but it is not easy to heat uniformly with conventional induction heating equipment. To solve this problem, zone control induction heating equipment has been jointly devel…
  openalex Daisuke Miyagi, A. V. S. S. R. Sai, N. Takahashi, Naoki Uchida 等 2006-01-25 置信度 0.72 Induction heatingInduction coilElectromagnetic coilHeating elementSemiconductor
• Diamond tips and cantilevers for the characterization of semiconductor devices
  openalex A. Malavé, E. Oesterschulze, W. Kulisch, Thomas Trenkler 等 1999-03-01 置信度 0.72 DiamondMaterials scienceScanning probe microscopyCantileverSilicon
• Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
  We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off curre…
  openalex Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya 等 2003-05-22 置信度 0.72 Materials scienceOptoelectronicsFabricationThin-film transistorSemiconductor
• Power electronics: circuits, devices, and applications
  1. Introduction. 2. Power Semiconductor Diodes and Circuits. 3. Diode Rectifiers. 4. Power Transistors. 5. DC-DC Converters. 6. Pulse-width Modulated Inverters. 7. Thyristors. 8. Resonant Pulse Inverters. 9. Multilevel Inverters. 10. Controlled Rectifiers. 11.…
  openalex 1989-02-01 置信度 0.72 ThyristorElectronic circuitElectrical engineeringCommutationPower semiconductor device
• Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling
  openalex D. K. Ferry, A.M. Kriman, Meng Jeng Kann, Ravindra P. Joshi 1991-08-01 置信度 0.72 Monte Carlo methodScatteringStatistical physicsMonte Carlo molecular modelingPhysics
• Control of Schottky Barrier Heights on High- K Gate Dielectrics for Future Complementary Metal-Oxide Semiconductor Devices
  The calculated Schottky barrier heights of polar and nonpolar interfaces of many metals on HfO2 high dielectric constant gate oxide have been found to vary strongly with the metal work function and also with oxide termination, with relatively little Fermi leve…
  openalex K. Tse, John Robertson 2007-08-24 置信度 0.72 OxideDielectricSchottky diodeSchottky barrierMaterials science
• An Industry-Based Survey of Reliability in Power Electronic Converters
  A questionnaire survey was carried out to determine the industrial requirements and expectations of reliability in power electronic converters. The survey was subjective and conducted with a number of high-profile semiconductor manufacturers, integrators, and …
  openalex Shaoyong Yang, A.T. Bryant, Philip Mawby, Dawei Xiang 等 2011-03-15 置信度 0.72 Reliability (semiconductor)ConvertersAerospaceReliability engineeringPower (physics)
• Numerical modeling of magnetic-field-sensitive semiconductor devices
  Semiconductor devices in the presence of a magnetic field have been modeled numerically. The two-dimensional distributions of the electric potential, the electron concentration, and the hole concentration in a silicon slab exposed to a magnetic field have been…
  openalex L. Andor, H. Baltes, Arokia Nathan, H. G. Schmidt-Weinmar 1985-07-01 置信度 0.72 Magnetic fieldSiliconDiodeSemiconductorSemiconductor device
• Semiconductor device simulation at NTT
  The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In t…
  openalex K. Yokoyama, M. Tomizawa, A. Yoshii, T. Sudo 1985-10-01 置信度 0.72 Semiconductor deviceKey (lock)Monte Carlo methodSemiconductorComputer science
• Semiconductor Devices in Solid-State/Hybrid Circuit Breakers: Current Status and Future Trends
  Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well a…
  openalex Chunyang Gu, Patrick Wheeler, Alberto Castellazzi, Alan J. Watson 等 2017-04-06 置信度 0.72 Circuit breakerElectrical engineeringSemiconductor devicePower (physics)Power semiconductor device
• Electromagnetic interfacing of semiconductor devices and circuits
  This paper discusses the interactions between semiconductor devices and electromagnetic waves and the possible ways to interface modern devices and circuits in the mm-wave range. This topic is very important for advancing current MMIC designs and for developin…
  openalex Samir El‐Ghazaly, T. Itoh 2002-11-22 置信度 0.72 InterfacingSemiconductor deviceFinite-difference time-domain methodMonolithic microwave integrated circuitElectronic circuit
• Finite Difference Methods for the Transient Behavior of a Semiconductor Device
  openalex Jim Douglas, Ye Yuan 1987-01-01 置信度 0.72 Transient (computer programming)Semiconductor deviceFinite difference methodTransient analysisComputer science
• 2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods
  openalex José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi‐Wang Shu 2005-10-28 置信度 0.72 Monte Carlo methodBoltzmann equationSolverDirect simulation Monte CarloStatistical physics
• 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  openalex 2019-05-01 置信度 0.72 Electrical engineeringPower (physics)Computer scienceEngineering physicsEngineering
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