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• Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices
  Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered struc…
  openalex Tatsuo Suzuki 2015-11-23 置信度 0.80 MonolayerGroup (periodic table)SemiconductorCrystallographyAtom (system on chip)
• Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations
  openalex Fabrizio Bonani, Giovanni Ghione 1999-02-01 置信度 0.67 Noise (video)PhysicsComputational physicsSemiconductorStatistical physics
• Electronics using hybrid-molecular and mono-molecular devices
  openalex Christian Joachim, James K. Gimzewski, Ari Aviram 2000-11-01 置信度 0.64 RectificationElectronicsMolecular electronicsMicroelectronicsMiniaturization
• Cosmic ray induced failures in high power semiconductor devices
  openalex H. R. Zeller 1997-10-01 置信度 0.67 Insulated-gate bipolar transistorFailure rateThyristorDramDiode
• A comprehensive transport model for semiconductor device simulation
  In this paper a comprehensive carrier dynamical transport model for semiconductor device simulation is presented. The model consists of carrier, carrier momentum and carrier energy conservation relations derived using a perturbation solution for the carrier di…
  openalex Colin C. McAndrew, E.L. Heasell, K. Singhal 1987-10-01 置信度 0.78 SemiconductorDegenerate energy levelsDegeneracy (biology)Distribution functionPhysics
• Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
  We investigate the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher-k ALD-TiO2 gate dielectric. An ALD-Al2O3 IL of ∼1 nm thickness reduces the gate l…
  openalex Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima, Paul C. McIntyre 2010-02-22 置信度 0.78 Materials scienceAtomic layer depositionCapacitorPassivationCapacitance
• Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices
  We investigate a new type of magnetoresistance (MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagnetic grating defined on the surface of the device. We observe an increase in …
  openalex N. Overend, Alain Nogaret, B. L. Gallagher, P. C. Main 等 1998-04-06 置信度 0.78 MagnetoresistanceCondensed matter physicsFerromagnetismMaterials scienceElectrical resistivity and conductivity
• Bias temperature instability in SiC metal oxide semiconductor devices
  Abstract Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC MOSFET and V fb in MOS capacitor after the device is operated a…
  openalex Chao Yang, Shengsheng Wei, Dejun Wang 2020-11-24 置信度 0.82 InstabilityMaterials scienceSemiconductorOxideMetal
• A Bifurcation Analysis of the One-Dimensional Steady-State Semiconductor Device Equations
  This paper considers the one-dimensional steady-state semiconductor device equations modeling a thyristor. These equations can be considered as a singularly perturbed boundary value problem. The reduced problem is considered in order to derive an approximation…
  openalex Herbert Steinrück 1989-08-01 置信度 0.78 BifurcationSteady state (chemistry)MathematicsCurrent (fluid)Mathematical analysis
• The potential of III‐V semiconductors as terrestrial photovoltaic devices
  Abstract III‐V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal cand…
  openalex Matteo Bosi, C. Pelosi 2006-06-19 置信度 0.78 Photovoltaic systemOptoelectronicsEngineering physicsSemiconductorSolar cell
• A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors
  A surface passivation method for , with possible extensions to and , is proposed. For , a correlation between recent device work (on solar cells, field effect transistors, MOS devices, and photodiodes) and the experimental Ga‐As‐O phase diagram provides strong…
  openalex F. Capasso, Graeme Williams 1982-04-01 置信度 0.78 PassivationOptoelectronicsMaterials sciencePhotodiodePhotodetector
• Deposition techniques for dielectric films on semiconductor devices
  Techniques for forming dielectric layers for fabricating semiconductor components are reviewed, including (1) low-pressure techniques: evaporation, sputtering, plasma deposition, and low-pressure CVD, (2) techniques operating at one atmosphere total pressure: …
  openalex J. A. Amick, G.L. Schnable, John L. Vossen 1977-09-01 置信度 0.78 Materials scienceSemiconductorSiliconChemical vapor depositionSputtering
• Recent developments in compact ultrafast lasers
  openalex U. Keller 2003-08-01 置信度 0.60 Ultrashort pulseLaserFemtosecondPicosecondOptoelectronics
• GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation
  Oxides induced Fermi level pinning at the interface between the GaAs and high-k gate dielectric is a major obstacle for developing high performance GaAs metal-oxide-semiconductor (MOS) devices. In this letter, thermal nitridation treatment on GaAs surface prio…
  openalex Fei Gao, S. J. Lee, D. Z., S. Balakumar 等 2007-06-18 置信度 0.78 Materials sciencePassivationOptoelectronicsDielectricMetal gate
• Thermal transient characterization of semiconductor devices with multiple heat sources—Fundamentals for a new thermal standard
  openalex Dirk Schweitzer, Ferenc Ender, Gusztáv Hantos, Péter G. Szabó 2014-12-20 置信度 0.69 Thermal resistanceTransient (computer programming)ThermalSemiconductorCharacterization (materials science)
• Semiconductor sheets for the manufacture of semiconductor devices
  The temperature distribution in a supercooled melt is qualitatively described. Properly shaped heat shields are shown to overcome parasitic wall growth and thermal shock, besides being an additional means of controlling thermal conditions. Using such a setup, …
  openalex S. N. Dermatis, J. W. Faust 1963-03-01 置信度 0.78 Materials scienceSemiconductorThermal shockDislocationThermal
• Metal electrode effects on spin-orbital coupling and magnetoresistance in organic semiconductor devices
  This letter reports the modifications of spin-orbital coupling and magnetoresistance of conjugated polymer upon deposition of metal electrode based on organic light-emitting diodes of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]. We find that the…
  openalex Yue Wu, Bin Hu 2006-11-13 置信度 0.78 MagnetoresistanceElectroluminescenceMaterials scienceOrganic semiconductorElectrode
• Integrated Optoelectronic Devices Based on Conjugated Polymers
  An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance a…
  openalex Henning Sirringhaus, Nir Tessler, Richard H. Friend 1998-06-12 置信度 0.78 Materials scienceOptoelectronicsPolymerPolaronTransistor
• A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation
  The paper presents a novel, unified technique to evaluate, through physics-based modeling, the frequency conversion and noise behavior of semiconductor devices operating in the large-signal periodic regime. Starting from the harmonic balance (HE) solution of t…
  openalex Fabrizio Bonani, Simona Donati Guerrieri, Giovanni Ghione, Marco Pirola 2001-05-01 置信度 0.78 Noise (video)Harmonic balanceSIGNAL (programming language)DiscretizationElectronic engineering
• Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication
  openalex Dae Sik Kim, Jae Bin Kim, Da Won Ahn, Jin Hyun Choe 等 2023-03-11 置信度 0.71 Materials scienceAtomic layer depositionSemiconductorEtching (microfabrication)Nanotechnology
• Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures
  openalex A. C. Twitchett-Harrison, Timothy Yates, Rafal E. Dunin‐Borkowski, Paul A. Midgley 2008-06-26 置信度 0.67 Electron holographyMaterials scienceHolographySemiconductorTilt (camera)
• Mesoscopic coherence phenomena in semiconductor devices
  Semiconductor devices have several attractive properties which make them useful in the study of electronic coherence phenomena such as universal conductance fluctuations. The use of gated devices allows the Fermi level, and thus the electronic wavelength, to b…
  openalex Steven B. Kaplan, A. Hartstein 1988-05-01 置信度 0.78 Mesoscopic physicsConductanceCondensed matter physicsCoherence (philosophical gambling strategy)Physics
• Semiconductor Devices
  openalex 2000-08-23 置信度 0.67 Materials scienceSemiconductorOptoelectronics
• Synthesis and device characterisation of side-chain polymer electron transport materials for organic semiconductor applications
  Improved syntheses and polymerisations are reported of monomers bearing electron transporting substituents based on 2,5-diphenyloxadiazole and 2,3-diphenylquinoxaline attached directly to a vinyl group. By copolymerisation and by use of mixtures of homopolymer…
  openalex S. Dailey, W. J. Feast, R.J. Peace, I. Sage 等 2001-01-01 置信度 0.78 TriphenylamineMaterials sciencePolymerQuinoxalineMonomer
• Iterative methods in semiconductor device simulation
  openalex Randolph E. Bank, W.M. Coughran, Michael A. Driscoll, Randall K. Smith 等 1989-05-01 置信度 0.67 DiscretizationKrylov subspaceComputer scienceBlock (permutation group theory)Graph
• Cooling Systems of Power Semiconductor Devices—A Review
  In this paper, a detailed review of contemporary cooling systems of semiconductor devices is presented. The construction and the principles of operation of selected components of passive and active cooling systems, as well as selected computer tools supporting…
  openalex Krzysztof Górecki, Krzysztof Posobkiewicz 2022-06-22 置信度 0.82 Water coolingPower semiconductor deviceThermal resistanceSemiconductor deviceMOSFET
• Hybrid ferromagnet–semiconductor devices
  Novel magnetoelectronic devices for application as nonvolatile memory cells, logic gates, or magnetic field sensors are based on a bilayer structure comprised of a high mobility semiconducting Hall cross and a single, electrically isolated, microstructured fer…
  openalex Mark Johnson 1998-05-01 置信度 0.78 Materials scienceOptoelectronicsFerromagnetismMagnetic force microscopeSemiconductor
• A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices
  The authors present a computationally efficient unified approach to the numerical simulation of sensitivity and noise in majority-carrier semiconductor devices that is based on the extension to device simulation of the adjoint method for sensitivity and noise …
  openalex Giovanni Ghione, F. Filicori 1993-03-01 置信度 0.78 Sensitivity (control systems)Noise (video)DiscretizationComputer scienceFunction (biology)
• Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
  This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators an…
  openalex T. D. Moustakas, Roberto Paiella 2017-06-26 置信度 0.80 OptoelectronicsLight-emitting diodeTerahertz radiationHeterojunctionDiode
• Power semiconductor devices
  openalex B.K. Bose 2020-12-16 置信度 0.71 Power (physics)SemiconductorElectrical engineeringMaterials scienceOptoelectronics
• Pulsed anodic oxides for III-V semiconductor device fabrication
  A simple procedure for the rapid formation of uniform native oxides on various III-V semiconductor materials is described. A pulsed applied potential drives an anodic oxide formation process on the semiconductor immersed in a glycol:water:acid solution. Unifor…
  openalex Michael Grove, David Hudson, P.S. Zory, R. J. Dalby 等 1994-07-01 置信度 0.78 Materials scienceSemiconductorDiodeAnodeOptoelectronics
• Modeling of electron-hole scattering in semiconductor devices
  It is generally assumed in device modeling that the effects of electron-hole scattering can be fully accounted for by a suitable reduction in the electron and hole mobilities with injection level, without modifying the semiconductor device equations themselves…
  openalex D.E. Kane, R.M. Swanson 1993-01-01 置信度 0.78 Ambipolar diffusionElectron mobilityElectronScatteringDiffusion
• Van der Waals heterostructures and devices
  openalex Yuan Liu, Nathan O. Weiss, Xidong Duan, Xidong Duan 等 2016-07-12 置信度 0.66 van der Waals forceHeterojunctionMaterials scienceDangling bondElectronics
• Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits
  openalex Denis Flandre 1995-01-01 置信度 0.67 Silicon on insulatorElectronic circuitCMOSMaterials scienceSemiconductor
• The history of chemically sensitive semiconductor devices
  openalex P. Bergveld, Ν. F. de Rooij 1981-01-01 置信度 0.67 Chemical sensorChemical stateBiological systemChemical speciesSIGNAL (programming language)
• Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric
  A surface passivation method to improve the film quality of HfO2 gate dielectric on Ge substrate by using ultrathin AlNx layer is reported. Results show that the AlNx passivation layer is more effective in suppressing the GeOx formation at the HfO2∕Ge interfac…
  openalex Fei Gao, S. J. Lee, Jisheng Pan, Lei Tang 等 2005-03-04 置信度 0.78 PassivationMaterials scienceOptoelectronicsDielectricLayer (electronics)
• DEVSIM: A TCAD Semiconductor Device Simulator
  DEVSIM is technology computer-aided design (TCAD) software for semiconductor device simulation. By solving the equations for electric fields and current flow, it simulates the electrical behavior of semiconductor devices, such as transistors. It can be used to…
  openalex Juan Sánchez 2022-02-15 置信度 0.82 Semiconductor deviceSimulationComputer scienceSemiconductorMaterials science
• Electrostatic Discharge Failures of Semiconductor Devices
  ESD (Electrostatic Discharge) is a significant cause of device failures at all stages of device and equipment production, assembly, test, installation and field use. Even though device designs include protection circuitry, it is relatively easy to generate sta…
  openalex B. A. Unger 1981-04-01 置信度 0.78 Electrostatic dischargeCharge (physics)Semiconductor deviceCapacitorElectrical engineering
• Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells
  Device modeling of CH3NH3PbI3−xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefor…
  openalex Takashi Minemoto, Masashi Murata 2014-08-04 置信度 0.80 Perovskite (structure)Materials scienceSolar cellOptoelectronicsSemiconductor
• Conditioning of the Steady State Semiconductor Device Problem
  When solving numerically the steady state semiconductor device problem using appropriate discretizations, extremely large condition numbers are often encountered for the linearized discrete device problem. These condition numbers are so large that, if they rep…
  openalex Uri M. Ascher, Peter A. Markowich, Christian Schmeiser, Herbert Steinrück 等 1989-02-01 置信度 0.78 ScalingMathematicsSteady state (chemistry)ConditioningStability (learning theory)
• Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT
  The photovoltaic and photocatalytic systems generally use at least one semiconductor in their architecture which role is to absorb the light or to transport the charge carriers. Despite the large variety of working principles encountered in these systems, they…
  openalex Tangui Le Bahers, Michel Rérat, Philippe Sautet 2014-02-28 置信度 0.80 SemiconductorBand gapCharge carrierMaterials scienceDensity functional theory
• Recent Trends in Novel Semiconductor Devices
  openalex Archana Pandey 2022-01-28 置信度 0.71 Materials scienceSubthreshold conductionTransistorSemiconductorSemiconductor device
• Active terahertz metamaterial devices
  openalex Hou‐Tong Chen, Willie J. Padilla, Joshua M. O. Zide, A. C. Gossard 等 2006-11-01 置信度 0.67 Terahertz radiationMetamaterialOptoelectronicsTerahertz gapDetector
• Device modeling and simulations toward sub-10 nm semiconductor devices
  This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated …
  openalex Nobuyuki Sano, Akira Hiroki, K. Matsuzawa 2002-03-01 置信度 0.78 Semiconductor deviceField-effect transistorSemiconductorMOSFETTransistor
• Small Molecule Organic Semiconductors on the Move: Promises for Future Solar Energy Technology
  This article is written from an organic chemist's point of view and provides an up-to-date review about organic solar cells based on small molecules or oligomers as absorbers and in detail deals with devices that incorporate planar-heterojunctions (PHJ) and bu…
  openalex Amaresh Mishra, Peter Bäuerle 2012-02-17 置信度 0.80 Organic solar cellCommercializationOrganic semiconductorNanotechnologyMaterials science
• The properties, physics, and design of semiconductor devices
  openalex John N. Shive 1959-01-01 置信度 0.63 SemiconductorEngineering physicsPhysicsNanotechnologyMaterials science
• Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension
  The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effe…
  openalex Philip Calado, Ilario Gelmetti, Benjamin Hilton, Mohammed Azzouzi 等 2022-05-25 置信度 0.82 SemiconductorMaterials scienceOptoelectronicsIonic bondingCharge carrier
• Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications
  In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal…
  openalex Hongfang Wang, Fred Wang, Junhong Zhang 2008-01-01 置信度 0.78 Figure of meritPower densityPower semiconductor devicePower (physics)Power module
• Characterization of Low-Temperature Sintered Nanoscale Silver Paste for Attaching Semiconductor Devices
  Attachment of semiconductor devices to a package substrate is essential for providing electrical and structural connections as well as a heat dissipation path. The die-attach materials play a vital role in ensuring the system performance and reliability. As th…
  openalex John G. Bai, Z. Zhang, Jesus N. Calata, G-q. Lu 2005-06-01 置信度 0.78 Materials scienceSubstrate (aquarium)Die (integrated circuit)ResistorSilver Nano
• Wide Band Gap Semiconductor Devices for Power Electronic Converters
  Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology. However, Si is reaching its …
  openalex S M Sajjad Hossain Rafin, Roni Ahmed, Osama A. Mohammed 2023-02-01 置信度 0.82 Silicon carbideWide-bandgap semiconductorPower semiconductor deviceGallium nitrideMaterials science
• Semiconductor Devices
  openalex 1958-10-01 置信度 0.67 SemiconductorMaterials scienceOptoelectronicsEngineering physicsPhysics
• Thermal characterizations of Cu nanoparticle joints for power semiconductor devices
  openalex Toshitaka Ishizaki, Toshikazu Satoh, A. Kuno, A. Tane 等 2013-09-01 置信度 0.69 SemiconductorNanoparticleMaterials scienceThermalPower (physics)
• Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
  openalex Jialin Yang, Kewei Liu, Xing Chen, Dezhen Shen 2022-05-01 置信度 0.71 OptoelectronicsMicroelectronicsMaterials scienceSemiconductorWide-bandgap semiconductor
• Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device
  Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd∕Si metal–oxide–semiconductor structure. The SiO2:Gd active layer is prepared by thermal oxidation followed by Gd+ implantation and …
  openalex Jiaming Sun, W. Skorupa, T. Dekorsy, M. Helm 等 2004-10-18 置信度 0.78 ElectroluminescenceMaterials scienceOptoelectronicsUltravioletOxide
• Spin-valve effects in a semiconductor field-effect transistor: A spintronic device
  We present a spintronic semiconductor field-effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to ea…
  openalex S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield 等 1999-09-15 置信度 0.78 SpintronicsPermalloyAntiparallel (mathematics)Condensed matter physicsSpin valve
• High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices
  openalex Woo Sik Jeon, Jung Soo Park, Ling Li, Dae Chul Lim 等 2012-03-03 置信度 0.69 OptoelectronicsThermal conductionElectron mobilityOrganic semiconductorSpace charge
• Noise in Semiconductor Devices
  Noise is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. Thermal noise is created by random motion of charge carriers due to thermal excitation. This noise…
  openalex Alicja Konczakowska, Bogdan M. Wilamowski 2018-10-03 置信度 0.80 Noise (video)Computer scienceSemiconductorAcousticsElectrical engineering
• An improved asymmetrical multilevel inverter topology with reduced semiconductor device count
  Background Multilevel Inverters have become a viable alternative to two-level inverters because of their superior power quality, however, the increase in number of switches with their corresponding voltage stress, and dc voltage sources are the major factors f…
  openalex Zeeshan Sarwer, Marif Daula Siddique, Atif Iqbal, Adil Sarwar 等 2020-09-07 置信度 0.82 Topology (electrical circuits)Total harmonic distortionMATLABVoltageInverter
• Understanding FACTS: Concepts and Technology of Flexible AC Transmission Systems
  "The Flexible AC Transmission System (FACTS) -- a new technology based on power electronics -- offers an opportunity to enhance controllability, stability, and power transfer capability of AC transmission systems. Pioneers in FACTS and leading world experts in…
  openalex N.G. Hingorani, Laszlo Gyugyi 1999-12-24 置信度 0.78 Transmission (telecommunications)Computer scienceTelecommunications
• Semiconductor Devices
  openalex Narciso Garcı́a, Arthur Damask, Steven Schwarz 1998-01-01 置信度 0.67 SemiconductorSiliconDopingMaterials scienceImpurity
• Electron bombarded semiconductor devices
  The first electron bombarded semiconductor (EBS) devices have recently appeared on the market. These devices have already demonstrated that EBS has considerable promise as an important new electron device for power amplification and control. EBS devices are de…
  openalex A. Silzars, D.J. Bates, A. Ballonoff 1974-01-01 置信度 0.78 Semiconductor deviceReliability (semiconductor)Power semiconductor deviceSemiconductorPower (physics)
• Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
  openalex Markus Kantner, Thomas Koprucki 2016-11-23 置信度 0.69 SemiconductorComputer simulationDiodeNonlinear systemDiffusion
• Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
  Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequen…
  openalex Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng 等 2023-11-08 置信度 0.82 Materials scienceOptoelectronicsGallium nitrideThermal resistanceTransistor
• Finite difference method and analysis for three-dimensional semiconductor device of heat conduction
  The mathematical model of the three-dimensional semiconductor devices of heat conduction is described by a system of four quasilinear partial differential equations for initial boundary value problem. One equation in elliptic form is for the electric potential…
  crossref Yirang Yuan 1996-01-01 置信度 0.72 Thermal conductionMathematicsBoundary value problemMathematical analysisPartial differential equation
• Industrial application of atom probe tomography to semiconductor devices
  openalex A. Devin Giddings, Sebastian Koelling, Yasuo Shimizu, Robert Estivill 等 2017-11-15 置信度 0.69 Semiconductor industryAtom probeSemiconductorMetrologyMaterials science
• On the nature of ballistic transport in short-channel semiconductor devices
  Criteria for true ballistic transport as opposed to space-charge limited transport are discussed with particular emphasis on device characteristics.
  openalex John R. Barker, D. K. Ferry, H. L. Grubin 1980-10-01 置信度 0.75 Ballistic conductionSpace chargeSemiconductor deviceSemiconductorChannel (broadcasting)
• wo-dimensional finite element simulation of semiconductor devices
  Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.
  openalex J.J. Barnes, R.J. Lomax 1974-08-08 置信度 0.75 Finite element methodSemiconductor deviceSemiconductorMaterials scienceElectronic engineering
• Theory of ion beam induced charge measurement in semiconductor devices based on the Gunn's theorem
  openalex E. Vittone 2004-02-21 置信度 0.67 SemiconductorSpace chargeSchottky diodeDiodeDepletion region
• Fabrication of vapor-deposited micro heat pipe arrays as an integral part of semiconductor devices
  Vapor-deposited micro heat pipe arrays (VDMHP) were fabricated as an integral part of semiconductor devices to act as efficient heat spreaders by reducing the thermal path between the heat sources and heat sink. Fabrication of the VDMHP was accomplished by fir…
  openalex A. K. Mallik, G. P. Peterson, M.H. Weichold 1995-01-01 置信度 0.78 FabricationSemiconductorMaterials scienceHeat pipeOptoelectronics
• Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
  openalex Yuan Liu, Jian Guo, Enbo Zhu, Lei Liao 等 2018-05-01 置信度 0.66 Schottky barrierSemiconductorWork functionMaterials sciencevan der Waals force
• Magnetoresistance and Spin Transport in Organic Semiconductor Devices
  The study of electron-spin transport through nonmagnetic spacer materials sandwiched in between ferromagnetic electrodes is an extremely active eld, because of the rich physics involved and the important applications in the area of magnetic sensors.1 If the sp…
  openalex M. Wohlgenannt, P. A. Bobbert, B. Koopmans, F. Bloom 2010-04-09 置信度 0.78 MagnetoresistanceOrganic semiconductorCondensed matter physicsSemiconductorMaterials science
• Organic Semiconductors and their Applications in Photovoltaic Devices
  In recent years, organic semiconductors have emerged as a promising and, in some situations, viable commercial alternative to traditional inorganic materials such as silicon. Organic-based light emitting diodes, photovoltaic devices, photodetectors, and transi…
  openalex Jason D. Myers, Jiangeng Xue 2012-01-01 置信度 0.80 Materials sciencePhotovoltaic systemOrganic semiconductorSemiconductorNanotechnology
• Semiconductor devices for all-optical signal processing
  All-optical signal processing has been made practical by the use of semiconductor optical amplifier (SOA) devices to realise integrated all-optical switching gates. Recent advances in SOA based devices and their performance is described. (4 pages)
  openalex A. Poustie 2005-01-01 置信度 0.75 Optical amplifierOptical transistorSignal processingOptical switchComputer science
• Fast thermal profiling of power semiconductor devices using Fourier techniques
  Accurate prediction of temperature variation of power semiconductor devices in power electronic circuits is important to obtain optimum designs and estimate reliability levels. Temperature estimation of power electronic devices has generally been performed usi…
  openalex Jody J. Nelson, Giri Venkataramanan, Ayman El‐Refaie 2006-04-01 置信度 0.78 SpiceSemiconductor deviceElectronic engineeringElectronic circuitComputer science
• Handbook of Nitride Semiconductors and Devices
  openalex H. Morkoç̌ 2008-10-22 置信度 0.67 SemiconductorMaterials scienceNitrideOptoelectronicsEngineering physics
• 11. Semiconductor devices
  openalex 2014-06-12 置信度 0.69 SemiconductorMaterials scienceOptoelectronics
• Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
  Improvement in electrical properties of thermally grown GeO2/Ge metal-oxide-semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (VFB) shift, small hysteresis, and minimized minority carrier response in capacitance-voltage (C-V) chara…
  openalex Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito 等 2009-05-18 置信度 0.78 Materials scienceAnnealing (glass)CapacitorCapacitanceOptoelectronics
• High electric field approximation to charge transport in semiconductor devices
  openalex P. Dmitruk, Andrés Saúl, Luis G. Reyna 1992-05-01 置信度 0.67 Boltzmann equationElectric fieldScatteringSemiconductorElectron
• Dielectric Materials in Semiconductor Devices
  Dielectric films are used extensively in semiconductor technology for masking against the diffusion of dopants into semiconductors, fabrication of active and passive components, electrical isolation between components, and surface passivation of devices. Silic…
  openalex T. L. Chu 1969-01-01 置信度 0.78 Materials scienceDielectricPassivationSiliconDopant
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
  With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portio…
  openalex Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks 等 2014-01-29 置信度 0.80 Materials scienceTransition metalNanotechnologyEngineering physicsOptoelectronics
• Quantum Transport in Semiconductor Nanostructures
  openalex C. W. J. Beenakker, H. van Houten 1991-01-01 置信度 0.64 Condensed matter physicsQuantum tunnellingBallistic conductionQuantum Hall effectQuantum point contact
• Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
  The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electric…
  openalex Takahiro Yamada, Joyo Ito, Ryohei Asahara, K. Watanabe 等 2017-06-26 置信度 0.80 Materials scienceOptoelectronicsCapacitorOxideSputtering
• Parasitic Inductance Effects on the Switching Loss Measurement of Power Semiconductor Devices
  This paper gives the detailed analysis of the parasitic inductance effects on the switching loss measurement of power semiconductor devices, especially IGBTs. Base on the circuit operation analysis and measurement of IGBT characteristics, it's shown that the l…
  openalex Yanqun Shen, Jian Jiang, Yan Xiong, Yan Deng 等 2006-07-01 置信度 0.78 Insulated-gate bipolar transistorInductanceParasitic elementElectrical engineeringParasitic extraction
• A finite element formulation for the hydrodynamic semiconductor device equations
  openalex N. R. Aluru, A. Raefsky, Peter M. Pinsky, Kincho H. Law 等 1993-08-01 置信度 0.67 Finite element methodNonlinear systemPoisson's equationGalerkin methodCompressibility
• Questionability of drift-diffusion transport in the analysis of small semiconductor devices
  openalex Peter Rohr, Fredrik A. Lindholm, Kenneth R. Allen 1974-07-01 置信度 0.67 Bipolar junction transistorDiffusionSemiconductor deviceBase (topology)Transit time
• Comparative Analysis of Semiconductor Device Architectures for 5-nm Node and Beyond
  This letter, for the first time, investigates interactive logic cell schemes and transistor architecture scaling options for 5-nm technology node (N5) and beyond. The proposed novel transistors, such as Hexagonal NanoWire (NW) and NanoRing (NR) architectures, …
  openalex Peijie Feng, Seung-Chul Song, Giri Nallapati, John Zhu 等 2017-11-02 置信度 0.80 NanoringNode (physics)Logic gateTransistorParasitic capacitance
• Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects
  The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, …
  openalex Simone Dolabella, Aurelio Borzì, Alex Dommann, A. Neels 2021-12-23 置信度 0.82 DiffractionMaterials scienceSemiconductorDislocationLattice (music)
• Electronic Properties of Doped Semiconductors
  openalex B. I. Shklovskiǐ, Alex L. Efros 1984-01-01 置信度 0.64 SemiconductorDopingEngineering physicsImpurityNanotechnology
• Room-temperature semiconductor device and array configurations
  openalex Michael R. Squillante, L. Cirignano, R. Grazioso 2001-02-01 置信度 0.67 Cadmium telluride photovoltaicsSemiconductorDetectorSemiconductor deviceVariety (cybernetics)
• Multiprobe Measurement Method for Voltage-Dependent Capacitances of Power Semiconductor Devices in High Voltage
  The characterization of voltage-dependent capacitances of power semiconductor devices [diode, MOSFET, insulated gate bipolar transistor (IGBT), etc.] is very important for modeling their dynamic performances. A measurement method using two current probes has b…
  openalex Ke Li, Arnaud Videt, Nadir Idir 2013-01-14 置信度 0.80 Power (physics)Electrical engineeringComputer scienceTopology (electrical circuits)Physics
• CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices
  New interconnect materials that have a low line resistivity are required to address issues associated with the increased resistivity due to the aggressive downscaling of future semiconductor devices. In this work, CuAl2 thin films are investigated as a potenti…
  openalex Linghan Chen, Daisuke Ando, Yuji Sutou, Junichi Koike 2019-05-01 置信度 0.82 Electrical resistivity and conductivityMaterials scienceInterconnectionSemiconductorBlanket
• An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices
  We present an approach to the simulation of ultrasmall semiconductor devices based on Brownian motion of the carriers described by the Langevin equation. It follows the trajectories of individual particles in real space but does not require the computational e…
  openalex Clinton R. Arokianathan, Asen Asenov, J. H. Davies 1996-07-01 置信度 0.78 Brownian motionMonte Carlo methodStatistical physicsBrownian dynamicsSemiconductor device
• Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry
  In the backside interferometric thermal mapping technique, an infrared (IR) laser beam probes the temperature-induced changes in the semiconductor refractive index inside a semiconductor device, which results in a change in the measured optical phase shift. In…
  openalex D. Pogány, S. Bychikhin, C. Fürböck, Martin Litzenberger 等 2002-11-01 置信度 0.78 MicrosecondSemiconductorMaterials scienceDiodeSemiconductor laser theory
• Negative refraction in semiconductor metamaterials
  openalex Anthony J. Hoffman, Leonid Alekseyev, Scott S. Howard, Kale J. Franz 等 2007-10-14 置信度 0.67 MetamaterialNegative refractionPermittivitySuperlensTransformation optics
• Prospective of Semiconductor Memory Devices: from Memory System to Materials
  The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining. The conventional strategy for meeting such demand, i.e. shrinking of the memory cell size, will no longer be useful at some point in the future, owing to economic reasons…
  openalex Cheol Seong Hwang 2015-05-15 置信度 0.80 Neuromorphic engineeringVon Neumann architectureComputer sciencePoint (geometry)Semiconductor memory
• Reactions between Perfect Dislocations in Semiconductor Devices
  Abstract Semiconductor devices of “thyristor structure” are studied by the X‐ray topographic method. Typical perfect dislocations are generated in n‐p junction and glide in neighbouring {111} slip planes close to the crystal surface, thus contributing to the r…
  openalex M. Sauvage, David S. Simon 1969-01-01 置信度 0.78 SemiconductorMaterials scienceDislocationCondensed matter physicsSilicon
• Hot-carrier light emission from silicon metal-oxide-semiconductor devices
  Light emitted from energetic electrons and holes near the drain region of Si field-effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75…
  openalex Markus Herzog, F. Koch 1988-12-26 置信度 0.78 OptoelectronicsSiliconMaterials scienceImpact ionizationElectron
• RF and microwave semiconductor device handbook
  openalex 2003-05-01 置信度 0.67 MicrowaveSemiconductorOptoelectronicsMaterials scienceEngineering physics
• Transient thermal study of semiconductor devices
  An analytical, three-dimensional transient temperature solution of a two-layer semi-infinite plate structure with embedded hear sources is derived. The thickness of the second layer is assumed to extend to infinity. By incorporating the method of images, this …
  openalex Yong Min, Arthur Palisoc, C.C. Lee 1990-01-01 置信度 0.78 Transient (computer programming)Layer (electronics)ThermalSemiconductorSoftware
• Reliability issues in III–V compound semiconductor devices: optical devices and GaAs-based HBTs
  openalex Osamu Ueda 1999-12-01 置信度 0.67 Materials scienceOptoelectronicsHeterojunctionSemiconductorDislocation