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• Genesis, From (0,0,0) to Reality- The Computational Ontology of Absolute Change
  Genesis, From (0,0,0) to Reality- The Computational Ontology of Absolute Change Following C1 Through Every Medium — Tracing Computation from the Ground State Driven by Dean Kulik June 2026 Abstract This paper traces the genesis of reality from a single axiom —…
  datacite kulik, dean 2026 置信度 0.72
• Theory and simulation of novel low-power nanotransistors
  Moore's law predicts an exponential growth of the number of transistors on integrated circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it increasingly difficult to maintain their power consumption at an acceptable level. In…
  datacite Prentki, Raphaël 2022 置信度 0.73 Physics
• HoLTZtau v19 Unifier of known sciences .Chained from seed , derived SI base units, constants like the fine-structure α, and cosmological parameters such as Ω_m, Ω_Λ, n_s, H₀, and σ₈ without free parameters or ad-hoc inputs
  version v19 .Analog science measures what computation produces in 3D. Foam describes the computation itself.Author: Mark Jacobson (Gson @gsemark), Stockholm, SwedenDate: 2026-06-26 " DeHoLTZ – Summarised from appended files DBs (main.55, hard,soft) APIs, user …
  datacite Jacobson, Mark 2026 置信度 0.68
• Comparative Performance Analysis P-type GAA FET
  This work presents comparative simulation of p-type channel materials in an identical junctionless gate-all-around (JL-GAA) nanowire field-effect transistor
  datacite SANDIP Majumdar 2026 置信度 0.73 Elemental semiconductors
• Comparative Performance Analysis P-type GAA FET
  This work presents comparative simulation of p-type channel materials in an identical junctionless gate-all-around (JL-GAA) nanowire field-effect transistor
  datacite SANDIP Majumdar 2026 置信度 0.73 Elemental semiconductors
• Fabricating atomically abrupt, surface-gated devices in silicon
  This thesis demonstrates the successful development of surface-gated, highly phosphorus doped single electron transistors, defined by scanning probe lithography and low-temperature silicon molecular beam epitaxy. In order to fabricate these devices, a custom u…
  datacite Wilkinson-Thompson, Daniel 2011 置信度 0.75 Ultra-high vacuumSingle electron transitorLow temperature oxideScanning tunnelling microscopePlasma-assisted oxidation
• Singlet-Triplet Readout for Donor-Based Qubits in Silicon
  In the pursuit of realising a full-scale universal quantum computer, the phosphorus donor in silicon platform provides a simple, low magnetic and low charge noise environment. In this thesis we consider the singlet-triplet (T0) qubit encoding in this system wh…
  datacite Geng, Helen 2023 置信度 0.75 Quantum Computingnanotechnologysilicon
• Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques
  In this work, 3D full-domain 3 nm gate-all-around field-effect transistor (GAA-FET) static random access memories (SRAMs) with various substrate isolation techniques are simulated using Technology Computer-Aided Design (TCAD). In addition to the traditional bo…
  datacite Lu, Albert, Verbeke, Junipero, Oldiges, Phil, Arghavani, Reza 等 2026 置信度 0.76 Emerging Technologies (cs.ET)FOS: Computer and information sciences
• Electronics and Circuit Theory: Constitutional Architecture and Structural Realization of Circuits from Kirchhoff to Integrated Circuits
  Electrical circuits are the most direct engineering expression of constraint networks — nodes are Type I constraint vertices (Being = Matter, with meltdown barrier E_b^melt and maintenance power Ė_main), wires are Type II constraint edges (free-state energy ch…
  datacite Yang, Hongpu 2026 置信度 0.79 constraint network electronicsconstitutional circuit theoryCapture-Controlled transistordual-channel RLC dampingdegeneration corridor five-stage chip aging
• Electronics and Circuit Theory: Constitutional Architecture and Structural Realization of Circuits from Kirchhoff to Integrated Circuits
  Electrical circuits are the most direct engineering expression of constraint networks — nodes are Type I constraint vertices (Being = Matter, with meltdown barrier E_b^melt and maintenance power Ė_main), wires are Type II constraint edges (free-state energy ch…
  datacite Yang, Hongpu 2026 置信度 0.79 constraint network electronicsconstitutional circuit theoryCapture-Controlled transistordual-channel RLC dampingdegeneration corridor five-stage chip aging
• CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
  This study addresses the complementary metal-oxide-semiconductor-compatible fabrication of vertically stacked Si/SiO2/Si nanopillars (NPs) with embedded Si nanodots (NDs) as key functional elements of a quantum-dot-based, gate-all-around single-electron transi…
  datacite Borany, Johannes von, Engelmann, Hans-Jürgen, Heinig, Karl-Heinz, Amat, Esteve 等 2023 置信度 0.76 CMOSSingle-electron transistorNanostructure fabricationNanopillarsSilicon nanodot
• TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing
  Thermal oxidation is a key step for the fabrication of vertical gate-all-around nanowire field-effect transistors (GAA-NW-FETs). It is used after the etching of nanopillars from the silicon substrate to further thin the nanowire diameter, remove the etching da…
  datacite Rossi, Chiara, Müller, Jonas, Pichler, Peter, Piotr Michałowski, Paweł 等 2024 置信度 0.77 TCAD process simulationsSelf-limiting thermal oxidationBoron segregationSilicon nanowiresGate-all-around nanowire field-effect transistor (GAA-NW-FET)
• From RTL to GDSII: How Custom Silicon Is Designed
  Episode summary: What does it actually mean to design a custom chip? This episode breaks down the full spectrum of silicon — from off-the-shelf CPUs and GPUs to full-custom ASICs where every transistor is placed by hand. We cover the design flow from RTL to GD…
  datacite Rosehill, Daniel, Gemini 3.1 (Flash), Chatterbox TTS 2026 置信度 0.79 podcastai-generatedmy weird promptshardware-engineeringsemiconductors
• The Universe as Computation and Hardware: The Nexus Recursive Framework
  The Universe as Computation and Hardware: The Nexus Recursive Framework Driven By Dean A. Kulik June 2026 Executive summary The user’s Nexus primitives map surprisingly well onto established computational and hardware primitives when interpreted as constraint …
  datacite kulik, dean 2026 置信度 0.72
• The Universe as Computation and Hardware: The Nexus Recursive Framework
  The Universe as Computation and Hardware: The Nexus Recursive Framework Driven By Dean A. Kulik June 2026 Executive summary The user’s Nexus primitives map surprisingly well onto established computational and hardware primitives when interpreted as constraint …
  datacite kulik, dean 2026 置信度 0.72
• Jacobian Determinant Matrix of the 1155-Dimensional Tensorial Mechanics of the Hamzah Equation
  بدون هیچ‌گونه تغییر، حذف، تلخیص یا ساده‌سازی در ساختار مفاهیم، کل پیکربندی ریاضیاتی، تانسوری و مانیفست پدیدارشناسی مربوط به «اَبَرماتریس ژاکوبی کلان» ($\mathbb{J}_{\text{Master}}$) در تراز لاگرانژی $L_{1155}$ به عنوان مرجع استخراج تمام ۱۰۰ مورد ساختاری، فرکانس…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.64
• Material synthesis, device fabrication and evaluation of hysteresis response of two-dimensional material-based devices
  Diese Dissertation untersucht die Synthese von Molybdändisulfid (MoS₂) und dessen Integration in Feldeffekttransistoren (FETs) mit besonderem Schwerpunkt auf die Auswirkungen der Wachstumsparameter von MoS₂-Schichten auf die Eigenschaften und das Hystereseverh…
  datacite Mathew, Sobin 2026 置信度 0.79 MolybdändisulfidSchichtwachstumCVD-VerfahrenFeldeffekttransistorGraphen
• P = NP Solution
  To achieve the comprehensive realisation of the computational platform and to establish the definitive closure of the mathematical boundary of the $P = NP$ problem, we dissect the formulation of the Hamzeh Comprehensive and Deterministic Hyper-Lagrangian ($\ma…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.72
• P = NP Solution
  To achieve the comprehensive realisation of the computational platform and to establish the definitive closure of the mathematical boundary of the $P = NP$ problem, we dissect the formulation of the Hamzeh Comprehensive and Deterministic Hyper-Lagrangian ($\ma…
  datacite HAMZAH, SEYED RASOUL 2026 置信度 0.72
• The Handshake Theorem: Aperture Addressing, the SHA† Query, and the Prosodic Channel Acquisition Problem
  The Handshake Theorem: Aperture Addressing, the SHA† Query, and the Prosodic Channel Acquisition Problem Driven By Dean A. Kulik May 2026 Abstract A program does not query itself. It sits until addressed. This paper formalizes what it means to query a determin…
  datacite Kulik, Dean 2026 置信度 0.68
• The Handshake Theorem: Aperture Addressing, the SHA† Query, and the Prosodic Channel Acquisition Problem
  The Handshake Theorem: Aperture Addressing, the SHA† Query, and the Prosodic Channel Acquisition Problem Driven By Dean A. Kulik May 2026 Abstract A program does not query itself. It sits until addressed. This paper formalizes what it means to query a determin…
  datacite Kulik, Dean 2026 置信度 0.68
• Polarity Control at Runtime : from Circuit Concept to Device Fabrication
  Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to overco…
  datacite De Marchi, Michele 2015 置信度 0.75 nanotechnologyemerging technologiessilicon nanowiresSchottky barrierlogic design
• VLSI Design Challenges in Nanotechnology and Future Transistor
  The rapid scaling of semiconductor devices has pushed CMOS technology close to its physical limits. As the feature sizes approach the nanometer regime, conventional planar MOSFETs face severe challenges such as excessive leakage current, pronounced short-chann…
  datacite Muhammad Zamin, Ali Khan, Faigha, Karim, Hafiza Amna, Owais Ansari, Sidra, Noor 等 2026 置信度 0.77 computer scienceengineeringmaterials sciencenanotechnologysoftware deployment
• Stone Tokenomics of an electron
  Tokenomics This is a blueprint for a new kind of computer chip that works more like a physical machine and less like a digital one. It moves away from the "guesswork" of modern AI and replaces it with the "certainty" of physics. Imagine the difference between …
  datacite Stone, Travis Raymond-Charlie 2026 置信度 0.72
• Stone Tokenomics of an electron
  Tokenomics This is a blueprint for a new kind of computer chip that works more like a physical machine and less like a digital one. It moves away from the "guesswork" of modern AI and replaces it with the "certainty" of physics. Imagine the difference between …
  datacite Stone, Travis Raymond-Charlie 2026 置信度 0.72
• Mobility Degradation and Total Series Resistance of Cylindrical Gate-All- Around Silicon Nanowire Field-Effect Transistor
  datacite Singh, Lalit, Chandra, Mahesh, B P Tyagi 2012 置信度 0.59
• Comprehensive Reliability Analysis on Advanced CMOS Technology Featuring 2nm Nanosheet FET
  In this study, a comprehensive reliability assessment has been presented for the state-of-the-art 2nm technology featuring Gate-all-around nanosheet FET. TSMC N2 technology not only deliver a better transistor performance but also achieve extremely reliability…
  datacite IEEE International Symposium on Reliability Physics 2026, Chen, Pin-Shiang, Chen, Eliot, Chiu, Josh 等 2026 置信度 0.76 Reliability Physics
• Enhanced Electrostatic Control and Biosensing in a No Junction Gate all Around Hetero Dielectric Tunnel Field Effect Transistor (NJGAA-HTFET): A Nanoscale Study Through Analytical Modeling and TCAD Simulation
  In the modern era of miniaturization, Tunnel Field Effect Transistor (TFET) is considered to be a dominant device for low-power applications due to its primary switching mechanism. The concept of TFETs is that quantum tunnelling across a barrier is regulated, …
  datacite Palanichamy, Vimala, Augustine, Sharon Geege, Sarasam, Arun Samuel Thankamony, Dhanaselvam, Suveetha 等 2026 置信度 0.79 TFETNanometerNo junctionGate all aroundTCAD
• Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor
  We theoretically investigated the readout process of a spin--qubit structure based on a gate-all-around (GAA) transistor. Our study focuses on a logical qubit composed of two physical qubits. Different spin configurations result in different charge distributio…
  datacite Tanamoto, Tetsufumi, Ono, Keiji 2025 置信度 0.77 Mesoscale and Nanoscale Physics (cond-mat.mes-hall)Quantum Physics (quant-ph)FOS: Physical sciencesFOS: Physical sciences
• The Dual-Wave Spiral: Shape as Computation, the Universal Component Map, and the SHA-256 Die as a Resolute Local Rendering
  The Dual-Wave Spiral: Shape as Computation, the Universal Component Map, and the SHA-256 Die as a Resolute Local Rendering Driven by Dean Kulik April 2026 Spiral synthesis: reality is treated as a self-governing computational substrate; the die is treated as a…
  datacite Kulik, Dean 2026 置信度 0.72
• The Dual-Wave Spiral: Shape as Computation, the Universal Component Map, and the SHA-256 Die as a Resolute Local Rendering
  The Dual-Wave Spiral: Shape as Computation, the Universal Component Map, and the SHA-256 Die as a Resolute Local Rendering Driven by Dean Kulik April 2026 Spiral synthesis: reality is treated as a self-governing computational substrate; the die is treated as a…
  datacite Kulik, Dean 2026 置信度 0.72
• Temperature Impact on The ION/IOFF Ratio of GateAll Around Nanowire TFET
  This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working tempera…
  datacite Natheer, Firas 2026 置信度 0.76 Electrical circuits and systems
• Electrical characterization of si nanowire GAA-TFET based ondimensions downscaling
  This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). Th…
  datacite Natheer, Firas 2023 置信度 0.73 Electrical circuits and systems
• The Computational Substrate of Reality: A Comprehensive Meta-Analysis of the Nexus Framework, Sarrus Isomorphism, and Cryptographic Inversion
  The Computational Substrate of Reality: A Comprehensive Meta-Analysis of the Nexus Framework, Sarrus Isomorphism, and Cryptographic Inversion Introduction: The Crisis of Distinction and the Ontological Inversion Contemporary theoretical physics, advanced compu…
  datacite Kulik, Dean 2026 置信度 0.72
• The Computational Substrate of Reality: A Comprehensive Meta-Analysis of the Nexus Framework, Sarrus Isomorphism, and Cryptographic Inversion
  The Computational Substrate of Reality: A Comprehensive Meta-Analysis of the Nexus Framework, Sarrus Isomorphism, and Cryptographic Inversion Introduction: The Crisis of Distinction and the Ontological Inversion Contemporary theoretical physics, advanced compu…
  datacite Kulik, Dean 2026 置信度 0.72
• Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors
  Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes. However, the drain-current…
  datacite Mendez, Juan P., Cariker, Coleman, Titze, Michael, Belianinov, Alex A. 等 2026 置信度 0.77 Other Condensed Matter (cond-mat.other)FOS: Physical sciencesFOS: Physical sciences
• Temperature Impact on The ION/IOFF Ratio of GateAll Around Nanowire TFET
  This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working tempera…
  datacite Natheer, Firas 2026 置信度 0.76 Electrical circuits and systems
• Electrolyte-Gated Transistors for Neuromorphic Signal Processing and Biosensing
  This thesis describes the design, fabrication and testing of neuromorphic electronic devices designed to detect target biomolecules in solution. Within these devices, the critical sensing layer was formed from a polymer treated using a plasma processing method…
  datacite Sylvander, Luke 2025 置信度 0.76 Electronic and magnetic properties of condensed matter; superconductivity
• INTEGRATED VACUUM TRANSISTORS AND FIELD EMITTER ARRAYS
  The arrival of Si transistors and integrated circuit technology more than half a century ago made vacuum electronic technology almost extinct. Today, there are only a few niche applications for vacuum electronics. The main issues with this technology are its h…
  datacite Ghotbi, Shabnam 2023 置信度 0.73 Electrical engineering not elsewhere classified
• INTEGRATED VACUUM TRANSISTORS AND FIELD EMITTER ARRAYS
  The arrival of Si transistors and integrated circuit technology more than half a century ago made vacuum electronic technology almost extinct. Today, there are only a few niche applications for vacuum electronics. The main issues with this technology are its h…
  datacite Ghotbi, Shabnam 2023 置信度 0.73 Electrical engineering not elsewhere classified
• TRANSPORT PROPERTIES OF LOW DIMENSIONAL MATERIALS AND THEIR APPLICATIONS TOWARD HIGH PERFORMANCE FETS
  The miniaturization of a MOSFET is the constant driving force in semiconductor technology over the decades. This scaling enables the realization of the ever complex and functional integration on a single chip where over tens of billions of transistors densely …
  datacite Zhou, Ruiping 2021 置信度 0.73 Electrical engineering not elsewhere classified
• TRANSPORT PROPERTIES OF LOW DIMENSIONAL MATERIALS AND THEIR APPLICATIONS TOWARD HIGH PERFORMANCE FETS
  The miniaturization of a MOSFET is the constant driving force in semiconductor technology over the decades. This scaling enables the realization of the ever complex and functional integration on a single chip where over tens of billions of transistors densely …
  datacite Zhou, Ruiping 2021 置信度 0.73 Electrical engineering not elsewhere classified
• Information Density Theory.
  Subject: Detailed Introduction to Information Density (ID) and the Hamzah Lagrangian Extraction Computational Threshold: Postdoctoral Level (Information Physics) 1. Epistemological Analysis and Critique (The Hardware-Matter Fallacy) In Level 161 physics (Gener…
  datacite SEYED RASOUL, HAMZAH 2026 置信度 0.72
• Information Density Theory.
  Subject: Detailed Introduction to Information Density (ID) and the Hamzah Lagrangian Extraction Computational Threshold: Postdoctoral Level (Information Physics) 1. Epistemological Analysis and Critique (The Hardware-Matter Fallacy) In Level 161 physics (Gener…
  datacite SEYED RASOUL, HAMZAH 2026 置信度 0.72
• Nanotechnology in Electronics: Advancement in Nanochips, Neural Interface and Quantum Process
  Nanotechnology has become a key factor in modern electronics. It allows for the creation of highly efficient, compact semiconductor devices. The shift from microelectronics to nanoelectronics has increased transistor density, processing speed, and energy effic…
  datacite K, Deepan, Dr. M. Rathi 2026 置信度 0.77 materials scienceoptoelectronicsopticsnanotechnologyphysics.app-ph
• 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
  To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-l…
  datacite Karapetyan, Shake, Zeltmann, Steven E., Wilk, Glen, Chen, Ta-Kun 等 2025 置信度 0.77 Materials Science (cond-mat.mtrl-sci)Applied Physics (physics.app-ph)FOS: Physical sciencesFOS: Physical sciences
• THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down
  THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down A Complete Technical Specification of Reality and Its Human Approximations Driven by Dean Kulik February 2026 Abstract This paper argues — and proves — one thing: e…
  datacite Kulik, Dean 2026 置信度 0.72
• THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down
  THE UNIVERSE AS THE FIRST COMPUTER: Computation as Constraint, Scoped Versions All the Way Down A Complete Technical Specification of Reality and Its Human Approximations Driven by Dean Kulik February 2026 Abstract This paper argues — and proves — one thing: e…
  datacite Kulik, Dean 2026 置信度 0.72
• 3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation.
  3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation. ..............................................................................................................................................…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.72
• 3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation.
  3I/ATLAS and the Resolution of All Its Mysteries through the 165-Dimensional Tensor Mechanics of the Hamzah Equation. ..............................................................................................................................................…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.72
• Earth is not a Lifeless Mass of Rock, But an Intelligent Bio-Quantum Chip.
  اکنون «ابر-لاگرانژیِ واحدِ سیاره‌ای» (The Unified Planetary Source-Code Lagrangian) را ارائه می‌دهم. این معادله، «مادرِ تمامِ محاسبات» برای ۱۰۰ پارادوکس، آتشفشان‌ها، زلزله‌ها، پدیده‌های جوی و پایداری حیات است که در این گفتگو اثبات کردیم. این لاگرانژی نشان می‌د…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.72
• Earth is not a Lifeless Mass of Rock, But an Intelligent Bio-Quantum Chip.
  اکنون «ابر-لاگرانژیِ واحدِ سیاره‌ای» (The Unified Planetary Source-Code Lagrangian) را ارائه می‌دهم. این معادله، «مادرِ تمامِ محاسبات» برای ۱۰۰ پارادوکس، آتشفشان‌ها، زلزله‌ها، پدیده‌های جوی و پایداری حیات است که در این گفتگو اثبات کردیم. این لاگرانژی نشان می‌د…
  datacite JALALI, SEYED RASOUL 2026 置信度 0.72
• Advanced FET Biosensors: Design, Materials, and Biomedical Applications
  preprints 2025 置信度 0.70
• Investigation of Short Channel Effects in Al0.30Ga0.60As Channel Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications
  preprints 2025 置信度 0.70
• Digital OTAs: Conventional Designs Versus Emerging Concept
  preprints 2026 置信度 0.63
• Nanoscale geometrical patterning for junctionless thermoelectrics
  preprints 2026 置信度 0.63
• 2D PbS Quantum Dot Superlattices with Unprecedented Area Coverage and Homogeneity via Langmuir-Schaefer Deposition
  preprints 2025 置信度 0.63
• Heavy fermions, mass renormalization, and local moments in magic-angle twisted bilayer graphene via planar tunneling spectroscopy
  preprints 2025 置信度 0.63
• Integration of ethologically defined anxiety-related behaviors in the ventral hippocampus
  preprints 2026 置信度 0.67
• Non Functionalized Graphene Ribbons Fet Biosensor Platform: Sars-Cov-2 Detection on Tio2 Gate Dielectric Windows
  preprints 2023 置信度 0.65
• A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect
  preprints 2023 置信度 0.65
• Investigation of Common Source Amplifier Circuit Application Using Gate Stack Based Gate-all-around Charge Plasma Nanowire FET
  Abstract The reported work demonstrates the application of common source amplifier circuit using gate-all-around gate stacked charge plasma nanowire field effect transistor (GAA GS CP NW FET). Primarily, the impact of the gate stacking (GS) technique upon the …
  preprints LEO RAJ SOLAY, PRADEEP KUMAR, S INTEKHAB AMIN, SUNNY ANAND 2022 置信度 0.84 materials sciencecond-mat.mes-hallcond-mat.mtrl-scioptoelectronicsphysics.app-ph
• A High-Precision Timing Method and Digital Interface for Closed-Loop TMS
  Objective Current transcranial magnetic stimulation (TMS) protocols exhibit high inter-subject variability in treatment outcomes, highlighting the need for personalized, brain-state-dependent closed-loop stimulation protocols. To enable such protocols, we aim …
  preprints 2025 置信度 0.86 computer sciencebrain-computer interfacecomputer and information sciencesartificial intelligenceelectroencephalography
• An open-sourced 3D printable microscope with a large CNC stage
  preprints 2025 置信度 0.63
• A Biomass-Based Electret Filter with Persistent Electrostatic Charges for Eco-Friendly and Greener Face Mask Material
  preprints 2023 置信度 0.65
• Phonon Scattering Effect on Self-heating in GAAFET Transistor Using the DPL heat conduction model
  preprints 2022 置信度 0.65
• Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctioless MOSFET For Low Power Applications
  preprints 2021 置信度 0.68
• The Effects of Source Doping Concentration and Doping Gradient on the ON-State Current of Si Nanowire TFETs
  preprints 2022 置信度 0.61
• Peculiar Transient Behaviors of Organic Electrochemical Transistors Governed by Ion Injection Directionality
  preprints 2023 置信度 0.65
• Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor
  Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using…
  preprints Rishu Chaujar, Mekonnen Getnet Yirak 2021 置信度 0.84 materials sciencecond-mat.mes-halloptoelectronicsphysics.app-phquantum dot
• Graphene Field Effect Biosensor for Concurrent and Specific Detection of SARS-CoV-2 and Influenza
  preprints 2022 置信度 0.61
• Automated Measurement and Analysis of Sidewall Roughness (SWR) Using 3D-AFM
  preprints 2021 置信度 0.65
• Multimodal system for recording individual-level behaviors in songbird groups
  In longitudinal observations of animal groups, the goal is to identify individuals and to reliably detect their interactive behaviors, including their vocalizations. However, to reliably extract individual vocalizations from their mixtures and other environmen…
  preprints 2023 置信度 0.84 computer and information sciencescomputer scienceelectrical engineering, electronic engineering, information engineeringphysical sciencesbrain-computer interface
• An all-solid-state heterojunction oxide transistor for the rapid detection of biomolecules and SARS-CoV-2 spike S1 protein
  preprints 2021 置信度 0.68
• Label-Free and Portable Field-Effect Sensor for Monitoring Rt-Lamp Products to Detect Sars-Cov-2 in Wastewater
  preprints 2022 置信度 0.61
• Feasibility of a silicon thin film transistor-based aptamer sensor for COVID-19 detection
  preprints 2020 置信度 0.68
• Source-All-Around Tunnel Field-Effect Transistor (SAA-TFET): Proposal and Design
  In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provi…
  preprints Ahmed Shaker, Ahmed Maged, Ali Elshorbagy, Abdallh AbouElainain 等 2019 置信度 0.84 grapheneoptoelectronicselectrical engineering, electronic engineering, information engineeringalgorithmmaterials science
• Control of antibody orientation on graphene using porphyrin linker molecules for high-performance graphene-based immuno-biosensors
  preprints 2023 置信度 0.65
• SARS-CoV-2 multi-variant graphene biosensor based on engineered dimeric ACE2 receptor
  preprints 2021 置信度 0.61
• Multimodal system for recording individual-level behaviors in songbird groups
  preprints 2022 置信度 0.61
• MicroFPGA: an affordable FPGA platform for microscope control
  preprints 2022 置信度 0.61
• An analytical model for P+ pocket SiC gate all around Junctionless field effect transistor with impact of high temperature
  crossref Nagalakshmi Yarlagadda, Yogesh Kumar Verma 2023-07-27T20:24:49Z 置信度 0.64
• Parameter Variations of a Short Channel Gaas Junctionless-Gate-All-Around Field-Effect Transistor Including Quantum Mechanical Effects
  This paper presents a numerical simulation to examine the performance of GaAs Junctionless-Gate-All-Around (JGAA) Field-Effect Transistor (FET) under quantum effect. The behaviours of quantum are studied based on the Density-Gradient Model in a short channel d…
  crossref Faidzal Rasol, Fatimah Khairiah Abd. Hamid, Zaharah Johari, Mastura Syafinaz Zainal Abidin 等 2022-03-21T23:13:37Z 置信度 0.79 cond-mat.mes-hallsemiconductoroptoelectronicsquantum dotquant-ph
• Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications
  In this paper, design and parameter optimization for the performance analysis of a Gate-All-Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) has been carried out based on the various quantum ballistic simulation models. The simulation results show a…
  crossref Rajiv Ranjan Thakur, Nidhi Chaturvedi 2021-07-06T03:49:49Z 置信度 0.79 cond-mat.mes-hallmaterials sciencebenchmarkastrophysicssemiconductor
• Impact of Zig-Zag Layer on MoS₂ based Nanoribbon Gate-all-Around Field Effect Transistor
  crossref Anand M. Bhujade, Rajesh C. Junghare, Ganesh C. Patil 2020-03-13T02:59:32Z 置信度 0.64
• A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
  crossref Reza Hosseini, Neda Teimourzadeh, Morteza Fathipour 2013-08-21T12:56:23Z 置信度 0.63
• Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel width
  We investigate the electrical characteristics of a double-gate-all-around (DGAA) transistor with an asymmetric channel width using three-dimensional device simulation. The DGAA structure creates a silicon nanotube field-effect transistor (NTFET) with a core-sh…
  crossref Myunghwan Ryu, Franklin Bien, Youngmin Kim 2016-01-22T20:10:53Z 置信度 0.78 materials sciencecond-mat.mtrl-scicond-mat.mes-hallsemiconductoroptoelectronics
• Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance
  crossref Xiaoqiao Dong, Yuancheng Yang, Gong Chen, Shuang Sun 等 2018-12-13T00:48:43Z 置信度 0.63
• Performance analysis of surrounding cylindrical gate all around nanowire transistor for biomedical application
  crossref Amit Agarwal, Prashanta Chandra Pradhan, Bibhu Prasad Swain 2021-01-29T07:48:57Z 置信度 0.64
• Junctionless Silicon-Nanowire Gate-All-Around Tunnel Field Effect Transistor
  crossref M. W. Akram, Bahniman Ghosh 2014-07-04T22:27:49Z 置信度 0.63
• Subthreshold Drain Current Model of Cylindrical Gate All‐Around Junctionless Transistor With Three Different Gate Materials
  ABSTRACT A novel subthreshold drain current model has been developed for a cylindrical gate all‐around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectivel…
  crossref S. Manikandan, P. Suveetha Dhanaselvam, M. Karthigai Pandian 2024-10-28T05:35:26Z 置信度 0.82 control theoryphysical sciencesbenchmarkmaterials sciencephysics.chem-ph
• NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
  crossref A. Martinez, M. Aldegunde, A.R. Brown, S. Roy 等 2011-12-01T20:33:23Z 置信度 0.63
• Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor
  crossref Minkyu Je, Sangyeon Han, Ilgweon Kim, Hyungcheol Shin 2017-04-04T13:45:17Z 置信度 0.63
• Performance Evaluation of a Gate All Around Junctionless Field Effect Transistor Based Biosensor with a Nano-Cavity Region
  crossref Mahsab Al Rahman, Ehteshum Hossain, Farhana Siddiqui 2021-05-03T18:38:17Z 置信度 0.64
• Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
  The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven…
  crossref Pushpapraj Singh, Woo-Tae Park, Jianmin Miao, Lichun Shao 等 2012-02-07T23:53:30Z 置信度 0.78 cond-mat.mtrl-sciphysical sciencesclimatologyopticsinstrumentation and methods for astrophysics
• More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring
  crossref Md. Hasan Raza Ansari, Seongjae Cho, Byung-Gook Park 2020-10-07T21:02:19Z 置信度 0.64
• Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB
  crossref R Helen Ramya Bharathi, P. Karthikeyan 2018-02-07T20:45:47Z 置信度 0.63
• Characteristics and sensitivity of p-type junctionless gate-all-around nanowire transistor
  crossref Ming-Hung Han, Yi-Ruei Jhan, Jia-Jiun Wu, Hung-Bin Chen 等 2012-09-07T15:57:32Z 置信度 0.63
• Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
  In this paper, we investigate the impact of different phonon scattering mechanisms on the performance of a small silicon gate-all-around nanowire field effect transistor. The Non-equilibrium Green's function (NEGF) framework in the effective mass approximation…
  crossref M. Aldegunde, A. Martinez, J. R. Barker 2013-01-04T12:26:26Z 置信度 0.78 cond-mat.mtrl-sciphysics.app-phastro-ph.cotopological insulatorcond-mat.mes-hall
• Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory
  crossref Po-Chun Huang, Lu-An Chen, Jeng-Tzong Sheu 2010-02-12T16:25:35Z 置信度 0.61